Semiconductor component and manufacturing method thereof

Abstract

The invention discloses a semiconductor component and a manufacturing method thereof. The method comprises the steps that a part body is provided, the part body comprises a to-be-treated face, and the to-be-treated face makes contact with a plasma environment; forming a first corrosion-resistant coating on the to-be-treated surface; punching treatment is conducted, and a through hole penetrating through the first corrosion-resistant coating and the part body is formed; and forming a second corrosion-resistant coating on the inner wall of the through hole and the surface of the first corrosion-resistant coating. The first corrosion-resistant coating with enough thickness can be formed on the surface of the part body to improve the corrosion resistance of the part body, and meanwhile, a loose coating is prevented from being formed on the inner wall of the through hole. And a second corrosion-resistant coating with high density and high shape preservation is further formed on the inner wall of the through hole and the surface of the first corrosion-resistant coating through the ALD technology, so that the overall corrosion resistance of the part body is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a semiconductor component and its manufacturing method. Background Technology

[0002] In plasma equipment, corrosion-resistant coatings are frequently used in the fabrication of corrosion-resistant components to improve their resistance to plasma corrosion and extend their service life. These coatings are typically prepared using techniques such as plasma spraying (PS), physical vapor deposition (PVD), or atomic layer deposition (ALD).

[0003] However, existing processes for forming corrosion-resistant coatings on the surface and inside the pores of components with high aspect ratio pore structures (such as gas spray heads) cannot meet the high corrosion resistance requirements of these components. When using PS or PVD technology to deposit corrosion-resistant coatings, due to the line-of-sight effect and contact angle, the coatings deposited inside the pores suffer from problems such as poor uniformity, low coverage, and weak adhesion to the pore walls, making the subsequent corrosion-resistant coating prone to peeling off and causing particulate contamination. ALD technology can deposit coatings with high density, good uniformity, and high coverage on substrates with complex geometries, but its deposition rate is slow, and the total thickness of the prepared coating is usually thin (usually less than 1 μm), making it easily worn and consumed, thus losing its protective effect on the components, resulting in poor corrosion resistance and short service life. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor component and its manufacturing method to improve the corrosion resistance of the surface and internal coating of the component with a high aspect ratio hole structure and reduce particulate contamination.

[0005] To achieve the above objectives, the present invention provides a method for manufacturing a semiconductor component, comprising the following steps:

[0006] A component body is provided, which includes a surface to be processed, the surface to be processed being in contact with a plasma environment;

[0007] A first corrosion-resistant coating is formed on the surface to be treated;

[0008] Drilling process to form a through hole that penetrates the first corrosion-resistant coating and the component body;

[0009] A second corrosion-resistant coating is formed on the inner wall of the through hole and on the surface of the first corrosion-resistant coating.

[0010] Optionally, the method for forming the second corrosion-resistant coating includes an atomic layer deposition process.

[0011] Optionally, the second corrosion-resistant coating includes a yttrium oxide layer.

[0012] Optionally, the method for forming the first corrosion-resistant coating includes either physical vapor deposition or aerosol deposition.

[0013] Optionally, the first corrosion-resistant coating includes at least one of an alumina layer, a yttrium aluminum garnet layer, a yttrium oxide layer, or a yttrium fluoride oxyfluoride layer.

[0014] Optionally, the process further includes forming a buffer layer; after the drilling process and before the formation of the second corrosion-resistant coating, the buffer layer is formed on the inner wall of the through hole and on the surface of the first corrosion-resistant coating; and then the second corrosion-resistant coating is formed on the surface of the buffer layer.

[0015] Optionally, the method for forming the buffer layer includes an atomic layer deposition process.

[0016] Optionally, the drilling direction of the drilling process is from the first corrosion-resistant coating to the component body.

[0017] Optionally, ultrasonic-assisted drilling technology can be used to perform the drilling process.

[0018] Optionally, the apex of the through hole at one end of the first corrosion-resistant coating is set to a 90° rounded corner.

[0019] Optionally, the radius of the fillet is 0.3mm-0.6mm.

[0020] Optionally, the through hole has a high aspect ratio of 10:1 to 40:1.

