Process stack for CVD plasma treatment

Abstract

A gas distribution assembly, a processing chamber, and a method for processing a substrate are provided. A substrate processing chamber includes a chamber body having a first end and a second end; a cover coupled to the first end of the chamber body; a spacer disposed on an upper surface of the cover; a panel disposed on an upper surface of the separator; a substrate support disposed on a shaft extending through the second end of the chamber body; a pumping ring positioned within the chamber body; and a discharge outlet in fluid communication with the system foreline and the plurality of apertures. The processing chamber defines a processing region between the substrate support and the panel. The pumping ring includes a flange extending in a plane substantially parallel to a top surface of the substrate support, the flange defining a plurality of apertures.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Patent Application No. 18 / 227,767, filed July 28, 2023, entitled “PROCESS STACK FOR CVD PLASMATREATMENT,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] This technology relates to components and apparatus for semiconductor manufacturing. More specifically, this technology relates to processing chamber components and other semiconductor processing equipment. Background Technology

[0004] Integrated circuits are made possible by processes that create complex patterned material layers on substrate surfaces. Producing patterned materials on a substrate requires controlled methods for material deposition, expansion, and removal. However, producing high-quality material layers can be challenging for novel processing designs. For example, in some processing methods, large pressure transitions may occur within the processing region when the same processing chamber is circulated between different processing methods. These pressure transitions can include periods of pressure transition as gas flows out of the processing region. During these pressure transitions, undesirable byproducts within the chamber body may inadvertently interact with the substrate being formed.

[0005] Therefore, there is a need for improved systems and methods for producing high-quality components and structures. This technology addresses these and other needs. Summary of the Invention

[0006] This technology generally relates to gas distribution assemblies, processing chambers, and methods for processing substrates. A substrate processing chamber includes a chamber body having a first end and a second end, a cover coupled to the first end of the chamber body, a spacer disposed on an upper surface of the cover, a panel disposed on an upper surface of the spacer, a substrate support disposed on a shaft extending through the second end of the chamber body, a pumping ring positioned within the chamber body, and a discharge outlet in fluid communication with a system pre-line and a plurality of pores. The processing chamber defines a processing area between the substrate support and the panel. The pumping ring includes a flange extending in a plane generally parallel to the top surface of the substrate support, the flange defining a plurality of pores.

[0007] In one embodiment, the flange includes a first segment and a second segment, wherein the first segment defines a first portion of the pores in a plurality of pores, and the second segment defines a second portion of the pores in a plurality of pores; and the first segment defines a first segment void volume based on the pores of the first portion, and the second segment defines a second segment void volume based on the pores of the second portion, wherein the first segment void volume is smaller than the second segment void volume. In more embodiments, the first segment is closer to the discharge outlet than the second segment. Additionally, in one embodiment, the pores of the first portion comprise a fewer number of pores than the pores of the second portion. In another embodiment, the pores of the first portion comprise an equal number of pores as the pores of the second portion. Additionally, in some embodiments, each pore of the pores of the first portion comprises a smaller void volume than each pore of the second group of pores. In one embodiment, the processing system includes a pumping support disposed between the pumping ring and the chamber body, wherein the pumping support defines a pumping channel in fluid communication with the plurality of pores and a pumping outlet in fluid communication with the pumping channel and the system's pre-line. In some embodiments, the bottom surface of the isolator is substantially coplanar with the bottom surface of the panel. Additionally, in another embodiment, the isolator includes an isolator body and an isolator extension extending from the isolator body at an angle, wherein the isolator extension forms the bottom surface of the isolator.

[0008] This technology also generally relates to gas distribution assemblies. A gas distribution assembly includes a pumping ring having a ring body, a transition portion, and a flange extending laterally from the ring body. The flange defines a plurality of pores extending from a top surface of the flange to a bottom surface of the flange. The flange includes a first segment and a second segment. The first segment of the flange defines a first portion of the pores, and the second segment of the flange defines a second portion of the pores. The first segment defines a first segment void volume based on the first portion of the pores, and the second segment defines a second segment void volume based on the second portion of the pores, wherein the first segment void volume is smaller than the second segment void volume. The gas distribution assembly also includes a spacer having a base portion, a body portion, and an extension portion. The extension portion of the spacer is disposed above and generally parallel to the transition portion of the pumping ring.

[0009] In one embodiment, at least one of the plurality of pores comprises a truncated conical shape. In a further embodiment, the flange comprises a top surface and a bottom surface, the top surface defining a first width of the at least one pore, and the bottom surface defining a second width of the at least one pore, the first width being smaller than the second width. Additionally, in one embodiment, the pores of the first portion comprise a fewer number of pores than the pores of the second portion. In yet another embodiment, the pores of the first portion comprise an equal number of pores as the pores of the second portion. Additionally or alternatively, in one embodiment, each pore of the pores of the first portion comprises a smaller void volume than each pore of the pores of the second portion. In one embodiment, the flange further comprises a third segment positioned between the first segment and the second segment, wherein the third segment defines a third portion of the pores, and the third segment defines a void volume based on the pores of the third portion, wherein the void volume of the third segment is smaller than the void volume of the second segment and larger than the void volume of the first segment. In further embodiments, the pores of the third portion include a fewer number of pores than the pores of the second portion and a greater number of pores than the pores of the first portion. Additionally, in embodiments, the pores of the third portion include an equal number of pores as at least one of the pores of the first or second portion. In embodiments, each pore of the third portion includes a smaller void volume than each of the at least one of the pores of the first or second portion.

[0010] This technology also generally relates to a method of semiconductor processing. The method includes introducing a carbon-containing precursor into a processing chamber and discharging gas from the chamber body of the processing chamber to an outlet via a pumping ring. In the method, the processing chamber includes a chamber body having a first end and a second end, a cover coupled to the first end of the chamber body, a spacer disposed on an upper surface of the cover, a panel disposed on an upper surface of the spacer, a substrate support disposed on a shaft extending through the second end of the chamber body, a pumping ring positioned within the chamber body, and an outlet in fluid communication with system front-end piping and a plurality of pores. The processing chamber includes a processing area defined between the substrate support and the panel. The method includes a pumping ring having a flange extending in a plane generally parallel to the top surface of the substrate support, the flange defining a plurality of pores.

[0011] This technology offers numerous advantages over conventional systems and techniques. For example, when two or more processes are performed in a processing chamber, these processes and apparatus can reduce the number of defects formed on the substrate. That is, the processes and apparatus can significantly improve the types of processes and pressures that can be performed in a single chamber, thereby improving substrate throughput and electrical properties. These and other embodiments, along with their many advantages and features, are described in more detail below in conjunction with the accompanying drawings. Attached Figure Description

[0012] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the accompanying drawings.

[0013] Figure 1 A top view schematic diagram of a processing chamber according to an embodiment of the present technology is shown.

[0014] Figure 2 A cross-sectional side view of a processing chamber according to an embodiment of the present technology is shown.

[0015] Figure 3 A partial cross-sectional side view of a processing chamber according to an embodiment of the present technology is shown.

[0016] Figure 4 A partial cross-sectional view of a process stack according to an embodiment of the present technology is shown.

[0017] Figure 5 An isometric view of a pumping ring according to an embodiment of the present technology is shown.

[0018] Figure 6 The operation of exemplary methods of semiconductor processing according to some embodiments of the present technology is shown.

