Novel PVD cooling cavity structure

Abstract

The invention discloses a novel PVD (physical vapor deposition) cooling cavity structure, and relates to the technical field of semiconductor processing. A cooling disc is embedded in a bottom plate of a cooling cavity, a snakelike cooling flow channel in the cooling disc is integrally formed with a flow equalizing cavity and a flow converging cavity, and an inlet of the flow equalizing cavity is connected with an external cooling medium supply unit through a pipeline; the cooling medium is uniformly distributed to each section of the snake-shaped flow channel and exchanges heat with the wafer through the binding surface of the cooling disc in the flowing process, the temperature sensor collects temperature data in real time, and when the temperature of a certain area is higher than a set value, the sensor triggers the flow rate adjusting valve to increase the flow rate. And when the temperature is lower than the set value, the flow is reduced, so that the temperature difference of the binding surface is controlled, the problems that the temperature of the wafer is easy to rise and the stability of the temperature of the cooling surface is difficult to maintain in the traditional PVD cooling technology are solved, and the better effects of ensuring that the temperature of the wafer is not easy to rise and the stability of the temperature of the cooling surface is maintained are achieved.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and in particular to a novel PVD cooling cavity structure. Background Technology

[0002] In physical vapor deposition (PVD) processes, heat dissipation challenges in a vacuum environment directly affect coating quality and production efficiency. As a core temperature control component, PVD cooling chambers have been developed into various technical solutions.

[0003] Traditional PVD cooling technologies mostly rely on wafer substrates with gas back pressure and mechanical pressure rings to improve the heat transfer efficiency between the wafer and the cooling structure. The wafer is placed on the mating surface of the substrate, and the wafer edge is pressed tightly by the mechanical pressure ring, forming a closed micro-gap between the wafer and the substrate. Inert gas is then introduced into the gap to maintain the back pressure state. The heat of the coating on the wafer surface is transferred to the substrate by the heat transfer effect of the gas. However, the stability of the back pressure state is affected by changes in gas flow rate. When the back pressure decreases, the gas flow rate decreases, the heat transfer efficiency decreases, and the wafer temperature rises, making it difficult to maintain the temperature stability of the cooling surface.

[0004] In view of this, a novel PVD cooling cavity structure is provided to solve the above problems. Summary of the Invention

[0005] The purpose of this application is to solve the problem that traditional PVD cooling technology easily leads to wafer temperature rise and makes it difficult to maintain the stability of the cooling surface temperature. In order to solve the above technical problems, a new PVD cooling cavity structure is provided to ensure that wafer temperature does not easily rise and the cooling surface temperature remains stable.

[0006] To achieve the above objectives, the embodiments of this application adopt the following technical solution: a novel PVD cooling chamber structure, including a cooling chamber body, a cooling chamber base plate, and a cooling plate disposed on the cooling chamber base plate. The cooling chamber base plate serves as a load-bearing substrate, and a positioning groove and quick-release connection hole are formed on the surface of the cooling chamber base plate. The cooling plate is embedded in the positioning groove of the cooling chamber base plate, and the top surface of the cooling plate is the wafer bonding surface. A cooling space is formed inside the cooling plate. An integrally formed cooling plate flow channel is provided within the cooling space. The cooling plate flow channel is a fitted serpentine shape, and the inlet end of the cooling plate flow channel is connected to a homogenizing... The outlet end of the cooling plate flow channel is connected to a manifold, and a temperature sensor is embedded in the bottom of the wafer bonding surface of the cooling plate. The temperature sensor is used to monitor the cooling status of the cooling plate in real time and adjust the flow rate of the cooling medium accordingly. The flow equalization cavity of the cooling plate flow channel is connected to the cooling medium supply unit through a pipeline, and the manifold is connected to the cooling medium return unit through a pipeline. The temperature sensor is electrically connected to the flow rate regulating valve of the cooling medium supply unit. The temperature sensor collects the temperature signal of the cooling plate and triggers the flow rate regulating valve to adjust the flow rate of the cooling medium in order to maintain the temperature of the wafer bonding surface.

