Multidirectional ion implantation control method, medium and system
By pre-calculating the injection parameters in each direction and automatically adjusting the target disk angle, the problems of low multi-directional injection efficiency and high risk of misoperation in the existing technology are solved, and efficient and stable multi-directional ion implantation control is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
- Filing Date
- 2025-12-19
- Publication Date
- 2026-05-01
AI Technical Summary
Existing ion implantation systems cannot achieve independent dose setting during multi-directional implantation, resulting in low efficiency, cumbersome operation, and high risk of misoperation. They also cannot support interrupted resuming of implantation, making it difficult to meet the needs of complex semiconductor manufacturing.
By pre-calculating injection parameters for each direction, including dose and angle, the target plate angle is automatically adjusted to achieve injection in all directions in one beam adjustment, avoiding film ejection and orientation stage rotation operations, and supporting the re-injection process for abnormal interruptions.
It improves injection efficiency and system stability, reduces the risk of human intervention, and enables flexible multi-directional injection control, meeting the needs of complex processes.
Smart Images
Figure CN121964462A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of ion implantation technology, specifically to a multi-directional ion implantation control method, medium, and system. Background Technology
[0002] Ion implantation is a critical doping process in semiconductor manufacturing, and its process recipes often involve implantation settings for different orientations (rotation angles). In current ion implantation systems, for wafers requiring multi-orientation implantation, a fixed total implantation dose can typically be set for the entire recipe, and the system simply distributes this total dose evenly across all orientations using arithmetic. This means that each orientation receives the same dose, and it is impossible to independently set different implantation doses and angles for different orientations according to actual process requirements.
[0003] This "single total dose + average distribution" model has obvious limitations. For example, for a wafer implanted in four directions, if the first direction has been implanted and the second direction is abnormally interrupted halfway through implantation, the existing system cannot support accurate dose replenishment (i.e., "refilling") for the second direction of the wafer, because this requires the system to be able to identify and perform subsequent operations only for the specific direction where the dose was not completed.
[0004] To indirectly achieve the effect of different doses at different orientations, a simulation scheme exists in the existing technology: an independent single-orientation recipe is created for each orientation requiring a different dose or angle. During implantation, these recipes are executed sequentially. The specific operation process is usually as follows: after completing the implantation of one orientation, the wafer is returned to the alignment stage (Loadlock / Align Chamber) and rotated to the next orientation angle. Beam current adjustment (beam tuning) is then performed to meet the requirements of the new recipe, and the wafer is then sent to the target disk for implantation of the next orientation.
[0005] like Figure 1 As shown, the following four-position injection is used as an example to introduce the conventional injection process: 1. By default, the wafer is positioned in the first position on the target disk, and the notch port is at the bottom of the wafer. 2. After the first orientation injection is completed, control the orientation stage head angle to rotate 90 degrees counterclockwise to the second orientation. At this time, the notch port will be rotated to the far right of the wafer. 3. After the second orientation injection is completed, control the orientation stage head angle to rotate counterclockwise by 90 degrees to the third orientation (180 degrees relative to the first orientation). At this time, the notch port will be rotated to the top of the wafer. 4. After injection in three directions, control the orientation stage head angle to rotate counterclockwise by 90 degrees to the fourth direction (270 degrees relative to the first direction). At this time, the notch port will be rotated to the far left of the wafer. 5. After the fourth azimuth injection is completed, control the angle of the orientation platform to rotate 90 degrees counterclockwise to return to the initial position of the first azimuth, and then complete the injection work for all azimuths.
[0006] However, this approach of simulating by creating multiple single-direction recipes has significant drawbacks: The process is cumbersome: for example, to implement a process with 16 orientations and different dosages in each orientation, it is necessary to create and manage 16 separate recipes.
[0007] Inefficient: After each orientation injection, the wafer must go through a cycle of "wafer ejection → orientation stage rotation → beam readjustment → wafer insertion", with a large amount of time wasted on wafer transfer and repeated beam stabilization processes.
[0008] High risk of misoperation: The entire process involves a large number of manual steps such as switching recipes, confirming angles, and calculating dosages, which are prone to errors due to human negligence.
