Optical proximity correction method and device, electronic equipment and storage medium

Abstract

The invention provides an optical proximity correction method and device, electronic equipment and a storage medium, and relates to the technical field of semiconductors. The method comprises the steps that a design layout of a through hole layer and a plurality of deviation values obtained after photoetching is conducted on a plurality of preset patterns in advance are obtained, the design layout comprises a plurality of initial through hole patterns, and the deviation values are the deviation values between the preset patterns and the corresponding photoetching patterns; determining a pre-movement distance according to the plurality of deviation values; adjusting the plurality of initial through hole patterns according to the pre-moving distance to obtain a plurality of pre-moving through hole patterns; and performing optical proximity correction on the plurality of pre-moved through hole patterns to obtain a plurality of target through hole patterns. The optical proximity correction frequency can be reduced, and the optical proximity correction efficiency can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to an optical proximity correction method, apparatus, electronic device, and storage medium. Background Technology

[0002] When using a mask to expose a wafer, the diffraction and interference of light can cause a discrepancy between the actual pattern after exposure and etching and the pattern in the design layer.

[0003] To address this technical challenge, semiconductor fabs perform Optical Proximity Correction (OPC) on the initial design layout. During the OPC process on the Hole Layer (CT or Via), the mask pattern needs to be iteratively adjusted to ensure that the final lithography pattern remains consistent with the initial design pattern.

[0004] The runtime of the optical proximity effect correction scheme OPC Recipe is mainly divided into the optical proximity effect correction part and the detection part of the correction result. The runtime of the optical proximity effect correction part depends on the number of OPC iterations. Existing schemes require multiple iterations, resulting in an excessively long OPC runtime and a significant waste of time. Summary of the Invention

[0005] The purpose of this application is to address the shortcomings of the prior art by providing an optical proximity correction method, apparatus, electronic device, and storage medium, so as to reduce the number of optical proximity corrections and improve the efficiency of optical proximity correction.

[0006] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows: In a first aspect, embodiments of this application provide an optical proximity correction method, the method comprising: The design layout of the via layer and multiple deviation values ​​obtained after photolithography of multiple preset patterns are obtained. The design layout includes multiple initial via patterns, and the deviation values ​​are the deviation values ​​between the preset patterns and the corresponding photolithographic patterns. The pre-movement distance is determined based on the multiple deviation values; Based on the pre-moving distance, adjust the multiple initial through-hole patterns to obtain multiple pre-moving through-hole patterns; Optical proximity correction is performed on multiple pre-moving through-hole patterns to obtain multiple target through-hole patterns.

[0007] Optionally, determining the pre-movement distance based on a plurality of said deviation values ​​includes: The pre-movement distance is determined based on the maximum and minimum deviation values ​​among the multiple deviation values.

[0008] Optionally, before determining the pre-movement distance based on the maximum and minimum deviation values ​​among the plurality of deviation values, the method further includes: Multiple anchor point graphics are determined from a plurality of preset graphics, wherein the multiple anchor point graphics have the same size but different pitches with other adjacent preset graphics; The maximum and minimum deviation values ​​are determined based on the deviation values ​​between the multiple anchor point patterns and the corresponding photolithographic patterns.

[0009] Optionally, determining the pre-movement distance based on a plurality of said deviation values ​​includes: The pre-movement distance is determined based on the multiple deviation values ​​and the graphic weights of the multiple preset graphics.

[0010] Optionally, before determining the pre-movement distance based on the plurality of deviation values ​​and the graphic weights of the plurality of preset graphics, the method further includes: Determine the number of graphics of the same size among the multiple preset graphics; The weight of each graphic is determined based on the ratio of the number of each graphic to the total number of preset graphics.

[0011] Optionally, determining the pre-movement distance based on a plurality of said deviation values ​​includes: A lookup table is established based on the size, spacing, and deviation values ​​of the preset graphics; Based on the size and spacing of each initial through-hole pattern, the pre-movement distance of each initial through-hole pattern is determined by looking up the lookup table.

