Gas supply system for epitaxial equipment and silicon carbide epitaxial equipment

Abstract

The invention discloses a gas supply system for epitaxial equipment and silicon carbide epitaxial equipment. The device comprises a first gas pipeline, a second gas pipeline, a third gas pipeline, a fourth gas pipeline, a fifth gas pipeline, a sixth gas pipeline, a seventh gas pipeline, a first pipeline, a second pipeline and a third pipeline, one end of the second pipeline is connected with extension equipment, the other end of the second pipeline is connected to the second gas pipeline, one end of the third pipeline is connected with the extension equipment, and the other end of the third pipeline is connected with the extension equipment. A first gas pipeline and a seventh gas pipeline are respectively arranged at the other ends of the first gas pipeline and the sixth gas pipeline, purging gas is introduced into the first gas pipeline, carrier gas is introduced into the second gas pipeline, and process gas is introduced into the third gas pipeline to the sixth gas pipeline. And the system can configure corresponding process gas according to requirements, so that the pipeline adjustment time is shortened.

Description

Technical Field

[0001] This application relates to the field of epitaxial technology, specifically to a gas supply system for epitaxial equipment and a silicon carbide epitaxial equipment. Background Technology

[0002] Silicon carbide (SiC) semiconductors, as third-generation semiconductor materials, have the characteristics of high critical breakdown field strength, high thermal conductivity, high electron saturation drift velocity, and large bandgap, which greatly expand the energy handling capabilities of power devices and can meet the requirements of next-generation power electronic equipment for power devices to operate under higher power, smaller size, and harsher conditions.

[0003] Currently, most SiC epitaxial films are prepared using high-temperature CVD epitaxy equipment. The gas supply system of this equipment, ensuring a stable supply and precise control of various source and carrier gases, plays a decisive role in the quality of the SiC epitaxial film. A typical gas supply system integrates the reaction chamber, gas delivery system, pressure control system, temperature control system, exhaust gas treatment system, and safety interlock system into a single unit. Sudden changes or even minor fluctuations in the supply system can lead to a decrease in product yield and increase the production cost of SiC epitaxy. Summary of the Invention

[0004] To overcome the above-mentioned shortcomings, the purpose of this application is to provide a gas supply system for epitaxial equipment and a silicon carbide epitaxial equipment, wherein the gas supply system can switch the matching process gas according to different needs to realize the growth of various epitaxial films.

[0005] To achieve the above objectives, this application adopts the following technical solution:

[0006] A gas supply system for epitaxial devices, comprising:

[0007] First gas pipeline, second gas pipeline, third gas pipeline, fourth gas pipeline, fifth gas pipeline and sixth gas pipeline,

[0008] First pipeline, second pipeline and third pipeline,

[0009] One end of the first pipeline is connected to the epitaxial device, and the other end is connected to the third gas pipeline, the fourth gas pipeline, the fifth gas pipeline, the sixth gas pipeline (gas6), the first MO source, and the second MO source, respectively.

[0010] One end of the second pipeline is connected to the epitaxial device, and the other end is connected to the second gas pipeline.

[0011] One end of the third pipeline is connected to the epitaxial device, and the other end is connected to the first gas pipeline.

[0012] The first gas line carries purge gas, the second gas line carries carrier gas, and the third through sixth gas lines carry process gas. This gas supply system can provide matching process gases according to different needs, enabling the growth of various epitaxial films. It also provides purge gas during maintenance of the epitaxial equipment.

[0013] Preferably, the gas supply system further includes a fourth pipeline, one end of which is connected to the extension device and the other end of which is connected to the third pipeline, through which purge gas is introduced into the extension device.

[0014] Preferably, the first gas pipeline is connected to the second gas pipeline via an eleventh pneumatic valve.

[0015] Preferably, the first gas pipeline is connected to the third gas pipeline via a seventh pneumatic valve;

[0016] The first gas pipeline is connected to the fourth gas pipeline via the eighth pneumatic valve;

[0017] The first gas pipeline is connected to the fifth gas pipeline via the ninth pneumatic valve;

[0018] The first gas line is connected to the sixth gas line via the tenth pneumatic valve V. Preferably, the first gas line is connected to a manifold, which in turn connects to the seventh and tenth pneumatic valves.

[0019] Preferably, the second gas pipeline is connected to the first MO source via a first check valve and to the second MO source via a second check valve.