[0019] In the accompanying drawings, similar parts and / or features may have the same element symbols. Additionally, various parts of the same type can be distinguished by following the element symbol with letters that differentiate them. If only the main element symbol is used in the specification, the description applies to any of the similar parts having the same main element symbol, regardless of the letters. Detailed Implementation

[0020] As device feature sizes decrease, tolerances across substrate surfaces can decrease, and differences in material properties across films can affect device realization and uniformity. Many processing chambers include asymmetric exhaust systems, where gas is not uniformly exhausted from all sides of the chamber, resulting in skewing in the gas outflow. For example, a single-emission plasma-enhanced chemical vapor deposition (PECVD) chamber may include a fore-line conduit positioned along one side of the chamber (for exhausting gas from the chamber body), causing skewing of the gas flow toward that side. This skewing can create non-uniformity in the gas flow across the chamber, which in turn can create non-uniformity in the gas flow across the substrate. This non-uniformity in the gas flow can result in differences in film uniformity on the substrate for the material produced or removed. That is, the resulting substrate may be characterized by varying thicknesses or different film properties across the substrate surface. This variation can be undesirable and may ultimately lead to semiconductor failure.

[0021] Furthermore, certain types of substrate processing methods benefit from cycling between high-pressure and low-pressure processes within the processing area. For example, it is often desirable to perform vapor deposition and plasma deposition processes within the same processing chamber. Chemical vapor deposition (CVD) methods typically utilize atmospheric pressure or slightly below atmospheric pressure (e.g., 500 Torr). However, plasma processes are performed under higher vacuum and lower pressure environments (e.g., 5–10 Torr). Many existing systems are not suited to such large pressure changes within the same processing chamber. Therefore, when using conventional systems and methods, undesirable byproducts may enter the processing area via pores in the pumping ring during such pressure transitions, leading to defects on the substrate surface.

[0022] In conventional systems, pumping rings in the process stack define pores extending laterally out of the processing area for removing process gases. In this configuration, the process gases flow through these pores in a horizontal flow path with minimal resistance to surrounding flow. This horizontal flow path places the substrate directly beneath the flow path, allowing any unwanted byproducts trapped in the flow path to be deposited directly onto the substrate due to the pressure differential exhibited during circulation between process steps. Therefore, byproducts may fall onto the substrate during pressure transitions as the gas is discharged from the processing area.

[0023] This technology overcomes these and other problems by providing a pumping ring that alters the flow path of process gases to significantly reduce or even eliminate substrate defects caused by pressure transitions within the processing chamber. For example, the flow path of process gases can be altered by a pumping ring in a refreshed process stack with vertically extending orifices, so that the substrate is no longer in the direct flow path of the gas during pressure transition periods. Specifically, the pumping ring is used in conjunction with orifices that define the gas flow path, so that the gas flows vertically away from the substrate rather than horizontally. Therefore, the pumping ring allows pressure transitions within the processing area while minimizing the risk of the substrate being affected by undesirable byproducts. Furthermore, the pumped process stack according to this technology provides excellent process gas removal rates, improved flow uniformity throughout the chamber, and / or may also prevent parasitic luminescence. Thus, the process stack according to this technology surprisingly allows for excellent evacuation, increased throughput, and allows for multiple process conditions within a single processing chamber.

[0024] The remainder of this disclosure will conventionally identify specific process chambers and deposition processes used in conjunction with the improved processing chamber. However, it will be readily understood that the system and method are equally applicable to other substrates and deposition methods that will benefit from improved pressure flexibility and reduced defects during process cycles. Therefore, this technology should not be considered limited to use with these specific components or systems. This disclosure will discuss one possible semiconductor processing chamber that may include one or more components according to embodiments of the present technology, followed by descriptions of additional variations and adjustments to this apparatus according to embodiments of the present technology.

[0025] Figure 1 This diagram illustrates a top plan view of one embodiment of a processing system 100 comprising deposition, etching, baking, and curing chambers according to an embodiment. In this diagram, a pair of front-opening unified pods (FOUPs) 101 supply substrates of various sizes, which are received by robotic arms 102 and placed in low-pressure holding regions 103 before being placed into one of the substrate processing chambers 104a-f, which are positioned in series portions 105a-c. A second robotic arm 106 is used to transport substrate wafers from the holding region 103 to the substrate processing chambers 104a-f and back. Each substrate processing chamber 104a-f may be configured to perform multiple substrate processing operations, including cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced chemical vapor deposition (PECVD), etching, pre-cleaning, degassing, orientation, and other substrate processing. The substrate processing chambers 104a-f may include one or more system components for deposition, annealing, curing, and / or etching. Any one or more processes described herein may be performed in chamber(s) separate from the manufacturing systems shown in the various embodiments. It should be understood that system 100 takes into account the additional configuration of chambers 104a-f.

[0026] Figure 2A cross-sectional view of an exemplary processing chamber 200 according to some embodiments of the present technology is shown. This figure may illustrate an overview of an embodiment of the present technology incorporating one or more aspects of the present technology and / or a system that may be specifically configured to perform one or more operations. Additional details of the chamber 200 or the methods performed therein may be further described below. The chamber 200 may be used to form film layers, etch material layers, form other material layers or combinations thereof, but it should be understood that deposition and etching methods may be similarly performed in any chamber in which deposition and etching processes may occur. The processing chamber 200 may include a chamber body 202, a substrate support 204 disposed within the chamber body 202, and a cover assembly 206 coupled to the chamber body 202 and enclosing the substrate support 204 within a processing volume 220. A substrate 203 may be provided to the processing volume 220 via an opening 226, which may conventionally be sealed using a slit valve or door for processing. During processing, the substrate 203 may be located on the surface 205 of the substrate support. In some embodiments, as indicated by arrow 245, the substrate support 204 may be rotatable along axis 247, where axis 244 of the substrate support 204 may be located, or it may be stationary. Alternatively, the substrate support 204 may be lifted for rotation as needed during the deposition process.

[0027] Gas distributor 212 may define orifices 218 for distributing process precursors into processing volume 220. Gas distributor 212 may be coupled to a first power source 242, such as an RF generator, RF power supply, DC power supply, pulsed DC power supply, pulsed RF power supply, or any other power source that may be coupled to the processing chamber. In some embodiments, the first power source 242 may be an RF power supply.

[0028] The gas distributor 212 can be a conductive gas distributor or a non-conductive gas distributor. The gas distributor 212 can also be formed from conductive and non-conductive components. For example, the body of the gas distributor 212 can be conductive, while the panel of the gas distributor 212 can be non-conductive. The gas distributor 212 can be made of, for example,... Figure 2 The gas distributor 212 may be powered by the first power source 242 shown, or in some embodiments, the gas distributor 212 may be coupled to ground.

[0029] The gas distributor 212 can be a conductive gas distributor or a non-conductive gas distributor. The gas distributor 212 can also be formed from conductive and non-conductive components. For example, the body of the gas distributor 212 can be conductive, while the panel of the gas distributor 212 can be non-conductive. The gas distributor 212 can be made of, for example,... Figure 2 The gas distributor 212 may be powered by the first power source 242 shown, or in some embodiments, the gas distributor 212 may be coupled to ground.

[0030] The first electrode 222 may be coupled to the substrate support 204. The first electrode 222 may be embedded within the substrate support 204 or coupled to the surface of the substrate support 204. The first electrode 222 may be a plate, a perforated plate, a mesh, a wire mesh, or any other distributed arrangement of conductive elements. The first electrode 222 may be a tuning electrode and may be coupled to a tuning circuit 236 via a conduit 246, such as a cable having a selected resistance (e.g., 50 ohms), for example disposed in the shaft 244 of the substrate support 204. The tuning circuit 236 may have an electronic sensor 238 and an electronic controller 240, the electronic controller being a variable capacitor. The electronic sensor 238 may be a voltage or current sensor and may be coupled to a second electronic controller 240 to provide further control over the plasma conditions in the processing volume 220.

