GaN MOSFET junction temperature measurement method and device, electronic equipment and storage medium

Abstract

The invention discloses a GaN MOSFET junction temperature measuring method and device, electronic equipment and a storage medium, and belongs to the technical field of semiconductor device tests.The method comprises the steps that drain-source conduction impedance of a GaN MOSFET is calculated according to drain-source conduction current and drain-source conduction voltage drop of the GaN MOSFET, and a first temperature corresponding to the drain-source conduction impedance is matched; according to the rising time of the drain-source voltage, the falling time of the drain-source voltage, the rising time of the gate-source voltage and the falling time of the gate-source voltage, the turn-on time and the turn-off time of the GaN MOSFET are calculated, and a second temperature corresponding to the turn-on time and the turn-off time is obtained through matching; according to the surface temperature, the first temperature and the second temperature, the junction temperature of the GaN MOSFET is calculated, and therefore the problem that in the prior art, junction temperature data obtained through a single thermocouple measuring method is large in error can be solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device testing technology, and in particular to a method, apparatus, electronic device, and storage medium for measuring the junction temperature of a GaN MOSFET. Background Technology

[0002] As a third-generation semiconductor device, GaN devices offer advantages such as high power density, high failure temperature, and high efficiency. However, high power density leads to a sharp increase in temperature under abnormal modes. Furthermore, the electron mobility of GaN devices decreases significantly at high temperatures, causing a rapid rise in on-resistance RDS(on), further increasing losses and heat generation, creating a positive feedback loop, and potentially leading to thermal runaway. The gate structure of GaN devices is more temperature-sensitive than traditional silicon-based devices; high temperatures can trigger threshold voltage drift or gate degradation, exacerbating the risk of device failure. Compared to silicon-based materials, GaN materials have higher power density and are more prone to thermal runaway. Therefore, it is necessary to measure and monitor the junction temperature of GaN MOSFET devices to protect them.

[0003] Currently, most GaN MOSFETs use thermocouples to measure the junction temperature, placing the thermocouple on the surface of the GaN MOSFET to measure the junction temperature. However, due to factors such as the uneven temperature distribution in the GaN MOSFET space and the ease with which the thermocouple can detach, the junction temperature data obtained by the traditional single thermocouple measurement method has a large error, making it difficult to achieve accurate protection for GaN MOSFET devices. Summary of the Invention

[0004] This invention provides a method, apparatus, electronic device, and storage medium for measuring the junction temperature of GaN MOSFETs, which can solve the problem that the junction temperature data obtained by the traditional single thermocouple measurement method has large errors and is difficult to achieve accurate protection of GaN MOSFET devices.

[0005] To address the aforementioned technical problems, embodiments of the present invention provide a method for measuring the junction temperature of a GaN MOSFET, comprising: The drain-source on-state current, drain-source on-state voltage drop, drain-source voltage rise time, drain-source voltage fall time, gate-source voltage rise time, gate-source voltage fall time, and surface temperature of the GaN MOSFET are obtained; wherein the surface temperature is measured by a thermocouple disposed on the surface of the GaN MOSFET. Based on the drain-source on-current and the drain-source on-voltage drop, the drain-source on-resistance of the GaN MOSFET is calculated, and then a first temperature corresponding to the drain-source on-resistance is obtained by matching it in a preset temperature change table. Based on the rise time of the drain-source voltage, the fall time of the drain-source voltage, the rise time of the gate-source voltage, and the fall time of the gate-source voltage, the turn-on time and turn-off time of the GaN MOSFET are calculated, and then a second temperature corresponding to the turn-on time and turn-off time is obtained by matching the temperature change table. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0006] As a preferred embodiment, the step of calculating the junction temperature of the GaN MOSFET based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature includes: Acquire several historical sampling data of the GaN MOSFET; wherein, the historical sampling data includes: historical surface temperature, historical first temperature and historical second temperature; Based on the historical surface temperature, the first historical temperature, and the second historical temperature, the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first historical temperature, and the cumulative error corresponding to the second historical temperature are calculated. Based on the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first historical temperature, and the cumulative error corresponding to the second historical temperature, the weights corresponding to the surface temperature, the first temperature, and the second temperature are calculated. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0007] As a preferred method, the junction temperature of the GaN MOSFET is calculated using the following formula: ; ; ; in, Let i be the cumulative error of temperature i from the mth to the (m+1000th)th sampling point, where i = 1, 2, 3, representing the first temperature, the second temperature, and the surface temperature, respectively. , ..., Let i be the temperature value at the m-th, ..., m+1000th sampling point of temperature i; Let i be the average temperature of temperature i over the range from the mth to the (m+1000th)th sampling point; Let i be the weight of temperature i at the (m+1001)th sampling point; This represents the junction temperature of the GaN MOSFET at the (m+1001)th sampling point.

