A through-silicon via based three-dimensional electromagnetic bandgap structure and array system

Abstract

The application relates to the technical field of semiconductor structures, in particular to a three-dimensional electromagnetic bandgap structure based on a through silicon via and an array system, which comprises a dielectric substrate, upper and lower surface metal layers and a via array; the metal layers are provided with central interdigital electrodes for generating planar distributed capacitances and edge comb electrodes for realizing electromagnetic coupling, and the vias connect the upper and lower interdigital electrodes to form a three-dimensional resonant loop; the array system realizes non-contact staggered engagement of the edge comb electrodes of adjacent units, forms distributed field interaction in the staggered area and excites a coupled resonant mode; through superposition of an intrinsic mode and a coupled mode in a frequency domain, a continuous wideband noise suppression stopband is formed, and the electromagnetic compatibility of a three-dimensional integrated circuit is significantly improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor structure technology, and in particular to a three-dimensional electromagnetic bandgap structure and array system based on through-silicon vias (TSVs). Background Technology

[0002] As semiconductor technology entered the post-Moore's Law era, 3D integrated circuits and system-in-package (SoC) technologies achieved vertical interconnection through through-silicon vias (TSVs), greatly improving system integration and functional density. However, this high-density integration also presents severe signal and power integrity challenges to power distribution networks. In particular, with the continuous increase in operating frequency, the propagation and coupling of synchronous switching noise within the 3D packaging system has become increasingly serious, becoming a key factor restricting the stability of high-performance chip systems.

[0003] To suppress the propagation of synchronous switching noise, electromagnetic bandgap (EBG) structures, as periodic structures capable of generating electromagnetic stopbands, are widely used. By loading an EBG structure between the power layer and the ground layer, the propagation of electromagnetic waves within a specific frequency range can be effectively blocked, thereby isolating noise interference. Due to its compatibility with 3D packaging processes, 3D EBG structures based on through-silicon vias have gradually become an important technical means to solve the noise suppression problem of 3D integrated circuits.

[0004] However, existing three-dimensional electromagnetic bandgap structures still have significant limitations in practical applications. Specifically, the main problem lies in their relatively narrow stopband bandwidth for noise suppression. Existing EBG structures often only produce a deep suppression effect near a specific center frequency, making it difficult to cover the wideband noise spectrum generated by modern high-speed digital systems. When the noise frequency shifts or is distributed over a wide frequency band, existing three-dimensional EBG structures often cannot provide continuous and stable suppression capabilities, making it difficult to meet the stringent requirements of high-performance three-dimensional integrated systems for wideband electromagnetic compatibility. Summary of the Invention

[0005] The main objective of this invention is to provide a three-dimensional electromagnetic bandgap structure based on through-silicon vias (TSVs), which aims to solve the problem that existing electromagnetic bandgap structures are unable to cover the wideband noise spectrum generated by modern high-speed digital systems.

[0006] To achieve the above objectives, the present invention provides a three-dimensional electromagnetic bandgap structure based on through-silicon vias (TSVs). The three-dimensional electromagnetic bandgap structure includes: a dielectric substrate, a first metal layer and a second metal layer respectively disposed on the upper and lower surfaces of the dielectric substrate, and a through-hole array penetrating the dielectric substrate and used to connect the first metal layer and the second metal layer.

[0007] The first metal layer and the second metal layer each include a central resonant region and an edge coupling region surrounding the central resonant region. The central resonant region is provided with an interdigitated electrode structure, which is used to generate planar distributed capacitance. The edge coupling region is provided with a comb-shaped electrode structure, which is used to realize electromagnetic coupling. One end of the via array is connected to the interdigitated electrode structure of the first metal layer, and the other end is connected to the interdigitated electrode structure of the second metal layer to form a three-dimensional resonant circuit.

[0008] Optionally, the projections of the interdigitated electrode structure and the comb-shaped electrode structure of the first metal layer and the second metal layer onto the dielectric substrate are mirror-symmetrical or completely overlapped, and the interdigitated electrode structure and the comb-shaped electrode structure form a parallel capacitor network through the via array.

[0009] Optionally, the interdigitated electrode structure includes multiple metal segments arranged in an interlaced manner; the linewidth of the metal segments is equal to the spacing between adjacent metal segments.

[0010] Optionally, the vias in the via array are located at the root connection of the metal segments within the interdigital electrode structure to vertically connect the first metal layer and the second metal layer, so that the three-dimensional electromagnetic bandgap structure generates parallel resonant impedance characteristics within a preset frequency band.

[0011] Optionally, the comb-shaped electrode structure includes a plurality of metal teeth extending outward from the central resonant region; the metal teeth are periodically arranged along the outer contour of the three-dimensional electromagnetic bandgap structure.

[0012] Optionally, the material of the dielectric substrate includes silicon; the filling material inside the first metal layer, the second metal layer, and the via array is copper; the first metal layer and the second metal layer are located within the silicon dioxide dielectric layer on the surface of the dielectric substrate.

