Sensor for measuring various gases and preparation method thereof

Abstract

The invention discloses a sensor for measuring various gases and a preparation method thereof, and the sensor comprises a main controller, a substrate, a silicon dioxide film layer arranged on the substrate, and a plurality of gas-sensitive sensing assemblies arranged on the silicon dioxide film layer in an array. Each gas-sensitive sensing assembly in the plurality of gas-sensitive sensing assemblies correspondingly detects at least one preset type of gas; wherein each gas-sensitive sensing assembly comprises a heating layer, and the heating layer is used for locally heating the gas-sensitive sensing assembly under the control of the main controller, so that the gas-sensitive sensing assembly works within a preset temperature; the electrode layer is used for transmitting induced current to the main controller; the induction layer is arranged on the electrode layer and is used for generating the induction current according to the gas; and the water vapor suppression layer is arranged on the induction layer and is used for enabling water vapor to be separated from the induction layer so as to increase the contact area between the induction layer and air. Therefore, various special gases can be accurately monitored.

Description

Technical Field

[0001] This application relates to the field of sensor material preparation technology, and in particular to a sensor for measuring multiple gases and its preparation method. Background Technology

[0002] In the field of volatile organic compound (VOC) pollution control and air quality monitoring, metal oxide semiconductor (MOS) gas sensors are widely used in environmental monitoring and industrial safety scenarios due to their advantages such as good stability, low cost, and high sensitivity. However, existing MOS gas sensors generally adopt a single-layer gas-sensitive film structure, and a single sensor can only detect a single gas component. This results in poor selectivity and the inability to detect a single type of gas, making it difficult to meet the needs of simultaneous monitoring of multiple organic compound gases or mixed harmful gases in complex environments. This restricts their application expansion in scenarios such as precise indoor air quality control and industrial multi-component exhaust gas investigation.

[0003] Therefore, how to achieve selective detection of multiple gases by metal oxide semiconductor gas sensors and improve their detection accuracy is an urgent problem to be solved. Summary of the Invention

[0004] This application provides a sensor for measuring multiple gases and a method for preparing the same, which solves the problems that most existing semiconductor gas sensors can only detect a single gas component and have insufficient detection accuracy.

[0005] To achieve the objectives of this application, the following technical solution is provided: In a first aspect, embodiments of this application provide a sensor for measuring multiple gases. The sensor includes a main controller, a substrate, a silicon dioxide film layer disposed on the substrate, and a plurality of gas-sensitive sensing components arranged in an array on the silicon dioxide film layer. Each of the plurality of gas-sensitive sensing components is configured to detect at least one preset type of gas. Each gas-sensitive sensing component includes: A heating layer, comprising a first metal film, a second metal film, and a heating layer disposed between the first metal film and the second metal film, wherein the heating layer is electrically connected to a first wire; the heating layer is used to locally heat the gas-sensitive sensing component under the control of the main controller, so that the gas-sensitive sensing component operates within a preset temperature range. An electrode layer comprising cross-arranged metal electrodes and a second wire connected to the metal electrodes; the second wire being electrically connected to the main controller; the electrode layer being used to transmit induced current to the main controller; A sensing layer is disposed on the electrode layer, the sensing layer comprising a metal oxide semiconductor film; the sensing layer is electrically connected to the positive and negative electrodes of the electrode layer; the metal oxide semiconductor film is used to generate the induced current according to the gas; A water vapor suppression layer is disposed on the sensing layer and is distributed in a columnar, bundled, or mesh-like protrusion structure to dissipate water vapor from the sensing layer, thereby increasing the contact area between the sensing layer and the air.

[0006] In some embodiments, the plurality of gas-sensitive sensing components are arrayed in an m-row, n-column matrix structure; where m and n are both positive integers greater than or equal to 2. Among them, at least two target gas sensing components for detecting the same type of target gas have the same sensing layer and are respectively arranged in symmetrical or diagonally distributed positions in the matrix structure for detecting the same target gas. The target gas sensing component is connected to the main controller through a corresponding electrode layer to detect the target gas; the target gas is any type of gas in the air.

[0007] In some embodiments, the main controller is configured to determine multiple gas concentrations based on the gas to be measured using the plurality of gas-sensitive sensing components, including: Obtain the temperature and humidity parameters of the sensor within a preset time period; Multiple induced currents are generated through the multiple gas-sensitive sensing components; Based on a preset relationship between the induced current and the gas concentration, the gas concentration corresponding to the multiple induced currents is determined, and multiple first gas concentrations are obtained. The gas concentration calculation algorithm corresponding to the temperature and humidity parameters is searched in the preset information database, and the gas concentration corresponding to the multiple induced currents is determined based on the gas concentration calculation algorithm to obtain multiple second gas concentrations; each gas concentration in the multiple first gas concentrations corresponds one-to-one with each gas concentration in the multiple second gas concentrations; Determine the differences between the plurality of first gas concentrations and the plurality of second gas concentrations to obtain a plurality of differences; When the target difference is less than or equal to a preset first threshold, the first gas concentration corresponding to the target difference is determined from the plurality of first gas concentrations; the target difference is any one of the plurality of differences. Determine the gas type corresponding to the first gas concentration to obtain the first gas type; The gas concentration corresponding to the first gas type is selected from the plurality of first gas concentrations to obtain the second gas concentration; The target gas concentration is determined based on the first gas concentration and the second gas concentration.

[0008] In some embodiments, the first metal film and the second metal film are respectively attached to the first end face and the second end face of the heating layer, so that the first metal film, the heating layer and the second metal film constitute a sandwich structure; the first end face and the second end face are disposed opposite to each other.

[0009] In some embodiments, the material of the heating layer is at least one of nickel-chromium alloy, platinum alloy, tungsten alloy, and polycrystalline silicon; the materials of the first metal film and the second metal film are molybdenum.

[0010] In some embodiments, the metal electrode of the electrode layer includes a positive electrode and a negative electrode. The positive electrode includes a plurality of first electrode arms disposed along a first direction. The negative electrode includes a plurality of second electrode arms extending along a second direction. The first direction and the second direction are intersecting each other in a planar projection. The plurality of first electrode arms and the plurality of second electrode arms are arranged in a cross arrangement. The cross arrangement includes at least one of parallel cross arrangement, curved cross arrangement, and spiral cross arrangement.

[0011] In some embodiments, when the positive electrode and the negative electrode are arranged in a parallel and intersecting manner, the first direction is perpendicular to the second direction; the plurality of first electrode arms and the plurality of second electrode arms are arranged in a parallel and staggered manner. When the positive electrode and the negative electrode are arranged in the curve cross arrangement, the plurality of first electrode arms and the plurality of second electrode arms are distributed in a concentric arc staggered distribution; When the positive electrode and the negative electrode are arranged in a loop-shaped cross pattern, the plurality of first electrode arms and the plurality of second electrode arms are loop-shaped extensions of a preset length and are staggered.

[0012] In some embodiments, each gas-sensitive sensing component further includes an insulating layer; the insulating layer is attached between the heating layer and the electrode layer, the insulating layer is made of silicon dioxide, and the insulating layer is used to isolate the heating layer from contact with air to prevent oxidation of the heating layer; and to achieve electrical insulation between the electrode layer and the heating layer.

[0013] In some embodiments, the material of the sensing layer includes an oxide material and a doped material; the oxide material is at least one of the following oxides: tin dioxide, zinc oxide, iron oxide, tungsten trioxide, and indium trioxide; the oxide material is used to sense gases in the air to generate the induced current; The doping material includes at least one of the following: gold, silver, platinum, aluminum, gallium, zirconium, and palladium; the doping material is used to enhance the gas sensing intensity of the oxide material.

[0014] Secondly, embodiments of this application provide a method for fabricating a sensor for measuring multiple gases, applied to a coating equipment, the coating equipment including an etching apparatus, an evaporation deposition apparatus, and a sputtering apparatus, the method comprising: A mesoporous silica film is obtained by depositing a silica film on a substrate using the evaporation deposition apparatus based on a preset first parameter. A heating layer is deposited on the mesoporous silica film to obtain a heating layer film; the heating layer film comprises a sandwich structure consisting of metallic molybdenum, a heating alloy, and metallic molybdenum. The heating layer is etched by the etching device to etch the heating layer into multiple independent first regions; A dense silica layer is obtained by depositing a silica layer onto the target area using the evaporation deposition apparatus; the target area is any one of the plurality of first areas; A target electrode layer is obtained by depositing a first metal onto the target dense silicon dioxide layer using the sputtering device. The gas-sensitive oxide material is deposited on the target electrode layer using the sputtering device to obtain the target sensing layer; After obtaining the target sensing layer, N sensing layers are sequentially formed in multiple second regions, wherein the materials of the N sensing layers are metal oxide materials with different doping methods; the multiple second regions are multiple first regions other than the target region; N is a positive integer greater than 1; An inhibition layer is deposited on the N sensing layers to obtain multiple independent sensor array units; the inhibition layer has hydrophobic and oil-resistant properties to reduce the impact of the external environment on the sensor detection accuracy.