[0012] Optionally, determining the pre-moving distance of each initial through-hole pattern by looking up the lookup table based on the size and spacing of each initial through-hole pattern includes: Based on the size and spacing of each of the initial through-hole patterns, a plurality of initial deviation values ​​that are closest to the size and spacing of each of the initial through-hole patterns are determined by searching the lookup table; Interpolation is performed on the multiple initial deviation values ​​to determine the pre-movement distance of each initial through-hole pattern.

[0013] Secondly, embodiments of this application also provide an optical proximity correction device, the device comprising: The information acquisition module is used to acquire the design layout of the via layer and multiple deviation values ​​obtained after photolithography of multiple preset patterns. The design layout includes multiple initial via patterns, and the deviation values ​​are the deviation values ​​between the preset patterns and the corresponding photolithographic patterns. A pre-movement distance acquisition module is used to determine the pre-movement distance based on multiple deviation values; The pattern adjustment module is used to adjust multiple initial through-hole patterns according to the pre-moving distance to obtain multiple pre-moving through-hole patterns; The pattern correction module is used to perform optical proximity correction on multiple pre-moving through-hole patterns to obtain multiple target through-hole patterns.

[0014] Optionally, the pre-movement distance acquisition module is specifically used to determine the pre-movement distance based on the maximum and minimum deviation values ​​among the plurality of deviation values.

[0015] Optionally, the pre-movement distance acquisition module is further configured to determine multiple anchor point patterns from multiple preset patterns, wherein the multiple anchor point patterns have the same size and different pitches from other adjacent preset patterns; and to determine the maximum deviation value and the minimum deviation value based on the deviation values ​​between the multiple anchor point patterns and the corresponding lithographic patterns.

[0016] Optionally, the pre-movement distance acquisition module is specifically used to determine the pre-movement distance based on the multiple deviation values ​​and the graphic weights of the multiple preset graphics.

[0017] Optionally, the pre-movement distance acquisition module is further configured to determine the number of graphics of the same size among the multiple preset graphics; and to determine the graphic weight of each preset graphic based on the ratio of the number of each graphic to the total number of graphics in the preset graphics.

[0018] Optionally, the pre-movement distance acquisition module is specifically used to establish a lookup table based on the size and spacing of the multiple preset graphics and the multiple deviation values; and to determine the pre-movement distance of each initial through-hole graphic by searching the lookup table based on the size and spacing of each initial through-hole graphic.

[0019] Optionally, the pre-movement distance acquisition module is further configured to, based on the size and spacing of each initial through-hole pattern, use the lookup table to find and determine a plurality of initial deviation values ​​that are closest to the size and spacing of each initial through-hole pattern; and to perform interpolation processing on the plurality of initial deviation values ​​to determine the pre-movement distance of each initial through-hole pattern.

[0020] Thirdly, embodiments of this application also provide an electronic device, including: a processor, a storage medium, and a bus, wherein the storage medium stores program instructions executable by the processor, and when the electronic device is running, the processor communicates with the storage medium via the bus, and the processor executes the program instructions to perform the steps of the optical proximity correction method as described in any of the first aspects.

[0021] Fourthly, embodiments of this application also provide a computer-readable storage medium storing a computer program, which, when executed by a processor, performs the steps of the optical proximity correction method as described in any of the first aspects.

[0022] The beneficial effects of this application are: The optical proximity correction method, apparatus, electronic device, and storage medium provided in this application determine a pre-moving distance based on multiple deviation values ​​after multiple preset pattern photolithography, so as to adjust the size of the initial via pattern and obtain a pre-moving via pattern, making the pre-moving via pattern closer to the target state after OPC correction. Optical proximity correction based on the pre-moving via pattern can reduce the number of iterations of optical proximity correction of the pattern and improve the efficiency of optical proximity correction. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 1 ; Figure 2 This is a schematic diagram of the pre-movement of the through-hole pattern provided in an embodiment of this application; Figure 3 A comparison chart of iteration count and edge placement error provided for embodiments of this application; Figure 4 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 2 ; Figure 5 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 3 ; Figure 6 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 4 ; Figure 7 Comparative schematic diagrams provided for embodiments of this application; Figure 8 A comparison chart of test results provided for embodiments of this application; Figure 9 This is a schematic diagram of the optical proximity correction device provided in the embodiments of this application; Figure 10 A schematic diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of this application, but not all embodiments.