[0013] To achieve the above objectives, the present invention also provides a three-dimensional electromagnetic bandgap array system, which includes several three-dimensional electromagnetic bandgap structures; the several three-dimensional electromagnetic bandgap structures are arranged in a periodic array on a plane; and adjacent three-dimensional electromagnetic bandgap structure units are connected by non-contact interdigital electromagnetic coupling through comb-shaped electrode structures in their respective edge coupling regions.

[0014] Optionally, two adjacent comb-shaped electrode structures with three-dimensional electromagnetic bandgap structures interlock with each other to form a distributed electric and magnetic field interaction region in the interlocking region, so as to generate coupled resonant modes.

[0015] Optionally, the three-dimensional electromagnetic bandgap array system is used to generate a superposition of multiple resonant modes, the multiple resonant modes including:

[0016] Intrinsic resonant modes formed by interdigitated electrodes and through-silicon vias within a single three-dimensional electromagnetic bandgap structure;

[0017] And the coupled resonant modes formed by the interaction between adjacent units through the comb-shaped electrode structure;

[0018] The intrinsic resonant mode and the coupled resonant mode are superimposed in the frequency domain to form a continuous wideband noise suppression stopband.

[0019] The beneficial effects that this invention can achieve are as follows:

[0020] This invention solves the technical problems of existing three-dimensional electromagnetic bandgap structures, which rely on a single resonance mechanism, resulting in narrow stopband bandwidth, difficulty in covering the wideband noise spectrum of modern high-speed digital systems, and discontinuous suppression capability at frequency shifts. It achieves broadband deep suppression from unit-level local resonance to system-level multimodal synergy.

[0021] The structure of this invention utilizes the tortuous path of interdigitated electrodes at the unit level to enhance edge electric field coupling and improve distributed capacitance density. Combined with the vertical low-impedance channel provided by the TSV array, it constructs a compact three-dimensional LC resonant circuit, establishing a basic noise suppression capability of approximately -48dB. More importantly, at the system level, near-field coupling of comb-shaped electrodes between units excites coupled resonant modes, causing them to superimpose and hybridize with the intrinsic resonant modes within the unit in the frequency domain, effectively filling the stopband gap of a single resonant point. This three-dimensional multi-resonance collaborative mechanism significantly overcomes the defects of steep band-edge transitions in traditional structures, successfully achieving a deep suppression effect of approximately -95dB across the entire 0-20GHz frequency band. Moreover, the stopband response is smooth and without significant fluctuations. Without significantly increasing manufacturing complexity, it achieves a balance between wide bandwidth, high-depth suppression, and compatibility with mainstream processes, significantly improving the anti-interference capability and electromagnetic compatibility performance of high-density three-dimensional integrated circuit power distribution networks. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the three-dimensional electromagnetic bandgap structure in Embodiment 1 of the present invention;

[0023] Figure 2 This is a schematic diagram of the internal structure of the three-dimensional electromagnetic bandgap structure in Embodiment 1 of the present invention;

[0024] Figure 3 This is a schematic diagram of the three-dimensional electromagnetic bandgap system in Embodiment 2 of the present invention;

[0025] Figure 4This is a noise suppression characteristic diagram of the three-dimensional electromagnetic bandgap structure in Embodiment 1 of the present invention;

[0026] Figure 5 This is a noise suppression characteristic diagram of the three-dimensional electromagnetic bandgap system in Embodiment 2 of the present invention.

[0027] Figure label:

[0028] 1-Dielectric substrate, 2-First metal layer, 3-Second metal layer, 4-Interdigital electrode structure, 5-Comb-shaped electrode structure, 6-Metal segment, 7-Metal tooth.

[0029] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0030] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0031] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0032] In this invention, unless otherwise explicitly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0033] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0034] Example 1:

[0035] As attached Figure 1 With appendix Figure 2 As shown, this embodiment provides a three-dimensional electromagnetic bandgap structure based on through-silicon vias. The three-dimensional electromagnetic bandgap structure includes: a dielectric substrate 1, a first metal layer 2 and a second metal layer 3 respectively disposed on the upper and lower surfaces of the dielectric substrate 1, and an array of through-holes penetrating the dielectric substrate 1 and used to connect the first metal layer 2 and the second metal layer 3.

[0036] The first metal layer 2 and the second metal layer 3 each include a central resonant region and an edge coupling region surrounding the central resonant region. The central resonant region is provided with an interdigitated electrode structure 4, which is used to generate planar distributed capacitance. The edge coupling region is provided with a comb-shaped electrode structure 5, which is used to realize electromagnetic coupling. One end of the via array is connected to the interdigitated electrode structure 4 of the first metal layer 2, and the other end is connected to the interdigitated electrode structure 4 of the second metal layer 3 to form a three-dimensional resonant circuit.

[0037] It should be noted that in the traditional existing three-dimensional electromagnetic bandgap structure based on through-silicon vias, the stopband bandwidth for noise suppression cannot cover the wideband noise spectrum generated by modern high-speed digital systems. This structure only achieves suppression near a specific center frequency. When the noise frequency shifts or is distributed over a wider frequency band, the suppression capability becomes discontinuous, resulting in damage to power integrity and signal integrity, which in turn affects the stability of the three-dimensional integrated system.

