Magnetic field detection device

Abstract

The invention discloses a magnetic field detection device comprising a detection module used for generating a magnetic field detection signal; the calibration module is used for generating a reference signal; the reference signal is used for calibrating the magnetic field detection signal, and the reference signal is irrelevant to a uniform environmental magnetic field; when the value of the reference signal has a first relationship with a first preset value, the magnetic field detection signal is amplified; or, when the value of the reference signal has a second relationship with a second preset value, the magnetic field detection signal is weakened. According to the magnetic field detection device provided by the invention, the magnetic field detection signal can be calibrated from the level of numerical values, linear errors are eliminated, and the problem of detection range shrinkage caused by power consumption can be avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of test measurement technology, in particular to a magnetic field detection device. BACKGROUND

[0002] Magnetic sensors are used to detect magnetic fields, and have a wide range of applications, such as three-axis magnetometers for measuring the earth's magnetic field, magnetic displacement meters for measuring the magnetic displacement formed by a lens, magnetic switches for detecting the opening and closing of a screen, etc. in consumer electronics; and angle sensors, current sensors, etc. in industry and transportation vehicles.

[0003] In order to ensure the stability of the measurement process, a magnetic sensor can be prepared using a magnetic resistance, but the magnetic sensor thus prepared is based on the characteristics of a magnetic material, and therefore has a physical characteristic in which the linear error of the output curve increases with the increase in the strength of the magnetic field to be measured. The linear error can be calibrated using a calibration device.

[0004] The prior art provides two sensors to measure the magnetic field to be measured, and the measurement results are compared with each other to offset the linear error caused by the increase in the strength of the magnetic field to be measured, but the process of measuring the magnetic field to be measured and the process of offsetting and calibrating are mutually exclusive, and switching between the measurement mode and the calibration mode is required, which interrupts the normal detection process and cannot be applied to high-bandwidth application scenarios. Furthermore, since the sensors need to be arranged correspondingly, the power consumption and other electrical parameters of the calibration process need to be adjusted according to the field conditions, which affects the detection range that can be supported by the magnetic field detection device. SUMMARY

[0005] One of the purposes of the present application is to provide a magnetic field detection device to solve the technical problem that the magnetic field detection process in the prior art has a linear error and cannot adapt to high-bandwidth and wide-detection-range requirements.

[0006] To achieve one of the above-mentioned purposes, an embodiment of the present application provides a magnetic field detection device, comprising: a detection module configured to generate a magnetic field detection signal; and a calibration module configured to generate a reference signal; the reference signal is used to calibrate the magnetic field detection signal, and the reference signal is independent of a uniform ambient magnetic field; when the value of the reference signal has a first relationship with a first preset value, the magnetic field detection signal is amplified; or when the value of the reference signal has a second relationship with a second preset value, the magnetic field detection signal is attenuated.

[0007] Compared with existing technologies, the magnetic field detection device provided by this invention, by setting up independent detection and calibration modules, can avoid the bandwidth of the magnetic field detection device being affected by the alternation of detection and calibration steps; by adjusting the magnitude of the magnetic field detection signal at the detection module based on the value of the reference signal, the magnetic field detection signal can be calibrated at the numerical level, eliminating linearity errors; by configuring the reference signal to be independent of the uniform ambient magnetic field, the overall performance of the magnetic field detection device can be avoided by the influence of the ambient magnetic field on the reference signal or the calibration module used to generate it, especially avoiding the problem of detection range shrinkage due to power consumption. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the magnetic field detection device in one embodiment of the present invention.

[0009] Figure 2 This is a schematic diagram of the magnetic field detection device in the first embodiment of the present invention.

[0010] Figure 3 This is a schematic diagram of the magnetic field detection device in the second embodiment of the present invention.

[0011] Figure 4 This is a schematic diagram of the magnetic field detection device in the third embodiment of the present invention.

[0012] Figure 5 This is a schematic diagram of the magnetic field detection device in the fourth embodiment of the present invention.

[0013] Figure 6 This is a schematic diagram of the magnetic field detection device in the fifth embodiment of the present invention.

[0014] Figure 7 This is a schematic diagram of the magnetic field detection device in the sixth embodiment of the present invention.

[0015] Figure 8 This is a schematic diagram of the calibration module in one embodiment of the present invention.

[0016] Figure 9 This is a schematic diagram of the calibration module in the first embodiment of the present invention.

[0017] Figure 10 This is a schematic diagram of the detection unit in the second embodiment of the present invention.

[0018] Figure 11 This is a schematic diagram of the detection unit in the third embodiment of the present invention.

[0019] Figure 12 This is a partial structural schematic diagram of the detection unit in the fourth embodiment of the present invention.

[0020] Figure 13This is a schematic diagram of the detection unit in the fourth embodiment of the present invention.

[0021] Figure 14 This is a partial structural schematic diagram of the detection unit in the fifth embodiment of the present invention.

[0022] Figure 15 This is a schematic diagram of the detection unit in the fifth embodiment of the present invention.

[0023] Figure 16 This is a schematic diagram of the detection unit in the sixth embodiment of the present invention.

[0024] Figure 17 This is a partial structural schematic diagram of the detection unit in the seventh embodiment of the present invention.

[0025] Figure 18 This is a schematic diagram of the detection unit in the seventh embodiment of the present invention. Detailed Implementation

[0026] The present invention will now be described in detail with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the scope of protection of the present invention.

[0027] It should be noted that the term "comprising" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Furthermore, the terms "first," "second," "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] One embodiment of the present invention provides a magnetic field detection device, such as... Figure 1 As shown.

[0029] Magnetic field detection devices are used to detect information about magnetic fields.

[0030] The magnetic field detection device includes a detection module 200.

[0031] The detection module 200 is used to generate a magnetic field detection signal Vo. The magnetic field detection device can directly output the magnetic field detection signal Vo, or it can process the magnetic field detection signal Vo before outputting it. The processing of the magnetic field detection signal Vo by the magnetic field detection device can include calculation, calibration, and standardization. In one embodiment, or in one operating state, the magnetic field detection device can also directly output the magnetic field detection signal Vo.

[0032] The detection module 200 is used to detect the environmental magnetic field.

[0033] The magnetic field detection device includes a calibration module 100.

[0034] The calibration module 100 is used to generate a reference signal Vref. The reference signal Vref is used to calibrate the magnetic field detection signal.

[0035] The calibration module 100 and the detection module 200 are set up separately to form two signal links, which can effectively prevent the compression of the bandwidth of the magnetic field detection signal during the calibration process and achieve real-time sensitivity calibration under high bandwidth signal output.

[0036] The reference signal Vref can be used to calibrate the magnetic field detection signal Vo. It can be used as a reference for adjusting the magnetic field detection signal Vo, participate in the subsequent processing of the magnetic field detection signal Vo to generate the final output of the magnetic field detection device, or determine the final output by performing operations such as superposition or subtraction with the magnetic field detection signal Vo.

[0037] The reference signal Vref is used to adjust the strength of the magnetic field detection signal Vo. In this way, by adjusting the magnitude of the magnetic field detection signal Vo, linearity error can be eliminated.

[0038] In one embodiment, the reference signal Vref is used to amplify the magnetic field detection signal Vo.

[0039] When the value of the reference signal Vref has a first relationship with the first preset value, the magnetic field detection signal Vo is amplified. In this way, the current state of the magnetic field detection signal Vo can be determined by numerical judgment, and the numerical distribution area of ​​the magnetic field detection signal Vo can be changed by amplification, thereby correcting the magnetic field detection sensitivity of the detection module 200.

[0040] In one embodiment, the reference signal Vref is used to weaken the magnetic field detection signal Vo.

[0041] When the value of the reference signal Vref has a second relationship with the second preset value, the magnetic field detection signal Vo weakens. In this way, the current state of the magnetic field detection signal Vo can be determined by numerical judgment, and the numerical distribution area of ​​the magnetic field detection signal Vo can be changed by weakening processing, thereby correcting the magnetic field detection sensitivity of the detection module 200.

[0042] The reference signal Vref is independent of the uniform ambient magnetic field. Thus, the reference signal Vref is independent of the ambient magnetic field, eliminating the need to adjust the electrical parameters at the calibration module 100 (e.g., the current flowing through the calibration module 100) according to the strength of the ambient magnetic field. This avoids excessive power consumption and poor power supply capabilities that could compress the range of magnetic field detection, and enables more accurate magnetic field detection sensitivity calibration.

[0043] In one embodiment, the first preset value is equal to the second preset value. In this embodiment, when the reference signal Vref and the preset value satisfy the first relationship or do not satisfy the second relationship, the magnetic field detection signal Vo is amplified; when the reference signal Vref and the preset value do not satisfy the first relationship or satisfy the first relationship, the magnetic field detection signal Vo is weakened.

[0044] In one embodiment, the first relationship includes: the value of the reference signal Vref is less than a first preset value. In this embodiment, when the value of the reference signal Vref is less than the first preset value, the magnetic field detection signal Vo is amplified.

[0045] If the reference signal Vref is less than the first preset value, it indicates that the quality of the magnetic field detection signal Vo is lower than the set requirement; the first preset value can also be set accordingly.

[0046] In one embodiment, the second relationship includes: the value of the reference signal Vref is greater than a second preset value. In this embodiment, when the value of the reference signal Vref is greater than the second preset value, the magnetic field detection signal Vo is amplified.

[0047] If the reference signal Vref is greater than the second preset value, it indicates that the quality of the magnetic field detection signal Vo is lower than the set requirement; the second preset value can also be set accordingly.

[0048] In one embodiment, the magnetic field detection device further includes a first amplifier 310.

[0049] The input of the first amplifier 310 is coupled to the detection module 200, and the output of the first amplifier 310 is used to generate a magnetic field detection signal Vo. By amplifying the output of the detection module 200, the magnetic field detection signal Vo can be processed or subjected to other subsequent processing.

[0050] In one embodiment, the magnetic field detection device further includes a second amplifier 320.

[0051] The input of the second amplifier 320 is coupled to the calibration module 100, and the output of the second amplifier 320 is used to generate a reference signal Vref. By amplifying the output of the calibration module 100, the reference signal Vref can be calculated or subjected to other subsequent processing.

[0052] The strength of the magnetic field detection signal Vo can be controlled by controlling the drive current of the input detection module 200.

[0053] The strength of the magnetic field detection signal Vo can be controlled by controlling the driving voltage of the input detection module 200.

[0054] In one embodiment, the magnetic field detection signal Vo is amplified by increasing the drive current of the input detection module 200.

[0055] In one embodiment, the magnetic field detection signal Vo is amplified by increasing the driving voltage of the input detection module 200.

[0056] In one embodiment, the magnetic field detection signal Vo is weakened, which can be achieved by reducing the drive current of the input detection module 200.

[0057] In one embodiment, the magnetic field detection signal Vo is weakened, which can be achieved by reducing the driving voltage of the input detection module 200.

[0058] Thus, by increasing or decreasing the driving current or driving voltage, the output of the magnetic field detection signal Vo is affected, achieving the effect of linear error calibration.

[0059] In one embodiment, the process of controlling the driving voltage or driving current of the input detection module 200 can be implemented by setting a processing module in the magnetic field detection device.

[0060] like Figure 2 As shown, in the first embodiment provided by the present invention, the magnetic field detection device further includes a first processing module 410.

[0061] The first processing module 410 is used to control the drive current or drive voltage.

[0062] The first processing module 410 may be in the form of an electronic control unit or an integrated circuit. Specifically, the first processing module 410 may include a drive circuit, an amplifier circuit, a filter circuit, an analog-to-digital converter, a microcontroller or digital signal processor, and a communication interface, etc.

[0063] The first processing module 410 can control the driving voltage by outputting a variable voltage through a digital-to-analog converter; the first processing module 410 can control the driving voltage and driving current by generating a pulse width modulation signal and controlling the duty cycle and frequency; the first processing module 410 can control the driving voltage or driving current by using a variable gain amplifier and controlling the gain; the first processing module 410 can achieve control by forming a feedback loop.

[0064] In one embodiment, the output of the first processing module 410 is coupled to the input of the detection module 200, and is used to output a calibration value. The calibration value is used to control the drive current or to control the drive voltage.

[0065] In one specific embodiment, the output terminal of the first processing module 410 is also coupled to the input terminal of the calibration module 100 for outputting calibration values. By synchronously adjusting the drive current of the calibration module 100 and the detection module 200, or synchronously adjusting the drive voltage of the calibration module 100 and the detection module 200, a stable and rapid linear error calibration operation can be achieved.

[0066] When the drive current or drive voltage increases, causing the reference signal Vref and the magnetic field detection signal Vo to increase accordingly, the first or second preset value used to compare with the value of the reference signal Vref to determine the error can also be increased accordingly to match, facilitating dynamic feedback adjustment. Conversely, when the drive current or drive voltage decreases, causing the reference signal Vref and the magnetic field detection signal Vo to decrease accordingly, the first or second preset value used to compare with the value of the reference signal Vref to determine the error can also be decreased accordingly to match.

[0067] In one embodiment, the first processing module 410 is used to output a first calibration amount when the value of the reference signal Vref has a first relationship with a first preset value.

[0068] In one embodiment, the detection module 200 receives a first calibration value and amplifies the magnetic field detection signal Vo.

[0069] In one specific embodiment, the first calibration quantity can be an electrical signal, such as a digital signal, an analog signal, or a mechanical signal such as an action signal.

[0070] In one specific embodiment, the first processing module 410 is used to output a first calibration amount when the value of the reference signal Vref is less than a first preset value.

[0071] In one embodiment, the first processing module 410 is used to output a second calibration amount when the value of the reference signal Vref has a second relationship with a second preset value.

[0072] In one embodiment, the detection module 200 receives a second calibration value, and the magnetic field detection signal Vo is weakened.

[0073] In one specific embodiment, the second calibration quantity can be an electrical signal, such as a digital signal, an analog signal, or a mechanical signal such as an action signal.

[0074] In one specific embodiment, the first processing module 410 is used to output a second calibration amount when the value of the reference signal Vref is greater than a second preset value.

[0075] In one specific embodiment, the first calibration amount is used to increase the drive current.