[0021] Another aspect of the present invention provides a semiconductor component, comprising:

[0022] The component body, which includes the surface to be processed;

[0023] A first corrosion-resistant coating is applied to the surface to be treated.

[0024] A through hole that penetrates the first corrosion-resistant coating and the component body;

[0025] A second corrosion-resistant coating covers at least the inner wall of the through-hole and the surface of the first corrosion-resistant coating.

[0026] Optionally, the second corrosion-resistant coating is an atomic layer deposition coating, the material of which includes yttrium oxide, a thickness of 0.5 μm-1 μm, and a surface porosity of 0%.

[0027] Optionally, the first corrosion-resistant coating is a physical vapor deposition coating or an aerosol deposition coating, the material of which includes at least one of alumina, yttrium aluminum garnet, yttrium oxide or yttrium oxyfluoride, and the thickness is 10μm-30μm.

[0028] Optionally, it also includes:

[0029] A buffer layer is located at least between the inner wall of the through hole and the second corrosion-resistant coating, and between the first corrosion-resistant coating and the second corrosion-resistant coating.

[0030] Optionally, the buffer layer is an atomic layer deposition coating, the material of which includes at least one of the following: an alumina layer, a yttrium aluminum garnet layer, a yttrium oxide layer, or a yttrium oxyfluoride layer, with a thickness of 0.5 μm-1 μm and a surface porosity of 0%.

[0031] Optionally, the semiconductor component includes any one of a gas spray head, a plasma confinement ring, or an electrostatic chuck.

[0032] Optionally, the semiconductor component is a gas spray head, and the inner diameter of the through hole is 0.3mm-1mm.

[0033] In another aspect, the present invention provides a semiconductor device, characterized in that the semiconductor device comprises the aforementioned semiconductor components.

[0034] Compared with the prior art, the beneficial effects of the technical solution of the present invention include at least the following:

[0035] Unlike existing methods that directly prepare corrosion-resistant coatings on the surface and inside the holes of components with through-hole structures, this invention proposes for the first time a method of "forming a first corrosion-resistant coating on the surface of a component without through-hole structures using line-of-sight deposition technology before the through-hole is formed" and "preparing a second corrosion-resistant coating on the surface and inside the holes of the component using atomic layer deposition technology after the through-hole is formed". This method can form a first corrosion-resistant coating of sufficient thickness on the surface of the component to improve the corrosion resistance of the component, while avoiding the formation of a loose first corrosion-resistant coating on the inner wall of the through-hole, thereby reducing the risk of subsequent loose coating falling off and causing particulate contamination.

[0036] Furthermore, ALD technology is used to form a high-density, high-conformity second corrosion-resistant coating on the inner wall of the through hole and the surface of the first corrosion-resistant coating. This not only gives the inner wall of the through hole excellent corrosion resistance, but also further improves the plasma corrosion resistance of the component body surface.

[0037] Furthermore, by introducing a buffer layer between the second corrosion-resistant coating and the first corrosion-resistant coating, as well as the inner wall of the through hole, the stress difference between the second corrosion-resistant coating and the first corrosion-resistant coating, as well as the inner wall of the through hole, is reduced, preventing cracks in the second corrosion-resistant coating, improving the adhesion of the second corrosion-resistant coating and the reliability of the overall structure, and extending the service life of semiconductor components. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of the structure of a capacitively coupled plasma device provided in an embodiment of the present invention.

[0039] Figure 2 This is a flowchart of a semiconductor component manufacturing method according to an embodiment of the present invention.

[0040] Figure 3 for Figure 2 A schematic diagram of the structure of the component body and surface coating during the formation of the embodiment.

[0041] Figure 4 A flowchart of a semiconductor component manufacturing method provided in another embodiment of the present invention.

[0042] Figure 5 for Figure 4 A schematic diagram of the structure of the component body and surface coating during the formation of the embodiment.

[0043] Figure 6 This is a schematic diagram of the through-hole structure of a component body provided in an embodiment of the present invention.

[0044] Figure 7 A schematic diagram of a semiconductor component structure is provided for another embodiment of the present invention.

