High-frequency quartz resonator and design method thereof
By designing an AT-cut quartz crystal wafer and a knife-shaped metal electrode structure, the problems of parasitic mode interference and temperature drift in miniature quartz resonators were solved, and the stability and reliability of high-frequency performance were improved, making it suitable for high-speed circuits.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING INST OF RADIO METROLOGY & MEASUREMENT
- Filing Date
- 2026-01-20
- Publication Date
- 2026-05-15
AI Technical Summary
In the process of miniaturizing the size of quartz resonators, the reduction in electrode size leads to increased interference from coupled vibrations, making it difficult to achieve high-frequency performance indicators. In particular, parasitic mode suppression has become a core challenge in the design.
A high-frequency quartz resonator is designed, which adopts an AT-cut quartz wafer and a knife-shaped metal electrode structure. Combined with an optimized dispensing process for conductive adhesive, parasitic vibrations are suppressed and the uniformity of electric field distribution and mechanical stress balance are improved by precisely setting the wafer cutting angle and electrode size.
It significantly improves performance stability and reliability in high-frequency scenarios, with frequency jump points controlled within ±2ppm, meeting the frequency source requirements of high-speed circuits, reducing manufacturing costs and taking into account production efficiency.
Smart Images
Figure CN122052730A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of resonator technology. More specifically, it relates to a high-frequency quartz resonator and its design method. Background Technology
[0002] Quartz resonators possess a unique piezoelectric effect, which is why they are often used as the core frequency source in electronic devices and are widely used in various electronic circuits. With the continuous development of applications such as high-speed circuits, more stringent requirements have been placed on the high-frequency performance design of quartz resonators. However, with the continuous miniaturization of quartz resonators, the electrode size has also decreased, significantly exacerbating the interference from various coupled vibrations and thus greatly increasing the difficulty of achieving key performance indicators for high-frequency resonators. Therefore, parasitic mode suppression has become a core focus in the design process of high-frequency resonators. Summary of the Invention In view of the above problems, one object of the present invention is to provide a high-frequency quartz resonator.
[0003] Another objective of this invention is to provide a design method for a high-frequency quartz resonator.
[0004] To achieve the above objectives, the present invention adopts the following technical solution: According to one aspect of the present invention, a high-frequency quartz resonator is provided, comprising: Ceramic base, metal cover, quartz wafer and metal electrodes; The ceramic base includes a receiving cavity and a base gold-plated platform disposed within the receiving cavity; The quartz wafer is located inside the receiving cavity and is fixed to the gold-plated platform of the base by conductive adhesive, forming an electrical connection; The metal electrode includes a first electrode layer and a second electrode layer, which are symmetrically disposed on the upper and lower surfaces of the quartz wafer. The first electrode layer and the second electrode layer have the same structure, both arranged in the shape of a kitchen knife, including a main body and a handle, and the main body and the quartz wafer are concentrically arranged. The metal cover is encapsulated on the upper surface of the ceramic base, making the receiving cavity a sealed chamber.
[0005] Alternatively, the main body can be rectangular, the handle can be rectangular, and the length and width of the handle are both smaller than the length and width of the main body. The handle portion is located on one side of the main body in the width direction, with its upper edge flush with the main body and extending along the length direction of the main body to the wide edge of the quartz wafer.
[0006] Alternatively, the high-frequency quartz resonator can operate at a frequency of 50-200MHz and employ a third overtone vibration mode.
[0007] Alternatively, when the operating frequency of the high-frequency quartz resonator is 50-120MHz, the thickness of the quartz wafer is 4.6-11.1μm, and the dimensions of the main body are (1.0±0.1)mm×(0.8±0.1)mm.
[0008] Alternatively, when the operating frequency of the high-frequency quartz resonator is 120-200MHz, the thickness of the quartz wafer is 2.8-4.6μm, and the dimensions of the main body are (0.8±0.1)mm×(0.65±0.1)mm.
[0009] Alternatively, the quartz wafer can be AT-cut with a cut angle of 35°24'±5'. The dimensions of the quartz wafer are (2±0.1) mm × (1.35±0.1) mm.