[0031] A second electrode 224, which may be a bias electrode and / or an electrostatic clamping electrode, may be coupled to the substrate support 204. The second electrode may be coupled to a second power source 250 via a filter 248, which may be an impedance matching circuit. The second power source 250 may be a DC power supply, a pulsed DC power supply, an RF bias power supply, a pulsed RF power supply, or a bias power supply, or a combination of these or other power supplies. In some embodiments, the second power source 250 may be an RF bias power supply. The substrate support 204 may also include one or more heating elements configured to heat the substrate to a processing temperature, which may be between about 25°C and about 800°C or higher.

[0032] Figure 2 The cover assembly 206 and substrate support 204 can be used with any processing chamber for plasma or thermal processing. In operation, the processing chamber 200 can provide real-time control of plasma conditions within the processing volume 220, such as via a system controller 201 that may be included within the processor 207. The substrate 203 can be disposed on the substrate support 204, and process gas can be flowed through the cover assembly 206 via inlet 214 according to any desired flow pattern. The gas can exit the processing chamber 200 via outlet 252. Electricity can be coupled to the gas distributor 212 to generate plasma in the processing volume 220. In some embodiments, a second electrode 224 can be used to subject the substrate to an electrical bias.

[0033] When the plasma in the processing volume 220 is excited, a potential difference can be established between the plasma and the first electrode 222. The electronic controller 240 can then be used to adjust the flow properties of the ground path represented by the tuning circuit 236. A setpoint can be delivered to the first circuit 236 to provide independent control over the deposition rate and plasma density uniformity from the center to the edge. In embodiments where the electronic controller is a variable capacitor, the electronic sensor can independently adjust the variable capacitor to maximize the deposition rate and minimize thickness non-uniformity.

[0034] The tuning circuit 236 may have a variable impedance that can be adjusted using the electronic controller 240. In the case that the electronic controller 240 is a variable capacitor, the capacitance range of each of the variable capacitors can be selected to provide an impedance range. This range may depend on the frequency and voltage characteristics of the plasma, and may have a minimum value within the capacitance range of each variable capacitor. Therefore, when the capacitance of the electronic controller 240 is at its minimum or maximum value, the impedance of the tuning circuit 236 may be high, resulting in a plasma shape with minimal air or lateral coverage on the substrate support. When the capacitance of the electronic controller 240 approaches the value that minimizes the impedance of the tuning circuit 236, the air coverage of the plasma may increase to its maximum value, effectively covering the entire operating area of ​​the substrate support 204. When the capacitance of the electronic controller 240 deviates from the minimum impedance setting, the plasma shape may contract from the chamber wall, and the air coverage of the substrate support may decrease.

[0035] Electronic sensor 238 can be used to tune circuit 236 in a dead loop. Depending on the type of sensor used, a current or voltage setpoint can be installed in each sensor, and the sensor can be equipped with control software that determines the adjustments to the individual electronic controller 240 to minimize deviation from the setpoint. Therefore, the plasma shape can be selected and dynamically controlled during processing. It should be understood that although the foregoing discussion is based on electronic controller 240, which can be a variable capacitor, any electronic component with adjustable characteristics can be used to provide adjustable impedance to tuning circuit 236.

[0036] Figure 3A cross-sectional view of an exemplary processing chamber 300 according to an embodiment of the present technology is shown. It should be understood that features ending with reference numerals similar to those discussed above are similar, except as described below. The processing chamber 300 includes a chamber body 302 and a cover assembly 306. The cover assembly 306 may include a cover 316, a spacer 390, a panel 315, an air chamber 312, and a barrier plate 313. The chamber body 302 includes a top (or first) end portion 301 and a bottom (or second) end portion 303. The cover assembly 306 may be coupled to the top end portion 301 of the chamber body 302. A substrate support 304 may be disposed on and movably positioned within the chamber body 302 via a shaft 344 extending through a shaft opening 309 defined via a second end portion of the chamber body 302. A pumping support 370, a pumping ring 360, the substrate support 304, and the shaft 344 are at least partially disposed within the chamber body 302. The chamber body 302, the pumping ring 360 and the panel 315 define a processing area 320 in which a substrate is processed on a substrate support 304.

[0037] In some embodiments, the chamber body 302 may include a chamber liner 307 positioned along an inner surface 308 of the chamber body 302 (e.g., the inner surface of the chamber body 302 facing the center of the chamber body 302). The chamber liner 307 may protect at least a portion of the inner surface 308 of the chamber body 302. The chamber liner 307 may be annular with a substantially rectangular cross-section, and the portion of the chamber liner 307 positioned thereon may completely surround the inner surface 308 of the chamber body 302. However, in other embodiments, the chamber liner may be partially annular (e.g., a quarter-annular, semi-annular, or similar), and may only surround a portion of the inner surface of the chamber body, and may have any cross-sectional shape corresponding to the cross-sectional shape of the chamber body 302. In other embodiments, multiple chamber liners may be present within the chamber body. Although the chamber liner 307 is depicted as being directly below the pumping ring 360, in other embodiments, the chamber liner may be spaced apart from the pumping ring. In yet another embodiment, the processing chamber may not include a chamber liner.

[0038] The chamber body 302 may define a protrusion 323 surrounding the inner circumference of the upper surface of the chamber body 302. The size and shape of the protrusion 323 may be designed to accommodate other components, such as the pump support 370 and the pump ring 360. Furthermore, the protrusion may have a depth d from the inner surface 308 of the chamber body 302 to the sidewall of the protrusion, this depth allowing those components to be located within the protrusion 323 such that the inner surfaces of one or more components positioned along the protrusion 323 are substantially coplanar with the inner surface 308 of the chamber body 302. "Substantially coplanar" may mean that the two surfaces are substantially parallel and less than or about 1 μm apart from each other, such as less than or about 0.8 μm, such as less than or about 0.6 μm, such as less than or about 0.4 μm, such as less than or about 0.2 μm, or about 0 μm. Additionally or alternatively, generally parallel may mean that the planes defined by the two surfaces change from parallel by less than about 30°, such as less than or about 20°, such as less than or about 10°, such as less than or about 5°, such as less than or about 2.5°, such as less than or about 1°, or such as about 0°. However, in other embodiments, the protrusion may have any desired depth. The protrusion 323 may be defined along the upper portion of the chamber body 302, such as extending below the top portion 301 of the chamber body 302, and thus may define a height h from the top portion 301 of the chamber body 302 to the bottom surface 326 of the protrusion. However, in other embodiments, the protrusion may be defined along any portion of the chamber body, including the bottom portion of the chamber body.

[0039] As described above, certain types of substrate processing methods benefit from cycling between high-pressure and low-pressure processes within the processing zone 320. For example, some methods may include cycling between chemical vapor deposition and deposition processes, which could involve cycling between different pressure levels within the processing zone 320 (e.g., by way of example only, between 5 Torr and 500 Torr). During this process cycle, there is a risk that undesirable byproducts may remain within the processing zone 320 and fall onto the substrate formed on the substrate support 304. As will be discussed further below, the pumping ring 360 and the pumping support 370 minimize this risk of undesirable byproducts falling onto the substrate by defining a process gas flow path away from the substrate.

