A MEMS far-infrared narrowband light source

Abstract

This invention discloses a mid-to-far-infrared narrowband light source for MEMS, comprising a substrate, a suspension support layer, a heating resistor layer, and a radiation functional layer. The substrate is a silicon substrate. The suspension support layer is fixed to the substrate by anchor points. The heating resistor layer is disposed on the suspension support layer, and the radiation functional layer is disposed above the heating resistor layer. The suspension support layer and the heating resistor layer have Y-shaped grooves forming a Y-beam suspension structure. The Y-beam suspension structure is connected to the substrate by anchor points to form thermal isolation. The surface of the radiation functional layer has a periodically arranged array of micro / nano structures. The period and size of the micro / nano structure array are on the same order of magnitude as the target infrared wavelength, forming an artificial interface with specific equivalent refractive index and resonance characteristics to achieve narrowband spectral output. This invention can reduce heat conduction from the radiation region to the substrate, reduce heat conduction loss, reduce heat leakage, improve thermal isolation performance, and reduce heat capacity, thereby enabling the beam to heat up and cool down rapidly.

Description

Technical Field

[0001] This invention belongs to the field of infrared light sources, specifically relating to a far-infrared narrowband light source for MEMS. Background Technology

[0002] MEMS infrared light sources are core devices manufactured using Micro-Electro-Mechanical Systems (MEMS) technology. They actively emit infrared light by heating tiny structures with electric current. Their key advantages lie in miniaturization, low power consumption, rapid modulation, and easy integration with other circuits, making them ideal for the needs of modern portable and intelligent devices. As a core component of next-generation gas sensors, spectrometers, and thermal imaging systems, the working principle of MEMS infrared light sources is typically based on the process of "electrical energy → Joule heating → blackbody radiation → infrared output." With the increasing demand for miniaturized, low-power infrared sensors in fields such as the Internet of Things (IoT) and environmental monitoring, traditional broadband light sources face problems such as high energy consumption, slow response speed, high heat conduction loss, and poor temperature uniformity. Therefore, to avoid the shortcomings of existing technologies, it is necessary to improve them. Summary of the Invention

[0003] The purpose of this invention is to provide a far-infrared narrowband light source for MEMS, which can reduce the conduction of heat from the radiation area to the substrate, reduce heat conduction loss, reduce heat leakage, improve thermal isolation performance, reduce heat capacity, thereby enabling the beam to heat up and cool down quickly, and also improve structural stability.

[0004] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: A MEMS far-infrared narrowband light source includes a substrate, a suspension support layer, a heating resistor layer, and a radiation functional layer. The substrate is a silicon substrate. The suspension support layer is fixed to the substrate by anchor points. The heating resistor layer is disposed on the suspension support layer. The radiation functional layer is disposed above the heating resistor layer. The suspension support layer and the heating resistor layer have Y-shaped grooves to form a Y-beam suspension structure. The Y-beam suspension structure is connected to the substrate by the anchor points to form thermal isolation. The surface of the radiation functional layer has a periodically arranged array of micro-nano structures. The micro-nano structure array constitutes a metasurface structure. The period and size of the micro-nano structure array are on the same order of magnitude as the target infrared wavelength, forming an artificial interface with specific equivalent refractive index and resonance characteristics to achieve narrowband spectral output.

[0005] As a preferred embodiment of the far-infrared narrowband light source in the aforementioned MEMS, the suspended support layer adopts a composite dielectric film structure, which includes, from bottom to top, a first silicon oxide layer, a silicon nitride and boron-doped single-crystal silicon layer, and a second silicon oxide layer.

[0006] As a preferred embodiment of the far-infrared narrowband light source in the aforementioned MEMS, the heating resistance layer adopts a three-segment fan-shaped resistor series structure, with the three fan-shaped resistors distributed along the circumferential direction, and their geometry matching the radiation area of ​​the radiation functional layer.

[0007] As a preferred solution for the far-infrared narrowband light source in the aforementioned MEMS, the Y-beam suspension structure integrates three electrical interfaces: a driving end, a sensing end, and a common end. The driving end is used to input energy, the sensing end is used to monitor or regulate temperature, and the common end optimizes thermal response through mechanical and electrical design. All three work together on the same chip.

[0008] As a preferred embodiment of the far-infrared narrowband light source in the aforementioned MEMS, the micro-nano structure array is a periodic micro-nano frustum array, and the frustum array controls the optical modes of the radiation functional layer through geometric parameters to achieve narrowband radiation.