[0007] Furthermore, according to an embodiment of this application, a top pin tray is suspended on the wafer bonding surface of the cooling pad by an elastic support member, and the top pin tray is adapted to the cooling pad.

[0008] Furthermore, according to an embodiment of this application, at least three top pins are provided on the top pin tray, and each top pin is connected to the top pin tray through a threaded adjustment seat, which can be screwed to adjust the spacing between the top pins.

[0009] Furthermore, according to an embodiment of this application, a guide mechanism is also provided inside the cooling cavity body. The upper end of the guide mechanism is fixedly connected to the top pin tray, and the lower end of the guide mechanism passes through the central through hole of the clavicle cooling plate.

[0010] Furthermore, according to an embodiment of this application, the guide mechanism includes a linear bearing assembly and an axial limiting slider, wherein the linear bearing assembly is used to realize the linear lifting action of the top pin tray.

[0011] Furthermore, according to an embodiment of this application, the axial limiting slider cooperates with the keyway of the central through hole, and the axial limiting slider is used to limit the circumferential rotation of the top pin tray.

[0012] Furthermore, according to an embodiment of this application, the distance between the wafer bonding surface and the top pin tray is 2-5mm, and the top tip of the top pin protrudes from the surface of the top pin tray.

[0013] Furthermore, according to the embodiments of this application, the surface of the cooling chamber bottom plate is provided with quick-release connection holes, the cooling chamber body is also provided with a mounting frame, and the cooling chamber bottom plate is bolted to the mounting frame through the quick-release connection holes.

[0014] Furthermore, according to an embodiment of this application, the mounting frame is provided with a vacuum pipe flange, a special gas pipe interface, and a cylinder mounting position.

[0015] Furthermore, according to an embodiment of this application, the cooling plate is made of silicon alloy material, and the top pin is made of ceramic insulating material.

[0016] Compared with the prior art, this application embeds a cooling plate in the bottom plate of the cooling chamber. The serpentine cooling channel inside the cooling plate is integrally formed with the flow equalization chamber and the flow collection chamber. The inlet of the flow equalization chamber is connected to an external cooling medium supply unit through a pipeline, and the outlet of the flow collection chamber is connected to a return unit. The cooling medium is evenly distributed to each section of the serpentine channel. During the flow, it exchanges heat with the wafer through the contact surface of the cooling plate. The temperature sensor collects temperature data in real time. When the temperature of a certain area is higher than the set value, the sensor triggers the flow rate regulating valve to increase the flow rate. When the temperature is lower than the set value, the flow rate is reduced, so that the temperature difference of the contact surface is controlled. This solves the problem that traditional PVD cooling technology is prone to wafer temperature rise and it is difficult to maintain the stability of the cooling surface temperature. It achieves a better effect of ensuring that the wafer temperature does not rise and maintaining the stability of the cooling surface temperature. Attached Figure Description

[0017] The present application will be further described below with reference to the accompanying drawings and embodiments.

[0018] Figure 1 This is a three-dimensional structural diagram of a novel PVD cooling cavity structure according to an embodiment of this application.

[0019] Figure 2 This is a schematic diagram of a novel PVD cooling cavity structure according to an embodiment of this application.