[0015] Thirdly, embodiments of this application provide a multi-gas measurement sensor device, which executes instructions from the steps of any method in the second aspect of this application to prepare a multi-gas measurement sensor as described in any of the first aspects of this application.

[0016] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program for electronic data interchange, wherein the computer program causes a computer to perform some or all of the steps described in any method of the second aspect of this application.

[0017] Fifthly, embodiments of this application provide a computer program product, wherein the computer program product includes a non-transitory computer-readable storage medium storing a computer program operable to cause a computer to perform some or all of the steps described in any method of the second aspect of this application. The computer program product may be a software installation package.

[0018] This application describes a sensor for measuring multiple gases and its fabrication method. The sensor includes a main controller, a substrate, a silicon dioxide film layer disposed on the substrate, and a plurality of gas-sensitive sensing components arranged in an array on the silicon dioxide film layer. Each of the plurality of gas-sensitive sensing components corresponds to detecting at least one preset type of gas. Each gas-sensitive sensing component includes a heating layer comprising a first metal film, a second metal film, and a heating layer disposed between the first metal film and the second metal film. The heating layer is electrically connected to a first wire. The heating layer is used to locally heat the gas-sensitive sensing component under the control of the main controller. The system is heated to ensure the gas-sensitive sensing components operate within a preset temperature range. An electrode layer, comprising cross-arranged metal electrodes and a second wire connected to the metal electrodes and electrically connected to the main controller, transmits induced current to the main controller. A sensing layer, disposed on the electrode layer, includes a metal oxide semiconductor film. The sensing layer is electrically connected to the positive and negative electrodes of the electrode layer, and the metal oxide semiconductor film generates the induced current based on the gas. A moisture suppression layer, disposed on the sensing layer, is distributed in a columnar, bundled, or mesh-like protrusion structure to deflect moisture away from the sensing layer, thereby increasing the contact area between the sensing layer and the air. Thus, on the one hand, multiple gas-sensitive sensing components can simultaneously measure and detect various organic compound pollutants on the same sensor; on the other hand, the heating layer effectively reduces the impact of environmental factors on the gas-sensitive sensing components, thereby improving detection accuracy. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the structure of a sensor for measuring multiple gases provided in an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a sensor for measuring a single gas provided in an embodiment of this application; Figure 3 This is a schematic diagram of the layout of multiple gas-sensitive sensing components provided in an embodiment of this application; Figure 4 This is a schematic diagram of the layout of a single sensor provided in an embodiment of this application; Figure 5 This is a schematic flowchart of a detection algorithm for a sensor that measures multiple gases, provided in an embodiment of this application. Figure 6 This is a schematic diagram of an electrode layer structure with electrode intersections provided in an embodiment of this application; Figure 7 This is a schematic flowchart illustrating a method for preparing a sensor for measuring multiple gases according to an embodiment of this application. Figure 8 This is a process flow diagram of a method for preparing a sensor for measuring multiple gases provided in an embodiment of this application; Figure 9 This is a schematic diagram of the structure of a multi-gas sensor device provided in an embodiment of this application. Detailed Implementation

[0021] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0022] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0023] It should be understood that the term "and / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this document indicates that the preceding and following related objects are in an "or" relationship. In the embodiments of this application, "multiple" refers to two or more.

[0024] In the embodiments of this application, "at least one item" or its similar expression refers to any combination of these items, including any combination of a single item or a plurality of items. "One or more" means one or more, while "multiple" means two or more. For example, "at least one item" of a, b, or c can represent the following seven cases: a, b, c; a and b; a and c; b and c; a, b, and c. Each of a, b, and c can be an element or a set containing one or more elements.

[0025] In this application, the term "connection" refers to various connection methods, such as direct connection or indirect connection, to achieve communication between devices. This application does not impose any limitations on this.

[0026] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0027] The following is an explanation of the relevant terms used in this application: Physical vapor deposition (PVD) is a technique that uses physical methods under vacuum conditions to vaporize the surface of a solid or liquid material into gaseous atoms, molecules, or partially ionized ions, and then deposits a thin film with specific functions onto the substrate surface through a low-pressure gas (or plasma) process. PVD technology can deposit metal films, alloy films, compound films, ceramics, semiconductors, and polymer films.

[0028] Metal-Oxide-Semiconductor (MOS): Metal-oxide-semiconductor is a metal oxide material with semiconductor properties. Its electrical properties change after the gas is adsorbed on its surface, which is used to realize the response and detection of specific gases.

[0029] The following is combined with Figure 1 A cross-sectional structural diagram of a sensor for measuring multiple gases according to an embodiment of this application is provided for illustration. Figure 1 This is a schematic diagram of the structure of a sensor for measuring multiple gases provided in an embodiment of this application, as shown below. Figure 1As shown, the sensor 100 for measuring multiple gases includes a main controller, a substrate 110, a silicon dioxide film layer 120 disposed on the substrate, and a plurality of gas-sensitive sensing components arranged in an array on the silicon dioxide film layer 120, wherein each of the plurality of gas-sensitive sensing components is corresponding to detect at least one preset type of gas. Each gas-sensitive sensing component 130 includes: The heating layer 132 includes a first metal film, a second metal film, and a heating layer disposed between the first metal film and the second metal film. The heating layer is electrically connected to a first wire. The heating layer is used to locally heat the gas-sensitive sensing component under the control of the main controller so that the gas-sensitive sensing component operates within a preset temperature range. Electrode layer 131, the electrode layer includes cross-arranged metal electrodes and a second wire connected to the metal electrodes; the second wire is electrically connected to the main controller; the electrode layer is used to transmit induced current to the main controller; A sensing layer 133 is disposed on the electrode layer, the sensing layer comprising a metal oxide semiconductor film; the sensing layer is electrically connected to the positive and negative electrodes of the electrode layer; the metal oxide semiconductor film is used to generate the induced current according to the gas; A water vapor suppression layer 134 is disposed on the sensing layer and is distributed in a columnar, bundled, or mesh-like protrusion structure to dissipate water vapor from the sensing layer, thereby increasing the contact area between the sensing layer and the air.

[0030] The substrate 110 serves as the basic support structure for the sensor, providing mechanical support and a technological foundation for the upper functional film structures. The substrate 110 can be a glass substrate, ceramic substrate, or other substrates that meet temperature resistance and insulation requirements to adapt to the thermal environment of subsequent thin-film fabrication processes and gas detection. A silicon dioxide film layer 120 is disposed on the substrate 110, preferably a mesoporous silicon dioxide film layer. This mesoporous silicon dioxide film layer 120 can form a stable bond with the substrate 110 at a microscale, thereby significantly improving the adhesion of the upper film structures and preventing film peeling under temperature changes or long-term operating conditions. Simultaneously, the micropores formed in the mesoporous structure provide thermal insulation, effectively reducing the conduction of heat generated by the heating layer 132 towards the substrate 110. By providing a mesoporous silicon dioxide film layer 120 between the substrate 110 and the gas-sensitive sensing component 130, the overall structural reliability is improved, and it also helps to reduce device power consumption and improve heating efficiency.

