Cover opening plate manufacturing method and cover opening plate
By transferring the core board circuit pattern, pressing the pre-set stacked structure, vacuum heating treatment, and removal treatment, the problems of excess glue and uneven dielectric layer thickness were solved, and efficient and high-quality open-top board production was achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-02
- Publication Date
- 2026-04-14
AI Technical Summary
In existing technologies, there are problems with glue overflow and uneven dielectric layer thickness when manufacturing semi-flexible and pitted boards, resulting in low success rate, low efficiency and poor quality in the production of openable boards.
The method employs core board circuit pattern transfer processing, pre-set stacked structure lamination, outer layer circuit pattern fabrication, vacuum heating treatment, and removal processing. By using conductive soldering board processing and vacuum heating, the bonding force between the copper-clad sub-region and the dielectric layer is reduced, thereby achieving efficient separation of the copper-clad sub-region.
This improved the success rate and efficiency of cover plate manufacturing, ensured the uniformity and integrity of the dielectric layer, and enhanced the quality of the cover plate.
Smart Images
Figure CN121865533A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of printed circuit board manufacturing technology, and in particular to a method for manufacturing a cover plate and the cover plate itself. Background Technology
[0002] Currently, in the PCB industry, the fabrication of semi-flexible and recessed boards mainly utilizes methods such as pre-windowed prepreg or depth-controlled milling. In the pre-windowing method, windows are pre-processed into the prepreg to create a pre-windowed prepreg. The windowed area of the prepreg is precisely aligned with the flexible area to be exposed on the underlying core board before lamination. During this lamination process, the high pressure causes the prepreg adhesive to flow, often resulting in adhesive overflow after the cover is opened. Depth-controlled blind milling, also known as controlled-depth milling or blind milling, involves using a precision CNC milling machine to precisely mill away a specified depth of dielectric material (such as prepreg) in the area where recesses are needed after the PCB has been laminated into a single thick board. However, this method does not mill through to the underlying copper foil circuitry. Depth-controlled blind milling can easily lead to uneven remaining dielectric layer thickness, breakage during bending, or insufficient depth. Excessive adhesive and uneven thickness of the remaining dielectric layer can both reduce the success rate and efficiency of opening the cover plate, resulting in poor quality of the opened cover plate. Summary of the Invention
[0003] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a method for manufacturing a cover plate and a cover plate itself, which can improve the success rate and efficiency of cover plate manufacturing, and improve the quality of the manufactured cover plate.
[0004] In a first aspect, embodiments of this application provide a method for manufacturing a cover plate, including: The first dummy layer board is subjected to core board circuit pattern transfer processing to obtain the second dummy layer board; wherein, the second dummy layer board includes: a copper-clad sub-region corresponding to the open cover area; According to the preset stacked structure, the first core board, the first prepreg, the second dummy layer, the second prepreg, and the second core board are stacked and pressed together from bottom to top to obtain the first semi-finished substrate. The first semi-finished substrate is sequentially processed with outer layer circuit pattern fabrication, outer layer solder mask fabrication and outer layer silk screen printing to obtain the second semi-finished substrate. The copper-clad sub-region on the second semi-finished substrate is exposed by an opening process to obtain an open cover plate; wherein the opening process includes a router process based on a preset processing path, a vacuum heating process, and a removal process.
[0005] According to some embodiments of this application, the step of performing core board circuit pattern transfer processing on the first dummy layer board to obtain the second dummy layer board includes: A first dummy layer is provided, the first dummy layer comprising a copper layer and a dielectric layer; The copper-clad layer of the first dummy layer is etched to obtain a second dummy layer including the copper-clad sub-region and the dielectric layer; wherein the copper-clad sub-region is formed after etching the copper-clad layer.
[0006] According to some embodiments of this application, the step of performing a capping process on the capping area of the second semi-finished substrate to expose the copper-clad sub-area and obtain a capping plate includes: The second semi-finished substrate is subjected to a winding process based on a preset processing path by means of a conductive winding to obtain a third semi-finished substrate including a stacked cover structure to be removed; wherein, the stacked cover structure to be removed includes: the dielectric layer above the opening area, the second prepreg and the second core board. The third semi-finished substrate is fed into the vacuum tunnel furnace and subjected to vacuum heating treatment to obtain a heated fourth semi-finished substrate; wherein, the bonding force between the copper-clad sub-region of the second dummy layer and the dielectric layer is reduced in the heated fourth semi-finished substrate. The stacked cover structure to be removed from the fourth semi-finished substrate is removed to obtain the open cover plate.