[0045] Attached image labels:

[0046] Reaction chamber 1; base 2; focusing ring 21; edge ring 22; plasma confinement ring 23; substrate w; electrostatic chuck 3; gas spray head 4; radio frequency source 5; component body 10; surface to be treated 11; through hole 12; first corrosion resistant coating 20; second corrosion resistant coating 30; buffer layer 40. Detailed Implementation

[0047] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0048] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0049] It should also be noted that when a component is referred to as "fixed to" or "set on" another component, it can be directly on the other component or may have an intervening component present. When a component is referred to as "connected to" another component, it can be directly connected to the other component or may have an intervening component present.

[0050] As described in the background section, when using line-of-sight deposition techniques, including physical vapor deposition (PVD) and plasma spraying (PS), to form corrosion-resistant coatings on the surface of components with high aspect ratio hole structures, although these techniques can prepare relatively thick corrosion-resistant coatings on the component surface to resist the erosion of plasma in the semiconductor device chamber, the coating material will inevitably be deposited into the holes at the same time, forming a loose corrosion-resistant coating inside the holes. Subsequently, the loose coating is easy to fall off and generate particulate contamination. Atomic layer deposition (ALD) technology is suitable for depositing corrosion-resistant coatings with good uniformity and high coverage on the surface of components with complex geometries (including holes or grooves with high aspect ratios), but each reaction only forms a single layer or a few atomic layers, so the deposition rate is slow and the total thickness of the deposited coating is limited (usually less than 1 μm). It is easily worn and consumed, and it is difficult to form a coating of sufficient thickness on the component surface to resist the erosion of plasma in the chamber.

[0051] To prevent coating molecules from falling into pores during the deposition process of line-of-sight deposition (LAS), some studies have proposed using polymers or metal plugs to seal the pores. However, in practical applications, it has been found that polymers are generally unable to withstand the high temperatures of approximately 250°C to 900°C during the preparation of corrosion-resistant coatings. Under high temperatures, polymers will quickly carbonize or vaporize, forming organic pollutants that contaminate parts and cavities. On the other hand, metals are prone to interfacial diffusion and migration of metal atoms at high temperatures, which can easily remain on parts and cause metal contamination during the etching process. Furthermore, metal plugs usually require manual operation, and thousands of pores need to be plugged manually, resulting in extremely high time and labor costs.

[0052] In summary, existing corrosion-resistant coatings formed on the surface and inside the holes of components with high aspect ratio holes cannot meet the high corrosion resistance requirements of semiconductor components.

[0053] To address the aforementioned technical problems, this invention provides a semiconductor component and its manufacturing method. Unlike existing methods that directly prepare corrosion-resistant coatings on the surface and within the holes of a component with a through-hole structure, this invention first uses line-of-sight deposition (ALD) technology to deposit a first corrosion-resistant coating on the surface of a component without a through-hole structure (i.e., a surface with a complete plane or curved surface). Then, through a drilling process, a through-hole structure is formed, penetrating the component body and the first corrosion-resistant coating. This allows for the formation of a sufficiently thick first corrosion-resistant coating on the component body surface to improve its plasma corrosion resistance, while avoiding the formation of a loose first corrosion-resistant coating on the inner wall of the through-hole, reducing the risk of subsequent particulate contamination from the loose coating. Furthermore, ALD technology is used to form a high-density and high-coverage second corrosion-resistant coating on the inner wall of the through-hole and the surface of the first corrosion-resistant coating. This gives the inner wall of the through-hole excellent corrosion resistance while further enhancing the plasma corrosion resistance of the component body surface. In addition, a buffer layer is introduced to reduce the stress difference between the second corrosion-resistant coating, the first corrosion-resistant coating, and the inner wall of the through-hole, improving the adhesion of the second corrosion-resistant coating and the overall structural reliability, thus extending the service life of the semiconductor component.

[0054] The semiconductor components manufactured using this invention can be used in plasma processing devices.

[0055] Figure 1 A capacitively coupled plasma device 100 provided in an embodiment of the present invention includes:

[0056] The reaction chamber 1 contains a base 2.