[0010] According to one aspect of the present invention, a design method for a high-frequency quartz resonator is provided, comprising the following steps: Quartz wafer selection and parameter design: Based on the high-frequency operating requirements and temperature stability requirements of the resonator, AT-cut quartz wafers are selected. The cutting angle, length × width dimensions and thickness parameters of the quartz wafer are set in combination with frequency characteristics and package compatibility. The thickness of the quartz wafer is inversely proportional to the target resonant frequency. Metal electrode structure and size design: Based on the requirements of resistance control, parasitic response suppression and frequency jump point optimization of the resonator, a first electrode layer and a second electrode layer with a knife-shaped arrangement are prepared on the upper and lower surfaces of the quartz wafer, respectively. The first electrode layer and the second electrode layer have the same structure, including a main body and a handle. The size of the main body is matched according to the target operating frequency of the resonator. Conductive adhesive selection and dispensing process: Based on the long-term reliability and electrical connection stability requirements of the resonator, a conductive adhesive that meets the requirements of low volatility, low stress, high bonding strength and excellent conductivity is selected. After the conductive adhesive is fully degassed and stirred, the quartz wafer with metal electrodes is mounted on the shelf and the adhesive is dispensed and fixed.
[0011] Alternatively, the quartz wafer may be cut at an angle of 35°24'±5'. The dimensions of the quartz wafer are (2±0.1) mm × (1.35±0.1) mm; The thickness of the quartz wafer is calculated using the following formula: in, t For the thickness of the quartz wafer,K This is the frequency constant of the quartz crystal, with a value ranging from 1600 to 1700 kHz·mm. n For the number of overtones, f The target resonant frequency.
[0012] Alternatively, when the target operating frequency of the high-frequency quartz resonator is 50-120MHz, the thickness of the quartz wafer is 4.6-11.1μm, and the dimensions of the main body are (1.0±0.1)mm×(0.8±0.1)mm.
[0013] Alternatively, when the target operating frequency of the high-frequency quartz resonator is 120-200MHz, the thickness of the quartz wafer is 2.8-4.6μm, and the dimensions of the main body are (0.8±0.1)mm×(0.65±0.1)mm.
[0014] The beneficial effects of this invention are as follows: To address the technical problems existing in the prior art, this invention provides a high-frequency quartz resonator and its design method. The invention systematically optimizes the metal electrodes, quartz wafer, and dispensing process of the quartz resonator, significantly improving performance stability and reliability in high-frequency applications. The core beneficial effects are as follows: The AT-cut wafer angle is precisely set to 35°24'±5', matching a working frequency of 50-200MHz. It adopts a three-overtone vibration mode and, combined with an optimized quartz crystal size design, controls the frequency jump point of the resonator within ±2ppm in the operating temperature range of -40℃ to 85℃, meeting the stringent requirements of high-speed circuits for frequency sources.
[0015] By optimizing the size of the metal electrode through frequency band division, the size of the main body is (1±0.1) mm × (0.8±0.1) mm at the operating frequency of 50~120MHz, and (0.8±0.1) mm × (0.65±0.1) mm at the operating frequency of 120~200MHz. A knife-shaped electrode structure is adopted and the main body is centered. At the same time, a reasonable ratio of metal electrode area to quartz crystal area is matched to effectively separate the main vibration mode and parasitic frequency, suppress coupled vibration interference, and improve the purity of vibration mode.
[0016] Low-volatility, low-stress silicone conductive adhesive is selected, and an edge dispensing process is adopted. Combined with an integrated electrode structure design, this reduces the impact of dispensing on vibration characteristics while ensuring bonding strength and electrical connection stability. The tolerances of various parameters are adapted to mass production processes, balancing performance and production efficiency, and reducing manufacturing costs.
[0017] This invention effectively solves the technical pain points of parasitic mode interference, temperature drift and insufficient structural reliability in high-frequency miniaturized resonators, and is suitable for the high-frequency application needs of various electronic circuits. Attached Figure Description
[0018] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.
[0019] Fig. 1 A half-sectional view of a high-frequency quartz resonator provided in an embodiment of the present invention is shown.
[0020] Fig. 2 A partial cross-sectional top view of the high-frequency quartz resonator provided in an embodiment of the present invention is shown. Detailed Implementation
[0021] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.
[0022] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a direct connection or a connection through an intermediate medium or gap; they can refer to the internal communication of two elements or the interaction between two elements. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0023] In this invention, unless otherwise expressly specified and limited, the first feature "above" or "below" the second feature may include direct contact between the first and second features, or contact between the first and second features not in direct contact but through another feature between them.