[0020] In the attached diagram: 10, cooling chamber body; 20, cooling chamber bottom plate; 30, cooling plate; 21, positioning groove; 31, cooling space; 32, cooling plate flow channel; 33, temperature sensor; 34, top pin tray; 35, top pin. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the present invention clear and complete, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only some, not all, embodiments of the present invention, and are merely illustrative of the embodiments of the present invention. They are not intended to limit the embodiments of the present invention. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] In the description of this invention, it should be noted that the terms "center," "middle," "upper," "lower," "left," "right," "inner," "outer," "top," "bottom," "side," "vertical," and "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "a," "first," "second," "third," "fourth," "fifth," and "sixth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0023] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0024] For purposes of simplicity and illustration, the principles of the embodiments are described primarily by way of example. In the following description, numerous specific details are set forth to provide a thorough understanding of the embodiments. However, it will be apparent to those skilled in the art that these embodiments may not be limited to these specific details in practice. In some instances, well-known methods and structures have not been described in detail to avoid unnecessarily obscuring these embodiments. Furthermore, all embodiments can be used in combination with each other. Example

[0025] like Figure 1-2As shown, this application provides a novel PVD cooling chamber structure, including a cooling chamber body 10, a cooling chamber base plate 20, and a cooling plate 30 disposed on the cooling chamber base plate 20. The cooling chamber base plate 20 serves as a supporting substrate, and a positioning groove 21 and quick-release connection holes are formed on the surface of the cooling chamber base plate 20. The cooling plate 30 is embedded in the positioning groove 21 of the cooling chamber base plate 20, and the top surface of the cooling plate 30 is the wafer bonding surface. A cooling space 31 is formed inside the cooling plate 30. An integrally formed cooling plate flow channel 32 is provided in the cooling space 31. The cooling plate flow channel 32 is in a fitted serpentine shape, and the inlet end of the cooling plate flow channel 32 is connected to... The cooling tray 30 has a flow equalization cavity, and the outlet end of the cooling tray flow channel 32 is connected to a manifold cavity. A temperature sensor 33 is embedded in the bottom of the wafer bonding surface of the cooling tray 30. The temperature sensor 33 is used to monitor the cooling status of the cooling tray in real time and adjust the flow rate of the cooling medium accordingly. The flow equalization cavity of the cooling tray flow channel 32 is connected to the cooling medium supply unit through a pipeline, and the manifold cavity is connected to the cooling medium return unit through a pipeline. The temperature sensor 33 is electrically connected to the flow rate regulating valve of the cooling medium supply unit. The temperature sensor 33 collects the temperature signal of the cooling tray 30 and triggers the flow rate regulating valve to adjust the flow rate of the cooling medium in order to maintain the temperature of the wafer bonding surface.

[0026] Furthermore, a top pin tray 34 is suspended on the wafer bonding surface of the cooling tray 30 by an elastic support member. The top pin tray 34 is adapted to the cooling tray 30. At least three top pins 35 are threaded onto the top pin tray 34. Each top pin 35 is connected to the top pin tray 34 through a threaded adjustment seat. The threaded adjustment seat can be screwed to adjust the spacing of the top pins 35. Loosening the locking nut of the top pin 35 and screwing the threaded adjustment seat can change the relative spacing of the top pins 35. After measuring the spacing to the target value, the nut is locked, which adapts to the support point position of 6-inch or 8-inch wafers. The top pin 35 is inserted into the guide hole of the top pin tray 34. The threaded adjustment seat cooperates with the threaded hole of the top pin tray 34. Tightening the adjustment seat can move the top pin 35 axially, thereby adjusting the spacing between at least three top pins 35. For example, when the spacing is adjusted to 150mm, it is suitable for 6-inch wafers, and when it is adjusted to 200mm, it is suitable for 8-inch wafers. After adjustment, the position between the top pins 35 is fixed by locking the nut. No components need to be disassembled in the whole process and the operation time is greatly saved.

