Film forming apparatus and film forming method

Abstract

The film forming apparatus includes: an alignment member that adjusts relative positions of a substrate and a mask on the basis of measurement results of alignment marks formed on the substrate and the mask, respectively; and an adjusting member that adjusts the relative positions of the substrate and the mask on the basis of the measurement result, and forms a film on the vapor deposition material via the mask on the film formation surface of the substrate adsorbed to the electrostatic chuck. The film forming apparatus is provided with a static electricity eliminating device which eliminates static electricity on the film forming surface of the substrate before the substrate and the mask approach each other by adjusting the position of the adjusting member.

Description

Technical Field

[0001] This invention relates to a film-forming apparatus and a film-forming method for forming films on a substrate. Background Technology

[0002] Patent Document 1 discloses a film-forming apparatus comprising: an electrostatic chuck for adsorbing a substrate, a mechanism for aligning the substrate adsorbed on the electrostatic chuck and a mask placed on a mask stage, and an adjustment mechanism for adjusting the relative tilt of the electrostatic chuck and the mask stage.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-57673 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] When the substrate's film-forming surface is charged, and the mask is brought close to the substrate for alignment, the charge on the film-forming surface can cause the mask to be lifted and come into contact with the substrate's film-forming surface. With the film-forming surface charged, accurate alignment cannot be achieved even during alignment, leading to obstacles such as an increase in the number of alignment attempts or failure to converge to the intended alignment position.

[0008] In order to enable a smooth alignment operation, it is preferable to remove static electricity from the film-forming surface of the substrate before bringing the mask and substrate closer together by adjusting their relative positions.

[0009] In view of the above-mentioned problems, the present invention provides a technique for removing static electricity from the film-forming surface of a substrate before the mask and substrate are brought close together by adjusting the relative positions of the mask and substrate.

[0010] Methods for solving problems

[0011] One aspect of the film-forming apparatus of the present invention includes an adjustment member that adjusts the relative position of the substrate and the mask based on measurements of alignment marks formed on the substrate and the mask, respectively. The film-forming apparatus forms a film of a vapor-deposited material on the film-forming surface of the substrate, which is adsorbed onto an electrostatic chuck, via the mask. The apparatus is characterized in that...

[0012] The film-forming apparatus includes an antistatic component. By adjusting the position of the adjusting component, the antistatic component removes static electricity from the film-forming surface of the substrate before the substrate and the mask approach each other.

[0013] Invention Effects

[0014] According to the present invention, static electricity removal of the film-forming surface of the substrate can be performed before the mask and substrate are brought close together by adjusting the relative positions of the mask and substrate. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of a part of an electronic device production line.

[0016] Figure 2 This is a schematic diagram of a film-forming apparatus according to one embodiment.

[0017] Figure 3 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 1.

[0018] Figure 4 This is a diagram illustrating the structure of an antistatic device in a film-forming apparatus according to an embodiment, as shown in Example 2.

[0019] Figure 5 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 3.

[0020] Figure 6 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 4.

[0021] Figure 7 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 5.

[0022] Figure 8 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 6.

[0023] Figure 9 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 7.

[0024] Figure 10 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, Example 8.

[0025] Figure 11 This is a diagram illustrating the overall processing flow performed by the film-forming apparatus of the embodiment. Detailed Implementation

[0026] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments do not limit the scope of the invention as defined by the claims. While multiple features are described in the embodiments, these features are not limited to those essential to the invention, and multiple features can be arbitrarily combined. In the accompanying drawings, the same or identical structures are labeled with the same reference numerals, and repeated descriptions are omitted.

[0027] <Electronic Component Production Line>

[0028] Figure 1 This is a schematic diagram showing a portion of the structure of an electronic device production line to which the film-forming apparatus of the present invention can be applied. Figure 1 In production lines, such as those used to manufacture display panels for organic EL display devices, substrates 100 are sequentially fed to a film deposition module 301, where organic EL elements are deposited on the substrates 100. Figure 1 In the diagram, arrow Z indicates the vertical direction (direction of gravity), and arrows X and Y indicate mutually orthogonal horizontal directions. Additionally, in all diagrams, G represents grounding.

[0029] In the film deposition module 301, a plurality of film deposition chambers 303a-303d for film deposition processing on the substrate 100 and a mask storage chamber 305 for storing masks before and after use are arranged around the transport chamber 302, which has an octagonal shape when viewed from above. A transport robot 302a for transporting the substrate 100 is arranged in the transport chamber 302. The transport robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that can move the hand in the horizontal and vertical directions. In other words, the film deposition module 301 is a group-type film deposition unit in which a plurality of film deposition chambers 303a-303d are arranged around the transport robot 302a. It should be noted that the film deposition chambers 303a-303d are collectively referred to as film deposition chambers 303a-303d, or, if no distinction is made, they are referred to as film deposition chamber 303.

[0030] Along the transport direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a transfer chamber 308 are respectively arranged on the upstream and downstream sides of the film deposition module 301. During manufacturing, each chamber is maintained in a vacuum state. It should be noted that... Figure 1 Only one film-forming module 301 is illustrated, but the production line of this embodiment has multiple film-forming modules 301, which are connected by a connecting device consisting of a buffer chamber 306, a swirl chamber 307, and a transfer chamber 308. It should be noted that the structure of the connecting device is not limited to this; for example, it may consist of only the buffer chamber 306 or the transfer chamber 308.

[0031] The conveying robot 302a performs the following: feeding the substrate 100 from the upstream transfer chamber 308 to the conveying chamber 302; conveying the substrate 100 between the film forming chambers 303; conveying the mask between the mask storage chamber 305 and the film forming chamber 303; and feeding the substrate 100 from the conveying chamber 302 to the downstream buffer chamber 306.

[0032] The buffer chamber 306 is a chamber for temporarily storing substrates 100 according to the operating conditions of the production line. A substrate storage rack, also referred to as a housing, and a lifting mechanism are provided in the buffer chamber 306. The substrate storage rack has a multi-layer structure capable of storing multiple substrates 100 in a horizontal state with the processed surface (film-forming surface) of the substrate 100 facing downwards in the direction of gravity. The lifting mechanism raises and lowers the substrate storage rack to align the layer of substrates 100 being fed in or out with the transport position. Thus, multiple substrates 100 can be temporarily housed and held in the buffer chamber 306.