[0057] An electrostatic chuck 3 is located above the base 2. The electrostatic chuck 3 is used to carry the substrate w to be processed and also serves as the lower electrode of the reaction chamber 1.

[0058] A gas spray head 4, disposed opposite to the electrostatic chuck 3, is used to supply process gas to the reaction chamber 1 and also serves as the upper electrode of the reaction chamber 1; and,

[0059] At least one radio frequency source 5 is electrically connected to the gas spray head 4 or the electrostatic chuck 3 (in this embodiment, it is connected to the electrostatic chuck 3) to generate a radio frequency electric field between the upper electrode and the lower electrode to dissociate the process gas into plasma.

[0060] A focusing ring 21 and an edge ring 22 are arranged around the base 2 to adjust the electric field or temperature distribution around the substrate w; a plasma confinement ring 23 is arranged around the edge ring 22 to confine the plasma in the reaction region between the upper and lower electrodes and prevent the plasma from leaking into the non-reaction region.

[0061] In this embodiment, at least one of the electrostatic chuck 3, the gas spray head 4, or the plasma confinement ring 23 is manufactured by the manufacturing method provided by the present invention. However, it should be understood that... Figure 1 As an example only, in addition to the aforementioned electrostatic chuck, gas spray head, and plasma confinement ring, the method of the present invention can also be applied to the fabrication of other semiconductor components with high aspect ratio hole structures and directly exposed to plasma bombardment areas.

[0062] Furthermore, it should be understood that the plasma processing apparatus provided by this invention can be any type of plasma apparatus containing semiconductor components with high aspect ratio aperture structures and directly exposed to the plasma bombardment region. For example, it can also be other plasma processing apparatuses such as inductively coupled plasma reactors (ICP), electron cyclotron resonance plasma reactors (ECR), plasma-assisted chemical vapor deposition (PECVD), and plasma edge etching apparatuses (Bevel Etch).

[0063] The semiconductor components and their manufacturing methods provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0064] As attached Figure 2 and Figure 3 As shown, one embodiment of the present invention provides a method for manufacturing a semiconductor component, comprising:

[0065] Step 101: Provide a component body 10, which includes a surface to be processed 11, the surface to be processed 11 being in contact with the plasma environment.

[0066] The component body 10 does not have an opening structure, such as Figure 3 As shown in (a), the surface to be treated 11 is a continuous and complete plane or curved surface without any recessed structure (such as holes or grooves). This allows the deposition of the first corrosion-resistant coating 20 on the surface to be treated 11 using line-of-sight deposition technology to avoid the problem of loose coating formation caused by the line-of-sight effect, ensuring that the first corrosion-resistant coating 20 deposited on the surface to be treated 11 has excellent properties such as high density, high uniformity and high adhesion.

[0067] The material of the component body 10 includes, but is not limited to, aluminum, aluminum alloy, silicon, or silicon carbide, and the specific material selection is determined according to the specific type of semiconductor component to be manufactured. In some embodiments, the semiconductor component is a gas spray head, and the material of the component body 10 is aluminum or aluminum alloy; in other embodiments, the semiconductor component is a plasma confinement ring, and the material of the component body 10 is aluminum, silicon, or silicon carbide.

[0068] Step 102: Form a first corrosion-resistant coating 20 on the surface to be treated 11, see reference. Figure 3 The structure shown in (b) is shown in the middle.

[0069] The first corrosion-resistant coating 20 has characteristics such as high density, low porosity and thick thickness, which is used to improve the resistance of the surface 11 to be treated in the plasma environment to plasma erosion and extend the service life of semiconductor components.

[0070] In some embodiments, the first corrosion-resistant coating 20 includes at least one of an alumina layer, a yttrium aluminum garnet layer, a yttrium oxide layer, or a yttrium fluoride oxyfluoride layer.

[0071] In some embodiments, the first corrosion-resistant coating 20 is formed by physical vapor deposition, and the porosity of the first corrosion-resistant coating 20 is zero; in other embodiments, the first corrosion-resistant coating 20 is formed by aerosol deposition, and the porosity of the first corrosion-resistant coating 20 is close to zero (less than 1%); in other embodiments, other line-of-sight deposition techniques, such as suspension plasma spraying, can also be used to form the first corrosion-resistant coating 20 on the surface to be treated 11.