[0009] As a preferred option for the far-infrared narrowband light source in the aforementioned MEMS, each frustum unit in the periodic micro-nano frustum array has a tapered sidewall structure, which causes the effective refractive index of the medium to gradually change along the thickness direction.

[0010] As a preferred embodiment of the far-infrared narrowband light source in the aforementioned MEMS, the substrate is an SOI wafer, and a back cavity is provided on the back side of the substrate. The back cavity is a trapezoidal cavity formed by anisotropic wet etching. The trapezoidal cavity constitutes a pier-type support structure to reduce the contact area between the anchor point and the substrate.

[0011] As a preferred embodiment of the far-infrared narrowband light source in the aforementioned MEMS, the top of the SOI wafer is a heavily doped single-crystal silicon layer, which can absorb back infrared radiation and store heat to generate a self-heating effect.

[0012] As a preferred embodiment of the far-infrared narrowband light source in the aforementioned MEMS, the material of the heating resistance layer is selected from platinum and boron-doped polycrystalline silicon, and the light source also includes an electrode layer, the material of which is aluminum.

[0013] As a preferred embodiment of the far-infrared narrowband light source in the aforementioned MEMS, the Y-shaped groove is vertically distributed along the suspension support layer and the heating resistance layer. The Y-shaped groove divides the Y-beam suspension structure into three cantilever beams that are centrally symmetrically distributed. One end of each cantilever beam is connected to the anchor point, and the other end together supports the radiation functional layer located at the center.

[0014] The far-infrared narrowband light source for MEMS provided by this invention has the following advantages compared with the prior art: The heating resistance layer of this invention generates heat when energized, converting electrical energy into thermal energy. According to the blackbody radiation law, any object with a temperature above absolute zero will radiate electromagnetic waves. The heating resistance layer emits broadband infrared light. The micro-nano structure array on the surface of the radiation functional layer acts as an optical sieve, filtering and enhancing infrared light of specific wavelengths, achieving narrowband, high-efficiency, and wavelength-tunable emission. Y-shaped grooves are formed in the suspension support layer and the heating resistance layer to create a Y-beam suspension structure, reducing the contact area with the substrate and lengthening the heat conduction path. The Y-beam suspension structure is connected to the substrate through only a few anchor points. Compared to a monolithic film or straight beam structure, the fixed support area is significantly reduced. Heat flow must be conducted to the substrate along the slender beam, thus significantly reducing heat leakage and improving thermal isolation performance. Higher operating temperatures can be achieved at the same driving power. The Y-beam suspension structure confines the heated area to the suspension support layer and heating resistor layer. The volume of materials involved in heating is smaller, the equivalent heat capacity is reduced, and the thermal response time is shortened. Therefore, steady state or recovery can be achieved in milliseconds during heating and cooling, meeting the requirements of high-frequency modulation. The three-dimensionally distributed Y-beam symmetrically supports the suspension film, which can evenly distribute thermal and mechanical stress, avoiding warping, cracking, and other failures in single-arm or double-arm structures under high-temperature cycling, improving device reliability and lifespan, and enhancing mechanical stability and stress resistance. By controlling the heat conduction path and stress distribution, the Y-beam suspension structure achieves comprehensive performance optimization of low power consumption, high temperature, and fast response. The period and size of the micro / nano structure array are on the same order of magnitude as the target infrared wavelength, forming an artificial interface with specific equivalent refractive index and resonance characteristics. The micro / nano structure array achieves narrowband spectral output through the design of its period and size. The micro / nano structure array generates a photonic crystal / Mie resonance effect on the incident / emitted electromagnetic waves, enhancing the local electromagnetic field and radiation coupling near a specific wavelength, thereby achieving high emissivity at that wavelength, while maintaining low emissivity at wavelengths far from the resonance, resulting in a narrowband radiation spectrum. The micro / nano structure array is used to control the spectral and angular distribution of infrared radiation. In this technical solution, the Y-beam suspension structure and the micro / nano structure array improve the performance of the far-infrared narrowband light source in MEMS from the thermal and optical dimensions, respectively. By improving the geometry, the heat conduction path, heat capacity distribution, and surface radiation characteristics are directly changed, thereby bringing about a substantial improvement in performance indicators such as power consumption, temperature uniformity, and spectral narrowband. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings of the embodiments will be briefly described below.