[0008] As a preferred approach, the drain-source on-resistance of the GaN MOSFET is calculated using the following formula: ; in, This is the drain-source on-resistance; This is the drain-source conduction current; This is the drain-source conduction voltage drop; The on-time and off-time of a GaN MOSFET can be calculated using the following formula: ; in, For conduction time; This refers to the shutdown time; The rise time of the drain-source voltage; The fall time of the drain-source voltage; The rise time of the gate-source voltage; This represents the fall time of the gate-source voltage.

[0009] Based on the above embodiments, another embodiment of the present invention provides a GaN MOSFET junction temperature measurement device, including: a data acquisition module, a first temperature matching module, a second temperature matching module, and a junction temperature calculation module; The data acquisition module is used to acquire the drain-source on-state current, drain-source on-state voltage drop, drain-source voltage rise time, drain-source voltage fall time, gate-source voltage rise time, gate-source voltage fall time, and surface temperature of the GaN MOSFET; wherein, the surface temperature is measured by a thermocouple disposed on the surface of the GaN MOSFET. The first temperature matching module is used to calculate the drain-source on-resistance of the GaN MOSFET based on the drain-source on-current and the drain-source on-voltage drop, and then match the first temperature corresponding to the drain-source on-resistance in a preset temperature change table. The second temperature matching module is used to calculate the turn-on time and turn-off time of the GaN MOSFET based on the rise time of the drain-source voltage, the fall time of the drain-source voltage, the rise time of the gate-source voltage, and the fall time of the gate-source voltage, and then match the second temperature corresponding to the turn-on time and turn-off time in the temperature change table. The junction temperature calculation module is used to calculate the junction temperature of the GaN MOSFET based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0010] As a preferred embodiment, the step of calculating the junction temperature of the GaN MOSFET based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature includes: Acquire several historical sampling data of the GaN MOSFET; wherein, the historical sampling data includes: historical surface temperature, historical first temperature and historical second temperature; Based on the historical surface temperature, the first historical temperature, and the second historical temperature, the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first historical temperature, and the cumulative error corresponding to the second historical temperature are calculated. Based on the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first historical temperature, and the cumulative error corresponding to the second historical temperature, the weights corresponding to the surface temperature, the first temperature, and the second temperature are calculated. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0011] As a preferred method, the junction temperature of the GaN MOSFET is calculated using the following formula: ; ; ; in, Let i be the cumulative error of temperature i from the mth to the (m+1000th)th sampling point, where i = 1, 2, 3, representing the first temperature, the second temperature, and the surface temperature, respectively. , ..., Let i be the temperature value at the m-th, ..., m+1000th sampling point of temperature i; Let i be the average temperature of temperature i over the range from the mth to the (m+1000th)th sampling point; Let i be the weight of temperature i at the (m+1001)th sampling point; This represents the junction temperature of the GaN MOSFET at the (m+1001)th sampling point.