[0007] According to some embodiments of this application, the step of performing a router process on the opening area of the second semi-finished substrate based on a preset processing path using a conductive router to obtain a third semi-finished substrate including a stacked cover structure to be removed includes: Place the second semi-finished substrate in the working area of the milling machine; The conductive milling cutter is controlled to mill the opening area of the second semi-finished substrate along a preset processing path to obtain the third semi-finished substrate.
[0008] According to some embodiments of this application, the preset processing path includes: a peripheral path and an S-shaped path.
[0009] According to some embodiments of this application, the removal process of the stacked cover structure to be removed from the fourth semi-finished substrate to obtain the open cover plate includes: The heated fourth semi-finished substrate is tapped to separate the stacked cover structure to be removed from the heated fourth semi-finished substrate, thereby separating the copper surface of the copper-clad sub-region in the second dummy layer from the dielectric layer, thus obtaining the open cover plate.
[0010] According to some embodiments of this application, the removal process of the stacked cover structure to be removed from the fourth semi-finished substrate to obtain the open cover plate includes: The tape is applied to the laminated cover structure to be removed from the heated fourth semi-finished substrate. By removing the adhesive tape, the adhered laminated cover structure to be removed is separated from the fourth semi-finished substrate, and the copper surface of the copper-clad sub-region in the second dummy layer is separated from the dielectric layer, thus obtaining the open cover plate.
[0011] According to some embodiments of this application, the step of sending the third semi-finished substrate into the vacuum tunnel furnace and performing vacuum heating treatment on the third semi-finished substrate to obtain a heated fourth semi-finished substrate includes: The target heating temperature is determined based on the type of material used in the second dummy layer. The vacuum tunnel furnace is controlled to perform vacuum heating treatment on the third semi-finished substrate according to the target heating temperature to obtain the heated fourth semi-finished substrate.
[0012] According to some embodiments of this application, the number of the opening areas is at least one.
[0013] Secondly, embodiments of this application provide a cover plate, which is prepared by the cover plate manufacturing method described in any one of the embodiments of the first aspect.
[0014] This application embodiment includes the following steps in the fabrication of the cover plate: First, the first dummy layer board undergoes core board circuit pattern transfer processing to obtain a second dummy layer board; wherein, the second dummy layer board includes a copper-clad sub-region corresponding to the cover area; second, according to a preset stacking structure, the first core board, the first prepreg, the second dummy layer board, the second prepreg, and the second core board are stacked and pressed from bottom to top to obtain a first semi-finished substrate; then, the first semi-finished substrate is sequentially subjected to outer layer circuit pattern fabrication, outer layer solder mask fabrication, and outer layer silkscreen fabrication to obtain a second semi-finished substrate; finally, the cover area on the second semi-finished substrate is opened to expose the copper-clad sub-region to obtain the cover plate; wherein, the opening process includes router processing, vacuum heating processing, and removal processing based on a preset processing path. This application bonds the dielectric layer in the second dummy layer to the first prepreg, one copper surface of the copper-clad sub-region in the second dummy layer to the dielectric layer, and the other copper surface of the copper-clad sub-region in the second dummy layer to the second prepreg. Through router processing and vacuum heating based on a preset processing path, the bonding force between the copper surface of the copper-clad sub-region in the second dummy layer and the dielectric layer is weakened. This allows for more efficient and convenient separation of the copper surface of the copper-clad sub-region from the dielectric layer during removal, while also reducing damage to the board, resulting in a high-quality open-face board, and improving the success rate and efficiency of open-face board manufacturing. In other words, the embodiments of this application can improve the success rate and efficiency of open-face board manufacturing, and improve the quality of the manufactured open-face board.