[0020] Preferably, the gas supply system further includes a seventh gas pipeline, which is connected to the first gas pipeline, with the connection point located upstream of the first pneumatic valve. The seventh gas pipeline is also connected to the third pipeline, through which gas is introduced into the extended equipment.

[0021] Manual valves are installed on the inlet side of the first, second, third, fourth, fifth, sixth, and seventh gas pipelines. This facilitates manual adjustment during maintenance.

[0022] Preferably, the gas supply system further includes a fifth pipeline, which is connected to an external device for discharging gas.

[0023] Preferably, the fifth pipeline includes a first exhaust gas exhaust manifold, a second exhaust gas exhaust manifold, and a third exhaust gas exhaust manifold.

[0024] One side of the first exhaust manifold L51 is connected to the upstream of the pneumatic ball valve EPV1, which is configured on the fifth pipeline.

[0025] One side of the second exhaust manifold L52 is connected to the downstream of the pneumatic ball valve EPV1, which is located on the fifth pipeline.

[0026] One side of the third exhaust manifold L53 is connected to the upstream of the pneumatic ball valve EPV2, which is configured on the fifth pipeline.

[0027] This application provides a silicon carbide epitaxial device, which has a housing and a spray device on the housing. The spray device is connected to the gas supply system described above, and the bottom side of the housing is connected to an exhaust gas discharge pipe through a pipeline.

[0028] Preferably, a pressure gauge is connected to the housing to detect the pressure in the reaction chamber.

[0029] Beneficial effects

[0030] The gas supply system proposed in this application is used on a silicon carbide epitaxial equipment. Through the design of the gas supply pipeline, the gas flow path can be adjusted by changing the valves on the pipeline according to different needs, allowing for the configuration of different process gases and the growth of various epitaxial films. This process requires no pipeline adjustments. A vacuum pump and butterfly valve are installed on the exhaust gas pipeline to control the reaction pressure within the reaction chamber. Manual valves are installed upstream and downstream of the filter and vacuum pump for convenient maintenance and replacement, without affecting other pipelines during maintenance. Attached Figure Description

[0031] The accompanying drawings are provided to illustrate the technical solutions of this disclosure and form part of the specification. They are used together with the embodiments of this disclosure to explain the technical solutions of this disclosure and do not constitute a limitation on the technical solutions of this disclosure. The shapes and sizes of the components in the drawings do not reflect actual proportions and are only intended to illustrate the content of this application.

[0032] Figure 1 This is a schematic diagram of a gas supply system according to an embodiment of this application;

[0033] Figure 2 This is a schematic diagram of a gas supply system according to another embodiment of this application. Detailed Implementation

[0034] The above-described solution will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of this application. The implementation conditions used in the embodiments may be further adjusted according to the conditions of specific manufacturers, and the implementation conditions not specified are generally those in routine experiments.

[0035] Currently, SiC thin films are mostly grown using CVD (Continuous Chemical Vapor Deposition) technology. This technology allows for precise control of the epitaxial layer thickness and concentration, produces fewer epitaxial defects, and has a moderate growth rate, making it the only commercially viable SiC epitaxial growth technology. In the current CVD epitaxy process of SiC, silane (SiH4) and propane (C3H8) are typically used as the source gases for Si and C, respectively, with hydrogen (H2) as the carrier gas. The basic reaction formula is as follows:

[0036] 3SiH4 + C3H8 → 3SiC + 10H2

[0037] Epitaxial growth of an epitaxial layer with specified doping types and concentrations that meet design requirements is a prerequisite for the fabrication of 4H-SiC devices. For 4H-SiC semiconductors, nitrogen (N) and phosphorus (P) are typically used as n-type dopants, while aluminum (Al) is used as a p-type dopant. Current CVD equipment requires gas path adjustments when switching between p-type and n-type doping, a cumbersome, time-consuming process that requires specialized personnel.

[0038] To this end, the applicant improved the gas supply system of the epitaxial equipment. The improved gas supply system is configured with matching process gases according to different needs to achieve the growth of various epitaxial films.