[0026] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0027] Furthermore, the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Additionally, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0028] It should be noted that, where there is no conflict, the features in the embodiments of this application can be combined with each other.

[0029] Due to the diffraction and interference of light, as well as the proximity effect of different mask patterns, there is a deviation between the actual pattern after photolithography and the design pattern. Therefore, before photolithography, it is necessary to perform OPC on the mask pattern so that the final photolithographic pattern generated based on the mask pattern is basically consistent with the design pattern.

[0030] The OPC process for the mask pattern needs to be iterated multiple times to achieve a result where the lithographic pattern and the design pattern are basically consistent. The number of iterations directly affects the efficiency of the OPC process.

[0031] To improve OPC efficiency, this application provides an optical proximity correction method, apparatus, electronic device, and storage medium. A pre-moving distance is determined based on multiple deviation values ​​after photolithography of multiple preset patterns to adjust the size of the initial via pattern, resulting in a pre-moving via pattern. This makes the pre-moving via pattern closer to the target state after OPC correction. Optical proximity correction based on the pre-moving via pattern reduces the number of iterations required for optical proximity correction and improves the efficiency of optical proximity correction.

[0032] The following describes the specific implementation of the optical proximity correction method, apparatus, electronic device and storage medium provided in the embodiments of this application.

[0033] Figure 1 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 1 ,like Figure 1 As shown, the method may include: S101. Obtain the design layout of the via layer and multiple deviation values ​​obtained after photolithography of multiple preset patterns. The design layout includes multiple initial via patterns, and the deviation values ​​are the deviation values ​​between the preset patterns and the corresponding photolithography patterns.

[0034] In this embodiment, the design layout is the physical layout of the chip design, which may include the geometric patterns of structures such as transistors, interconnects, and vias. Vias are divided into contact holes (CT) between the active layer and the metal layer and vias between the metal layers. The geometric pattern corresponding to the via is the via pattern.

[0035] During OPC modeling, a large number of measurement dimensions of photolithographic patterns on silicon wafers are collected, and the data is then analyzed based on the measurement dimensions of each photolithographic pattern. The mask size corresponding to each photolithographic pattern. The deviation value between each preset pattern and the photolithographic pattern can be calculated. , among which, if A value greater than 0 indicates that the patterns shrank during the photolithography process due to insufficient spacing between them. A value less than 0 indicates that the patterns have expanded due to excessive spacing between them during the photolithography process. The preset patterns can be various shapes of through-hole patterns, including CT patterns and VIA patterns.

[0036] S102. Determine the pre-movement distance based on multiple deviation values.

[0037] In this embodiment, since multiple deviation values ​​are obtained by collecting a large number of deviations between photolithography patterns and mask patterns on silicon wafers, they basically cover the possible deviations of mask patterns during photolithography under various pattern sizes and pattern spacings. Therefore, calculating the pre-moving distance L based on multiple deviation values ​​to pre-move the initial via pattern can minimize the number of OPC iterations for most via patterns.

[0038] In some embodiments, the pre-movement distance L can be determined by statistically analyzing the deviation values ​​between multiple preset patterns and their corresponding photolithographic patterns to determine the mode, median, or average of the deviation values.

[0039] In other embodiments, the weight of each deviation value is determined based on the ratio of the number of identical deviation values ​​among the multiple deviation values ​​to the total number of deviation values, and the pre-movement distance is calculated based on the multiple deviation values ​​and their weights.

[0040] S103. Adjust multiple initial through-hole patterns according to the pre-moving distance to obtain multiple pre-moving through-hole patterns.

[0041] In this embodiment, based on the pre-moving distance L, multiple edges of each initial through-hole pattern are moved to adjust the size of each initial through-hole pattern, thereby obtaining each pre-moved through-hole pattern.

[0042] In some embodiments, if the pre-moving distance L is less than 0, the edge of each initial through-hole pattern is moved inward to reduce the size of each initial through-hole pattern to obtain each pre-moving through-hole pattern.