[0040] Go to Figure 4A pumping support 370 may be positioned within a protrusion 323 between the pumping ring 360 and the chamber body 302. The pumping ring 360, the pumping support, and the chamber body 302 may be coupled together by welding, adhesive, releasable or non-releasable fasteners, or the like. The pumping support 370 includes a channel body 371, which is sized and shaped to be supported by the protrusion 323 while providing an upper surface 374 on which the pumping ring 360 may reside. For example, the channel body 371 may be an annular shape with a substantially circular cross-section; however, in other embodiments, the channel body may have any other geometry, such as the shape of the chamber body 302 and / or the pumping ring 360. The channel body 371 includes a bottom wall 376, an inner sidewall 377, and an outer sidewall 375. In an embodiment, the bottom wall 376 is sized to lie on the protrusion 323 and provides support between the chamber body 302 and the ring body 363. The inner sidewall 377 includes a surface 378 facing the processing area 320, the shape and size of which are designed to support the pumping ring 360 when it is positioned on the pumping support 370. The outer sidewall 375 extends from the bottom wall 376 by a height h2 to its top surface 375a to provide support for the flange 361, and the inner sidewall 377 extends from the bottom wall 376 by a height h3 to its top surface 377a. In one embodiment, the height h3 of the inner sidewall 377 may be less than the height h3 of the outer sidewall 375 to support the transition portion 362 and the ring body 363. However, in other embodiments, the heights of the inner and outer sidewalls may be substantially equal, or the height of the inner sidewall may be greater than the height of the outer sidewall.

[0041] In embodiments, the outer sidewall 375 and bottom wall 376 may define a protrusion 311 to accommodate another component, such as an insulating gasket 310. The insulating gasket 310 may be an annular ring having a substantially circular cross-section, providing insulation between the chamber body 302 and the outer sidewall 375 when positioned within the support protrusion 311, such as thermal insulation as in the embodiments. For example, in an embodiment, a thermal gasket may retain heat in the pumping ring, thereby reducing the likelihood of byproduct deposition due to large thermal differences between the processing area and the chamber body. However, in other embodiments, an insulating gasket may be absent, or the insulating gasket may have any or more of the geometry described above. For example, the pumping support may not define a protrusion, and instead, the outer sidewall of the pumping support may extend uninterruptedly from the bottom wall to support the flange of the pumping ring.

[0042] The pumping support 370 may define a pumping channel 372 that extends circumferentially around the pumping support 370 between an outer sidewall 375, an inner sidewall 377, and a bottom wall 376. The pumping channel 372 may include a top opening 379 having a width extending between the top surface 375a of the outer sidewall 375 and the top surface 377a of the inner sidewall 377. However, in other embodiments, the pumping support may include a top wall defining the top opening with a width smaller than the distance between the outer and inner sidewalls. In this example, the support opening may still extend circumferentially around the pumping support; however, the top opening includes a width smaller than the distance between the outer and inner sidewalls. Figure 4 The smaller width shown.

[0043] Bottom wall 376 defines a pumping support outlet 373 along a portion of bottom wall 376. Pumping support outlet 373 may be an orifice having a cylindrical shape and / or a shape corresponding to one or more of the plurality of orifices of pumping ring 360, as further described below. However, in other embodiments, the pumping outlet may have any other shape, including oval, rectangular, triangular, slit-shaped, or similar. Pumping support outlet 373 may be defined along bottom wall 376 at a location above gas discharge outlet 352 of chamber body 302 on a portion of pumping support 370. In other embodiments, more than one pumping outlet may be present (e.g., more than one outlet is present). As will be discussed further below, pumping support outlet 373, pumping passage 372, and top opening 379 facilitate fluid communication between outlet 352 and processing area 320 via pumping ring 360. The outlet 352 of the chamber body 302 is in fluid communication with a discharge system (not shown) coupled to a vacuum source to pump gas from the processing zone 320. In this way, the gas can flow freely along gas flow path A between the processing zone 320 and the outlet 352 to the vacuum source, such as... Figure 4 The arrows in the diagram are as indicated and will be described further below.

[0044] In an embodiment, the pumping ring 360 may be sized and shaped to be received within the chamber body 302 and located on one or more other components (e.g., the pumping support 370). The pumping ring 360 may be made of any suitable material (e.g., in an embodiment, aluminum, alumina, aluminum nitride, or other materials known in the art). Go to Figure 4The pumping ring 360 may include a ring body 363, a transition portion 362, and a flange 361. The size and shape of the ring body 363 may be designed such that when the pumping ring 360 is positioned within the chamber body 302, the surface 363a of the ring body 363 facing the processing area 320 may be substantially coplanar with the inner surface 308 of the chamber body 302. For example, the ring body 363 may have an annular shape or any other geometry as described above. However, in other embodiments, the ring body may have any other dimensions (e.g., such that the inner surface of the ring body is not coplanar with the inner surface of the chamber body) and shape (e.g., a cuboid, or the like). The ring body 363 may have an inner diameter greater than or about 10 inches, such as greater than or about 12 inches, such as greater than or about 13 inches, or may have an inner diameter less than or about 14 inches.

[0045] The transition portion 362 may extend from the ring body 363 at an angle greater than or about 15°, greater than or about 20°, greater than or about 25°, greater than or about 30°, greater than or about 35°, greater than or about 40°, or greater than or about 42.5°, or may include an angle less than or about 75°, such as less than or about 70°, such as less than or about 65°, such as less than or about 60°, such as less than or about 55°, such as less than or about 50°, such as less than or about 47.5°, or any range or value between these angles. As will be further discussed below, this angular range may facilitate allowing the process gas to flow more efficiently through the transition portion 362 (e.g., with less flow interruption) as the gas flows from the processing zone 320 through the pumping ring 360 to the pumping support 370, thus enabling more efficient evacuation of the process gas.

[0046] The transition portion 362 may have a surface 362a facing the isolator 390. As shown, in one embodiment, the isolator 390 may have a lower surface with a linear inclination, as will be discussed further below. In this embodiment, the linear inclination may reflect the angle of the transition portion 362 and is therefore generally parallel to the surface of the isolator 390 (i.e., the surface 395 of the isolator extension 393). This linear inclination allows the process gas to flow more efficiently from the processing area 320 through the transition portion 362. However, in other embodiments, the isolator-facing surface of the transition portion and / or the lower surface 395 of the isolator may have concave or convex curved surfaces that may be mirror images of each other or have different surface profiles. In yet another embodiment, the transition portion may have multiple curved and / or linear surfaces. In this example, each of these surfaces may be angled relative to each other to form a complex shape (e.g., forming a stepped surface or a generally curved surface), which together define the isolator-facing surface of the transition portion. In other embodiments, the pumping ring may not include a transition portion, but may consist only of a ring body and a flange that extend substantially orthogonally to each other.

[0047] Similarly, the isolator extension 393 may define an outer surface 395 facing the pumping ring 360. The outer surface 395 may be angled relative to the isolator wall 392 to define a portion of the gas flow path between the isolator extension 393 and the transition portion 362 of the pumping ring 360. For example, the outer surface 395 may extend from the ring body 363 at an angle greater than or about 15°, greater than or about 20°, greater than or about 25°, greater than or about 30°, greater than or about 35°, greater than or about 40°, or greater than or about 42.5°, or may include an angle less than or about 75°, such as less than or about 70°, such as less than or about 65°, such as less than or about 60°, such as less than or about 55°, such as less than or about 50°, such as less than or about 47.5°, or any range or value between these angles. The distance between the outer surface 395 and the transition portion 362 may be greater than or about 0.1 inches, such as greater than or about 0.15 inches, such as greater than or about 0.2 inches, or less than 0.5 inches, such as less than or about 0.4 inches, such as less than or about 0.3 inches, or any range or value between these. In some embodiments, the distance between the outer surface 395 and the transition portion 362 may be further increased away from the center of the processing area 320. However, in other embodiments, the distance between the outer surface of the spacer extension and the transition portion may remain unchanged. In yet another embodiment, the distance between the outer surface of the spacer extension and the transition portion may be further decreased away from the center of the processing area.