[0012] As a preferred approach, the drain-source on-resistance of the GaN MOSFET is calculated using the following formula: ; in, This is the drain-source on-resistance; This is the drain-source conduction current; This is the drain-source conduction voltage drop; The on-time and off-time of a GaN MOSFET can be calculated using the following formula: ; in, For conduction time; This refers to the shutdown time; The rise time of the drain-source voltage; The fall time of the drain-source voltage; The rise time of the gate-source voltage; This represents the fall time of the gate-source voltage.

[0013] Based on the above embodiments, another embodiment of the present invention provides an electronic device, the device including a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein the processor executes the computer program to implement the GaN MOSFET junction temperature measurement method described in the above embodiments of the invention.

[0014] Based on the above embodiments, another embodiment of the present invention provides a storage medium, the storage medium including a stored computer program, wherein, when the computer program is running, it controls the device where the storage medium is located to execute the GaN MOSFET junction temperature measurement method described in the above embodiments of the invention.

[0015] Compared with the prior art, the embodiments of the present invention have the following beneficial effects: This invention provides a method for measuring the junction temperature of a GaN MOSFET. By measuring the drain-source on-state current, voltage drop, rise / fall times of the drain-source and gate-source, and surface temperature (measured by thermocouples), the on-resistance and on / off time of the GaN MOSFET are calculated. The corresponding temperatures are then matched to a preset temperature table to accurately estimate the junction temperature of the GaN MOSFET. This method enables accurate monitoring of the GaN MOSFET junction temperature, improving the measurement accuracy and reliability of the device temperature.

[0016] In addition to obtaining the surface temperature, this invention also calculates the corresponding first and second temperatures. Based on the temperature results measured from multiple sources, a comprehensive calculation is performed to obtain the final junction temperature. This can overcome the problem of large errors in junction temperature data obtained by a single thermocouple measurement method, improve the accuracy of GaN MOSFET junction temperature data, and achieve precise protection of GaN MOSFET devices. Attached Figure Description

[0017] Figure 1 This is a schematic flowchart of a GaN MOSFET junction temperature measurement method according to an embodiment of the present invention; Figure 2This is a schematic diagram of the GaN MOSFET junction temperature measurement circuit of the present invention; Figure 3 yes and A schematic diagram of the calculation; Figure 4 This is a flowchart of the adaptive weight allocation algorithm of the present invention; Figure 5 This is a schematic diagram of a GaN MOSFET junction temperature measurement device provided in an embodiment of the present invention. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0020] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0021] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0022] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0023] In the description of the embodiments of this application, the terms "multiple" and "several" refer to two or more (including two), similarly, "multiple groups" refer to two or more (including two groups), and "multiple pieces" refer to two or more (including two pieces).

[0024] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0025] Example 1 Please refer to Figure 1 To address the problem that traditional single thermocouple measurement methods in the prior art have large errors in junction temperature data, making it difficult to achieve accurate protection of GaN MOSFET devices, an embodiment of the present invention provides a GaN MOSFET junction temperature measurement method, comprising the following specific steps: S1. Obtain the drain-source on-state current, drain-source on-state voltage drop, drain-source voltage rise time, drain-source voltage fall time, gate-source voltage rise time, gate-source voltage fall time, and surface temperature of the GaN MOSFET; wherein, the surface temperature is measured by a thermocouple disposed on the surface of the GaN MOSFET. For details, please refer to Figure 2 This is a schematic diagram of the GaN MOSFET junction temperature measurement circuit of the present invention. Figure 2 In the middle, the junction temperature measurement circuit consists of a current sampling module (which collects the drain-source conduction current). ), Detection circuit (measuring drain-source forward voltage drop) and drain-source voltage (rise / fall time) Detection circuit (measuring gate-source voltage) The system consists of a rise / fall time calculation module and a response calculation module. When measuring the GaN MOSFET junction temperature, the calculation module acquires the drain-source on-state current collected by the current sampling module. The detection circuit measures the drain-source on-state voltage drop and the rise / fall time of the drain-source voltage. The rise / fall time of the gate-source voltage is measured by the detection circuit, and the junction temperature of the GaN MOSFET is calculated based on this data.