[0033] The swirl chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the orientation of the substrate 100 is rotated 180 degrees by a transport robot 307a disposed in the swirl chamber 307. The transport robot 307a includes a hand that holds the substrate 100 and a multi-joint arm that can move the hand in the horizontal and vertical directions. The transport robot 307a disposed in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and hands it over to the transfer chamber 308, thereby swapping the front and rear ends of the substrate in the buffer chamber 306 and the transfer chamber 308. As a result, the orientation of the substrate 100 when it is fed into the film deposition chamber 303 is the same in each film deposition module 301, thus making it possible to make the scanning direction of the evaporation source relative to the substrate 100 and the orientation of the mask consistent in each film deposition module 301. By adopting such a structure, the orientation of the masks placed in the mask storage chamber 305 can be consistent in each film-forming module 301, which simplifies mask management and improves availability.

[0034] The production line control system includes a host computer 300 that controls the entire production line as a main computer, and control devices 14a-14d, 309, and 310 that control various structures. These devices can communicate via wired or wireless communication line 300a. Control devices 14a-14d are correspondingly arranged with film-forming chambers 303a-303d and control the film-forming apparatus 1, which will be described later. It should be noted that, when collectively referred to as control devices 14a-14d, or, if not distinguished, as control device 14.

[0035] The control device 14 controls the entire film-forming apparatus 1. The control device 14 includes a processing unit 1, a storage unit, an input / output interface (I / O), and a communication unit. The processing unit, represented by a CPU, is a processor that executes programs stored in the storage unit to control the film-forming apparatus 1. The storage unit is a storage device such as ROM, RAM, or HDD, which stores various control information in addition to the programs executed by the processing unit. The I / O is the interface for sending and receiving signals between the processing unit and the various components of the film-forming apparatus 1. The communication unit is a communication device that communicates with the host device 300 or other control devices 14, 309, 310, etc., via a communication line. The processing unit receives information from or sends information to the host device 300 via the communication unit. It should be noted that all or part of the control device 14 and the host device 300 can also be composed of a PLC, ASIC, or FPGA.

[0036] Control device 309 controls conveying robot 302a. Control device 310 controls the device of rotary chamber 307 and conveying robot 307a. Host device 300 sends information related to substrate 100, conveying timing and other instructions to each control device 14, 309 and 310, and each control device 14, 309 and 310 controls each structure based on the received instructions.

[0037] <Overview of the film-forming device>

[0038] Figure 2 This is a schematic diagram of a film-forming apparatus 1 according to one embodiment. The film-forming apparatus 1, provided in the film-forming chamber 303, is an apparatus for depositing vapor-deposited material on a substrate 100, forming a thin film of vapor-deposited material with a predetermined pattern via a mask 101. The material of the substrate 100 in which film formation is performed in the film-forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal; preferably, a material with a resin layer such as polyimide formed on glass is used. The vapor-deposited material can be organic materials, inorganic materials (metals, metal oxides, etc.), etc. The film-forming apparatus 1 can be applied to manufacturing apparatuses for electronic devices and optical components such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and particularly to manufacturing apparatuses for organic EL panels. In the following description, an example of film formation on a substrate 100 by vacuum vapor deposition using the film-forming apparatus 1 will be described, but this embodiment is not limited to this and can also be applied to various film-forming methods such as sputtering or CVD.

[0039] The film-forming apparatus 1 has a box-shaped vacuum chamber 3 (also simply referred to as a chamber) capable of maintaining an internal vacuum. The internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). It should be noted that, in this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure, in other words, a depressurization state. Inside the internal space 3a of the vacuum chamber 3, a substrate support unit 6 that supports the substrate 100 in a horizontal position, a mask stage 5 that supports the mask 101, a film-forming unit 4, a plate unit 9, and an electrostatic chuck 15 are arranged. The mask 101 is a metal mask having an opening pattern corresponding to the thin film pattern formed on the substrate 100, and is placed on the mask stage 5. It should be noted that the mask stage 5 can be replaced with other components that fix the mask 101 in a predetermined position. As the mask 101, for example, a mask foil with a thickness of 10 μm or more and 100 μm or less, having a frame-shaped mask frame, can be used. The material of the mask 101 is not particularly limited; for example, a metal with a low coefficient of thermal expansion, such as Invar alloy, can also be used. The film deposition process is performed with the substrate 100 placed on the mask 101 and the substrate 100 and mask 101 overlapping each other.

[0040] The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 in a manner that allows it to be displaced relative to the magnet plate 11 in the Z direction. The cooling plate 10 has the function of cooling the substrate 100 adsorbed on the electrostatic chuck 15 during film formation by contacting it during film formation. The cooling plate 10 is not limited to actively cooling the substrate 100 by having a water cooling mechanism or the like; it may also be a plate-shaped component that absorbs heat from the substrate 100 by contacting the electrostatic chuck 15 without having a water cooling mechanism or the like. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force and is placed on the upper surface of the substrate 100, thereby improving the adhesion between the substrate 100 and the mask 101 during film formation.

[0041] It should be noted that the cooling plate 10 and the magnet plate 11 can be omitted. For example, if the electrostatic chuck 15 is equipped with a cooling mechanism, the cooling plate 10 may not be required. Additionally, if the electrostatic chuck 15 adsorbs the mask 101, the magnet plate 11 may also be omitted.

[0042] The film-forming unit 4, comprising a heater, baffles, a drive mechanism for the evaporation source, and an evaporation rate monitor, is a deposition source for depositing the material onto the substrate 100. More specifically, in this embodiment, the film-forming unit 4 is a linear evaporation source from which multiple nozzles (not shown) are arranged in the X direction, and the material to be deposited is emitted from each nozzle. For example, the linear evaporation source is reciprocated in the Y direction (depth direction of the device) by an evaporation source moving mechanism (not shown). In this embodiment, the film-forming unit 4 is disposed in the vacuum chamber 3 where the alignment process described later is performed. However, in embodiments where the film-forming process is performed in a different chamber than the vacuum chamber 3 where alignment is performed, the film-forming unit 4 is not disposed in the vacuum chamber 3.