[0024] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.
[0025] To address the technical problems existing in the prior art, embodiments of the present invention provide a high-frequency quartz resonator, combined with... Figs. 1-2 As shown, the high-frequency quartz resonator includes a ceramic base 1, a metal cover plate 2, a quartz wafer 3, and a metal electrode 4.
[0026] The ceramic base 1 includes a receiving cavity 11 and a base gold-plated platform 12 disposed within the receiving cavity 11.
[0027] The quartz wafer 3 is located inside the receiving cavity 11 and is fixed to the gold-plated base platform 12 by conductive adhesive 5, forming an electrical connection.
[0028] The metal electrode 4 includes a first electrode layer and a second electrode layer, which are symmetrically disposed on the upper and lower surfaces of the quartz wafer 3.
[0029] The first electrode layer and the second electrode layer have the same structure, both arranged in the shape of a kitchen knife, including a main body 41 and a handle 42, wherein the main body 41 and the quartz wafer 3 are concentrically arranged.
[0030] The metal cover plate 2 is encapsulated on the upper surface of the ceramic base 1, so that the receiving cavity forms a sealed chamber.
[0031] In one specific embodiment, the main body 41 is a rectangular structure, and the handle 42 is also a rectangular structure, forming an integrated structure. The length and width of the handle 42 are both smaller than those of the main body 41. The handle 42 is located on one side of the main body 41 in the width direction, with its upper edge flush with the upper edge of the main body 41, and extends along the length direction of the main body 41 to the wide edge of the quartz wafer 3. The metal electrode 4, arranged in a knife shape, can precisely match the main vibration mode of the AT-cut quartz wafer 3, optimize the electric field / current distribution, and balance mechanical stress.
[0032] The core function of AT-cut quartz wafers relies on the thickness shear master vibration, while the excitation of parasitic vibrations (such as bending vibration, surface shear vibration, edge vibration and other clutter modes) is essentially the coupling of the shape or position of the metal electrode 4 with the electric field of the non-master vibration region of the quartz wafer 3, or the leakage of vibration energy into the clutter mode.
[0033] In this embodiment, the main body 41 has a rectangular structure and is concentrically arranged with the quartz wafer 3, which can ensure that the electric field is uniformly distributed in the main vibration core area and prevent the electric field from spreading to the edge of the quartz wafer 3 (parasitic vibration sensitive area). The handle part 42 extends along the main vibration direction of the quartz wafer 3 and is located outside the main vibration node, that is, the parasitic vibration antinode region. This arrangement can increase the excitation threshold of parasitic vibration, make the parasitic vibration frequency deviate from the main vibration frequency, and avoid coupling with the main vibration.
[0034] The extension direction of the handle portion 42 is perpendicular to the vibration direction of the parasitic vibration, forming a damping barrier. When the quartz crystal 3 attempts to generate clutter vibration, the inertial force of the handle portion 42 hinders the transmission of vibration energy, causing the parasitic vibration to decay rapidly.
[0035] In one specific embodiment, the high-frequency quartz resonator is an SMD3225 high-frequency quartz resonator. Here, SMD3225 refers to the resonator's package size of 3.2mm (length) × 2.5mm (width) (industry standard notation: the first two digits represent the length, and the last two digits represent the width, in mm), and the external dimensions of the ceramic base 1 and the metal cover plate 2 are fixed.
[0036] The high-frequency quartz resonator operates at a frequency of 50-200MHz, which falls within the mid-to-high frequency range. f With the thickness of quartz wafer 3 t They are inversely proportional, as shown in the following formula: in, t For the thickness of the quartz wafer, K This is the frequency constant of the quartz crystal, with a value ranging from 1600-1700 kHz·mm. The commonly used frequency constant in the industry is 1670 kHz·mm. n For the number of overtones, f The target resonant frequency is the operating frequency of the high-frequency quartz resonator.
[0037] If baseband mode is used, i.e. n If the value is 1, then the thickness of the quartz crystal 3 corresponding to a working frequency of 200MHz is approximately 8μm, resulting in extremely poor mechanical strength and a high risk of breakage. Therefore, in this embodiment, a third overtone vibration mode is adopted, which can balance high frequency and mechanical reliability.