[0026] S2. Calculate the drain-source on-state impedance of the GaN MOSFET based on the drain-source on-state current and the drain-source on-state voltage drop, and then match the first temperature corresponding to the drain-source on-state impedance in a preset temperature change table (the GaN MOSFET datasheet provided by the manufacturer contains a temperature change table, which corresponds to the relationship between drain-source on-state impedance and junction temperature). Specifically, the drain-source on-state current collected by the current sampling module and The drain-source on-state voltage drop collected by the detection circuit The common input calculation module obtains the drain-source on-resistance. According to the calculated Value, query The temperature change table as the temperature changes yields the estimated temperature 1 (i.e., the first temperature).

[0027] It should be noted that estimated temperature 1 (i.e., the first temperature) represents based on The estimated temperature was then compared with the measured temperature. The corresponding temperature change table can be used to directly obtain the relevant information. The corresponding temperature. This will be specified in the MOSFET's datasheet. The curve of temperature change The value increases with increasing temperature; this table needs to be consulted by the operator in accordance with the specifications.

[0028] S3. Based on the rise time of the drain-source voltage, the fall time of the drain-source voltage, the rise time of the gate-source voltage, and the fall time of the gate-source voltage, calculate the turn-on time and turn-off time of the GaN MOSFET, and then match the second temperature corresponding to the turn-on time and turn-off time in the temperature change table. Preferably, the drain-source on-resistance of the GaN MOSFET is calculated according to the following formula: ; in, This is the drain-source on-resistance; This is the drain-source conduction current; This is the drain-source conduction voltage drop; The on-time and off-time of a GaN MOSFET can be calculated using the following formula: ; in, For conduction time; This refers to the shutdown time; The rise time of the drain-source voltage; The fall time of the drain-source voltage; The rise time of the gate-source voltage; This represents the fall time of the gate-source voltage.

[0029] Specifically, The drain-source voltage collected by the detection circuit The rise / fall time and The gate-source voltage collected by the detection circuit The rise and fall times are input together into the calculation module to obtain the conduction time of the GaN MOSFET. and shutdown time The calculated and and , By referring to the temperature change table and comparing it with the temperature change, we can obtain the estimated temperature 2 (i.e., the second temperature).

[0030] Among them, drain-source on-resistance and The calculation formula is shown in the above formula, where, for The moment when the high level drops to 0; for The moment when the level begins to rise from 0; for The moment when the level rises from low to high; for For the moment when the high level begins to fall, please refer to... Figure 3 ,for and A calculation diagram.

[0031] It should be noted that estimated temperature 2 (i.e., the second temperature) represents based on , The estimated temperature was then compared with the measured temperature. , The corresponding temperature change table can be used to directly obtain the relevant information. , The corresponding temperature The corresponding temperature change table and , The corresponding temperature change tables can be summarized into a single overall temperature change table. and It also changes with temperature; the higher the temperature, the longer the conduction time. and shutdown time The longer.

[0032] S4. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0033] Preferably, the step of calculating the junction temperature of the GaN MOSFET based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature includes: acquiring several historical sampling data of the GaN MOSFET; wherein the historical sampling data includes: historical surface temperature, historical first temperature, and historical second temperature; calculating the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the historical first temperature, and the cumulative error corresponding to the historical second temperature based on the historical surface temperature, the historical first temperature, and the historical second temperature; calculating the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature based on the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first temperature, and the cumulative error corresponding to the second temperature; and calculating the junction temperature of the GaN MOSFET based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0034] Preferably, the junction temperature of the GaN MOSFET is calculated according to the following formula: ; ; ; in, Let i be the cumulative error of temperature i from the mth to the (m+1000th)th sampling point, where i = 1, 2, 3, representing the first temperature, the second temperature, and the surface temperature, respectively. , ..., Let i be the temperature value at the m-th, ..., m+1000th sampling point of temperature i; Let i be the average temperature of temperature i over the range from the mth to the (m+1000th)th sampling point; Let i be the weight of temperature i at the (m+1001)th sampling point; This represents the junction temperature of the GaN MOSFET at the (m+1001)th sampling point.