[0076] In one specific embodiment, the first calibration amount is used to increase the driving voltage.

[0077] In one specific embodiment, the second calibration amount is used to reduce the drive current.

[0078] In one specific embodiment, the second calibration amount is used to reduce the driving voltage.

[0079] In one embodiment, the input terminal of the first processing module 410 is coupled to the output terminal of the calibration module 100. The input terminal of the first processing module 410 is used to receive the reference signal Vref output by the calibration module 100.

[0080] In one embodiment, the magnetic field detection device further includes a second amplifier 320. The input of the second amplifier 320 is coupled to the output of the calibration module 100, and the output of the second amplifier 320 is coupled to the input of the first processing module 410. Based on the output of the calibration module 100, the second amplifier 320 amplifies and generates a reference signal Vref.

[0081] In one embodiment, the magnetic field detection device further includes a second processing module 420.

[0082] In one embodiment, the output of the second processing module 420 is used to generate a magnetic field detection signal Vo based on the output of the detection module 200.

[0083] In one specific embodiment, the second processing module 420 includes a sampling circuit that samples the signal at the output terminal of the second processing module 420 according to a preset sampling frequency.

[0084] In one embodiment, the input of the second processing module 420 is coupled to the output of the detection module 200.

[0085] In one specific embodiment, the input terminal of the second processing module 420 is electrically connected to the output terminal of the detection module 200. In this embodiment, the coupling is specifically an electrical connection.

[0086] In one specific embodiment, the magnetic field detection device further includes a first amplifier 310. The input terminal of the first amplifier 310 is coupled to the output terminal of the detection module 200, and the output terminal of the first amplifier 310 is coupled to the input terminal of the second processing module 420. The second processing module 420 generates a magnetic field detection signal Vo based on the amplified output of the first amplifier 310. In this embodiment, the coupling is specifically an indirect connection established via the first amplifier 310.

[0087] The strength of the magnetic field detection signal Vo can be controlled by adjusting the amplification factor of the generated magnetic field detection signal Vo.

[0088] In one embodiment, the magnetic field detection signal Vo is amplified by increasing the amplification factor of the generated magnetic field detection signal Vo.

[0089] In one embodiment, the magnetic field detection signal Vo is weakened, which can be achieved by reducing the amplification factor of the generated magnetic field detection signal Vo.

[0090] This affects the output of the magnetic field detection signal Vo, thus achieving the effect of linear error calibration.

[0091] In one embodiment, the amplification factor of the generated magnetic field detection signal Vo can be adjusted by setting a processing module in the magnetic field detection device.

[0092] like Figure 3 As shown, in the second embodiment provided by the present invention, the magnetic field detection device further includes a first processing module 410.

[0093] The first processing module 410 is used to control the amplification factor of the magnetic field detection signal of the magnetic field detection device.

[0094] In one embodiment, the output of the first processing module 410 is coupled to the control terminal of the detection module 200, and is used to output a calibration value. The calibration value is used to control the amplification factor of the magnetic field detection signal Vo.

[0095] When the amplification factor increases, causing the reference signal Vref and the magnetic field detection signal Vo to increase accordingly, the first or second preset value used to compare with the value of the reference signal Vref to determine the error can also be increased accordingly to match, facilitating dynamic feedback adjustment. Conversely, when the amplification factor decreases, causing the reference signal Vref and the magnetic field detection signal Vo to decrease accordingly, the first or second preset value used to compare with the value of the reference signal Vref to determine the error can also be decreased accordingly to match.

[0096] In one embodiment, the first processing module 410 is used to output a third calibration amount when the value of the reference signal Vref has a first relationship with a first preset value.

[0097] In one embodiment, the detection module 200 receives a third calibration value, and the magnetic field detection signal Vo is amplified.

[0098] In one embodiment, the first amplifier 310 receives a third calibration value, the magnetic field detection signal Vo, which is amplified.

[0099] In one specific embodiment, the third calibration quantity can be an electrical signal, such as a digital signal, an analog signal, or a mechanical signal such as an action signal.

[0100] In one specific embodiment, the first processing module 410 is used to output a third calibration value when the value of the reference signal Vref is less than a first preset value.

[0101] In one embodiment, the first processing module 410 is used to output a fourth calibration quantity when the value of the reference signal Vref has a second relationship with a second preset value.

[0102] In one embodiment, the detection module 200 receives a fourth calibration value, and the magnetic field detection signal Vo is weakened.

[0103] In one embodiment, the first amplifier 310 receives a fourth calibration value, which weakens the magnetic field detection signal Vo.

[0104] In one specific embodiment, the fourth calibration quantity can be an electrical signal, such as a digital signal, an analog signal, or a mechanical signal such as an action signal.

[0105] In one specific embodiment, the first processing module 410 is used to output a fourth calibration value when the value of the reference signal Vref is greater than a second preset value.

[0106] In one specific embodiment, the third calibration value is used to increase the magnification.

[0107] In one specific embodiment, the fourth calibration amount is used to reduce the magnification.

[0108] In one embodiment, the input terminal of the first processing module 410 is coupled to the output terminal of the calibration module 100. The input terminal of the first processing module 410 is used to receive the reference signal Vref output by the calibration module 100.

[0109] In one embodiment, the magnetic field detection device further includes a second amplifier 320. The input of the second amplifier 320 is coupled to the output of the calibration module 100, and the output of the second amplifier 320 is coupled to the input of the first processing module 410. Based on the output of the calibration module 100, the second amplifier 320 amplifies and generates a reference signal Vref.

[0110] In one embodiment, the amplification factor of the generated magnetic field detection signal Vo can be adjusted by setting an amplifier in the magnetic field detection device.

[0111] In the second embodiment provided by the present invention, the magnetic field detection device further includes a first amplifier 310.

[0112] The input of the first amplifier 310 is coupled to the output of the detection module 200. The output of the first amplifier 310 is used to generate the magnetic field detection signal Vo.

[0113] The first amplifier 310 is used to receive calibration values ​​and control its amplification factor for the output of the detection module 200. Specifically, the first amplifier 310 receives external control signals through its control terminal; the external control signals include at least the calibration values.

[0114] In one embodiment, the magnetic field detection device includes a first processing module 410. The output terminal of the first processing module 410 is coupled to the control terminal of a first amplifier 310, and is used to output a calibration value to control the amplification factor of the first amplifier 310. In some embodiments, the first processing module 410 is used to output a third calibration value. In some embodiments, the first processing module 410 is used to output a fourth calibration value.

[0115] In one embodiment, the magnetic field detection device further includes a second processing module 420.

[0116] In one embodiment, the output of the second processing module 420 is used to generate a magnetic field detection signal Vo based on the output of the detection module 200.

[0117] The output of the first amplifier 310 is coupled to the input of the second processing module 420. The second processing module 420 generates a magnetic field detection signal Vo based on the amplified output of the first amplifier 310.

[0118] The strength of the magnetic field detection signal Vo can be controlled by adjusting the operational gain used to generate the signal.

[0119] In one embodiment, the magnetic field detection signal Vo is amplified by increasing the operational gain of the generated magnetic field detection signal Vo.

[0120] In one embodiment, the magnetic field detection signal Vo is weakened, which can be achieved by reducing the computational gain that generates the magnetic field detection signal Vo.

[0121] This affects the output of the magnetic field detection signal Vo, thus achieving the effect of linear error calibration.

[0122] In one embodiment, the operational gain of generating the magnetic field detection signal Vo can be adjusted by setting a processing module in the magnetic field detection device.

[0123] like Figure 3 As shown, in the second embodiment provided by the present invention, the magnetic field detection device further includes a second processing module 420.

[0124] The second processing module 420 performs calculations on the signals input to the second processing module 420 based on the set operational gain.

[0125] In one embodiment, the output terminal of the second processing module 420 is used to output the processed magnetic field detection signal Vo.

[0126] In one embodiment, the input terminal of the second processing module 420 is coupled to the output terminal of the detection module 200, and is used to perform calculation processing on the output of the detection module 200.

[0127] The second processing module 420 is also used to receive calibration values ​​and control its own operational gain on the output of the detection module 200 (or, in some embodiments, on the output of the first amplifier 310). Specifically, the second processing module 420 receives external control signals through its control terminal; the external control signals include at least the calibration values.

[0128] The magnetic field detection device also includes a first processing module 410.

[0129] The first processing module 410 is used to control the operational gain of the magnetic field detection signal of the magnetic field detection device.

[0130] In one embodiment, the output terminal of the first processing module 410 is coupled to the control terminal of the detection module 200 for outputting a calibration value.

[0131] In one embodiment, the output terminal of the first processing module 410 is coupled to the control terminal of the second processing module 420, and is used to output a calibration value. The calibration value is used to control the operational gain of the magnetic field detection signal Vo.

[0132] When the operational gain increases, causing the reference signal Vref and the magnetic field detection signal Vo to increase accordingly, the first or second preset value used to compare with the value of the reference signal Vref to determine the error can also be increased accordingly to match, facilitating dynamic feedback adjustment. Conversely, when the operational gain decreases, causing the reference signal Vref and the magnetic field detection signal Vo to decrease accordingly, the first or second preset value used to compare with the value of the reference signal Vref to determine the error can also be decreased accordingly to match.

[0133] In one embodiment, the first processing module 410 is used to output a fifth calibration value when the value of the reference signal Vref has a first relationship with a first preset value.

[0134] In one embodiment, the detection module 200 receives a fifth calibration value, and the magnetic field detection signal Vo is amplified.

[0135] In one embodiment, the second processing module 420 receives the fifth calibration value, and the magnetic field detection signal Vo is amplified.

[0136] In one specific embodiment, the fifth calibration quantity can be an electrical signal, such as a digital signal, an analog signal, or a mechanical signal such as an action signal.

[0137] In one specific embodiment, the first processing module 410 is used to output a fifth calibration value when the value of the reference signal Vref is less than a first preset value.

[0138] In one embodiment, the first processing module 410 is used to output a sixth calibration value when the value of the reference signal Vref has a second relationship with a second preset value.

[0139] In one embodiment, the detection module 200 receives a sixth calibration value, and the magnetic field detection signal Vo is weakened.

[0140] In one embodiment, the first amplifier 310 receives a sixth calibration value, which weakens the magnetic field detection signal Vo.

[0141] In one specific embodiment, the sixth calibration quantity can be an electrical signal, such as a digital signal, an analog signal, or a mechanical signal such as an action signal.

[0142] In one specific embodiment, the first processing module 410 is used to output a sixth calibration value when the value of the reference signal Vref is greater than a second preset value.

[0143] In one specific embodiment, the fifth calibration value is used to increase the operational gain.

[0144] In one specific embodiment, the sixth calibration value is used to reduce the operational gain.

[0145] In one embodiment, the input terminal of the first processing module 410 is coupled to the output terminal of the calibration module 100. The input terminal of the first processing module 410 is used to receive the reference signal Vref output by the calibration module 100.

[0146] In one embodiment, the magnetic field detection device further includes a second amplifier 320. The input of the second amplifier 320 is coupled to the output of the calibration module 100, and the output of the second amplifier 320 is coupled to the input of the first processing module 410. Based on the output of the calibration module 100, the second amplifier 320 amplifies and generates a reference signal Vref.

[0147] In the third embodiment provided by the present invention, the magnetic field detection device further includes a first amplifier 310.

[0148] The input of the first amplifier 310 is coupled to the output of the detection module 200. The output of the first amplifier 310 is used to generate the magnetic field detection signal Vo.

[0149] The present invention does not limit the number of detection module 200, calibration module 100, and related amplifiers and processing modules in the magnetic field detection device.

[0150] For example, in some embodiments, multiple detection modules 200 can be provided in the magnetic field detection device; the multiple detection modules 200 can be provided in different areas and different locations, or they can be provided in the same area and the same location. In some embodiments, multiple calibration modules 100 can be provided in the magnetic field detection device.

[0151] like Figures 5 to 7 As shown, in some embodiments provided by the present invention, the magnetic field detection device includes a first detection module 210; the detection module 200 includes the first detection module 210.

[0152] In one embodiment, the first detection module 210 is used to generate a magnetic field detection signal; specifically, the first detection module 210 is used to detect the environmental magnetic field and generate a corresponding magnetic field detection signal.

[0153] In one specific embodiment, the first detection module 210 may be configured in terms of function or structure as the detection module 200 in any embodiment of the present invention.

[0154] In one embodiment, a first detection module 210 is disposed in a first region. The first detection module 210 is able to detect the ambient magnetic field within the first region.

[0155] The magnetic field detection device includes a second detection module 220; the detection module 200 includes the second detection module 220.

[0156] In one embodiment, the second detection module 220 is used to generate a magnetic field detection signal; specifically, the second detection module 220 is used to detect the environmental magnetic field and generate a corresponding magnetic field detection signal.

[0157] In one specific embodiment, the second detection module 220 may be configured in terms of function or structure as the detection module 200 in any embodiment of the present invention.

[0158] In one embodiment, the second detection module 220 is disposed in a second region. The second region is different from the first region. The second detection module 220 is able to detect the ambient magnetic field within the second region.

[0159] The first detection module 210 can be used to generate a first detection signal. The second detection module 220 can be used to generate a second detection signal.

[0160] The magnetic field detection signal can be determined based on the first detection signal and the second detection signal, which can comprehensively determine the state and value of the current environmental magnetic field.

[0161] For example, when the magnetic field detection signal is determined based on the difference between the first and second detection signals, the magnetic field detection signal can be used to characterize the magnetic field gradient between different regions and determine whether the environmental magnetic field is uniform. When the magnetic field detection signal is determined based on the superposition of the first and second detection signals, the magnetic field detection signal can eliminate the influence of gradients from non-uniform magnetic fields and obtain a more accurate detection of the magnetic field conditions.

[0162] like Figure 5 As shown, in the fourth embodiment provided by the present invention, the magnetic field detection device includes a first detection module 210 disposed in a first region and a second detection module 220 disposed in a second region; the detection module 200 includes the first detection module 210 and the second detection module 220. In one embodiment, the second region is different from the first region.

[0163] The output of the second detection module 220 is coupled to the output of the first detection module 210 to generate a magnetic field detection signal. Thus, a differential output can be formed by coupling the outputs together to reflect the difference between the magnetic field strength in the first region and the magnetic field strength in the second region.