[0043] The substrate support unit 6 supports the peripheral portion of the substrate 100. The substrate support unit 6 includes multiple bases 61 and multiple substrate support portions 62 protruding inward from the bases 61. It should be noted that the substrate support portions 62 are sometimes also referred to as "receiving claws" or "substrate support claws". The bases 61 are each supported by a support shaft R3. The substrate 100, fed into the film forming apparatus 1 by the transport robot 302a, is supported by the multiple substrate support portions 62.

[0044] In this embodiment, the plurality of substrate support portions 62 are composed of leaf springs. When the substrate 100 supported by the plurality of substrate support portions 62 is attracted to the electrostatic chuck 15, the periphery of the substrate 100 can be pressed against the electrostatic chuck 15 by the elastic force of the leaf springs.

[0045] An electrostatic chuck 15 adsorbs the substrate 100. In this embodiment, the electrostatic chuck 15 is disposed between the substrate support unit 6 and the plate unit 9 and is supported by one or more support shafts R1. In one embodiment, the support shaft R1 is a cylindrical shaft.

[0046] The electrostatic chuck 15 includes, for example, a structure in which circuitry such as metal electrodes are embedded within a ceramic substrate (also referred to as the substrate). The surface of the electrostatic chuck 15 can be polyimide (resin) or can be anodized aluminum. In this embodiment, the electrostatic chuck 15 has multiple electrode portions. The electrode portions include electrodes to which a positive (+) voltage is applied and electrodes to which a negative (-) voltage is applied. When a voltage is applied to each electrode, polarization charges are induced on the substrate 100 through the ceramic substrate, and the film-forming surface 100a of the substrate 100 is adsorbed and fixed by the adsorption surface 150 of the electrostatic chuck 15 using the electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15.

[0047] In addition, multiple openings are formed on the electrostatic chuck 15, and the measurement units (first measurement unit 7 and second measurement unit 8) described later take pictures of the alignment marks described later through the multiple openings, thereby obtaining information related to the relative positional relationship between the substrate 100 and the mask 101.

[0048] The position adjustment unit 20 adjusts the relative position of the substrate 100, which is supported by the substrate support unit 6 at its periphery, or the substrate 100, which is attracted by the electrostatic chuck 15, and the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 in the XY plane. That is, the position adjustment unit 20 can also be described as a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in the X and Y directions and can rotate it about the Z-axis. In this embodiment, the position of the mask 101 is fixed, and the relative position of the substrate 100 is adjusted by displacing it. However, it is also possible to adjust the relative position by displacing the mask 101, or by displacing both the substrate 100 and the mask 101. For example, the position adjustment unit 20 can also displace the substrate support unit 6 using a known structure such as a motor as a drive source and a ball screw mechanism that converts the motor's driving force into linear motion.

[0049] The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask stage 5 by raising and lowering them, so that the substrate 100 and the mask 101 approach and move away (separate) in the thickness direction (Z direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lifting plate 220, which supports the electrostatic chuck 15 via multiple support shafts R1 and supports the substrate support unit 6 via multiple support shafts R3. The distance adjustment unit 22 raises and lowers the electrostatic chuck 15 and the substrate support unit 6 by raising and lowering the first lifting plate 220. That is, the distance adjustment unit 22 makes the substrate 100 and the mask 101 approach each other in the overlapping direction or move away from each other in the opposite direction. It should be noted that the "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or vertical distance), and the distance adjustment unit can also be described as a unit that adjusts the vertical position of the mask 101 and the substrate 100. For example, the position adjustment unit 20 can also displace the first lifting plate 220 using a known structure such as a motor as a drive source and a ball screw mechanism that converts the motor's driving force into linear motion. Additionally, the distance adjustment unit 22 includes an actuator 65 that moves the substrate support unit 6 relative to the first lifting plate 220, thereby changing the relative position of the substrate support unit 6 relative to the electrostatic chuck 15. The measurement units (first measurement unit 7 and second measurement unit 8), the position adjustment unit 20, and the distance adjustment unit 22 function as adjustment mechanisms (7, 8, 20, 22), adjusting the relative positions of the substrate 100 and the mask 101 based on the measurement results of alignment marks formed on the substrate 100 and the mask 101, respectively.

[0050] It should be noted that in this embodiment, the distance adjustment unit 22 fixes the position of the mask stage 5 and moves the substrate support unit 6 and the electrostatic chuck 15 to adjust their distance in the Z direction, but it is not limited to this. The position of the substrate support unit 6 or the electrostatic chuck 15 can also be fixed and the mask stage 5 can be moved for adjustment, or the substrate support unit 6, the electrostatic chuck 15 and the mask stage 5 can be moved separately to adjust their distance from each other.

[0051] The plate unit lifting unit 13 lifts and lowers the plate unit 9, which is connected to the second lifting plate 12 and disposed inside the vacuum chamber 3, by lifting and lowering the second lifting plate 12 disposed outside the vacuum chamber 3. The plate unit 9 is connected to the second lifting plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lifting plate 12 through the openings of the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening of the first lifting plate 220. For example, the position adjustment unit 20 may also move the second lifting plate 12 using a known structure such as a motor as a drive source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0052] The openings of the upper wall portion 30 of the vacuum chamber 3 through which the aforementioned support shafts R1 to R3 pass have the magnitude of displacement in both the X and Y directions. In order to maintain the airtightness of the vacuum chamber 3, bellows or the like are provided at the openings of the upper wall portion 30 through which the support shafts R1 to R3 pass.

[0053] The measuring units (first measuring unit 7 and second measuring unit 8) measure the positional offset between the substrate 100 and the mask 101, whose peripheral portions are supported by the substrate support unit 6. In this embodiment, both the first measuring unit 7 and the second measuring unit 8 are imaging devices (cameras) for capturing images. The first measuring unit 7 and the second measuring unit 8 are disposed above the upper wall portion 30 and are capable of capturing images inside the vacuum chamber 3 through a window (not shown) formed in the upper wall portion 30.

[0054] In this embodiment, alignment marks for aligning the substrate 100 and the mask 101 are formed on the substrate 100 and the mask 101, respectively. Furthermore, coarse alignment marks for making approximate position adjustments and fine alignment marks for making more precise position adjustments are provided on the substrate 100 and the mask 101, respectively.