[0009] In summary, existing ion implantation control systems suffer from insufficient flexibility, inability to support interrupted implantation, and low efficiency and poor reliability of simulation schemes in achieving multi-directional differentiated implantation, making it difficult to meet the increasingly complex requirements of advanced semiconductor manufacturing processes. Summary of the Invention
[0010] To address the technical problems existing in the prior art, the present invention provides a multi-directional ion implantation control method, medium, and system for improving implantation efficiency.
[0011] To solve the above-mentioned technical problems, the technical solution proposed by this invention is as follows: A method for controlling multi-directional ion implantation includes the following steps: S1. Obtain injection parameters from multiple azimuths; the injection parameters include the injection dose and injection angle for each azimuth; S2. Based on the current beam intensity, calculate the injection parameters for each orientation sequentially, and store the calculation results of the injection parameters for each orientation; the calculation results include the number of complete scans of the same region of the wafer by the ion beam and the injection speed; S3. Based on the calculation results of the stored implantation parameters, sequentially control the ion implantation system to perform implantation in each direction, wherein: If the injection dose at a certain location is zero, then skip the injection at that location; If the injection dose at a certain location is greater than zero, then an injection command is issued and the injection is executed according to the injection parameters corresponding to that location. S4. After injection in all directions is completed, perform the equipment reset operation.
[0012] Preferably, in step S2, when calculating the injection parameters for each azimuth, if the calculation of parameters for all azimuths is successful, then proceed to step S3; if the calculation for any azimuth fails, then trigger an alarm and terminate the process.
[0013] Preferably, in step S3, before switching to different orientations for injection, the target disk is automatically rotated to the corresponding angle according to the preset injection angle, without the need to remove the wafer from the target disk.
[0014] Preferably, the injection parameters further include an azimuth number and an injection angle.
[0015] Preferably, in step S3, if an abnormal interruption occurs during the injection process in a certain direction, the abnormal data is recorded and the re-injection process is started to continue to complete the unfinished injection in that direction.
[0016] The present invention also discloses a computer program product, comprising a computer program that, when executed by a processor, performs the steps of the method described above.
[0017] The present invention further discloses a computer-readable storage medium having a computer program stored thereon, the computer program executing the steps of the method described above when run by a processor.
[0018] The present invention also discloses a multi-directional ion implantation control system, including a memory and a processor connected to each other, wherein the memory stores a computer program, and the computer program executes the steps of the method described above when run by the processor.
[0019] Compared with the prior art, the advantages of the present invention are as follows: This invention, by pre-calculating injection parameters for all azimuths, can determine in advance whether the current beam is suitable for all methods, enabling injection of all methods in a single beam adjustment. Simultaneously, by modifying the lower-level computer program, it automatically rotates the azimuth angle on the target disk before injection, eliminating the cumbersome operations of ejecting the film, rotating the orientation stage, and loading the film, greatly improving injection efficiency and system stability, and avoiding operational risks caused by human intervention. Alternatively, without modifying the lower-level computer program, the upper-level computer program can read the injection dose for different azimuths, calculate injection parameters according to a single-azimuth recipe, rotate the azimuth angle, and issue injection commands, continuously calling multiple times to achieve different injection doses for different azimuths. Attached Figure Description
[0020] Figure 1 The diagram shows the four-directional injection process in the prior art; (a) is the first direction; (b) is the second direction; (c) is the third direction; and (d) is the fourth direction.
[0021] Figure 2This is a flowchart of an embodiment of the multi-directional ion implantation control method of the present invention. Detailed Implementation
[0022] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.
[0023] like Figure 2 As shown, the multi-directional ion implantation control method provided in this embodiment of the invention specifically includes the following steps: S1. Calculate and save the injection parameters for each orientation separately, taking a wafer implanted in four orientations as an example: According to Table 1, input three different injection parameters for different orientations into the host computer. The input includes: Step (orientation), Dose (dose), and Injection Angle (injection angle); other items in Table 1 should be selected according to the actual situation. Table 1
[0024] For example, define four orientations: Orientation 1: dose = D1, injection angle = A1; Orientation 2: dose = D2, injection angle = A2; Orientation 3: dose = 0 (skip this orientation), injection angle = A3; Orientation 4: dose = D4, injection angle = A4.