[0039] This application discloses a gas supply system for epitaxial equipment and a silicon carbide epitaxial equipment. The gas supply system includes a first gas pipeline, a second gas pipeline, a third gas pipeline, a fourth gas pipeline, a fifth gas pipeline, a sixth gas pipeline, a seventh gas pipeline, a first MO source and its matching pipeline, a second MO source pipeline and its matching pipeline, and first pipeline L1, second pipeline L2, and third pipeline L3 (collectively referred to as pipelines). Each pipeline is equipped with at least one of a mass flow controller (MFC / M), a pressure controller (PC), and a pneumatic valve. The flow controller MFC, pressure controller PC, and pneumatic valve are respectively connected to a control module (such as a PLC) and operate based on instructions from the control module to precisely control the amount of each reactant entering the reaction chamber. This gas supply system can be configured with corresponding process gases according to requirements, and the gas flow path (flow radius) can be adjusted by opening or closing the pneumatic valve and / or manual valve, thereby reducing pipeline adjustment time. Both the MFC and PC are field intelligent instruments. The former consists of a flow meter, a control valve, and a closed-loop control circuit, while the latter consists of a pressure gauge, a control valve, and a closed-loop valve control circuit. Preferably, the MFC and PC are connected to the PLC via RS485 for point-to-point communication. The host computer interacts with the PLC to enable the hardware to react according to a pre-programmed process, ultimately growing a SiC epitaxial film within the reaction chamber. The gas supply system can be configured with different process gases according to different needs. One-way valves (CV1-CV8) are installed between the carrier gas and the process gas to prevent backflow of process gas into the carrier gas pipeline. A switching valve is installed between the carrier gas and the process gas to switch between them. This allows for the growth of various epitaxial films. The pressure inside the reaction chamber can be precisely controlled during the process.

[0040] The gas supply system and silicon carbide epitaxial equipment proposed in this application will now be described with reference to the accompanying drawings.

[0041] The silicon carbide epitaxial equipment includes: a housing, with a spray device provided at one end of the housing.

[0042] A rotating support component is located on the bottom side of the housing. A tray is located at the end of this rotating support component and is positioned opposite the spraying device. This tray is used to hold the substrate (also called a wafer). A bottom heater is located within the rotating support component. This bottom heater is energized to generate heat, creating a uniform temperature field on the substrate side (e.g., for a 6 or 8-inch substrate, the temperature difference between the center and the edge of the substrate is less than 2°C). The tray can be a graphite tray or a tray with a graphite coating. The spraying device is connected to a gas supply system via piping, through which process gases are introduced into the housing (i.e., the reaction chamber) to grow silicon carbide epitaxy on the substrate. This silicon carbide epitaxial equipment can be as disclosed in CN116397326A.

[0043] The gas supply system proposed in this application will now be described.

[0044] like Figure 1 The diagram shown is a schematic diagram of a gas supply system according to an embodiment of this application.

[0045] The top and bottom sides of the casing are connected to the air supply system via pipelines. For example, the top side is connected to the air supply system via a spray device. The spray device on the top side is connected to the air supply system via the first pipeline L1 to the fourth pipeline L4. The bottom side of the casing is connected to the exhaust gas discharge pipeline via a pipeline.

[0046] The third pipeline L3 and the fourth pipeline L4 are connected to the first gas pipeline Gas1 via pipelines, and the seventh gas pipeline Gas7 is connected to the first gas pipeline Gas1. The first gas pipeline Gas1 is equipped with a mass flow controller MFC (M11), the third pipeline L3 is equipped with a pneumatic valve V36, and the fourth pipeline L4 is equipped with a pneumatic valve V37. The first gas pipeline Gas1 is equipped with a manual valve MV1, a pressure regulating valve PS, and a pneumatic valve V1, and the seventh gas pipeline Gas7 is equipped with a manual valve MV12. The second gas pipeline Gas2 is connected to the exhaust gas pipeline L5, and the second gas pipeline Gas2 is equipped with a manual valve MV2, a pressure regulating valve PS, a pneumatic valve V2, a normally closed valve V11-C, a pressure valve PC1, a pneumatic valve V55, and a check valve CV7. A pneumatic valve V37 (Purge Final Valve) is installed on the fourth pipeline L4. This allows for the opening of valve V37 during maintenance of the external equipment to purge the cavity body, reducing corrosion of the internal pipelines by process gases. Pneumatic valves V34-37 are normally closed. A pneumatic valve V34 and a mass flow meter M13 are installed on the first pipeline L1. A pneumatic valve V35 and a mass flow meter M12 are installed on the second pipeline L2 and connected to (connected to)...

