Graphite piece maintenance control method and device, electronic equipment and storage medium

Abstract

The invention discloses a graphite piece maintenance control method and device, electronic equipment and a storage medium, and relates to the technical field of semiconductors, and the method comprises the steps: determining maintenance condition information according to the type of a graphite piece; determining processing formula information corresponding to the current batch, wherein the processing formula information corresponds to graphite piece influence information; predicting predicted graphite piece state information of the graphite pieces after the current batch is processed based on the processing formula information according to the graphite piece influence information; and according to the predicted graphite piece state information and the maintenance condition information, carrying out maintenance control on the graphite piece to obtain a maintenance control result. Before actual measurement, the state of the graphite piece is predicted after machining is completed, maintenance control is conducted on the graphite piece, and the problem that maintenance of the graphite piece is delayed is solved. And the state of the graphite piece is predicted through the processing formula information, so that the accuracy and rationality of the maintenance opportunity of the graphite piece can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a method, apparatus, electronic device, and storage medium for maintaining and controlling graphite components. Background Technology

[0002] Graphite components are the core consumables and load-bearing parts inside the reaction chamber, and their stability is a necessary condition for the epitaxial equipment to achieve high-quality epitaxial layer growth. When the graphite-supported wafer is processed in the epitaxial equipment, a SiC film is deposited or grown. If the deposited SiC film is too thick, internal stress will be generated in the film. This stress can cause the coating to peel off, flake, or develop microcracks. Detached SiC particles may fall onto the wafer undergoing epitaxial processing, forming fatal surface defects.

[0003] In FAB (referring to a specialized factory that produces semiconductor chips), graphite components are generally managed. The thickness of the graphite components is accumulated based on the results of the Lot's measurement of the epitaxial film layer. When the film thickness exceeds the set value, the graphite components are maintained or replaced.

[0004] However, this management method has a delay; for example, other lots may be processed during the measurement period, causing a delay in the control point. Furthermore, relying solely on the measured film thickness to control the maintenance timing of graphite parts also suffers from inaccurate maintenance practices and a need for improvement in rationality. Summary of the Invention

[0005] This application provides a graphite component maintenance control method, device, electronic device, and storage medium, which can solve the problem of delayed graphite component maintenance and improve the accuracy and rationality of graphite component maintenance timing.

[0006] In a first aspect, embodiments of this application provide a method for maintaining and controlling graphite components, the method comprising: Determine maintenance conditions based on the type of graphite component; Determine the processing formula information corresponding to the current batch, wherein the processing formula information corresponds to the graphite part influence information; Based on the graphite part influence information, predict the predicted graphite part status information after processing the current batch based on the processing formula information; Based on the predicted graphite component status information and the maintenance condition information, maintenance control is performed on the graphite component to obtain the maintenance control result.

[0007] Secondly, embodiments of this application also provide a graphite component maintenance control device, the device comprising: The first determining module is used to determine maintenance condition information based on the type of graphite component; The second determining module is used to determine the processing formula information corresponding to the current batch, wherein the processing formula information corresponds to the graphite part influence information; The prediction module is used to predict the state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information. The processing module is used to perform maintenance control on the graphite component based on the predicted graphite component status information and the maintenance condition information to obtain the maintenance control result.

[0008] Optionally, in some embodiments of this application, the graphite part influence information includes expected growth film thickness information and film thickness influence coefficient information, and the predicted graphite part state information includes the predicted film thickness information corresponding to the graphite part; The step of predicting the predicted state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information, includes: The predicted film thickness growth information is calculated based on the expected film thickness growth information and the film thickness influence coefficient information; The predicted film thickness information is calculated based on the current cumulative film thickness information of the graphite component and the predicted film thickness growth information.

[0009] Optionally, in some embodiments of this application, the maintenance condition information includes film thickness limitation information, and the maintenance control result includes cleaning result; The step of performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information to obtain a maintenance control result includes: If the predicted film thickness information is greater than or equal to the film thickness limit information, then the graphite part is cleaned to obtain the cleaning result.

[0010] Optionally, in some embodiments of this application, the graphite part influence information includes number of times influence information, and the predicted graphite part state information includes the target number of times the graphite part is processed; The step of predicting the predicted state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information, includes: The number of processing times is calculated based on the number of wafers corresponding to the current batch and the number of wafers processed per batch by the target processing equipment. Calculate the target processing growth number based on the processing number and the impact information of the number; The target number of processing times is obtained based on the current cumulative number of processing times and the target number of processing increases.

[0011] Optionally, in some embodiments of this application, the maintenance condition information includes processing number limit information, and the maintenance control result includes cleaning result; The step of performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information to obtain a maintenance control result includes: If the target number of processing operations is greater than or equal to the processing operation limit information, then the graphite part is cleaned to obtain the cleaning result.

[0012] Optionally, in some embodiments of this application, the maintenance condition information includes cleaning frequency limit information; After obtaining the maintenance control result by performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information, the method further includes: If the maintenance control result includes cleaning result or the maintenance control includes cleaning, then update the cumulative cleaning count corresponding to the graphite part; If the cumulative number of cleanings is greater than or equal to the cleaning count limit, the graphite part is replaced to obtain the graphite part replacement result.

[0013] Optionally, in some embodiments of this application, after obtaining a maintenance control result by performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information, the method further includes: After the current batch is actually processed, if the maintenance control result includes the cleaning result, then the graphite part corresponding to the cleaning result remains unchanged; After the current batch is actually processed, if the maintenance control result does not include the cleaning result, the predicted graphite part status information is adjusted according to the average actual film thickness information corresponding to the current batch to obtain the actual graphite part status information. Another maintenance control result is obtained by performing maintenance control on the graphite component based on the actual graphite component status information and the maintenance condition information; The actual average film thickness information is based on the average film thickness measured from at least one wafer corresponding to the current batch after processing based on the processing formula information.

[0014] Thirdly, embodiments of this application also provide an electronic device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the computer program is executed by the processor, it implements the steps in the graphite component maintenance control method described above.

[0015] Fourthly, embodiments of this application also provide a storage medium, including a computer-readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, it implements the steps in the graphite component maintenance control method described above.

[0016] Fifthly, embodiments of this application also provide a computer program product or computer program, which includes computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform the methods provided in the various optional implementations described in embodiments of this application.

[0017] In summary, the embodiments of this application determine maintenance condition information based on the type of graphite component, determine the processing formula information corresponding to the current batch, the processing formula information corresponds to graphite component impact information, predict the graphite component state information after processing the current batch based on the processing formula information based on the graphite component impact information, and perform maintenance control on the graphite component based on the predicted graphite component state information and maintenance condition information to obtain maintenance control results.