[0038] Since the area of the metal electrode 4 directly affects the vibration characteristics (including main vibration excitation, parasitic vibration suppression, etc.) and electrical properties (equivalent resistance, Q value, etc.) of the quartz crystal 3, but the size of the same metal electrode 4 cannot meet the requirements of the entire frequency band, it is necessary to design a graded matching between the operating frequency and the metal electrode 4.
[0039] In a specific embodiment, when the operating frequency of the high-frequency quartz resonator is 50-120MHz, it is calculated that the thickness of the quartz wafer is approximately 11.1μm at 50MHz and approximately 4.6μm at 120MHz. Therefore, when the operating frequency of the high-frequency quartz resonator is 50-120MHz, the thickness of the quartz wafer 3 ranges from 4.6 to 11.1μm. At this time, the size of the main body 41 is (1.0±0.1)mm×(0.8±0.1)mm, which can cover approximately 60-70% of the center area of the quartz wafer 3, ensuring uniform excitation of the main vibration by the electric field and reducing the equivalent resistance.
[0040] In another specific embodiment, when the operating frequency of the high-frequency quartz resonator is 120-200MHz, it is calculated that the thickness of the quartz wafer is approximately 4.6μm at 120MHz and approximately 2.8μm at 200MHz. Therefore, when the operating frequency of the high-frequency quartz resonator is 120-200MHz, the thickness of the quartz wafer 3 is in the range of 2.8-4.6μm. At this time, the size of the main body 41 is (0.8±0.1)mm×(0.65±0.1)mm. The reduction in the area of the metal electrode 4 can reduce vibration damping, improve the Q value, and effectively suppress parasitic vibration.
[0041] It should be noted that the dimensional tolerance of ±0.1mm is based on the precision achievable by existing photolithography and vapor deposition processes. Within this error range, the frequency drift can be guaranteed to be ≤±3ppm, which meets the performance requirements of high-frequency resonators.
[0042] It should be noted that the thickness range of the quartz wafer 3 is derived based on the frequency constant K=1670kHz·mm. If quartz materials with different frequency constants are used, the thickness range can be adjusted accordingly.
[0043] The core constraint of the SMD3225 high-frequency quartz resonator package is that the quartz wafer 3 must be completely housed within the housing cavity 11, with sufficient allowance for the packaging process. Since the SMD3225 package dimensions are 3.2mm x 2.5mm (length x width), based on industry practice, the area for placing the quartz wafer 3 is (3.2-0.2)mm x (2.5-0.2)mm (length x width). The requirement for the packaging process allowance is that the quartz wafer 3 should have a 0.2-0.5mm margin between itself and the inner wall of the housing cavity. Therefore, the length of the quartz wafer 3 is [1.8mm, 2.8mm], and the width is [1.2mm, 2.1mm]. It should be noted that the lower limits for length and width are the minimum mechanical strength critical values for the quartz wafer 3 to prevent wafer breakage.
[0044] In this embodiment, the quartz crystal 3 is AT-cut, and the high-frequency quartz resonator adopts the third overtone mode. Its core lies in the thickness shear principal vibration. The aspect ratio of the quartz crystal 3 directly affects the vibration stability and the parasitic vibration suppression effect.
[0045] The main vibration energy of the third overtone vibration mode is more concentrated in the center of the quartz crystal than the fundamental frequency. The aspect ratio of the quartz crystal needs to be in the range of 1.2-1.5:1. This range can ensure the symmetry of the main vibration mode, avoid parasitic vibration of surface shear, and improve the mechanical stiffness of the quartz crystal.
[0046] Meanwhile, when the ratio of the width to the thickness of the quartz crystal is greater than or equal to 100, the thickness of the quartz crystal is originally less than its width. The energy of the thickness shear vibration will be confined inside the quartz crystal, and the frequency of the parasitic vibration will be far away from the main vibration frequency, thus achieving mode isolation.
[0047] Finally, taking into account the dimensions of the main body 41 of the metal electrode 4, in a specific example, the dimensions of the quartz wafer 3 are defined as (2±0.1) mm × (1.35±0.1) mm.
