Semiconductor die with vertical transistor device
By setting the drain region of the additional transistor device on the first side of the semiconductor body and connecting it with vertical contact elements, combined with electrical isolation technology, the integration problem of the vertical transistor device and the additional transistor device is solved, the reusability and integration of manufacturing steps are improved, and wiring and connection are simplified.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-27
- Publication Date
- 2026-03-27
AI Technical Summary
In the existing technology, it is difficult to effectively integrate additional transistor devices with vertical transistor devices during the manufacturing process of vertical transistor devices, resulting in insufficient repeatability and integration of manufacturing steps.
The drain region of an additional transistor device is provided on the first side of the semiconductor body and connected to the first side of the semiconductor body by a vertical contact element. Combined with electrical isolation technology, the vertical transistor device and the additional transistor device are isolated in the lateral direction to realize vertical current flow and reuse the manufacturing steps.
It enables efficient integration of vertical transistor devices with additional transistor devices, improves the reusability and integration of manufacturing steps, and provides source and drain contacts on the same side, simplifying wiring and connections.
Smart Images
Figure CN121751744A_ABST