[0016] Figure 1 This is a schematic diagram of the structural distribution of the far-infrared narrowband light source in the MEMS of this invention; Figure 2 This is a schematic diagram of the heating resistance layer of the present invention; Figure 3 This is a schematic diagram of the radiation functional layer of the present invention; Figure 4 This is a schematic diagram of light incident on the micro / nano structure array at different angles according to the present invention; Figure 5 This is a schematic diagram of the overall scheme of the present invention.

[0017] Marked in the image: 1. Substrate; 2. Suspension support layer; 21. First silicon oxide layer; 22. Silicon nitride and boron-doped single-crystal silicon layer; 23. Second silicon oxide layer; 3. Heating resistance layer; 31. Y-groove; 4. Radiation functional layer; 41. Micro-nano structure array. Detailed Implementation

[0018] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0019] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0020] In the description of this invention, "several" means one or more, "more than" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0021] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0022] Please refer to the following: Figures 1 to 5 The far-infrared narrowband light source in MEMS provided in the embodiments of the present invention will now be described.

[0023] like Figures 1 to 5As shown, the far-infrared narrowband light source in MEMS of the present invention includes a substrate 1, a suspension support layer 2, a heating resistance layer 3, and a radiation functional layer 4. The substrate 1 is a silicon substrate. The suspension support layer 2 is fixed to the substrate 1 by anchor points. The heating resistance layer 3 is disposed on the suspension support layer 2. The radiation functional layer 4 is disposed above the heating resistance layer 3. The suspension support layer 2 and the heating resistance layer 3 have Y-shaped grooves 31 to form a Y-beam suspension structure. The Y-beam suspension structure is connected to the substrate 1 by anchor points to form thermal isolation. The surface of the radiation functional layer 4 is provided with a periodically arranged micro-nano structure array 41. The micro-nano structure array 41 constitutes a metasurface structure. The period and size of the micro-nano structure array 41 are on the same order of magnitude as the target infrared wavelength, forming an artificial interface with specific equivalent refractive index and resonance characteristics to achieve narrowband spectral output.

[0024] A Y-shaped groove 31 is formed between the levitation support layer 2 and the heating resistance layer 3 to create a Y-beam suspension structure, reducing the contact area with the substrate 1 and lengthening the heat conduction path. The Y-beam suspension structure is connected to the substrate 1 only through a few anchor points. Compared to a whole film or straight beam structure, the fixed support area is significantly reduced, and heat flow must be conducted to the substrate 1 along the slender beam, improving thermal isolation performance and thus significantly reducing heat loss and increasing heating efficiency. The design of the Y-shaped groove 31 further optimizes thermal resistance while maintaining mechanical strength, ensuring enhanced stability of the device under high-temperature operating conditions. The heat generated by the heating resistance layer 3 after being energized is effectively confined to the suspension region, causing the radiative functional layer 4 to heat up rapidly and achieve efficient infrared radiation. Combined with the precise control capability of the metasurface structure over electromagnetic waves, this light source can achieve narrowband, highly selective spectral emission in the mid- and far-infrared bands, meeting the application requirements of gas sensing and spectral analysis.

[0025] In other embodiments, the Y-beam suspension structure can be replaced with an X-shaped groove or a *-shaped groove to form a suspension structure with enhanced thermal resistance in multiple directions, further optimizing the thermal isolation effect. The design of different groove structures can be flexibly adjusted according to the device size and thermal distribution requirements, maximizing thermal resistance while ensuring sufficient mechanical support. All of the above structures are implemented using silicon deep etching technology compatible with standard CMOS processes, ensuring mass production capability. The micro-nano cylindrical array of the metasurface structure is defined using deep ultraviolet lithography or electron beam lithography, combined with reactive ion etching, to achieve precise control of the period and size, thereby stably outputting narrowband infrared radiation in the target wavelength band.

[0026] like Figure 1 , 5As shown, the suspension support layer 2 adopts a composite dielectric film structure, which includes, from bottom to top, a first silicon dioxide layer 21, a silicon nitride and boron-doped single-crystal silicon layer 22, and a second silicon dioxide layer 23. The silicon dioxide film has compressive stress and good thermal insulation, while the silicon nitride and boron-doped single-crystal silicon layer 22 has tensile stress and high mechanical strength. The composite structure of the two can combine the advantages of each, balance the residual stress in the film, reduce deformation at high temperatures, and ensure long-term performance stability.