[0072] Step 103, drilling process to form a through hole 12 penetrating the first corrosion-resistant coating 20 and the component body 10, see reference. Figure 3 The structure shown in (c) is as follows.

[0073] In some embodiments, ultrasonic-assisted drilling technology is used to achieve the drilling process, and the through hole 12 has a high aspect ratio, for example, the aspect ratio is 10:1-40:1.

[0074] The drilling direction is from the first corrosion-resistant coating 20 to the component body 10. This is to avoid adverse effects from other material debris generated during the drilling process on the drilling of the first corrosion-resistant coating 20. It is understood that if the drilling direction were reversed, i.e., from the component body 10 to the first corrosion-resistant coating 20, the initial drilling of the component body 10 would generate component body material debris. As the drill continues drilling, some of this debris would be carried into the drilling process of the first corrosion-resistant coating 20, increasing the friction between the drill and the first corrosion-resistant coating 20. This could easily cause the first corrosion-resistant coating 20 to be subjected to excessive pressure during drilling, resulting in cracks or even breakage. This would significantly reduce the corrosion resistance of the first corrosion-resistant coating 20 and pose a risk of subsequent coating cracking and peeling, leading to particulate contamination.

[0075] It should be noted that the number, size, and position distribution of the through holes 12 obtained after the drilling process in this step are designed according to actual application requirements, and this invention does not impose specific limitations on them. As an example, when the semiconductor component is a gas spray head, the number of through holes 12 is several, the inner diameter of the through holes 12 is 0.3mm-1mm, and the positions of the through holes 12 are concentrically distributed from the inside to the outside with the center of the gas spray head as the center. The concentric distribution helps to improve the uniformity of process gas diffusion.

[0076] Step 104: A second corrosion-resistant coating 30 is formed on the inner wall of the through hole 12 and on the surface of the first corrosion-resistant coating 10. (See reference...) Figure 3 The structure shown in (d) is shown in the middle.

[0077] In this embodiment, atomic layer deposition (ALD) technology is used to form the second corrosion-resistant coating 30. The ALD deposition process is carried out through a self-limiting reaction of chemical adsorption, so the formed second corrosion-resistant coating 30 has advantages such as good uniformity, high density, and good shape retention. In particular, it can form a high-density and high-coverage second corrosion-resistant coating 30 on the inner wall surface of the through hole 12, avoiding the formation of a loose coating inside the through hole 12 and improving the corrosion resistance of semiconductor components.

[0078] In some embodiments, the second corrosion-resistant coating 30 includes a yttrium oxide layer.

[0079] It should be pointed out that, such as Figure 7 As shown, in some embodiments, the opposite face of the surface to be processed 11 (i.e., the surface to be processed 11) can also be selected simultaneously, depending on the application requirements. Figure 7 The second corrosion-resistant coating 30 is deposited on the upper surface of the semiconductor component body 10 to improve the overall corrosion resistance of the semiconductor component.

[0080] As attached Figure 4 and attached Figure 5 As shown, one embodiment of the present invention also provides another method for manufacturing a semiconductor component, and the semiconductor structure finally formed in this embodiment is as follows. Figure 5 As shown. Unlike the previous embodiments, this embodiment, after completing step 203 (drilling) and before step 205 (forming the second corrosion-resistant coating 30), further includes:

[0081] Step 204, forming a buffer layer 40.

[0082] The buffer layer 40 is formed by depositing the buffer layer 40 on the inner wall of the through-hole 12 and the surface of the first corrosion-resistant coating 20 using ALD technology, and then the second corrosion-resistant coating 30 is formed on the surface of the buffer layer 40. (See reference) Figure 5 The structures shown in (d) and (e) are shown in the middle.