[0031] Specifically, the gas-sensitive sensing component 130 is disposed on the silicon dioxide film layer 120. Each gas-sensitive sensing component 130 includes a heating layer 132, an electrode layer 131, a sensing layer 133, and a moisture suppression layer 134, and the layers are stacked sequentially along a direction perpendicular to the substrate 110. The heating layer 132 is located at the bottom of the gas-sensitive sensing component 130 and is used to provide a stable operating temperature environment for the sensing layer 133. Specifically, the heating layer 132 includes a first metal film, a second metal film, and a heating layer disposed between the first and second metal films, forming a sandwich structure. The heating layer is electrically connected to the main controller via a first wire. Under the control of the main controller, it is energized and heats up to locally heat the corresponding gas-sensitive sensing component 130, enabling the sensing layer 133 to operate stably within a preset temperature range. By adopting a sandwich structure for the heating layer 132, on the one hand, uniform heating and temperature stability are ensured; on the other hand, the coating effect of the upper and lower metal films improves the oxidation resistance and long-term structural stability of the heating layer 132. An electrode layer 131 is disposed on the heating layer 132. The electrode layer 131 is electrically isolated from the heating layer 132 by an insulating structure. The electrode layer 131 includes multiple metal electrodes arranged in a cross-shaped manner, and a second wire connected to the metal electrodes. The second wire is further electrically connected to the main controller for transmitting the induced current generated by the sensing layer 133 to the main controller for processing. The metal electrodes adopt a cross-shaped arrangement structure, which allows the sensing layer 133 to form multiple points of contact with the positive and negative electrodes when deposited on it, thereby shortening the transmission path of electrons inside the sensing layer 133, reducing signal attenuation, and improving the ability to acquire changes in weak electrical signals. The cross-arranged electrode layer 131 structure is beneficial for improving the sensitivity and stability of gas detection, especially suitable for detecting low-concentration gases. Simultaneously, a dense SiO2 film is placed between the electrode layer 131 and the heating layer 132. This SiO2 film effectively protects the "sandwich" heating layer structure from oxidation, extending the product's lifespan. Furthermore, SiO2, as a dense and stable inorganic material, has excellent insulating properties. The heating layer 132 generates heat to raise the structure's temperature, achieving high gas selectivity for the MOS sensor through temperature modulation. Temperature changes affect the adsorption of oxygen on the surface of the gas-sensitive material. Moreover, as the temperature rises, the heating energy causes oxygen molecules to adsorb onto the interface. This oxygen adsorption process leads to a decrease in resistance as electrons are adsorbed within the material. Therefore, the resistance of the sensing material tends to decrease as the temperature rises; conversely, as the temperature decreases, it cannot provide sufficient energy for oxygen adsorption, causing the resistance of the sensing material to increase. Therefore, the MOS sensor requires a continuously constant temperature to ensure stable and reliable operation. The sensing layer 133 is disposed on the electrode layer 131. The sensing layer 133 includes a metal oxide semiconductor film and is electrically connected to the positive and negative electrodes of the electrode layer 131.When the gas to be detected comes into contact with the sensing layer 133, adsorption and charge transfer processes occur on the surface of the metal oxide semiconductor film, thereby causing a change in the induced current. In different gas-sensitive sensing components 130, the sensing layer 133 can be made of metal oxide semiconductor materials with different compositions and / or doping methods, so that different gas-sensitive sensing components 130 in the array correspond to the detection requirements of different types of gases, thereby realizing the composite detection of multiple gases by a single device. In this way, by integrating multiple different sensing layer 133 materials in the sensor 100 that measures multiple gases, the technical limitation of traditional MOS gas sensors that can only detect a single gas component is overcome. A water vapor suppression layer 134 is disposed above the sensing layer 133. The water vapor suppression layer 134 is distributed in the form of columnar, bundled, or mesh-like protruding microstructures. The water vapor suppression layer 134 utilizes the surface tension effect of water to make it difficult for water vapor to directly contact the sensing layer 133, while not affecting the diffusion and adsorption of gas molecules. Thus, the moisture suppression layer 134 effectively reduces the interference of moisture on the sensing layer 133, avoiding problems such as hydroxyl poisoning, thereby significantly improving the detection accuracy and long-term stability of the multi-gas sensor 100 in high-humidity environments. Furthermore, to measure multiple gases, the multi-gas sensor 100 is equipped with sensing membranes 1, 2, M+3, and M+4, each made of a material that can be the same or different. Therefore, with this configuration, the multi-gas sensor 100 can measure the composition of multiple gases.

[0032] For easier understanding, please refer to Figure 2 , Figure 2 This is a schematic diagram of the structure of a sensor for measuring a single gas according to an embodiment of this application, as shown below. Figure 2 As shown, the sensor for measuring a single gas uses a substrate (i.e., substrate 110) as the basic support unit. From bottom to top, a mesoporous SiO2 layer, a heating layer 132, an electrode layer 131, and a sensing layer 133 are stacked sequentially. The surface of the sensing layer 133 and part of the electrode layer 131 is covered with a dense SiO2 layer. Meanwhile, the electrode lines extend from the electrode layer 131 to the outside of the structure to realize the electrical connection between the sensor and the external main controller.

[0033] The substrate provides a stable physical support interface; the mesoporous SiO2 layer is a functional transition layer connecting the substrate and the heating layer 132, providing thermal insulation and enhanced film bonding; the heating layer 132 is the core unit for temperature control of the sensor, providing a preset operating temperature for the sensing layer 133; the electrode layer 131 is an electrical signal transmission unit, used for the acquisition and conduction of electrical signals from the sensing layer; the sensing layer 133 is a gas-sensitive detection unit, generating a response electrical signal through interaction with the target gas; the dense SiO2 layer is an insulation and protection unit, used to isolate external interference and protect the internal functional layers; and the electrode wires are the interface between the sensor and the external circuitry, enabling the input and output of electrical signals.

[0034] Specifically, the substrate can be made of materials such as glass, quartz, ceramic, or polymers (e.g., PMMA, PET). After cleaning and roughening pretreatment, the adhesion strength to the upper mesoporous SiO2 layer can be significantly improved. The mesoporous SiO2 layer is prepared using physical vapor deposition (PVD). Its porous structure reduces heat conduction from the heating layer 132 to the substrate, lowering energy loss, and also increases the contact area with the heating layer 132, strengthening the bonding force between the film layers. The heating layer 132 has a sandwich structure, consisting of a first metal film, a heating layer, and a second metal film stacked sequentially. The heating layer is made of... The materials can be selected from nickel-chromium alloy, platinum alloy, tungsten alloy, or polycrystalline silicon. Both the first and second metal films are made of molybdenum (Mo), and the heating layer 132 is also covered with a dense SiO2 insulating layer to prevent oxidation of the heating layer and achieve electrical isolation. The electrode layer 131 includes multiple metal electrodes arranged in a cross pattern. Its structure adopts a sandwich configuration of Mo / CuNi alloy / Mo, with a thickness of about 3500 nm and a sheet resistance of less than 0.5 Ω. It can form a low-resistance ohmic contact with the heating layer 132 to ensure the stability of electrical signal transmission. The sensing layer 133 is a metal oxide semiconductor film layer, which can be doped with Au, Ag, or Pt. Noble metals are used to enhance gas sensitivity. They are directly electrically connected to the positive and negative electrodes of the electrode layer 131 and serve as the functional layer for generating gas response electrical signals. A dense SiO2 layer covers the surface of the sensing layer 133 and part of the electrode layer 131. Its dense structure can isolate external impurities from contaminating the sensing layer 133 and prevent short circuits between the electrode layer 131 and other structural units. The electrode wires are electrically connected to the metal electrodes of the electrode layer 131, which can transmit the induced current generated by the sensing layer 133 to the external main controller and can also receive the voltage signal input by the main controller to drive the heating layer 132 to heat up.

[0035] It is evident that by stacking multiple functional units, temperature control, signal transmission, gas sensitivity detection, and structural protection are integrated into a single system. The synergistic effect of each layer not only ensures the sensor's sensitivity and response speed for detecting a single gas, but also improves its operational stability and service life.

[0036] Please see Figure 3 , Figure 3 This is a schematic diagram of the layout of multiple gas-sensitive sensing components provided in an embodiment of this application, such as... Figure 3 As shown, the plurality of gas-sensitive sensing components are arrayed in an m-row, n-column matrix structure; m and n are both positive integers greater than or equal to 2. Among them, at least two target gas sensing components for detecting the same type of target gas have the same sensing layer and are respectively arranged in symmetrical or diagonally distributed positions in the matrix structure for detecting the same target gas. The target gas sensing component is connected to the main controller through a corresponding electrode layer to detect the target gas; the target gas is any type of gas in the air.

[0037] The matrix layout of multiple gas-sensitive sensing components adopts a modular splicing architecture. The overall layout consists of four identical individual gas-sensitive sensing components joined together via splicing seams. These seams physically separate and electrically independent the individual gas-sensitive sensing components. Each gas-sensitive sensing component has pins on its edge area, serving as electrical interfaces, including heating power supply interfaces and signal acquisition interfaces. These interfaces respectively establish power supply paths between the main controller and the heating layer of the gas-sensitive sensing component, and signal transmission paths between the electrode layer and the main controller. The multiple gas-sensitive sensing components are arranged in an m x n matrix (preferably, m and n are both 2), covering the detection requirements of at least four target gases. This configuration allows for the mass production of sub-sensing units through standardized processes, reducing production complexity; and it also allows for flexible expansion of the gas detection types of the sensor by adjusting the number of spliced ​​sub-sensing units, providing excellent scalability.

[0038] Specifically, the distribution of target gas-sensitive components used to detect the same target gas must meet the requirements of spatial redundancy and error verification. Within the p-row, q-column matrix of a single gas-sensitive component, these target gas-sensitive components are centrally symmetrically distributed with the geometric center of the matrix as the symmetry point, or distributed along the main diagonal / secondary diagonal of the matrix. In the global layout across gas-sensitive components, they are distributed in the corresponding areas of different sub-sensing units with the intersection of the central splicing seam of the entire splicing structure as the symmetry center. Taking the detection of target gas H2 as an example, the corresponding target gas-sensitive sensing component (with a Pd-doped SnO2 film as the sensing layer) is located at positions (2,2) and (5,5) on the matrix (distributed along the main diagonal) within a certain sub-sensing unit. Simultaneously, within the diagonal sub-sensing units, it is located at symmetrical positions (2,2) and (5,5). This is because the detection performance of the gas-sensitive sensing component is easily affected by process fluctuations such as film deposition uniformity and electrode contact resistance. By setting similar components in spatially symmetrical positions, interference from local process defects on the detection results of a single gas can be avoided. After receiving the induced current signals from each target gas-sensitive sensing component, the main controller performs redundancy verification on the detection data of similar components. First, it calculates the average detection value of the same group of components. If the deviation of the detection value of a component from the average value exceeds a preset threshold (set to ±10%), the component is determined to be abnormal, its data is automatically discarded, and the remaining valid data is used for concentration analysis. Meanwhile, the splicing seam effectively blocks heat crosstalk and signal interference between sub-sensing units. The heat from the heating layer of each gas-sensitive component only acts on the sensing layer within its own unit. The air gap in the splicing seam reduces heat transfer efficiency, ensuring that the operating temperature of each gas-sensitive component remains independently controllable. The independently configured pins ensure that the electrical signals of each sub-unit do not crosstalk with each other. The main controller can perform individual temperature control and signal acquisition for the target gas-sensitive components in each sub-unit through different pin channels, further ensuring the accuracy and real-time performance of multi-gas parallel detection.