[0035] Specifically, in Figure 2In this process, the thermocouple is directly attached to the surface of the GaN MOSFET. The temperature measurement circuit converts the thermocouple's resistance value into a temperature signal, obtaining the surface temperature of the GaN MOSFET (estimated temperature 3). When measuring the junction temperature of the GaN MOSFET, the surface temperature measured by the thermocouple is simultaneously input into the calculation module. Finally, the temperatures obtained from these three temperature measurement / estimation methods are used to obtain the final measured temperature (junction temperature) of the GaN MOSFET junction through a weighted adaptive allocation algorithm. Please refer to... Figure 4 The flowchart below shows the adaptive weight allocation algorithm of this invention. To ensure a reduction in the computational load of the weight allocation algorithm and to ensure its compatibility with mainstream microcontrollers, this invention proposes a computationally simple adaptive weight allocation algorithm. Figure 4 The specific operations for each process are as follows: (1) Determine the evaluation target: i.e., MOSFET junction temperature; (2) Constructing an evaluation index system: based on Figure 2 The cumulative error within 1000 sampling points for each estimated temperature is used for evaluation. The cumulative error is calculated as follows: ; In the formula, To estimate the cumulative error of temperature i over the m-th to m+1000th sampling points; , ..., To estimate the temperature value at the m-th, ..., m+1000th sampling point of temperature i, To estimate the average temperature of temperature i over the m to m+1000 sampling points.

[0036] (3) Determine the weights: Calculate the weight of each estimated temperature based on the cumulative error, as follows: ; In the formula, This is used to estimate the weight of temperature i at the (m+1001)th sampling point.

[0037] (4) Comprehensive calculation of GaN MOSFET junction temperature: Based on the weight of the estimated temperature i and the temperature value, the junction temperature of the GaN MOSFET is calculated. The calculation method is as follows: ; In the formula, This represents the final calculated junction temperature of the GaN MOSFET at the (m+1001)th sampling point.

[0038] That is, the present invention pre-collects the estimated temperatures (surface temperature, first temperature and second temperature) of 1000 sampling points, determines the weight of each estimated temperature based on the estimated temperatures of the 1000 sampling points, and then calculates the current junction temperature based on the currently collected estimated temperature and the weight of each estimated temperature when it is necessary to calculate the junction temperature.

[0039] Therefore, this invention provides a method for measuring the junction temperature of a GaN MOSFET. In addition to acquiring the surface temperature measured by thermocouples, this invention also acquires the drain-source on-state current, drain-source on-state voltage drop, drain-source voltage rise time, drain-source voltage fall time, gate-source voltage rise time, and gate-source voltage fall time of the GaN MOSFET. Based on these acquired data, the drain-source on-resistance, on-time, and off-time of the GaN MOSFET are calculated. A first temperature corresponding to the drain-source on-resistance and a second temperature corresponding to the on-time and off-time are matched in a preset temperature change table. Finally, the junction temperature of the GaN MOSFET is calculated by comprehensively considering the surface temperature, the first temperature, and the second temperature. Compared to existing technologies that directly use the surface temperature measured by thermocouples as the junction temperature of the GaN MOSFET, this invention, in addition to acquiring the surface temperature, also calculates the corresponding first and second temperatures, and calculates the final junction temperature by comprehensively considering the surface temperature, the first temperature, and the second temperature. This overcomes the problem of large errors in the junction temperature data obtained by the single thermocouple measurement method, improves the accuracy of GaN MOSFET junction temperature data, and achieves precise protection of GaN MOSFET devices. Furthermore, this invention proposes an adaptive allocation method for the estimated temperature weights of GaN MOSFETs, which allocates weights based on the cumulative error to improve the accuracy of temperature measurement.