[0047] The second gas pipeline Gas2 and mass flow meter M8 are connected to the first pipeline L1 via mass flow meter M8. The third pipeline L3 is equipped with a pneumatic valve V36 and a mass flow meter M11.

[0048] The third gas pipeline Gas3 is divided into two paths via mass flow controller M2. One path connects to the first pipeline L1 via pneumatic valve V22, and the other path connects to the exhaust gas pipeline L5 via pneumatic valve V23, pressure valve PC1, pneumatic valve V55, and check valve CV7, and also connects to the exhaust gas pipeline L5 via pneumatic valve V38. Upstream of pneumatic valve V22 in the third gas pipeline Gas3, pneumatic valve V3, pneumatic valve V12-C, and mass flow meter M2 are also installed.

[0049] The fourth gas line Gas4 is divided into two branches via mass flow controller M3. One branch connects to the first line L1 via pneumatic valve V24, and the other branch connects to the exhaust gas line L5 via pneumatic valve V25, pressure valve PC1, pneumatic valve V55, and check valve CV7, and also connects to the exhaust gas line L5 via pneumatic valve V38. Upstream of pneumatic valve V24 in the fourth gas line Gas4, there is also a pneumatic valve V4, a pneumatic valve V13-C, and a mass flow meter M3.

[0050] The fifth gas line Gas5 is divided into two branches via mass flow controller M4. One branch connects to the first line L1 via pneumatic valve V26, and the other branch connects (is linked) to the exhaust gas discharge line L5 via pneumatic valve V27, pressure valve PC1, pneumatic valve V55, and check valve CV7, and also connects to the exhaust gas discharge line L5 via pneumatic valve V38. Upstream of pneumatic valve V26, the fifth gas line Gas5 is also equipped with pneumatic valve V5, pneumatic valve V14-C, and mass flow meter M4.

[0051] The sixth gas line, Gas6, is split into two branches after passing through the mass flow controller M5. One branch connects to the first line L1 via pneumatic valve V28, and the other branch connects to the exhaust gas line L5 via pneumatic valve V29, pressure valve PC1, pneumatic valve V55, and check valve CV7, and also connects to the exhaust gas line L5 via pneumatic valve V38. Pressure regulating valves PS are installed on all gas lines from Gas3 to Gas6. In this embodiment, Gas3 is equipped with a manual valve MV3 and a pneumatic valve V3, Gas4 with a manual valve MV4 and a pneumatic valve V4, Gas5 with a manual valve MV5 and a pneumatic valve V5, and Gas6 with a manual valve MV6 and a pneumatic valve V6. A pressure balance valve V38 is configured; during the process, this valve is open to maintain pressure balance between the reaction chamber and the gas lines. The system is equipped with pneumatic valve V55 (Gas Box To Atm Valve) and check valve CV7 (pressure relief valve). When the equipment is not in operation, the purge gas passes through the process gas pipeline, then through pneumatic valve V55 and check valve CV7, directly to the exhaust gas system, ensuring that the gas path is always in a state of overall purging. Upstream of pneumatic valve V28, on the sixth gas pipeline Gas6, pneumatic valve V6, pneumatic valve V15-C, and mass flow meter M5 are also installed.

[0052] The liquid gas source (MO source 1) has a first outlet pipe 1a, which is connected to a first pipe L1. The first outlet pipe 1a is equipped with a pneumatic valve V18s, a pressure valve PC3, and a pneumatic valve V30. The first inlet pipe 1b is connected to the Gas2 gas pipe via a one-way valve CV1. The first inlet pipe 1b is equipped with a pneumatic valve V18 and a mass flow controller M6. The first inlet pipe 1a has a first branch 1a1, which is connected to pipe a via a pneumatic valve V19s. A pneumatic valve V16 is installed between the first inlet pipe 1a and the first outlet pipe 1b.