[0018] In this embodiment, the state of the graphite part after processing is predicted before actual measurement (at least before, during and after processing). Based on the maintenance condition information and the predicted state of the graphite part, the maintenance of the graphite part is controlled, so that the maintenance of the graphite part no longer depends on the film thickness measurement results after processing, thus solving the problem of delayed maintenance of graphite parts.

[0019] Furthermore, by predicting the state of graphite parts through processing formula information, the state analysis of graphite parts is no longer limited to the measurement results of film thickness. The embodiments of this application fully consider the influence of processing formula on the state of graphite parts, which helps to improve the accuracy and rationality of the timing of graphite part maintenance. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of a scenario in which a terminal device, as provided in an embodiment of this application, executes the graphite component maintenance control method; Figure 2 This is a flowchart illustrating the graphite component maintenance control method provided in the embodiments of this application; Figure 3This is a framework diagram of the graphite component maintenance control system provided in the embodiments of this application; Figure 4 This is a schematic diagram of the graphite component maintenance control device provided in the embodiments of this application; Figure 5 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application.

[0022] Explanation of the attached table numbers: 101-Terminal equipment; 301-Data maintenance module; 302-Graphite component receiving module; 303-Graphite component loading module; 304-Extended device reservation module; 305-Graphite component counting module; 306-Graphite component counting update module; 307-Graphite component unloading module; 308-Graphite component cleaning module; 401-Acquisition module; 402-Generation module; 403-Query module; 404-Construction module; 501-Processor; 502-Memory; 503-Power supply; 504-Input unit. Detailed Implementation

[0023] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0024] In the description of the embodiments of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first," "second," "third," and "fourth" may explicitly or implicitly include one or more features. In the description of the present invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0025] In this application, the term "exemplary" is used to mean "serving as an example, illustration, or description." Any embodiment described as "exemplary" in this application is not necessarily to be construed as being more preferred or advantageous than other embodiments. The following description is provided to enable any person skilled in the art to make and use the invention. Details are set forth in the following description for purposes of explanation. It should be understood that those skilled in the art will recognize that the invention can be made without using these specific details. In other instances, well-known structures and processes will not be described in detail to avoid obscuring the description of the invention with unnecessary detail. Therefore, the invention is not intended to be limited to the embodiments shown, but is consistent with the broadest scope of the principles and features disclosed in this application.

[0026] This application provides a graphite component maintenance control method, apparatus, electronic device, and computer-readable storage medium. Specifically, this application provides a graphite component maintenance control apparatus suitable for electronic devices, the electronic device including a terminal device, which includes, but is not limited to, an epitaxial furnace.

[0027] For example, please see Figure 1 , Figure 1 This is a schematic diagram illustrating a scenario where a terminal device, according to an embodiment of this application, executes the graphite component maintenance control method. Specifically, the execution process of the terminal device executing the graphite component maintenance control method is as follows: Terminal device 101 determines maintenance condition information based on the type of graphite component, determines the processing formula information corresponding to the current batch, the processing formula information corresponds to graphite component impact information, predicts the graphite component status information after processing the current batch based on the processing formula information based on the graphite component impact information, and performs maintenance control on the graphite component based on the predicted graphite component status information and maintenance condition information to obtain maintenance control results.

[0028] For example, before reaching the actual measurement stage of processing, processing, and post-processing at the terminal equipment, maintenance condition information is first determined based on the type of graphite part, and the impact information of graphite part is determined based on the processing formula information corresponding to the current batch. Then, based on the impact information of graphite part, the state of graphite part after processing is predicted, and the judgment and control of whether the graphite part needs maintenance is made based on the predicted state and maintenance condition information.

[0029] In summary, the embodiments of this application predict the state of the graphite part after processing before actual measurement (at least before, during and after processing, and before measurement after processing), and perform maintenance control on the graphite part based on maintenance condition information and the predicted state of the graphite part. This makes the maintenance of the graphite part no longer dependent on the film thickness measurement results after processing, thus solving the problem of delayed maintenance of graphite parts.

[0030] Furthermore, by predicting the state of graphite parts through processing formula information, the state analysis of graphite parts is no longer limited to the measurement results of film thickness. The embodiments of this application fully consider the influence of processing formula on the state of graphite parts, which helps to improve the accuracy and rationality of the timing of graphite part maintenance.

[0031] The following sections provide detailed descriptions of each example. It should be noted that the order in which the embodiments are described is not intended to limit the priority of the embodiments.

[0032] Please see Figure 2 , Figure 2 This is a flowchart illustrating the graphite component maintenance control method provided in this application. Although the flowchart shows a logical sequence, in some cases, the steps shown or described can be performed in a different order than that shown in the flowchart. Specifically, the specific flow of the graphite component maintenance control method is as follows: S201. Determine maintenance condition information based on the type of graphite component.

[0033] Graphite components are core consumables and load-bearing parts inside the reaction chamber, and their stability is a necessary condition for achieving high-quality epitaxial layer growth in epitaxial equipment. In SiC epitaxial equipment, the graphite substrate plays a triple role as a "heating furnace tray," a "precise temperature field controller," and a "wafer protection tray." Its performance and condition directly determine the success or failure of epitaxial growth. It is the physical bridge connecting the equipment hardware and the process formulation software, and it is also a key consumable that needs to be tracked and managed in the MES system. Its usage frequency, process history, and maintenance status must all be strictly recorded and managed.

[0034] It should be noted that when graphite components are mounted on wafers and processed in epitaxial equipment, SiC films are deposited or grown concurrently. If the deposited SiC film is too thick, internal stress will be generated within the film, which can lead to coating peeling, flaking, or microcracks. Detached SiC particles may fall onto the wafer undergoing epitaxial processing, forming fatal surface defects. This application primarily analyzes and predicts the state of graphite components during processing to achieve maintenance control of the graphite components.

[0035] The type is an attribute of the graphite part, used to distinguish graphite parts with different attributes. It can be understood that different types of graphite parts have different characteristics. For example, in the embodiments of this application, different types of graphite parts correspond to different maintenance conditions.

[0036] The maintenance condition information refers to the maintenance criteria for this type of graphite part. This can be understood as the upper limit of whether the graphite part can be used normally. For example, this maintenance condition information includes upper limits for film thickness and processing cycles.

[0037] It is understood that the embodiments of this application determine the maintenance condition information by the type of graphite component, so that the maintenance condition information matches the attributes of the graphite component, thereby helping to improve the accuracy and rationality of subsequent maintenance control of graphite components based on the maintenance condition information.

[0038] S202. Determine the processing formula information corresponding to the current batch, wherein the processing formula information corresponds to the graphite part influence information.

[0039] The current batch is the Lot to be processed, which is the production batch of wafers and also the quantitative unit of wafers (for example, a full batch Lot usually has 25 wafers).