[0040] Example 2 Please refer to Figure 5 This is a schematic diagram of a GaN MOSFET junction temperature measurement device according to an embodiment of the present invention. The device includes: a data acquisition module, a first temperature matching module, a second temperature matching module, and a junction temperature calculation module. The data acquisition module is used to acquire the drain-source on-state current, drain-source on-state voltage drop, drain-source voltage rise time, drain-source voltage fall time, gate-source voltage rise time, gate-source voltage fall time, and surface temperature of the GaN MOSFET; wherein, the surface temperature is measured by a thermocouple disposed on the surface of the GaN MOSFET. The first temperature matching module is used to calculate the drain-source on-resistance of the GaN MOSFET based on the drain-source on-current and the drain-source on-voltage drop, and then match the first temperature corresponding to the drain-source on-resistance in a preset temperature change table. The second temperature matching module is used to calculate the turn-on time and turn-off time of the GaN MOSFET based on the rise time of the drain-source voltage, the fall time of the drain-source voltage, the rise time of the gate-source voltage, and the fall time of the gate-source voltage, and then match the second temperature corresponding to the turn-on time and turn-off time in the temperature change table. The junction temperature calculation module is used to calculate the junction temperature of the GaN MOSFET based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0041] Preferably, the junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature, including: Acquire several historical sampling data of the GaN MOSFET; wherein, the historical sampling data includes: historical surface temperature, historical first temperature and historical second temperature; The cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the historical first temperature, and the cumulative error corresponding to the historical second temperature are calculated based on the historical surface temperature, the historical first temperature, and the historical second temperature. The weights corresponding to the surface temperature, the first temperature, and the second temperature are calculated based on the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first historical temperature, and the cumulative error corresponding to the second historical temperature. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

[0042] Preferably, the junction temperature of the GaN MOSFET is calculated according to the following formula: ; ; ; in, Let i be the cumulative error of temperature i from the mth to the (m+1000th)th sampling point, where i = 1, 2, 3, representing the first temperature, the second temperature, and the surface temperature, respectively. , ..., Let i be the temperature value at the m-th, ..., m+1000th sampling point of temperature i; Let i be the average temperature of temperature i over the range from the mth to the (m+1000th)th sampling point; Let i be the weight of temperature i at the (m+1001)th sampling point; This represents the junction temperature of the GaN MOSFET at the (m+1001)th sampling point.

[0043] Preferably, the drain-source on-resistance of the GaN MOSFET is calculated according to the following formula: ; in, This is the drain-source on-resistance; This is the drain-source conduction current; This is the drain-source conduction voltage drop; The on-time and off-time of a GaN MOSFET can be calculated using the following formula: ; in, For conduction time; This refers to the shutdown time; The rise time of the drain-source voltage; The fall time of the drain-source voltage; The rise time of the gate-source voltage; This represents the fall time of the gate-source voltage.

[0044] It should be noted that the device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Furthermore, in the accompanying drawings of the device embodiments provided by this invention, the connection relationships between modules indicate that they have communication connections, which can be specifically implemented as one or more communication buses or signal lines. Those skilled in the art can understand and implement this without any creative effort.

[0045] Those skilled in the art will clearly understand that, for convenience and brevity, the specific working process of the device described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0046] Example 3 Accordingly, embodiments of the present invention provide an electronic device, the device including a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein the processor executes the computer program to implement the GaN MOSFET junction temperature measurement method described in the above embodiments of the invention.

[0047] The electronic device may be a desktop computer, laptop, handheld computer, or cloud server, etc. The device may include, but is not limited to, a processor and a memory.