[0039] For easier understanding, please refer to Figure 4 , Figure 4 This is a schematic diagram of the layout of a single sensor provided in an embodiment of this application, as shown below. Figure 4As shown, the layout presents a 6×6 matrix structure, integrating 36 independent gas-sensitive sensing components. Each component is covered with a corresponding sensing layer. Pins are located at the bottom edge of the layout, serving as the electrical connection interface between the sensor and the external main controller, and handling power transmission for the heating layer and signal acquisition for the electrode layer. The letters "a", "b", and "c" correspond to three different combinations of sensing layer materials (e.g., type a is adapted to Pd-doped SnO2 sensing layers, type b to Pt-doped WO3 sensing layers, and type c to Ag-doped In2O3 sensing layers). The numbers "1-6" mark the positions of different components within the same material combination. Components identified by the same letter have identical sensing layer substrates, doping elements, and fabrication processes, corresponding to the detection of the same target gas.

[0040] Specifically, the gas-sensitive sensing components with the same identifier exhibit a centrally symmetrical distribution. Taking component "a1" in the upper region as an example, its counterpart in the same column but opposite position to that in the lower region is symmetrical about the horizontal center line of the array. Similarly, components "c6" and "c6" in the lower region, and components "b3" and "b3" in the lower region, all follow this spatial symmetry rule, ensuring that the sensing layer component for each target gas contains at least two symmetrically distributed redundant units. The bottom pins are connected to the electrode layers of each component via independent metal leads (not shown in the figure). Each lead corresponds to the signal channel of one component, ensuring that the induced current signal of each component can be independently acquired by the main controller, avoiding signal crosstalk between multiple components.

[0041] As can be seen, this layout, through its symmetrical redundancy design, not only achieves parallel detection of multiple target gases within a single sensor (this layout can cover at least 3 types of gases), but also offsets detection deviations caused by process fluctuations such as film deposition uniformity and electrode contact resistance through symmetrically distributed redundant components. At the same time, the independent pin signal channel provides reliable hardware support for subsequent signal verification and concentration quantitative analysis of the main controller, effectively improving the sensor's detection stability and data reliability.

[0042] In some possible embodiments, the main controller is configured to determine multiple gas concentrations based on the gas to be measured using the plurality of gas-sensitive sensing components, including: A1. Obtain the temperature and humidity parameters of the sensor within a preset time period; A2. Multiple induced currents are generated through the multiple gas-sensitive sensing components; A3. Based on a preset relationship between the induced current and the gas concentration, determine the gas concentration corresponding to the multiple induced currents to obtain multiple first gas concentrations; A4. Search for the gas concentration calculation algorithm corresponding to the temperature and humidity parameters in the preset information database, and determine the gas concentration corresponding to the multiple induced currents based on the gas concentration calculation algorithm to obtain multiple second gas concentrations; each gas concentration in the multiple first gas concentrations corresponds one-to-one with each gas concentration in the multiple second gas concentrations; A5. Determine the difference between the multiple first gas concentrations and the multiple second gas concentrations to obtain multiple differences; A6. When the target difference is less than or equal to a preset first threshold, determine the first gas concentration corresponding to the target difference from the plurality of first gas concentrations; the target difference is any one of the plurality of differences. A7. Determine the gas type corresponding to the first gas concentration to obtain the first gas type; A8. Select the gas concentration corresponding to the first gas type from the plurality of first gas concentrations to obtain the second gas concentration; A9. Determine the target gas concentration based on the first gas concentration and the second gas concentration.

[0043] The preset time period is 10-60 seconds to ensure the stability of the acquired induced current signal. The induced current is a weak signal in the nA range, which is generated when the surface potential barrier of the sensing layer (such as Pd-WO3, Ag-Tb-In2O3, etc.) is lowered after contact with a specific gas, resulting in the directional flow of electrons, which are then collected and transmitted through the cross electrode layer. The preset relationship is a curve of induced current versus gas concentration that has been pre-fitted experimentally, with curves corresponding to different metal oxide-noble metal doping combinations (such as the curve of Pd-SnO2 versus CH4), which serves as the basis for calculating the basic concentration when there is no environmental interference. The gas concentration calculation algorithm is an environmentally adaptive algorithm (such as humidity compensation and temperature calibration algorithm) used to correct the influence of temperature and humidity on the detection results.

[0044] Specifically, the main controller first acquires temperature and humidity parameters within a preset time period, then receives the induced current generated by multiple gas-sensitive sensing components, and obtains the first gas concentration based on a preset relationship. Simultaneously, it retrieves the corresponding environmental parameter algorithm from the database to obtain the second gas concentration. Next, it calculates the difference between the two concentrations. If the target difference is ≤ a preset first threshold (±5%, matching the sensor detection accuracy), the corresponding first gas concentration is selected. After determining the effective first gas concentration, the main controller determines the first gas type based on the material specificity of the sensing layer (e.g., Pd-WO3 corresponds to SO2, Ag-Tb-In2O3 corresponds to H2). Then, it filters out all concentrations corresponding to this type (i.e., the second gas concentration) from multiple first gas concentrations. Finally, it determines the target gas concentration by averaging or weighting the first and second gas concentrations. This process integrates redundant data to offset the effects of process fluctuations (such as uneven film deposition and differences in electrode contact resistance) while ensuring the reliability of the concentration results.

[0045] It is evident that by using temperature and humidity adaptation algorithms and differential verification, the problem of decreased detection accuracy in high humidity environments can be solved, ensuring that the concentration error is less than 5% in complex environments. Secondly, by filtering and fusing redundant array data, the problem of false alarms caused by single components in traditional MOS sensors can be solved, thereby improving the reliability of detection results by more than 60%.

[0046] Please see Figure 5 , Figure 5 This is a flowchart illustrating a detection algorithm for a sensor that measures multiple gases, as provided in an embodiment of this application. This detection algorithm is applied to the main controller, such as... Figure 5As shown, after the gas to be detected comes into contact with the sensing layer material, the change in the internal current of the sensing layer material corresponds to the interaction mechanism between the metal oxide semiconductor and the gas: when the gas to be detected (such as SO2, H2, CH4, etc.) comes into contact with the sensing layer (such as Pd-WO3, Ag-Tb-In2O3, etc., doped metal oxide films), the gas molecules undergo an oxidation-reduction reaction with the oxygen anions adsorbed on the surface of the sensing layer, resulting in a decrease in the internal potential barrier of the sensing layer, and the directional flow of free electrons forms a weak induced current (on the order of nA). In the step of "reading the detection value and environmental value by the built-in controller", the "detection value" is the induced current signal transmitted by the electrode layer (cross-layout design, such as parallel cross or loop cross structure), and the "environmental value" is the temperature and humidity parameters collected by the built-in module of the sensor. For example, the characteristic that H2O can easily cause hydroxyl poisoning on the surface of metal oxides in high humidity environments is a key input for subsequent environmental interference correction. "Calling algorithms suitable for this environment from a preset information library" is based on environmental adaptive design. The information library stores compensation models corresponding to different temperature and humidity scenarios (such as water vapor attenuation correction algorithms for high humidity scenarios and heating layer temperature control deviation calibration algorithms for low temperature scenarios), which can specifically solve the problem of decreased detection accuracy of traditional sensors in complex environments. "Comparing whether the difference between the compensated concentration value and the concentration value before compensation is consistent" is the algorithm effectiveness verification step. The "consistency" judgment requires that the difference ≤ the preset first threshold (usually ±5%, matching the sensor's ppb-level detection accuracy requirement). "For the concentration signals detected by the sensing layer material at different positions of the same sensor" is based on the redundant layout of the sensor array (such as the same type of sensing layer distributed diagonally in a 6×6 matrix). The influence of single component process fluctuations (such as uneven film deposition and differences in electrode contact resistance) is eliminated through cross-validation of multiple sets of signals.

[0047] Specifically, after the gas to be detected comes into contact with the sensing layer material, a current is generated inside the sensing layer due to the change in the potential barrier. This current is collected by the cross electrode layer and transmitted to the main controller. The built-in controller synchronously reads the current detection value and the temperature and humidity values. If the ambient humidity is >80%, the humidity compensation algorithm is called from the preset information database. The correction formula (e.g., the concentration after compensation = the concentration before compensation × (1 + 0.02 × (RH - 50%))) is used to offset the inhibitory effect of water vapor on the sensing layer response. If the ambient temperature is <0℃, the temperature calibration algorithm is called to correct the problem of insufficient oxygen adsorption caused by the temperature control deviation of the heating layer. After calculating the concentration of the second gas based on the compensation algorithm, the difference is compared with the uncompensated concentration of the first gas. If the difference is ≤±5% (first threshold), the redundant signal processing stage is entered. If the difference exceeds the threshold, the algorithm call stage is returned to rematch and adapt the model to avoid the accuracy loss caused by invalid compensation. During the redundant signal processing stage, the controller retrieves concentration signals of the same type of sensing layer from different locations of the same sensor (such as matrix symmetry points or diagonals), integrates the data through mean fusion or outlier removal (such as removing outlier data with a deviation from the mean of >10%), and finally determines the final concentration value and outputs the response result. This process can effectively offset process deviations such as uneven film crystallization and poor electrode contact, thereby improving the reliability of the detection results to over 90%.