[0040] The processing formulation information refers to the processes and strategies used to process the wafer. For example, this information may include high-temperature or low-temperature formulations, determined based on the wafer processing requirements. Understandably, high-temperature formulations (such as high-speed growth and high doping) result in greater thermal stress and accelerated graphite evaporation, which can accelerate coating degradation and the porosity of the graphite matrix, increasing the risk of coating peeling. Conversely, low-temperature formulations may result in insufficient temperature, preventing the complete decomposition of reactant gases and leading to the formation of amorphous or unstable silicon-carbon compounds deposited on the graphite component. These deposits have poor adhesion and are more likely to become particulate sources. Therefore, different processing formulations have different effects on graphite components.

[0041] The graphite component impact information is a quantitative representation of the influence of different processing formulations on the graphite component. For example, this impact information includes the impact coefficient corresponding to the processing formulation. In this embodiment, a mapping relationship can be pre-defined between the processing formulation information and the graphite component impact information. This allows for rapid matching of the corresponding graphite component impact information from the mapping relationship when a graphite component state prediction task is received. This mapping relationship can be predefined based on experience, statistics, or requirements.

[0042] It is understood that, by determining the processing formula information of the current batch, the embodiments of this application can predict the state of the graphite parts based on the graphite part influence information corresponding to the processing formula information, thereby improving the accuracy of state prediction.

[0043] S203. Based on the graphite part influence information, predict the predicted graphite part state information after the current batch is processed based on the processing formula information.

[0044] For example, the state of the current batch after processing according to the processing formula information can be predicted based on the graphite component impact information.

[0045] The predicted graphite component status information refers to the predicted state of the graphite component. This predicted status information includes factors used to determine whether the graphite component requires maintenance. For example, the predicted graphite component status information includes the predicted film thickness and the predicted number of times the graphite component has been processed. It is understood that the film thickness and the number of times the graphite component has been used affect its stability. In this embodiment, the film thickness and the number of times the graphite component has been used as the basis for determining whether the graphite component needs maintenance or replacement.

[0046] It is understood that the embodiments of this application can predict the state of the graphite parts after processing in advance by measuring them before actual measurement (at least before, during and after processing). This allows for advance control of the maintenance of the graphite parts without waiting for actual measurement operations and the results after measurement. This reduces the maintenance delay caused by the graphite parts continuing to perform subsequent Lot production tasks, and reduces the problem of reduced yield in subsequent Lot production due to untimely maintenance of the graphite parts.

[0047] S204. Based on the predicted graphite component status information and the maintenance condition information, perform maintenance control on the graphite component to obtain the maintenance control result.

[0048] It is understandable that maintenance condition information is the basis for maintenance control, and the predicted graphite component status information is the result of status prediction. By comparing the predicted graphite component status information with the maintenance condition information, it can be determined whether the graphite component needs maintenance, and then maintenance operations can be controlled to obtain the maintenance control result.

[0049] Maintenance control includes both actual maintenance operations and non-maintenance operations when no maintenance is required; that is, it includes at least two scenarios: actual maintenance and no maintenance. Correspondingly, maintenance control results include at least the state result after actual maintenance and the state retention result when no maintenance was performed.

[0050] In summary, the embodiments of this application predict the state of the graphite part after processing before actual measurement (at least before, during and after processing, and before measurement after processing), and perform maintenance control on the graphite part based on maintenance condition information and the predicted state of the graphite part. This makes the maintenance of the graphite part no longer dependent on the film thickness measurement results after processing, thus solving the problem of delayed maintenance of graphite parts.

[0051] Furthermore, by predicting the state of graphite parts through processing formula information, the state analysis of graphite parts is no longer limited to the measurement results of film thickness. The embodiments of this application fully consider the influence of processing formula on the state of graphite parts, which helps to improve the accuracy and rationality of the timing of graphite part maintenance.

[0052] In this embodiment of the application, the graphite part influence information includes the expected growth film thickness information and film thickness influence coefficient information corresponding to the processing formula information. Correspondingly, the predicted graphite part state information includes the predicted film thickness information corresponding to the graphite part. That is, optionally, in some embodiments of this application, the step "predicting the predicted graphite part state information after processing the current batch based on the processing formula information according to the graphite part influence information" includes: The predicted film thickness growth information is calculated based on the expected film thickness growth information and the film thickness influence coefficient information; The predicted film thickness information is calculated based on the current cumulative film thickness information of the graphite component and the predicted film thickness growth information.

[0053] The expected growth film thickness information refers to the film thickness that is expected to increase after processing according to the processing formulation information. Different processing formulation information corresponds to different expected growth film thickness information. For example, the expected growth film thickness information includes, but is not limited to, 5um, 10um, or 15um.

[0054] The film thickness influence coefficient is a gain coefficient that measures the impact of film thickness growth. It is used to optimize the expected film thickness growth. For example, this coefficient may include, but is not limited to, values ​​of 0.2, 0.3, 0.4, 1, or values ​​exceeding 1. A more reasonable growth is calculated by multiplying the expected film thickness growth information by the film thickness influence coefficient, thus obtaining the predicted film thickness growth information. This film thickness influence coefficient adapts to changes in processing conditions such as temperature, pressure, and processing time based on the processing formula.

[0055] Subsequently, the predicted film thickness information is obtained by summing the predicted film thickness growth information with the current cumulative film thickness information.

[0056] Among them, the current cumulative film thickness information is the film thickness accumulated through prediction or measurement, which indicates the current film thickness status of the graphite part.

[0057] Correspondingly, the maintenance condition information includes film thickness limitation information, and the maintenance of the graphite part includes cleaning, that is, the maintenance control result includes the cleaning result. Optionally, in some embodiments of this application, the step "to perform maintenance control on the graphite part according to the predicted graphite part state information and the maintenance condition information to obtain a maintenance control result" includes: If the predicted film thickness information is greater than or equal to the film thickness limit information, then the graphite part is cleaned to obtain the cleaning result.

[0058] Understandably, after cleaning the graphite parts, their state or parameters are restored to their initial settings, such as zero film thickness and zero processing cycles. Correspondingly, the cleaning cycle is incremented by one.

[0059] Understandably, predicting the film thickness of graphite parts after processing based on processing formula information allows for advance prediction of the film thickness, eliminating the need to wait for actual measurement operations (which are typically performed some time after processing), thus improving the efficiency of obtaining the graphite film thickness. Furthermore, by using film thickness limit information and the predicted graphite film thickness for maintenance control, maintenance of graphite parts can be controlled in advance, resolving the issue of delayed maintenance.

[0060] In this application embodiment, the graphite part influence information includes the number of times influence information. Correspondingly, the predicted graphite part state information includes the target number of times the graphite part is processed. That is, in some embodiments of this application, the step "predicting the predicted graphite part state information after processing the current batch based on the processing formula information according to the graphite part influence information" includes: The number of processing times is calculated based on the number of wafers corresponding to the processing batch and the number of wafers processed per batch by the target processing equipment. Calculate the target processing growth number based on the processing number and the impact information of the number; The target number of processing times is obtained based on the current cumulative number of processing times and the target number of processing increases.