[0027] Furthermore, the cooling chamber body 10 is also equipped with a guide mechanism. The upper end of the guide mechanism is fixedly connected to the top pin tray 34, and the lower end of the guide mechanism passes through the central through hole of the clavicle cooling plate. The guide mechanism includes a linear bearing assembly and an axial limiting slider. The linear bearing assembly is used to realize the linear lifting and lowering action of the top pin tray 34. The axial limiting slider cooperates with the keyway of the central through hole and is used to limit the circumferential rotation of the top pin tray 34. The inner ring of the linear bearing assembly is fixed to the central axis of the top pin tray 34, and the outer ring is fitted with the central through hole of the cooling plate; the circumferential limiting slider is fixed to the side wall of the central axis and slides in fit with the keyway of the central through hole. When the cylinder drives the top pin tray 34 to rise and fall, the slider moves along the keyway to limit the circumferential rotation of the top pin tray 34 and ensure the alignment accuracy of the top pin 35 with the wafer. When the wafer is transferred to the top of the cooling chamber, the cylinder drives the lifting guide mechanism to rise, and the top pin tray 34 moves up accordingly. The top pin 35 protrudes from the cooling plate bonding surface and receives the wafer. Then the cylinder drives the top pin tray 34 to fall, and the top pin 35 gradually becomes flush with the cooling plate bonding surface, and the wafer is placed stably on the cooling plate bonding surface.

[0028] Furthermore, the distance between the wafer bonding surface and the top pin tray 34 is 2-5mm, and the top tip of the top pin 35 protrudes from the surface of the top pin tray 34. When the top pin tray descends to its limit position, the top tip of the top pin 35 is flush with the wafer bonding surface of the cooling tray.

[0029] Furthermore, the surface of the cooling chamber bottom plate 20 is provided with quick-release connection holes, and the cooling chamber body 10 is also provided with an installation frame. The cooling chamber bottom plate 20 is bolted to the installation frame through the quick-release connection holes. The installation frame is equipped with a vacuum pipe flange, a special gas pipe interface, and a cylinder mounting position.

[0030] Furthermore, the cooling plate is made of silicon alloy, and the top pin 35 is made of ceramic insulating material.

[0031] Compared with the prior art, this application embeds a cooling plate in the bottom plate 20 of the cooling chamber. The serpentine cooling channel inside the cooling plate is integrally formed with the flow equalization chamber and the flow collection chamber. The inlet of the flow equalization chamber is connected to the external cooling medium supply unit through a pipeline, and the outlet of the flow collection chamber is connected to the return unit. The cooling medium is evenly distributed to each section of the serpentine channel. During the flow, the medium exchanges heat with the wafer through the contact surface of the cooling plate. The temperature sensor 33 collects temperature data in real time. When the temperature of a certain area is higher than the set value, the sensor triggers the flow rate regulating valve to increase the flow rate. When the temperature is lower than the set value, the flow rate is reduced, so that the temperature difference of the contact surface is controlled. This solves the problem that traditional PVD cooling technology is prone to wafer temperature rise and it is difficult to maintain the stability of the cooling surface temperature. It achieves a better effect of ensuring that the wafer temperature does not rise and maintaining the stability of the cooling surface temperature. Example

[0032] This embodiment provides a novel PVD cooling cavity structure, which has the same structural features as Embodiment 1.

[0033] The flow equalization cavity of the cooling plate flow channel 32 is a funnel-shaped cavity. The interior of the flow equalization cavity is provided with several flow-dividing ribs. The flow-dividing ribs divide the flow equalization cavity into sub-cavities that match the number of segments of the cooling plate flow channel 32, so that the cooling medium is evenly distributed to each flow channel segment, thereby achieving a qualified temperature range and ensuring the wafer bonding temperature.

[0034] During temperature control, the cooling medium is evenly distributed to each section of the serpentine flow channel via the flow distribution fins of the flow equalization cavity. During the flow, it exchanges heat with the wafer through the bonding surface of the cooling plate. Multiple temperature sensors 33 collect temperature data in real time. When the temperature of a certain area is higher than the set value, the sensor triggers the flow rate regulating valve to increase the flow rate. When the temperature is lower than the set value, the flow rate is reduced, so that the temperature difference of the bonding surface is controlled within ±2℃. For example, the temperature sensors 33 can be distributed in the center and edge areas of the bonding surface to ensure that the temperature sensors 33 can collect the temperature data of the wafer bonding surface.

