Structure for increasing single-time sheet making amount of planetary plate
By designing a circular carrier disk and support structure on the planetary disk, the number of wafers that can be deposited in a single evaporation process is increased, solving the problems of insufficient production capacity and high material costs, achieving increased production capacity and cost savings, while ensuring the quality of the film layer.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHANGCHUN CHANGGUANG YUANCHEN MICROELECTRONICS TECH CO LTD
- Filing Date
- 2025-12-17
- Publication Date
- 2026-04-21
AI Technical Summary
In the current evaporation stage, each planetary disk can only hold 6 wafers during the evaporation process, resulting in insufficient production capacity and high material costs. There is a lack of effective methods to increase the number of wafers produced per batch.
Design a planetary disk structure to increase the number of wafers produced at one time, including a circular carrier disk and a support. The support consists of multiple supports connected to the outer circumference of the planetary disk. The edge of the carrier disk has protrusions. The support is made of metal. More wafers can be loaded by increasing the number of carrier disks. Stable fixation is achieved by connecting the supports and screws.
The number of wafers per operation increased from 18 to 21, boosting the evaporation stage capacity by 16% while saving 16% in material costs, and the quality of the metal film remained unaffected.
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Figure CN121896591A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor technology, and in particular to a planetary disk structure for increasing the number of wafers produced per cycle. Background Technology
[0002] With the increasing demands of semiconductor manufacturing technology, a back-gold coating process is required during wafer fabrication to achieve conductivity. Due to the dual requirements of electrical performance, efficiency, and cost, different methods are used to coat the metal layer. Vapor deposition is a commonly used technique in the industry. However, due to limitations in chamber space and wafer size, evaporation stations can typically only hold three planetary disks, with each disk holding only six wafers. This means that only 18 wafers can be processed in a single evaporation cycle. Increasing the number of wafers processed would not only improve production capacity but also save costs. However, currently, there is no clearly defined method in the industry to increase the number of wafers processed in a single cycle.
[0003] During the vapor deposition process, the planetary disks in the evaporation stage serve to load the wafers and adjust the uniformity of the film layer. This ensures wafer stability while also guaranteeing film quality through curvature adjustment. Currently, the situation both domestically and internationally is as follows: a standard 8-inch wafer evaporation stage can only hold three planetary disks, and each disk can only hold six wafers.
[0004] Based on the above-mentioned technical problems, those skilled in the art urgently need to develop a simple structure and method for increasing the production capacity of a single evaporation stage, saving material costs per run, and not affecting the quality of the metal film, which can increase the amount of film produced per run by a planetary disk. Summary of the Invention
[0005] The purpose of this invention is to provide a simple structure and method for increasing the amount of metal film produced per cycle using a planetary disk, which can increase the production capacity of a single evaporation stage, save on material costs per cycle, and does not affect the quality of the metal film.
[0006] To achieve the above objectives, the present invention provides the following technical solution: The present invention provides a planetary disk structure for increasing the amount of wafers produced in a single pass. This structure can be placed in a vapor deposition machine, and the wafer production structure includes: Planetary disks; and The carrier disk arranged in the planetary disk is configured as a circular structure; The support has multiple supports, all of which are connected to the planetary disk and are evenly distributed on the outer circumference of the disk.
[0007] Preferably, the carrier disk has a raised ring around its edge, and both the carrier disk and the support are made of metal.
[0008] Furthermore, the support includes a triangular base having three legs; and A cylindrical support rod is installed at the center of the triangular seat; Three conical cylindrical support rods are respectively connected to the ends of the three legs, and the bottom of the conical cylindrical support rods is connected to the planetary disk.
[0009] Preferably, a bushing matching the conical cylindrical support rod is provided on the outer side of the planetary disk; Furthermore, the end of the bushing furthest from the planetary disk is provided with a triangular arc-shaped cylindrical rod.
[0010] Preferably, all three conical cylindrical support rods are connected to the triangular seat by first internal hexagonal head screws; The cylindrical support rod is connected to the triangular seat by a second internal hexagonal head screw.
[0011] In the above technical solution, the present invention provides a structure for increasing the amount of material processed in a single operation on a planetary disk, which has the following beneficial effects: The present invention provides a planetary disk structure for increasing the number of wafers processed in a single operation. By incorporating a carrier disk structure, the number of wafers processed in a single operation can be increased from 18 to 21 without affecting the quality of the metal film. Furthermore, the present invention can be placed in a standard 8-inch vapor deposition machine, which can both increase the machine's output and save materials, thereby reducing costs and increasing efficiency. It can increase the capacity of a single evaporation station by 16% and save 16% of the material cost per operation. Attached Figure Description
[0012] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this invention. For those skilled in the art, other drawings can be obtained based on these drawings.
[0013] Figure 1 This is a schematic diagram of the overall structure of a planetary disk structure for increasing the amount of material processed in a single operation, provided by an embodiment of the present invention. Figure 2 A top view of a structure for increasing the amount of material to be processed in a single operation on a planetary disk, provided in an embodiment of the present invention; Figure 3 This invention provides a structure for increasing the amount of material processed in a single operation on a planetary disk. Figure 2 A cross-sectional view at point AA.