[0061] The term "wafer quantity" refers to the number of wafers to be processed in the current processing batch, such as 6 wafers, 10 wafers, etc. The term "number of wafers processed per batch" refers to the number of wafers that the target processing equipment can process in a single batch, such as 1 wafer, 6 wafers, 8 wafers, etc. The term "target processing equipment" includes equipment for processing wafers, such as the epitaxial furnace in the embodiments of this application.

[0062] It is understandable that the number of processing cycles required for that number of wafers can be obtained by quotienting the number of wafers to be processed in a single batch.

[0063] The "number of processing cycles" information is a gain information on the number of processing cycles used to optimize the number of processing cycles. For example, this information may include, but is not limited to, 0.2, 0.3, 0.4, 1, or 1.3. The target processing growth number is obtained by multiplying the current cumulative processing number by the number of processing cycles and the target growth number. The target processing number is then obtained by summing the current cumulative processing number and the target growth number. This "number of processing cycles" information adapts to changes in processing conditions such as temperature, pressure, and duration based on the processing formula information.

[0064] Accordingly, in the embodiments of this application, the maintenance condition information includes processing number limit information, and the maintenance of the graphite part includes cleaning, that is, the maintenance control result includes the cleaning result. Optionally, in some embodiments of this application, the step "to perform maintenance control on the graphite part according to the predicted graphite part state information and the maintenance condition information to obtain the maintenance control result" includes: If the target number of processing operations is greater than or equal to the processing operation limit information, then the graphite part is cleaned to obtain the cleaning result.

[0065] Similarly, after the graphite parts are cleaned off the machine, their state or parameters are restored to their initial settings, for example, the film thickness and number of processing cycles are zero. The cleaning cycle is then incremented by one.

[0066] The following example illustrates the technical effectiveness of graphite part maintenance control based on predicted film thickness information and target processing number: For a graphite part with a film thickness limit of 600µm, taking Lot's normal processing formula as an example, the expected film thickness increase per cycle is 15µm. The film thickness influence coefficient for high-frequency formulas is 1.5, and the cycle influence coefficient is 1.5; the film thickness influence coefficient for low-temperature formulas is 0.3, and the cycle influence coefficient is 0.3. Traditional periodic mode: The graphite parts need maintenance after ROUNDUP (600 / 15) = 40 processing cycles; The graphite component maintenance and control method based on the embodiments of this application states that if 3 / 4 of the components use the normal formula and 1 / 4 use the high-temperature formula, then theoretically, after 27 processing cycles with the normal formula and 9 processing cycles with the high-temperature formula, the graphite components need to be maintained (a total of 36 processing cycles). In contrast, the traditional periodic maintenance mode requires maintenance only after 40 processing cycles, with the last 4 cycles being risky due to product loss. Therefore, the graphite component maintenance and control method proposed in the embodiments of this application can reduce the epitaxial wafer defect rate caused by graphite components and reduce the number of unplanned downtimes of the equipment. If 3 / 4 of the graphite parts use the normal formula and 1 / 4 use the low-temperature formula, then theoretically, the graphite parts need to be maintained after 36 processing cycles with the normal formula and 12 processing cycles with the low-temperature formula, for a total of 48 processing cycles. However, the traditional periodic maintenance mode starts maintenance after 40 processing cycles, which reduces the number of processing cycles by 8. Therefore, the graphite part maintenance control method proposed in this application can reduce the number of maintenance cycles and extend the service life of the graphite parts.

[0067] In this embodiment of the application, a cleaning frequency limit information for the graphite component is also provided. This cleaning frequency limit information is used to control whether the graphite component can be cleaned or needs to be replaced. That is, optionally, in some embodiments of this application, the maintenance condition information includes the cleaning frequency limit information. After the step "to perform maintenance control on the graphite component according to the predicted graphite component status information and the maintenance condition information to obtain the maintenance control result", the method further includes: If the maintenance control result includes cleaning result or the maintenance control includes cleaning, then update the cumulative cleaning count corresponding to the graphite part; If the cumulative number of cleanings is greater than or equal to the cleaning count limit, the graphite part is replaced to obtain the graphite part replacement result.

[0068] Understandably, whether the graphite part cleaning is controlled based on predicted film thickness information or based on the target number of processing operations, the number of cleaning operations is accumulated after each cleaning. When the accumulated number of cleaning operations reaches the cleaning operation limit, manual intervention is required, such as replacing the graphite part or detaining the graphite part for engineers to handle.

[0069] In this embodiment of the application, after processing the current batch based on the processing formula information, it can be determined whether the graphite part has been recently cleaned. If so, the actual film thickness measurement task is skipped; if it has not been recently cleaned, the actual film thickness is measured, and the film thickness data of the graphite part is accumulated using this actual film thickness to control the maintenance of the graphite part. That is, optionally, in some embodiments of this application, after the step "to perform maintenance control on the graphite part according to the predicted graphite part status information and the maintenance condition information to obtain the maintenance control result", the method further includes: After the current batch is actually processed, if the maintenance control result includes the cleaning result, then the graphite part corresponding to the cleaning result remains unchanged; After the current batch is actually processed, if the maintenance control result does not include the cleaning result, the predicted graphite part status information is adjusted according to the average actual film thickness information corresponding to the current batch to obtain the actual graphite part status information. Another maintenance control result is obtained by performing maintenance control on the graphite component based on the actual graphite component status information and the maintenance condition information; The actual average film thickness information is based on the average film thickness measured from at least one wafer corresponding to the current batch after processing based on the processing formula information.

[0070] Understandably, if the maintenance control result based on the predicted state information of the graphite parts is a cleaning result, it indicates that cleaning has recently occurred, and it is basically certain that cleaning does not need to be repeated after one processing cycle. If the maintenance control result is not a cleaning result, it indicates that cleaning has not recently occurred, and the actual film thickness measurement task can be carried out, thereby controlling the cleaning and maintenance of the graphite parts.

[0071] It is understandable that the same current batch includes multiple wafers. Therefore, the final film thickness of the graphite part for the current batch can be represented by the average of the film thicknesses produced by the multiple wafers for the graphite part.

[0072] Understandably, by controlling the actual film thickness after processing, the accuracy and rationality of maintenance control for graphite parts can be further improved.

[0073] In summary, the embodiments of this application predict the state of the graphite part after processing before actual measurement (at least before, during and after processing, and before measurement after processing), and perform maintenance control on the graphite part based on maintenance condition information and the predicted state of the graphite part. This makes the maintenance of the graphite part no longer dependent on the film thickness measurement results after processing, thus solving the problem of delayed maintenance of graphite parts.

[0074] Furthermore, by predicting the state of graphite parts through processing formula information, the state analysis of graphite parts is no longer limited to the measurement results of film thickness. The embodiments of this application fully consider the influence of processing formula on the state of graphite parts, which helps to improve the accuracy and rationality of the timing of graphite part maintenance.