[0038] Based on the above problems, this embodiment provides a three-dimensional electromagnetic bandgap structure based on through-silicon vias (TSVs) to effectively suppress electromagnetic noise. Specifically, the dielectric substrate 1 of the three-dimensional electromagnetic bandgap structure serves as the basic support for the entire structure. Its material can be selected from common semiconductor substrate materials, and the thickness of the dielectric substrate 1 is adjusted according to the required resonant frequency and structural size. The first metal layer 2 and the second metal layer 3 are deposited or bonded on the upper and lower surfaces of the dielectric substrate 1, and specific patterns are formed by photolithography and etching processes. The through-hole array is formed by drilling holes in the dielectric substrate 1 and filling them with conductive materials (such as conductive adhesive or metal) to establish a vertical electrical connection between the upper and lower metal layers. For example, a series of holes are formed on the dielectric substrate 1 using laser drilling technology, and then a conductive layer is formed on the inner wall of the holes by electroplating, thereby forming through-holes.

[0039] Furthermore, both the first metal layer 2 and the second metal layer 3 are designed to include two main regions: a central resonant region and an edge coupling region surrounding the central resonant region. The central resonant region is typically located in the central part of the structural unit, and its shape can be circular, square, or polygonal, depending on the design requirements. The edge coupling region surrounds the periphery of the central resonant region, and its width and shape can be adjusted according to the coupling strength and space constraints. Inside the central resonant region, an interdigitated electrode structure 4 is provided. This interdigitated electrode structure 4 consists of multiple interlaced metal segments 6, which form an interlaced finger pattern on the plane. When an electrical signal passes through the interdigitated electrode structure 4, an electric field is generated between adjacent metal segments 6, thereby forming a planar distributed capacitance. The size of the capacitance is controlled by adjusting the linewidth, spacing, and interlacing length of the metal segments 6. The interdigitated electrode structure 4 consists of two sets of interlocking comb-shaped electrodes, each set of electrodes connected to a different potential, thereby forming a capacitance between them.

[0040] Meanwhile, inside the edge coupling region, a comb-shaped electrode structure 5 is provided. The comb-shaped electrode structure 5 is usually composed of several metal teeth 7 extending outward from the central resonant region. These metal teeth 7 can be arranged in a non-periodic or random manner along the edge of the structure. The main function of the comb-shaped electrode structure 5 is to realize electromagnetic coupling, that is, to exchange electromagnetic energy with the adjacent three-dimensional electromagnetic bandgap structure unit through its geometry. The comb-shaped electrode structure 5 is a group of parallel metal strips extending outward. The length and spacing of these metal strips can be adjusted to control the coupling strength.

[0041] Thus, one end of the via array is connected to the interdigitated electrode structure 4 of the first metal layer 2, and the other end is connected to the interdigitated electrode structure 4 of the second metal layer 3. This connection allows the interdigitated electrode structures 4 on the first metal layer 2, the interdigitated electrode structures 4 on the second metal layer 3, and the via array penetrating the dielectric substrate 1 to jointly form a three-dimensional resonant circuit. In this circuit, the interdigitated electrode structure 4 provides the capacitive component, while the via array and metal layer traces provide the inductive component, thereby generating resonance at a specific frequency. Each via in the via array can be connected to a metal segment 6 in the interdigitated electrode structure 4 of the first metal layer 2 and to the corresponding metal segment 6 in the interdigitated electrode structure 4 of the second metal layer 3, thereby establishing a capacitor network connection in the vertical direction.

[0042] It should also be noted that, in some preferred embodiments, this embodiment significantly improves power supply noise suppression by etching an interdigitated interactive structure at the center of the metal power plane and adding an interdigitated comb-like interactive structure to the surrounding L-EBG structure. The three-dimensional electromagnetic bandgap structure of this embodiment has three layers: upper and lower metal plane EBG layers (copper) and an intermediate dielectric layer (silicon). In the interdigitated structure, a strong edge-coupled electric field is formed between adjacent parallel finger lines, which greatly increases the equivalent capacitance (C) of the unit structure. When current flows through the interdigitated metal path, it increases the equivalent inductance (L) of the structure, exhibiting excellent noise suppression characteristics. According to the LC resonant frequency formula... Within the same physical space, larger L and C values ​​can significantly reduce the resonant frequency of the structure; this means that the same low-frequency bandgap performance can be achieved with smaller physical dimensions, which is very beneficial for the miniaturization and integration of modern electronic devices.

[0043] This embodiment of the three-dimensional electromagnetic bandgap structure embeds planar EBG units with an interdigitated shape within the vertical interconnect system of the TSV interposer layer. These interdigitated structures form local resonances through alternating metal traces and electromagnetic coupling, thereby generating bandgap characteristics within a specific frequency band. Its core advantage lies in the integrated functionality of vertical interconnection and electromagnetic control: while the TSV performs vertical signal or power transmission, its surrounding metallization layer and dielectric environment also participate in constructing the bandgap response as components of the EBG, effectively suppressing high-frequency noise coupling and synchronous switching noise (SSN) common in three-dimensional integrated systems. By adjusting the geometric parameters of the interdigitated structure, the resonant frequency and stopband width of the EBG structure can be controlled to adapt to electromagnetic compatibility (EMC) requirements in different frequency bands. This structure not only significantly improves power integrity and signal integrity but also enhances the electromagnetic shielding performance of the system without additional layout area, providing an effective on-chip noise control path for high-density, high-performance three-dimensional integrated circuits.