[0053] The liquid gas source (MO source 2) has a second outlet pipe 2a, which is connected to the first pipe L1. The second outlet pipe 2a is equipped with a pneumatic valve V20s, a pressure valve PC4, and a pneumatic valve V32. The second inlet pipe 2b is connected to the Gas2 gas pipe via a one-way valve CV2. The first inlet pipe 1b is equipped with a pneumatic valve V20 and a mass flow controller M7. The second outlet pipe 2a has a third branch 2a1, which is connected to pipe a via a pneumatic valve V20s. The fourth pipe 2b has a fourth branch 2b 1, which is connected to pipe a via a pneumatic valve V20. A pneumatic valve V17 is installed between the first outlet pipe 1a and the first inlet pipe 1b. Pneumatic valves V16 / 17, V18 / 20, and V19 / 21 (also known as VAC (V19 / V21)) are used in this pneumatic circuit. They are equipped with MO Bypass (V16, V17), MO Switch (V18, V20), and MO VAC (V19, V21). When used in combination, they can achieve functions such as precise control of liquid gas source, rapid purging, and rapid source replacement.

[0054] The bottom side of the housing is connected to the exhaust gas outlet pipe L5. The bottom of the housing has an outlet (not shown), also called the exhaust gas outlet, which is connected to the exhaust gas outlet pipe L5 and through which the gas is discharged.

[0055] In the above embodiments, the configuration of components such as pneumatic valves is shown in Table 1 below: NC is normally closed, NO is normally open. They are respectively connected to the control module (such as a PLC module) and act based on instructions, so that the epitaxial equipment operates in different states such as epitaxial growth, epitaxial process testing, abnormal exit, and purging of the reaction chamber, etc.).

[0056]

[0057] Table 1

[0058] In Table 1, Inlet Valve represents the intake valve, Purge Valve represents the purge valve, Process Gas Switching Valve represents the process gas switching valve, MO Bypass represents the MO bypass, MO Switch represents the MO switch, Run Valve represents the running valve, Vent Valve represents the exhaust valve, Final Valve represents the final valve, and Balance Valve represents the balance valve.

[0059] In one embodiment, the epitaxial device performs the following actions when purging the reaction chamber:

[0060] S1: Turn off Pressure Balance Valve (V38) and turn on Gas Box To Atm Valve (V55);

[0061] S2: Disable Leak Check Valve (V51, V52, V53);

[0062] S3: Open Inlet Valve (V1, V2, V3, V4, V5, V6);

[0063] S4: Close Purge Valve (V7, V8, V9, V10), open Purge Valve (V11);

[0064] S5: Disable Process Gas Switching Valve (V11-C, V12-C, V13-C, V14-C, V15-C);

[0065] S6: Turn off MO VAC (V19, V19s, V21, V21s), turn off MO Switch (V18, V18s, V20, V20s), and turn on MO Bypass (V16, V17);

[0066] S7: Disable Run Valve (V22, V24, V26, V28, V30, V32);

[0067] S8: Open Vent Valve (V23, V25, V27, V29, V31, V33);

[0068] S9: Open Final Valve (V34, V35, V36);

[0069] S10: M1-M13 ramp to the default value in 5 seconds, PC1-PC4 ramp to the default value in 5 seconds;

[0070] S11: Ramp M11, M12, and M13 to 0 for 3 seconds;

[0071] S12: Open EPV1, open EPV2, open butterfly valve, opening degree 100%;

[0072] Loop through Purge contents:

[0073] a) When the chamber pressure is less than or equal to 10 mbar (or other values), wait for 60 seconds (or other values);

[0074] b) Ramp M11, M12, and M13 to half of their maximum range for 10 seconds, then close the butterfly valve;

[0075] c) When the chamber pressure is greater than or equal to 300 mbar, ramp M11, M12, and M13 to 0 for 3 seconds, then open the butterfly valve to 100% opening.

[0076] S13: After the cycle ends, wait until the pressure of PT1 in the chamber is less than or equal to 1 mbar before the Routine ends.

[0077] In one embodiment, when the epitaxial device is operating in the process preparation state (also known as the process idle state, in which process testing can be performed at any time), the following actions are performed:

[0078] S1: Turn off Pressure Balance Valve (V38) and turn on Gas Box To Atm Valve (V55);

[0079] S2: Disable Leak Check Valve (V51, V52, V53);

[0080] S3: Open Inlet Valve (V1, V2, V3, V4, V5, V6);

[0081] S4: Close Purge Valve (V7, V8, V9, V10), open Purge Valve (V11);

[0082] S5: Disable Process Gas Switching Valve (V11-C, V12-C, V13-C, V14-C, V15-C);

[0083] S6: Turn off MO VAC (V19, V19s, V21, V21s), turn off MO Switch (V18, V18s, V20, V20s), and turn on MO Bypass (V16, V17);

[0084] S7: Disable Run Valve (V22, V24, V26, V28, V30, V32);

[0085] S8: Open Vent Valve (V23, V25, V27, V29, V31, V33);

[0086] S9: Open Final Valve (V34, V35, V36);

[0087] S10: M1-M13 ramp to the default value in 5 seconds, PC1-PC4 ramp to the default value in 5 seconds;

[0088] S11: Open EPV1, open EPV2, open butterfly valve, pressure control mode;

[0089] S12: Servo pressure reaches 300mbar (process operating pressure), Routine ends.

