Hf / Pt / Hf / YSZ multi-layer thin film with high-temperature resistance stability and preparation method of Hf / Pt / Hf / YSZ multi-layer thin film

Abstract

The invention relates to the technical field of platinum-based thin films, in particular to an Hf / Pt / Hf / YSZ multi-layer thin film with high-temperature resistance stability and a preparation method of the Hf / Pt / Hf / YSZ multi-layer thin film. The invention provides an Hf / Pt / Hf / YSZ multi-layer thin film with high-temperature resistance stability performance. The Hf / Pt / Hf / YSZ multi-layer thin film comprises a YSZ transition layer, an Hf strengthening layer, a Pt resistance layer and an Hf protection layer which are sequentially stacked on a silicon nitride substrate from bottom to top. The Hf / Pt / Hf / YSZ multilayer thin film has excellent high-temperature resistance stability.

Description

Technical Field

[0001] This invention relates to the field of platinum-based thin film technology, and in particular to a Hf / Pt / Hf / YSZ multilayer thin film with high-temperature electrical stability and its preparation method. Background Technology

[0002] Platinum-based thin films possess advantages such as stable temperature coefficient of resistance, good thermal response, ability to withstand high current densities, high melting point, and oxidation resistance, making them widely used in microelectromechanical systems (MEMS) such as microheaters and microsensors. However, with the widespread application of MEMS in industrial production and aerospace, the stability of platinum-based thin films in extreme environments (such as vacuum and high temperatures) has become a major concern. At high temperatures, platinum films are prone to various structural defects such as pores, grain coarsening, and mound formation, further affecting their overall thermal stability. Furthermore, due to the chemical inertness of platinum (Pt), it exhibits poor adhesion to most commonly used substrate materials (such as silicon, silicon nitride, and silicon dioxide), resulting in high surface tension and a tendency for film peeling.

[0003] Currently, a metal is typically introduced between the Pt thin film and the substrate material as a transition layer or adhesion layer. These transition layers (such as titanium or tantalum) improve the adhesion strength between the Pt thin film and the substrate material, effectively suppressing defects such as hillocks and cracks in the platinum film caused by thermal stress. However, at high temperatures, these transition layers oxidize and diffuse between themselves and the platinum film, affecting the stability of the platinum film at high temperatures. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a Hf / Pt / Hf / YSZ multilayer thin film with high temperature resistance stability and a method for preparing the same, wherein the Hf / Pt / Hf / YSZ multilayer thin film has excellent high temperature resistance stability.

[0005] To achieve the above-mentioned objectives, the present invention provides the following technical solution: The present invention provides a multilayer Hf / Pt / Hf / YSZ film with high temperature resistance stability, comprising, from bottom to top, a YSZ transition layer, an Hf reinforcement layer, a Pt resistance layer and an Hf protection layer sequentially stacked on a silicon nitride substrate.

[0006] Preferably, the thickness of the YSZ transition layer is 20~40nm.

[0007] Preferably, the thickness of the Hf reinforcement layer is 60~65nm.

[0008] Preferably, the thickness of the Pt resistive layer is 250 nm; The thickness of the Hf protective layer is 30~35nm.

[0009] This invention also provides a method for preparing the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature electrical resistance stability as described in the above technical solution, comprising the following steps: A YSZ transition layer, an Hf reinforcement layer, a Pt resistive layer, and an Hf protective layer are sequentially deposited on a silicon nitride substrate to obtain the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature resistive stability.

[0010] Preferably, the method for depositing the YSZ transition layer is magnetron sputtering physical vapor deposition, with the following conditions: argon gas flow rate of 39~41 sccm, argon plasma working pressure of 0.6~0.8 Pa, deposition temperature of 120~160℃, deposition time of 11~13 min, and sputtering power of YSZ target of 190~210 W.

[0011] Preferably, the method for depositing the Hf reinforcement layer is magnetron sputtering physical vapor deposition, with the following conditions: argon gas flow rate of 39~41 sccm, argon plasma working pressure of 0.6~0.8 Pa, deposition temperature of 120~160℃, deposition time of 6~7 min, and sputtering power of Hf target of 200~220 W.

[0012] Preferably, the method for depositing the Pt resistive layer is magnetron sputtering physical vapor deposition, with the following conditions: argon gas flow rate of 39~41 sccm, argon plasma working pressure of 0.6~0.8 Pa, deposition temperature of 120~160℃, deposition time of 32~33 min, and sputtering power of Pt target of 125~135 W.