[0043] In other embodiments, if the pre-moving distance L is greater than 0, the edge of each initial through-hole pattern is moved outward to increase the size of each initial through-hole pattern in order to obtain each pre-moving through-hole pattern.

[0044] Example, Figure 2 This is a schematic diagram of the pre-movement of the through-hole pattern provided in the embodiments of this application, such as... Figure 2 As shown in the figure, the blue solid line is the initial through hole pattern. By pre-moving each edge by L, the pre-moved through hole pattern corresponding to the orange dashed line is obtained.

[0045] In another embodiment, adjusting multiple initial through-hole patterns according to a pre-moving distance may include: determining adjacent patterns corresponding to each initial through-hole pattern; determining the pattern spacing between each initial through-hole pattern and adjacent patterns; determining the adjustment direction and adjustment distance of each pattern edge of each initial through-hole pattern based on the pattern spacing and the pre-moving distance; and adjusting each initial through-hole pattern according to the adjustment direction and adjustment distance of each pattern edge.

[0046] In this embodiment, when the pre-moving distance L is greater than 0, and the spacing between the initial through-hole pattern and the adjacent pattern is small (e.g., less than a first preset multiple of the pre-moving distance), the edge of the initial through-hole pattern adjacent to the adjacent pattern is not adjusted or is adjusted away from the adjacent pattern. The other edges of the initial through-hole pattern are adjusted normally based on the pre-moving distance L. The adjustment distance of this edge can be, for example, half of the pre-moving distance.

[0047] S104. Perform optical proximity correction on multiple pre-moving through-hole patterns to obtain multiple target through-hole patterns.

[0048] In this embodiment, each pre-moving via pattern is iteratively corrected using OPC to obtain each target via pattern.

[0049] Specifically, using the pre-moving via pattern as the initial mask pattern and the target mask pattern, the edges of the initial mask pattern are segmented, and each segmented segment is moved to obtain a new mask pattern. Photolithographic simulation is performed on the new mask pattern to obtain the simulated pattern contour. The edge placement error (EPE) of the target pattern and contour is calculated. If EPE is greater than 0, it indicates that the contour exceeds the target pattern. In the next iteration, this segment of the new mask pattern needs to be moved inward by a distance of k*EPE, where k is an adjustable movement coefficient in OPC correction. If EPE is less than 0, it indicates that the contour does not exceed the target pattern. In the next iteration, this segment of the new mask pattern needs to be moved outward by a distance of k*EPE.

[0050] This process is repeated multiple times until the iteration limit is reached, or the EPE between the contour and the target pattern is less than or equal to a preset threshold, such as EPE < 2nm, to obtain the final mask pattern.

[0051] Example, Figure 3 A comparison chart of iteration count and edge placement error provided for embodiments of this application, such as... Figure 3As shown, comparing the number of iterations in which the EPE between the contour and the target pattern is less than or equal to a preset threshold when performing OPC(old) without using the pre-movement scheme provided in this embodiment and when performing OPC(new) with the pre-movement scheme provided in this embodiment, it can be seen that for via patterns with pattern sizes of 120nm, 130nm and 140nm, the number of iterations for OPC(old) is 5, 5 and 7 respectively, while the number of iterations for OPC(new) is 3, 2 and 5 respectively, which can achieve the same correction effect as OPC(old).

[0052] For example, Table 1 is a comparison table of the number of iterations provided in the embodiments of this application. As shown in Table 1, by using the scheme of this embodiment to perform pre-movement and then OPC correction, the number of iterations for OPC correction is greatly reduced.

[0053] Table 1. Comparison of Iteration Counts

[0054] The optical proximity correction method provided in the above embodiments determines a pre-moving distance based on multiple deviation values ​​after multiple preset pattern photolithography, so as to adjust the size of the initial via pattern and obtain a pre-moving via pattern, making the pre-moving via pattern closer to the target state after OPC correction. Based on the pre-moving via pattern, optical proximity correction can reduce the number of iterations of optical proximity correction of the pattern and improve the efficiency of optical proximity correction.

[0055] In one possible implementation, the process of determining the pre-movement distance based on multiple deviation values ​​in step S102 above may include: The pre-movement distance is determined based on the maximum and minimum deviation values ​​among multiple deviation values.