[0048] These angles and distances allow gas to flow efficiently between the isolator 390 and the pumping ring 360 during transitions from high to low pressure without unduly impeding flow rate. Simultaneously, the isolator 390 can act as a barrier between the panel 315 and the cover 316 to minimize parasitic plasma buildup along the cover 316. Therefore, these angles and distances can be optimized to maximize airflow between the isolator 390 and the pumping ring 360 while minimizing parasitic plasma arcing between the panel 315 and the cover 316. Although the outer surface 395 is depicted as straight, in other embodiments, the outer surface of the isolator extension may be curved, stepped, or similar. The isolator 390 and the pumping ring 360 can be combined as a gas distribution assembly.

[0049] Returning to the reference pumping ring 360, the flange 361 may extend from the transition portion 362 and the ring body 363 at an angle. For example, the flange 361 may form an angle with the transition portion 361 greater than or about 15°, greater than or about 20°, greater than or about 25°, greater than or about 30°, greater than or about 35°, greater than or about 40°, greater than or about 42.5°, or may include an angle with this transition portion less than or about 75°, such as less than or about 70°, such as less than or about 65°, such as less than or about 60°, such as less than or about 55°, such as less than or about 50°, such as less than or about 47.5°, or any range or value between these. In an embodiment, flange 361 may have an angle greater than or about 70°, such as greater than or about 75°, such as greater than or about 80°, such as greater than or about 85°, such as greater than or about 87.5°, or less than or about 110°, such as less than or about 105°, such as less than or about 100°, such as less than or about 95°, such as less than or about 92.5°, or any range or value between thereof, with respect to the ring body 363. In an embodiment, flange 361 may be substantially orthogonal to the ring body 363. Flange 361 may be substantially parallel to the top surface 305 of the chamber body 302.

[0050] refer to Figure 4 and Figure 5 The flange 361 may include a thickness t extending between the top surface 365a and the bottom surface 365b. As shown, a plurality of pores 364 extend through the thickness t of the flange 361 (e.g., from the top surface 365a and the bottom surface 365b of the flange 361). Therefore, in embodiments, when the pumping ring 360 is mounted within the chamber body 302, the plurality of pores 364 may be defined to have a size and shape that facilitates gas flow from the processing region 320 through the ring body 363, through the transition portion 362, and through the plurality of pores 364. For example, in embodiments such as those shown, all or part of the plurality of pores 364 defined along surfaces 365a, 365b may be defined to have a circular shape. However, in other embodiments, all or part of the plurality of pores may have any other shape, including oval, rectangular, triangular, slit-shaped, or similar.

[0051] In the embodiments, the thickness t can be greater than or about 0.1 cm, such as greater than or about 0.15 cm, such as greater than or about 0.2 cm, such as greater than or about 0.25 cm, such as greater than or about 0.3 cm, such as greater than or about 0.35 cm, such as greater than or about 0.4 cm, such as greater than or about 0.45 cm, such as greater than or about 0.5 cm, such as greater than or about 0.55 cm, such as greater than or about 0.6 cm, such as greater than or about 0.75 cm, such as greater than or about 1 cm, or such as less than or about 1.5 cm, such as less than or about 1.25 cm, such as less than or about 1 cm, such as less than or about 0.75 cm, such as less than or about 0.7 cm, such as less than or about 0.65 cm, such as less than or about 0.6 cm, or any range or value between these.

[0052] Nevertheless, it should be understood that while any shape may be chosen, in embodiments, the plurality of apertures may have a top (or first) cross-sectional width (e.g., the diameter if circular) at the top surface 365a and a bottom (or second) cross-sectional width at the bottom surface 365b. In embodiments, both the top and bottom cross-sectional widths may be substantially equal and may have any one or more widths, and the apertures may be defined to have a substantially cylindrical cross-sectional shape (e.g., if the apertures are circular).

[0053] For example, in embodiments, the width of the top and / or bottom cross-section may be greater than or about 0.1 cm, such as greater than or about 0.15 cm, such as greater than or about 0.2 cm, such as greater than or about 0.25 cm, such as greater than or about 0.3 cm, such as greater than or about 0.35 cm, such as greater than or about 0.4 cm, such as greater than or about 0.45 cm, such as greater than or about 0.5 cm, such as greater than or about 0.55 cm, such as greater than or about 0.6 cm, such as greater than or about 0.75 cm, such as greater than or about 1 cm, such as greater than or about 1.25 cm, such as greater than or about 1.5 cm, such as less than or about 2.5 cm, such as less than or about 2.25 cm, such as less than or about 2 cm, such as less than or about 1.75 cm, such as less than or about 1.5 cm, such as less than or about 1.25 cm, such as less than or about 1 cm, such as less than or about 0.75 cm, such as less than or about 0.7 cm, such as less than or about 0.65 cm. Width of cm, such as less than or about 0.6 cm, or any range or value in between.

[0054] However, in embodiments, the top cross-sectional width may be smaller than the bottom cross-sectional width, thereby defining the conical cross-sectional shape of the aperture 364 (e.g., if the first and second cross-sectional widths are circular), thus allowing for further tuning of the flow conduction. In such embodiments, the bottom cross-sectional width may be 30% or greater of the top cross-sectional width, such as about 50% or greater, such as about 75% or greater, such as about 100% or greater, such as about 125% or greater, such as about 150% or greater, such as about 175% or greater, such as about 200% or greater, such as about 225% or greater, such as about 250% or greater, such as about 275% or greater, such as where the bottom cross-sectional width is about 300% or greater of the top cross-sectional width.

[0055] For example, in one embodiment, the flange may define the bottom cross-sectional width to be greater than the top cross-sectional width, such that the aperture is defined to have a width greater than the top cross-sectional width. Figure 4 The opposite truncated conical shape is shown. Although Figure 4 The orifice 364 is depicted as having a linear funnel shape, but in other embodiments, the flow channel may have a curved or stepped shape. Nevertheless, in such embodiments, the top cross-sectional width may be greater than or about 0.1 cm, such as greater than or about 0.15 cm, such as greater than or about 0.2 cm, such as greater than or about 0.25 cm, such as greater than or about 0.3 cm, such as greater than or about 0.35 cm, such as greater than or about 0.4 cm, such as greater than or about 0.45 cm, such as greater than or about 0.5 cm, such as greater than or about 0.55 cm, such as greater than or about 0.6 cm, such as greater than or about 0.75 cm, such as greater than or about 1 cm, or such as less than or about 1.25 cm, such as less than or about 1 cm, such as less than or about 0.75 cm, such as less than or about 0.7 cm, such as less than or about 0.65 cm, such as less than or about 0.6 cm, or any range or value between these. In addition, the width of the bottom cross section may be greater than or about 0.6 cm, such as greater than or about 0.75 cm, such as greater than or about 1 cm, such as greater than or about 1.25 cm, such as greater than or about 1.5 cm, such as greater than or about 1.6 cm, or such as less than or about 2.5 cm, such as less than or about 2.25 cm, such as less than or about 2 cm, such as less than or about 1.75 cm, or any range or value between these.

[0056] Each of the plurality of pores 364 may define a void volume passing through the flange 361. Therefore, the flange 361 defines a total void volume passing through the flange 361 corresponding to the total volume of the plurality of pores 364. The flange 361 may be divided into one or more radially divided segments (e.g., one or more segments), such as... Figure 5The segments 380-383 shown each comprise a certain number of pores from a plurality of pores 364. Therefore, each of segments 380-383 defines a segment void volume corresponding to the sum of the void volumes of each of segments 380-383. And thus, a corresponding segment void volume. In other embodiments, the flange may be divided into any number of segments, such as two, three, five, or the like.