[0164] In one embodiment, after the output terminals of the first detection module 210 and the second detection module 220 are coupled, they can be directly used as output nodes to output the magnetic field detection signal Vo.

[0165] In one embodiment, the magnetic field detection device further includes a first amplifier 310; the output terminal of the first detection module 210 and the output terminal of the second detection module 220 are coupled to form a node, which is coupled to the input terminal of the first amplifier 310; the output terminal of the first amplifier 310 is used to generate a magnetic field detection signal Vo.

[0166] In one embodiment, the magnetic field detection device uses the output terminal of the calibration module 100 directly as the output node to output the reference signal Vref.

[0167] In one embodiment, the magnetic field detection device further includes a second amplifier 320; the output terminal of the calibration module 100 is coupled to the input terminal of the second amplifier 320; the output terminal of the second amplifier 320 is used to generate a reference signal Vref.

[0168] like Figure 6 As shown, in the fifth embodiment provided by the present invention, the magnetic field detection device includes a first detection module 210 disposed in a first region and a second detection module 220 disposed in a second region; the detection module 200 includes the first detection module 210 and the second detection module 220. In one embodiment, the second region is different from the first region.

[0169] The magnetic field detection device also includes a first amplifier 310. The first input terminal of the first amplifier 310 is coupled to the output terminal of the first detection module 210, and the second input terminal of the first amplifier 310 is coupled to the output terminal of the second detection module 220. In this way, subtraction can be performed by the first amplifier 310, and differential output can be achieved based on the first detection signal output by the first detection module 210 and the second detection signal output by the second detection module 220.

[0170] In one embodiment, the first input terminal of the first amplifier 310 is the non-inverting input terminal of the amplifier, and the second input terminal of the first amplifier 310 is the inverting input terminal of the amplifier; in another embodiment, the first input terminal of the first amplifier 310 is the inverting input terminal of the amplifier, and the second input terminal of the first amplifier 310 is the non-inverting input terminal of the amplifier.

[0171] The output of the first amplifier 310 is used to generate the magnetic field detection signal Vo.

[0172] In one embodiment, the magnetic field detection device uses the output terminal of the calibration module 100 directly as the output node to output the reference signal Vref.

[0173] In one embodiment, the magnetic field detection device further includes a second amplifier 320; the output terminal of the calibration module 100 is coupled to the input terminal of the second amplifier 320; the output terminal of the second amplifier 320 is used to generate a reference signal Vref.

[0174] like Figure 7 As shown, in the sixth embodiment provided by the present invention, the magnetic field detection device includes a first detection module 210 disposed in a first region and a second detection module 220 disposed in a second region; the detection module 200 includes the first detection module 210 and the second detection module 220. In one embodiment, the second region is different from the first region.

[0175] The first detection module 210 is used to generate a first detection signal. The second detection module 200 is used to generate a second detection signal.

[0176] The magnetic field detection device also includes a subtractor 500, which generates a magnetic field detection signal Vo based on the first detection signal and the second detection signal. Thus, the subtractor 500 can perform subtraction operations to achieve differential output of the two detection signals.

[0177] In one embodiment, the first input terminal of the subtractor 500 is coupled to the first detection module 210, the second input terminal of the subtractor 500 is coupled to the second detection module 220, and the output terminal of the subtractor 500 is used to generate a magnetic field detection signal Vo.

[0178] In one embodiment, the magnetic field detection device includes a first amplifier 310. The input terminal of the first amplifier 310 is coupled to the output terminal of the first detection module 210, and the output terminal of the first amplifier 310 is coupled to the first input terminal of the subtractor 500.

[0179] In one embodiment, the magnetic field detection device uses the output terminal of the calibration module 100 directly as the output node to output the reference signal Vref.

[0180] In one embodiment, the magnetic field detection device further includes a second amplifier 320; the output terminal of the calibration module 100 is coupled to the input terminal of the second amplifier 320; the output terminal of the second amplifier 320 is used to generate a reference signal Vref.

[0181] In one embodiment, the magnetic field detection device includes a third amplifier 330. The input terminal of the third amplifier 330 is coupled to the output terminal of the second detection module 220, and the output terminal of the third amplifier 330 is coupled to the second input terminal of the subtractor 500.

[0182] like Figures 1 to 7 The first amplifier 310 can be configured to have an amplification factor A; the second amplifier 320 can be configured to have an amplification factor B. For example... Figure 7 The third amplifier 330 can be configured to have a magnification factor C.

[0183] like Figures 1 to 7 In any of the above technical solutions, the calibration module 100 may include a first detection unit 110.

[0184] The first detection unit 110 can be used to detect magnetic fields. In one embodiment, the first detection unit 110 includes a magnetoresistive element; in another embodiment, the first detection unit 110 includes a Hall element.

[0185] In one embodiment, the first detection unit 110 has a detection direction parallel to the plane in which the first detection unit 110 is located. For example, the first detection unit 110 may have a detection direction along a first direction X or its opposite direction; for example, the first detection unit 110 may have a detection direction along a second direction Y or its opposite direction.

[0186] In one embodiment, the first detection unit 110 has a detection direction perpendicular to the plane in which the first detection unit 110 is located. For example, the first detection unit 110 may have a detection direction along the third direction Z or its opposite direction (perpendicular to the paper and inward).

[0187] The calibration module 100 includes a first magnetic field generator 111.

[0188] A first magnetic field generator 111 is used to apply a first magnetic field to a first detection unit 110. In one embodiment, the first magnetic field generator 111 includes a coil, a magnet, or other structure configured to generate a local magnetic field. In a specific embodiment, the first magnetic field generator 111 is a coil, and when in operation, an electric current is applied to the first magnetic field generator 111 to generate the first magnetic field.

[0189] In one embodiment, the first magnetic field generator 111 is positioned close to the first detection unit 110.

[0190] In one embodiment, the first detection unit 110 is configured to generate an electrical change in a component of a magnetic field in one direction. The electrical change may include a change in resistance, a change in current flowing through the first detection unit 110, a change in voltage across the first detection unit 110, or a change in charge on the first detection unit 110. A first magnetic field generator 111 generates a first magnetic field component at least in that direction, causing the first detection unit 110 to generate the electrical change.

[0191] In one embodiment, the first magnetic field is parallel to the detection direction of the first detection unit 110.

[0192] The first magnetic field can be a calibration magnetic field used to generate the reference signal Vref. The strength of the calibration magnetic field is characterized by the value of the reference signal Vref.

[0193] The calibration module 100 may include a set of detection units and a magnetic field generator. The calibration module 100 includes only the first detection unit 110 and the first magnetic field generator 111 described above. The first magnetic field generator 111 applies a first magnetic field as a calibration magnetic field.

[0194] In other words, the magnetic field generator is used to apply a calibration magnetic field to the detection unit. The direction of the calibration magnetic field is parallel to the detection direction of the detection unit.

[0195] The calibration module 100 may also include multiple sets of detection units and magnetic field generators. For example, such as Figure 8 As shown, the calibration module 100 also includes a second detection unit 120 and a second magnetic field generator 121.

[0196] The second detection unit 120 can be used to detect magnetic fields. In one embodiment, the second detection unit 120 includes a magnetoresistive element; in another embodiment, the second detection unit 120 includes a Hall element.

[0197] In one embodiment, the second detection unit 120 has a detection direction parallel to the plane in which the second detection unit 120 is located. For example, the second detection unit 120 may have a detection direction along a first direction X or its opposite direction; for example, the second detection unit 120 may have a detection direction along a second direction Y or its opposite direction.

[0198] In one embodiment, the second detection unit 120 has a detection direction perpendicular to the plane in which the second detection unit 120 is located. For example, the second detection unit 120 may have a detection direction along the third direction Z or its opposite direction (perpendicular to the paper and inward).

[0199] The calibration module 100 includes a second magnetic field generator 121.

[0200] The second magnetic field generator 121 is used to apply a second magnetic field to the second detection unit 120. In one embodiment, the second magnetic field generator 121 includes a coil, a magnet, or other structure configured to generate a local magnetic field. In a specific embodiment, the second magnetic field generator 121 is a coil, and when in operation, a current is applied to the second magnetic field generator 121 to generate the second magnetic field.

[0201] In one embodiment, the second magnetic field generator 121 is positioned close to the second detection unit 120.

[0202] In one embodiment, the second detection unit 120 is configured to generate an electrical change in a component of the magnetic field in one direction. The electrical change may include a change in resistance, a change in current flowing through the second detection unit 120, a change in voltage across the second detection unit 120, or a change in the charge carried by the second detection unit 120. A second magnetic field generator 121 generates a second magnetic field component at least in that direction, causing the second detection unit 120 to generate the aforementioned electrical change.

[0203] In one embodiment, the second magnetic field is parallel to the detection direction of the second detection unit 120.

[0204] In one embodiment, the first detection unit 110 is coupled to the second detection unit 120 to prevent the calibration module 100 from generating an output in response to the ambient magnetic field.

[0205] The second detection unit 120 may be included in the detection unit, the second magnetic field generator 121 may be included in the magnetic field generator, and the second magnetic field may be included in the calibration magnetic field.

[0206] In one embodiment, the second magnetic field includes a magnetic field component that is opposite in direction to the first magnetic field; or, the first magnetic field includes a magnetic field component that is opposite in direction to the second magnetic field.

[0207] In one embodiment, the first magnetic field has a single magnetic field direction, the second magnetic field has a single magnetic field direction, and the direction of the first magnetic field is opposite to the direction of the second magnetic field.

[0208] In one embodiment, the strength of the first magnetic field is equal to the strength of the second magnetic field.

[0209] The second detection unit 120 and the first detection unit 110 have a preset positional relationship.

[0210] The preset positional relationship can refer to the coupling relationship between the first detection unit 110 and the second detection unit 120. The coupling relationship can be used to reflect the relationship between the signal at the first detection unit 110 and the signal at the second detection unit 120, or to reflect the relationship between the current / voltage at the first detection unit 110 and the current / voltage at the second detection unit 120.

[0211] The preset positional relationship includes the relationship between the position of the first detection unit 110 relative to the power supply end and the position of the second detection unit 120 relative to the power supply end.

[0212] For example, Figure 9In the illustrated embodiment, the first detection unit 110 includes a first magnetoresistive resistor R1, which is located relatively close to the power supply terminal Vd; the second detection unit 120 includes a second magnetoresistive resistor R2, which is located relatively far from the power supply terminal Vd.

[0213] For example, Figure 10 , Figure 11 , Figure 13 , Figure 15 , Figure 16 In the embodiment shown, the first detection unit 110 includes a first magnetoresistive resistor R1, which is located on the side relatively close to the power supply terminal Vd; the second detection unit 120 includes a second magnetoresistive resistor R2, which is located on the side relatively close to the power supply terminal Vd.

[0214] For example, Figure 18 In the embodiment shown, the first detection unit 110 includes a first Hall unit H1, and the first end e11 of the first Hall unit H1 is coupled to the power supply terminal Vd; the second detection unit 120 includes a second Hall unit H2, and the first end e21 of the second Hall unit H2 is coupled to the power supply terminal Vd.

[0215] The preset positional relationship includes the relationship between the position of the first detection unit 110 relative to the grounding end and the position of the second detection unit 120 relative to the grounding end.

[0216] For example, Figure 9 In the illustrated embodiment, the first detection unit 110 includes a first magnetoresistive resistor R1, which is located on the side relatively far from the ground terminal GND; the second detection unit 120 includes a second magnetoresistive resistor R2, which is located on the side relatively close to the ground terminal GND.

[0217] For example, Figure 10 , Figure 11 , Figure 13 , Figure 15 , Figure 16 In the embodiment shown, the first detection unit 110 includes a first magnetoresistive resistor R1, which is located on the side relatively far from the grounding terminal GND; the second detection unit 120 includes a second magnetoresistive resistor R2, which is located on the side relatively far from the grounding terminal GND.

[0218] For example, Figure 18 In the embodiment shown, the first detection unit 110 includes a first Hall unit H1, and the second end e12 of the first Hall unit H1 is coupled to the ground terminal GND; the second detection unit 120 includes a second Hall unit H2, and the second end e22 of the second Hall unit H2 is coupled to the ground terminal GND.

[0219] The calibration module is used to generate a reference signal Vref. The reference signal Vref is independent of the uniform ambient magnetic field. Thus, the reference signal Vref is independent of the ambient magnetic field, eliminating the need to adjust the current based on the strength of the ambient magnetic field. This avoids excessive power consumption and poor power supply capabilities that could compress the magnetic field detection range, and enables more accurate magnetic field detection sensitivity calibration.

[0220] In one specific embodiment, the reference signal Vref is also independent of the non-uniform ambient magnetic field.

[0221] In one specific embodiment, the reference signal Vref is related only to the first magnetic field and the second magnetic field.

[0222] In one specific embodiment, based on the positional relationship between the first detection unit 110 and the second detection unit 120, a first magnetic field is applied to the first detection unit 110, and a second magnetic field containing a magnetic field component opposite in direction to the first magnetic field is applied to the second detection unit 120, so that the reference signal Vref is independent of the uniform ambient magnetic field.

[0223] In this way, the calibration module can provide a reference signal independent of the ambient magnetic field, avoiding the impact of power consumption on the magnetic field detection calibration process in existing technologies. This enables accurate detection of magnetic field strength over a wider range and ensures the elimination of linearity errors. Furthermore, since the calibration module does not rely on the detection module used to detect the magnetic field under test, it does not affect the operation of the detection module and is more conducive to adapting to high-bandwidth application scenarios.

[0224] Figure 9 The structure of the calibration module 100 in the first embodiment of the present invention is shown.

[0225] The calibration module 100 includes a first magnetoresistive resistor R1.

[0226] The calibration module 100 includes a second magnetoresistive resistor R2.

[0227] In one embodiment, the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd; the first end of the second magnetoresistor R2 is coupled to the second end of the first magnetoresistor R1; and the second end of the second magnetoresistor R2 is coupled to the ground terminal GND.

[0228] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the first magnetoresistive R1.

[0229] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the second magnetoresistive R2.

