Connector and processing method

Abstract

The invention discloses a connector and a processing method. The connector comprises a shell; a plurality of contact elements are arranged on the shell in an array penetrating manner; the shell comprises an extending part and a connecting part, and the connecting part forms a bulge towards the outer side of the extending part; the end faces, close to one side of the extending part, of the extending part and the protrusion of the shell are first non-plating areas, and the end face of the connecting part and the side face of the protrusion are first plating areas. The first plating layer area is locally selected for plating nickel, palladium and gold on the connector shell to cover the insertion contact welding area of the connector and the T / R assembly interface, so that the conductivity, weldability, wear resistance and corrosion resistance of the contact area of the connector and the T / R assembly interface are improved, the dielectric pressure resistance is improved, and the manufacturing cost is effectively controlled. The housing and the contact element are integrally connected, so that heat generated during working of the T / R assembly can be quickly led out, performance degradation of an interconnection interface of the connector caused by high temperature is effectively avoided, and stable operation under a high-power-density working condition is ensured.

Description

Technical Field

[0001] This invention relates to the field of connector technology, and more particularly to a connector and its processing method. Background Technology

[0002] Micro-rectangular glass sintered connectors are key connection components in phased array antenna systems. Currently, the micro-rectangular glass sintered connectors used in T / R assemblies still mainly rely on Kovar alloy as the shell material, which is sintered with DM-305 glass powder at high temperatures to achieve good hermeticity and mechanical strength. However, under long-term high and low temperature cycling conditions, the insufficient matching of the thermal expansion coefficients between the glass sintered layer and the Kovar alloy shell can easily lead to the formation of micro-cracks or tiny gaps in the interface area. This results in a gradual degradation of the connector's hermeticity, making it difficult to maintain the original insulation and protection levels. Summary of the Invention

[0003] The purpose of this invention is to address the shortcomings of existing technologies by proposing a connector and its processing method.

[0004] To achieve the above objectives, the present invention adopts the following technical solution: a connector, which mates with a T / R component interface, the connector comprising: case; A plurality of contact elements are arranged in an array on the housing; The housing includes an extension and a connecting portion, wherein the connecting portion protrudes outward from the extension; The end face of the extension and the protrusion of the housing near the side of the extension is a first non-plated area, and the end face of the connecting part and the side face of the protrusion are a first plating area.

[0005] As a further description of the above technical solution: a first step and a second step are sequentially provided on the inner side of the T / R component interface, and the side of the first step cooperates with the side of the protrusion, so that a gap is formed between the end face of the connecting part and the end face of the T / R component interface.

[0006] As a further description of the above technical solution: the end face of the second step abuts against the end face of the protrusion near the extension, and the side face of the extension matches the side face of the second step.

[0007] As a further description of the above technical solution: the side of the second step is the second non-plated area, and the inside of the T / R component interface is the second plating area.

[0008] As a further description of the above technical solution: the contact member has a countersunk hole at one end near the connecting part, and a connecting terminal at the other end; the outer side of the contact member has a third plating area.

[0009] As a further description of the above technical solution: the material of the shell is aluminum nitride ceramic, the material of the contact element is Kovar alloy, and the shell and the contact element are sintered to form an integrated structure.

[0010] As a further description of the above technical solution: the material of the T / R component interface is aluminum silicon, which is welded to the housing at the gap.

[0011] As a further description of the above technical solution: the first plating area, the second plating area and the third plating area are formed by electroplating, and the material of the plating is a nickel-palladium-gold alloy.

[0012] It also includes a method for processing a connector, the method being applicable to the connector described in any of the above technical solutions, comprising: S1. Insert the contact element into the housing and perform integral sintering in an inert atmosphere to form the connector; S2. A plating layer is formed in the plating area of ​​the housing, contact parts and T / R component interface by electroplating; S3. Connect the connector to the T / R component interface and solder the connector to the T / R component interface at the gap using solder.

[0013] As a further description of the above technical solution: the integrated sintering in an inert atmosphere includes: low-temperature co-firing or high-temperature co-firing, wherein the low-temperature co-firing temperature is 850-950℃ and the high-temperature co-firing temperature is 1300-1600℃.