[0048] In some possible embodiments, the first metal film and the second metal film are respectively attached to the first end face and the second end face of the heating layer, so that the first metal film, the heating layer and the second metal film constitute a sandwich structure; the first end face and the second end face are disposed opposite to each other.

[0049] In some possible embodiments, the material of the heating layer is at least one of nickel-chromium alloy, platinum alloy, tungsten alloy, and polycrystalline silicon; the materials of the first metal film and the second metal film are molybdenum.

[0050] In this structure, both the first and second metal films are made of molybdenum (Mo), with a thickness controlled between 50-100 nm. They are bonded to the first and second end faces of the heating layer respectively using physical vapor deposition (PVD), forming a sandwich structure of "Mo film layer-heating layer-Mo film layer". In this structure, the density of the first and second metal films is ≥95%, and the interfacial bonding strength with the heating layer is ≥20 MPa. Their function is to provide dual protection and structural support for the heating layer, while optimizing heat conduction efficiency and electrical connection performance. The first end face of the heating layer faces the mesoporous SiO2 substrate, and the second end face faces the dense SiO2 insulating layer in the middle. Both end faces are polished to a roughness Ra ≤0.1 μm to ensure tight adhesion with the metal films and avoid heat loss or increased contact resistance caused by interfacial voids.

[0051] Specifically, during the PVD deposition process, high-energy Mo atoms bombard the end face of the heating layer, with some atoms penetrating to the surface of the heating layer (penetration depth 5-10 nm), forming a metallurgical bonding interface. This significantly improves the adhesion between the film and the heating layer, effectively resisting the risk of peeling caused by temperature cycling (-20℃~150℃) and humidity changes (0~100%RH). The heating layer is made of one of the following materials: nickel-chromium alloy, platinum alloy, tungsten alloy, or polycrystalline silicon, with a resistivity of 100-500 Ω·cm. It possesses excellent heating efficiency and high-temperature stability, while the resistivity of the Mo film is ≤5. It possesses high conductivity and oxidation resistance, effectively isolating the heating layer from direct contact with air and moisture, thus preventing oxidation failure during long-term high-temperature operation (100-300℃). The first metal film is in contact with the mesoporous SiO2 substrate below, where Mo atoms can chemically bond with the Si-O bonds on the surface of the mesoporous SiO2, further enhancing the overall connection stability between the heating layer and the substrate. The second metal film is adjacent to the intermediate dense SiO2 insulating layer above, and its smooth surface reduces the defect rate during insulating layer deposition, improving the density and insulation performance of the insulating layer. Furthermore, the second metal film is made of the same Mo material as the electrode layer's substrate. When the electrode layer overlaps with the second metal film through the openings in the intermediate dense SiO2 insulating layer, an ohmic contact is formed with a contact resistance <0.1Ω, ensuring efficient current transmission and preventing localized damage caused by excessive heating at the contact surface, thereby extending the service life of the heating layer.

[0052] Please see Figure 6 , Figure 6 This is a schematic diagram of an electrode layer structure with electrode intersections provided in an embodiment of this application, as shown below. Figure 6 As shown, the metal electrode of the electrode layer includes a positive electrode and a negative electrode. The positive electrode includes a plurality of first electrode arms arranged along a first direction; the negative electrode includes a plurality of second electrode arms extending along a second direction; the first direction and the second direction are intersecting each other in a planar projection; the plurality of first electrode arms and the plurality of second electrode arms are arranged in a cross arrangement; the cross arrangement includes at least one of parallel cross arrangement 601, curved cross arrangement 602, and spiral cross arrangement 603.

[0053] In one possible embodiment, when the positive electrode and the negative electrode are arranged in the parallel cross arrangement 601, the first direction is perpendicular to the second direction; the plurality of first electrode arms and the plurality of second electrode arms are arranged in parallel and staggered intervals. When the positive electrode and the negative electrode are arranged in the curve cross arrangement 602, the plurality of first electrode arms and the plurality of second electrode arms are distributed in a concentric arc staggered distribution; When the positive electrode and the negative electrode are arranged in a loop-shaped cross arrangement 603, the plurality of first electrode arms and the plurality of second electrode arms are loop-shaped extensions of a preset length and are staggered.

[0054] Among them, the intersection pattern of the first direction and the second direction shows different characteristics depending on the arrangement type, and the width and spacing of the electrode arms in each arrangement are consistent. The width of the electrode arms is set at 5-15μm, and the spacing between adjacent electrode arms is 10-50μm, which can maximize the effective contact area between the electrode layer and the sensing layer. In the parallel intersection arrangement 601, the first direction and the second direction are distributed perpendicularly at 90°. In the curved intersection arrangement 602, the two are distributed radially in a concentric arc shape. In the loop intersection arrangement 603, the two are distributed orthogonally in a rectangular loop path. All three distribution methods are guided by adapting to the sensing layer area of ​​different shapes.

[0055] Specifically, in the parallel cross arrangement 601, the first electrode arm of the positive electrode (+) is equidistantly distributed along the vertical direction (first direction), and the second electrode arm of the negative electrode (-) extends along the horizontal direction (second direction). The two are interwoven in a "grid-like" manner. The electrode arms are straight strip structures, and their ends converge at the lead ends of the positive and negative electrodes. This structure is adapted to the rectangular boundary of the sensing layer, enabling short-distance directional transmission of electrons. In the curved cross arrangement 602, the first electrode arm of the positive electrode (+) and the second electrode arm of the negative electrode (-) are both concentric outward convex arcs. The two types of electrodes are nested symmetrically around a central point, forming a continuous arc-shaped channel suitable for sensing layers with circular or arc-shaped boundaries. They can uniformly cover the electron transport path in the arc-shaped area. The first electrode arm of the positive electrode (+) and the second electrode arm of the negative electrode (-) in the 603 electrode are both rectangular folded structures, extending alternately in the horizontal and vertical directions in a "maze-like" pattern. Their electrode arm length is longer, covering a larger area of ​​the sensing layer. The folded path can extend the electron transport path while avoiding signal attenuation, making it suitable for current collection in large-size sensing layers. The material of the electrode arms in all three arrangements is the same as that of the electrode layer body (such as Mo / CuNi alloy / Mo sandwich structure), with a sheet resistance of <0.5Ω, ensuring low loss characteristics in current transmission.

[0056] In one possible embodiment, each gas-sensitive sensing component further includes an insulating layer; the insulating layer is attached between the heating layer and the electrode layer, the insulating layer is made of silicon dioxide, and the insulating layer is used to isolate the heating layer from contact with air to prevent oxidation of the heating layer; and to achieve electrical insulation between the electrode layer and the heating layer.

[0057] The insulating layer is a dense silicon dioxide layer, prepared using physical vapor deposition (PVD) with a thickness controlled at 200-400 nm and a porosity ≤5%. Its microstructure is continuous and non-porous, providing excellent insulation and environmental barrier properties. This insulating layer completely covers the upper surface of the heating layer, extending 10-50 μm to the outer edge of the heating layer, forming a fully enclosed protective structure. This not only prevents direct contact between air, moisture, and the heating layer but also resists the high-temperature (100-300℃) corrosion during heating layer operation due to the chemical stability of silicon dioxide. Simultaneously, the insulating layer has pre-set openings corresponding to the overlap area between the electrode layer and the heating layer. The number of openings corresponds one-to-one with the connection ends of the electrode layer, with a diameter of 8-30 μm. The edges of the openings are rounded to avoid stress concentration, providing a physical channel for ohmic contact between the electrode layer and the heating layer while ensuring electrical insulation.

[0058] Specifically, during the PVD deposition process, by controlling the deposition temperature (300-500℃) and gas atmosphere, silicon dioxide atoms are tightly packed to form a dense film with a dielectric strength ≥10kV / mm, effectively blocking current crosstalk between the electrode layer and the heating layer and avoiding short-circuit faults. The upper surface (Mo film) of the insulating layer and the heating layer forms a stable interface through chemical bonding. SiO2 molecules and oxygen atoms on the Mo film surface form Si-O-Mo chemical bonds, with an interface bonding strength ≥15MPa, resisting the risk of peeling caused by temperature cycling and humidity changes. Pre-set openings are prepared using an etching process with etching precision controlled within ±2μm, ensuring precise alignment of the opening positions with the top Mo layer of the heating layer. When the electrode layer overlaps with the heating layer through the openings, since both contact materials are Mo, an ohmic contact with a contact resistance of <0.1Ω can be formed, avoiding film damage caused by excessive heating at the contact surface. Compared to traditional organic insulating materials such as epoxy resin, this dense silica insulating layer has a water resistance rate that is more than 3 times higher. It does not show signs of aging or decomposition in long-term high-temperature working environments, and can reduce the oxidation rate of the heating layer by more than 90%, significantly extending the service life of the sensor.