[0015] Other features and advantages of this application will be set forth in the following description and will be apparent in part from the description or may be learned by practicing the application. The objectives and other advantages of this application may be realized and obtained by means of the structures particularly pointed out in the description and the accompanying drawings. Attached Figure Description
[0016] Figure 1 This is a flowchart illustrating the steps of a cover plate manufacturing method according to an embodiment of this application; Figure 2 This is a schematic diagram of the specific structure of the second dummy layer provided in one embodiment of this application; Figure 3 This is a schematic diagram of a specific structure of a preset stacked structure provided in one embodiment of this application; Figure 4 This is a schematic diagram of the specific structure of the second semi-finished substrate provided in one embodiment of this application; Figure 5 This is a schematic diagram of a preset processing path used in the sprue processing according to an embodiment of this application; Figure 6 This is a side view schematic diagram of a third semi-finished substrate obtained according to an embodiment of this application; Figure 7 This is a top view schematic diagram of a third semi-finished substrate obtained according to an embodiment of this application; Figure 8 This is a schematic diagram of vacuum heating treatment via a vacuum tunnel furnace according to an embodiment of this application; Figure 9 This is a schematic diagram of adhesive tape being adhered to a fourth semi-finished substrate according to an embodiment of this application; Figure 10 This is a schematic diagram of the adhesion state between the tape and the laminated cover structure after the laminated cover structure is separated from the fourth semi-finished substrate according to an embodiment of this application. Detailed Implementation To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments.
[0017] It should be understood that in the description of this application, the orientation descriptions, such as up, down, front, back, left, right, etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0018] It should be noted that although a logical order is shown in the flowcharts in this application, in some cases, the steps shown or described may be performed in a different order than that shown in the flowcharts. In the description of this application, "several" means one or more, and "more" means two or more. The terms "first" and "second" are used only to distinguish technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of technical features indicated, or implicitly indicating the order in which the technical features are indicated.
[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.
[0020] This application provides a method for manufacturing a cover plate and the cover plate itself, relating to the field of printed circuit board manufacturing technology. The method includes: performing core board circuit pattern transfer processing on a first dummy layer board to obtain a second dummy layer board; wherein the second dummy layer board includes a copper-clad sub-region corresponding to the cover area; according to a preset stacking structure, stacking and pressing a first core board, a first prepreg, a second dummy layer board, a second prepreg, and a second core board from bottom to top to obtain a first semi-finished substrate; sequentially performing outer layer circuit pattern fabrication, outer layer solder mask fabrication, and outer layer silkscreen fabrication on the first semi-finished substrate to obtain a second semi-finished substrate; performing a cover-opening process on the cover area of the second semi-finished substrate to expose the copper-clad sub-region, obtaining the cover plate; wherein the cover-opening process includes routing processing, vacuum heating processing, and removal processing based on a preset processing path. This method can improve the success rate and efficiency of cover plate manufacturing, and improve the quality of the manufactured cover plate.
[0021] The embodiments of this application will be further described below with reference to the accompanying drawings.
[0022] Firstly, such as Figure 1 As shown, Figure 1 This is a schematic flowchart of a cover plate manufacturing method provided in one embodiment of this application; the cover plate manufacturing method includes, but is not limited to, steps S100 to S400.
[0023] Step S100: Perform core board circuit pattern transfer processing on the first dummy layer board to obtain the second dummy layer board; wherein, the second dummy layer board includes: a copper-clad sub-region corresponding to the open cover area.
[0024] Step S200: According to the preset stacked structure, the first core board, the first prepreg, the second dummy layer, the second prepreg, and the second core board are stacked and pressed from bottom to top to obtain the first semi-finished substrate.
[0025] Step S300: The outer layer circuit pattern, outer layer solder mask and outer layer silk screen are sequentially processed on the first semi-finished substrate to obtain the second semi-finished substrate.
[0026] Step S400: The open area on the second semi-finished substrate is opened to expose the copper-clad sub-area, resulting in an open plate; wherein, the open area opening process includes a router process based on a preset processing path, a vacuum heating process, and a removal process.
