Gallium nitride high electron mobility transistor and its fabrication method

Abstract

This application discloses a gallium nitride high electron mobility transistor and its fabrication method. The gallium nitride high electron mobility transistor includes: a substrate; a channel layer and a barrier layer sequentially disposed along a direction away from the substrate; a gate electrode disposed on the side of the barrier layer away from the substrate; a passivation layer covering the gate electrode and the barrier layer; two first electrode vias disposed on opposite sides of the gate electrode in a first direction, each first electrode via penetrating the passivation layer, and the bottom of each first electrode via extending at least into the barrier layer; the first direction being parallel to the substrate; two first conductive structures correspondingly filling the two first electrode vias; and a first wiring layer disposed on the surface of the passivation layer away from the substrate, covering each first electrode via, and connected to the first conductive structures.

Images