[0230] In one embodiment, an output node is included between the second end of the first magnetoresistor R1 and the first end of the second magnetoresistor R2, and the output node is used to output the calibration signal.

[0231] In this way, a calibration module can be constructed by forming a half-bridge structure through magnetoresistive coupling to achieve calibration of the magnetic field detection process.

[0232] Magnetoresistance can exhibit a positive magnetoresistance effect (+ΔR) or a negative magnetoresistance effect (-ΔR). When a magnetoresistance exhibits a positive magnetoresistance effect (+ΔR), its resistance increases with increasing magnetic field strength and decreases with decreasing magnetic field strength. When a magnetoresistance exhibits a negative magnetoresistance effect (-ΔR), its resistance increases with decreasing magnetic field strength and decreases with increasing magnetic field strength.

[0233] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistance effect of +ΔR, and the second magnetoresistive R2 has a positive magnetoresistance effect of +ΔR.

[0234] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistance effect -ΔR, and the second magnetoresistive R2 has a negative magnetoresistance effect -ΔR.

[0235] The calibration module 100 also includes a first magnetic field generator 111.

[0236] The calibration module 100 also includes a second magnetic field generator 121.

[0237] The first magnetic field generator 111 is used to apply a first magnetic field to the first magnetoresistive resistor R1.

[0238] The second magnetic field generator 121 is used to apply a second magnetic field to the second magnetoresistive resistor R2. The second magnetic field includes a magnetic field component that is opposite in direction to the first magnetic field.

[0239] For example, the first magnetic field generator 111 applies a first magnetic field Br to the first magnetoresistor R1, and the second magnetic field generator 121 applies a second magnetic field -Br to the second magnetoresistor R2. Since the resistance changes of the first magnetoresistor R1 and the second magnetoresistor R2 in response to the magnetic field are in the same direction, the half-bridge structure formed by coupling does not produce an output for a uniform ambient magnetic field. Furthermore, since the first magnetic field Br and the second magnetic field -Br used to generate the calibration signal are in opposite directions, the half-bridge structure formed by coupling can generate a calibration signal with a voltage value V1 that is independent of the uniform ambient magnetic field.

[0240] Figure 10 and Figure 11 The structure of the calibration module 100 in the second and third embodiments of the present invention is shown.

[0241] The calibration module 100 includes a first magnetoresistive resistor R1.

[0242] The calibration module 100 includes a second magnetoresistive resistor R2.

[0243] The second magnetoresistor R2 and the first magnetoresistor have a preset positional relationship.

[0244] In one embodiment, such as Figure 10 (b) and Figure 11 As shown in (c), the preset positional relationship satisfies the following: the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd; the first end of the second magnetoresistor R2 is coupled to the power supply segment Vd.

[0245] In one embodiment, the preset positional relationship satisfies the following: the second end of the first magnetoresistive R1 is coupled to the ground terminal GND; the second end of the second magnetoresistive R2 is coupled to the ground terminal GND.

[0246] The second magnetoresistive resistor R2 and the first magnetoresistive resistor have a preset magnetoresistive effect relationship.

[0247] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistance effect of +ΔR, and the second magnetoresistive R2 has a positive magnetoresistance effect of +ΔR.

[0248] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistance effect -ΔR, and the second magnetoresistive R2 has a negative magnetoresistance effect -ΔR.

[0249] In a preferred embodiment, such as Figure 10 As shown, the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistor R2 is coupled to the power supply segment Vd; and the first magnetoresistor R1 has a positive magnetoresistive effect +ΔR, and the second magnetoresistor R2 has a positive magnetoresistive effect +ΔR.

[0250] In a preferred embodiment, such as Figure 11 As shown, the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistor R2 is coupled to the power supply segment Vd; and the first magnetoresistor R1 has a negative magnetoresistance effect -ΔR, and the second magnetoresistor R2 has a negative magnetoresistance effect -ΔR.

[0251] The calibration module 100 also includes a first magnetic field generator 111.

[0252] The calibration module 100 also includes a second magnetic field generator 121.

[0253] The first magnetic field generator 111 is used to apply a first magnetic field to the first magnetoresistive resistor R1.

[0254] The second magnetic field generator 121 is used to apply a second magnetic field to the second magnetoresistive resistor R2. The second magnetic field includes a magnetic field component that is opposite in direction to the first magnetic field.

[0255] In this way, the magnetoresistive relationship between the two magnetoresistors and the corresponding applied calibration magnetic field, which includes opposite magnetic field components, can be used to achieve no output to the ambient magnetic field through mutual comparison.

[0256] Figure 10A second embodiment provided by the present invention is shown.

[0257] like Figure 10 In (a), the calibration module 100 also includes a third magnetoresistive resistor R3.

[0258] The first end of the third magnetoresistor R3 is coupled to the second end of the first magnetoresistor R1, and the second end of the third magnetoresistor R3 is coupled to the ground terminal GND.

[0259] The first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd.

[0260] This forms a magnetoresistive configuration with a half-bridge structure.

[0261] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the first magnetoresistive R1.

[0262] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the third magnetoresistor R3.

[0263] In one embodiment, an output node is included between the second end of the first magnetoresistive R1 and the first end of the third magnetoresistive R3, the output node being used to generate the calibration signal.

[0264] There is a pre-defined magnetoresistive effect relationship between the third magnetoresistive resistor R3 and the first magnetoresistive resistor R1.

[0265] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect -ΔR, and the third magnetoresistive R3 has a positive magnetoresistive effect +ΔR.

[0266] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistive effect of +ΔR, and the third magnetoresistive R3 has a negative magnetoresistive effect of -ΔR.

[0267] In one embodiment, a first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistive resistor R3. The third magnetic field includes a magnetic field component with the same direction as the first magnetic field. In a specific embodiment, the third magnetic field is the same as the first magnetic field.

[0268] like Figure 10 The calibration module 100 also includes a fourth magnetoresistive resistor R4.

[0269] The first end of the fourth magnetoresistor R4 is coupled to the second end of the second magnetoresistor R2, and the second end of the fourth magnetoresistor R4 is coupled to the ground terminal GND.

[0270] The first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0271] Thus, the second detection unit 120 has a magnetoresistive configuration with a half-bridge structure.

[0272] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the second magnetoresistive R2.

[0273] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the fourth magnetoresistive R4.

[0274] In one embodiment, an output node is included between the second end of the second magnetoresistor R2 and the first end of the fourth magnetoresistor R4, the output node being used to generate the calibration signal.

[0275] There is a pre-defined magnetoresistive effect relationship between the fourth magnetoresistive resistor R4 and the second magnetoresistive resistor R2.

[0276] In one embodiment, the second magnetoresistive R2 has a negative magnetoresistance effect of -ΔR, and the fourth magnetoresistive R4 has a positive magnetoresistance effect of +ΔR.

[0277] In one embodiment, the second magnetoresistive R2 has a positive magnetoresistance effect of +ΔR, and the fourth magnetoresistive R4 has a negative magnetoresistance effect of -ΔR.

[0278] In one embodiment, the second magnetic field generator 121 is used to apply a fourth magnetic field to the fourth magnetoresistive resistor R4. The fourth magnetic field includes a magnetic field component with the same direction as the second magnetic field. In a specific embodiment, the fourth magnetic field is the same as the second magnetic field.

[0279] The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the fourth magnetic field is opposite in direction to the third magnetic field but has the same intensity.

[0280] In this second embodiment, the preset positional relationship is as follows: the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0281] A first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistor R3, and a second magnetic field generator 121 is used to apply a fourth magnetic field to a fourth magnetoresistor R4. The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the fourth magnetic field has the same strength as the third magnetic field but is opposite in direction.

[0282] In one specific embodiment, such as Figure 10 In (b), the first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, the second magnetoresistive R2 has a negative magnetoresistive effect of -ΔR, the third magnetoresistive R3 has a positive magnetoresistive effect of +ΔR, and the fourth magnetoresistive R4 has a positive magnetoresistive effect of +ΔR.

[0283] Four magnetoresistors are coupled to form a full-bridge structure, which can use the voltage value V1 at the second terminal of the first magnetoresistor R1 and the voltage value V2 at the second terminal of the second magnetoresistor R2 as outputs. Specifically, the full-bridge structure can use the difference between the voltage values ​​V1 and V2 as outputs to generate the calibration signal.

[0284] For example, the first magnetic field generator 111 applies a first magnetic field Br to the first magnetoresistor R1, the second magnetic field generator 121 applies a second magnetic field -Br to the second magnetoresistor R2, the first magnetic field generator 111 applies a first magnetic field Br to the third magnetoresistor R3, and the second magnetic field generator 121 applies a second magnetic field -Br to the fourth magnetoresistor R4. Since the resistance changes of the first magnetoresistor R1 and the third magnetoresistor R3 in response to the magnetic field are opposite (the same applies to the second magnetoresistor R2 and the fourth magnetoresistor R4), and since the resistance changes of the first magnetoresistor R1 and the second magnetoresistor R2 in response to the magnetic field are in the same direction, the coupled full-bridge structure can generate a calibration signal independent of the uniform ambient magnetic field; this calibration signal has a voltage value (V1-V2).

[0285] Figure 11 The third embodiment provided by the present invention is shown.

[0286] like Figure 11 In (a), the calibration module 100 also includes a third magnetoresistive resistor R3.

[0287] The first end of the third magnetoresistor R3 is coupled to the second end of the first magnetoresistor R1, and the second end of the third magnetoresistor R3 is coupled to the ground terminal GND.

[0288] The first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd.

[0289] This forms a magnetoresistive configuration with a half-bridge structure.

[0290] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the first magnetoresistive R1.

[0291] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the third magnetoresistor R3.

[0292] In one embodiment, an output node is included between the second end of the first magnetoresistive R1 and the first end of the third magnetoresistive R3, the output node being used to generate the calibration signal.

[0293] There is a pre-defined magnetoresistive effect relationship between the third magnetoresistive resistor R3 and the first magnetoresistive resistor R1.

[0294] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect -ΔR, and the third magnetoresistive R3 has a positive magnetoresistive effect +ΔR.

[0295] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistive effect of +ΔR, and the third magnetoresistive R3 has a negative magnetoresistive effect of -ΔR.

[0296] In one embodiment, a first magnetic field generator 111 is used to apply a fourth magnetic field to a fourth magnetoresistive resistor R4. The fourth magnetic field includes a magnetic field component with the same direction as the first magnetic field. In a specific embodiment, the fourth magnetic field is the same as the first magnetic field.

[0297] like Figure 11 The calibration module 100 also includes a fourth magnetoresistive resistor R4.

[0298] The first end of the fourth magnetoresistor R4 is coupled to the second end of the second magnetoresistor R2, and the second end of the fourth magnetoresistor R4 is coupled to the ground terminal GND.

[0299] The first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0300] Thus, the second detection unit 120 has a magnetoresistive configuration with a half-bridge structure.

[0301] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the second magnetoresistive R2.

[0302] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the fourth magnetoresistive R4.

[0303] In one embodiment, an output node is included between the second end of the second magnetoresistor R2 and the first end of the fourth magnetoresistor R4, the output node being used to generate the calibration signal.

[0304] There is a pre-defined magnetoresistive effect relationship between the fourth magnetoresistive resistor R4 and the second magnetoresistive resistor R2.

[0305] In one embodiment, the second magnetoresistive R2 has a negative magnetoresistance effect of -ΔR, and the fourth magnetoresistive R4 has a positive magnetoresistance effect of +ΔR.

[0306] In one embodiment, the second magnetoresistive R2 has a positive magnetoresistance effect of +ΔR, and the fourth magnetoresistive R4 has a negative magnetoresistance effect of -ΔR.

[0307] In one embodiment, the second magnetic field generator 121 is used to apply a third magnetic field to the third magnetoresistive resistor R3. The third magnetic field includes a magnetic field component with the same direction as the second magnetic field. In a specific embodiment, the third magnetic field is the same as the second magnetic field.

[0308] The third magnetic field includes a magnetic field component that is opposite in direction to the fourth magnetic field. In one specific embodiment, the third magnetic field and the fourth magnetic field are opposite in direction but have the same intensity.

[0309] The third magnetic field includes a magnetic field component that is in the same direction as the first magnetic field. In one specific embodiment, the third magnetic field is in the opposite direction to the first magnetic field but has the same intensity.

[0310] In this second embodiment, the preset positional relationship is as follows: the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0311] A first magnetic field generator 111 is used to apply a fourth magnetic field to a fourth magnetoresistor R4, and a second magnetic field generator 121 is used to apply a third magnetic field to a third magnetoresistor R3. The third magnetic field includes a magnetic field component that is opposite in direction to the fourth magnetic field. In one specific embodiment, the third magnetic field and the fourth magnetic field have equal strength but opposite directions.

[0312] In one specific embodiment, such as Figure 11 In (b), the first magnetoresistive R1 has a positive magnetoresistive effect of +ΔR, the second magnetoresistive R2 has a positive magnetoresistive effect of +ΔR, the third magnetoresistive R3 has a positive magnetoresistive effect of +ΔR, and the fourth magnetoresistive R4 has a positive magnetoresistive effect of +ΔR.

[0313] Four magnetoresistors are coupled to form a full-bridge structure, which can use the voltage value V1 at the second terminal of the first magnetoresistor R1 and the voltage value V2 at the second terminal of the second magnetoresistor R2 as outputs. Specifically, the full-bridge structure can use the difference between the voltage values ​​V1 and V2 as outputs to generate the calibration signal.

[0314] For example, the first magnetic field generator 111 applies a first magnetic field Br to the first magnetoresistor R1, the second magnetic field generator 121 applies a second magnetic field -Br to the second magnetoresistor R2, the first magnetic field generator 111 applies a first magnetic field Br to the fourth magnetoresistor R4, and the second magnetic field generator 121 applies a second magnetic field -Br to the third magnetoresistor R3. Since the resistance changes of the first magnetoresistor R1 and the third magnetoresistor R3 in response to the magnetic field are in the same direction (the same applies to the second magnetoresistor R2 and the fourth magnetoresistor R4), and since the resistance changes of the first magnetoresistor R1 and the second magnetoresistor R2 in response to the magnetic field are in the same direction, the full-bridge structure formed by coupling can generate a calibration signal independent of the uniform ambient magnetic field; this calibration signal has a voltage value (V1-V2).