[0056] In this embodiment, in order to cover the photolithographic differences in via patterns of different sizes and spacings, the maximum deviation value can be determined from multiple deviation values. and minimum deviation value Based on the maximum deviation value and minimum deviation value The average value is used to determine the pre-movement distance L.

[0057] Specifically, the formula for calculating the pre-movement distance L can be expressed as:

[0058] The optical proximity correction method provided in the above embodiments calculates the pre-moving distance by using the maximum and minimum deviation values. This method can take into account the lithographic differences of via patterns with different sizes and spacings, and determine the pre-moving distance to be applicable to various pattern scenarios. This allows most pre-moving via patterns to be closer to the target state after OPC correction, reducing the number of OPC correction iterations and improving correction efficiency.

[0059] In one possible implementation, Figure 4 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 2 ,like Figure 4 As shown, before determining the pre-movement distance based on the maximum and minimum deviation values ​​among multiple deviation values, the method may further include: S201. Determine multiple anchor point graphics from multiple preset graphics. The multiple anchor point graphics have the same size and different pitches with other adjacent preset graphics.

[0060] S202. Determine the maximum and minimum deviation values ​​based on the deviation values ​​between multiple anchor point patterns and the corresponding photolithography patterns.

[0061] In this embodiment, considering that the square is the most common graphic type in the via layer layout file, multiple preset graphics are analyzed, the number of graphics corresponding to each size is counted, and the preset graphic corresponding to the size with the most graphics is determined as the anchor graphic. Based on the size of each anchor graphic and the spacing between adjacent preset graphics of each anchor graphic, the pitch of each anchor graphic is determined.

[0062] Furthermore, based on the pitch of each anchor point pattern, they are sorted in order of pitch size to form a pitch path through pitch. Based on the deviation values ​​between the anchor point patterns corresponding to various pitches on the pitch path and the corresponding lithographic patterns, the maximum and minimum deviation values ​​are determined.

[0063] In some embodiments, for each anchor point pattern having the same pitch as an adjacent preset pattern, the average value of the deviation between each anchor point pattern and the corresponding lithographic pattern can be used as the deviation value between the anchor point pattern and the lithographic pattern corresponding to that pitch.

[0064] The optical proximity correction method provided in the above embodiments selects the preset pattern with the most occurrence size as the anchor point pattern, and determines the maximum and minimum deviation values ​​based on the deviation values ​​between the anchor point pattern with different pitch from the adjacent preset pattern and the corresponding lithographic pattern. This allows the calculated pre-movement distance to cover the most via patterns, so that most of the pre-moved via patterns can get closer to the target state after OPC correction, reducing the number of OPC correction iterations and improving correction efficiency.

[0065] In one possible implementation, the process of determining the pre-movement distance based on multiple deviation values ​​in step S102 above may include: The pre-movement distance is determined based on multiple deviation values ​​and the graphic weights of multiple preset graphics.

[0066] In this embodiment, graphic weight is used to represent the proportion of each preset graphic among all preset graphics. For example, it can be the proportion of the size of each preset graphic among all preset graphics. Based on the graphic weights of multiple preset graphics, the deviation values ​​of multiple preset graphics are weighted and summed to determine the pre-moving distance L.

[0067] For example, the formula for calculating the pre-movement distance L can be expressed as:

[0068] Where N is the number of preset graphics. The weight of the nth preset graphic. This is the deviation value for the nth preset graphic.

[0069] In some embodiments, Figure 5 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 3 ,like Figure 5 As shown, before determining the pre-movement distance based on multiple deviation values ​​and the graphic weights of multiple preset graphics, the method may further include: S301. Determine the number of graphics of the same size among multiple preset graphics.

[0070] S302. Determine the graphic weight of each preset graphic based on the ratio of the number of each graphic to the total number of preset graphics.

[0071] In this embodiment, the graphic dimensions of multiple preset graphics are counted to determine the number of graphics with the same graphic size. Based on the ratio of the number of graphics corresponding to each graphic size to the total number of graphics of multiple preset graphics, the graphic weight of the preset graphics corresponding to each graphic size is determined.