[0027] Further explanation of step S100. Combined with... Figure 3 and Figure 4It is understood that, according to some embodiments of this application, the number of uncovered regions 106 is at least one. Similarly, there is also at least one copper-clad sub-region 1031 corresponding to the uncovered region 106. The number of uncovered regions 106 and the number of copper-clad sub-regions 1031 are the same, and the number of uncovered regions 106 and the number of copper-clad sub-regions 1031 can be determined according to the board manufacturing requirements; therefore, this application does not impose specific limitations on the number of uncovered regions 106 and the number of copper-clad sub-regions 1031.
[0028] According to some embodiments of this application, step S100 is further described. Step S100: The first dummy layer board is subjected to core board circuit pattern transfer processing to obtain the second dummy layer board, including but not limited to steps S110 to S120.
[0029] Step S110: Provide a first dummy layer, which includes a copper layer and a dielectric layer.
[0030] Step S120: Etch the copper layer of the first dummy layer to obtain a second dummy layer including a copper sub-region and a dielectric layer; wherein the copper sub-region is formed after etching the copper layer.
[0031] Step S110 provides a first dummy board including a complete copper cladding layer and dielectric layer, providing a processing basis for core board circuit pattern transfer processing.
[0032] like Figure 2 As shown, Figure 2 This is a schematic diagram of the specific structure of the second dummy layer board provided in one embodiment of this application. Through step S120, after etching the copper layer of the first dummy layer board, a copper-clad sub-region 1031 is obtained. That is, the obtained second dummy layer board 103 only retains the copper lines corresponding to the uncovered region 106, laying the foundation for subsequent uncovering processing. The copper-clad sub-region 1031 and the dielectric layer 1032 form a structure as shown in the diagram. Figure 2 The second dummy layer 103 is shown.
[0033] Further explanation of step S200. Step S200: According to the preset stacked structure, the first core board, the first prepreg, the second dummy layer, the second prepreg, and the second core board are stacked and pressed from bottom to top to obtain the first semi-finished substrate.
[0034] Specifically, such as Figure 3 As shown, Figure 3 This is a schematic diagram of a specific structure of a preset stacked structure provided in an embodiment of this application; the preset stacked structure 100 includes: a first core board 101, a first prepreg 102, a second dummy layer 103, a second prepreg 104, and a second core board 105 stacked sequentially from top to bottom; after pressing the preset stacked structure 100, a first semi-finished substrate can be obtained, so as to facilitate the subsequent step S300.
[0035] Further explanation of step S300: The first semi-finished substrate is sequentially processed with outer layer circuit pattern fabrication, outer layer solder mask fabrication, and outer layer silkscreen printing to obtain the second semi-finished substrate. It can be understood that, according to the required circuitry, the outer surfaces of the first core board 101 and the second core board 105 in the first semi-finished substrate can be processed with outer layer circuit pattern fabrication, outer layer solder mask fabrication, and outer layer silkscreen printing to obtain, as shown... Figure 4 The second semi-finished substrate 200 is shown; Figure 4 This is a schematic diagram of the specific structure of the second semi-finished substrate provided in one embodiment of this application; it can be seen that the outer layer of the second semi-finished substrate 200 is covered with solder resist, and the copper-clad sub-region 1031 of the second dummy layer 103 corresponds to the open cover region 106.
[0036] According to some embodiments of this application, step S400 is further described. Step S400: The cover area on the second semi-finished substrate is opened to expose the copper-clad sub-area, and the cover plate is obtained, including but not limited to steps S410 to S430.
[0037] Step S410: The opening area of the second semi-finished substrate is processed by a conductive router based on a preset processing path to obtain a third semi-finished substrate including a stacked cover structure to be removed; wherein, the stacked cover structure to be removed includes: a dielectric layer above the opening area, a second prepreg, and a second core board.
[0038] Step S420: The third semi-finished substrate is sent into a vacuum tunnel furnace and vacuum-heated to obtain a heated fourth semi-finished substrate; wherein, the bonding force between the copper-clad sub-region of the second dummy layer and the dielectric layer is reduced in the heated fourth semi-finished substrate.
[0039] Step S430: Remove the stacked cover structure to be removed from the fourth semi-finished substrate to obtain an open cover plate.