[0315] Figure 12 and Figure 13 The structure of the calibration module 100 in the fourth embodiment of the present invention is shown.

[0316] The calibration module 100 includes a first magnetoresistive resistor R1, a third magnetoresistive resistor R3, a fifth magnetoresistive resistor R5, and a seventh magnetoresistive resistor R7.

[0317] The first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd.

[0318] The first end of the third magnetoresistor R3 is coupled to the second end of the first magnetoresistor R1, and the second end of the third magnetoresistor R3 is coupled to the ground terminal GND.

[0319] The first end of the fifth magnetor R5 is coupled to the power supply terminal Vd.

[0320] The first end of the seventh magnetoresistor R7 is coupled to the second end of the fifth magnetoresistor R5, and the second end of the seventh magnetoresistor R7 is coupled to the ground terminal GND.

[0321] This creates a magnetoresistive configuration for a full-bridge structure. This full-bridge structure does not produce an output in response to a uniform ambient magnetic field.

[0322] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the first magnetoresistive R1.

[0323] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the third magnetoresistor R3.

[0324] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the fifth magnetoresistive R5.

[0325] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the seventh magnetoresistor R7.

[0326] In one embodiment, an output node is included between the second end of the first magnetoresistive R1 and the first end of the third magnetoresistive R3, the output node being used to generate the calibration signal.

[0327] In one embodiment, an output node is included between the second end of the fifth magnetoresistor R5 and the first end of the seventh magnetoresistor R7, the output node being used to generate the calibration signal.

[0328] In one embodiment, the second end of the first magnetoresistive R1 is coupled to the second end of the fifth magnetoresistive R5 to generate the calibration signal.

[0329] In one embodiment, the first end of the third magnetoresistor R3 is coupled to the first end of the seventh magnetoresistor R7 to generate the calibration signal.

[0330] There is a preset magnetoresistive effect relationship between the first magnetoresistive resistor R1, the third magnetoresistive resistor R3, the fifth magnetoresistive resistor R5, and the seventh magnetoresistive resistor R7.

[0331] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, the third magnetoresistive R3 has a positive magnetoresistive effect of +ΔR, the fifth magnetoresistive R5 has a negative magnetoresistive effect of -ΔR, and the seventh magnetoresistive R7 has a positive magnetoresistive effect of +ΔR.

[0332] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistance effect of +ΔR, the third magnetoresistive R3 has a negative magnetoresistance effect of -ΔR, the fifth magnetoresistive R5 has a positive magnetoresistance effect of +ΔR, and the seventh magnetoresistive R7 has a negative magnetoresistance effect of -ΔR.

[0333] In one embodiment, a first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistive resistor R3. The third magnetic field includes a magnetic field component with the same direction as the first magnetic field. In a specific embodiment, the third magnetic field is the same as the first magnetic field.

[0334] In one embodiment, a first magnetic field generator 111 is used to apply a fifth magnetic field to a fifth magnetoresistive resistor R5. The fifth magnetic field includes a magnetic field component with the same direction as the first magnetic field. In a specific embodiment, the fifth magnetic field is the same as the first magnetic field.

[0335] In one embodiment, a first magnetic field generator 111 is used to apply a seventh magnetic field to a seventh magnetoresistive resistor R7. The seventh magnetic field includes a magnetic field component with the same direction as the fifth magnetic field. In a specific embodiment, the seventh magnetic field is the same as the fifth magnetic field.

[0336] like Figure 13 The calibration module 100 includes a second magnetoresistor R2, a fourth magnetoresistor R4, a sixth magnetoresistor R6, and an eighth magnetoresistor R8.

[0337] The first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0338] The first end of the fourth magnetoresistor R4 is coupled to the second end of the second magnetoresistor R2, and the second end of the fourth magnetoresistor R4 is coupled to the ground terminal GND.

[0339] The first end of the sixth magnetor R6 is coupled to the power supply terminal Vd.

[0340] The first end of the eighth magnetor R8 is coupled to the second end of the sixth magnetor R6, and the second end of the eighth magnetor R8 is coupled to the ground terminal GND.

[0341] This results in a magnetoresistive configuration for a full-bridge structure.

[0342] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the second magnetoresistive R2.

[0343] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the fourth magnetoresistive R4.

[0344] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the sixth magnetoresistor R6.

[0345] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the eighth magnetor R8.

[0346] In one embodiment, an output node is included between the second end of the second magnetoresistor R2 and the first end of the fourth magnetoresistor R4, the output node being used to generate the calibration signal.

[0347] In one embodiment, an output node is included between the second end of the sixth magnetoresistor R6 and the first end of the eighth magnetoresistor R8, the output node being used to generate the calibration signal.

[0348] In one embodiment, the second end of the second magnetoresistor R2 is coupled to the second end of the sixth magnetoresistor R6 to generate the calibration signal.

[0349] In one embodiment, the first end of the fourth magnetoresistor R4 is coupled to the first end of the eighth magnetoresistor R8 to generate the calibration signal.

[0350] There is a preset magnetoresistive effect relationship between the second magnetoresistive R2, the fourth magnetoresistive R4, the sixth magnetoresistive R6, and the eighth magnetoresistive R8.

[0351] In one embodiment, the second magnetoresistive R2 has a negative magnetoresistance effect of -ΔR, the fourth magnetoresistive R4 has a positive magnetoresistance effect of +ΔR, the sixth magnetoresistive R6 has a negative magnetoresistance effect of -ΔR, and the eighth magnetoresistive R8 has a positive magnetoresistance effect of +ΔR.

[0352] In one embodiment, the second magnetoresistive R2 has a positive magnetoresistance effect of +ΔR, the fourth magnetoresistive R4 has a negative magnetoresistance effect of -ΔR, the sixth magnetoresistive R6 has a positive magnetoresistance effect of +ΔR, and the eighth magnetoresistive R8 has a negative magnetoresistance effect of -ΔR.

[0353] In one embodiment, the second magnetic field generator 121 is used to apply a fourth magnetic field to the fourth magnetoresistive resistor R4. The fourth magnetic field includes a magnetic field component with the same direction as the second magnetic field. In a specific embodiment, the fourth magnetic field is the same as the second magnetic field.

[0354] The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the fourth magnetic field is opposite in direction to the third magnetic field but has the same intensity.

[0355] In one embodiment, the second magnetic field generator 121 is used to apply a sixth magnetic field to the sixth magnetoresistive resistor R6. The sixth magnetic field includes a magnetic field component with the same direction as the second magnetic field. In a specific embodiment, the sixth magnetic field is the same as the second magnetic field.

[0356] The sixth magnetic field includes a magnetic field component that is opposite in direction to the fifth magnetic field. In one specific embodiment, the sixth magnetic field is opposite in direction to the fifth magnetic field but has the same intensity.

[0357] In one embodiment, the second magnetic field generator 121 is used to apply an eighth magnetic field to the eighth magnetoresistive resistor R8. The eighth magnetic field includes a magnetic field component with the same direction as the sixth magnetic field. In a specific embodiment, the eighth magnetic field is the same as the sixth magnetic field.

[0358] The eighth magnetic field includes a magnetic field component that is opposite to that of the seventh magnetic field. In one specific embodiment, the eighth magnetic field is opposite in direction and equal in intensity to the seventh magnetic field.

[0359] In this fourth embodiment, the preset positional relationship is as follows: the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0360] A first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistor R3, and a second magnetic field generator 121 is used to apply a fourth magnetic field to a fourth magnetoresistor R4. The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the third magnetic field and the fourth magnetic field have equal strength but opposite directions.

[0361] A first magnetic field generator 111 is used to apply a fifth magnetic field to a fifth magnetoresistor R5, and a second magnetic field generator 121 is used to apply a sixth magnetic field to a sixth magnetoresistor R6. The sixth magnetic field includes a magnetic field component that is opposite in direction to the fifth magnetic field. In one specific embodiment, the sixth magnetic field has the same strength but opposite direction to the fifth magnetic field.

[0362] A first magnetic field generator 111 is used to apply a seventh magnetic field to a seventh magnetoresistor R7, and a second magnetic field generator 121 is used to apply an eighth magnetic field to an eighth magnetoresistor R8. The eighth magnetic field includes a magnetic field component that is opposite in direction to the seventh magnetic field. In one specific embodiment, the eighth magnetic field has the same strength as the seventh magnetic field but is opposite in direction.

[0363] In one specific embodiment, such as Figure 13 The first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, the second magnetoresistive R2 has a negative magnetoresistive effect of -ΔR, the third magnetoresistive R3 has a positive magnetoresistive effect of +ΔR, the fourth magnetoresistive R4 has a positive magnetoresistive effect of +ΔR, the fifth magnetoresistive R5 has a negative magnetoresistive effect of -ΔR, the sixth magnetoresistive R6 has a negative magnetoresistive effect of -ΔR, the seventh magnetoresistive R7 has a positive magnetoresistive effect of +ΔR, and the eighth magnetoresistive R8 has a positive magnetoresistive effect of +ΔR.

[0364] Eight magnetoresistors are coupled to form a dual full-bridge structure, which can use the voltage value V2 at the coupling point between the second terminal of the first magnetoresistor R1 and the second terminal of the fifth magnetoresistor R5, and the voltage value V1 at the coupling point between the second terminal of the second magnetoresistor R2 and the second terminal of the sixth magnetoresistor R6 as the output. Specifically, the full-bridge structure can use the difference between the above voltage values ​​V1 and V2 as the output to generate the calibration signal.

[0365] For example, the first magnetic field generator 111 applies a first magnetic field Br to the first magnetoresistor R1, the second magnetic field generator 121 applies a second magnetic field -Br to the second magnetoresistor R2, the first magnetic field generator 111 applies a first magnetic field Br to the third magnetoresistor R3, the second magnetic field generator 121 applies a second magnetic field -Br to the fourth magnetoresistor R4, the first magnetic field generator 111 applies a first magnetic field Br to the fifth magnetoresistor R5, the second magnetic field generator 121 applies a second magnetic field -Br to the sixth magnetoresistor R6, the first magnetic field generator 111 applies a first magnetic field Br to the seventh magnetoresistor R7, and the second magnetic field generator 121 applies a second magnetic field -Br to the eighth magnetoresistor R8. Since the calibration module 100 does not generate an output for uniform ambient magnetic fields, the coupled dual full-bridge structure can generate a calibration signal independent of uniform ambient magnetic fields; this calibration signal has voltage values ​​(V1-V2).

[0366] Figure 14 and Figure 15 The structure of the calibration module 100 in the fifth embodiment of the present invention is shown.

[0367] The calibration module 100 includes a first magnetoresistive resistor R1, a third magnetoresistive resistor R3, a fifth magnetoresistive resistor R5, and a seventh magnetoresistive resistor R7.

[0368] The first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd.

[0369] The first end of the third magnetoresistor R3 is coupled to the second end of the first magnetoresistor R1, and the second end of the third magnetoresistor R3 is coupled to the ground terminal GND.

[0370] The first end of the fifth magnetor R5 is coupled to the power supply terminal Vd.

[0371] The first end of the seventh magnetoresistor R7 is coupled to the second end of the fifth magnetoresistor R5, and the second end of the seventh magnetoresistor R7 is coupled to the ground terminal GND.

[0372] This results in a magnetoresistive configuration for a full-bridge structure.

[0373] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the first magnetoresistive R1.

[0374] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the third magnetoresistor R3.

[0375] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the fifth magnetoresistive R5.

[0376] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the seventh magnetoresistor R7.

[0377] In one embodiment, an output node is included between the second end of the first magnetoresistive R1 and the first end of the third magnetoresistive R3, the output node being used to generate the calibration signal.

[0378] In one embodiment, an output node is included between the second end of the fifth magnetoresistor R5 and the first end of the seventh magnetoresistor R7, the output node being used to generate the calibration signal.

[0379] There is a preset magnetoresistive effect relationship between the first magnetoresistive resistor R1, the third magnetoresistive resistor R3, the fifth magnetoresistive resistor R5, and the seventh magnetoresistive resistor R7.

[0380] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, the third magnetoresistive R3 has a positive magnetoresistive effect of +ΔR, the fifth magnetoresistive R5 has a positive magnetoresistive effect of +ΔR, and the seventh magnetoresistive R7 has a negative magnetoresistive effect of -ΔR.

[0381] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistive effect of +ΔR, the third magnetoresistive R3 has a negative magnetoresistive effect of -ΔR, the fifth magnetoresistive R5 has a negative magnetoresistive effect of -ΔR, and the seventh magnetoresistive R7 has a positive magnetoresistive effect of +ΔR.

[0382] In one embodiment, a first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistive resistor R3. The third magnetic field includes a magnetic field component with the same direction as the first magnetic field. In a specific embodiment, the third magnetic field is the same as the first magnetic field.

[0383] In one embodiment, a first magnetic field generator 111 is used to apply a fifth magnetic field to a fifth magnetoresistive resistor R5. The fifth magnetic field includes a magnetic field component with the same direction as the first magnetic field. In a specific embodiment, the fifth magnetic field is the same as the first magnetic field.

[0384] In one embodiment, a first magnetic field generator 111 is used to apply a seventh magnetic field to a seventh magnetoresistive resistor R7. The seventh magnetic field includes a magnetic field component with the same direction as the fifth magnetic field. In a specific embodiment, the seventh magnetic field is the same as the fifth magnetic field.

[0385] like Figure 15 The calibration module 100 includes a second magnetoresistor R2, a fourth magnetoresistor R4, a sixth magnetoresistor R6, and an eighth magnetoresistor R8.

[0386] The first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0387] The first end of the fourth magnetoresistor R4 is coupled to the second end of the second magnetoresistor R2, and the second end of the fourth magnetoresistor R4 is coupled to the ground terminal GND.

[0388] The first end of the sixth magnetor R6 is coupled to the power supply terminal Vd.

[0389] The first end of the eighth magnetor R8 is coupled to the second end of the sixth magnetor R6, and the second end of the eighth magnetor R8 is coupled to the ground terminal GND.

[0390] This results in a magnetoresistive configuration for a full-bridge structure.