[0090] In one embodiment, when the epitaxial device is operating in the Process Gas Line, the purging process performs the following actions:

[0091] Step 1: Close the manual valves (MV2-MV6) at the Process Gas inlet end;

[0092] Step 2: Turn off Pressure Balance Valve (V38) and turn on Gas Box To Atm Valve (V55);

[0093] Step 3: Close Leak Check Valve (V51, V52), and open V53;

[0094] Step 4: Open Inlet Valve (V1, V2, V3, V4, V5, V6);

[0095] Step 5: Open Purge Valve (V7, V8, V9, V10), open Purge Valve (V11);

[0096] Step 6: Turn on the Process Gas Switching Valve (V11-C, V12-C, V13-C, V14-C, V15-C);

[0097] Step 7: Turn off MO VAC (V19, V19s, V21, V21s), turn off MO Switch (V18, V18s, V20, V20s), and turn on MO Bypass (V16, V17);

[0098] Step 8: Open Run Valve (V22, V24, V26, V28, V30, V32);

[0099] Step 9: Open Vent Valve (V23, V25, V27, V29, V31, V33);

[0100] Step 10: Close Final Valve (V34, V35, V36, V37);

[0101] Step 10: Ramp M1-M13 to half of the maximum range in 5 seconds, and Ramp PC1-PC4 to the default value in 5 seconds;

[0102] Step 11: Turn off TV, turn off EPV2, and turn on EPV1;

[0103] Step 12: Turn on the Pressure Balance Valve (V38) and turn off the Gas Box To Atm Valve (V55).

[0104] Loop content:

[0105] Turn off V1 and wait for the Delay time (configurable);

[0106] Turn off Pressure Balance Valve (V38) and turn on Gas Box To Atm Valve (V55);

[0107] Turn on V1, wait for the PT2 value to be greater than 600mbar (configurable), then turn off V1;

[0108] Step 13: Execute the loop content, stop after reaching the number of loops (configurable), and the Routine ends.

[0109] In one embodiment, when the epitaxial device is running, the cavity is rapidly evacuated to a vacuum state, and this vacuum state is maintained, the purging process performs the following actions:

[0110] Step 1: Turn off Pressure Balance Valve (V38) and turn on Gas Box To Atm Valve (V55);

[0111] Step 2: Close Leak Check Valve (V51, V52, V53);

[0112] Step 3: Open Inlet Valve (V1, V2, V3, V4, V5, V6);

[0113] Step 4: Close Purge Valve (V7, V8, V9, V10) and open Purge Valve (V11);

[0114] Step 5: Turn off the Process Gas Switching Valve (V11-C, V12-C, V13-C, V14-C, V15-C);

[0115] Step 6: Turn off MO VAC (V19, V19s, V21, V21s), turn off MO Switch (V18, V18s, V20, V20s), and turn on MO Bypass (V16, V17);

[0116] Step 7: Disable Run Valve (V22, V24, V26, V28, V30, V32);

[0117] Step 8: Open Vent Valve (V23, V25, V27, V29, V31, V33);

[0118] Step 9: Open Final Valve (V34, V35, V36);

[0119] Step 10: Ramp M1-M13 to the default value for 5 seconds, and PC1-PC4 to the default value for 5 seconds;

[0120] Step 11: Ramp M11, M12, and M13 to 0 for 3 seconds;

[0121] Step 12: Open EPV1, open EPV2, open the butterfly valve, opening degree 100%;

[0122] Step 13: When the pressure PT1 in the chamber is less than or equal to 1 mbar, the Routine ends.