[0072] The optical proximity correction method provided in the above embodiments assigns different weights to different preset patterns, which can highlight the influence of deviations in important patterns, make the determination of the pre-movement distance more targeted, better meet the needs of actual via layer design layout, and comprehensively consider the deviation and importance of different preset patterns, which helps to make the pre-moved via pattern closer to the target state after OPC correction and improve OPC correction efficiency.

[0073] In one possible implementation, Figure 6 A flowchart illustrating the optical proximity correction method provided in the embodiments of this application. Figure 4 ,like Figure 6 As shown, the process of determining the pre-movement distance based on multiple deviation values ​​in S102 above may include: S401. Create a lookup table based on the dimensions, spacing, and multiple deviation values ​​of multiple preset graphics.

[0074] S402. Based on the size and spacing of each initial through-hole pattern, determine the pre-movement distance of each initial through-hole pattern by looking up a lookup table.

[0075] In this embodiment, a lookup table is established to map the relationships between multiple sizes, multiple spacings and multiple deviation values ​​based on the size, spacing and multiple deviation values ​​of multiple preset graphics. If there are multiple different deviation values ​​for the same size and the same spacing, the average value of the multiple different deviation values ​​is used as the deviation value corresponding to the size and spacing.

[0076] For each initial via pattern in the via layer design layout, the deviation value corresponding to the size and spacing of each initial via pattern is found from the lookup table and used as the pre-movement distance L for each initial via pattern.

[0077] In some embodiments, the process of determining the pre-moving distance of each initial through-hole pattern by looking up a lookup table based on the size and spacing of each initial through-hole pattern may include: Based on the size and spacing of each initial through-hole pattern, a lookup table is used to determine multiple initial deviation values ​​that are closest to the size and spacing of each initial through-hole pattern; interpolation is performed on the multiple initial deviation values ​​to determine the pre-movement distance of each initial through-hole pattern.

[0078] In this embodiment, if the size and / or spacing of each initial through-hole pattern cannot be uniquely matched in the lookup table, the closest adjacent size and / or adjacent spacing is determined by searching the lookup table. Based on the multiple initial deviation values ​​corresponding to the closest adjacent size and / or adjacent spacing, the pre-moving distance L of each initial through-hole pattern is determined by interpolation calculation.

[0079] In some embodiments, the interpolation weight of each initial deviation value can be calculated based on the difference between the size and / or spacing of each initial via pattern and the nearest adjacent size and / or adjacent spacing.

[0080] For example, if each initial through-hole pattern finds a unique corresponding size in the lookup table but not a unique corresponding spacing, then based on the spacing of each initial through-hole pattern, the two closest adjacent spacings are determined from the multiple spacings corresponding to the unique corresponding size in the lookup table. Based on the difference between the spacing of each initial through-hole pattern and the two closest adjacent spacings, the initial deviation values ​​corresponding to the two closest adjacent spacings are weighted to determine the pre-movement distance L.

[0081] If no unique corresponding size is found for each initial through-hole pattern in the lookup table, then the two closest adjacent sizes are determined from the lookup table based on the size of each initial through-hole pattern. Based on the spacing of each initial through-hole pattern, the two closest adjacent spacings are found from the spacings corresponding to the two closest adjacent sizes. Based on the difference between the spacing of each initial through-hole pattern and the two closest adjacent spacings, the initial deviation values ​​corresponding to the two closest adjacent spacings are weighted to determine the pre-movement distance L.

[0082] The optical proximity correction method provided in the above embodiments calculates the pre-moving distance based on the deviation value that best matches the size and spacing of each initial via pattern by looking up a lookup table. This can minimize the number of OPC iterations for each initial via pattern and improve the OPC correction efficiency of each initial via pattern.

[0083] Example, Figure 7 Comparative schematic diagrams provided for embodiments of this application, such as Figure 7 As shown in (a), without the scheme of the embodiment of this application, each via pattern needs to move from the target layer and reach the final mask layer after multiple iterations, as shown in (a). Figure 7 As shown in (b) of this application, the via pattern is pre-moved first, and the pre-moved via pattern is used as the initial mask pattern (orange dashed line in the figure) to start OPC iteration, which omits the number of iterations from the target layer to the pre-moved via pattern, saving a lot of OPC running time.