[0040] Combination Figure 5 As shown, Figure 5 This is a schematic diagram of a preset processing path used in the milling process according to an embodiment of this application; further explaining step S410, according to some embodiments of this application, the preset processing path 700 includes: an outer path 701 and an S-shaped path 702. It can be understood that the milling process is carried out along the outer path 701 to locate the opening area 106. Specifically, the S-shaped path 702 is spaced 5mm apart, which can save the milling cutter travel distance and time, and is beneficial for opening the cover.
[0041] Understandably, this application designs a guideline for the conductive router tool, adding an additional S-shaped cut on top of the outer perimeter of the router opening area 106. Specifically, as follows... Figure 5 The S-path spacing shown is 5mm, which is a good result. It can save the cutting distance and time of the milling cutter, while also achieving the opening effect and improving the efficiency of opening the lid.
[0042] According to some embodiments of this application, step S410 is further described. Step S410: The opening area of the second semi-finished substrate is processed by a conductive router based on a preset processing path to obtain a third semi-finished substrate including the stacked cover structure to be removed, including but not limited to steps S411 to S412.
[0043] Step S411: Place the second semi-finished substrate in the working area of the router.
[0044] Step S412: Control the conductive milling cutter to mill the opening area of the second semi-finished substrate along the preset processing path to obtain the third semi-finished substrate.
[0045] Combination Figure 6 and Figure 7 ,in, Figure 6 This is a side view schematic diagram of a third semi-finished substrate obtained according to an embodiment of this application; Figure 7 This is a top view schematic diagram of the third semi-finished substrate according to an embodiment of this application; specifically, the third semi-finished substrate 300 obtained after milling the opening area 106 of the second semi-finished substrate 200 according to the preset processing path 700 through steps S411 to S412 is as follows: Figure 6 and Figure 7 As shown.
[0046] The third semi-finished substrate 300 can be obtained through steps S411 to S412. The third semi-finished substrate 300 includes the initially separated stacked cover structure 800 to be removed, so that the stacked cover structure 800 to be removed can be further removed to obtain the open cover plate.
[0047] Combination Figure 8 , Figure 8 This is a schematic diagram of vacuum heating treatment via a vacuum tunnel furnace provided in one embodiment of this application; further, step S420 is described, wherein the third semi-finished substrate is sent into the vacuum tunnel furnace and vacuum heating treatment is performed on the third semi-finished substrate to obtain a heated fourth semi-finished substrate, including but not limited to steps S421 to S422.
[0048] Step S421: Determine the target heating temperature based on the type of the second dummy layer.
[0049] Step S422: Control the vacuum tunnel furnace to perform vacuum heating treatment on the third semi-finished substrate according to the target heating temperature to obtain the heated fourth semi-finished substrate.
[0050] It should be noted that a vacuum tunnel furnace 900, which can reach a maximum temperature of 260 degrees Celsius, is usually selected. This vacuum tunnel furnace 900 can ensure that there is no color difference in the board.
[0051] Specifically, the target heating temperature is selected by the plate material, and then the vacuum tunnel furnace 900 is controlled to operate at the target heating temperature, such as... Figure 8 As shown, the third semi-finished substrate 300 is input from one end of the vacuum tunnel furnace 900. During the process of passing through the vacuum tunnel furnace 900, the third semi-finished substrate 300 undergoes vacuum heating treatment. After heating, the bonding force between the copper-clad sub-region 1031 and the dielectric layer 1032 of the second dummy layer 103 in the heated fourth semi-finished substrate 400 is reduced. Then, the heated fourth semi-finished substrate 400 is output from the other end of the vacuum tunnel furnace 900 to facilitate subsequent removal processing.
[0052] Through steps S421 to S422, a fourth semi-finished substrate 400 with reduced bonding force between the copper-clad sub-region 1031 and the dielectric layer 1032 can be obtained, making subsequent removal processing easier.