[0055] The first measurement unit 7 is a low-magnification CCD camera (coarse camera) with a relatively wide field of view but low resolution, which measures the approximate positional offset of the substrate 100 and the mask 101. For example, two first measurement units 7 are provided to take pictures of coarse alignment marks respectively located near the center of the short side of the substrate 100 and the mask 101 via the opening 152.

[0056] The second measurement unit 8 is a high-magnification CCD camera (fine camera) with a relatively narrow field of view but high resolution (e.g., on the order of several μm), which measures the positional offset of the substrate 100 and the mask 101 with high precision. For example, four second measurement units 8 are provided to take pictures of the precision alignment marks respectively provided at the four corners of the substrate 100 and the mask 101 via the opening 152.

[0057] In this embodiment, after the approximate position adjustment of the substrate 100 and the mask 101 is performed based on the measurement results of the first measurement unit 7, the precise position adjustment of the substrate 100 and the mask 101 is performed based on the measurement results of the second measurement unit 8.

[0058] The film deposition apparatus 1 of this embodiment has an upward deposition type structure (during film deposition, the film deposition surface of the substrate 100 faces the vertically downward side, and the film deposition surface 100a of the substrate 100 faces the vertically upward side). In the upward deposition type film deposition apparatus 1, the back side (the side facing the vertically upward side) of the film deposition surface 100a of the substrate 100 is the adsorption surface that is adsorbed by the electrostatic chuck 15; in other words, it is the contact surface where the electrostatic chuck 15 contacts the substrate 100. In the film deposition apparatus 1, the vertically upward side of the substrate 100 is the film deposition surface 100a, and the vertically downward side of the substrate 100 is the film deposition surface. The film deposition apparatus 1 forms a thin film of vapor-deposited material with a predetermined pattern on the film deposition surface of the substrate via a mask 101.

[0059] The adjustment mechanisms (7, 8, 20, 22) of the film forming apparatus 1 adjust the relative positions of the substrate 100 and the mask 101 based on the measurement results of the alignment marks formed on the substrate 100 and the mask 101 respectively. The film forming apparatus 1 deposits material on the film forming surface 100a of the substrate 100 adsorbed on the electrostatic chuck 15 via the mask 101.

[0060] In this embodiment, the static eliminator of the film forming apparatus 1 is adjusted in position by the adjustment mechanism (7, 8, 20, 22) to eliminate static electricity on the film forming surface 100a of the substrate 100 before the substrate 100 and the mask 101 approach each other.

[0061] As a state before the substrate 100 and mask 101 approach each other, the static eliminator of the film deposition apparatus 1 performs static elimination on the film deposition surface 100a of the substrate 100 before the substrate 100 is attracted by the electrostatic chuck 15. Alternatively, as a state before the substrate 100 and mask 101 approach each other, the static eliminator of the film deposition apparatus 1 performs static elimination on the film deposition surface 100a of the substrate 100 after the substrate 100 is attracted by the electrostatic chuck 15.

[0062] In this embodiment, the path before the substrate 100 comes into contact with the electrostatic chuck 15 is called the substrate transport path before film formation (hereinafter also simply referred to as the transport path). For example, the path before the substrate 100 is attracted by the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 where the first film formation process is performed is the substrate transport path before film formation, and the static removal at the position on the substrate transport path is the static removal in the state before the substrate 100 and the mask 101 approach each other.

[0063] exist Figure 1 In this structure, for example, the path from the substrate storage rack provided in the buffer chamber 306 to the point before the substrate 100 is attracted by the electrostatic chuck 15 of the film forming apparatus 1 in the film forming chamber 303 is the substrate transport path before film forming. The static removal at the location on the substrate transport path is the static removal performed before the substrate 100 and the mask 101 approach each other. The substrate transport path before film forming is only the path before the substrate 100 is attracted by the electrostatic chuck 15, and is not limited to this path. Figure 1 The structure shown in the example can also be used as the starting point of the path, with the storage container for receiving the substrate 100 located further upstream of the buffer chamber 306. In this embodiment, the device structure on the substrate transport path before film formation and each film formation module 301 including the film formation apparatus 1 are sometimes collectively referred to as the film formation system or film formation apparatus.

[0064] <Example 1 of a static eliminator structure: An example of installing a static eliminator in the conveying chamber 302>

[0065] Figure 3 This is a diagram illustrating a structural example 1 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 1 of the static eliminator, the structure of a static eliminator (ion generator) 350 capable of operation in a vacuum environment will be described. Figure 3 In this example, as a substrate transport path before film formation (the state before the substrate 100 and mask 101 approach each other), an example is shown where an antistatic device (ion generator) 350 is installed in the transport chamber 302. Specifically, an example is shown where the antistatic device (ion generator) 350 is installed near the gate valve 361 between the film formation chamber 303 and the transport chamber 302. The antistatic treatment at the location on the substrate transport path is the antistatic treatment performed before the substrate 100 and mask 101 approach each other.

[0066] The static eliminator (ion generator) 350 is a device that outputs ultraviolet light that induces ionization. For example, it could also be a device employing a vacuum ultraviolet light-based ion generation method (photoionization). The static eliminator (ion generator) 350 can be connected to a vacuum chamber (e.g., in a vacuum chamber) via a vacuum flange 352. Figure 3 In example 1, the connection is made to the transport chamber 2, etc. Here, the vacuum flange 352 has a sealing function and is a vacuum component that can connect the vacuum chamber and the static eliminator (ion generator) 350.

[0067] The static eliminator (ion generator) 350 has a vacuum ultraviolet light generating unit 351 (light source unit) and an irradiation unit 353 that irradiates the vacuum ultraviolet light generated by the vacuum ultraviolet light generating unit 351, and irradiates the vacuum ultraviolet light 354 from the irradiation unit 353.

[0068] exist Figure 3 The illustrated structure shows an example where static eliminators (ion generators) 350 are provided on both the upper and lower sides of the transport chamber 302. However, in the upward deposition type film deposition apparatus 1, when eliminating static electricity on the film deposition surface 100a of the substrate 100, it is sufficient to provide a static eliminator (ion generator) 350 only on the lower side of the transport chamber 302. The transport robot 302a adjusts the distance between the irradiation unit 353 and the film deposition surface 100a by controlling its position in the Z direction (vertical direction), thereby adjusting the irradiation range of the vacuum ultraviolet light 354.