[0084] Figure 8 The test result comparison chart provided for the embodiments of this application is as follows: Figure 8 As shown, 20 Via layers of different sizes were randomly selected for testing. The runtime of the entire OPC process was tested using both the traditional method (old - orange in the figure) and the method of this application embodiment (new - blue in the figure). As can be seen from the figure, the method of this application embodiment significantly reduces the number of OPC iterations, lowering the runtime of OPC correction by 15%-35%, greatly improving OPC correction efficiency and helping to shorten the project development cycle.

[0085] Based on the above method embodiments, this application also provides an optical proximity correction device. Figure 9 This is a schematic diagram of the optical proximity correction device provided in the embodiments of this application, as shown below. Figure 9 As shown, the device may include: The information acquisition module 501 is used to acquire the design layout of the via layer and multiple deviation values ​​obtained after photolithography of multiple preset patterns. The design layout includes multiple initial via patterns, and the deviation values ​​are the deviation values ​​between the preset patterns and the corresponding photolithography patterns. The pre-movement distance acquisition module 502 is used to determine the pre-movement distance based on multiple deviation values; The graphic adjustment module 503 is used to adjust multiple initial through-hole graphics according to the pre-moving distance to obtain multiple pre-moving through-hole graphics; The pattern correction module 504 is used to perform optical proximity correction on multiple pre-moving through-hole patterns to obtain multiple target through-hole patterns.

[0086] Optionally, the pre-movement distance acquisition module 502 is specifically used to determine the pre-movement distance based on the maximum and minimum deviation values ​​among multiple deviation values.

[0087] Optionally, the pre-movement distance acquisition module 502 is further configured to determine multiple anchor point patterns from multiple preset patterns, wherein the multiple anchor point patterns have the same size but different pitches with other adjacent preset patterns; and to determine the maximum deviation value and the minimum deviation value based on the deviation values ​​between the multiple anchor point patterns and the corresponding photolithography patterns.

[0088] Optionally, the pre-movement distance acquisition module 502 is specifically used to determine the pre-movement distance based on multiple deviation values ​​and the graphic weights of multiple preset graphics.

[0089] Optionally, the pre-movement distance acquisition module 502 is further configured to determine the number of graphics of the same size among the multiple preset graphics; and to determine the graphic weight of each preset graphic based on the ratio of the number of each graphic to the total number of graphics of the preset graphics.

[0090] Optionally, the pre-moving distance acquisition module 502 is specifically used to establish a lookup table based on the size, spacing and multiple deviation values ​​of multiple preset graphics; and to determine the pre-moving distance of each initial through-hole graphic by looking up the lookup table based on the size and spacing of each initial through-hole graphic.

[0091] Optionally, the pre-movement distance acquisition module 502 is further configured to, based on the size and spacing of each initial through-hole pattern, find and determine multiple initial deviation values ​​that are closest to the size and spacing of each initial through-hole pattern through a lookup table; and perform interpolation processing on the multiple initial deviation values ​​to determine the pre-movement distance of each initial through-hole pattern.

[0092] The above-described device is used to execute the method provided in the foregoing embodiments, and its implementation principle and technical effect are similar, so they will not be described again here.

[0093] These modules can be one or more integrated circuits configured to implement the above methods, such as one or more Application Specific Integrated Circuits (ASICs), one or more microprocessors, or one or more Field Programmable Gate Arrays (FPGAs). Alternatively, when a module is implemented using processing element scheduler code, the processing element can be a general-purpose processor, such as a Central Processing Unit (CPU) or other processor capable of calling program code. Furthermore, these modules can be integrated together as a system-on-a-chip (SOC).

[0094] Figure 10 A schematic diagram of the electronic device provided in the embodiments of this application, such as... Figure 10 As shown, the electronic device 600 may include a processor 601, a storage medium 602, and a bus. The storage medium 602 stores program instructions executable by the processor 601. When the electronic device 600 is running, the processor 601 communicates with the storage medium 602 via the bus, and the processor 601 executes the program instructions to perform the above-described method embodiment. The specific implementation and technical effects are similar and will not be described in detail here.