[0048] In this embodiment, the quartz wafer 3 is AT-cut, and the zero-temperature coefficient reference chamfer angle for AT-cutting is 35°15'-35°30'. Within this range, the frequency drift over a wide temperature range is minimized. In the third overtone vibration mode, due to the difference in vibration energy distribution from the fundamental frequency, the reference chamfer angle needs fine-tuning: the optimal reference chamfer angle for the mid-to-high frequency band (50~200MHz) is 35°24'. Finally, the tolerance range needs to be determined in conjunction with process feasibility constraints. In a specific embodiment, the chamfer angle of the quartz wafer 3 is 35°24'±5'. When the resonator's operating frequency is 50-120MHz, the 35°24'±5' chamfer angle ensures symmetrical frequency drift in both high and low temperature bands; when the resonator's operating frequency is 120-200MHz, the thin wafer is more temperature sensitive, and this chamfer angle can offset the temperature coefficient shift caused by the reduction in thickness, ensuring consistent performance across the entire frequency band.
[0049] Another embodiment of the present invention provides a design method for a high-frequency quartz resonator, comprising the following steps: 1) Quartz wafer selection and parameter design: Based on the high-frequency operating requirements and temperature stability requirements of the resonator, AT-cut quartz wafers are selected. The cutting angle, length × width dimensions and thickness parameters of the quartz wafer are set in combination with frequency characteristics and package compatibility. The thickness of the quartz wafer is inversely proportional to the target resonant frequency. 2) Metal electrode structure and size design: Based on the requirements of resistance control, parasitic response suppression and frequency jump point optimization of the resonator, a first electrode layer and a second electrode layer with a knife-like arrangement are prepared on the upper and lower surfaces of the quartz wafer, respectively. The first electrode layer and the second electrode layer have the same structure, including a main body and a handle. The size of the main body is matched according to the target operating frequency of the resonator. 3) Selection and dispensing process of conductive adhesive: Based on the long-term reliability and electrical connection stability requirements of the resonator, a conductive adhesive that meets the requirements of low volatility, low stress, high bonding strength and excellent conductivity is selected. After the conductive adhesive is fully degassed and stirred, the quartz wafer with metal electrodes is mounted on the shelf and the adhesive is dispensed and fixed.
[0050] In one specific embodiment, in step 1), the quartz wafer has a cut angle of 35°24'±5'; The dimensions of the quartz wafer are (2±0.1) mm × (1.35±0.1) mm; The thickness of the quartz wafer is calculated using the following formula: in,t For the thickness of the quartz wafer, K This is the frequency constant of the quartz crystal, with a value ranging from 1600 to 1700 kHz·mm. n For the number of overtones, f The target resonant frequency.
[0051] In a specific embodiment, in step 2), when the target operating frequency of the high-frequency quartz resonator is 50-120MHz, it is calculated that at 50MHz, the thickness of the quartz wafer is approximately 11.1μm; at 120MHz, the thickness of the quartz wafer is approximately 4.6μm. Therefore, when the operating frequency of the high-frequency quartz resonator is 50-120MHz, the thickness range of the quartz wafer 3 is 4.6-11.1μm. At this time, the size of the main body 41 is (1.0±0.1)mm×(0.8±0.1)mm, which can cover approximately 60-70% of the center area of the quartz wafer 3, ensuring that the electric field uniformly excites the main vibration and reduces the equivalent resistance.
[0052] In another specific embodiment, in step 2), when the target operating frequency of the high-frequency quartz resonator is 120-200MHz, it is calculated that the thickness of the quartz wafer is approximately 4.6μm at 120MHz and approximately 2.8μm at 200MHz. Therefore, when the operating frequency of the high-frequency quartz resonator is 120-200MHz, the thickness of the quartz wafer 3 is in the range of 2.8-4.6μm. At this time, the size of the main body 41 is (0.8±0.1)mm×(0.65±0.1)mm. The reduction in the area of the metal electrode 4 can reduce vibration damping, improve the Q value, and effectively suppress parasitic vibration.
[0053] It should be noted that the dimensional tolerance of ±0.1mm is based on the precision achievable by existing photolithography and vapor deposition processes. Within this error range, the frequency drift can be guaranteed to be ≤±3ppm, which meets the performance requirements of high-frequency resonators.
[0054] It should be noted that the thickness range of the quartz wafer 3 is derived based on the frequency constant K=1670kHz·mm. If quartz materials with different frequency constants are used, the thickness range can be adjusted accordingly.
[0055] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. For those skilled in the art, other variations or modifications can be made based on the above description. It is impossible to exhaustively list all the implementation methods here. All obvious variations or modifications derived from the technical solutions of the present invention are still within the protection scope of the present invention.