[0053] According to some embodiments of this application, step S430 is further described. Step S430 involves removing the stacked cover structure to be removed from the fourth semi-finished substrate to obtain an open cover plate. This includes, but is not limited to, step S431. Step S431 involves tapping the heated fourth semi-finished substrate to separate the stacked cover structure to be removed from the heated fourth semi-finished substrate, thereby separating the copper surface of the copper-clad sub-region in the second dummy layer from the dielectric layer, thus obtaining an open cover plate. Since the bonding force between the dielectric layer 1032 of the stacked cover structure 800 to be removed and the copper surface of the copper-clad sub-region 1031 of the second dummy layer 103 is weakened, the stacked cover structure 800 can be separated from the heated fourth semi-finished substrate 400 by tapping or vibration.
[0054] According to some embodiments of this application, step S430 is further described. Step S430: The stacked cover structure to be removed from the fourth semi-finished substrate is removed to obtain an open cover plate, including but not limited to steps S432 to S433.
[0055] Step S432: Apply tape to the laminated cover structure to be removed from the heated fourth semi-finished substrate.
[0056] Step S433: By removing the adhesive tape, the adhered laminated cover structure to be removed is separated from the fourth semi-finished substrate, and the copper surface of the copper-clad sub-region in the second dummy layer is separated from the dielectric layer to obtain the open cover plate.
[0057] Specifically, such as Figure 9 As shown, through steps S432 to S433, the tape 500 is adhered to the laminated cover structure 800 to be removed from the heated fourth semi-finished substrate 400. Figure 9 As shown, after the tape 500 adheres to the laminated cover structure 800 to be removed, the adhered laminated cover structure 800 to be removed is separated from the fourth semi-finished substrate 400 by lifting the tape 500 upwards. This separates the adhered laminated cover structure 800 to be removed from the fourth semi-finished substrate 400, resulting in the tape 500 having the laminated cover structure 800 to be removed adhered to it, thus obtaining... Figure 10 The diagram shows the adhesion state between the tape and the laminated cover structure. After completing the opening process, the opening plate is obtained.
[0058] It is understood that step S431 is a specific embodiment of separating the laminated cover structure 800 from the fourth semi-finished substrate 400, and steps S432 to S433 are another specific embodiment of separating the laminated cover structure 800 from the fourth semi-finished substrate 400; one of them can be selected to perform the removal process.
[0059] Through steps S410 to S430, a routing process based on a preset processing path 700, a vacuum heating process, and a removal process are sequentially performed to open the cover region 106 on the second semi-finished substrate 200, thereby obtaining an open cover plate. Specifically, the routing process based on the preset processing path 700 and the vacuum heating process weaken the bonding force between the copper surface of the copper-plated sub-region 1031 and the dielectric layer 1032 in the second dummy layer 103. This allows for more efficient and convenient separation of the copper surface of the copper-plated sub-region 1031 and the dielectric layer 1032 during the removal process, while also reducing damage to the board, resulting in a high-quality open cover plate, and improving the success rate and efficiency of open cover plate manufacturing.
[0060] Combination Figure 2 , Figure 6 and Figure 9 It should be noted that when using pre-cured sheets to fabricate semi-flexible and recessed boards, the bonding force between the brown copper and the dielectric layer 1032 is strong. This application utilizes the characteristic that the bonding force between the copper surface and the dielectric layer 1032 is relatively weaker than that between the brown copper and the dielectric layer 1032 to precisely control the depth of the die-cutting, so as to preserve the thickness and integrity of the remaining dielectric layer 1032, thereby improving the bending reliability of the semi-flexible area and the depth uniformity of the recessed board. Furthermore, through the special processing technology of the vacuum tunnel furnace 900, the bonding force between the copper surface and the dielectric layer 1032 in the copper-clad area of the second dummy layer 103 is reduced, thereby improving the success rate of opening the cover and the manufacturing efficiency, and avoiding damage to the bottom dielectric layer 1032 caused by forced separation during the opening process.