[0044] In the design of the three-dimensional electromagnetic bandgap structure, the core architecture employs a dual-layer planar EBG structure working in conjunction with vertical through-silicon vias (TSVs). The interdigitated electrodes of the lower EBG structure form a high-density electrode array on the silicon substrate surface, while the interdigitated structures etched in the upper EBG structure are symmetrically distributed through a dielectric layer. Precise vertical interconnection is achieved by TSVs penetrating both layers, thus forming a parallel-distributed integrated capacitor network. This fully utilizes the electromagnetic field manipulation capabilities offered by three-dimensional integration: TSVs enhance the vertical coupling strength of the edge electric field, while the planar interdigitated electrodes effectively expand the lateral electrode area, resulting in a significant increase in capacitance density per unit area through the dual-layer stacking. Simultaneously, the aspect ratio parameters of the TSVs and the process alignment accuracy are strictly controlled, ensuring uniform dielectric layer thickness and reliable interlayer interconnection. Ultimately, this enables the three-dimensional EBG structure to possess stable and efficient noise suppression performance over a wide frequency range.

[0045] Finally, to verify the power supply noise suppression performance of the three-dimensional EBG structure designed in this embodiment, the structure was modeled and simulated using HFSS three-dimensional electromagnetic simulation software. The overall dimensions of the three-dimensional EBG structure are 0.304mm × 0.304mm × 0.61mm. Figure 1 As shown, the structure consists of a ground plane, a dielectric layer, and a power layer composed of a basic unit group formed by coupling two basic structures. The dielectric layer is made of silicon with a relative permittivity of 11.9 and a relative permeability of 1. The upper and lower plane EBG layers are made of copper with a relative permittivity of 1, a relative permeability of 0.999991, and a conductivity of 5.8*107s / m.

[0046] It is understood that the three-dimensional EBG structure in this embodiment is built on a square substrate (dielectric substrate 1). Its core feature is a highly symmetrical and precise metal electrode pattern, which is composed of a large electrode with a complex interdigitated shape in the central region and a comb-like array of secondary electrodes surrounding it. The central electrode itself presents an optimized serpentine or fractal layout. Through the extension and interlacing of fine finger-shaped conductors, the edge length of the conductor is greatly increased. Its symmetrical geometry and periodic layout suggest its isotropic properties when dealing with electromagnetic waves of a specific polarization direction.

[0047] It is also understandable that the working principle of the three-dimensional EBG structure in this embodiment is based on the bandgap effect generated by the artificial electromagnetic bandgap structure. The complex interdigitated electrodes in the central region and the surrounding comb-shaped electrodes work together to form a strong distributed capacitance. When alternating current (i.e., power supply noise) attempts to pass through the structure, a strong edge electric field is generated between the edges of these densely interlaced conductors, thereby storing electrical energy, equivalent to a capacitor C connected in parallel between the power supply and ground. At the same time, when the current flows through these unavoidable metal traces of a certain length, parasitic inductance L is generated. This resonant circuit, determined by the inherent LC parameters of the structure itself, will resonate in parallel at a specific frequency point. At this time, the structure presents extremely high impedance to ground, thereby effectively blocking noise signals at that frequency and in the vicinity of the frequency band from passing through, which is equivalent to opening a bandgap in the transmission path.

[0048] like Figure 4 As shown, the structure in this embodiment exhibits a resonant point near 1 GHz and displays flat suppression characteristics in subsequent frequency bands, indicating its particular suitability for suppressing mid-to-high frequency synchronous switching noise (SSN) and power distribution network (PDN) noise commonly found in current high-performance integrated circuits. The overall structure achieves cross-band noise control without significantly increasing layout complexity, providing an effective technical path for the power integrity and signal integrity design of three-dimensional integrated circuits. This structure achieves stable noise suppression below approximately -48 dB over a wide frequency range, demonstrating its excellent broadband noise isolation capability.

[0049] In this embodiment, the interdigitated electrode structure 4 and the comb-shaped electrode structure 5 of the first metal layer 2 and the second metal layer 3 are mirror-symmetrical or completely overlapped on the dielectric substrate 1. The interdigitated electrode structure 4 and the comb-shaped electrode structure 5 form a parallel capacitor network through the through-hole array.

[0050] In this embodiment, to overcome the limitations of traditional two-dimensional planar structures and construct an efficient three-dimensional resonant system, the first metal layer 2 and the second metal layer 3 are not independent planar patterns in physical space, but are arranged in a strictly symmetrical stacking manner. Specifically, when viewed along a direction perpendicular to the dielectric substrate 1, the interdigitated electrode structure 4 and comb-shaped electrode structure 5 of the first metal layer 2 located on the upper surface of the dielectric substrate 1, and their corresponding structures on the lower surface of the second metal layer 3, exhibit a mirror-symmetric or completely overlapping geometric relationship on the projection plane. The core purpose of this design is to construct an integrated three-dimensional resonator through the vertical symmetry of the physical structure, ensuring the continuity of the current path between the upper and lower layers and low impedance characteristics, thereby making the entire structure exhibit a high degree of consistency in electromagnetic field distribution, and maximizing the utilization of the vertical space of the dielectric substrate 1 to achieve the constraint and control of electromagnetic energy.