[0069] The transport robot 302a moves in the X direction (horizontal direction) to transport the substrate 100 to the film deposition chamber 303. Thereby, the film deposition surface 100a of the substrate 100 is irradiated by vacuum ultraviolet light 354 on the substrate transport path before film deposition (before the substrate 100 and mask 101 approach each other), which removes the potential (static electricity) carried by the substrate 100. This static electricity removal at this location also constitutes static electricity removal before the substrate 100 and mask 101 approach each other. To simultaneously remove static electricity over a wider irradiation range on the substrate transport path before film deposition (before the substrate 100 and mask 101 approach each other), multiple static electricity removal devices (ion generators) 350 can also be provided in the Y direction (perpendicular to the paper plane).

[0070] <Example 2 of the structure of an antistatic device: An example of installing an antistatic device in buffer chamber 306>

[0071] The location of the static eliminator (ion generator) 350 is not limited to the transport chamber 302, but can also be used to irradiate the substrate 100 stored in the storage container or the substrate storage rack in the buffer chamber 306 with vacuum ultraviolet light 354. In this embodiment, the path before the substrate 100 is attracted by the electrostatic chuck 15 is used as the substrate transport path before film formation. Therefore, the buffer chamber 306, the storage container for the substrate 100 located upstream of the buffer chamber 306, etc., are also included in the substrate transport path before film formation. The static eliminator at the location on the substrate transport path is the static eliminator performed before the substrate 100 and the mask 101 approach each other.

[0072] Figure 4 This is a diagram illustrating a structural example 2 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 2 of the static eliminator, in... Figure 4 In this example, as a substrate transport path before film formation (the state before the substrate 100 and mask 101 approach each other), an example is shown where an antistatic device (ion generator) 350 is installed in the buffer chamber 306. Since the substrate 100 is stored in the substrate storage rack of the buffer chamber 306 in a horizontal state with the surface to be processed (film formation surface) facing downwards (vertically downwards), the film formation surface 100a of the substrate 100 becomes... Figure 4 The vertical lower side.

[0073] exist Figure 4 The structure shown represents an example in which static eliminators (ion generators) 350 are provided on both the upper and lower sides of the transport chamber 302. However, in the upward deposition type film deposition apparatus 1, when static eliminating the film deposition surface 100a of the substrate 100 is performed, it is sufficient to provide a static eliminator (ion generator) 350 on at least the lower side of the buffer chamber 306.

[0074] In order to irradiate the substrate 100 with vacuum ultraviolet light 354 over a wide area while it is in a stored state, Figure 4 In structural example 2, multiple static eliminators (ion generators) 350 are provided in the X direction (horizontal direction), but providing multiple static eliminators 350 is not a necessary structure. For example, if a single static eliminator (ion generator) 350 can be used to eliminate static electricity in the area of ​​the film-forming surface 100a of the substrate 100 that needs to be eliminated, it is sufficient to provide at least one static eliminator (ion generator) 350 on the lower side of the buffer chamber 306.

[0075] <Example 3 of a static eliminator structure: An example of installing a static eliminator in a cyclone chamber 307>

[0076] In this embodiment, the path from the substrate 100 to the electrostatic chuck 15 is used as the substrate transport path before film formation. Therefore, for example, Figure 1 The swirl chamber 307, the transfer chamber 308, etc., are also included in the substrate transport path before film formation. That is, the static elimination at the location on the substrate transport path is the static elimination performed before the substrate 100 and the mask 101 approach each other.

[0077] Figure 5 This is a diagram illustrating a structural example 3 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 3 of the static eliminator, in... Figure 5 In this example, as a substrate transport path before film formation (the state before substrate 100 and mask 101 approach each other), an example is shown where an antistatic device (ion generator) 350 is installed in a cyclone chamber 307. A transport robot 307a moves in the X direction (horizontal direction) within the cyclone chamber 307, transporting substrate 100 to a transfer chamber 308. Thereby, the film-forming surface 100a of substrate 100 is irradiated by vacuum ultraviolet light 354 on the substrate transport path before film formation (the state before substrate 100 and mask 101 approach each other), thus removing the potential (static charge) carried by substrate 100. To simultaneously remove static charge over a wider irradiation range on the substrate transport path before film formation (the state before substrate 100 and mask 101 approach each other), multiple antistatic devices (ion generators) 350 can also be installed in the Y direction (the direction perpendicular to the paper plane). The location of the antistatic device (ion generator) 350 is not limited to... Figure 5 The swirl chamber 307 shown can also be the junction chamber 308.

[0078] exist Figure 5 In the structure shown, with Figure 3 Similarly, this example illustrates the provision of static eliminators (ion generators) 350 on both the upper and lower sides of the cyclone chamber 307. However, in the upward deposition type film deposition apparatus 1, when eliminating static electricity on the film deposition surface 100a of the substrate 100, it is sufficient to provide a static eliminator (ion generator) 350 only on the lower side of the cyclone chamber 307. The transport robot 307a adjusts the distance between the irradiation unit 353 and the film deposition surface 100a by controlling its position in the Z direction (vertical direction), thereby adjusting the irradiation range of the vacuum ultraviolet light 354.

[0079] <Example 4 of the structure of an antistatic device: An example of installing an antistatic device on the side wall of film forming apparatus 1>

[0080] Figure 6 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus 1 of the embodiment, as shown in Example 4. Figure 6 The example shown is an example in which an antistatic device (ion generator) 350 is provided on the side wall of the film forming apparatus 1.

[0081] The substrate 100 is supported by the substrate support portion 62 (substrate support claw) at the periphery of the substrate 100. In this state, the substrate 100 is not attracted by the electrostatic chuck 15. In addition, the substrate 100 is not in contact with the mask 101. In this state, an electrostatic eliminator (ion generator) 350 is provided on the side wall of the film forming apparatus 1 so as to irradiate the substrate 100 supported by the substrate support portion 62 with vacuum ultraviolet light 354 from the horizontal direction (X direction).

[0082] As shown in structural example 4, the static elimination in the state before the substrate 100 is placed on the substrate support 62 and adsorbed by the electrostatic chuck 15 is the static elimination in the state before the substrate 100 and the mask 101 are close together.