[0048] The processor can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor can be a microprocessor or any conventional processor. The processor is the control center of the device, connecting various parts of the device via various interfaces and lines.

[0049] Example 4 Accordingly, embodiments of the present invention provide a storage medium, the storage medium including a stored computer program, wherein, when the computer program is executed, it controls the device where the storage medium is located to perform the GaN MOSFET junction temperature measurement method described in the above embodiments of the invention.

[0050] The memory can be used to store the computer program. The processor implements various functions of the device by running or executing the computer program stored in the memory and calling data stored in the memory. The memory may mainly include a program storage area and a data storage area. The program storage area may store the operating system, applications required for at least one function, etc.; the data storage area may store data created based on the use of the mobile phone, etc. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as hard disk, RAM, plug-in hard disk, smart media card (SMC), secure digital (SD) card, flash card, at least one disk storage device, flash memory device, or other volatile solid-state storage device.

[0051] The storage medium is a computer-readable storage medium, and the computer program is stored in the computer-readable storage medium. When executed by a processor, the computer program can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable file, or some intermediate form. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording media, USB flash drive, portable hard drive, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium can be appropriately added or removed according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, the computer-readable medium does not include electrical carrier signals and telecommunication signals.

[0052] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A method for measuring the junction temperature of a GaN MOSFET, characterized in that, include: The drain-source on-state current, drain-source on-state voltage drop, drain-source voltage rise time, drain-source voltage fall time, gate-source voltage rise time, gate-source voltage fall time, and surface temperature of the GaN MOSFET are obtained; wherein the surface temperature is measured by a thermocouple disposed on the surface of the GaN MOSFET. The drain-source on-resistance of the GaN MOSFET is calculated based on the drain-source on-current and the drain-source on-voltage drop, and then a first temperature corresponding to the drain-source on-resistance is obtained by matching it in a preset temperature change table. The turn-on and turn-off times of the GaN MOSFET are calculated based on the rise time of the drain-source voltage, the fall time of the drain-source voltage, the rise time of the gate-source voltage, and the fall time of the gate-source voltage. Then, a second temperature corresponding to the turn-on and turn-off times is obtained by matching the temperature change table. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

2. The GaN MOSFET junction temperature measurement method as described in claim 1, characterized in that, The calculation of the GaN MOSFET junction temperature based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature includes: Acquire several historical sampling data of the GaN MOSFET; wherein, the historical sampling data includes: historical surface temperature, historical first temperature and historical second temperature; The cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the historical first temperature, and the cumulative error corresponding to the historical second temperature are calculated based on the historical surface temperature, the historical first temperature, and the historical second temperature. The weights corresponding to the surface temperature, the first temperature, and the second temperature are calculated based on the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first historical temperature, and the cumulative error corresponding to the second historical temperature. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

3. The GaN MOSFET junction temperature measurement method as described in claim 1, characterized in that, The junction temperature of a GaN MOSFET can be calculated using the following formula: ； ； ； in, Let i be the cumulative error of temperature i from the mth to the (m+1000th)th sampling point, where i = 1, 2, 3, representing the first temperature, the second temperature, and the surface temperature, respectively. , ..., Let i be the temperature value at the m-th, ..., m+1000th sampling point of temperature i; Let i be the average temperature of temperature i over the range from the mth to the (m+1000th)th sampling point; Let i be the weight of temperature i at the (m+1001)th sampling point; This represents the junction temperature of the GaN MOSFET at the (m+1001)th sampling point.

4. The GaN MOSFET junction temperature measurement method as described in claim 1, characterized in that, Calculate the drain-source on-resistance of a GaN MOSFET using the following formula: ； in, This is the drain-source on-resistance; This is the drain-source conduction current; This is the drain-source conduction voltage drop; The on-time and off-time of a GaN MOSFET can be calculated using the following formula: ； in, For conduction time; This refers to the shutdown time; The rise time of the drain-source voltage; The fall time of the drain-source voltage; The rise time of the gate-source voltage; This represents the fall time of the gate-source voltage.