[0075] It is understood that the graphite component maintenance control method of this application embodiment is applicable to MES (Manufacturing Execution System). By monitoring the production process in real time, managing manufacturing data, and optimizing production plans, it improves equipment utilization and production efficiency. The MES system, through data exchange with various equipment and systems on the production line, achieves the collection, analysis, and real-time monitoring of production data, helping production managers make timely decisions, optimize the production process, and improve production efficiency and product quality.

[0076] To better understand the graphite component maintenance control method of this application embodiment, the following description will focus on the system level. For example, Figure 3 This is a framework diagram of the graphite component maintenance control system provided in this application embodiment. The meanings of the terms used are the same as in the graphite component maintenance control method described above. Specific implementation details can be found in the description of the method embodiment. Specifically, the graphite component maintenance control system includes: a data maintenance module 301, a graphite component receiving module 302, a graphite component loading module 303, an extension device reservation module 304, a graphite component counting module 305, a graphite component counting update module 306, a graphite component unloading module 307, and a graphite component cleaning module 308.

[0077] The data maintenance module 301 performs the following steps: S3011. Configure different epitaxial devices and the number of wafers processed by each epitaxial device in one production run in the MES. For example, the number of wafers processed in a single production run of epitaxial equipment EPI01, EPI02, and EPI03 is 6.

[0078] S3012. Configure the processing formula information supported by different epitaxial devices in the MES, as well as the expected film thickness information THK, film thickness influence coefficient information Factor_THK, and wafer number influence coefficient using the processing formula information (the number of processing times is obtained by the number of wafers, which actually corresponds to the number of processing times influence information). For example, the processing formula information is EPI_SiC_MOS_6um_10mohm_V1, the available epitaxial equipment is EPI01 and EPI02, the expected growth film thickness information THK is 6μm, the film thickness influence coefficient information Factor_THK is 1, and the number of times influence information Factor_Count is 1. For example, the processing formula information is EPI_SiC_MOS_10um_20mohm_V1, the available epitaxial equipment is EPI01 and EPI02, the expected growth film thickness information THK is 10μm, the film thickness influence coefficient information Factor_THK is 1, and the number of times influence information Factor_Count is 1. For example, the processing formula information is EPI_SiC_MOS_15um_15mohm_V1, the available epitaxial equipment is EPI01 and EPI02, the expected growth film thickness information THK is 15μm, the film thickness influence coefficient information Factor_THK is 1, and the number of times influence information Factor_Count is 1. For example, the processing formula information is EPI_SiC_MOS_15um_10mohm_V1, the available epitaxial equipment is EPI01 and EPI02, the expected growth film thickness information THK is 15μm, the film thickness influence coefficient information Factor_THK is 1.5, and the number of times influence information Factor_Count is 1.5; For example, the processing formula information is EPI_SiC_MOS_15um_20mohm_V1, the available epitaxial devices are EPI01 and EPI02, the expected growth film thickness information THK is 15μm, the film thickness influence coefficient information Factor_THK is 0.3, and the number of times influence information Factor_Count is 0.3.

[0079] S3013. Configure the type of graphite component in MES, and set the equipment group that can use the type of graphite component, film thickness limit information THK Limit, processing count limit information Process Count Limit, and cleaning count limit information CleanCount Limit; For example, if the graphite part type is GPC01, the equipment groups that can use this type of graphite part are EPI01 and EPI02, the film thickness limit information THK Limit is 600μm, the processing count limit information Process Count Limit is 60 times, and the cleaning count limit information Clean Count Limit is 13 times.

[0080] For example, if the graphite part type is GPC02, the equipment groups that can use this type of graphite part are EPI03 and EPI04. The film thickness limit information THK Limit is 700μm, the processing count limit information Process Count Limit is 70 times, and the cleaning count limit information Clean Count Limit is 12 times.

[0081] S3014. Configure the product's process flow in the MES and set the process station associated with the film thickness measurement station.

[0082] For example, the process station associated with film thickness measurement station 200.500 is 200.200.

[0083] The graphite component receiving module 302 performs the following steps: S3021. After receiving the graphite part, create the graphite part in the MES system, associate the graphite part category, initialize the current cumulative film thickness information THK Total, the current cumulative processing count Total, and the cumulative cleaning count CleanCount to 0, and set the in-situ cleaning flag Need Clean Flag to N.

[0084] For example, after receiving graphite parts GP001, GP002, and GP003, graphite parts GP001, GP002, and GP003 are created in the MES system, and associated with the corresponding graphite part categories GPC01, GPC02, and GPC02 respectively. The current cumulative film thickness information THKTotal, the current cumulative processing count Total, and the cumulative cleaning count are all initialized to 0, and the in-situ cleaning flag Need Clean Flag is set to N.

[0085] Taking the pre-loading of graphite component GP001 into epitaxial device EPI01 as an example, the graphite component loading module 303 performs the following steps: S3031. Based on Graphite Parts ID = GP001, determine the following information about Graphite Parts GP001: Graphite Parts Category = GPC01, Current Cumulative Film Thickness THK Total = 0, Current Cumulative Process Count Total = 0, Cumulative Clean Count Total = 0, In-situ Cleaning Flag = N; S3032. Based on the graphite part type Graphite Parts Category = GPC01, determine the associated equipment group EQP List = [EPI01, EPI02], film thickness limit information THK Limit = 600, processing count limit information Process Count Limit = 60, and cleaning count limit information Clean Count Limit = 13; S3033, the current cumulative film thickness information THK Total = 0 for graphite component GP001 does not exceed the film thickness limit information THK Limit = 600, so proceed to the next step; S3034, the current cumulative processing count (Process Count Total = 0) for graphite part GP001 has not exceeded the processing count limit (Process Count Limit = 60), so proceed to the next step; S3035, the in-situ cleaning flag of graphite part GP001 is N, indicating that graphite part GP001 can be loaded into equipment EPI01 to perform the step of installing the graphite part into the epitaxial device.

[0086] Taking the current batch Lot01.00 reaching the process station reservation for epitaxial equipment EPI01 as an example, the epitaxial equipment reservation module 304 performs the following steps: S3041. Obtain the information of graphite part GP001 in the reserved epitaxial device EPI01 of Lot01.00, as follows: Graphite Parts Category = GPC01, Current cumulative film thickness information THK Total = 0, Current cumulative processing count Total = 0; S3042. The graphite part on the scheduled epitaxial device belongs to the graphite part type GPC01. Based on this graphite part type Graphite Parts Category = GPC01, determine the associated equipment group EQP List = [EPI01, EPI02], film thickness limit information THK Limit = 600, and processing count limit information Process Count Limit = 60; S3043. Determine that the processing formula information to be used by Lot01.00 on the epitaxial equipment EPI01 is EPI_SiC_MOS_15um_20mohm_V1, and its corresponding expected growth film thickness information THK = 15um, film thickness influence coefficient information Factor_THK = 0.3, and number of times influence coefficient Factor_Count = 0.3; S3044. The epitaxial equipment EPI01 has not yet reserved a Lot, so the reserved Lot information of the epitaxial equipment is empty. Therefore, it is not necessary to calculate the predicted film thickness growth information and the target processing growth number corresponding to the reserved Lot information. Understandably, if the epitaxial equipment EPI01 has already reserved a Lot at this time, the predicted film thickness information also needs to include the predicted film thickness growth information calculated for the reserved Lot and the target processing growth number.