[0013] Preferably, the method for depositing the Hf protective layer is magnetron sputtering physical vapor deposition, with the following conditions: argon gas flow rate of 39~41 sccm, argon plasma working pressure of 0.6~0.8 Pa, deposition temperature of 120~160℃, deposition time of 3~4 min, and sputtering power of Hf target of 200~220 W.

[0014] This invention also provides the application of the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature resistivity stability described in the above technical solution or the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature resistivity stability prepared by the preparation method described in the above technical solution in the fields of high-temperature sensors, high-temperature stable electrodes and high-temperature MEMS devices.

[0015] This invention provides a high-temperature resistivity stable Hf / Pt / Hf / YSZ multilayer thin film, comprising, from bottom to top, a YSZ transition layer, an Hf reinforcement layer, a Pt resistive layer, and an Hf protective layer sequentially stacked on a silicon nitride substrate. The YSZ transition layer primarily serves the following functions: First, the O atoms in the YSZ layer can form a certain chemical bond with the active Si atoms on the silicon nitride surface, improving the bonding strength. Second, the wettability of the metal film (Hf reinforcement layer) on YSZ is generally better than on silicon nitride, which helps to form a denser and more continuous metal film (Hf reinforcement layer). Finally, in high-temperature applications, YSZ can effectively prevent the diffusion of Si, N, and other atoms from the substrate to the metal film (Hf reinforcement layer), and also prevent the diffusion of metal atoms (Hf) to the substrate, maintaining the integrity of the metal film. The Hf reinforcement layer has the following main functions: First, Hf blocks the diffusion of O from the YSZ layer to the Pt layer. The Hf reinforcement layer itself can combine with O in the YSZ layer, forming a layer of HfO2 at the Hf-YSZ interface, further enhancing the bonding force. Furthermore, at high temperatures, Hf atoms in the Hf reinforcement layer diffuse into the Pt layer. These diffused Hf atoms fill the grain boundaries in the Pt layer, inhibiting the growth of Pt grains at high temperatures, thus suppressing Pt layer aggregation and improving its stability. The Pt resistive layer has advantages such as a stable temperature coefficient of resistance, good thermal response, and high melting point, and is often used as the working resistive layer. The Hf protective layer has the following main functions: First, the Hf protective layer can naturally oxidize on the surface to form a thin oxide layer, which can prevent gas molecules in the air from entering the film. Furthermore, the Hf protective layer can transform the original surface Pt layer into an interfacial Pt layer, reducing its surface free energy. This effectively inhibits the promoting effect of free energy on Pt layer aggregation and improves the stability of the Pt layer. Finally, at high temperatures, Hf atoms in the Hf protective layer will diffuse into the Pt layer, further filling the grain boundaries in the Pt layer, further suppressing the aggregation of the Pt layer and improving its stability. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the HPHY thin film with high-temperature resistance stability prepared in Example 1; Figure 2 The XRD patterns of the HPHY film described in Example 1 after vacuum annealing at temperatures of 773K, 973K, 1173K, and 1273K, respectively; Figure 3 This is a TEM cross-sectional view of the HPHY thin film described in Example 1; Figure 4 The image shows a cross-sectional TEM image of the HPHY film described in Example 1 after annealing at 1173K for 30 minutes. Figure 5The image shows a cross-sectional TEM image of the HPHY film described in Example 1 after annealing at 1273K for 60 min. Figure 6 The resistivity of the HPHY thin film described in Example 1 varies with annealing temperature. Detailed Implementation

[0017] The present invention provides a multilayer Hf / Pt / Hf / YSZ film with high temperature resistance stability, comprising, from bottom to top, a YSZ transition layer, an Hf reinforcement layer, a Pt resistance layer and an Hf protection layer sequentially stacked on a silicon nitride substrate.

[0018] In this invention, the thickness of the YSZ transition layer is preferably 20-40 nm, more preferably 20 nm, 25 nm, 30 nm, 35 nm, or 40 nm. In an embodiment of this invention, the thickness of the YSZ transition layer can be 20 nm.

[0019] In this invention, the material of the YSZ transition layer is preferably yttrium-stabilized zirconium oxide; the doping amount of yttrium oxide in the yttrium-stabilized zirconium oxide is preferably 6-8 mol%, more preferably 6 mol%, 7 mol%, or 8 mol%. In an embodiment of this invention, the doping amount of yttrium oxide in the yttrium-stabilized zirconium oxide is specifically 6 mol%.