[0035] Although the illustrative specific embodiments of this application have been described above to enable those skilled in the art to understand this application, this application is not limited to the scope of the specific embodiments. For those skilled in the art, all applications utilizing the concept of this application are protected as long as various variations are within the spirit and scope of this application as defined and determined by the appended claims.

Claims

1. A novel PVD cooling chamber structure, comprising a cooling chamber body, a cooling chamber base plate, and a cooling plate disposed on the cooling chamber base plate, wherein the cooling chamber base plate is a load-bearing substrate, and the surface of the cooling chamber base plate is provided with a positioning groove and a quick-release connection hole; Its features are, The cooling plate is embedded in the positioning groove of the bottom plate of the cooling chamber, the top surface of the cooling plate is the wafer bonding surface, and a cooling space is opened inside the cooling plate; The cooling space is provided with an integrally formed cooling plate flow channel. The cooling plate flow channel is in a serpentine shape. The inlet end of the cooling plate flow channel is connected to a flow equalization cavity, and the outlet end of the cooling plate flow channel is connected to a flow collection cavity. Furthermore, a temperature sensor is embedded in the bottom of the wafer bonding surface of the cooling plate. The temperature sensor is used to monitor the cooling status of the cooling plate in real time and to adjust the flow rate of the cooling medium accordingly. The flow equalization cavity of the cooling plate flow channel is connected to the cooling medium supply unit through a pipeline, and the flow manifold is connected to the cooling medium return unit through a pipeline. The temperature sensor is electrically connected to the flow rate regulating valve of the cooling medium supply unit. The temperature sensor collects the temperature signal of the cooling plate and triggers the flow rate regulating valve to adjust the flow rate of the cooling medium in order to maintain the temperature of the wafer bonding surface.

2. The novel PVD cooling chamber structure according to claim 1, characterized in that, A top pin tray is suspended on the wafer bonding surface of the cooling tray by an elastic support member, and the top pin tray is adapted to the cooling tray.

3. The novel PVD cooling cavity structure according to claim 2, characterized in that, At least three top pins are mounted on the top pin tray. Each top pin is connected to the top pin tray via a threaded adjustment seat, which can be screwed to adjust the spacing between the top pins.

4. The novel PVD cooling chamber structure according to claim 1, characterized in that, The cooling chamber body is also provided with a guide mechanism. The upper end of the guide mechanism is fixedly connected to the top pin tray, and the lower end of the guide mechanism passes through the central through hole of the clavicle cooling plate.

5. The novel PVD cooling cavity structure according to claim 4, characterized in that, The guiding mechanism includes a linear bearing assembly and an axial limiting slider. The linear bearing assembly is used to realize the linear lifting action of the top pin tray.

6. The novel PVD cooling cavity structure according to claim 5, characterized in that, The axial limiting slider engages with the keyway of the central through hole, and the axial limiting slider is used to restrict the circumferential rotation of the top pin tray.

7. The novel PVD cooling cavity structure according to claim 3, characterized in that, The distance between the wafer bonding surface and the top pin tray is 2-5mm, and the top tip of the top pin protrudes from the surface of the top pin tray.

8. The novel PVD cooling cavity structure according to claim 1, characterized in that, The cooling chamber bottom plate is also provided with quick-release connection holes, and the cooling chamber body is also provided with an installation frame. The cooling chamber bottom plate is bolted to the installation frame through the quick-release connection holes.

9. A novel PVD cooling cavity structure according to claim 8, characterized in that, The mounting frame is equipped with vacuum pipe flanges, special gas pipe interfaces, and cylinder mounting positions.

10. A novel PVD cooling cavity structure according to claim 3, characterized in that, The cooling plate is made of silicon alloy, and the top pin is made of ceramic insulating material.

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