[0083] On one hand, the buffer layer 40 is used to reduce the stress difference between the first corrosion-resistant coating 20 and the second corrosion-resistant coating 30 due to the large difference in their thermal expansion coefficients and the different deposition processes. For example, the material of the buffer layer 40 is first limited to being the same as or having a similar thermal expansion coefficient to the first corrosion-resistant coating 20, such as at least one of alumina, yttrium aluminum garnet, yttrium oxide, or yttrium oxyfluoride. Furthermore, the buffer layer 40 is deposited using the same process as the subsequent second corrosion-resistant coating 30 (both using ALD technology), ensuring similar chemical and physical conditions during the growth process of the second corrosion-resistant coating 30 and the buffer layer 40, reducing stress caused by process differences and achieving stress release. On the other hand, the buffer layer 40 also reduces the stress difference between the inner wall of the via and the second corrosion-resistant coating 30 due to the large difference in their thermal expansion coefficients. Ultimately, the buffer layer 40 provides stress buffering, preventing cracks in the second corrosion-resistant coating 30, improving the adhesion of the second corrosion-resistant coating 30 and the overall structural reliability, and extending the service life of semiconductor components.

[0084] In some embodiments, such as Figure 6 As shown, after the drilling process is completed and before the buffer layer 40 or the second corrosion-resistant coating 30 is deposited, the apex corner of the through-hole 12 is also processed: the apex corner of the first end 121 of the through-hole 12 (i.e., the apex corner located at one end of the first corrosion-resistant coating 20) is processed into a 90° rounded corner by grinding, machining, or laser cutting. It can be understood that processing the apex corner of the first end 121 of the through-hole 12 from a sharp corner to a 90° rounded corner helps improve the uniformity of the distribution of the subsequently deposited buffer layer 40 or the second corrosion-resistant coating 30, resulting in better coating adhesion. More importantly, the 90° rounded corner helps to distribute stress more evenly, avoiding excessive stress concentration at specific points, thereby improving coating quality, preventing defects such as cracks in the coating, and preventing coating peeling. Furthermore, when the semiconductor component is a gas spray head, processing the apex corner of the first end 121 of the through-hole 12 from a sharp corner to a 90° rounded corner also helps to improve the uniformity of gas diffusion.

[0085] Furthermore, in some embodiments, the radius of the fillet is 0.3mm-0.6mm.

[0086] In some embodiments, to improve the quality of the subsequent deposition of the buffer layer 40 or the second corrosion-resistant coating 30, after completing the drilling process or the treatment of the apex corner of the through hole 12, a cleaning step is further included: the component body after the drilling process or through hole apex corner treatment is placed in an ultrasonic cleaning tank for cleaning to remove surface contaminants, and then dried at 80°C for later use. Furthermore, in some embodiments, during cleaning, the first corrosion-resistant coating 20 faces the ultrasonic transducer to improve the cleaning force and efficiency of the first corrosion-resistant coating 20 surface.

[0087] Based on the aforementioned manufacturing method, such as Figure 7 As shown, another embodiment of the present invention provides a semiconductor component, including: a component body 10, which includes a surface to be processed 11; a first corrosion-resistant coating 20, which is located on the surface to be processed 11; a through hole 12, which penetrates the first corrosion-resistant coating 20 and the component body 10; and a second corrosion-resistant coating 30, which at least covers the inner wall of the through hole 12 and the surface of the first corrosion-resistant coating 20 (in this embodiment, it also covers the opposite surface of the surface to be processed 11).

[0088] The second corrosion-resistant coating 30 is an atomic layer deposition coating with a porosity of 0. In some embodiments, the first corrosion-resistant coating 20 is an aerosol deposition coating (with a porosity close to 0), and the second corrosion-resistant coating 30 has a smaller porosity than the first corrosion-resistant coating 20. The dense and non-porous second corrosion-resistant coating 30 further enhances the corrosion resistance of the semiconductor component. In other embodiments, the first corrosion-resistant coating 20 is a physical vapor deposition coating (with a porosity of 0), and the second corrosion-resistant coating 30 has the same porosity as the first corrosion-resistant coating 20.

[0089] In some embodiments, the thickness of the first corrosion-resistant coating 20 is 10μm-30μm. If the thickness is too thin, it is easily worn away and cannot provide good resistance to plasma corrosion; if the thickness is too thick, it will result in cost waste and increase the difficulty of the process. The material of the first corrosion-resistant coating 20 includes at least one of alumina, yttrium aluminum garnet, yttrium oxide, or yttrium oxyfluoride.