[0057] The segmental void volume of each segment 380-383 can be adjusted depending on the desired flow rate of the gas discharged via selected segments 380-383 of flange 361. For example, when pumping ring 360 is installed in chamber body 302, only one gas discharge outlet 352 may exist for discharging gas from processing area 320. This outlet may be closer to a segment of flange 361 than another. For example, as Figure 3 As shown, in this embodiment, the gas outlet 352 may be located below section 383, adjacent to sections 381 and 382, ​​and spaced apart from section 380 (e.g., opposite to section 380). However, it should be understood that other orientations may be used herein. Therefore, if the number of pores and / or the pore volume of each section 380-383 are equal, the airflow from the processing area 320 through the plurality of pores 364 to the gas outlet 352 may be non-uniform, as some sections 380-383 adjacent to the gas outlet 352 (i.e., section 383) exhibit higher pressures while other sections 380-383 (i.e., section 380) spaced apart from the gas outlet 352 exhibit lower pressures.

[0058] Therefore, in an embodiment, in order to provide a more uniform flow rate of process gas discharged across each segment 380-383 via flange 361 and to minimize the pressure difference of process gas across each segment 380-383 of flange 361, flange 361 may define a smaller segment void volume in one or more of the segments 380-383 located above or near gas discharge outlet 352, and a larger cross-sectional volume in segments spaced apart from or further away from the outlet.

[0059] For example, Figure 5 An example of a flange 361 defining four segments 380-383 is depicted. In this embodiment, each of the segments includes a different segment clearance volume. However, in other examples, one or more of the segments 380-383 may include similar segment clearance volumes (e.g., segments 381, 382). By way of example only, the outlet may be located below segment 383, adjacent to segments 381 and 382 at roughly equal intervals, and spaced apart from segment 380. Figure 5In this embodiment, the difference in void volume among segments is shown based on the difference in the number of pores 364 present in each of segments 380-383, wherein segment 383 may include the fewest pores, segments 381 and / or 382 include more pores than segment 380 (e.g., having a similar number of pores 364), and segment 380 may include more pores than segments 381-383. In embodiments where, for example, the number of pores varies for one or more of segments 380-383, the void volume of each of the pores 364 may be substantially equal. Therefore, in the illustrated example, the segmental void volume of segment 383 can be smaller than the segmental void volume of each of segments 380-382, and the segmental void volume of each of segments 381 and 382 can be smaller than the segmental void volume of segment 380, because the total number of pores 364 in one or more of segments 380-383 is different. In this way, by limiting the amount of gas that can flow through segment 383 compared to segments 380-382, the flow rate and pressure of the gas discharged via flange 361 can be balanced.

[0060] In another example, the pores may be uniformly distributed along the flange within each segment, with one segment outside the flange comprising a greater number of pores than the other. In this example, to provide a uniform gas flow rate and pressure via the flange, the void volume of each pore (i.e., the shape and / or size of each individual pore) may be adjusted such that the void volume of each pore, or the segmental void volume of a pore in a segment above the gas outlet, is reduced relative to segments adjacent to or spaced apart from the outlet. Thus, each segment of the flange may have a substantially equal number of pores, but with different segmental void volumes due to the different void volumes of each pore or each segment. In this way, the gas flow rate and pressure via the flange can be uniform due to the varying void volumes along the flange. However, it should be understood that in other embodiments, the flange may define a uniform distribution of pores along the flange and be equivalent for each void volume (e.g., where the distance from the outlet to each pore is equal).

[0061] In other embodiments, any number of segments may exist, each comprising a different segmental void volume. In other embodiments, a gradual change may exist in the void volume from one point along the flange to another, rather than in different segments each having a specific segmental void volume. In other embodiments, multiple segments may exist along the flange, each comprising an equivalent void volume. For example, two gas outlets may exist, with adjacent segments of the flange positioned relative to each other. In this example, the segmental void volumes of those segments of the flange adjacent to the gas outlets may be equal to each other, but may differ from the segmental void volumes of other segments of the flange to ensure a uniform gas flow rate and pressure entering the pumping ring.

[0062] In some embodiments, the chamber body, pumping ring, and pumping support are not separate components. Instead, these components may be integrally formed together. In other embodiments, only two of these components may be integrally formed together (e.g., the pumping ring and chamber body, the pumping ring and pumping support, or the pumping support and chamber body).

[0063] However, returning to the cover 316 of the cover assembly 306, the cover 316 may be coupled to the top portion 301 of the chamber body 302 (e.g., via welding, adhesive, releasable or non-releasable fasteners, or the like). The cover 316 may include a central opening, the size and shape of which are designed to accommodate one or more of other components of the cover assembly 306 (e.g., the gas chamber 312, the panel 315, and the barrier plate 313). The cover 316 may be coupled to ground such that the cover 316 is not charged. In an embodiment, the cover 316 may have an inner diameter greater than or about 7 inches, such as greater than or about 8 inches, such as greater than or about 9 inches, such as greater than or about 10 inches, such as greater than or about 11 inches, such as greater than or about 12 inches, such as greater than or about 13 inches, such as greater than or about 14 inches, or such as less than or about 21 inches, such as less than or about 20 inches, such as less than or about 19 inches, such as less than or about 18 inches, such as less than or about 17 inches, such as less than or about 16 inches, such as less than or about 15 inches, or any range or value thereof.

[0064] In embodiments, the gas chamber 312, panel 315, and baffle plate 313 may facilitate the distribution of process gases (e.g., precursors) from a fluidly coupled gas source in the gas chamber 312 to the processing area 320. However, the baffle plate 313 may be disposed between the gas chamber 312 and the panel 315. A radio frequency (“RF”) source may be coupled to the panel 315 to generate a plasma region between the panel 315 and the substrate support 304. In some embodiments, the RF source may be coupled to other portions of the chamber body 302, such as the panel 315, to facilitate plasma generation. The panel 315 may have an outer diameter greater than or about 9 inches, such as greater than or about 10 inches, such as greater than or about 11 inches, such as greater than or about 12 inches, such as greater than or about 13 inches, or may have an outer diameter less than or about 16 inches, such as less than or about 15 inches, such as less than or about 14 inches.

[0065] Go to Figure 4The spacer 390 may be disposed on the upper surface 317a of the edge 317 of the cover 316. The spacer 390 may form a support for mounting the panel 315. The spacer 390 may be partially housed within the chamber body 302. The spacer 390 may be formed of ceramic, plastic or other insulating material. The spacer 390 includes a spacer base 391, a spacer wall 392 and a spacer extension 393. The spacer base 391 and the spacer wall 392 may be positioned relative to each other at an angle greater than or about 70°, such as greater than or about 75°, such as greater than or about 80°, such as greater than or about 85°, such as greater than or about 87.5°, or less than or about 110°, such as less than or about 105°, such as less than or about 100°, such as less than or about 95°, such as less than or about 92.5°, or any range or value between thereof. In one embodiment, the spacer base 391 may be generally orthogonal to the spacer wall 392. In this way, in one embodiment, the spacer base 391 and the spacer wall 392 may define an angle facing outwards from the spacer 390 to provide a mounting surface corresponding to the edge 317 of the cover 316, and their size and shape may be designed to accommodate a lower surface 318 extending around the outer radius of the panel 315.