[0087] S3045, Graphite part GP001 current cumulative film thickness information (THK Total = 0) + estimated increase in film thickness of reserved Lot (=0) < film thickness limit information (THK Limit = 600); S3046, Graphite part GP001 current cumulative processing count (Process Count Total = 0) + estimated increase in processing count of reserved Lot (= 0) < Processing count limit information (Process Count Limit = 60); S3047. Lot01.00 can be scheduled for processing on epitaxial equipment EPI01. Subsequently, an instruction can be received to schedule the current batch of Lot01.00 for processing on epitaxial equipment EPI01.

[0088] The graphite component counting module 305 performs the following steps: 3051. Determine the number of wafers that equipment EPI01 can process at one time: Wafer Count Per Run = 6; where, taking Lot01.00 as an example, the number of wafers Wafer Count = 6; S3052, the information for graphite part GP001 is as follows: Graphite Parts Category = GPC01, Current Cumulative Film Thickness THK Total = 0, Current Cumulative Process Count Total = 0, Cumulative Clean Count Total = 0, In-situ Cleaning Flag = N; S3053. Based on the graphite part type Graphite Parts Category = GPC01, determine the associated equipment group EQP List = [EPI01, EPI02], film thickness limit information THK Limit = 600, and processing count limit information ProcessCount Limit = 60; S3054. Determine that the equipment formulation used by the current batch Lot01.00 on the epitaxial equipment EPI01 is EPI_SiC_MOS_15um_20mohm_V1, and use the processing formulation information to determine the expected growth film thickness information THK = 15 um, film thickness influence coefficient information Factor_THK = 0.3, and number of times influence coefficient Factor_Count = 0.3; S3055. Update the current cumulative film thickness information of graphite part GP001 according to the predicted data: THK Total = THKTotal + THK * Factor_THK = 0 + 15 * 0.3 = 4.50; S3056, Update the current cumulative processing count of graphite part GP001: Process Count Total = ProcessCount Total + ROUNDUP(Wafer Count / Wafer Count Per Run) * Factor_Count = 0 + ROUNDUP (6 / 6) * 0.3 = 0.30; S3057. From the above calculations, we know that 4.5 < 600, that is, THK Total. <THK Limit; S3058. From the above calculation, we know that 0.3 < 60, that is, Process Count Total. <Process CountLimit。

[0089] At this point, according to S3057 and S3058, it is determined that no cleaning of the graphite parts is required.

[0090] The graphite component count update module 306 performs the following steps: S3061. Determine that the process station associated with the epitaxial film measurement station 200.500 of the current batch Lot01.00 is 200.200; That is, after process station 200.200 is completed, epitaxial film thickness measurement will begin after a period of time.

[0091] S3062. Obtain the measurement results of all measurement wafers at the current Lot01.00 epitaxial film measurement station (i.e., the measurement results of the growth film thickness of graphite parts after each wafer processing), and calculate the average value Ave(AllMeasWaferTHK) of all wafer measurement results. For example, Ave(AllMeasWaferTHK) = 14.90, which is the actual average film thickness information. S3063. Determine the information of graphite part GP001 as follows: Graphite Parts Category = GPC01, Graphite Parts Total Thickness THK = 4.50; S3064. Based on the graphite part type Graphite Parts Category = GPC01, determine the associated device group EQP List = [EPI01, EPI02] and the film thickness limit information THK Limit = 600; S3065, Determine the formulation EPI_SiC_MOS_15um_20mohm_V1 used in Lot01.00 at associated process station 200.200, with the expected increase in film thickness information THK = THK * Factor_THK = 15 * 0.3 = 4.50, and the film thickness influence coefficient information Factor_THK = 0.3; S3066. Update the current cumulative film thickness information THK Total of the graphite part according to the actual measurement results (actual average film thickness information), and update it to: THK Total = THK Total - THK * Factor_THK + Ave(AllMeasWaferTHK) * Factor_THK = 4.5-4.5+14.9*0.3=4.47; That is, subtract the film thickness accumulated during the prediction stage, and obtain the updated current cumulative film thickness information by adding the current cumulative film thickness information before prediction with the average actual film thickness information.

[0092] S3067. From the above calculations, we know that 4.47 < 600, that is, THK Total. <THK Limit。

[0093] As indicated by S3067, it is still not necessary to clean the graphite parts.

[0094] Understandably, this graphite part can be used for processing in subsequent batches. Furthermore, the calculation of film thickness and processing cycles for other batches can be understood by referring to the steps described above, and will not be repeated here.

[0095] When a graphite part undergoes multiple processing and uses, including the prediction stage and the measurement status accumulation stage after actual processing, cleaning is triggered if the graphite part reaches the cleaning conditions. Before cleaning, an unloading operation is performed. The steps executed by the graphite part unloading module 307 are as follows: After S3071 and Lot01.00 leave the epitaxial equipment, the epitaxial equipment is in a non-processing state. Therefore, the graphite part GP001 is successfully removed from the machine, and the association between the graphite part GP001 and the epitaxial equipment EPI01 is canceled.

[0096] The graphite component cleaning module 308 performs the following steps: S3081. If the cumulative number of cleanings of graphite part GP001 is less than the cleaning count limit information, and the in-situ cleaning flag Need Clean Flag = Y, then clean the graphite part, and after cleaning, set the in-situ cleaning flag Need Clean Flag to N, the cumulative number of cleanings + 1, the current cumulative film thickness information THK Total to 0, and the current cumulative processing count Process Count Total to 0.

[0097] It should be noted that the film thickness prediction and target processing number calculation in this application embodiment are for determining whether the set film thickness limit or processing number limit has been reached. This is used to determine in advance, before the measurement stage, whether the graphite part needs to be cleaned or detained. It does not directly add the film thickness information or processing number calculated in the prediction stage to the system parameters. That is, these accumulated parameters are not used as the basis for accumulation in the subsequent actual measurement stage. It is understood that only the results of the actual measurement stage will serve as the basis for the accumulation of the next film thickness or processing number. In other words, the actually measured film thickness and the statistically recorded processing number will serve as the basis for predicting subsequent processing batches and as the basis for the accumulation of subsequent actual measurements.