[0090] In some embodiments, the thickness of the second corrosion-resistant coating 30 is 0.5 μm-1 μm, and its material includes yttrium oxide.

[0091] In some embodiments, a buffer layer 40 is further included. This buffer layer is located at least between the inner wall of the through-hole 12 and the second corrosion-resistant coating 30, and between the first corrosion-resistant coating 20 and the second corrosion-resistant coating 30 (in this embodiment, it is also located between the opposite surface of the surface to be treated 11 and the second corrosion-resistant coating 30). The buffer layer 40 is an atomic layer deposition coating with 0% surface porosity and a thickness of 0.5 μm-1 μm, and its material includes alumina or yttrium aluminum garnet. The buffer layer 40 acts as a stress buffer to prevent cracking of the second corrosion-resistant coating 30, thereby improving the reliability and stability of the corrosion resistance of the semiconductor components.

[0092] Example 1

[0093] This embodiment provides a method for manufacturing a semiconductor component, see attached figure. Figure 7 The structure of the semiconductor component shown is described, and the manufacturing method includes:

[0094] A spray head substrate (i.e., component body 10) without through-hole structure is provided. The substrate is a cylindrical 6061T aluminum disk. An alumina layer (i.e., the first corrosion-resistant coating 20) of 10μm-30μm is deposited on the surface 11 to be treated of the component body 10 using an electron beam assisted evaporation deposition process. The process conditions are as follows: alumina powder of 99.9% or higher purity is used as the evaporation source, the component body 10 is placed above the evaporation source, the temperature is 160℃-220℃, and the distance between the substrate and the evaporation source is 600mm-1200mm.

[0095] The component body 10, after the above steps, is drilled using ultrasonic-assisted drilling. The drilling direction is from the first corrosion-resistant coating 20 to the component body 10, forming a through hole 12 that penetrates the component body 10 and the first corrosion-resistant coating 20. After drilling, the component body 10 is placed in an ultrasonic cleaning tank for cleaning. The frequency of the ultrasonic generator is 40 kHz, and the power density is 0.5-1.5 W / inch. 2 During cleaning, the first corrosion-resistant coating 20 faces the ultrasonic transducer. After cleaning, place it in a drying oven at 80℃ for 4-6 hours.

[0096] The component body 10 after the above steps is placed in the ALD reaction chamber, and atomic layer deposition is performed using an aluminum-containing precursor (such as trimethylaluminum) and an oxygen-containing precursor (such as water vapor) as raw materials. An alumina layer (i.e., buffer layer 40) is deposited on the opposite surfaces of the first corrosion-resistant coating 20, the inner wall of the through hole 12, and the surface to be treated 11. Process conditions: The two precursors are alternately introduced and discharged from the ALD reaction chamber. The temperature range of the reaction chamber is 200℃-300℃. One thin film growth cycle consists of one introduction of an aluminum-containing precursor and one introduction of an oxygen-containing precursor. After 5000-10000 growth cycles, the buffer layer 40 is deposited.

[0097] After the above steps are completed, atomic layer deposition continues using a yttrium-containing precursor (such as tricyclopentadienyl yttrium) and an oxygen-containing precursor (such as water vapor) as raw materials to deposit an alumina layer (i.e., the second corrosion-resistant coating 30) on the surface of the buffer layer 40. Process conditions: The two precursors are alternately introduced and discharged from the ALD reaction chamber, the temperature range of the reaction chamber is 250℃-350℃, and one thin film growth cycle consists of one introduction of the yttrium-containing precursor and one introduction of the oxygen-containing precursor. After 5000-10000 growth cycles, the second corrosion-resistant coating 30 is deposited.

[0098] In summary, this invention first utilizes line-of-sight deposition (ALD) technology to deposit a first corrosion-resistant coating on the surface of a component body without through-hole structures (i.e., the surface of the component body is a complete plane or curved surface). Then, through a drilling process, through-hole structures are formed, penetrating the component body and the first corrosion-resistant coating. This allows for the formation of a sufficiently thick first corrosion-resistant coating on the surface of the component body to improve its corrosion resistance, while avoiding the formation of a loose coating on the inner wall of the through-hole. Furthermore, ALD technology is used to form a high-density, high-conformity second corrosion-resistant coating on the inner wall of the through-hole and the surface of the first corrosion-resistant coating, thereby enhancing the overall corrosion resistance of the component body.