[0020] In this invention, the thickness of the Hf reinforcement layer is preferably 60-65 nm, more preferably 60 nm, 61 nm, 62 nm, 63 nm, 64 nm, or 65 nm. In an embodiment of this invention, the thickness of the Hf reinforcement layer can be 65 nm. In this invention, the material of the Hf reinforcement layer is Hf.

[0021] In this invention, the thickness of the Pt resistive layer is preferably 250 nm. In an embodiment of this invention, the thickness of the Pt resistive layer can be 250 nm. In this invention, the material of the Pt resistive layer is Pt.

[0022] In this invention, the thickness of the Hf protective layer is preferably 30-35 nm, more preferably 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, or 35 nm. In an embodiment of this invention, the thickness of the Hf protective layer can be 35 nm. In this invention, the material of the Hf protective layer is Hf.

[0023] This invention also provides a method for preparing the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature electrical resistance stability as described in the above technical solution, comprising the following steps: A YSZ transition layer, an Hf reinforcement layer, a Pt resistive layer, and an Hf protective layer are sequentially deposited on a silicon nitride substrate to obtain the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature resistive stability.

[0024] In this invention, unless otherwise specified, all preparation of raw materials shall be carried out using processes well known to those skilled in the art.

[0025] Before the deposition, the present invention preferably includes argon plasma etching of the silicon nitride substrate; the bias voltage of the argon plasma etching is preferably -450~-550V, more preferably -450V, -500V or -550V; in an embodiment of the present invention, the bias voltage of the argon plasma etching can be -500V; the argon plasma etching time is preferably 5~15min, more preferably 5min, 10min or 15min; in an embodiment of the present invention, the argon plasma etching time can be 10min. In the present invention, the function of the argon plasma etching is to remove the natural oxide layer and impurity contamination layer on the substrate surface.

[0026] In this invention, the deposition method is preferably magnetron sputtering physical vapor deposition.

[0027] In this invention, the purity of the YSZ target used for depositing the YSZ transition layer is preferably 99.99%.

[0028] In this invention, the preferred conditions for depositing the YSZ transition layer are: the argon gas flow rate is preferably 39~41 sccm, more preferably 39 sccm, 40 sccm or 41 sccm; the argon plasma working pressure is preferably 0.6~0.8 Pa, more preferably 0.6 Pa, 0.65 Pa, 0.7 Pa, 0.75 Pa or 0.8 Pa; the deposition temperature is preferably 120~160℃, more preferably 120℃, 130℃, 140℃, 150℃ or 160℃; the deposition time is preferably 11~13 min, more preferably 11 min, 12 min or 13 min; and the sputtering power of the YSZ target is preferably 190~210 W, more preferably 190 W, 195 W, 200 W, 205 W or 210 W. In an embodiment of the present invention, the conditions for depositing the YSZ transition layer are as follows: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, sputtering power of YSZ target of 200 W, and deposition time of 12 min.

[0029] In this invention, the purity of the Hf target used for depositing the Hf reinforcement layer is preferably 99.99%.

[0030] In this invention, the preferred conditions for depositing the Hf reinforcement layer are: the argon gas flow rate is preferably 39~41 sccm, more preferably 39 sccm, 40 sccm or 41 sccm; the argon plasma working pressure is preferably 0.6~0.8 Pa, more preferably 0.6 Pa, 0.65 Pa, 0.7 Pa, 0.75 Pa or 0.8 Pa; the deposition temperature is preferably 120~160℃, more preferably 120℃, 130℃, 140℃, 150℃ or 160℃; the deposition time is preferably 6~7 min, more preferably 6 min or 7 min; and the sputtering power of the Hf target is preferably 200~220 W, more preferably 200 W, 205 W, 210 W, 215 W or 220 W. In an embodiment of the present invention, the conditions for depositing the Hf reinforcement layer are as follows: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, sputtering power of Hf target of 210 W, and deposition time of 6.5 min.

[0031] In this invention, the purity of the Pt target used for depositing the Pt resistive layer is preferably 99.99%.