[0083] <Example 5 of the structure of an antistatic device: An example of installing an antistatic device on the side wall of film forming apparatus 1>

[0084] Figure 7 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus 1 of the embodiment, as shown in Example 5. Figure 7 The example shown is an example in which an antistatic device (ion generator) 350 is provided on the side wall of the film forming apparatus 1.

[0085] In structural example 5, an antistatic device (ion generator) 350 is disposed on the side wall of the film forming apparatus 1 so that after the substrate 100 is attracted by the electrostatic chuck 15, the substrate 100 is irradiated with vacuum ultraviolet light 354. (This is similar to structural example 4.) Figure 6 The difference is that the object irradiated by vacuum ultraviolet light 354 is not the substrate 100 (film-forming surface 100a) before it is adsorbed by the electrostatic chuck 15, but the substrate 100 (film-forming surface 100a) after it is adsorbed by the electrostatic chuck 15. In structural example 5, the following example will be described: as a state before the substrate 100 and the mask 101 approach each other, the static eliminator of the film-forming apparatus 1 performs static elimination on the film-forming surface 100a of the substrate 100 after the substrate 100 is adsorbed by the electrostatic chuck 15.

[0086] The distance adjustment unit 22 adjusts the vertical (Z-direction) position of the substrate 100 so that it enters the irradiation range of the static eliminator (ion generator) 350 by raising and lowering the first lifting plate 220, thereby raising and lowering the electrostatic chuck 15 and the substrate 100 adsorbed on the electrostatic chuck 15. The position only needs to be adjusted to allow static elimination of the film-forming surface 100a of the substrate 100. After alignment, the static eliminator (ion generator) 350 irradiates the electrostatic chuck 15 with vacuum ultraviolet light 354.

[0087] exist Figure 6 The structure shown in Example 4, and Figure 7In Structural Example 5, each example shows an example where an antistatic device (ion generator) 350 is installed on the side wall of the film-forming apparatus 1. Since the irradiation range of one antistatic device (ion generator) 350 installed on each side can cover both Structural Example 4 and Structural Example 5, it is sufficient to install one antistatic device (ion generator) 350 on each side wall of the film-forming apparatus 1.

[0088] exist Figure 7 In the structural example 5 shown, it indicates the use of the same structure as in structural example 4 ( Figure 6 This example illustrates a shared static eliminator (ion generator) 350, but is not limited to this example. Multiple static eliminators (ion generators) 350 may be provided on the left and right sides of the sidewall. That is, a first static eliminator (ion generator) 350 may be provided on the left and right sides respectively, which irradiates the substrate 100 (film-forming surface 100a) with vacuum ultraviolet light 354 before it is attracted by the electrostatic chuck 15, and a second static eliminator (ion generator) 350 may be provided on the left and right sides respectively, which irradiates the substrate 100 (film-forming surface 100a) with vacuum ultraviolet light 354 after it is attracted by the electrostatic chuck 15.

[0089] As shown in structural example 5, the static electricity removal state of the substrate 100 after it is attracted by the electrostatic chuck 15 is also the same as that in structural example 4 ( Figure 6 Similarly, it serves to remove static electricity before the substrate 100 and mask 101 are brought close together.

[0090] As shown in Structural Examples 1 to 5, by irradiating the substrate 100 (film-forming surface 100a) with vacuum ultraviolet light 354 using an antistatic device (ion generator) 350, the potential carried on the film-forming surface 100a of the substrate 100 can be removed.

[0091] <Example 6 of the structure of an antistatic device: Example of using an antistatic diffusing material: substrate support>

[0092] In Structural Examples 1 through 5, the structure using the static eliminator (ion generator) 350 was described, but the structure of the static eliminator is not limited to these examples. For example, a material with electrostatic diffusivity can also be used. A material with electrostatic diffusivity is a material that has the property of diffusing charged charges (electrostatic diffusivity). Here, "electrostatic diffusivity" means that the surface resistivity (Rs) measured based on the provisions of IEC 61340-5-1 and 5-2 has a value of 1 × 10⁻⁶. 4 Ω or higher and less than 1×10 11 A substance with a surface resistivity of Ω. The range of this surface resistivity (Rs) is also called the electrostatic diffusion region. Hereinafter, substances with electrostatic diffusion properties will also be referred to as electrostatic diffusing substances.

[0093] As a material with electrostatic diffusion properties, for example, a resin (e.g., a thermosetting resin) or ceramic located in the electrostatic diffusion region can be used. The electrostatic diffusion material can be shaped into parts of various shapes so as to facilitate contact with the part to be eluted (the film-forming surface 100a of the substrate 100).

[0094] In structural example 6, the following example will be described: Before the substrate 100 and mask 101 approach each other, the static eliminator of the film deposition apparatus 1 removes static electricity from the film deposition surface 100a of the substrate 100 after the substrate 100 is attracted by the electrostatic chuck 15. In structural example 6 of the static eliminator, the following example will be described: At the periphery of the substrate 100, a substrate support portion 62, made of an electrostatically diffusing material, contacts the periphery of the film deposition surface 100a of the substrate 100. Figure 8 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus 1 of the embodiment, as shown in Example 6. Figure 8 In this context, the substrate support 62, the base 61, and the actuator 65, all made of electrostatically diffusing material, are referred to as an electrostatic discharge device.

[0095] Figure 8 This refers to the film-forming apparatus 1 that utilizes structure example 6. The basic apparatus structure has the same characteristics as in... Figure 2 The film-forming apparatus 1 described herein has the same structure, but differs in that the substrate support portion 62 is formed of an electrostatically diffusing material, which is also a structure for eliminating static electricity. The base portion 61, the substrate support portion 62, and the actuator 65 are configured as at least a left-right pair. It should be noted that the base portion 61, the substrate support portion 62, and the actuator 65 may also be further provided in the vertical direction of the paper surface, surrounding the periphery of the substrate 100.

[0096] As a component formed from a material with electrostatic diffusion properties, the substrate support 62 contacts the film-forming surface 100a of the substrate 100 when supporting the periphery of the substrate 100. The substrate 100, fed into the vacuum chamber 3 of the film-forming apparatus 1, is placed on the substrate support 62, thereby destaticating the periphery of the film-forming surface 100a of the substrate 100 through contact with the substrate support 62 formed from the electrostatic diffusion material. As shown in structural example 6, the destatication of the substrate 100 before it is placed on the substrate support 62 and adsorbed by the electrostatic chuck 15 also constitutes the destatication of the substrate 100 before it approaches the mask 101.