[0098] In summary, the embodiments of this application, through the design of the data maintenance module 301, graphite component receiving module 302, graphite component loading module 303, epitaxial device reservation module 304, graphite component counting module 305, graphite component counting update module 306, graphite component unloading module 307, and graphite component cleaning module 308, realize graphite component loading control, current batch epitaxial device reservation, graphite component status prediction, and graphite component actual status analysis, and control the maintenance and cleaning of graphite components, thereby improving the accuracy and rationality of graphite component maintenance timing.

[0099] To facilitate better implementation of the graphite component maintenance control method of this application, this application also provides a graphite component maintenance control device based on the above-described graphite component maintenance control method. The meanings of the terms used are the same as in the above-described graphite component maintenance control method, and specific implementation details can be found in the description of the method embodiments.

[0100] Please see Figure 4 , Figure 4 This is a schematic diagram of the structure of the graphite component maintenance control device provided in the embodiment of this application. Specifically, the graphite component maintenance control device can be as follows: The first determining module 401 is used to determine maintenance condition information based on the type of graphite component; The second determining module 402 is used to determine the processing formula information corresponding to the current batch, wherein the processing formula information corresponds to the graphite part influence information; Prediction module 403 is used to predict the state information of the graphite part after the current batch is processed based on the processing formula information, according to the graphite part influence information; The processing module 404 is used to perform maintenance control on the graphite component based on the predicted graphite component status information and the maintenance condition information to obtain a maintenance control result.

[0101] Optionally, in some embodiments of this application, the graphite part influence information includes expected growth film thickness information and film thickness influence coefficient information, and the predicted graphite part state information includes the predicted film thickness information corresponding to the graphite part; The step of predicting the predicted state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information, includes: The predicted film thickness growth information is calculated based on the expected film thickness growth information and the film thickness influence coefficient information; The predicted film thickness information is calculated based on the current cumulative film thickness information of the graphite component and the predicted film thickness growth information.

[0102] Optionally, in some embodiments of this application, the maintenance condition information includes film thickness limitation information, and the maintenance control result includes cleaning result; The step of performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information to obtain a maintenance control result includes: If the predicted film thickness information is greater than or equal to the film thickness limit information, then the graphite part is cleaned to obtain the cleaning result.

[0103] Optionally, in some embodiments of this application, the graphite part influence information includes number of times influence information, and the predicted graphite part state information includes the target number of times the graphite part is processed; The step of predicting the predicted state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information, includes: The number of processing times is calculated based on the number of wafers corresponding to the current batch and the number of wafers processed per batch by the target processing equipment. Calculate the target processing growth number based on the processing number and the impact information of the number; The target number of processing times is obtained based on the current cumulative number of processing times and the target number of processing increases.

[0104] Optionally, in some embodiments of this application, the maintenance condition information includes processing number limit information, and the maintenance control result includes cleaning result; The step of performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information to obtain a maintenance control result includes: If the target number of processing operations is greater than or equal to the processing operation limit information, then the graphite part is cleaned to obtain the cleaning result.

[0105] Optionally, in some embodiments of this application, the maintenance condition information includes cleaning frequency limit information; After obtaining the maintenance control result by performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information, the method further includes: If the maintenance control result includes cleaning result or the maintenance control includes cleaning, then update the cumulative cleaning count corresponding to the graphite part; If the cumulative number of cleanings is greater than or equal to the cleaning count limit, the graphite part is replaced to obtain the graphite part replacement result.

[0106] Optionally, in some embodiments of this application, after obtaining a maintenance control result by performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information, the method further includes: After the current batch is actually processed, if the maintenance control result includes the cleaning result, then the graphite part corresponding to the cleaning result remains unchanged; After the current batch is actually processed, if the maintenance control result does not include the cleaning result, the predicted graphite part status information is adjusted according to the average actual film thickness information corresponding to the current batch to obtain the actual graphite part status information. Another maintenance control result is obtained by performing maintenance control on the graphite component based on the actual graphite component status information and the maintenance condition information; The actual average film thickness information is based on the average film thickness measured from at least one wafer corresponding to the current batch after processing based on the processing formula information.

[0107] In this embodiment, a first determining module 401 determines maintenance condition information based on the type of graphite component, a second determining module 402 determines the processing formula information corresponding to the current batch, the processing formula information corresponding to graphite component influence information, a prediction module 403 predicts the predicted graphite component state information after the current batch is processed based on the processing formula information, based on the graphite component influence information, and a processing module 404 performs maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information to obtain a maintenance control result.

[0108] In this embodiment, the state of the graphite part after processing is predicted before actual measurement (at least before, during and after processing). Based on the maintenance condition information and the predicted state of the graphite part, the maintenance of the graphite part is controlled, so that the maintenance of the graphite part no longer depends on the film thickness measurement results after processing, thus solving the problem of delayed maintenance of graphite parts.

[0109] Furthermore, by predicting the state of graphite parts through processing formula information, the state analysis of graphite parts is no longer limited to the measurement results of film thickness. The embodiments of this application fully consider the influence of processing formula on the state of graphite parts, which helps to improve the accuracy and rationality of the timing of graphite part maintenance.

[0110] In addition, this application also provides an electronic device, such as Figure 5 As shown, it illustrates a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Specifically: The electronic device may include components such as a processor 501 with one or more processing cores, a memory 502 with one or more computer-readable storage media, a power supply 503, and an input unit 504. Those skilled in the art will understand that... Figure 5 The electronic device structure shown does not constitute a limitation on the electronic device and may include more or fewer components than shown, or combine certain components, or have different component arrangements. Wherein: The processor 501 is the control center of the electronic device. It connects various parts of the electronic device via various interfaces and lines. By running or executing software programs and / or modules stored in the memory 502, and by calling data stored in the memory 502, it performs various functions and processes data, thereby providing overall monitoring of the electronic device. Optionally, the processor 501 may include one or more processing cores; preferably, the processor 501 may integrate an application processor and a modem processor, wherein the application processor mainly handles the operating system, user interface, and applications, and the modem processor mainly handles wireless communication. It is understood that the modem processor may not be integrated into the processor 501.

[0111] The memory 502 can be used to store software programs and modules. The processor 501 executes various functional applications and data processing by running the software programs and modules stored in the memory 502. The memory 502 may mainly include a program storage area and a data storage area. The program storage area may store the operating system, applications required for at least one function, etc.; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 502 may include high-speed random access memory, and may also include non-volatile memory, such as at least one disk storage device, flash memory device, or other volatile solid-state storage device. Accordingly, the memory 502 may also include a memory controller to provide the processor 501 with access to the memory 502.

[0112] The electronic device also includes a power supply 503 that supplies power to various components. Preferably, the power supply 503 can be logically connected to the processor 501 through a power management system, thereby enabling functions such as charging, discharging, and power consumption management through the power management system. The power supply 503 may also include one or more DC or AC power supplies, recharging systems, power equipment debugging circuits, power converters or inverters, power status indicators, and other arbitrary components.