[0032] In this invention, the preferred conditions for depositing the Pt resistive layer are: the argon gas flow rate is preferably 39~41 sccm, more preferably 39 sccm, 40 sccm or 41 sccm; the argon plasma working pressure is preferably 0.6~0.8 Pa, more preferably 0.6 Pa, 0.65 Pa, 0.7 Pa, 0.75 Pa or 0.8 Pa; the deposition temperature is preferably 120~160℃, more preferably 120℃, 130℃, 140℃, 150℃ or 160℃; the deposition time is preferably 32~33 min, more preferably 32 min, 32.5 min or 33 min; and the sputtering power of the Pt target is preferably 125~135 W, more preferably 125 W, 126 W, 127 W, 128 W, 129 W, 130 W, 131 W, 132 W, 133 W, 134 W or 135 W. In an embodiment of the present invention, the conditions for depositing the Pt resistive layer are as follows: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, sputtering power of Pt target of 130 W, and deposition time of 32.5 min.

[0033] In this invention, the preferred conditions for depositing the Hf protective layer are: an argon gas flow rate of 39-41 sccm, more preferably 39 sccm, 40 sccm, or 41 sccm; an argon plasma working pressure of 0.6-0.8 Pa, more preferably 0.6 Pa, 0.65 Pa, 0.7 Pa, 0.75 Pa, or 0.8 Pa; a deposition temperature of 120-160°C, more preferably 120°C, 130°C, 140°C, 150°C, or 160°C; a deposition time of 3-4 min, more preferably 3 min, 3.5 min, or 7 min; and a sputtering power of 200-220 W for the Hf target, more preferably 200 W, 205 W, 210 W, 215 W, or 220 W. In an embodiment of the present invention, the conditions for depositing the Hf protective layer are as follows: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, sputtering power of Hf target of 210 W, and deposition time of 3.5 min.

[0034] This invention also provides applications of the Hf / Pt / Hf / YSZ multilayer thin films with high-temperature resistivity stability described in the above-described technical solutions, or the Hf / Pt / Hf / YSZ multilayer thin films with high-temperature resistivity stability prepared by the preparation methods described in the above-described technical solutions, in the fields of high-temperature sensors, high-temperature stable electrodes, and high-temperature MEMS devices. This invention does not impose any special limitations on the methods used for these applications; methods well-known to those skilled in the art can be employed.