[0051] Based on this, a via array penetrating the dielectric substrate 1 is used as a key link for vertical interconnection, transforming this geometric symmetry into electrical parallel gain. The via array connects the high-potential interdigitates of the first metal layer 2 with the corresponding high-potential interdigitates of the second metal layer 3, while also connecting the corresponding low-potential portions, thus constructing a parallel capacitor network in electrical principle. This maximizes the edge electric field coupling effect to obtain extremely high distributed capacitance per unit area. In traditional single-layer or asymmetric structures, the electric field is mainly concentrated in the interdigital gaps within the plane. However, in this embodiment, through the symmetrical overlap of the upper and lower layers and the parallel connection of the vias, the planar distributed capacitance generated by the upper interdigital electrode and the planar distributed capacitance generated by the lower interdigital electrode are physically superimposed. This double-layer superposition design utilizes TSV to enhance the vertical coupling strength of the edge electric field, while the planar interdigital electrodes effectively expand the lateral electrode area, thereby significantly improving the equivalent capacitance value of the structure without increasing the additional layout area.

[0052] In this embodiment, the interdigitated electrode structure 4 includes multiple metal segments 6 arranged in an interlaced manner; the line width of the metal segment 6 is equal to the spacing between adjacent metal segments 6.

[0053] It should be noted that, in this embodiment, the interdigitated electrode structure 4 is a fine array composed of multiple interlaced metal segments 6. These metal segments 6 exhibit a comb-like or finger-like extension shape on the plane, and adjacent metal segments 6 are connected to different potentials (or different paths connected to the same potential), thereby forming a tight electromagnetic coupling region. The linewidth of the metal segment 6 and the spacing between adjacent metal segments 6 are set to be strictly equal values. This design is the result of in-depth optimization of the performance of the three-dimensional electromagnetic bandgap structure based on electromagnetic field distribution theory.

[0054] From a microscopic perspective of electromagnetic field distribution, setting the finger width and spacing of the interdigitated structure to be equal is the key to achieving maximum edge electric field coupling efficiency. The capacitance of the interdigitated electrode structure 4 mainly comes from the edge electric field between the edges of the metal segments 6, rather than the traditional parallel plate capacitance effect. When the line width and spacing of the metal segments 6 are equal, the electric field lines generated by the edges of adjacent finger electrodes can be distributed in the most uniform and dense way throughout the interaction area. This geometric uniformity effectively avoids the phenomenon of local electric field concentration or field strength weakening caused by the fingers being too wide or too narrow, so that the electric field energy density per unit area reaches an extreme value, thereby maximizing the interdigital capacitance (C) within a limited physical space.

[0055] In this embodiment, the vias in the via array are located at the root connection of the metal segment 6 within the interdigital electrode structure 4, so as to vertically connect the first metal layer 2 and the second metal layer 3, so that the three-dimensional electromagnetic bandgap structure generates parallel resonant impedance characteristics within a preset frequency band.

[0056] In this embodiment, the specific location of the vias in the via array is precisely positioned at the root connection of the metal segments 6 within the interdigital electrode structure 4, that is, the starting node or confluence area where each finger-shaped metal segment 6 forming the interdigital electrode connects to the main electrode busbar. The TSV needs to be located at a specific key node of the interdigital electrode to ensure the continuity of the current path between the upper and lower layers and the low impedance characteristics. By setting the vias at this specific root position, the transmission path of current from the planar interdigital structure to the vertical vias can be shortened to the maximum extent, thereby effectively avoiding unnecessary parasitic inductance and resistance losses caused by the long-distance detour of current in the plane.

[0057] Based on this structure, these vias located at key nodes vertically penetrate the dielectric substrate 1, physically and electrically connecting the first metal layer 2 and the second metal layer 3, thereby enabling efficient coupling between the planar distributed capacitance generated by the interdigitated electrodes of the upper and lower layers and the inductive component formed by the vias and metal traces. This optimized connection method constructs a three-dimensional LC resonant circuit with a high quality factor (Q value), which is configured to generate significant parallel resonant impedance characteristics within a preset frequency band.

[0058] Specifically, within the preset frequency band, the three-dimensional electromagnetic bandgap structure exhibits extremely high input impedance to power supply noise, thereby effectively cutting off the noise propagation path and suppressing electromagnetic interference. This design not only fully implements the technical concept of using TSV and interdigital structure to construct a three-dimensional resonant system as outlined in the disclosure document, but also significantly improves the noise isolation depth and signal integrity guarantee capability of the structure within the target frequency band through refined control of the connection position.

[0059] In this embodiment, the comb-shaped electrode structure 5 includes a plurality of metal teeth 7 extending outward from the central resonant region; the metal teeth 7 are periodically arranged along the outer contour of the three-dimensional electromagnetic bandgap structure.