Claims
1. A high-frequency quartz resonator, characterized in that, include: Ceramic base, metal cover, quartz wafer and metal electrodes; The ceramic base includes a receiving cavity and a base gold-plated platform disposed within the receiving cavity; The quartz wafer is located inside the receiving cavity and is fixed to the gold-plated platform of the base by conductive adhesive, forming an electrical connection; The metal electrode includes a first electrode layer and a second electrode layer, which are symmetrically disposed on the upper and lower surfaces of the quartz wafer. The first electrode layer and the second electrode layer have the same structure, both arranged in the shape of a kitchen knife, including a main body and a handle, and the main body and the quartz wafer are concentrically arranged. The metal cover is encapsulated on the upper surface of the ceramic base, making the receiving cavity a sealed chamber.
2. The high-frequency quartz resonator according to claim 1, characterized in that, The main body is a rectangular structure, the handle is a rectangular structure, and the length and width of the handle are both smaller than the length and width of the main body. The handle portion is located on one side of the main body in the width direction, with its upper edge flush with the main body and extending along the length direction of the main body to the wide edge of the quartz wafer.
3. The high-frequency quartz resonator according to claim 1, characterized in that, The high-frequency quartz resonator operates at a frequency of 50-200MHz and employs a third overtone vibration mode.
4. The high-frequency quartz resonator according to claim 3, characterized in that, When the operating frequency of the high-frequency quartz resonator is 50-120MHz, the thickness of the quartz wafer is 4.6-11.1μm, and the dimensions of the main body are (1.0±0.1)mm×(0.8±0.1)mm.
5. The high-frequency quartz resonator according to claim 3, characterized in that, When the operating frequency of the high-frequency quartz resonator is 120-200MHz, the thickness of the quartz wafer is 2.8-4.6μm, and the dimensions of the main body are (0.8±0.1)mm×(0.65±0.1)mm.
6. The high-frequency quartz resonator according to claim 1, characterized in that, The quartz wafer is AT-cut with a cut angle of 35°24'±5'; The dimensions of the quartz wafer are (2±0.1) mm × (1.35±0.1) mm.
7. A design method for a high-frequency quartz resonator as described in claim 1, characterized in that, Includes the following steps: Quartz wafer selection and parameter design: Based on the high-frequency operating requirements and temperature stability requirements of the resonator, AT-cut quartz wafers are selected. The cutting angle, length × width dimensions and thickness parameters of the quartz wafer are set in combination with frequency characteristics and package compatibility. The thickness of the quartz wafer is inversely proportional to the target resonant frequency. Metal electrode structure and size design: Based on the requirements of resistance control, parasitic response suppression and frequency jump point optimization of the resonator, a first electrode layer and a second electrode layer with a knife-shaped arrangement are prepared on the upper and lower surfaces of the quartz wafer, respectively. The first electrode layer and the second electrode layer have the same structure, including a main body and a handle. The size of the main body is matched according to the target operating frequency of the resonator. Conductive adhesive selection and dispensing process: Based on the long-term reliability and electrical connection stability requirements of the resonator, a conductive adhesive that meets the requirements of low volatility, low stress, high bonding strength and excellent conductivity is selected. After the conductive adhesive is fully degassed and stirred, the quartz wafer with metal electrodes is mounted on the shelf and the adhesive is dispensed and fixed.
8. The design method according to claim 7, characterized in that, The quartz wafer has a cut angle of 35°24'±5'; The dimensions of the quartz wafer are (2±0.1) mm × (1.35±0.1) mm; The thickness of the quartz wafer is calculated using the following formula: in, t For the thickness of the quartz wafer, K This is the frequency constant of the quartz crystal, with a value ranging from 1600 to 1700 kHz·mm. n For the number of overtones, f The target resonant frequency.
9. The design method according to claim 7, characterized in that, When the target operating frequency of the high-frequency quartz resonator is 50-120MHz, the thickness of the quartz wafer is 4.6-11.1μm, and the dimensions of the main body are (1.0±0.1)mm×(0.8±0.1)mm.
10. The design method according to claim 7, characterized in that, When the target operating frequency of the high-frequency quartz resonator is 120-200MHz, the thickness of the quartz wafer is 2.8-4.6μm, and the dimensions of the main body are (0.8±0.1)mm×(0.65±0.1)mm.