5. A GaN MOSFET junction temperature measuring device, characterized in that, include: The system includes a data acquisition module, a first temperature matching module, a second temperature matching module, and a junction temperature calculation module. The data acquisition module is used to acquire the drain-source on-state current, drain-source on-state voltage drop, drain-source voltage rise time, drain-source voltage fall time, gate-source voltage rise time, gate-source voltage fall time, and surface temperature of the GaN MOSFET; wherein, the surface temperature is measured by a thermocouple disposed on the surface of the GaN MOSFET. The first temperature matching module is used to calculate the drain-source on-resistance of the GaN MOSFET based on the drain-source on-current and the drain-source on-voltage drop, and then match the first temperature corresponding to the drain-source on-resistance in a preset temperature change table. The second temperature matching module is used to calculate the turn-on time and turn-off time of the GaN MOSFET based on the rise time of the drain-source voltage, the fall time of the drain-source voltage, the rise time of the gate-source voltage, and the fall time of the gate-source voltage, and then match the second temperature corresponding to the turn-on time and turn-off time in the temperature change table. The junction temperature calculation module is used to calculate the junction temperature of the GaN MOSFET based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

6. The GaN MOSFET junction temperature measuring device as described in claim 5, characterized in that, The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature. The junction temperature calculation steps include: Acquire several historical sampling data of the GaN MOSFET; wherein, the historical sampling data includes: historical surface temperature, historical first temperature and historical second temperature; The cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the historical first temperature, and the cumulative error corresponding to the historical second temperature are calculated based on the historical surface temperature, the historical first temperature, and the historical second temperature. The weights corresponding to the surface temperature, the first temperature, and the second temperature are calculated based on the cumulative error corresponding to the historical surface temperature, the cumulative error corresponding to the first historical temperature, and the cumulative error corresponding to the second historical temperature. The junction temperature of the GaN MOSFET is calculated based on the surface temperature, the first temperature, the second temperature, the weight corresponding to the surface temperature, the weight corresponding to the first temperature, and the weight corresponding to the second temperature.

7. The GaN MOSFET junction temperature measuring device as described in claim 6, characterized in that, The junction temperature of a GaN MOSFET can be calculated using the following formula: ； ； ； in, Let i be the cumulative error of temperature i from the mth to the (m+1000th)th sampling point, where i = 1, 2, 3, representing the first temperature, the second temperature, and the surface temperature, respectively. , ..., Let i be the temperature value at the m-th, ..., m+1000th sampling point of temperature i; Let i be the average temperature of temperature i over the range from the mth to the (m+1000th)th sampling point; Let i be the weight of temperature i at the (m+1001)th sampling point; This represents the junction temperature of the GaN MOSFET at the (m+1001)th sampling point.

8. The GaN MOSFET junction temperature measuring device as described in claim 5, characterized in that, Calculate the drain-source on-resistance of a GaN MOSFET using the following formula: ； in, This is the drain-source on-resistance; This is the drain-source conduction current; This is the drain-source conduction voltage drop; The on-time and off-time of a GaN MOSFET can be calculated using the following formula: ； in, For conduction time; This refers to the shutdown time; The rise time of the drain-source voltage; The fall time of the drain-source voltage; The rise time of the gate-source voltage; This represents the fall time of the gate-source voltage.

9. An electronic device, characterized in that, The method includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein the processor executes the computer program to implement the GaN MOSFET junction temperature measurement method as described in any one of claims 1 to 4.

10. A storage medium, characterized in that, The storage medium includes a stored computer program, wherein, when the computer program is executed, it controls the device containing the storage medium to perform the GaNMOSFET junction temperature measurement method as described in any one of claims 1 to 4.

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