[0066] The isolator extension 393 may extend from the isolator wall 392 at an angle greater than or about 15°, greater than or about 20°, greater than or about 25°, greater than or about 30°, greater than or about 35°, greater than or about 40°, greater than or about 42.5°, or may include an angle less than or about 75°, such as less than or about 70°, such as less than or about 65°, such as less than or about 60°, such as less than or about 55°, such as less than or about 50°, such as less than or about 47.5°, or any range or value therebetween, and may be substantially or completely positioned within the chamber body 302. The isolator extension 393 may be positioned between the cover 316 and the bottom portion 319 of the panel 315 received within the chamber body 302. The isolator extension 393 may extend a certain distance within the chamber body such that the tip 396 of the isolator extension 393 is substantially coplanar with the bottom surface 397 of the panel 315 extending within the chamber body 302. However, in other embodiments, the isolator extension may extend beyond the bottom surface of the panel. In this way, the isolator extension 393 can serve as a barrier between the cover 316 and the panel 315 within the chamber body 302. In other words, the isolator extension 393 is positioned between the cover 316 and the panel 315 to isolate the cover 316 and the panel 315 radially from the center of the chamber body 302. In this way, the flow of process gases and direct electrical paths between the cover 316 and the panel 315 are prevented (e.g., at least in part due to the removal of the line of sight or direct flow / electrical path between the cover 316 and the panel 315), thereby reducing or even eliminating parasitic luminescence. The tip 396 of the isolator extension 393 may have an inner diameter greater than or about 9 inches, greater than or about 9.5 inches, such as greater than or about 10 inches, such as greater than or about 10.5 inches, such as greater than or about 11 inches, such as greater than or about 11.5 inches, such as greater than or about 12 inches, such as greater than or about 12.5 inches, such as greater than or about 13 inches, or may have an inner diameter less than or about 16 inches, such as less than or about 15.5 inches, such as less than or about 15 inches, such as less than or about 14.5 inches, such as less than or about 14 inches, such as less than or about 13.5 inches, or any range or value thereof.

[0067] For example, without the isolator extension, the bottom portion of the panel would be visually exposed to the cover. This direct exposure can be problematic because, during use, when the panel is charged by an RF source to generate plasma in the processing area, the plasma may generate an arc between the panel and the cover, forming parasitic plasma. However, according to this technology, by utilizing the isolator extension 393 located between the bottom portion 319 of the panel 315 and the cover 316, the formation of parasitic plasma is minimized or even eliminated.

[0068] The isolator extension 393 may define an inner surface 394 facing the panel 315. The inner surface 394 may be angled to minimize the gap between the isolator extension 393 and the panel 315. In this way, gas within the processing area 320 may flow along a specific gas flow path (e.g., as...). Figure 4 The gas flow path A, indicated by the middle arrow, is guided instead of permeating between the separator 390 and the panel 315.

[0069] Continue to refer to Figure 4 Process gas can be evacuated from the processing zone 320 along a gas flow path A downstream of the outlet 352. The exhaust system can be activated to begin pumping gas from the processing zone 320 to a vacuum source coupled to the exhaust system. Thus, gas can flow downstream from the processing zone 320 to a vacuum along flow path A. Gas flow path A may include pumping gas from the processing zone 320, around the ring body 363, above the transition portion 362, and downwards through a plurality of orifices 364 in the pumping ring 360. Specifically, gas can flow at an angle from the processing zone 320 through a space defined between the isolator extension 393 and the transition portion 362. Gas can flow laterally over the flange 361 and downwards through the orifices 364 from this space. Furthermore, gas can flow downwards through the plurality of orifices 364 into the top opening 379 of the pumping support 370 and the pumping channel 372. Next, the gas can flow within and around the pumping channel 372, and flow downwards through the pumping support outlet 373 into the gas discharge outlet 352. Then, the gas can flow from the gas discharge outlet 352 into the vacuum source.

[0070] Such flow paths are advantageous because the multi-angle flow paths within the processing zone 320 and the vertical flow of the gas minimize unwanted flow of byproducts (e.g., precursor particles) backward (e.g., into the processing zone 320) via the pumping ring 360 during changes in processing conditions (e.g., pressure changes). Therefore, the risk is that unwanted byproducts within the pumping ring 360 or gas flow path A may inadvertently return to the processing zone 320 and interact with the substrate being processed. That is, as described above, conventional systems with laterally extending pumping paths via the pumping ring have little or no variation in the direction of the flow path, which provides little or no resistance path for precursor particles. Therefore, such precursor particles can easily return to the processing zone. As mentioned above, this presents an additional problem for horizontally extending pumping paths because the flow path extends directly above the processed substrate.

[0071] Figure 6The operation of an exemplary method 400 for semiconductor processing according to some embodiments of the present technology is illustrated. This method can be performed in various processing chambers, including the processing system 300 described above, which may include gas distribution components and other features according to embodiments of the present technology. Method 400 may include several optional operations, which may or may not be specifically associated with some embodiments of the method according to the present technology.

[0072] Method 400 may include a processing method that may include operations for forming a hard mask film or other deposition operations. This method may include optional operations prior to the initiation of method 400, or the method may include additional operations. For example, method 400 may include operations performed in a different order than shown. In some embodiments, method 400 may include inducing one or more precursors into a processing chamber at operation 405 under a first pressure. The first pressure may include a pressure greater than about 200 Torr, such as greater than or about 300 Torr, such as greater than or about 400 Torr, such as greater than or about 500 Torr, or any range or value between these pressures. For example, the precursor may flow into a chamber such as included in system 300, and the precursor may be passed through one or more of a gas box, a baffle plate, or a panel before being delivered to the processing area of ​​the chamber. In some embodiments, the precursor may be or include a carbon-containing precursor, or any precursor known in the art.

[0073] In operation 405, for example by providing RF power to the panel to generate plasma, a plasma of the precursor can be generated within the processing area. At operation 410, the material formed in the plasma (such as a carbon-containing material) can be deposited onto the substrate. In this embodiment, operation 410 can be a thermal deposition operation. After deposition operation 410, at operation 415, the process gas comprising the precursor can be discharged from the chamber at a very high efficiency level, as described above, such as via a pumping ring 360, a pumping channel, and using the cover assembly as described above.

[0074] After evacuation, a precursor, which may be the same or different, may be allowed to flow into the chamber at a second pressure at operation 420, such as by changing the pressure of the chamber. The second pressure may be greater than or less than the first pressure. The second pressure may include pressures less than about 100 Torr, such as less than or about 75 Torr, such as less than or about 50 Torr, such as less than or about 25 Torr, such as less than or about 10 Torr, such as less than or about 5 Torr, or any range or value between these. However, it should be understood that the values ​​of the first and second pressures are interchangeable, as high-pressure operation may occur before low-pressure operation. Surprisingly, at least in part due to the pumping ring, pumping channel, and / or cap assembly of the pending claims, few or no defects are formed on the substrate. That is, due to the multi-angle flow path and vertical flow channel, even drastic pressure changes do not cause backflow of contaminants. Nevertheless, in embodiments, the method may include generating plasma at a second pressure at operation 425 and depositing material on the substrate at a second atmospheric pressure. Furthermore, it should be understood that more than two evacuations and pressure changes are possible. In an embodiment, the film formed at operation 425 can be treated at operation 430 using treatment methods known in this art. Nevertheless, after deposition under a second pressure, the chamber can be evacuated at a very high efficiency level as described above, such as via pumping ring 360, pumping channel, and using the cap assembly as described above at operation 435.

[0075] The subject matter of embodiments of the invention is described herein in a manner particularly in order to satisfy legal requirements, but this specification is not intended to limit the scope of the claims. The claimed subject matter may be embodied in other ways, may include different elements or steps, and may be used with other prior or future technologies. This specification should not be construed as implying any particular order or arrangement of the various steps or elements, except where the order of individual steps or the arrangement of elements is expressly described.

[0076] As used herein, the terms “about,” “approximately,” or “substantially” may be interpreted as within the scope that a person skilled in the art would expect in light of the specification.

[0077] In the foregoing description, numerous specific details have been set forth for purposes of explanation in order to provide a thorough understanding of the various embodiments. However, it will be apparent, however, that some embodiments may be practiced without some of these specific details. In other examples, well-known structures and devices are illustrated in block diagram form.

[0078] The foregoing description provides exemplary embodiments only and is not intended to limit the scope, applicability, or configuration of this disclosure. Rather, the foregoing description of various embodiments will provide a disclosure that can be implemented for carrying out at least one embodiment. It should be understood that various changes may be made to the function and arrangement of elements without departing from the spirit and scope of some embodiments set forth in the appended claims.