[0095] Optionally, this application also provides a computer-readable storage medium storing a computer program, which is executed by a processor to perform the above-described method embodiments.

[0096] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0097] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0098] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or in a combination of hardware and software functional units.

[0099] The integrated units implemented as software functional units described above can be stored in a computer-readable storage medium. These software functional units, stored in a storage medium, include several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute some steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0100] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An optical proximity correction method, characterized in that, The method includes: The design layout of the via layer and multiple deviation values ​​obtained after photolithography of multiple preset patterns are obtained. The design layout includes multiple initial via patterns, and the deviation values ​​are the deviation values ​​between the preset patterns and the corresponding photolithographic patterns. The pre-movement distance is determined based on the multiple deviation values; Based on the pre-moving distance, adjust the multiple initial through-hole patterns to obtain multiple pre-moving through-hole patterns; Optical proximity correction is performed on multiple pre-moving through-hole patterns to obtain multiple target through-hole patterns.

2. The method as described in claim 1, characterized in that, The step of determining the pre-movement distance based on multiple deviation values ​​includes: The pre-movement distance is determined based on the maximum and minimum deviation values ​​among the multiple deviation values.

3. The method as described in claim 2, characterized in that, Before determining the pre-movement distance based on the maximum and minimum deviation values ​​among the plurality of deviation values, the method further includes: Multiple anchor point graphics are determined from a plurality of preset graphics, wherein the multiple anchor point graphics have the same size but different pitches with other adjacent preset graphics; The maximum and minimum deviation values ​​are determined based on the deviation values ​​between the multiple anchor point patterns and the corresponding photolithographic patterns.

4. The method as described in claim 1, characterized in that, The step of determining the pre-movement distance based on multiple deviation values ​​includes: The pre-movement distance is determined based on the multiple deviation values ​​and the graphic weights of the multiple preset graphics.

5. The method as described in claim 4, characterized in that, Before determining the pre-movement distance based on the multiple deviation values ​​and the graphic weights of the multiple preset graphics, the method further includes: Determine the number of graphics of the same size among the multiple preset graphics; The graphic weight of each preset graphic is determined based on the ratio of the number of each graphic to the total number of preset graphics.

6. The method as described in claim 1, characterized in that, The step of determining the pre-movement distance based on multiple deviation values ​​includes: A lookup table is established based on the size, spacing, and deviation values ​​of the preset graphics; Based on the size and spacing of each initial through-hole pattern, the pre-movement distance of each initial through-hole pattern is determined by looking up the lookup table.

7. The method as described in claim 6, characterized in that, The step of determining the pre-moving distance of each initial through-hole pattern by looking up a lookup table based on the size and spacing of each initial through-hole pattern includes: Based on the size and spacing of each of the initial through-hole patterns, a plurality of initial deviation values ​​that are closest to the size and spacing of each of the initial through-hole patterns are determined by searching the lookup table; Interpolation is performed on the multiple initial deviation values ​​to determine the pre-movement distance of each initial through-hole pattern.

8. An optical proximity correction device, characterized in that, The device includes: The information acquisition module is used to acquire the design layout of the via layer and multiple deviation values ​​obtained after photolithography of multiple preset patterns. The design layout includes multiple initial via patterns, and the deviation values ​​are the deviation values ​​between the preset patterns and the corresponding photolithographic patterns. A pre-movement distance acquisition module is used to determine the pre-movement distance based on multiple deviation values; The pattern adjustment module is used to adjust multiple initial through-hole patterns according to the pre-moving distance to obtain multiple pre-moving through-hole patterns; The pattern correction module is used to perform optical proximity correction on multiple pre-moving through-hole patterns to obtain multiple target through-hole patterns.

9. An electronic device, characterized in that, include: The device includes a processor, a storage medium, and a bus, wherein the storage medium stores program instructions executable by the processor, and when the electronic device is running, the processor communicates with the storage medium via the bus, and the processor executes the program instructions to perform the steps of the optical proximity correction method as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The storage medium stores a computer program, which, when executed by a processor, performs the steps of the optical proximity correction method as described in any one of claims 1 to 7.

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