[0123] In one embodiment, the exhaust gas discharge pipeline L5 is equipped with a first exhaust gas discharge manifold L51, a second exhaust gas discharge manifold L52, and a third exhaust gas discharge manifold L53. The first exhaust gas discharge manifold L51 is equipped with a pneumatic valve V56 and a one-way valve CV8. The second exhaust gas discharge manifold L52 is equipped with a pneumatic valve V51 and a one-way valve CV8. The third exhaust gas discharge manifold L53 is equipped with a pneumatic valve V54, a manual valve MV11, and a negative pressure pump. The first exhaust gas discharge manifold L51 is equipped with a pneumatic valve V56 (Reactor To Atm Valve) and a one-way valve CV8 (pressure relief valve). When the equipment is not in operation, the purge gas passes through the reaction chamber, then through the pneumatic valve V56 and the one-way valve CV8, and directly to the exhaust gas emission system, ensuring that the chamber is always in a state of overall purging. The second exhaust manifold L52 is equipped with pneumatic valves V51 (PM Leak Check), V52 (MO Leak Check), and V53 (Gas Box Leak Check) for automatic leak detection of the gas system. The third exhaust manifold L53 is equipped with a pneumatic valve V54 (Negative Pressure Valve) and a negative pressure pump. This ensures negative pressure in the pipeline between the chamber and the vacuum pump during maintenance, preventing residual gas from escaping into the atmosphere and shortening the recovery time after equipment maintenance.

[0124] The exhaust gas discharge line L5 is sequentially equipped with a pneumatic ball valve EPV1 (near the reaction chamber), a manual valve MV7, a filter (used to filter particulate matter generated by the reaction in the chamber, reducing the burden of exhaust gas treatment and increasing the service life of the vacuum pump), a manual valve MV7, a pneumatic ball valve EPV2, a butterfly valve BFV, a manual valve MV9, a vacuum pump, a manual valve MV10, and a vacuum gauge PT3. One end of the first exhaust gas discharge manifold L51 is connected to the upstream side of the pneumatic ball valve EPV1, and the other end is connected to the downstream side of the manual valve MV10. One end of the third exhaust gas discharge manifold L53 is connected to the upstream side of the pneumatic ball valve EPV2, and the other end is connected to the downstream side of the manual valve MV10. One end of the second exhaust gas discharge manifold L52 is connected to the downstream side of the pneumatic ball valve EPV1, and the other end is connected to the vacuum gauge PT2. The reaction pressure within the reaction chamber is controlled by a vacuum pump and a butterfly valve (BFV) on the exhaust gas discharge line L5. Manual valves are installed upstream and downstream of the filter and vacuum pump for easy maintenance and replacement without affecting other pipelines. Two pneumatic ball valves, EPV1 and EPV2, are installed on the exhaust gas discharge line L5 to automatically control the isolation between the exhaust gas and the chamber.

[0125] Gas1 is the purge gas (such as Ar or N2), Gas2 is the carrier gas (H2), Gas3-6 are the actual process gases, Source 1 and Source 2 are liquid gas sources, and Gas7 is the purge gas (such as N2). In one embodiment, the sidewall of the housing is connected to the gas supply system (to introduce purge gas into the reaction chamber) via a pipeline. In one embodiment, a (vacuum) pressure gauge PT1 is installed on the housing to detect the real-time pressure inside the reaction chamber.

[0126] The gas supply system has 7 gas pipelines (Gas1-Gas7) and 2 liquid gas source pipelines (MO source 1 and MO source 2). Each gas pipeline is equipped with a digital mass flow controller (e.g., Figure 1 The mass flow controller (represented by the combination of M and serial number) is used to precisely control the flow rate and mass of process gases. In this embodiment, a pneumatic valve (such as...) Figure 1 The system (represented by the combination of "V" and "serial number") is controlled in real-time by a host computer, facilitating editing and control and enabling automated processes. Each gas pipeline can be purged under host computer control. Automatic leak detection is possible for the chamber and each gas path. When the chamber is open for maintenance, a purging channel is provided for the chamber's own pipelines, allowing for purging of the chamber itself during maintenance. During maintenance, residual special gases may remain in the pipeline between the chamber and the vacuum pump. This gas supply system is equipped with a negative pressure pump, which maintains negative pressure in this section of the pipeline during maintenance, reducing the release of special gases into the workspace and protecting personnel safety. Editable functionality is provided, allowing users to edit the process control program. This embodiment uses 7 gas pipelines and 2 liquid gas source pipelines. In other embodiments, the number of gas pipelines and liquid gas source pipelines is not limited and can be added according to actual needs. Vacuum pressure gauge PT1 is used to detect the real-time pressure inside the reaction chamber; PT2 is used to record the real-time pressure during a leak check; and PT3 is used to detect the real-time pressure at the exhaust gas end.