[0079] Furthermore, it should be noted that individual embodiments may have been described as processes depicted as flowcharts, flow diagrams, data flow diagrams, structural diagrams, or block diagrams. While flowcharts may describe operations as a sequential process, many operations may be performed in parallel or concurrently. Additionally, the order of operations can be rearranged. A process terminates upon completion of its operations, but may also have additional steps not included in the figures. A process may correspond to a method, function, procedure, subroutine, subroutine, etc. When a process corresponds to a function, its termination may correspond to the function returning to the calling function or the main function.

[0080] The term "computer-readable medium" includes, but is not limited to, portable or fixed storage devices, optical storage devices, wireless channels, and various other media capable of storing, containing, or carrying instructions and / or data. A code segment or machine-executable instruction may represent a procedure, function, subroutine, program, routine, subroutine, module, software package, class, or any combination of instructions, data structures, or program statements. A code segment can be coupled to another code segment or hardware circuit by passing and / or receiving information, data, arguments, parameters, or memory contents. Information, arguments, parameters, data, etc., can be passed, forwarded, or transmitted via any suitable means, including memory sharing, message passing, token passing, network transmission, etc.

[0081] Furthermore, the embodiments may be implemented by hardware, software, firmware, middleware, microcode, hardware description languages, or any combination thereof. When implemented as software, firmware, middleware, or microcode, the program code or code segments used to perform the necessary tasks may be stored in a machine-readable medium. The processor may execute these necessary tasks.

[0082] In the foregoing specification, features are described with reference to specific embodiments thereof, but it should be understood that not all embodiments are limited thereto. Various features and aspects of some embodiments may be used individually or in combination. Furthermore, without departing from the broader spirit and scope of the specification, embodiments may be used in any number of environments and applications beyond those described herein. Therefore, the specification and drawings are to be regarded as illustrative rather than restrictive.

[0083] Additionally, for illustrative purposes, the methods are described in a specific order. It should be understood that in alternative embodiments, the methods may be performed in a different order than described. It should also be understood that the methods described above may be executed by hardware components, or may be embodied by a sequence of machine-executable instructions that can be used to cause a machine (such as a general-purpose or special-purpose processor, or logic circuitry programmed with instructions) to execute the methods. These machine-executable instructions may be stored on one or more machine-readable media (such as CD-ROMs or other types of optical discs, floppy diskettes, ROMs, RAMs, EPROMs, EEPROMs, magnetic or optical cards, flash memory, or other types of machine-readable media suitable for storing electronic instructions). Alternatively, the methods may be executed by a combination of hardware and software.

Claims

1. A substrate processing chamber, the substrate processing chamber comprising: The chamber body includes a first end and a second end; A cover is coupled to the first end of the chamber body; A spacer is disposed on the upper surface of the cover; A panel is disposed on the upper surface of the isolation member; A substrate support is disposed on a shaft extending through the second end of the chamber body, wherein the processing area is defined between the substrate support and the panel; A pumping ring, positioned within the chamber body, wherein the pumping ring includes a flange extending in a plane generally parallel to the top surface of the substrate support, the flange defining a plurality of orifices; and The discharge outlet is in fluid communication with the system upstream pipeline and the plurality of pores.

2. The substrate processing chamber as described in claim 1, wherein: The flange includes a first section and a second section; The first section defines a first portion of the plurality of pores, and the second section defines a second portion of the plurality of pores; and The first segment defines a first segment void volume based on the pores of the first portion, and the second segment defines a second segment void volume based on the pores of the second portion, wherein the void volume of the first segment is smaller than the void volume of the second segment.

3. The substrate processing chamber of claim 2, wherein the first section is closer to the discharge outlet than the second section.

4. The substrate processing chamber of claim 3, wherein the pores of the first portion comprise a smaller number of pores than the pores of the second portion.

5. The substrate processing chamber of claim 3, wherein the pores of the first portion include the same number of pores as the pores of the second portion.

6. The substrate processing chamber of claim 5, wherein each pore of the first portion comprises a smaller void volume than each pore of the second portion.

7. The substrate processing chamber of claim 1, further comprising a pumping support disposed between the pumping ring and the chamber body, wherein the pumping support defines: Pumping channels are in fluid communication with the plurality of pores; and The pump outlet is in fluid communication with the pumping channel and the upstream pipeline of the system.

8. The substrate processing chamber of claim 7, wherein the bottom surface of the spacer is substantially coplanar with the bottom surface of the panel.

9. The substrate processing chamber as claimed in claim 8, wherein: The isolator includes an isolator body and an isolator extension extending from the isolator body at an angle, wherein the isolator extension forms the bottom surface of the isolator.

10. A gas distribution assembly, comprising: A pumping ring includes a ring body, a transition portion, and a flange extending laterally from the ring body, wherein: The flange defines a plurality of apertures extending from the top surface of the flange to the bottom surface of the flange; The flange includes a first section and a second section; The first section of the flange defines a first portion of the plurality of pores, and the second section of the flange defines a second portion of the plurality of pores; and The first segment defines a first segment void volume based on the pores of the first portion, and the second segment defines a second segment void volume based on the pores of the second portion, wherein the void volume of the first segment is smaller than the void volume of the second segment; and The isolation component includes a base portion, a main body portion, and an extension portion. The extension of the isolation member is disposed above and substantially parallel to the transition portion of the pumping ring.

11. The gas distribution assembly of claim 10, wherein at least one of the plurality of pores comprises a truncated conical shape.

12. The gas distribution assembly of claim 11, wherein: The flange includes a top surface and a bottom surface; and The top surface defines a first width of the at least one aperture, and the bottom surface defines a second width of the at least one aperture, the first width being smaller than the second width.

13. The gas distribution assembly of claim 11, wherein the pores of the first portion comprise a smaller number of pores than the pores of the second portion.

14. The gas distribution assembly of claim 11, wherein the pores of the first portion comprise the same number of pores as the pores of the second portion.

15. The gas distribution assembly of claim 14, wherein each pore of the first portion comprises a smaller void volume than each pore of the second portion.

16. The gas distribution assembly of claim 10, wherein: The flange includes a third segment positioned between the first segment and the second segment; The third section defines a third portion of the plurality of pores; and The third section defines the void volume of the third section based on the pores of the third part, wherein the void volume of the third section is smaller than the void volume of the second section and larger than the void volume of the first section.

17. The gas distribution assembly of claim 16, wherein the pores of the third portion comprise fewer pores than the pores of the second portion and more pores than the pores of the first portion.

18. The gas distribution assembly of claim 16, wherein the pores of the third portion comprise an equal number of pores to at least one of the pores of the first portion and the pores of the second portion.

19. The gas distribution assembly of claim 18, wherein each pore of the third portion comprises a smaller void volume than each pore of at least one of the pores of the first portion or the second portion.

20. A method for semiconductor processing, comprising: Carbon-containing precursors are introduced into a processing chamber, wherein the processing chamber comprises: The chamber body includes a first end and a second end; A cover is coupled to the first end of the chamber body; A spacer is disposed on the upper surface of the cover; A panel is disposed on the upper surface of the isolation member; A substrate support is disposed on a shaft extending through the second end of the chamber body, wherein the processing area is defined between the substrate support and the panel; A pumping ring, positioned within the chamber body, wherein the pumping ring includes a flange extending in a plane substantially parallel to the top surface of the substrate support, the flange defining a plurality of orifices; and The discharge outlet is in communication with the system's upstream piping and the plurality of pore fluid lines; and Gas is discharged from the chamber body of the processing chamber to the discharge outlet via the pumping ring.

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