[0097] <Example 7 of the structure of an antistatic device: An example using a static-diffusing material: protruding shape>

[0098] In structural example 7, the following example will be described: As a state before the substrate 100 and the mask 101 approach each other, the static eliminator of the film forming apparatus 1 removes static electricity from the film forming surface 100a of the substrate 100 after the substrate 100 is attracted by the static chuck 15. Figure 9 This is a diagram illustrating a structural example 7 of the antistatic device in the film-forming apparatus 1 of the embodiment. As a structural example 7 of the antistatic device, an example is shown of a protruding (pin-shaped) component formed from an electrostatically diffusing material 504.

[0099] In structural example 7, a protruding (pin-shaped) component formed of electrostatically diffusing material 504 contacts the film-forming surface 100a of the substrate 100 adsorbed on the electrostatic chuck 15. An antistatic hand 503 holding the protruding (pin-shaped) component formed of electrostatically diffusing material 504 is placed on a transport robot 302a and transported from the transport chamber 302 to the film-forming chamber 303 (vacuum chamber) by the transport robot 302a. After being transported into the film-forming chamber 303 (vacuum chamber), the antistatic hand 503 is then raised vertically by the transport robot 302a, and the protruding (pin-shaped) component contacts the film-forming surface 100a of the substrate 100.

[0100] By contacting a protruding (pin-shaped) component formed of electrostatically diffusing material 504 with the film-forming surface 100a of the substrate 100, the potential carried on the film-forming surface 100a of the substrate 100 can be removed. As shown in Structural Example 7, the static elimination of the substrate 100 after it has been attracted by the electrostatic chuck 15 also constitutes static elimination before the substrate 100 and the mask 101 approach each other. In Structural Example 7, the static elimination hand 503 is stored, for example, in the mask storage chamber 305. When the transport robot 302a performs static elimination processing, it retrieves the static elimination hand 503 from the mask storage chamber 305 and performs static elimination processing. It should be noted that the location for storing the static elimination hand 503 is not limited to the mask storage chamber 305, and a separate space for storing the static elimination hand 503 may also be provided.

[0101] <Example 8 of the structure of an antistatic device: An example using a static-diffusing material: sheet-like>

[0102] In structural example 8, the following example will be described: As a state before the substrate 100 and the mask 101 approach each other, the static eliminator of the film forming apparatus 1 removes static electricity from the film forming surface 100a of the substrate 100 after the substrate 100 is attracted by the static chuck 15. Figure 10 This is a diagram illustrating a structural example 8 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 8 of the static eliminator, it shows an example of a sheet-like (plate-like) component formed from an electrostatically diffusing material 504 with two-dimensional expansion.

[0103] In structural example 8, a sheet-like component formed from electrostatically diffusing material 504 contacts the film-forming surface 100a of the substrate 100 adsorbed on the electrostatic chuck 15. An antistatic hand 503, holding the sheet-like component via a sheet-holding member 505, is placed on a transport robot 302a and transported from the transport chamber 302 to the film-forming chamber 303 (vacuum chamber) via the transport robot 302a. After being transported into the film-forming chamber 303 (vacuum chamber), the antistatic hand 503 rises vertically upwards via the transport robot 302a, and the sheet-like component formed from the electrostatically diffusing material 504 contacts the film-forming surface 100a of the substrate 100.

[0104] By contacting a sheet-like component formed from electrostatically diffusing material 504 with the film-forming surface 100a of substrate 100, the potential carried on the film-forming surface 100a of substrate 100 can be removed. As shown in structural example 8, the static elimination of substrate 100 after it is adsorbed by electrostatic chuck 15 also constitutes static elimination before substrate 100 and mask 101 approach each other. In structural example 8, the static elimination hand 503 is stored, for example, in mask storage chamber 305. When the transport robot 302a performs static elimination processing, it retrieves the static elimination hand 503 from mask storage chamber 305 and performs static elimination processing. It should be noted that the location for storing the static elimination hand 503 is not limited to mask storage chamber 305, and a separate space for storing the static elimination hand 503 may also be provided.

[0105] <Overall processing flow performed by film-forming device 1>

[0106] Figure 11 ST1 and ST2 are flowcharts representing the overall processing flow performed by the film deposition apparatus 1. This flowchart shows a general outline of the processes performed by the film deposition apparatus 1 on a substrate 100.

[0107] In ST1 and ST2, S201 is a pretreatment step. In this step, as a pretreatment for film formation, static electricity is removed using a static eliminator.

[0108] The pretreatment step (S201) of ST1 is a pretreatment (static removal treatment) performed before the adsorption step (S202). In this case, static removal treatment can be performed by any one of Structural Examples 1 to 4 and Structural Example 6.

[0109] Not limited to the pretreatment step (S201) of ST1, if static elimination treatment is performed by any one of Structural Examples 5, 7, and 8, then according to the flowchart of ST2, static elimination treatment can be performed by any one of Structural Examples 5, 7, and 8 in the pretreatment step (S201) after the adsorption step (S202). In any of the flowcharts of ST1 and ST2, according to the film forming apparatus 1 of this embodiment, by adjusting the position of the adjusting mechanisms (7, 8, 20, 22), static elimination can be performed on the film forming surface 100a of the substrate 100 before the substrate 100 and the mask 101 approach.

[0110] S202 is the adsorption process. For example, the control device 14 raises the substrate support unit 6 of the support substrate 100 to a predetermined position. The control device 14 generates an adsorption force by applying a voltage with a set change to the electrode portion of the electrostatic chuck 15, causing the electrostatic chuck 15 to adsorb the substrate 100.

[0111] S203 is the alignment process. The control device 14 lowers the electrostatic chuck 15, which holds the substrate 100, to bring the substrate 100 close to the mask 101 via the distance adjustment unit 22. Then, the horizontal position of the substrate 100 and the mask 101 is adjusted by the position adjustment unit 20.

[0112] S204 is the film deposition process. As preparation, the control device 14 brings the aligned substrate 100 into contact with the mask 101. Next, the control device 14 lowers the plate unit 9 and uses the magnetic force of the magnet plate 11 to bring the substrate 100 and mask 101 into closer contact. In this state, the control device 14 deposits the vapor deposition material onto the substrate 100 via the film deposition unit 4.