[0060] Understandably, the comb-shaped electrode structure 5 set in the edge coupling region is a precision functional array composed of several metal teeth 7 extending outward from the central resonant region. These metal teeth 7, as extensions of electromagnetic energy, exhibit a strictly periodic arrangement along the outer contour of the three-dimensional electromagnetic bandgap structure. This structure is set as a comb-like secondary electrode array surrounding the central region, and its fundamental purpose is to provide physical conditions for the interactive coupling between two adjacent three-dimensional EBG structures.

[0061] Specifically, through this periodic outward extension design, the metal teeth 7 can construct highly regular electromagnetic boundaries at the edge of the unit. This allows the edges of adjacent units to form a precise, non-contact interlacing through these metal teeth 7 when multiple structural units are arranged in an array. This structural layout creates a distributed, efficient electric and magnetic field interaction region between the two signal channels, thereby establishing a controllable electromagnetic coupling mechanism. Unlike the isolated operation of units in traditional designs, the periodically arranged metal teeth 7 enable adjacent units to form a distributed, efficient electromagnetic interaction region through interlaced finger electrodes, causing a strong and controllable interaction between the electromagnetic fields of the two units. This design not only utilizes the symmetry brought by the periodic structure to ensure the stability of signal transmission, but also transforms the ordinary resonant structure into a functional module with excellent filtering characteristics through a strong coupling mechanism, thereby effectively suppressing noise over a wider frequency band.

[0062] In this embodiment, the material of the dielectric substrate 1 includes silicon; the filling material inside the first metal layer 2, the second metal layer 3 and the via array is copper; the first metal layer 2 and the second metal layer 3 are located within the silicon dioxide dielectric layer on the surface of the dielectric substrate 1.

[0063] It is understandable that silicon material is preferred for dielectric substrate 1. High resistivity silicon is selected to reduce losses. Its natural semiconductor properties and mature deep silicon etching process provide a solid physical basis for the manufacturing of high-precision TSV arrays.

[0064] Secondly, regarding the selection of conductive media, copper is uniformly used as the filling material for the first metal layer 2, the second metal layer 3, and the through-hole array penetrating the substrate. This highly conductive metal filling can not only significantly reduce DC resistance, but also effectively reduce the additional losses caused by the high-frequency skin effect. Especially in the TSV process, the introduction of copper ensures that the vertical interconnect channel has extremely low parasitic resistance, thereby maintaining the high quality factor of the three-dimensional resonant circuit.

[0065] Finally, the first metal layer 2 and the second metal layer 3 are not directly exposed on the substrate surface, but are located within the silicon dioxide dielectric layer on the surface of the dielectric substrate 1. As an excellent insulating medium, silicon dioxide not only achieves effective electrical isolation between the metal layer and the silicon substrate, preventing leakage current, but also serves as a supporting medium for metal interconnects, ensuring the physical stability of the interdigitated electrode and comb electrode structure 5. This material combination based on through-silicon via (TSV) technology allows the metal filler, insulating layer, and silicon substrate to naturally form an inductor-capacitor coupling network, exhibiting excellent three-dimensional structural controllability.

[0066] Example 2:

[0067] As attached Figure 3As shown, this embodiment provides a three-dimensional electromagnetic bandgap array system, which includes several three-dimensional electromagnetic bandgap structures; the several three-dimensional electromagnetic bandgap structures are arranged in a periodic array on a plane; and two adjacent three-dimensional electromagnetic bandgap structure units are connected by non-contact interdigital electromagnetic coupling through the comb-shaped electrode structure 5 of their respective edge coupling regions.

[0068] It is understandable that the geometric dimensions in this embodiment (such as the finger width and spacing of 0.01 mm) are key to precisely controlling the distributed capacitance value, because the capacitance value is directly proportional to the area of ​​the conductors facing each other and inversely proportional to the spacing, while the length and path of the conductors affect the magnitude of the parasitic inductance; through this precise two-dimensional planar design, the unit can achieve efficient noise suppression within a specific frequency band (e.g., the gigahertz range), and more importantly, as Figure 3 As shown, such basic units can be replicated and arranged in a two-dimensional array. The units are electromagnetically coupled through comb-like structures at their edges. This coupling effect enables the narrow-band suppression characteristics of individual units to be extended and integrated, ultimately forming a wider and flatter noise suppression band, thereby meeting the stringent power integrity requirements of modern high-speed chips.

[0069] Understandably, by coupling three basic structures and arranging them in a precise geometric pattern to form a periodic structure, this design is well-structured and suitable for standard PCB manufacturing. The highly symmetrical coupling design enables precise control and enhancement of electromagnetic performance. The interdigitated electrodes around the perimeter provide conditions for the interactive coupling of adjacent three-dimensional EBG structures, establishing a controllable electromagnetic coupling mechanism between them. This creates a distributed, efficient electric and magnetic field interaction region between the two signal channels. The staggered finger electrodes form a distributed, efficient electromagnetic interaction region, achieving performance improvements far exceeding those of simple parallel connections. It effectively filters out interference and noise, while symmetry ensures the stability and consistency of signal transmission. Treating the overall structure as a highly symmetrical single system not only increases functional density but also reduces sensitivity and ensures performance consistency. Through a strong coupling mechanism, the ordinary resonant structure is transformed into a functional module with excellent filtering characteristics. The central coupling region acts as an energy exchange channel, promoting a strong and controllable interaction between the electromagnetic fields of the two units, thereby achieving a wider suppression bandwidth and effectively suppressing noise over a wider frequency range. The symmetrical composite unit design also improves power handling capability, enables more uniform energy distribution, and further enhances the system's power integrity and anti-interference capability.