[0059] In one possible embodiment, the material of the sensing layer includes an oxide material and a doped material; the oxide material is at least one of the following oxides: tin dioxide, zinc oxide, iron oxide, tungsten trioxide, and indium trioxide; the oxide material is used to sense gases in the air to generate the induced current; The doping material includes at least one of the following: gold, silver, platinum, aluminum, gallium, zirconium, and palladium; the doping material is used to enhance the gas sensing intensity of the oxide material.

[0060] The oxide materials are all typical metal-oxide-semiconductor (MOS) materials, possessing porous crystal structures and large specific surface areas (10-50 m² / g). Their surfaces readily adsorb oxygen atoms from the air, forming oxygen anions. Through redox reactions with the target gas, they induce changes in the internal potential barrier, thereby generating an induced current, serving as the substrate for gas sensing. The dopant materials are metallic elements with excellent catalytic activity or electronic control capabilities, existing in the lattice gaps or surface of the oxide materials in the form of atomic-level dispersion or nanoparticles (particle size 2-10 nm). By controlling the band gap, surface electronic states, and grain boundary barriers of the oxide, the adsorption energy of the target gas molecules is reduced, accelerating the redox reaction rate, thereby significantly improving the sensing sensitivity and response speed of the oxide material to specific gases. They are prepared through a multi-chamber layered crystallization process. At a high temperature stage (200-250℃), small-grain oxide substrates are deposited, while at a low temperature stage (50-120℃), uniform loading of the dopant material is achieved, ensuring both the number of active sites for gas sensing and avoiding structural instability caused by excessive grain refinement.

[0061] Specifically, the combination of oxide and doped materials needs to be based on the principle of gas specificity matching, with different combinations corresponding to the efficient detection of specific target gases. For example, the Pd-WO3 composite system formed by doping tungsten trioxide (WO3) and palladium (Pd) uses Pd nanoparticles as catalytic active centers, which can significantly reduce the adsorption energy of SO2 molecules on the WO3 surface, lowering the detection limit of the sensing layer to 100 ppb and shortening the response time to less than 10 seconds. Indium trioxide (In2O3), after co-doping with silver (Ag) and terbium (Tb), the surface plasmon resonance effect of Ag enhances the separation efficiency of photogenerated carriers, resulting in a 3-fold increase in the response sensitivity to H2 at the optimal operating temperature of 160℃ compared to pure In2O3, and the detection concentration can be as low as 500 ppb, and so on. The mass fraction of the doped material needs to be controlled between 0.5% and 5%. Excessive doping can easily lead to oxide lattice distortion and reduce structural stability; insufficient doping will not effectively control the electronic state, making it difficult to achieve the desired sensitivity improvement.

[0062] It is evident that by combining the gas adsorption characteristics of the oxide substrate with the activity regulation function of the doped material, the technical problems of poor selectivity, low sensitivity, and high detection limit of traditional single oxide sensing layers are effectively overcome. By matching the combination of oxide and doped material, selective detection of multiple gases such as SO2, H2, and CH4 can be achieved, meeting the needs of multi-component gas monitoring. At the same time, the electronic state regulation effect of the doped material increases the response signal intensity of the sensing layer to the target gas by 2-5 times, and the detection limit can reach the ppb level, improving the detection accuracy.

[0063] Having understood the composition and structure of the sensor for measuring multiple gases provided in this application, the following will be combined with... Figure 7The preparation method of a sensor for measuring multiple gases according to an embodiment of this application will be described. Figure 7 This is a schematic flowchart illustrating a method for fabricating a sensor for measuring multiple gases, provided in an embodiment of this application. The sensor is applied to a coating equipment, which includes an etching apparatus, an evaporation deposition apparatus, and a sputtering apparatus. The method specifically includes the following steps: S701. A mesoporous silicon dioxide film is obtained by depositing a silicon dioxide film on a substrate using the evaporation deposition apparatus based on a preset first parameter. S702. A heating layer is deposited on the mesoporous silica film to obtain a heating layer film; the heating layer film includes a sandwich structure composed of molybdenum metal, a heating alloy, and molybdenum metal. S703. The heating layer is etched by the etching device to etch the heating layer into multiple independent first regions; S704. A silicon dioxide layer is deposited on the target area using the evaporation deposition apparatus to obtain a target dense silicon dioxide layer; the target area is any one of the plurality of first areas; S705. A first metal is deposited on the target dense silicon dioxide layer using the sputtering device to obtain a target electrode layer; S706. A gas-sensitive oxide material is deposited on the target electrode layer using the sputtering device to obtain a target sensing layer; S707. After obtaining the target sensing layer, N sensing layers are sequentially formed in multiple second regions, wherein the materials of the N sensing layers are metal oxide materials with different doping methods; the multiple second regions are multiple first regions other than the target region; N is a positive integer greater than 1. S708. An inhibition layer is deposited on the N sensing layers to obtain multiple independent sensor array units; the inhibition layer has hydrophobic and oil-resistant properties to reduce the influence of the external environment on the sensor detection accuracy.

[0064] The first parameters include a deposition temperature of 300-500℃ and a gas pressure of 0.1-1Pa. By controlling these parameters, the silicon dioxide film forms a mesoporous structure with a pore size of 2-50nm and a porosity of 20%-50%. This ensures chemical bonding with the Si-O bonds on the substrate surface while utilizing the "near-vacuum" characteristic of the mesopores to achieve thermal insulation. The heating layer alloy can be a nickel-chromium alloy, platinum alloy, tungsten alloy, or polycrystalline silicon. These three materials are continuously deposited using physical vapor deposition (PVD). The Mo film thickness is controlled at 50-100nm, and the heating alloy layer thickness is 200-300nm, forming a sandwich structure that balances heating efficiency and oxidation resistance. The etching process uses dry etching with an etching accuracy of ±2μm. The area of ​​the independent first region is designed to be 0.5-2mm² to avoid heat crosstalk between adjacent regions. The target dense silicon dioxide layer has a thickness of 200-400 nm and a porosity of ≤5%, covering the entire first region and extending 10-50 μm to the edge, while reserving 8-30 μm openings for electrode layer bonding. The first metal is a sandwich combination of Mo / CuNi alloy / Mo, MoCuNi, or MoAlMo, with a film thickness of 3500 nm controlled by sputtering to ensure sheet resistance <0.5Ω. The gas-sensitive oxide material is one or more of SnO2, ZnO, Fe2O3, etc., combined with noble metal dopants such as Au, Ag, and Pt, and deposited using a multi-chamber layered crystallization process. The N value is set according to the type of gas to be detected, usually 18-50 types, and different doping combinations of the sensing layer correspond to specific gas response characteristics. The suppression layer adopts an inorganic / organic composite coating, forming columnar, bundled, or mesh-like protrusion structures by sputtering, with a protrusion height of 0.5-2 μm.

[0065] Specifically, when preparing mesoporous silica films using an evaporation deposition apparatus, high-energy silica particles bombard the substrate surface, forming a stable bond with the Si-O bonds of substrates such as glass and quartz. This significantly improves the adhesion of subsequent film layers and avoids peeling problems caused by temperature and humidity changes. When depositing the heating layer, the atoms of the bottom Mo film can penetrate 5-10 nm into the surface of the mesoporous silica film, forming a metallurgical bonding interface. The intermediate heating alloy layer, with its high resistivity, achieves temperature control based on Joule's law after energization. The top Mo film provides a stable substrate for the subsequent insulating layer. In this process, the etching process defines the boundaries of the first region using a mask, making each region an independent heating unit and ensuring independent temperature control. During the fabrication of the target dense silicon dioxide layer, the evaporation deposition rate and temperature are adjusted to ensure close atomic arrangement, achieving oxidation protection of the heating layer and electrical insulation of the electrode layer. The reserved opening positions are precisely aligned with the top Mo film of the heating layer, laying the foundation for ohmic contact. The sputtering process controls the compositional uniformity of the electrode layer, and its low sheet resistance ensures low-loss transmission of the induced current. The end design using the same Mo material as the heating layer ensures a contact resistance of <0.1Ω. When depositing the target sensing layer, a small-grain oxide substrate is first formed by high-temperature deposition at 200-250℃, followed by low-temperature deposition at 50-120℃ to achieve uniform dopant loading, balancing sensitivity and structural stability. By repeating the sensing layer fabrication process, differentially doped sensing layer arrays are formed in different second regions. Each sensing layer has a specific response to only one gas, enabling multi-component detection. Finally, during the deposition of the inhibition layer, the raised structure utilizes the surface tension of water to isolate water vapor from contact with the sensing layer, while ensuring air circulation, thus solving the problem of hydroxyl poisoning in high humidity environments.

[0066] It is evident that conventional PVD-related processes such as evaporation deposition, sputtering, and etching do not require special equipment, significantly reducing production costs. At the same time, by precisely controlling parameters such as the thickness, porosity, and composition of each film layer, the temperature control accuracy of the heating layer, the conductivity of the electrode layer, and the stability of the gas response characteristics of the sensing layer can be ensured. Furthermore, by forming sensing layer arrays with different doping combinations in stages, the types of gases that can be detected can be flexibly expanded, and by combining with splicing technology, the limitation of detecting more than 50 gases on a single substrate can be overcome.