[0014] The above technical solution has the following advantages or beneficial effects: By selectively plating a first plating layer area of ​​the connector housing with nickel-palladium-gold, covering the mating contact area with the T / R component interface, the conductivity, solderability, wear resistance, and corrosion resistance of the connector-T / R component interface contact area are improved. This helps to enhance the dielectric withstand capability and effectively control manufacturing costs. The integrated connection between the housing and the contacts allows for rapid heat dissipation from the T / R component during operation, reducing the temperature by 15-20°C. This effectively prevents performance degradation of the connector interconnect interface caused by high temperatures, ensuring stable operation under high power density conditions. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is an assembly diagram of the connector and T / R component interface proposed in this invention; Figure 2 This is an exploded view of the connector and T / R component interface proposed in this invention; Figure 3 This is a partial enlarged view of the T / R component interface in this invention; Figure 4 This is a perspective view of the connector proposed in this invention; Figure 5 This is a partial cross-sectional view of the connector proposed in this invention; Figure 6 This is a flowchart of the processing method proposed in this invention.

[0017] Legend: 1. Housing; 11. Extension; 12. Connecting part; 121. Protrusion; 13. First non-plated area; 14. First plating area; 2. Contact element; 21. Countersunk hole; 22. Connecting terminal; 23. Third plating area; 3. T / R component interface; 31. First step; 32. Second step; 33. Second non-plated area; 34. Second plating area. Detailed Implementation

[0018] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0019] Reference Figures 1-5 The present invention provides an embodiment of a connector that mates with a T / R component interface 3. The connector includes a housing 1; a plurality of contacts 2 are arrayed on the housing 1; the housing 1 includes an extension 11 and a connecting portion 12, the connecting portion 12 forming a protrusion 121 on the outside of the extension 11; the end faces of the extension 11 and the protrusion 121 near the side of the extension 11 are a first non-plated region 13, and the end face of the connecting portion 12 and the side face of the protrusion 121 are a first plating region 14.

[0020] In this embodiment, the connector adopts the J30J hermetic connector standard interface, which can replace the traditional J30J hermetic connector in situ. The housing 1 is made of aluminum nitride ceramic and is divided into an extension 11 and a connecting part 12. The connecting part 12 forms a protrusion 121 on the outside, which constitutes a mating structure with the T / R component interface 3. The end face of the extension 11 and the protrusion 121 near the extension is the first non-plated area 13, and the end face of the connecting part 12 and the side face of the protrusion 121 is the first plating area 14. The selective plating design takes into account both electrical performance and cost control.

[0021] The housing 1 is made of aluminum nitride (AlN) ceramic material, which significantly improves the thermal expansion coefficient matching, power withstand capability, and high-voltage insulation characteristics in T / R component applications. For high-power, high-voltage applications, the excellent insulation performance of aluminum nitride ceramic material effectively increases the dielectric withstand voltage of the J30J micro rectangular connector from 600V to ≥1500V (AC).

[0022] This effectively avoids the supply chain risks associated with the reliance on imported core raw materials for traditional connectors. Compared to traditional Kovar alloy glass sintered connectors, the raw material costs of this embodiment are reduced by approximately 30%-40%. At the same time, the simplified process significantly reduces labor and equipment input, resulting in a reduction of over 25% in overall manufacturing costs and a significant improvement in the product's market competitiveness.

[0023] The inner side of the T / R component interface 3 is provided with a first step 31 and a second step 32. The side of the first step 31 cooperates with the side of the protrusion 121, so that a gap is formed between the end face of the connecting part 12 and the end face of the T / R component interface 3. The end face of the second step 32 abuts against the end face of the protrusion 121 near the extension 11, and the side of the extension 11 cooperates with the side of the second step 32.

[0024] In this embodiment, a first step 31 and a second step 32 are sequentially provided on the inner side of the T / R component interface 3. The side of the first step 31 cooperates with the side of the protrusion 121, so that the end face of the connecting part 12 and the end face of the T / R component interface 3 form a gap, which provides space for welding. The end face of the second step 32 abuts against the end face of the protrusion 121 near the extension 11, and the side of the extension 11 cooperates with the side of the second step 32 to achieve precise positioning and radial limiting of the connector.

[0025] The side of the second step 32 is the second non-plated area 33, and the inside of the T / R component interface 3 is the second plating area 34.

[0026] In this embodiment, the side of the second step 32 is the second non-plated area 33, the inside of the interface is the second plating area 34, and the plating material is a nickel-palladium-gold alloy.