[0113] S205 is the peeling process. The control device 14 peels the substrate 100 from the electrostatic chuck 15 by stopping the voltage applied to the electrode portion of the electrostatic chuck 15. It should be noted that the control device 14 may also reduce the voltage applied to the electrode portion to a level where the electrostatic chuck 15 can no longer maintain the adhesion of the substrate 100 without stopping the voltage applied to the electrode portion.

[0114] S206 is the delivery process. In this process, the substrate 100 is delivered from the film forming apparatus to the outside of the apparatus by the conveying robot 302a.

[0115] According to this embodiment, static electricity can be removed from the film-forming surface of the substrate before the mask and substrate are brought close together by adjusting their relative positions. It should be noted that in the film-forming apparatus 1 of this embodiment, a structure using an electrostatic chuck 15 has been described, but this is not the only example; the disclosed technology can solve the same problem and achieve the same effect in film-forming apparatuses that do not use an electrostatic chuck 15.

[0116] <Other Implementation Methods>

[0117] The present invention can also be implemented by providing a program that implements one or more functions of the above embodiments to a system or device via a network or storage medium, wherein one or more processors in the computer of the system or device read and execute the processing of the program. Alternatively, it can be implemented by a circuit (e.g., an ASIC) that implements one or more functions.

[0118] This invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are appended to disclose the scope of the invention.

[0119] This application claims priority based on Japanese Patent Application No. 2023-156498, filed on September 21, 2023, the entire contents of which are incorporated herein by reference.

[0120] Explanation of reference numerals in the attached figures

[0121] 1: Film forming apparatus, 14: Control device, 15: Electrostatic chuck, 8: Alignment unit, 10: Evaporation unit (film forming source), 62: Substrate support (substrate support claw), 100: Substrate, 100a: Film forming surface (substrate), 101: Mask, 150: Adsorption surface (electrostatic chuck), 302a: Transport robot, 307a: Transport robot, 350: Static eliminator (ion generator), 501: Static eliminator (static eliminator robot), 504: Electrostatic diffusing material.

Claims

1. A film-forming apparatus comprising an adjustment member that adjusts the relative position of the substrate and the mask based on measurement results of alignment marks formed on the substrate and the mask, respectively, wherein the film-forming apparatus forms a film of a vapor-deposited material on the film-forming surface of the substrate adsorbed on an electrostatic chuck via the mask, characterized in that, The film-forming apparatus includes an antistatic component. By adjusting the position of the adjusting component, the antistatic component removes static electricity from the film-forming surface of the substrate before the substrate and the mask approach each other.

2. The film-forming apparatus as described in claim 1, characterized in that, The static eliminator removes static electricity from the film-forming surface of the substrate before the substrate and the mask approach each other and before the substrate is attracted by the electrostatic chuck.

3. The film-forming apparatus as described in claim 1, characterized in that, The static eliminator removes static electricity from the film-forming surface of the substrate before the substrate and the mask approach each other, and after the substrate has been attracted by the electrostatic chuck.

4. The film-forming apparatus according to any one of claims 1 to 3, characterized in that, The static eliminator includes an ion generator, which irradiates the film-forming surface of the substrate with ultraviolet light to induce ionization.

5. The film-forming apparatus according to any one of claims 1 to 3, characterized in that, The static eliminator component is made of a material with a size of 1×10 4 Ω or higher and less than 1×10 11 A component formed from a material with a surface resistance of Ω and electrostatic diffusion properties comes into contact with the film-forming surface to remove static electricity from the film-forming surface.

6. The film-forming apparatus as described in claim 5, characterized in that, The antistatic component makes a component with multiple protruding shapes or a sheet-like component, formed from the electrostatically diffusive material, contact the film-forming surface to eliminate static electricity from the film-forming surface. The sheet-like component has a two-dimensional extension.

7. The film-forming apparatus as described in claim 5, characterized in that, The antistatic component includes a substrate support member that contacts the film-forming surface of the substrate when supporting the periphery of the substrate, and is a component formed from the material having electrostatic diffusion properties.

8. The film-forming apparatus as described in claim 1, characterized in that, The adjustment component adjusts the relative positions of the substrate and the mask adsorbed by the electrostatic chuck.

9. The film-forming apparatus as claimed in claim 1, characterized in that, The mask has a mask foil with a thickness of 10 μm or more and 100 μm or less, disposed on the mask frame.

10. The film-forming apparatus as claimed in claim 1, characterized in that, The film-forming apparatus is an upward deposition type film-forming apparatus. The vertically upper side of the substrate is the adsorption surface that is attracted by the electrostatic chuck, and the vertically lower side of the substrate is the film-forming surface. A thin film of vapor-deposited material with a predetermined pattern is formed on the film-forming surface of the substrate via the mask.

11. A film-forming apparatus comprising an adjustment member that adjusts the relative position of the substrate and the mask based on measurements of alignment marks formed on the substrate and the mask, respectively, wherein the film-forming apparatus forms a film of a vapor-deposited material on the film-forming surface of the substrate via the mask, characterized in that, The film-forming apparatus includes an antistatic component. By adjusting the position of the adjusting component, the antistatic component removes static electricity from the film-forming surface of the substrate before the substrate and the mask approach each other.

12. A film-forming method, comprising a film-forming apparatus having an adjustment member that adjusts the relative position of the substrate and the mask based on measurement results of alignment marks formed on the substrate and the mask respectively, wherein the film-forming apparatus forms a film of a vapor-deposited material on the film-forming surface of the substrate adsorbed on an electrostatic chuck via the mask, characterized in that, The film formation method includes an antistatic step, in which the film formation surface of the substrate is destaticated by adjusting the position of the adjusting member before the substrate and the mask approach each other.

13. A film-forming method, comprising a film-forming apparatus having an adjustment member that adjusts the relative position of the substrate and the mask based on measurement results of alignment marks formed on the substrate and the mask respectively, wherein the film-forming apparatus forms a film of a vapor-deposited material on the film-forming surface of the substrate via the mask, characterized in that, The film formation method includes an antistatic step, in which the film formation surface of the substrate is destaticated by adjusting the position of the adjusting member before the substrate and the mask approach each other.

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