[0035] The technical solutions of this invention will be clearly and completely described below with reference to the embodiments thereof. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0036] Example 1 The physical vapor deposition (PVD) apparatus consists of three independent controllable magnetron sputtering sources, each mounted with a YSZ target (6 mol% yttrium oxide doping), an Hf target, and a Pt target; the purity of the YSZ, Hf, and Pt targets is 99.99%, and the diameter of each target is approximately 75 mm. Before depositing the thin film, the Si3N4 substrate is etched with argon plasma at a bias voltage of -500 V for 10 min to remove the natural oxide layer and contaminant layer on the substrate surface. A YSZ transition layer (20 nm thick) was deposited on the surface of a Si3N4 substrate under the following conditions: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, sputtering power of YSZ target of 200 W, and deposition time of 12 min. An Hf reinforcement layer (65 nm thick) was deposited on the surface of the YSZ transition layer under the following conditions: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, sputtering power of Hf target of 210 W, and deposition time of 6.5 min. A Pt resistive layer (250 nm thick) was deposited on the surface of the Hf strengthening layer. The deposition conditions were: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, sputtering power of Pt target of 130 W, and deposition time of 32.5 min. A 35 nm thick Hf protective layer was deposited on the surface of the Pt resistive layer. The deposition conditions were: argon gas flow rate of 40 sccm, argon plasma working pressure of 0.7 Pa, deposition temperature of 150 °C, Hf target sputtering power of 210 W, deposition time of 3.5 min, and the thickness of the Hf protective layer was 35 nm. Finally, a 370 nm thick HPHY thin film was formed on the surface of the Si3N4 substrate (e.g., ...). Figure 1 As shown, the layers are arranged sequentially as follows: YSZ layer, Hf reinforcement layer, Pt resistive layer, and Hf protective layer. The HPHY film was placed in a quartz tube and subjected to a 1×10⁻⁶ molten metal. -4 Under vacuum conditions of Pa, the furnace was vacuum annealed at temperatures of 773 K, 973 K, 1173 K, and 1273 K at a heating rate of 10 K / min for 30 minutes, and then vacuum annealed at 1273 K at a heating rate of 10 K / min for 60 minutes, followed by furnace cooling to room temperature. XRD analysis was then performed. Figure 2 The images show the XRD patterns of the HPHY thin film after vacuum annealing at temperatures of 773 K, 973 K, 1173 K, and 1273 K, respectively. Figure 2 It can be seen that the HPHY film is a polycrystalline structure. As the vacuum annealing temperature increases, the Hf layer diffuses into the Pt layer, and the Pt grains gradually grow. After annealing at 973K and above, the Hf layer diffuses into the Pt layer and forms a stable Pt3Hf alloy structure. Figure 3The images shown are TEM cross-sectional views of the HPHY thin film, where (a) is a STEM image of the entire cross-section of the film, (b) is a magnified view of region ⓑ in (a), (c) is a magnified view of region ⓒ in (a), (d) is a Pt atomic arrangement diagram, and (e) is a magnified view of region ⓓ in (a). Figure 3 It can be seen that the HPHY thin film consists of a 35nm surface Hf protective layer, a 250nm Pt functional layer, a 65nm intermediate Hf strengthening layer, and a 20nm YSZ transition layer from top to bottom; long-range ordered atomic arrangement is observed in the columnar structure of the Pt layer, and the Pt layer forms a polycrystalline structure with good crystallinity. Figure 4 The images shown are cross-sectional TEM images of the HPHY thin film after annealing at 1173 K for 30 min. (a) is a STEM image of the entire cross-section of the film; (b) is a magnified view of region ⓑ in (a); (c) is a magnified view of region ⓒ in (a); (d) is a magnified view of region ⓓ in (a); (e) is a magnified view of region ⓔ in (a); (f) is a Pt atomic arrangement diagram; (g) is a magnified view of region ⓖ in (a); (h) is a magnified view of region ⓗ in (a); (i) is a Pt elemental distribution diagram; (j) is an Hf elemental distribution diagram; (k) is a Pt atomic arrangement diagram; (l) is an atomic-level Pt elemental distribution diagram; and (m) is an atomic-level Hf elemental distribution diagram. Figure 4 It can be seen that after annealing, the HPHY film formed a continuous crystal structure in the original amorphous region, and the formed crystals also showed obvious growth, which is consistent with the XRD results. At the interface between the Hf layer and the Pt layer, only a small part of the amorphous region was observed, with a thickness of about 2 nm. The majority of the region consisted of lattice distortion regions of a certain thickness. Pt retained a good layered structure, while Hf, in addition to retaining two good layered structures, also showed a uniform Hf signal detected within the Pt layer, indicating that Hf diffused uniformly into the Pt layer, and that the Hf diffused into the Pt layer formed a Pt3Hf alloy with Pt. At the same time, many large grains accompanied by small grains were observed in the Pt layer, indicating that grain growth and recrystallization occurred in the Pt layer after annealing. Some Pt ​​particles were observed at the interface between the Pt layer and the Hf reinforcement layer, indicating that Pt and Hf interdiffused. Figure 5The images shown are cross-sectional TEM images of the HPHY thin film after annealing at 1273 K for 60 min. (a) is a STEM image of the entire cross-section of the film; (b) is a magnified view of region ⓑ in (a); (c) is a magnified view of region ⓒ in (a); (d) is a magnified view of region ⓓ in (a); (e) is a magnified view of region ⓔ in (a); (f) is a Pt atomic arrangement diagram; (g) is a magnified view of region ⓖ in (a); (h) is a magnified view of region ⓗ in (a); (i) is a Pt elemental distribution diagram; (j) is an Hf elemental distribution diagram; (k) is a Pt atomic arrangement diagram; (l) is an atomic-level Pt elemental distribution diagram; and (m) is an atomic-level Hf elemental distribution diagram. Figure 5 It can be seen that the HPHY film, after annealing, still retains the structure from top to bottom as an Hf layer, a Pt layer, an Hf layer, and a YSZ layer, indicating that this multilayer structure has good stability at 1000℃. Numerous black amorphous regions can be observed at the interface, which may be HfO formed by the partial decomposition of the Pt3Hf alloy within the Pt layer at high temperatures and its combination with O within the Hf layer. 2-x Unlike after annealing at 1173K, large columnar structures penetrating the Pt layer were re-observed in the Pt layer, indicating that the recrystallization process was essentially complete. Long-range ordered atomic arrangements were observed in these columnar structures, and distinct grain boundaries were visible between them. O in the YSZ layer diffused into the intermediate Hf reinforcement layer at high temperatures, combining with the decomposed Pt3Hf at the interface to form a black amorphous region. Black amorphous regions were also observed within the intermediate Hf reinforcement layer, and diffusion was also clearly observed at the interface between the Hf reinforcement layer and the YSZ transition layer, further indicating that oxygen in the YSZ layer diffused into the Hf layer at high temperatures and formed oxides. Despite the interfacial diffusion at high temperatures, the film still maintained a complete multilayer structure. Figure 6 This is a graph showing the resistivity change of the HPHY thin film as a function of annealing temperature. Figure 6It can be seen that the resistivity of the HPHY film does not change much before and after annealing, exhibiting good stability. Before annealing, the resistivity of the HPHY film is 22.6 μΩ·cm. After annealing at 773 K, the resistivity slightly increases to 26.60 μΩ·cm, mainly due to diffusion between the Hf and Pt layers, increasing the interface resistance. After annealing at 973 K, the resistivity slightly decreases to 21.27 μΩ·cm because the Hf diffused into the Pt layer forms a Pt3Hf alloy with Pt, reducing defects within the Pt layer. After annealing at 1173 K, the resistivity further decreases to 20.47 μΩ·cm, due to recrystallization further reducing defects within the film. After annealing at 1273 K for 30 min, the resistivity slightly increases again to 23.94 μΩ·cm because the Pt3Hf alloy partially decomposes at high temperature, forming some oxides, increasing defects within the film. However, the resistivity after annealing at 1273K for 60 minutes is basically the same as that after 30 minutes, which is due to the good stability of the Pt3Hf alloy formed by Pt and Hf at high temperatures.