[0027] The contact 2 has a countersunk hole 21 at one end near the connecting part 12 and a connecting terminal 22 at the other end. The outer side of the contact 2 has a third plating area 23. The material of the housing 1 is aluminum nitride ceramic, and the material of the contact 2 is Kovar alloy. The housing 1 and the contact 2 are sintered to form an integrated structure.

[0028] In this embodiment, the contact 2 is made of Kovar alloy 4J29, which has a high coefficient of thermal expansion that matches that of aluminum nitride ceramic, thus preventing the interconnect interface from cracking under high and low temperature cycling. The contact 2 array is installed in the housing 1, with a countersunk hole 21 at one end and a connection terminal 22 at the other end. A third plating area 23 is provided on the outer side, and the plating is a nickel-palladium-gold alloy to ensure conductivity and corrosion resistance. The housing 1 and the contact 2 are formed by a co-sintering process under an inert atmosphere, which can be nitrogen or argon.

[0029] The T / R component interface 3 is made of aluminum silicon and is welded to the housing 1 at the gap.

[0030] In this embodiment, the T / R component interface 3 is made of aluminum-silicon alloy CE11 (Si-50%Al), with a coefficient of thermal expansion (CTEI) of 11-16.5ppm / K at 25℃-100℃. It is soldered to the connector at the gap. The aluminum nitride ceramic material used in the housing 1 has a CTEI of 6-6.5ppm / K, and the Kovar alloy 4J29 used in the contact 2 has a CTEI of 5.2-5.5ppm / K. The solder is an alloy of Sn96Cu3.5Ag0.5, with a Sn content of 96%, a Cu content of 3.5%, and an Ag content of 0.5%. The soldering temperature is 217℃. The materials of the T / R component interface 3, housing 1, and contact 2 have matching coefficients of thermal expansion, resulting in low thermal stress during welding.

[0031] The first plating region 14, the second plating region 34, and the third plating region 23 are formed by electroplating, and the plating material is a nickel-palladium-gold alloy.

[0032] In this embodiment, a nickel-palladium-gold alloy plating is deposited in the first plating area 14 of the housing 1, the third plating area 23 of the contact 2, and the second plating area 34 of the T / R component interface 3 by electroplating. The non-plating areas retain their original surfaces to ensure insulation performance and cost optimization.

[0033] The connector is assembled at the T / R component interface 3 and connects to external cables or devices via the J30J standard interface. The connection terminals 22 of the contact 2 transmit the control signals and power supply signals of the T / R component. The housing 1 provides insulation protection and structural support, and the first plating area 14 and the second plating area 34 ensure contact conductivity and welding reliability. The housing 1 and the contact 2 are integrally sintered to ensure the airtightness and mechanical stability of the connector in harsh environments. Heat is quickly conducted to the T / R component shell through the aluminum nitride ceramic of the housing 1, achieving efficient heat dissipation.

[0034] Specifically, the thermal conductivity of housing 1 is greater than or equal to 170 W / (m·K), which improves the thermal conductivity by more than 5 times compared to traditional glass sintered connectors. It can quickly dissipate the heat generated during the operation of the T / R component, reducing the core temperature of the T / R component by 15-20℃, effectively avoiding the performance degradation of the connector interconnect interface caused by high temperature, and ensuring stable operation under high power density conditions.

[0035] Reference Figure 6 It also includes a method for processing a connector, the method being applicable to the connectors of any of the above-mentioned technical solutions, comprising: S1. Insert the contact element into the housing and sinter it in an inert atmosphere to form a connector; S2. A plating layer is formed in the plating area of ​​the housing, contact parts and T / R component interface by electroplating; S3. Connect the connector to the T / R component interface and solder the connector to the T / R component interface at the gap using solder.

[0036] In this embodiment, the contact 2 is inserted into the hole of the housing 1 and placed in an inert atmosphere sintering furnace for co-sintering. The low-temperature or high-temperature co-firing process is selected according to the type of ceramic. The low-temperature co-firing temperature is 850-950℃, and the high-temperature co-firing temperature is 1300-1600℃. The inert atmosphere can be nitrogen or argon, forming an integrated structure of the housing 1 and the contact 2 to ensure the connection strength.