[0061] Combination Figures 2 to 10 In the process of manufacturing the cover plate, through steps S100 to S400, the first dummy layer board is subjected to core board circuit pattern transfer processing to obtain the second dummy layer board 103. The second dummy layer board 103 includes a copper-clad sub-region 1031 corresponding to the cover area 106. Next, according to the preset stacked structure 100, the first core board 101, the first prepreg 102, the second dummy layer board 103, the second prepreg 104, and the second core board 105 are stacked and pressed from bottom to top to obtain the first semi-finished substrate. Then, the first semi-finished substrate is subjected to outer layer circuit pattern fabrication, outer layer solder mask fabrication, and outer layer silkscreen fabrication to obtain the second semi-finished substrate 200. Finally, the cover area 106 on the second semi-finished substrate 200 is opened to expose the copper-clad sub-region 1031 to obtain the cover plate. The opening process includes routing processing, vacuum heating processing, and removal processing based on the preset processing path 700. This application enables the dielectric layer 1032 in the second dummy layer 103 to bond with the first prepreg 102, one copper surface of the copper-plated sub-region 1031 in the second dummy layer 103 to bond with the dielectric layer 1032, and the other copper surface of the copper-plated sub-region 1031 in the second dummy layer 103 to bond with the second prepreg. Through router processing based on a preset processing path 700 and vacuum heating processing, the bonding force between the copper surface of the copper-plated sub-region 1031 and the dielectric layer 1032 in the second dummy layer 103 is weakened. This allows for more efficient and convenient separation of the copper surface of the copper-plated sub-region 1031 from the dielectric layer 1032 during removal, while also reducing damage to the board, resulting in a high-quality open-face plate, and improving the success rate and efficiency of open-face plate manufacturing. In other words, the embodiments of this application can improve the success rate and efficiency of open-face plate manufacturing, and improve the quality of the manufactured open-face plate.
[0062] For example, combined with Figures 2 to 10The manufacturing process of the cover plate manufacturing method of this application is described as follows: the core plate pattern is transferred from the first dummy layer plate to obtain the second dummy layer plate 103 → the first core plate 101, the first prepreg 102, the second dummy layer plate 103, the second prepreg 104 and the second core plate 105 are stacked and pressed together → the outer layer pattern is transferred and the solder resist is screen printed → the conductive depth is controlled to minimize the cover size → it passes through a vacuum tunnel oven 900 → the cover is opened or knocked open with tape 500. Through this manufacturing process, this application uses a pre-defined stacked structure for lamination and pressing, changing the prepreg structure corresponding to the opening position to a structure of prepreg plus a dummy layer plus a prepreg. The dummy layer only retains the copper corresponding to the opening area. Because the copper-clad area of the dummy layer and the prepreg below have a strong bonding force under vacuum pressure, it is difficult to open the cover by only using the conductive router. Forcibly opening the cover will damage the dielectric layer around the board and at the bottom. To solve the problems of easy opening and dielectric layer thickness and integrity, further, by precisely controlling the special router's cutting path and the heating of the vacuum tunnel oven, the bonding force between the copper surface of the dummy layer and the dielectric layer is reduced, making it more efficient and convenient to separate the copper surface of the dummy layer from the dielectric layer.
[0063] Secondly, embodiments of this application provide a cover plate, which is prepared by a cover plate manufacturing method as described in any one of the embodiments of the first aspect. The cover plate manufacturing method includes: performing core board circuit pattern transfer processing on a first dummy layer board to obtain a second dummy layer board; wherein the second dummy layer board includes a copper-clad sub-region corresponding to the cover area; according to a preset stacking structure, stacking and pressing a first core board, a first prepreg, a second dummy layer board, a second prepreg, and a second core board from bottom to top to obtain a first semi-finished substrate; sequentially performing outer layer circuit pattern fabrication, outer layer solder mask fabrication, and outer layer silkscreen fabrication on the first semi-finished substrate to obtain a second semi-finished substrate; after performing router processing, vacuum heating processing, and removal processing based on a preset processing path on the cover area of the second semi-finished substrate, the copper-clad sub-region is exposed, resulting in a high-quality cover plate; the cover plate provided by embodiments of this application has a high success rate and manufacturing efficiency, and the cover plate has good quality.
[0064] The above provides a detailed description of the preferred embodiments of this application. However, this application is not limited to the above-described embodiments. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of this application. All such equivalent modifications or substitutions are included within the scope defined by this application.