[0391] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the second magnetoresistive R2.

[0392] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the fourth magnetoresistive R4.

[0393] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the sixth magnetoresistor R6.

[0394] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the eighth magnetor R8.

[0395] In one embodiment, an output node is included between the second end of the second magnetoresistor R2 and the first end of the fourth magnetoresistor R4, the output node being used to generate the calibration signal.

[0396] In one embodiment, an output node is included between the second end of the sixth magnetoresistor R6 and the first end of the eighth magnetoresistor R8, the output node being used to generate the calibration signal.

[0397] There is a preset magnetoresistive effect relationship between the second magnetoresistive R2, the fourth magnetoresistive R4, the sixth magnetoresistive R6, and the eighth magnetoresistive R8.

[0398] In one embodiment, the second magnetoresistive R2 has a negative magnetoresistance effect of -ΔR, the fourth magnetoresistive R4 has a positive magnetoresistance effect of +ΔR, the sixth magnetoresistive R6 has a positive magnetoresistance effect of +ΔR, and the eighth magnetoresistive R8 has a negative magnetoresistance effect of -ΔR.

[0399] In one embodiment, the second magnetoresistive R2 has a positive magnetoresistance effect of +ΔR, the fourth magnetoresistive R4 has a negative magnetoresistance effect of -ΔR, the sixth magnetoresistive R6 has a negative magnetoresistance effect of -ΔR, and the eighth magnetoresistive R8 has a positive magnetoresistance effect of +ΔR.

[0400] In one embodiment, the second magnetic field generator 121 is used to apply a fourth magnetic field to the fourth magnetoresistive resistor R4. The fourth magnetic field includes a magnetic field component with the same direction as the second magnetic field. In a specific embodiment, the fourth magnetic field is the same as the second magnetic field.

[0401] The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the fourth magnetic field is opposite in direction to the third magnetic field but has the same intensity.

[0402] In one embodiment, the second magnetic field generator 121 is used to apply a sixth magnetic field to the sixth magnetoresistive resistor R6. The sixth magnetic field includes a magnetic field component with the same direction as the second magnetic field. In a specific embodiment, the sixth magnetic field is the same as the second magnetic field.

[0403] The sixth magnetic field includes a magnetic field component that is opposite in direction to the fifth magnetic field. In one specific embodiment, the sixth magnetic field is opposite in direction to the fifth magnetic field but has the same intensity.

[0404] In one embodiment, the second magnetic field generator 121 is used to apply an eighth magnetic field to the eighth magnetoresistive resistor R8. The eighth magnetic field includes a magnetic field component with the same direction as the sixth magnetic field. In a specific embodiment, the eighth magnetic field is the same as the sixth magnetic field.

[0405] The eighth magnetic field includes a magnetic field component that is opposite to that of the seventh magnetic field. In one specific embodiment, the eighth magnetic field is opposite in direction and equal in intensity to the seventh magnetic field.

[0406] In this fifth embodiment, the preset positional relationship is as follows: the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0407] A first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistor R3, and a second magnetic field generator 121 is used to apply a fourth magnetic field to a fourth magnetoresistor R4. The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the third magnetic field and the fourth magnetic field have equal strength but opposite directions.

[0408] A first magnetic field generator 111 is used to apply a fifth magnetic field to a fifth magnetoresistor R5, and a second magnetic field generator 121 is used to apply a sixth magnetic field to a sixth magnetoresistor R6. The sixth magnetic field includes a magnetic field component that is opposite in direction to the fifth magnetic field. In one specific embodiment, the sixth magnetic field has the same strength but opposite direction to the fifth magnetic field.

[0409] A first magnetic field generator 111 is used to apply a seventh magnetic field to a seventh magnetoresistor R7, and a second magnetic field generator 121 is used to apply an eighth magnetic field to an eighth magnetoresistor R8. The eighth magnetic field includes a magnetic field component that is opposite in direction to the seventh magnetic field. In one specific embodiment, the eighth magnetic field has the same strength as the seventh magnetic field but is opposite in direction.

[0410] In one specific embodiment, such as Figure 15 The first magnetoresistive R1 has a negative magnetoresistive effect of -ΔR, the second magnetoresistive R2 has a negative magnetoresistive effect of -ΔR, the third magnetoresistive R3 has a positive magnetoresistive effect of +ΔR, the fourth magnetoresistive R4 has a positive magnetoresistive effect of +ΔR, the fifth magnetoresistive R5 has a positive magnetoresistive effect of +ΔR, the sixth magnetoresistive R6 has a positive magnetoresistive effect of +ΔR, the seventh magnetoresistive R7 has a negative magnetoresistive effect of -ΔR, and the eighth magnetoresistive R8 has a negative magnetoresistive effect of -ΔR.

[0411] Eight magnetoresistors are coupled to form a dual full-bridge structure. In one embodiment, the second terminal of the first magnetoresistor R1 is coupled to the second terminal of the sixth magnetoresistor R6; the second terminal of the fifth magnetoresistor R5 is coupled to the second terminal of the second magnetoresistor R2, for generating a calibration signal.

[0412] The voltage V2 at the coupling point between the second end of the first magnetoresistor R1 and the second end of the sixth magnetoresistor R6, and the voltage V1 at the coupling point between the second end of the second magnetoresistor R2 and the second end of the fifth magnetoresistor R5 can be used as the output.

[0413] After the first magnetic field generator 111 and the second magnetic field generator 121 apply magnetic fields, the full-bridge structure can use the difference between the voltage values ​​V1 and V2 as the output to generate the calibration signal.

[0414] For example, the first magnetic field generator 111 applies a first magnetic field Br to the first magnetoresistive R1, the third magnetoresistive R3, the fifth magnetoresistive R5, and the seventh magnetoresistive R7, while the second magnetic field generator 121 applies a second magnetic field -Br to the second magnetoresistive R2, the fourth magnetoresistive R4, the sixth magnetoresistive R6, and the eighth magnetoresistive R8. Since the calibration module 100 responds to the uniform ambient magnetic field with its output in the same direction, the coupled dual full-bridge structure can generate a calibration signal independent of the uniform ambient magnetic field; this calibration signal has voltage values ​​(V1-V2).

[0415] Figure 16 The structure of the calibration module 100 in the sixth embodiment of the present invention is shown.

[0416] The calibration module 100 includes a first magnetoresistive resistor R1 and a seventh magnetoresistive resistor R7.

[0417] The first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd.

[0418] The second end of the seventh magnetor R7 is coupled to the ground terminal GND.

[0419] The calibration module 100 includes a fourth magnetoresistive resistor R4 and a sixth magnetoresistive resistor R6.

[0420] The first end of the fourth magnetoresistor R4 is coupled to the second end of the first magnetoresistor R1, and the second end of the fourth magnetoresistor R4 is coupled to the ground terminal GND.

[0421] The first end of the sixth magnetor R6 is coupled to the power supply terminal Vd.

[0422] The first end of the seventh magnetor R7 is coupled to the second end of the sixth magnetor R6.

[0423] Thus, the first magnetoresistive resistor R1, the fourth magnetoresistive resistor R4, the sixth magnetoresistive resistor R6, and the seventh magnetoresistive resistor R7 are coupled to form a full-bridge structure. This full-bridge structure does not produce an output in the face of a uniform ambient magnetic field.

[0424] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the first magnetoresistive R1.

[0425] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the fourth magnetoresistive R4.

[0426] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the sixth magnetoresistor R5.

[0427] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the seventh magnetoresistor R7.

[0428] In one embodiment, an output node is included between the second end of the first magnetoresistor R1 and the first end of the fourth magnetoresistor R4, the output node being used to generate the calibration signal.

[0429] In one embodiment, an output node is included between the second end of the sixth magnetoresistor R6 and the first end of the seventh magnetoresistor R7, the output node being used to generate the calibration signal.

[0430] There is a preset magnetoresistive effect relationship between the first magnetoresistive resistor R1, the fourth magnetoresistive resistor R4, the sixth magnetoresistive resistor R6, and the seventh magnetoresistive resistor R7.

[0431] In one embodiment, the first magnetoresistive R1 has a positive magnetoresistance effect +ΔR, the fourth magnetoresistive R4 has a positive magnetoresistance effect +ΔR, the sixth magnetoresistive R6 has a positive magnetoresistance effect +ΔR, and the seventh magnetoresistive R7 has a positive magnetoresistance effect +ΔR.

[0432] In one embodiment, the first magnetoresistive R1 has a negative magnetoresistance effect -ΔR, the fourth magnetoresistive R4 has a negative magnetoresistance effect -ΔR, the sixth magnetoresistive R6 has a negative magnetoresistance effect -ΔR, and the seventh magnetoresistive R7 has a negative magnetoresistance effect -ΔR.

[0433] In one embodiment, the second magnetic field generator 121 is used to apply a fourth magnetic field to the fourth magnetoresistive resistor R4. The fourth magnetic field includes a magnetic field component that is opposite in direction to the first magnetic field. In a specific embodiment, the fourth magnetic field has the same strength but opposite direction to the first magnetic field.

[0434] In one embodiment, the second magnetic field generator 121 is used to apply a sixth magnetic field to the sixth magnetoresistive resistor R6. The sixth magnetic field includes a magnetic field component with the same direction as the fourth magnetic field. In a specific embodiment, the sixth magnetic field is the same as the fourth magnetic field.

[0435] In one embodiment, a first magnetic field generator 111 is used to apply a seventh magnetic field to a seventh magnetoresistive resistor R7. The seventh magnetic field includes a magnetic field component with the same direction as the first magnetic field. In a specific embodiment, the seventh magnetic field is the same as the first magnetic field.

[0436] In one embodiment, another set of magnetoresistors can also be configured in a similar full-bridge structure. This full-bridge structure does not produce an output in the face of a uniform ambient magnetic field. In particular, the configurations of the two full-bridge structures can be identical.

[0437] like Figure 16 The calibration module 100 includes a third magnetoresistive resistor R3 and a fifth magnetoresistive resistor R5.

[0438] The second end of the third magnetoresistor R3 is coupled to the ground terminal GND.

[0439] The first end of the fifth magnetor R5 is coupled to the power supply terminal Vd.

[0440] The calibration module 100 includes a second magnetoresistive resistor R2 and an eighth magnetoresistive resistor R8.

[0441] The first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd, and the second end of the second magnetoresistor R2 is coupled to the first end of the third magnetoresistor R3.

[0442] The first end of the eighth magnetor R8 is coupled to the second end of the sixth magnetor R6, and the second end of the eighth magnetor R8 is coupled to the ground terminal GND.

[0443] Thus, the second magnetoresistive resistor R2, the third magnetoresistive resistor R3, the fifth magnetoresistive resistor R5, and the eighth magnetoresistive resistor R8 are coupled to form a full-bridge structure. This full-bridge structure does not produce an output in the face of a uniform ambient magnetic field.

[0444] In one embodiment, the calibration signal is related to the voltage value V1 at the second terminal of the second magnetoresistive R2.

[0445] In one embodiment, the calibration signal is related to the voltage value V1 at the first terminal of the third magnetoresistor R3.

[0446] In one embodiment, the calibration signal is related to the voltage value V2 at the second terminal of the fifth magnetoresistive R5.

[0447] In one embodiment, the calibration signal is related to the voltage value V2 at the first terminal of the eighth magnetor R8.

[0448] In one embodiment, an output node is included between the second end of the second magnetoresistor R2 and the first end of the third magnetoresistor R3, the output node being used to generate the calibration signal.

[0449] In one embodiment, an output node is included between the second end of the fifth magnetor R5 and the first end of the eighth magnetor R8, the output node being used to generate the calibration signal.

[0450] The second magnetoresistive resistor R2, the third magnetoresistive resistor R3, the fifth magnetoresistive resistor R5, and the eighth magnetoresistive resistor R8 have a preset magnetoresistive effect relationship.

[0451] In one embodiment, the second magnetoresistive R2 has a positive magnetoresistance effect +ΔR, the third magnetoresistive R3 has a positive magnetoresistance effect +ΔR, the fifth magnetoresistive R5 has a positive magnetoresistance effect +ΔR, and the eighth magnetoresistive R8 has a positive magnetoresistance effect +ΔR.

[0452] In one embodiment, the second magnetoresistive R2 has a negative magnetoresistance effect -ΔR, the third magnetoresistive R3 has a negative magnetoresistance effect -ΔR, the fifth magnetoresistive R5 has a negative magnetoresistance effect -ΔR, and the eighth magnetoresistive R8 has a negative magnetoresistance effect -ΔR.

[0453] In one embodiment, a first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistive resistor R3. The third magnetic field includes a magnetic field component that is opposite in direction to the second magnetic field. In a specific embodiment, the third magnetic field has the same strength but opposite direction to the second magnetic field.

[0454] The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the fourth magnetic field is opposite in direction to the third magnetic field but has the same intensity.

[0455] The third magnetic field includes the same magnetic field components as the first magnetic field. In one specific embodiment, the third magnetic field is the same as the first magnetic field.

[0456] In one embodiment, a first magnetic field generator 111 is used to apply a fifth magnetic field to a fifth magnetoresistive resistor R5. The fifth magnetic field includes a magnetic field component with the same direction as the third magnetic field. In a specific embodiment, the fifth magnetic field is the same as the third magnetic field.

[0457] The sixth magnetic field includes a magnetic field component that is opposite in direction to the fifth magnetic field. In one specific embodiment, the sixth magnetic field is opposite in direction to the fifth magnetic field but has the same intensity.

[0458] In one embodiment, the second magnetic field generator 121 is used to apply an eighth magnetic field to the eighth magnetoresistive resistor R8. The eighth magnetic field includes a magnetic field component with the same direction as the second magnetic field. In a specific embodiment, the eighth magnetic field is the same as the second magnetic field.

[0459] The eighth magnetic field includes a magnetic field component that is opposite to that of the seventh magnetic field. In one specific embodiment, the eighth magnetic field is opposite in direction and equal in intensity to the seventh magnetic field.

[0460] The seventh magnetic field includes the same magnetic field components as the fifth magnetic field. In one specific embodiment, the seventh magnetic field is the same as the fifth magnetic field.