[0025] S2. After the wafer is mounted, a beam current adjustment is performed to obtain a stable beam current intensity value (ROI). The host computer calculates the injection parameters for each orientation sequentially and saves the calculation results for each orientation, including the number of passes (passes) and the injection speed (Imp Speed) for the same area on the wafer. S3. Based on the calculated implantation parameters, the ion implantation system is sequentially controlled to perform implantation in each direction, wherein: If the current azimuth dose setting is greater than 0, then a command to calculate the injection parameters is sent to the lower-level computer. If the dose setting for the current azimuth is Dose=0, then the calculation of the pass count for this azimuth is directly output as 0, and no command to calculate the injection parameters is sent to the lower-level computer. If all azimuth injection parameters are successfully calculated, then the injection action in S3 is performed; otherwise, an alarm is triggered.
[0026] The host computer sends injection commands for each direction to the slave computer in sequence. Taking a 2-direction Recipe as an example: If the total number of passes for the first position is 0, the injection for the first position is skipped directly. Otherwise, the injection parameters for the first position are sent first, and then the injection command (such as controlling the target disk to rotate to angle A1) is sent to perform normal injection. If an abnormal interruption occurs during the injection of the first position, the host computer first sends the abnormal interruption data, and then sends the re-injection command to perform the re-injection for the first position. Before executing the second directional injection, the host computer first determines whether to change the injection angle based on the set angle (such as angle A2); If the total number of passes for the second position is 0, skip directly; otherwise, send the injection parameters for the second position first, then send the injection command and perform normal injection (without removing the wafer from the target disk). If an abnormal interruption occurs during the injection process for the second position, the host computer first sends the abnormal interruption data, then sends the re-injection command and performs the re-injection for the second position.
[0027] And so on, completing all directions.
[0028] S4. After all directions are executed, the host computer executes the operation of returning all target disk motors to their initial positions to complete the injection.
[0029] The recipe of this invention supports setting different injection doses and injection angles for different orientations; before injection, the injection parameters for each orientation are calculated, and it is determined in advance whether the current beam is suitable for injection in all orientations. It can achieve one beam adjustment to meet the needs of injection in all orientations without having to adjust the beam multiple times during the injection process; between injections in different orientations, there is no need to perform back-and-forth wafer ejection and wafer insertion actions. All processes are completed on the target disk.
[0030] This invention, by pre-calculating injection parameters for all azimuths, can determine in advance whether the current beam is suitable for all methods, enabling injection of all methods in a single beam adjustment. Simultaneously, by modifying the lower-level computer program, the azimuth angle of the target disk is automatically rotated before injection, eliminating the cumbersome operations of ejecting the film, rotating the orientation stage, and loading the film, greatly improving injection efficiency and system stability, and avoiding operational risks caused by human intervention. Alternatively, without modifying the lower-level computer program, the upper-level computer program can read the injection dose for different azimuths, calculate injection parameters according to a single-azimuth recipe, rotate the azimuth angle, and issue injection commands, continuously calling multiple times to achieve different injection doses for different azimuths.
[0031] This invention also provides a computer program product, including a computer program that, when run by a processor, executes the steps of the method described above.
[0032] The present invention further provides a computer-readable storage medium having a computer program stored thereon, the computer program executing the steps of the method described above when run by a processor.
[0033] This invention also provides a multi-directional ion implantation control system, including a memory and a processor connected to each other. The memory stores a computer program, which, when run by the processor, executes the steps of the method described above.
[0034] The products, media, and systems of the present invention, corresponding to the methods described above, also possess the advantages described above.
[0035] The present invention can implement all or part of the processes in the methods of the above embodiments, or it can be implemented by hardware related to computer program instructions. The computer program can be stored in a computer-readable storage medium. When the computer program is executed by a processor, it can implement the steps of the above method embodiments. The computer program includes computer program code, which can be in the form of source code, object code, executable file, or some intermediate form. The computer-readable storage medium includes: any entity or device capable of carrying computer program code, recording media, USB flash drive, portable hard drive, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. The memory is used to store computer programs and / or modules. The processor implements various functions by running or executing the computer programs and / or modules stored in the memory, and by calling data stored in the memory. The memory may include high-speed random access memory, as well as non-volatile memory, such as hard disks, RAM, plug-in hard disks, smart media cards (SMC), secure digital (SD) cards, flash cards, at least one disk storage device, flash memory device, or other volatile solid-state storage devices.