[0070] In this embodiment, two adjacent comb-shaped electrode structures 5 with three-dimensional electromagnetic bandgap structures interlock with each other, forming a distributed electric and magnetic field interaction region in the interlocking region to generate coupled resonant modes.

[0071] Understandably, when the metal teeth 7 of adjacent units are inserted into each other's gaps, the structure creates a distributed and efficient electric and magnetic field interaction region between the two signal channels. Within this interaction region, a distributed and efficient electromagnetic interaction region is formed by interlaced finger electrodes, allowing the electric and magnetic fields to no longer be confined to the interior of a single unit, but to exchange energy across physical boundaries.

[0072] This intermediate coupling region, acting as an energy exchange channel, induces a strong and controllable interaction between the electromagnetic fields of the two units, thereby exciting coupled resonant modes distinct from the intrinsic resonances of a single unit. The generation mechanism of these coupled resonant modes lies in the fact that the near-field coupling between units extends the equivalent resonant path, causing coupling and hybridization effects in their respective intrinsic modes. These coupled resonant modes can further fill the transition frequency band between the stopbands of individual units, thus merging the originally discrete resonant points into a continuous stopband, ultimately achieving a performance improvement and a wider suppression bandwidth far exceeding that of simple parallel connections.

[0073] In this embodiment, the three-dimensional electromagnetic bandgap array system is used to generate a superposition of multiple resonant modes, which include:

[0074] Intrinsic resonant modes formed by interdigitated electrodes and through-silicon vias within a single three-dimensional electromagnetic bandgap structure;

[0075] And the coupled resonant modes formed by the interaction between adjacent units through the comb-shaped electrode structure 5;

[0076] The intrinsic resonant mode and the coupled resonant mode are superimposed in the frequency domain to form a continuous wideband noise suppression stopband.

[0077] It should be noted that, in this embodiment, the core working mechanism of the three-dimensional electromagnetic bandgap array system lies in utilizing a three-dimensional multi-resonance cooperative mechanism to generate multiple resonant modes superposition, thereby breaking through the bandwidth limitation of a single resonant unit. Specifically, the multiple resonant modes first include the intrinsic resonant modes formed by the interdigital electrodes and through-silicon vias within a single three-dimensional electromagnetic bandgap structure; and each unit itself forms a local resonance through interdigital capacitance and TSV inductance, generating a basic stopband. This means that the planar interdigital coupling and vertical TSV interconnection within each independent unit construct a basic LC oscillation circuit, establishing the main frequency band for noise suppression.

[0078] Based on this, the system introduces a coupled resonant mode formed by the interaction between adjacent units through the comb-shaped electrode structure 5. The coupling between units in the structure extends the equivalent resonant path and introduces a multi-resonant point superposition effect. The distributed electromagnetic interaction established by the comb-shaped electrodes at the edges of adjacent units in the interlaced region enables the electromagnetic coupling between units to achieve mode superposition through near-field energy exchange, thereby exciting a coupled resonant mode that is different from the intrinsic mode.

[0079] Ultimately, the intrinsic resonant mode and the coupled resonant mode are superimposed in the frequency domain. The coupled resonant mode can further fill the transition frequency band between the stopbands of a single unit, thereby forming a continuous and flat broadband suppression characteristic; as shown in the appendix. Figure 5 As shown, this mechanism enables the array system in this embodiment to achieve deep noise suppression of approximately -95dB across the entire 0~20GHz frequency band, with a smooth stopband response and no significant fluctuations. Through the synergistic effect of this intrinsic and coupled mode, the system effectively overcomes the shortcomings of traditional EBG structures, such as narrow stopband and steep band edge transitions, achieving simultaneous improvement in bandwidth expansion and suppression depth, and providing a continuous wideband noise suppression stopband for three-dimensional integrated circuits.

[0080] It should also be noted that the appendix Figure 5 Simulation results show that the structure achieves deep noise suppression of less than -95dB in the 0~20GHz frequency band, and has a stable response throughout the entire frequency band, maintaining a stable high suppression level over a wide bandwidth, demonstrating excellent broadband noise isolation performance.

[0081] Structurally, a three-unit cascaded coupling topology is adopted. Each unit consists of a quasi-interdigital capacitor structure embedded in the dielectric substrate 1 and a vertically oriented through-silicon via (TSV) array, forming a basic resonant unit. Electromagnetic coupling between units is achieved through in-plane quasi-interdigital electrodes, forming a lateral signal-energy interaction path. Meanwhile, vertical low-impedance connections are established between upper and lower layers through a high-density TSV array, constructing a three-dimensional distributed electromagnetic bandgap network. This design extends the equivalent resonant path through inter-unit coupling and introduces a multi-resonance point superposition effect, thereby effectively widening the stopband bandwidth. The TSV array enhances interlayer electric field coupling while also improving structural stability and process compatibility.