[0037] In the first plating area 14 of the housing 1, the third plating area 23 of the contact 2, and the second plating area 34 of the T / R component interface 3, a nickel-palladium-gold alloy plating layer is deposited using an electroplating process. The unplated areas retain their original surfaces and are treated with selective electroplating. The surface of the contact 2 is coated with CE / Ct.Ap.Ni5-10Pd0.5-1.0Au(99.9)2.5; CE / Ct: indicates the plating method, usually electrochemical plating; Ap: indicates the plating characteristics, referring to the post-plating appearance requirements, such as bright or semi-bright (specific grades need to be referenced in standards). Ni5-10: Nickel plating layer, 5-10μm thick. As the bottom layer, its main function is to prevent the copper substrate from diffusing outwards and to improve surface hardness. Pd0.5-1.0: Palladium plating layer, 0.5-1.0μm thick. As the intermediate layer, its main function is to prevent the gold layer from interdiffusion with the nickel layer and to improve high-temperature resistance and corrosion resistance. Au(99.9)2.5: Gold plating layer, 99.9% purity, 2.5μm thickness. As a surface layer, it provides low and stable contact resistance and excellent corrosion resistance.

[0038] The housing 1 is coated with CE / Ct.Ap.Ni5-10Pd0.5-1.0Au(99.9)0.5, and the second plating area 34 of the T / R component interface 3 is gold-plated, which not only improves the conductivity, weldability, wear resistance and corrosion resistance of the contact area, but also effectively controls the manufacturing cost and improves the dielectric pressure resistance.

[0039] The sintered connector and the T / R component interface 3 are mated through the first step 31 and the second step 32. Solder is filled into the gap, and the connector is encapsulated by reflow soldering or laser soldering. This achieves reliable interconnection between the connector and the T / R component, simplifying the multiple brazing and assembly processes required for traditional glass sintered connectors and shortening the production cycle by about 30%. At the same time, due to the improved process integration and thermal stress control, the yield rate is increased to over 95%.

[0040] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0041] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A connector, characterized in that, The connector mates with the T / R component interface (3), and the connector includes: Shell (1); A number of contact elements (2) are arranged in an array on the housing (1); The housing (1) includes an extension (11) and a connecting portion (12), wherein the connecting portion (12) forms a protrusion (121) on the outside of the extension (11). The end face of the extension (11) and the protrusion (121) of the housing (1) near the side of the extension (11) is a first non-plated area (13), and the end face of the connecting part (12) and the side face of the protrusion (121) are a first plating area (14).

2. The connector according to claim 1, characterized in that: The inner side of the T / R component interface (3) is provided with a first step (31) and a second step (32). The side of the first step (31) cooperates with the side of the protrusion (121) so that a gap is formed between the end face of the connecting part (12) and the end face of the T / R component interface (3).

3. The connector according to claim 2, characterized in that: The end face of the second step (32) abuts against the end face of the protrusion (121) near the extension (11), and the side of the extension (11) matches the side of the second step (32).

4. The connector according to claim 2, characterized in that: The side of the second step (32) is the second non-plated area (33), and the inside of the T / R component interface (3) is the second plating area (34).

5. The connector according to claim 4, characterized in that: The contact (2) has a countersunk hole (21) at one end near the connecting part (12) and a connecting terminal (22) at the other end. The outer side of the contact (2) has a third plating area (23).

6. The connector according to claim 1, characterized in that: The shell (1) is made of aluminum nitride ceramic, and the contact (2) is made of Kovar alloy. The shell (1) and the contact (2) are sintered to form an integrated structure.

7. The connector according to claim 1, characterized in that: The T / R component interface (3) is made of aluminum silicon and is welded to the housing (1) at the gap.

8. The connector according to claim 5, characterized in that: The first plating region (14), the second plating region (34) and the third plating region (23) are formed by electroplating, and the material of the plating is a nickel-palladium-gold alloy.

9. A method for processing a connector, characterized in that, The processing method is applicable to the connectors described in any one of claims 1-8, comprising: S1. Insert the contact element into the housing and perform integral sintering in an inert atmosphere to form the connector; S2. A plating layer is formed in the plating area of ​​the housing, contact parts and T / R component interface by electroplating; S3. Connect the connector to the T / R component interface and solder the connector to the T / R component interface at the gap using solder.

10. The processing method according to claim 9, characterized in that: The integrated sintering in an inert atmosphere includes: low-temperature co-firing or high-temperature co-firing, wherein the low-temperature co-firing temperature is 850-950℃ and the high-temperature co-firing temperature is 1300-1600℃.

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