[0127] On the gas pipeline of Gas3-6, pneumatic valves V22 / V24 / V26 / V28 are configured to be normally closed, and V23 / V25 / V27 / V29 are configured to be normally open.

[0128] As Figure 1 Variations of the implementation method are as follows Figure 2 As shown, with Figure 1 The difference lies in omitting the gas pipeline of Gas7 and the fourth pipeline L4.

[0129] The above embodiments are only for illustrating the technical concept and features of this application, and are intended to enable those skilled in the art to understand the content of this application and implement it accordingly. They should not be used to limit the scope of protection of this application. All equivalent changes or modifications made in accordance with the spirit and essence of this application should be included within the scope of protection of this application.

Claims

1. A gas supply system for epitaxial devices, characterized in that, have: First gas pipeline, second gas pipeline, third gas pipeline, fourth gas pipeline, fifth gas pipeline, sixth gas pipeline, first pipeline, second pipeline, and third pipeline. One end of the first pipeline is connected to the epitaxial device, and the other end is connected to the third, fourth, fifth, and sixth gas pipelines, the first MO source, and the second MO source, respectively. One end of the second pipeline is connected to the epitaxial device, and the other end is connected to the second gas pipeline. One end of the third pipeline is connected to the epitaxial device, and the other end is connected to the first gas pipeline. The first gas line is supplied with purge gas, the second gas line is supplied with carrier gas, and at least one of the third to sixth gas lines is used to supply process gas.

2. The gas supply system for epitaxial equipment as described in claim 1, characterized in that, It also includes a fourth pipeline, one end of which is connected to the epitaxial device and the other end is connected to the third pipeline, through which purge gas is introduced into the epitaxial device.

3. The gas supply system for epitaxial devices as described in claim 1, characterized in that, The first gas pipeline is connected to the second gas pipeline via the eleventh pneumatic valve.

4. The gas supply system for epitaxial devices as described in claim 3, characterized in that, The first gas pipeline is connected to the third gas pipeline via the seventh pneumatic valve; The first gas pipeline is connected to the fourth gas pipeline via the eighth pneumatic valve; The first gas pipeline is connected to the fifth gas pipeline via the ninth pneumatic valve; The first gas pipeline is connected to the sixth gas pipeline via the tenth pneumatic valve.

5. The gas supply system for epitaxial devices as described in claim 1, characterized in that, The second gas pipeline is connected to the first MO source via the first check valve and to the second MO source via the second check valve.

6. The gas supply system for epitaxial equipment as described in claim 1, characterized in that, It also includes a seventh gas pipeline, which is connected to the first gas pipeline, with the connection point located upstream of the first pneumatic valve. The seventh gas pipeline is also connected to the third pipeline, through which gas is introduced into the extended equipment. Manual valves are installed on the inlet side of the first gas pipeline, the second gas pipeline, the third gas pipeline, the fourth gas pipeline, the fifth gas pipeline, the sixth gas pipeline and the seventh gas pipeline.

7. The gas supply system for an epitaxial device as described in any one of claims 1-6, characterized in that, It also includes a fifth pipeline, which is connected to an extensional device for discharging gas.

8. The gas supply system for epitaxial equipment as described in claim 7, characterized in that, The fifth pipeline includes a first exhaust gas exhaust manifold, a second exhaust gas exhaust manifold, and a third exhaust gas exhaust manifold. One side of the first exhaust gas discharge manifold is connected to the upstream of the first pneumatic ball valve configured on the fifth pipeline. One side of the second exhaust gas discharge manifold is connected downstream of the first pneumatic ball valve on the fifth pipeline. One side of the third exhaust gas discharge manifold is connected to the upstream of the second pneumatic ball valve configured on the fifth pipeline.

9. A silicon carbide epitaxial device, characterized in that, It has a housing, on which a spray device is provided, the spray device being connected to the gas supply system as described in any one of claims 1-8, and the bottom side of the housing being connected to an exhaust gas discharge pipe via a pipeline.

10. The silicon carbide epitaxial apparatus as described in claim 9, characterized in that, It has a housing on which a pressure gauge is connected, the pressure gauge being used to detect the pressure in the reaction chamber.

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