[0113] The electronic device may also include an input unit 504, which can be used to receive input digital or character information and generate keyboard, mouse, joystick, optical or trackball signal inputs related to user settings and function control.

[0114] Although not shown, the electronic device may also include a display unit, etc., which will not be described in detail here. Specifically, in this embodiment, the processor 501 in the electronic device loads the executable files corresponding to the processes of one or more application programs into the memory 502 according to the following instructions, and the processor 501 runs the application programs stored in the memory 502, thereby implementing the steps in any of the graphite component maintenance control methods provided in the embodiments of this application.

[0115] In this embodiment, maintenance condition information is determined based on the type of graphite component, and processing formula information corresponding to the current batch is determined. This processing formula information corresponds to graphite component impact information. Based on the graphite component impact information, the predicted graphite component state information after processing the current batch based on the processing formula information is predicted. Based on the predicted graphite component state information and maintenance condition information, maintenance control is performed on the graphite component to obtain the maintenance control result.

[0116] In this embodiment, the state of the graphite part after processing is predicted before actual measurement (at least before, during and after processing). Based on the maintenance condition information and the predicted state of the graphite part, the maintenance of the graphite part is controlled, so that the maintenance of the graphite part no longer depends on the film thickness measurement results after processing, thus solving the problem of delayed maintenance of graphite parts.

[0117] Furthermore, by predicting the state of graphite parts through processing formula information, the state analysis of graphite parts is no longer limited to the measurement results of film thickness. The embodiments of this application fully consider the influence of processing formula on the state of graphite parts, which helps to improve the accuracy and rationality of the timing of graphite part maintenance.

[0118] For details on the implementation of each of the above operations, please refer to the previous examples, which will not be repeated here.

[0119] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be performed by instructions, or by instructions controlling related hardware. These instructions can be stored in a computer-readable storage medium and loaded and executed by a processor.

[0120] Therefore, this application provides a computer-readable storage medium storing a computer program that can be loaded by a processor to execute the steps in any of the graphite component maintenance control methods provided in this application.

[0121] For details on the implementation of each of the above operations, please refer to the previous examples, which will not be repeated here.

[0122] The computer-readable storage medium may include: read-only memory (ROM), random access memory (RAM), disk or optical disk, etc.

[0123] Since the instructions stored in the computer-readable storage medium can execute the steps of any of the graphite component maintenance control methods provided in this application, the beneficial effects that any of the graphite component maintenance control methods provided in this application can achieve can be realized, as detailed in the preceding embodiments, and will not be repeated here.

[0124] The foregoing has provided a detailed description of a graphite component maintenance control method, apparatus, electronic device, and computer-readable storage medium provided in this application. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method for maintaining and controlling graphite components, characterized in that, The method includes: Determine maintenance conditions based on the type of graphite component; Determine the processing formula information corresponding to the current batch, wherein the processing formula information corresponds to the graphite part influence information; Based on the graphite part influence information, predict the predicted graphite part status information after processing the current batch based on the processing formula information; Based on the predicted graphite component status information and the maintenance condition information, maintenance control is performed on the graphite component to obtain the maintenance control result.

2. The graphite component maintenance and control method according to claim 1, characterized in that, The graphite component impact information includes the expected growth film thickness information and film thickness impact coefficient information, and the predicted graphite component state information includes the predicted film thickness information corresponding to the graphite component; The step of predicting the predicted state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information, includes: The predicted film thickness growth information is calculated based on the expected film thickness growth information and the film thickness influence coefficient information; The predicted film thickness information is calculated based on the current cumulative film thickness information of the graphite component and the predicted film thickness growth information.

3. The graphite component maintenance and control method according to claim 2, characterized in that, The maintenance condition information includes film thickness limitation information, and the maintenance control results include cleaning results; The step of performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information to obtain a maintenance control result includes: If the predicted film thickness information is greater than or equal to the film thickness limit information, then the graphite part is cleaned to obtain the cleaning result.

4. The graphite component maintenance and control method according to claim 1, characterized in that, The graphite part influence information includes the number of times influence information, and the predicted graphite part state information includes the target number of times the graphite part is processed; The step of predicting the predicted state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information, includes: The number of processing times is calculated based on the number of wafers corresponding to the current batch and the number of wafers processed per batch by the target processing equipment. Calculate the target processing growth number based on the processing number and the impact information of the number; The target number of processing times is obtained based on the current cumulative number of processing times and the target number of processing increases.

5. The graphite component maintenance and control method according to claim 4, characterized in that, The maintenance condition information includes processing number limit information, and the maintenance control result includes cleaning result; The step of performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information to obtain a maintenance control result includes: If the target number of processing operations is greater than or equal to the processing operation limit information, then the graphite part is cleaned to obtain the cleaning result.

6. The graphite component maintenance and control method according to claim 1, characterized in that, The maintenance condition information includes cleaning frequency limits; After obtaining the maintenance control result by performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information, the method further includes: If the maintenance control result includes cleaning result or the maintenance control includes cleaning, then update the cumulative cleaning count corresponding to the graphite part; If the cumulative number of cleanings is greater than or equal to the cleaning count limit, the graphite part is replaced to obtain the graphite part replacement result.

7. The graphite component maintenance control method according to claim 1, characterized in that, After obtaining the maintenance control result by performing maintenance control on the graphite component based on the predicted graphite component state information and the maintenance condition information, the method further includes: After the current batch is actually processed, if the maintenance control result includes the cleaning result, then the graphite part corresponding to the cleaning result remains unchanged; After the current batch is actually processed, if the maintenance control result does not include the cleaning result, the predicted graphite part status information is adjusted according to the average actual film thickness information corresponding to the current batch to obtain the actual graphite part status information. Another maintenance control result is obtained by performing maintenance control on the graphite component based on the actual graphite component status information and the maintenance condition information; The actual average film thickness information is based on the average film thickness measured after processing at least one wafer corresponding to the current batch based on the processing formula information.

8. A graphite component maintenance control device, characterized in that, The device includes: The first determining module is used to determine maintenance condition information based on the type of graphite component; The second determining module is used to determine the processing formula information corresponding to the current batch, wherein the processing formula information corresponds to the graphite part influence information; The prediction module is used to predict the state information of the graphite parts after processing the current batch based on the processing formula information, according to the graphite part influence information. The processing module is used to perform maintenance control on the graphite component based on the predicted graphite component status information and the maintenance condition information to obtain the maintenance control result.

9. An electronic device, characterized in that, It includes a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the graphite component maintenance control method as described in any one of claims 1-7.

10. A storage medium, characterized in that, The storage medium stores a computer program, which, when executed by a processor, implements the steps of the graphite component maintenance control method as described in any one of claims 1-7.

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