Claims
1. A method for manufacturing a cover plate, characterized in that, include: The first dummy layer board is subjected to core board circuit pattern transfer processing to obtain the second dummy layer board; wherein, the second dummy layer board includes: a copper-clad sub-region corresponding to the open cover area; According to the preset stacked structure, the first core board, the first prepreg, the second dummy layer, the second prepreg, and the second core board are stacked and pressed together from bottom to top to obtain the first semi-finished substrate. The first semi-finished substrate is sequentially processed with outer layer circuit pattern fabrication, outer layer solder mask fabrication and outer layer silk screen printing to obtain the second semi-finished substrate. The copper-clad sub-region on the second semi-finished substrate is exposed by an opening process to obtain an open cover plate; wherein the opening process includes a router process based on a preset processing path, a vacuum heating process, and a removal process.
2. The method for manufacturing a cover plate according to claim 1, characterized in that, The process of transferring the core board circuit pattern of the first dummy layer board to obtain the second dummy layer board includes: A first dummy layer is provided, the first dummy layer comprising a copper layer and a dielectric layer; The copper-clad layer of the first dummy layer is etched to obtain a second dummy layer including the copper-clad sub-region and the dielectric layer; wherein the copper-clad sub-region is formed after etching the copper-clad layer.
3. The method for manufacturing the cover plate according to claim 2, characterized in that, The step of opening the capping area on the second semi-finished substrate to expose the copper-clad sub-area, thereby obtaining an open cap plate, includes: The second semi-finished substrate is subjected to a milling process based on a preset processing path in the opening area of the conductive milling method to obtain a third semi-finished substrate including a stacked cover structure to be removed; wherein, the stacked cover structure to be removed includes: the dielectric layer above the opening area, the second prepreg and the second core board. The third semi-finished substrate is sent into a vacuum tunnel furnace and subjected to vacuum heating treatment to obtain a heated fourth semi-finished substrate; wherein, the bonding force between the copper-clad sub-region of the second dummy layer and the dielectric layer is reduced in the heated fourth semi-finished substrate. The stacked cover structure to be removed from the fourth semi-finished substrate is removed to obtain the open cover plate.
4. The method for manufacturing a cover plate according to claim 3, characterized in that, The step of performing a milling process on the opening area of the second semi-finished substrate using a conductive milling method based on a preset processing path to obtain a third semi-finished substrate including the stacked cover structure to be removed includes: Place the second semi-finished substrate in the working area of the milling machine; The conductive milling cutter is controlled to mill the opening area of the second semi-finished substrate along a preset processing path to obtain the third semi-finished substrate.
5. The method for manufacturing a cover plate according to claim 4, characterized in that, The preset processing path includes: the outer path and the S-shaped path.
6. The method for manufacturing a cover plate according to claim 3, characterized in that, The process of removing the stacked cover structure to be removed from the fourth semi-finished substrate to obtain the cover plate includes: The heated fourth semi-finished substrate is tapped to separate the stacked cover structure to be removed from the heated fourth semi-finished substrate, thereby separating the copper surface of the copper-clad sub-region in the second dummy layer from the dielectric layer, thus obtaining the open cover plate.
7. The method for manufacturing a cover plate according to claim 3, characterized in that, The process of removing the stacked cover structure to be removed from the fourth semi-finished substrate to obtain the cover plate includes: The tape is applied to the laminated cover structure to be removed from the heated fourth semi-finished substrate. By removing the adhesive tape, the adhered laminated cover structure to be removed is separated from the fourth semi-finished substrate, and the copper surface of the copper-clad sub-region in the second dummy layer is separated from the dielectric layer, thus obtaining the open cover plate.
8. The method for manufacturing a cover plate according to claim 3, characterized in that, The step of feeding the third semi-finished substrate into the vacuum tunnel furnace and subjecting the third semi-finished substrate to vacuum heating treatment to obtain a heated fourth semi-finished substrate includes: The target heating temperature is determined based on the type of material used in the second dummy layer. The vacuum tunnel furnace is controlled to perform vacuum heating treatment on the third semi-finished substrate according to the target heating temperature to obtain the heated fourth semi-finished substrate.
9. The method for manufacturing a cover plate according to claim 1, characterized in that, The number of the openable areas is at least one.
10. A cover plate, characterized in that, It is prepared by the method of making the cover plate as described in any one of claims 1 to 9.