[0461] In this sixth embodiment, the preset positional relationship is as follows: the first end of the first magnetoresistor R1 is coupled to the power supply terminal Vd, and the first end of the second magnetoresistor R2 is coupled to the power supply terminal Vd.

[0462] A first magnetic field generator 111 is used to apply a third magnetic field to a third magnetoresistor R3, and a second magnetic field generator 121 is used to apply a fourth magnetic field to a fourth magnetoresistor R4. The fourth magnetic field includes a magnetic field component that is opposite in direction to the third magnetic field. In one specific embodiment, the third magnetic field and the fourth magnetic field have equal strength but opposite directions.

[0463] The third magnetic field includes the same magnetic field components as the first magnetic field. In one specific embodiment, the third magnetic field is the same as the first magnetic field.

[0464] A first magnetic field generator 111 is used to apply a fifth magnetic field to a fifth magnetoresistor R5, and a second magnetic field generator 121 is used to apply a sixth magnetic field to a sixth magnetoresistor R6. The sixth magnetic field includes a magnetic field component that is opposite in direction to the fifth magnetic field. In one specific embodiment, the sixth magnetic field has the same strength but opposite direction to the fifth magnetic field.

[0465] A first magnetic field generator 111 is used to apply a seventh magnetic field to a seventh magnetoresistor R7, and a second magnetic field generator 121 is used to apply an eighth magnetic field to an eighth magnetoresistor R8. The eighth magnetic field includes a magnetic field component that is opposite in direction to the seventh magnetic field. In one specific embodiment, the eighth magnetic field has the same strength as the seventh magnetic field but is opposite in direction.

[0466] The seventh magnetic field includes a magnetic field component with the same direction as the fifth magnetic field. In one specific embodiment, the seventh magnetic field is the same as the fifth magnetic field.

[0467] In one specific embodiment, such as Figure 10 The first magnetoresistor R1 has a positive magnetoresistive effect of +ΔR, the second magnetoresistor R2 has a positive magnetoresistive effect of +ΔR, the third magnetoresistor R3 has a positive magnetoresistive effect of +ΔR, the fourth magnetoresistor R4 has a positive magnetoresistive effect of +ΔR, the fifth magnetoresistor R5 has a positive magnetoresistive effect of +ΔR, the sixth magnetoresistor R6 has a positive magnetoresistive effect of +ΔR, the seventh magnetoresistor R7 has a positive magnetoresistive effect of +ΔR, and the eighth magnetoresistor R8 has a positive magnetoresistive effect of +ΔR.

[0468] Eight magnetoresistors are coupled to form a dual full-bridge structure. In one embodiment, the second end of the first magnetoresistor R1 is coupled to the second end of the fifth magnetoresistor R5, and the second end of the second magnetoresistor R2 is coupled to the second end of the sixth magnetoresistor R6, for generating a calibration signal.

[0469] The voltage V2 at the coupling point between the second end of the first magnetoresistor R1 and the second end of the fifth magnetoresistor R5, and the voltage V1 at the coupling point between the second end of the second magnetoresistor R2 and the second end of the sixth magnetoresistor R6 can be used as the output.

[0470] After the first magnetic field generator 111 and the second magnetic field generator 121 apply magnetic fields, the full-bridge structure can use the difference between the voltage values ​​V1 and V2 as the output to generate the calibration signal.

[0471] For example, the first magnetic field generator 111 applies a first magnetic field Br to the first magnetoresistor R1, the second magnetic field generator 121 applies a second magnetic field -Br to the second magnetoresistor R2, the first magnetic field generator 111 applies a first magnetic field Br to the third magnetoresistor R3, the second magnetic field generator 121 applies a second magnetic field -Br to the fourth magnetoresistor R4, the first magnetic field generator 111 applies a first magnetic field Br to the fifth magnetoresistor R5, the second magnetic field generator 121 applies a second magnetic field -Br to the sixth magnetoresistor R6, the first magnetic field generator 111 applies a first magnetic field Br to the seventh magnetoresistor R7, and the second magnetic field generator 121 applies a second magnetic field -Br to the eighth magnetoresistor R8. Since the calibration module 100 does not generate an output for uniform ambient magnetic fields, the coupled dual full-bridge structure can generate a calibration signal independent of uniform ambient magnetic fields; this calibration signal has voltage values ​​(V1-V2).

[0472] Figure 17 , Figure 18 The structure of the calibration module 100 in the seventh embodiment of the present invention is shown.

[0473] The calibration module 100 includes a first Hall unit H1.

[0474] The detection direction of the first Hall unit H1 is perpendicular to the plane in which the Hall unit (e.g., the first Hall unit H1) is positioned. In one embodiment, the detection direction of the first Hall unit H1 is a third direction Z. The detection direction of the first Hall unit H1 can indicate that the first Hall unit H1 is sensitive to changes in the magnetic field in that direction.

[0475] The first terminal e11 of the first Hall unit H1 is coupled to the power supply terminal Vd; the second terminal e12 of the first Hall unit H1 is coupled to the ground terminal GND.

[0476] The first Hall unit H1 also includes a third terminal e13 and a fourth terminal e14. When the first Hall unit H1 is energized and a magnetic field along the Z direction is applied, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e13 and the fourth terminal e14.

[0477] The calibration module 100 includes a second Hall element H2.

[0478] The detection direction of the second Hall unit H2 is perpendicular to the plane in which the Hall unit (e.g., the second Hall unit H2) is positioned. In one embodiment, the detection direction of the second Hall unit H2 is the third direction Z. The detection direction of the second Hall unit H2 indicates that the second Hall unit H2 is sensitive to changes in the magnetic field in that direction.

[0479] The first terminal e21 of the second Hall unit H2 is coupled to the power supply terminal Vd; the second terminal e22 of the second Hall unit H2 is coupled to the ground terminal GND.

[0480] The second Hall unit H2 also includes a third terminal e23 and a fourth terminal e24. When the second Hall unit H2 is energized and a magnetic field along the Z direction is applied, the charge is deflected based on the Lorentz force, generating a potential difference between the third terminal e23 and the fourth terminal e24.

[0481] The third terminal e23 of the second Hall unit H2 is coupled to the fourth terminal e14 of the first Hall unit H1, and the fourth terminal e24 of the second Hall unit H2 is coupled to the third terminal e13 of the first Hall unit H1. In this way, a dual Hall structure that does not generate output to the ambient magnetic field is formed.

[0482] The voltage value V1 at the coupling point between the fourth terminal e14 of the first Hall unit H1 and the third terminal e23 of the second Hall unit H2, and the voltage value V2 at the coupling point between the third terminal e13 of the first Hall unit H1 and the fourth terminal e24 of the second Hall unit H2 can be used as the output.

[0483] After the first magnetic field generator 111 and the second magnetic field generator 121 apply magnetic fields, the dual Hall structure can use the difference between the voltage values ​​V1 and V2 as the output to generate the calibration signal.

[0484] For example, the first magnetic field generator 111 applies a first magnetic field Br to the first Hall unit H1, and the second magnetic field generator 121 applies a second magnetic field -Br to the second Hall unit H2. Since the calibration module 100 responds to the output direction of the uniform ambient magnetic field, the coupled dual Hall structure can generate a calibration signal independent of the uniform ambient magnetic field; this calibration signal has a voltage value (V1-V2).

[0485] In summary, the magnetic field detection device provided by this invention, by setting up independent detection and calibration modules, can avoid the bandwidth of the magnetic field detection device being affected by the alternation of detection and calibration steps; by adjusting the magnitude of the magnetic field detection signal at the detection module based on the value of the reference signal, the magnetic field detection signal can be calibrated at the numerical level, eliminating linearity errors; by configuring the reference signal to be independent of the uniform ambient magnetic field, the overall performance of the magnetic field detection device can be avoided by the influence of the ambient magnetic field on the reference signal or the calibration module used to generate it, especially avoiding the problem of detection range shrinkage caused by power consumption.

[0486] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0487] The detailed descriptions listed above are merely specific descriptions of feasible embodiments of the present invention, and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.

Claims

1. A magnetic field detection device, characterized in that, include: The detection module is used to generate magnetic field detection signals; The calibration module is used to generate a reference signal; The reference signal is used to calibrate the magnetic field detection signal, and the reference signal is independent of the uniform ambient magnetic field. When the value of the reference signal has a first relationship with the first preset value, the magnetic field detection signal is amplified; or, When the value of the reference signal has a second relationship with the second preset value, the magnetic field detection signal weakens.

2. The magnetic field detection device according to claim 1, characterized in that, The first relationship includes the reference signal value being less than a first preset value; the magnetic field detection signal amplification includes at least one of the following: The drive current of the detection module increases. The driving voltage of the detection module is increased. The amplification factor of the generated magnetic field detection signal is increased; The operational gain of the detected signal is increased.

3. The magnetic field detection device according to claim 1, characterized in that, The second relationship includes the reference signal value being greater than a second preset value; the weakening of the magnetic field detection signal includes at least one of the following: The drive current input to the detection module decreases; The driving voltage input to the detection module decreases; The amplification factor of the generated magnetic field detection signal is reduced; The computational gain for generating the magnetic field detection signal is reduced.

4. The magnetic field detection device according to claim 1, characterized in that, include: The first processing module has its output terminal coupled to the input terminal of the detection module, and is used to output a first calibration value when the value of the reference signal has a first relationship with a first preset value, and to output a second calibration value when the value of the reference signal has a second relationship with a second preset value; The first calibration value is used to increase the drive current or drive voltage; The second calibration value is used to reduce the drive current or drive voltage.

5. The magnetic field detection device according to claim 1, characterized in that, include: A first amplifier, the input of which is coupled to the output of the detection module; The first processing module, whose output terminal is coupled to the control terminal of the first amplifier, is used to output a third calibration value when the value of the reference signal has a first relationship with a first preset value, and to output a fourth calibration value when the value of the reference signal has a second relationship with a second preset value. The third calibration value is used to increase the magnification. The fourth calibration value is used to reduce the magnification.

6. The magnetic field detection device according to claim 1, characterized in that, include: The second processing module has its input terminal coupled to the output terminal of the detection module, and its output terminal outputs the processed magnetic field detection signal. The first processing module, whose output terminal is coupled to the control terminal of the second processing module, is used to output a fifth calibration value when the value of the reference signal has a first relationship with the first preset value, and to output a sixth calibration value when the value of the reference signal has a second relationship with the second preset value. The fifth calibration value is used to increase the operational gain; The sixth calibration value is used to reduce the operational gain.

7. The magnetic field detection device according to claim 1, characterized in that, The calibration module includes: Detection unit; A magnetic field generator is used to apply a calibration magnetic field to the detection unit; the direction of the calibration magnetic field is parallel to the detection direction of the detection unit. The strength of the calibration magnetic field is characterized by the value of the reference signal.

8. The magnetic field detection device according to claim 1, characterized in that, The calibration module includes: The first magnetoresistor has its first end coupled to the power supply terminal; A first magnetic field generator is used to apply a first magnetic field to a first magnetoresistive field; The second magnetoresistive resistor has a first end coupled to the second end of the first magnetoresistive resistor, and the second end coupled to the ground terminal. A second magnetic field generator is used to apply a second magnetic field to a second magnetoresistive field, the second magnetic field including a magnetic field component that is opposite in direction to the first magnetic field; The reference signal is related to the voltage value at the second terminal of the first magnetoresistive, or the reference signal is related to the voltage value at the first terminal of the second magnetoresistive. The first magnetoresistance has a positive magnetoresistance effect and the second magnetoresistance has a positive magnetoresistance effect, or The first magnetoresistance has a negative magnetoresistance effect and the second magnetoresistance has a negative magnetoresistance effect.

9. The magnetic field detection device according to claim 1, characterized in that, The calibration module includes: First magnetoresistance; A first magnetic field generator is used to apply a first magnetic field to a first magnetoresistive field; The second magnetoresistive resistor has a preset positional relationship with the first magnetoresistive resistor and a preset magnetoresistive effect relationship with the first magnetoresistive resistor; A second magnetic field generator is used to apply a second magnetic field to a second magnetoresistive field, the second magnetic field including a magnetic field component that is opposite in direction to the first magnetic field; The preset positional relationship satisfies one of the following: The first end of the first magnetoresistor is coupled to the power supply terminal, and the first end of the second magnetoresistor is coupled to the power supply terminal. The second end of the first magnetoresistor is coupled to the ground terminal, and the second end of the second magnetoresistor is coupled to the ground terminal. The preset magnetoresistive effect relationship satisfies one of the following: The first magnetoresistive effect is positive magnetoresistance and the second magnetoresistive effect is positive magnetoresistance. The first magnetoresistance has a negative magnetoresistance effect and the second magnetoresistance has a negative magnetoresistance effect.

10. The magnetic field detection device according to claim 9, characterized in that, The calibration module also includes: The third magnetoresistive resistor has its first end coupled to the second end of the first magnetoresistive resistor, and its second end coupled to the ground terminal. The fourth magnetoresistor has its first end coupled to the second end of the second magnetoresistor, and its second end coupled to the ground terminal. It has a preset magnetoresistive effect relationship with the first magnetoresistor, the second magnetoresistor, and the third magnetoresistor. The first end of the first magnetoresistor is coupled to the power supply terminal, and the first end of the second magnetoresistor is coupled to the power supply terminal. The first magnetic field generator is also used to apply a third magnetic field to the third magnetoresistor, and the second magnetic field generator is also used to apply a fourth magnetic field to the fourth magnetoresistor. The fourth magnetic field includes a magnetic field component opposite to that of the third magnetic field, and the third magnetic field includes a magnetic field component the same as that of the first magnetic field. The reference signal satisfies at least one of the following: It is related to the voltage value at the second terminal of the first magnetoresistive resistor; It is related to the voltage value at the second terminal of the second magnetoresistive resistor; It is related to the voltage value at the first terminal of the third magnetoresistive resistor; It is related to the voltage value at the first terminal of the fourth magnetoresistive resistor; The preset magnetoresistive effect relationship satisfies one of the following: The first magnetoresistance has a negative magnetoresistance effect, the second magnetoresistance has a negative magnetoresistance effect, the third magnetoresistance has a positive magnetoresistance effect, and the fourth magnetoresistance has a positive magnetoresistance effect; The first magnetoresistance has a positive magnetoresistance effect, the second magnetoresistance has a positive magnetoresistance effect, the third magnetoresistance has a negative magnetoresistance effect, and the fourth magnetoresistance has a negative magnetoresistance effect.