[0099] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A method for manufacturing a semiconductor component, characterized in that, Includes the following steps: A component body is provided, which includes a surface to be treated, the surface to be treated being in contact with a plasma environment; A first corrosion-resistant coating is formed on the surface to be treated; Drilling process to form a through hole that penetrates the first corrosion-resistant coating and the component body; A second corrosion-resistant coating is formed on the inner wall of the through hole and on the surface of the first corrosion-resistant coating.

2. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The method for forming the second corrosion-resistant coating includes: atomic layer deposition process.

3. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The second corrosion-resistant coating includes a yttrium oxide layer.

4. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The method for forming the first corrosion-resistant coating includes either physical vapor deposition or aerosol deposition.

5. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The first corrosion-resistant coating includes at least one of an alumina layer, a yttrium aluminum garnet layer, a yttrium oxide layer, or a yttrium fluoride oxyfluoride layer.

6. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, It also includes forming a buffer layer; After the drilling process and before the formation of the second corrosion-resistant coating, a buffer layer is formed on the inner wall of the through hole and on the surface of the first corrosion-resistant coating; then the second corrosion-resistant coating is formed on the surface of the buffer layer.

7. The method for manufacturing a semiconductor component as described in claim 6, characterized in that, The method for forming the buffer layer includes: atomic layer deposition process.

8. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The drilling direction of the drilling process is from the first corrosion-resistant coating to the component body.

9. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The drilling process is achieved using ultrasonic-assisted drilling technology.

10. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The apex of the through hole at one end of the first corrosion-resistant coating is set with a 90° rounded corner.

11. The method for manufacturing a semiconductor component as described in claim 10, characterized in that, The radius of the fillet is 0.3mm-0.6mm.

12. The method for manufacturing a semiconductor component as described in claim 1, characterized in that, The through hole has a high aspect ratio of 10:1 to 40:

1.

13. A semiconductor component, characterized in that, include: The component body, which includes the surface to be processed; A first corrosion-resistant coating is applied to the surface to be treated. A through hole that penetrates the first corrosion-resistant coating and the component body; A second corrosion-resistant coating covers at least the inner wall of the through-hole and the surface of the first corrosion-resistant coating.

14. The semiconductor component as claimed in claim 13, characterized in that, The second corrosion-resistant coating is an atomic layer deposition coating, the material of which includes yttrium oxide, a thickness of 0.5μm-1μm, and a surface porosity of 0%.

15. The semiconductor component as claimed in claim 13, characterized in that, The first corrosion-resistant coating is a physical vapor deposition coating or an aerosol deposition coating, and its material includes at least one of alumina, yttrium aluminum garnet, yttrium oxide or yttrium oxyfluoride, with a thickness of 10μm-30μm.

16. The semiconductor component as claimed in claim 13, characterized in that, Also includes: A buffer layer is located at least between the inner wall of the through hole and the second corrosion-resistant coating, and between the first corrosion-resistant coating and the second corrosion-resistant coating.

17. The semiconductor component as claimed in claim 16, characterized in that, The buffer layer is an atomic layer deposition coating, and its material includes at least one of the following: an alumina layer, a yttrium aluminum garnet layer, a yttrium oxide layer, or a yttrium fluoride oxyfluoride layer, with a thickness of 0.5 μm-1 μm and a surface porosity of 0%.

18. The semiconductor component as claimed in claim 13, characterized in that, The semiconductor component includes any one of the following: a gas spray head, a plasma confinement ring, or an electrostatic chuck.

19. The semiconductor component as claimed in claim 18, characterized in that, The semiconductor component is a gas spray head, and the inner diameter of the through hole is 0.3mm-1mm.

20. A semiconductor device, characterized in that, The semiconductor device comprises the semiconductor component as described in any one of claims 13-19.

Images