[0036] Explanation of related terms: Fab plant: The core of the semiconductor industry, referring to a semiconductor manufacturing plant.
[0037] FA Control Module: The FA control simulation in a fab is a highly complex system that deeply integrates process technology, automation technology, and information technology. Its ultimate goal is to ensure that chips can still achieve extremely high performance, yield, and production efficiency in large-scale manufacturing through precise control of every process step, every piece of equipment, and every wafer.
[0038] Ion implantation: Ion implantation is a high-tech process that achieves precise doping or surface modification by injecting a high-energy ion beam into the surface of a material.
[0039] In chip manufacturing, a recipe is a list of parameters. It is a precise "instruction set" for the entire semiconductor manufacturing process, which directly determines the performance, yield, and cost of the final chip. It includes process steps, equipment parameters, material parameters, and control parameters.
[0040] Implantation orientation: In semiconductor ion implantation processes, the "implantation orientation" is a critical parameter that requires precise control, as it directly affects the doping effect and the performance of the final device. It mainly includes two core angles: the tilt angle and the rotation angle.
[0041] Implantation dose: This is a core control parameter in the ion implantation process of chip manufacturing, which directly determines the final electrical properties of semiconductor materials. It is defined as the number of ions implanted per unit area of wafer surface, usually expressed as ions / cm² (ions per square centimeter).
[0042] Pass: In ion implantation, the "pass number" is a core concept that directly affects process precision and efficiency. Simply put, it refers to the number of times the ion beam completely scans the same area on the wafer.
[0043] Notch: A small V-shaped or U-shaped notch cut out at the edge of the wafer for wafer positioning.
[0044] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should be considered within the scope of protection of the present invention.
Claims
1. A method for controlling multi-directional ion implantation, characterized in that, Includes the following steps: S1. Obtain injection parameters from multiple azimuths; the injection parameters include the injection dose and injection angle for each azimuth; S2. Based on the current beam intensity, calculate the injection parameters for each orientation sequentially, and store the calculation results of the injection parameters for each orientation; the calculation results include the number of complete scans of the same region of the wafer by the ion beam and the injection speed; S3. Based on the calculation results of the stored implantation parameters, sequentially control the ion implantation system to perform implantation in each direction, wherein: If the injection dose at a certain location is zero, then skip the injection at that location; If the injection dose at a certain location is greater than zero, then an injection command is issued and the injection is executed according to the injection parameters corresponding to that location. S4. After injection in all directions is completed, perform the equipment reset operation.
2. The multi-directional ion implantation control method according to claim 1, characterized in that, In step S2, when calculating the injection parameters for each azimuth, if the calculation of parameters for all azimuths is successful, proceed to step S3; if the calculation of any azimuth fails, trigger an alarm and terminate the process.
3. The multi-directional ion implantation control method according to claim 1, characterized in that, In step S3, before switching to different orientations for injection, the target disk is automatically rotated to the corresponding angle according to the preset injection angle, without the need to remove the wafer from the target disk.
4. The multi-directional ion implantation control method according to claim 1, 2, or 3, characterized in that, The injection parameters also include the azimuth number and the injection angle.
5. The multi-directional ion implantation control method according to claim 1, 2, or 3, characterized in that, In step S3, if an abnormal interruption occurs during the injection process in a certain direction, the abnormal data is recorded and the re-injection process is started to continue to complete the unfinished injection in that direction.
6. A computer program product, comprising a computer program, characterized in that, The computer program is executed by the processor to perform the steps of the method as described in any one of claims 1-5.
7. A computer-readable storage medium having a computer program stored thereon, characterized in that, The computer program, when run by a processor, performs the steps of the method as described in any one of claims 1-5.
8. A multi-directional ion implantation control system, comprising a memory and a processor interconnected thereon, wherein the memory stores a computer program, characterized in that, The computer program, when run by a processor, performs the steps of the method as described in any one of claims 1-5.