11. The magnetic field detection device according to claim 9, characterized in that, The calibration module also includes: The third magnetoresistive resistor has its first end coupled to the second end of the first magnetoresistive resistor, and its second end coupled to the ground terminal. The fourth magnetoresistor has its first end coupled to the second end of the second magnetoresistor, and its second end coupled to the ground terminal. It has a preset magnetoresistive effect relationship with the first magnetoresistor, the second magnetoresistor, and the third magnetoresistor. The first end of the first magnetoresistor is coupled to the power supply terminal, and the first end of the second magnetoresistor is coupled to the power supply terminal. The first magnetic field generator is also used to apply a fourth magnetic field to the fourth magnetoresistor, and the second magnetic field generator is also used to apply a third magnetic field to the third magnetoresistor. The third magnetic field includes a magnetic field component opposite to the fourth magnetic field and a magnetic field component opposite to the first magnetic field. The reference signal satisfies at least one of the following: It is related to the voltage value at the second terminal of the first magnetoresistive resistor; It is related to the voltage value at the second terminal of the second magnetoresistive resistor; It is related to the voltage value at the first terminal of the third magnetoresistive resistor; It is related to the voltage value at the first terminal of the fourth magnetoresistive resistor; The preset magnetoresistive effect relationship satisfies one of the following: The first magnetoresistive effect has a positive magnetoresistance effect, the second magnetoresistive effect has a positive magnetoresistance effect, the third magnetoresistive effect has a positive magnetoresistance effect, and the fourth magnetoresistive effect has a positive magnetoresistance effect; The first magnetoresistance has a negative magnetoresistance effect, the second magnetoresistance has a negative magnetoresistance effect, the third magnetoresistance has a negative magnetoresistance effect, and the fourth magnetoresistance has a negative magnetoresistance effect.

12. The magnetic field detection device according to claim 9, characterized in that, The calibration module also includes: The third magnetoresistive resistor has its first end coupled to the second end of the first magnetoresistive resistor, and its second end coupled to the ground terminal. The fourth magnetoresistor has its first end coupled to the second end of the second magnetoresistor, and its second end coupled to the ground terminal. The fifth magnetoresistor has its first end coupled to the power supply terminal; The sixth magnetoresistor has its first end coupled to the power supply terminal; The seventh magnetoresistor has its first end coupled to the second end of the fifth magnetoresistor, and its second end coupled to the ground terminal. The eighth magnetoresistor has its first end coupled to the second end of the sixth magnetoresistor, and its second end coupled to the ground terminal; it has a preset magnetoresistive effect relationship with the first, second, third, fourth, fifth, sixth, and seventh magnetoresistors. The first end of the first magnetoresistor is coupled to the power supply terminal, and the first end of the second magnetoresistor is coupled to the power supply terminal. The first magnetic field generator is also used to apply a third magnetic field to the third magnetoresistor, and the second magnetic field generator is also used to apply a fourth magnetic field to the fourth magnetoresistor. The fourth magnetic field includes a magnetic field component opposite to that of the third magnetic field, and the third magnetic field includes a magnetic field component the same as that of the first magnetic field. The first magnetic field generator is also used to apply a fifth magnetic field to the fifth magnetoresistor, and the second magnetic field generator is also used to apply a sixth magnetic field to the sixth magnetoresistor, the sixth magnetic field including a magnetic field component opposite to the fifth magnetic field. The first magnetic field generator is also used to apply a seventh magnetic field to the seventh magnetoresistor, and the second magnetic field generator is also used to apply an eighth magnetic field to the eighth magnetoresistor. The eighth magnetic field includes a magnetic field component opposite to that of the seventh magnetic field, and the seventh magnetic field includes a magnetic field component identical to that of the fifth magnetic field. The reference signal satisfies at least one of the following: It is related to the voltage value at the second terminal of the first magnetoresistive resistor; It is related to the voltage value at the second terminal of the second magnetoresistive resistor; It is related to the voltage value at the first terminal of the third magnetoresistive resistor; It is related to the voltage value at the first terminal of the fourth magnetoresistive resistor; It is related to the voltage value at the second terminal of the fifth magnetoresistive resistor; It is related to the voltage value at the second terminal of the sixth magnetoresistive resistor; It is related to the voltage value at the first terminal of the seventh magnetor. It is related to the voltage value at the first terminal of the eighth magnetor. The preset magnetoresistive effect relationship satisfies one of the following: The first magnetoresistive effect has a negative magnetoresistive effect, the second magnetoresistive effect has a negative magnetoresistive effect, the third magnetoresistive effect has a positive magnetoresistive effect, the fourth magnetoresistive effect has a positive magnetoresistive effect, the fifth magnetoresistive effect has a negative magnetoresistive effect, the sixth magnetoresistive effect has a negative magnetoresistive effect, the seventh magnetoresistive effect has a positive magnetoresistive effect, and the eighth magnetoresistive effect has a positive magnetoresistive effect. The first magnetoresistive resistor has a positive magnetoresistive effect, the second magnetoresistive resistor has a positive magnetoresistive effect, the third magnetoresistive resistor has a negative magnetoresistive effect, the fourth magnetoresistive resistor has a negative magnetoresistive effect, the fifth magnetoresistive resistor has a positive magnetoresistive effect, the sixth magnetoresistive resistor has a positive magnetoresistive effect, the seventh magnetoresistive resistor has a negative magnetoresistive effect, and the eighth magnetoresistive resistor has a negative magnetoresistive effect.

13. The magnetic field detection device according to claim 9, characterized in that, The calibration module also includes: The third magnetoresistive resistor has its first end coupled to the second end of the first magnetoresistive resistor, and its second end coupled to the ground terminal. The fourth magnetoresistor has its first end coupled to the second end of the second magnetoresistor, and its second end coupled to the ground terminal. The fifth magnetoresistor has its first end coupled to the power supply terminal; The sixth magnetoresistor has its first end coupled to the power supply terminal; The seventh magnetoresistor has its first end coupled to the second end of the fifth magnetoresistor, and its second end coupled to the ground terminal. The eighth magnetoresistor has its first end coupled to the second end of the sixth magnetoresistor, and its second end coupled to the ground terminal; it has a preset magnetoresistive effect relationship with the first, second, third, fourth, fifth, sixth, and seventh magnetoresistors. The first end of the first magnetoresistor is coupled to the power supply terminal, and the first end of the second magnetoresistor is coupled to the power supply terminal. The first magnetic field generator is also used to apply a third magnetic field to the third magnetoresistor, and the second magnetic field generator is also used to apply a fourth magnetic field to the fourth magnetoresistor. The fourth magnetic field includes a magnetic field component opposite to that of the third magnetic field, and the third magnetic field includes a magnetic field component the same as that of the first magnetic field. The first magnetic field generator is also used to apply a fifth magnetic field to the fifth magnetoresistor, and the second magnetic field generator is also used to apply a sixth magnetic field to the sixth magnetoresistor, the sixth magnetic field including a magnetic field component opposite to the fifth magnetic field. The first magnetic field generator is also used to apply a seventh magnetic field to the seventh magnetoresistor, and the second magnetic field generator is also used to apply an eighth magnetic field to the eighth magnetoresistor. The eighth magnetic field includes a magnetic field component opposite to that of the seventh magnetic field, and the seventh magnetic field includes a magnetic field component identical to that of the fifth magnetic field. The reference signal satisfies at least one of the following: It is related to the voltage value at the second terminal of the first magnetoresistive resistor; It is related to the voltage value at the second terminal of the second magnetoresistive resistor; It is related to the voltage value at the first terminal of the third magnetoresistive resistor; It is related to the voltage value at the first terminal of the fourth magnetoresistive resistor; It is related to the voltage value at the second terminal of the fifth magnetoresistive resistor; It is related to the voltage value at the second terminal of the sixth magnetoresistive resistor; It is related to the voltage value at the first terminal of the seventh magnetor. It is related to the voltage value at the first terminal of the eighth magnetor. The preset magnetoresistive effect relationship satisfies one of the following: The first magnetoresistive effect has a negative magnetoresistive effect, the second magnetoresistive effect has a negative magnetoresistive effect, the third magnetoresistive effect has a positive magnetoresistive effect, the fourth magnetoresistive effect has a positive magnetoresistive effect, the fifth magnetoresistive effect has a positive magnetoresistive effect, the sixth magnetoresistive effect has a positive magnetoresistive effect, the seventh magnetoresistive effect has a negative magnetoresistive effect, and the eighth magnetoresistive effect has a negative magnetoresistive effect. The first magnetoresistive resistor has a positive magnetoresistive effect, the second magnetoresistive resistor has a positive magnetoresistive effect, the third magnetoresistive resistor has a negative magnetoresistive effect, the fourth magnetoresistive resistor has a negative magnetoresistive effect, the fifth magnetoresistive resistor has a negative magnetoresistive effect, the sixth magnetoresistive resistor has a negative magnetoresistive effect, the seventh magnetoresistive resistor has a positive magnetoresistive effect, and the eighth magnetoresistive resistor has a positive magnetoresistive effect.

14. The magnetic field detection device according to claim 9, characterized in that, The calibration module also includes: The third magnetoresistive device has its first end coupled to the second end of the second magnetoresistive device, and its second end coupled to the ground terminal. The fourth magnetoresistor has its first end coupled to the second end of the first magnetoresistor, and its second end coupled to the ground terminal. The fifth magnetoresistor has its first end coupled to the power supply terminal; The sixth magnetoresistor has its first end coupled to the power supply terminal; The seventh magnetoresistor has its first end coupled to the second end of the sixth magnetoresistor, and its second end coupled to the ground terminal. The eighth magnetoresistor has its first end coupled to the second end of the fifth magnetoresistor, and its second end coupled to the ground terminal; it has a preset magnetoresistive effect relationship with the first, second, third, fourth, fifth, sixth, and seventh magnetoresistors. The first end of the first magnetoresistor is coupled to the power supply terminal, and the first end of the second magnetoresistor is coupled to the power supply terminal. The first magnetic field generator is also used to apply a third magnetic field to the third magnetoresistor, and the second magnetic field generator is also used to apply a fourth magnetic field to the fourth magnetoresistor. The fourth magnetic field includes a magnetic field component opposite to that of the third magnetic field, and the third magnetic field includes a magnetic field component the same as that of the first magnetic field. The first magnetic field generator is also used to apply a fifth magnetic field to the fifth magnetoresistor, and the second magnetic field generator is also used to apply a sixth magnetic field to the sixth magnetoresistor, the sixth magnetic field including a magnetic field component opposite to the fifth magnetic field. The first magnetic field generator is also used to apply a seventh magnetic field to the seventh magnetoresistor, and the second magnetic field generator is also used to apply an eighth magnetic field to the eighth magnetoresistor. The eighth magnetic field includes a magnetic field component opposite to that of the seventh magnetic field, and the seventh magnetic field includes a magnetic field component identical to that of the fifth magnetic field. The reference signal satisfies at least one of the following: It is related to the voltage value at the second terminal of the first magnetoresistive resistor; It is related to the voltage value at the second terminal of the second magnetoresistive resistor; It is related to the voltage value at the first terminal of the third magnetoresistive resistor; It is related to the voltage value at the first terminal of the fourth magnetoresistive resistor; It is related to the voltage value at the second terminal of the fifth magnetoresistive resistor; It is related to the voltage value at the second terminal of the sixth magnetoresistive resistor; It is related to the voltage value at the first terminal of the seventh magnetor. It is related to the voltage value at the first terminal of the eighth magnetor. The preset magnetoresistive effect relationship satisfies one of the following: The first magnetoresistance has a positive magnetoresistance effect, the second magnetoresistance has a positive magnetoresistance effect, the third magnetoresistance has a positive magnetoresistance effect, the fourth magnetoresistance has a positive magnetoresistance effect, the fifth magnetoresistance has a positive magnetoresistance effect, the sixth magnetoresistance has a positive magnetoresistance effect, the seventh magnetoresistance has a positive magnetoresistance effect and the eighth magnetoresistance has a positive magnetoresistance effect, or The first magnetoresistance has a negative magnetoresistance effect, the second magnetoresistance has a negative magnetoresistance effect, the third magnetoresistance has a negative magnetoresistance effect, the fourth magnetoresistance has a negative magnetoresistance effect, the fifth magnetoresistance has a negative magnetoresistance effect, the sixth magnetoresistance has a negative magnetoresistance effect, the seventh magnetoresistance has a negative magnetoresistance effect, and the eighth magnetoresistance has a negative magnetoresistance effect.

15. The magnetic field detection device according to claim 1, characterized in that, The calibration module includes: The first Hall unit has a detection direction perpendicular to the plane on which it is set, and its first end is coupled to the power supply terminal and its second end is coupled to the ground terminal. The second Hall element has a detection direction perpendicular to the plane on which it is set. Its first end is coupled to the power supply end, its second end is coupled to the ground end, its third end is coupled to the fourth end of the first Hall element, and its fourth end is coupled to the third end of the first Hall element.

16. The magnetic field detection device according to claim 1, characterized in that, The detection module includes: The first detection module is located in the first area; The second detection module is located in a second region different from the first region. The output terminal of the second detection module is coupled to the output terminal of the first detection module and is used to generate a magnetic field detection signal.

17. The magnetic field detection device according to claim 1, characterized in that, The detection module includes: The first detection module is located in the first area; The second detection module is located in a second region different from the first region; The magnetic field detection device further includes a first amplifier, whose first input terminal is coupled to the output terminal of the first detection module, and whose second input terminal is coupled to the output terminal of the second detection module. The first amplifier is used to generate a magnetic field detection signal.

18. The magnetic field detection device according to claim 1, characterized in that, The detection module includes: The first detection module is located in the first area and is used to generate the first detection signal; The second detection module is located in a second region different from the first region and is used to generate a second detection signal; The magnetic field detection device further includes a subtractor for generating a magnetic field detection signal based on the first detection signal and the second detection signal.

Images