[0067] For easier understanding, please refer to Figure 8 , Figure 8 This is a process flow diagram of a method for fabricating a sensor for measuring multiple gases provided in an embodiment of this application, as shown below. Figure 8 As shown, the process uses physical vapor deposition (PVD) and patterned etching as the operation units. It sequentially completes the preparation and shaping of each functional film layer of the sensor in the form of substrate modification, functional layer deposition, structured forming, and array integration, and finally forms an arrayed sensor unit containing multiple types of sensing layers.

[0068] The process begins with a flat substrate (such as soda-lime glass or aluminosilicate glass) as the initial base. First, a SiO2 film is deposited using PVD. This mesoporous silica film (pore size 2-50nm, porosity 20%-50%) primarily serves for heat insulation and film adhesion enhancement. Next, a heating layer is deposited using PVD. This layer has a sandwich structure of "molybdenum metal - heating alloy - molybdenum metal," which is patterned (dry etching) to define independent first regions, achieving spatial isolation of the heating units. Then, a dense SiO2 layer (porosity ≤5%, thickness 200-400nm) is deposited using PVD. After patterning, this forms a target dense silica layer, providing both oxidation protection for the heating layer and electrical insulation for the electrode layer. Finally, an electrode layer (made of Mo) is deposited using PVD. The CuNi alloy / Mo sandwich structure is patterned to etch a specific cross electrode structure; a SiO2 layer is then deposited by PVD and patterned again to reserve a precise area for the subsequent deposition of the sensing film; then the sensing film 1 (a composite system of metal oxide and noble metal doped) is prepared by PVD process, patterned and shaped, and the sensing film process is repeated, that is, the "PVD deposition-patterning" process is repeated to form sensing films 2, M+3, M+4 and other differentially doped sensing layers (M is a positive integer, different sensing layers correspond to different target gases, or they can correspond to the same target gas); finally, surface treatment is performed, that is, the suppression layer (inorganic / organic composite coating) is deposited by PVD, and after surface treatment, independent sensor array units are obtained.

[0069] Specifically, during the initial PVD deposition of mesoporous SiO2, the deposition temperature is controlled at 300-500℃ and the gas pressure at 0.1-1Pa, allowing SiO2 particles to form a porous structure on the substrate surface. Some particles penetrate 5-10nm into the substrate surface layer, significantly enhancing the interfacial adhesion with the subsequent heating layer and preventing film detachment caused by temperature and humidity cycling. During the deposition of the heating layer, a continuous PVD process is used to sequentially deposit the bottom Mo film (50-100nm), the heating alloy layer (200-300nm, such as nickel-chromium alloy or platinum alloy), and the top Mo film. (50-100nm) To ensure the interfacial bonding strength of the sandwich structure is ≥20MPa, the heating layer is patterned using a combination of photolithography and dry etching. The mask defines independent areas of 0.5-2mm², with etching precision controlled within ±2μm to avoid heat crosstalk between adjacent units. The PVD deposition rate of the dense SiO2 layer is controlled at 0.5-1nm / s to ensure close atomic packing. During patterning, 8-30μm openings are reserved, aligned with the top Mo film of the heating layer, providing a low-resistance ohmic contact channel for electrode layer bonding. The PVD process employs magnetron sputtering with a Mo / CuNi / Mo composite target. The film thickness is controlled at 3500 nm, and the sheet resistance is <0.5 Ω. Electrode arms with a width of 5-15 μm and a spacing of 10-50 μm are patterned and etched to accommodate different cross-arrangement requirements. The PVD of the sensing layer uses multi-chamber layered deposition. First, a metal oxide substrate (such as WO3 or In2O3) is deposited at a high temperature of 200-250℃, followed by the deposition of noble metal dopants (such as Pd or Ag) at a low temperature of 50-120℃ to pattern and define the sensing layer. The boundary (with an area smaller than the electrode layer) ensures effective contact between the sensing layer and the electrode layer. When repeating the sensing layer fabrication process, different oxide-dopant combinations (such as Pd-WO3, Ag-In2O3) are achieved by changing the target material, so that each sensing layer responds specifically to a particular target gas. During the PVD deposition of the suppression layer, columnar / bundle-shaped protrusions with a height of 0.5-2μm are formed by controlling the morphology of the target material, and the surface treatment process optimizes its hydrophobic angle to >110°, which not only isolates water vapor from contact with the sensing layer, but also ensures effective air circulation between the sensing layer and the sensing layer.

[0070] As can be seen, the method for fabricating a sensor for measuring multiple gases provided in this application involves depositing a silicon dioxide film on a substrate using an evaporation deposition apparatus based on preset first parameters to obtain a mesoporous silicon dioxide film; depositing a heating layer on the mesoporous silicon dioxide film to obtain a heating layer film; etching the heating layer using an etching apparatus to etch it into multiple independent first regions; depositing a silicon dioxide layer on a target region using an evaporation deposition apparatus to obtain a target dense silicon dioxide layer; the target region being any one of the multiple first regions; depositing a first metal on the target dense silicon dioxide layer using a sputtering apparatus to obtain a target electrode layer; depositing a gas-sensitive oxide material on the target electrode layer using a sputtering apparatus to obtain a target sensing layer; after obtaining the target sensing layer, sequentially forming M+4 sensing layers in multiple second regions, wherein the materials of the M sensing layers are metal oxide materials with different doping methods; the multiple second regions are multiple first regions other than the target region; M is a positive integer greater than 1; and depositing a suppression layer on the M+4 sensing layers to obtain multiple independent sensor array units. Thus, the sensor prepared by the above-described method for measuring multiple gases breaks through the limitation of traditional MOS sensors in detecting only one gas. By integrating multiple metal oxide sensing layers and noble metal doping combinations, it achieves simultaneous detection of multiple gases, solving the technical bottleneck of existing sensors detecting only one gas.

[0071] The following is combined with Figure 9 The vacuum coating equipment in the embodiments of this application will be described. Figure 9 This application provides a schematic diagram of the structure of a multi-gas sensor device, as shown in the embodiment of the present application. Figure 9 As shown, the multi-gas sensor device 900 includes a processor 910, a memory 920, a communication interface 930, and one or more programs 921. The processor 910 is communicatively connected to the memory 920 and the communication interface 930 via an internal communication bus.

[0072] The processor 910 can be a central processing unit (CPU), a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, units, and circuits described in conjunction with the disclosure of this application. The processor can also be a combination that implements computational functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, etc. The communication unit can be a communication interface, a transceiver, a transceiver circuit, etc., and the storage unit can be a memory.

[0073] The memory 920 can be volatile memory or non-volatile memory, or both. The non-volatile memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. The volatile memory can be random access memory (RAM), which is used as an external cache. By way of example, but not limitation, many forms of random access memory (RAM) are available, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate synchronous DRAM (DDR SDRAM), enhanced synchronous DRAM (ESDRAM), synchronous linked DRAM (SLDRAM), and direct rambus RAM (DR RAM).

[0074] The one or more programs 921 are stored in the memory 920 and configured to be executed by the processor 910. The one or more programs 921 include instructions for performing any step in the embodiment of the method for preparing a sensor for measuring multiple gases.

[0075] It is understood that the multi-gas sensor device 900 may include more or fewer structural elements than those shown in the block diagram above, such as a power module, physical buttons, a Wi-Fi module, a speaker, a Bluetooth module, a sensor, a display module, etc., without limitation herein. It is understood that the multi-gas sensor device 900 can be used to manufacture, for example... Figure 1 The structure of a sensor for measuring multiple gases is described above.

[0076] This application also provides a computer-readable storage medium storing a computer program for electronic data interchange that causes a computer to perform some or all of the steps of any of the methods described in the above method embodiments, wherein the computer includes a vacuum coating apparatus.

[0077] This application also provides a computer program product, which includes a non-transitory computer-readable storage medium storing a computer program operable to cause a computer to perform some or all of the steps of any of the methods described in the above method embodiments. The computer program product may be a software installation package, and the computer includes a vacuum coating apparatus.

[0078] It should be noted that, for the sake of simplicity, the above embodiments are all described as a series of actions. Those skilled in the art should understand that this application is not limited to the described order of actions, as some steps in the embodiments of this application can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions, steps, modules, or units involved are not necessarily essential to the embodiments of this application.

[0079] In the above embodiments, the descriptions of each embodiment in this application have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0080] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. This program can be stored in a computer-readable storage medium, and when executed, it can include the processes described in the above method embodiments. The aforementioned storage medium includes various media capable of storing program code, such as ROM or random access memory (RAM), magnetic disks, or optical disks.

[0081] The steps of the methods or algorithms described in the embodiments of this application can be implemented in hardware or by a processor executing software instructions. The software instructions can consist of corresponding software modules, which can be stored in RAM, flash memory, ROM, EPROM, electrically erasable programmable read-only memory (EEPROM), registers, hard disk, portable hard disk, read-only optical disk (CD-ROM), or any other form of storage medium well known in the art. An exemplary storage medium is coupled to a processor, enabling the processor to read information from and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and storage medium can reside in an ASIC. Furthermore, the ASIC can reside in a terminal device or management device. Alternatively, the processor and storage medium can exist as discrete components in the terminal device or management device.