[0082] This excellent noise suppression characteristic benefits from the multi-scale coupled electromagnetic design. The interdigital coupling structure forms a distributed capacitor-inductor network between units, expanding the resonant response bandwidth in the planar direction. The TSV array enhances the electric field confinement capability in the vertical direction, constructing a three-dimensional electromagnetic bandgap, effectively suppressing the propagation of common-mode noise. The periodic pattern in the structure further introduces local resonant modes, which work synergistically with the coupling effect between units, resulting in multiple stopband superpositions across a wide frequency range, thus achieving continuous deep suppression from low to high frequencies. The multi-unit coupling structure brings about the superposition effect of multiple resonant modes: each unit itself forms a local resonance through interdigital capacitors and TSV inductors, generating a basic stopband; while the coupling structure between units introduces coupled resonances, further filling the transition frequency band between individual unit stopbands, thus forming a continuous and flat wideband suppression characteristic. In addition, the three-dimensional stacking layout effectively enhances the space utilization of the structure, making it particularly suitable for suppressing synchronous switching noise (SSN) and electromagnetic interference (EMI) in power distribution networks in high-density integrated circuits.

[0083] The above are merely preferred embodiments of the present invention and do not limit the scope of the patent. Any equivalent structural or procedural transformations made based on the description and drawings of the present invention, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of the present invention.

Claims

1. A three-dimensional electromagnetic bandgap structure based on through-silicon vias (TSVs), characterized in that, The three-dimensional electromagnetic bandgap structure includes: a dielectric substrate, a first metal layer and a second metal layer respectively disposed on the upper and lower surfaces of the dielectric substrate, and an array of through holes penetrating the dielectric substrate and used to connect the first metal layer and the second metal layer. The first metal layer and the second metal layer each include a central resonant region and an edge coupling region surrounding the central resonant region. The central resonant region is provided with an interdigitated electrode structure, which is used to generate planar distributed capacitance. The edge coupling region is provided with a comb-shaped electrode structure, which is used to realize electromagnetic coupling. One end of the via array is connected to the interdigitated electrode structure of the first metal layer, and the other end is connected to the interdigitated electrode structure of the second metal layer to form a three-dimensional resonant circuit. The comb-shaped electrode structure includes a plurality of metal teeth extending outward from the central resonant region; the metal teeth are periodically arranged along the outer contour of the three-dimensional electromagnetic bandgap structure, and the material of the dielectric substrate includes silicon.

2. The three-dimensional electromagnetic bandgap structure based on through-silicon vias as described in claim 1, characterized in that, The interdigitated electrode structure and the comb-shaped electrode structure of the first metal layer and the second metal layer are mirror images or completely overlapped on the dielectric substrate. The interdigitated electrode structure and the comb-shaped electrode structure form a parallel capacitor network through the through-hole array.

3. The three-dimensional electromagnetic bandgap structure based on through-silicon vias as described in claim 1, characterized in that, The interdigitated electrode structure comprises multiple metal segments arranged in an interlaced manner; the linewidth of each metal segment is equal to the spacing between adjacent metal segments.

4. The three-dimensional electromagnetic bandgap structure based on through-silicon vias as described in claim 3, characterized in that, The vias in the via array are located at the root connection of the metal segments within the interdigitated electrode structure, so as to vertically connect the first metal layer and the second metal layer, thereby enabling the three-dimensional electromagnetic bandgap structure to generate parallel resonant impedance characteristics within a preset frequency band.

5. A three-dimensional electromagnetic bandgap structure based on through-silicon vias as described in claim 1, characterized in that, The first metal layer, the second metal layer, and the via array are all filled with copper; the first metal layer and the second metal layer are located within the silicon dioxide dielectric layer on the surface of the dielectric substrate.

6. A three-dimensional electromagnetic bandgap array system, characterized in that, The three-dimensional electromagnetic bandgap array system includes several three-dimensional electromagnetic bandgap structures based on silicon vias as described in any one of claims 1 to 5; the several three-dimensional electromagnetic bandgap structures are arranged in a periodic array on a plane; and non-contact interdigital electromagnetic coupling is formed between two adjacent three-dimensional electromagnetic bandgap structure units through the comb-shaped electrode structure of their respective edge coupling regions.

7. A three-dimensional electromagnetic bandgap array system as described in claim 6, characterized in that, Two adjacent comb-shaped electrode structures with three-dimensional electromagnetic bandgap structures interlock with each other, forming a distributed electric and magnetic field interaction region in the interlocking area to generate coupled resonant modes.

8. A three-dimensional electromagnetic bandgap array system as described in claim 6, characterized in that, The three-dimensional electromagnetic bandgap array system is used to generate a superposition of multiple resonant modes, which include: Intrinsic resonant modes formed by interdigitated electrodes and through-silicon vias within a single three-dimensional electromagnetic bandgap structure; And the coupled resonant modes formed by the interaction between adjacent units through the comb-shaped electrode structure; The intrinsic resonant mode and the coupled resonant mode are superimposed in the frequency domain to form a continuous wideband noise suppression stopband.

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