[0014] Explanation of reference numerals in the attached figures: 1. Planetary disk; 2. Carrier disk; 3. Support; 4. Bushing; 5. Triangular arc-shaped cylindrical rod; 301. Triangular base; 302. Cylindrical support rod; 303. Conical cylindrical support rod; 304. First internal hexagonal head screw; 305. Second internal hexagonal head screw. Detailed Implementation
[0015] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.
[0016] See Figures 1-3 As shown; The present invention provides a structure for increasing the amount of material processed in a single process for a planetary disk, the structure comprising: This structure can be placed in a vapor deposition machine, and the wafer fabrication structure includes: Planetary disk 1; and The carrier disk 2, arranged in the planetary disk 1, is configured as a circular structure and is the size of an 8-inch wafer. The support 3 has multiple supports, all of which are connected to the planetary disk 1 and are evenly distributed on the outer circumference of the carrier disk 2.
[0017] As a preferred technical solution in this embodiment, the edge of the carrier 2 is provided with a ring of protrusions, and both the carrier 2 and the support 3 are made of metal material.
[0018] As a further description of this embodiment, the bracket 3 includes a triangular base 301, which has three legs; and A cylindrical support rod 302 is disposed at the center of the triangular base 301; Three conical cylindrical support rods 303 are connected to the ends of the three legs, and the bottom of the conical cylindrical support rods 303 is connected to the planetary disk 1. Specifically, in this embodiment, the planetary disk with six external wafers remains unchanged, but a carrier disk 2 is added in the inner middle area to hold the additional wafer. The carrier disk 2 has three conical cylindrical support rods 303 and a spring clip on its edge to fix the wafer. The three conical cylindrical support rods 303 are slightly bent inward to prevent the wafer from falling off during the rotation of the planetary disk 1. The spring clip is used to fix the wafer and also serves as a channel for loading and unloading the wafer onto the carrier disk 2. The carrier disk 2 is designed with a raised edge structure to prevent scratches on the wafer. There are three openings on the edge of the carrier disk 2 for connecting a bracket 3. The planetary disk 1 can be placed into the evaporation stage cavity through the bracket 3, and the planetary disk 1 can also be removed through the bracket 2.
[0019] As a preferred technical solution in this embodiment, a bushing 4 matching the conical cylindrical support rod 303 is provided on the outer side of the planetary disk 1; Furthermore, the end of the bushing 4 furthest from the planetary disk 1 is provided with a triangular arc-shaped cylindrical rod 5.
[0020] As a preferred technical solution in this embodiment, all three conical cylindrical support rods 303 are connected to the triangular seat 301 by first internal hexagonal head screws 304; The cylindrical support rod 302 is connected to the triangular seat 301 by a second internal hexagonal head screw 305.
[0021] The present invention provides a structure for increasing the amount of material processed in a single planetary disk operation, and the specific usage process is as follows: 1. Prepare the following materials: carrier tray, support, evaporation stage, and wafer. Wear all protective equipment and ensure the materials are clean and meet usage requirements.
[0022] 2. First, use a pick-up pen to place the wafer into the carrier tray. After that, cover the tray with the cover plate and press down the clamping claws.
[0023] 3. Use the support bracket to insert the tray into the evaporation platform and secure it with clips to prevent the tray from falling off. After loading the tray, switch the machine to automatic mode and rotate the tray to confirm that there are no abnormalities in the loading process.
[0024] 4. Start the evaporation platform to carry out the vapor deposition process. During the vapor deposition process, the tray should be rotated to confirm the uniformity of the vapor deposition film.
[0025] 5. After the vapor deposition is complete, use a support to remove the tray, and then use a suction pen to remove the wafers one by one.
[0026] The foregoing has only described certain exemplary embodiments of the present invention by way of illustration. Undoubtedly, those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the foregoing drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.
Claims
1. A structure for increasing the amount of material processed in a single operation on a planetary disk, characterized in that, This structure can be placed in a vapor deposition machine, and the wafer fabrication structure includes: Planetary disk (1); and The carrier disk (2) arranged in the planetary disk (1) is configured as a circular structure; The support (3) has multiple supports, all of which are connected to the planetary disk (1) and are evenly distributed on the outer circumference of the carrier disk (2).
2. The structure for increasing the amount of material processed in a single operation on a planetary disk according to claim 1, characterized in that, The carrier (2) has a raised ring at its edge, and both the carrier (2) and the support (3) are made of metal.
3. The structure for increasing the amount of material processed in a single operation on a planetary disk according to claim 1, characterized in that, The bracket (3) includes a triangular base (301) having three legs; and A cylindrical support rod (302) is provided at the center of the triangular base (301); Three conical cylindrical support rods (303) are respectively connected to the ends of the three legs, and the bottom of the conical cylindrical support rods (303) is connected to the planetary disk (1).
4. The structure for increasing the amount of material processed in a single operation on a planetary disk according to claim 3, characterized in that, The planetary disk (1) is provided with a bushing (4) that matches the conical cylindrical support rod (303) on its outer side. Furthermore, the end of the bushing (4) away from the planetary disk (1) is provided with a triangular arc-shaped cylindrical rod (5).
5. A structure for increasing the amount of material processed in a single operation on a planetary disk according to claim 3, characterized in that, All three conical cylindrical support rods (303) are connected to the triangular seat (301) by first internal hexagonal head screws (304); The cylindrical support rod (302) is connected to the triangular seat (301) by a second internal hexagonal head screw (305).