[0037] In summary, the HPHY thin film described in this invention is a vacuum-resistant high-temperature resistive thin film with low thermal diffusivity and stable electrical properties under vacuum and high-temperature conditions.

[0038] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A multilayer Hf / Pt / Hf / YSZ film with high-temperature electrical resistance stability, characterized in that, From bottom to top, it includes a YSZ transition layer, an Hf reinforcement layer, a Pt resistance layer, and an Hf protective layer sequentially stacked on a silicon nitride substrate.

2. The thin film with high-temperature resistance stability as described in claim 1, characterized in that, The thickness of the YSZ transition layer is 20~40nm.

3. The thin film with high-temperature resistance stability as described in claim 1, characterized in that, The thickness of the Hf reinforcement layer is 60~65nm.

4. The thin film with high-temperature resistance stability as described in claim 1, characterized in that, The thickness of the Pt resistive layer is 250 nm; The thickness of the Hf protective layer is 30~35nm.

5. The method for preparing the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature electrical resistance stability as described in any one of claims 1 to 4, characterized in that, Includes the following steps: A YSZ transition layer, an Hf reinforcement layer, a Pt resistive layer, and an Hf protective layer are sequentially deposited on a silicon nitride substrate to obtain the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature resistive stability.

6. The preparation method according to claim 5, characterized in that, The YSZ transition layer was deposited by magnetron sputtering physical vapor deposition under the following conditions: argon gas flow rate of 39-41 sccm, argon plasma working pressure of 0.6-0.8 Pa, deposition temperature of 120-160℃, deposition time of 11-13 min, and sputtering power of YSZ target of 190-210 W.

7. The preparation method according to claim 5, characterized in that, The method for depositing the Hf reinforcement layer is magnetron sputtering physical vapor deposition, with the following conditions: argon gas flow rate of 39~41 sccm, argon plasma working pressure of 0.6~0.8 Pa, deposition temperature of 120~160℃, deposition time of 6~7 min, and sputtering power of Hf target of 200~220 W.

8. The method as described in claim 5, characterized in that, The method for depositing the Pt resistive layer is magnetron sputtering physical vapor deposition, with the following conditions: argon gas flow rate of 39~41 sccm, argon plasma working pressure of 0.6~0.8 Pa, deposition temperature of 120~160℃, deposition time of 32~33 min, and sputtering power of Pt target of 125~135 W.

9. The method as described in claim 5, characterized in that, The method for depositing the Hf protective layer is magnetron sputtering physical vapor deposition, with the following conditions: argon gas flow rate of 39~41 sccm, argon plasma working pressure of 0.6~0.8 Pa, deposition temperature of 120~160℃, deposition time of 3~4 min, and sputtering power of Hf target of 200~220 W.

10. The application of the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature resistivity as described in any one of claims 1 to 4, or the Hf / Pt / Hf / YSZ multilayer thin film with high-temperature resistivity prepared by the preparation method described in any one of claims 5 to 9, in the fields of high-temperature sensors, high-temperature stable electrodes, and high-temperature MEMS devices.

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