[0082] Those skilled in the art will recognize that, in one or more of the examples above, the functions described in the embodiments of this application can be implemented, in whole or in part, by software, hardware, firmware, or any combination thereof. When implemented in software, it can be implemented, in whole or in part, in the form of a computer program product. This computer program product includes one or more computer instructions. When these computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium accessible to a computer or a data storage device such as a server or data center that integrates one or more available media. The available media can be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., digital video discs (DVDs)), or semiconductor media (e.g., solid-state disks (SSDs)).

[0083] The modules / units included in the various devices and products described in the above embodiments can be software modules / units, hardware modules / units, or a combination of both. For example, for devices and products applied to or integrated into a chip, all modules / units can be implemented using hardware methods such as circuits, or at least some modules / units can be implemented using software programs that run on a processor integrated within the chip, while the remaining (if any) modules / units can be implemented using hardware methods such as circuits. For devices and products applied to or integrated into a chip module, all modules / units can be implemented using hardware methods such as circuits. Different modules / units can be located in the same component (e.g., chip, circuit module, etc.) or different components of the chip module, or at least some modules / units can be implemented using hardware methods such as circuits. The implementation is achieved through a software program that runs on the processor integrated within the chip module. The remaining modules / units (if any) can be implemented using hardware methods such as circuits. For various devices and products applied to or integrated into terminal equipment, each of their modules / units can be implemented using hardware methods such as circuits. Different modules / units can be located in the same component (e.g., chip, circuit module, etc.) or different components within the terminal equipment. Alternatively, at least some modules / units can be implemented through a software program that runs on the processor integrated within the terminal equipment, while the remaining modules / units (if any) can be implemented using hardware methods such as circuits.

[0084] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the embodiments of this application. It should be understood that the above descriptions are merely specific embodiments of the embodiments of this application and are not intended to limit the protection scope of the embodiments of this application. Any modifications, equivalent substitutions, improvements, etc., made on the basis of the technical solutions of the embodiments of this application should be included within the protection scope of the embodiments of this application.

Claims

1. A sensor for measuring multiple gases, characterized in that, The sensor includes a main controller, a substrate, a silicon dioxide film layer disposed on the substrate, and a plurality of gas-sensitive sensing components arranged in an array on the silicon dioxide film layer, wherein each of the plurality of gas-sensitive sensing components is corresponding to detect at least one preset type of gas. Each gas-sensitive sensing component includes: A heating layer, comprising a first metal film, a second metal film, and a heating layer disposed between the first metal film and the second metal film, wherein the heating layer is electrically connected to a first wire; the heating layer is used to locally heat the gas-sensitive sensing component under the control of the main controller, so that the gas-sensitive sensing component operates within a preset temperature range. An electrode layer comprising cross-arranged metal electrodes and a second wire connected to the metal electrodes; the second wire being electrically connected to the main controller; the electrode layer being used to transmit induced current to the main controller; A sensing layer is disposed on the electrode layer, the sensing layer comprising a metal oxide semiconductor film; the sensing layer is electrically connected to the positive and negative electrodes of the electrode layer; the metal oxide semiconductor film is used to generate the induced current according to the gas; A water vapor suppression layer is disposed on the sensing layer and is distributed in a columnar, bundled, or mesh-like protrusion structure to dissipate water vapor from the sensing layer, thereby increasing the contact area between the sensing layer and the air.

2. The sensor as described in claim 1, characterized in that, The plurality of gas-sensitive sensing components are arrayed in an m-row n-column matrix structure; m and n are both positive integers greater than or equal to 2; Among them, at least two target gas sensing components for detecting the same type of target gas have the same sensing layer and are respectively arranged in symmetrical or diagonally distributed positions in the matrix structure for detecting the same target gas. The target gas sensing component is connected to the main controller through a corresponding electrode layer to detect the target gas; the target gas is any type of gas in the air.

3. The sensor as described in claim 1, characterized in that, The main controller is used to determine the concentrations of multiple gases based on the gas to be measured through the multiple gas-sensitive sensing components, including: Obtain the temperature and humidity parameters of the sensor within a preset time period; Multiple induced currents are generated through the multiple gas-sensitive sensing components; Based on a preset relationship between the induced current and the gas concentration, the gas concentration corresponding to the multiple induced currents is determined, and multiple first gas concentrations are obtained. The gas concentration calculation algorithm corresponding to the temperature and humidity parameters is searched in the preset information database, and the gas concentration corresponding to the multiple induced currents is determined based on the gas concentration calculation algorithm to obtain multiple second gas concentrations; each gas concentration in the multiple first gas concentrations corresponds one-to-one with each gas concentration in the multiple second gas concentrations; Determine the differences between the plurality of first gas concentrations and the plurality of second gas concentrations to obtain a plurality of differences; When the target difference is less than or equal to a preset first threshold, the first gas concentration corresponding to the target difference is determined from the plurality of first gas concentrations; the target difference is any one of the plurality of differences. Determine the gas type corresponding to the first gas concentration to obtain the first gas type; The gas concentration corresponding to the first gas type is selected from the plurality of first gas concentrations to obtain the second gas concentration; The target gas concentration is determined based on the first gas concentration and the second gas concentration.

4. The sensor as described in claim 1, characterized in that, The first metal film and the second metal film are respectively attached to the first end face and the second end face of the heating layer, so that the first metal film, the heating layer and the second metal film form a sandwich structure; the first end face and the second end face are arranged opposite to each other.

5. The sensor as described in claim 4, characterized in that, The heating layer is made of at least one of nickel-chromium alloy, platinum alloy, tungsten alloy, and polycrystalline silicon; the first metal film and the second metal film are made of molybdenum.

6. The sensor as described in claim 1, characterized in that, The metal electrode of the electrode layer includes a positive electrode and a negative electrode. The positive electrode includes a plurality of first electrode arms arranged along a first direction. The negative electrode includes a plurality of second electrode arms extending along a second direction. The first direction and the second direction intersect each other in a planar projection. The plurality of first electrode arms and the plurality of second electrode arms are arranged in a cross arrangement. The cross arrangement includes at least one of parallel cross arrangement, curved cross arrangement, and spiral cross arrangement.

7. The sensor as described in claim 6, characterized in that, When the positive electrode and the negative electrode are arranged in a parallel and intersecting manner, the first direction is perpendicular to the second direction; the plurality of first electrode arms and the plurality of second electrode arms are arranged in a parallel and staggered manner. When the positive electrode and the negative electrode are arranged in the curve cross arrangement, the plurality of first electrode arms and the plurality of second electrode arms are distributed in a concentric arc staggered distribution; When the positive electrode and the negative electrode are arranged in a loop-shaped cross pattern, the plurality of first electrode arms and the plurality of second electrode arms are loop-shaped extensions of a preset length and are staggered.

8. The sensor as described in claim 1, characterized in that, Each gas-sensitive sensing component further includes an insulating layer; the insulating layer is attached between the heating layer and the electrode layer, the insulating layer is made of silicon dioxide, and the insulating layer is used to isolate the heating layer from contact with air to prevent the heating layer from oxidizing; and to achieve electrical insulation between the electrode layer and the heating layer.

9. The sensor as described in claim 1, characterized in that, The material of the sensing layer includes oxide materials and doped materials; the oxide material is at least one of the following oxides: tin dioxide, zinc oxide, iron oxide, tungsten trioxide, and indium trioxide; the oxide material is used to sense gases in the air to generate the induced current; The doping material includes at least one of the following: gold, silver, platinum, aluminum, gallium, zirconium, and palladium; the doping material is used to enhance the gas sensing intensity of the oxide material.

10. A method for preparing a sensor for measuring multiple gases, characterized in that, Applied to coating equipment, the coating equipment including an etching device, an evaporation deposition device, and a sputtering device, the method includes: A mesoporous silica film is obtained by depositing a silica film on a substrate using the evaporation deposition apparatus based on a preset first parameter. A heating layer is deposited on the mesoporous silica film to obtain a heating layer film; the heating layer film comprises a sandwich structure consisting of metallic molybdenum, a heating alloy, and metallic molybdenum. The heating layer is etched by the etching device to etch the heating layer into multiple independent first regions; A dense silica layer is obtained by depositing a silica layer onto the target area using the evaporation deposition apparatus; the target area is any one of the plurality of first areas; A target electrode layer is obtained by depositing a first metal onto the target dense silicon dioxide layer using the sputtering device. The gas-sensitive oxide material is deposited on the target electrode layer using the sputtering device to obtain the target sensing layer; After obtaining the target sensing layer, N sensing layers are sequentially formed in multiple second regions, wherein the materials of the N sensing layers are metal oxide materials with different doping methods; the multiple second regions are multiple first regions other than the target region; N is a positive integer greater than 1; An inhibition layer is deposited on the N sensing layers to obtain multiple independent sensor array units; the inhibition layer has hydrophobic and oil-resistant properties to reduce the impact of the external environment on the sensor detection accuracy.

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