[0027] like Figure 2 , 5 As shown, the heating resistor layer 3 adopts a three-segment fan-shaped resistor series structure. The three fan-shaped resistors are distributed along the circumference, and their geometry matches the radiation area of ​​the radiation functional layer 4. Matching the circular radiation area achieves uniform heating. The fan-shaped resistors are distributed along the circumference, and their geometry matches the circular or annular radiation area of ​​the suspended film, which makes the current density more uniformly distributed in the radial direction, avoiding the "hot spots" and "cold spots" generated by traditional straight resistors, thereby improving the temperature uniformity of the radiation surface. By using series connection to increase the total resistance and reduce the driving current, the equivalent resistance increases after multiple resistors are connected in series. When the voltage required to reach the target operating temperature remains unchanged or changes little, the required driving current decreases, and the I²R loss decreases accordingly, thereby reducing the overall power consumption. The three-segment fan-shaped resistor series structure facilitates precise adjustment of power and operating temperature range. The length and linewidth of each sector resistor can be designed independently. The total resistance value and the heating ratio of each area can be precisely controlled through layout parameters, which not only ensures a reduced temperature difference between the center and the edge areas, but also optimizes the balance between power consumption and radiation flux under different application requirements. Therefore, the three-segment fan-shaped resistor series structure, through the synergy of geometric distribution and resistance value design, achieves improved temperature uniformity of the radiating surface while reducing power consumption.

[0028] For example, the Y-beam suspension structure integrates three electrical interfaces: a drive end, a sensing end, and a common end. The drive end is used for energy input, the sensing end is used for temperature monitoring or regulation, and the common end optimizes thermal response through mechanical and electrical design. All three work collaboratively on the same chip, forming a three-terminal functionally coupled system. The drive end applies voltage to excite the heating resistor, the sensing end provides real-time temperature feedback through an integrated temperature-sensitive element, and the common end plays a balancing role in mechanical support and electrical pathways, optimizing heat conduction paths and reducing heat loss. The coplanar layout of the three terminals not only saves chip area but also improves system stability through electrical isolation and thermal zoning design. This structure, combined with the synergistic optimization of the composite dielectric suspension film and the fan-shaped resistor, enables the infrared light source to perform excellently in high-frequency modulation, low-power operation, and long-term reliability, providing an efficient heat source solution for on-chip integrated gas sensing systems.

[0029] For example, the micro-nano structure array 41 is a periodic micro-nano frustum array, which controls the optical modes of the radiation functional layer 4 through geometric parameters to achieve narrowband radiation.

[0030] For example, each frustum unit in a periodic micro / nano frustum array has a tapered sidewall structure that causes the effective refractive index of the medium to gradually change along the thickness direction.

[0031] Specifically, a frustum-shaped metasurface micro / nanostructure is disposed on the surface of the radiating functional layer 4. Its period and size are on the same order of magnitude as the target infrared wavelength, forming an artificial interface with specific equivalent refractive index and resonance characteristics. The periodic frustum array generates a photonic crystal / Mie resonance effect on the incident / emitted electromagnetic waves. That is, microparticles with Mie resonance capability are arranged in a periodic manner according to the photonic crystal, thus forming a Mie resonance photonic crystal or a resonance-based photonic crystal. The periodic frustum array enhances the coupling between the local electromagnetic field and radiation near a specific wavelength, thereby achieving high emissivity at that wavelength, while maintaining a lower emissivity at wavelengths far from the resonance, resulting in a narrowband radiation spectrum. Secondly, the height and taper of the frustum cause the effective refractive index of the medium to gradually change along the thickness direction, which can reduce interface reflection, improve the mode matching efficiency between the radiating layer and the outside world, and further enhance the effective radiation power of the target band. The array arrangement has a certain tolerance to different incident / emitting angles, and can maintain a high effective emissivity even with tilted incident light, improving the adaptability of the device to installation errors and changes in field of view in practical applications. Therefore, frustum-shaped metasurface micro / nanostructures achieve precise control over the infrared radiation band and intensity by controlling the optical modes of the radiating layer through geometric parameters. For example, by adjusting parameters such as the period, diameter, height, and taper of the frustum, the resonant wavelength position and spectral linewidth can be precisely tuned to achieve customized narrowband radiation tailored to the absorption characteristics of specific gases.

[0032] For example, substrate 1 is an SOI wafer, and a back cavity is provided on the back side of substrate 1. The back cavity is a trapezoidal cavity formed by anisotropic wet etching. The trapezoidal cavity constitutes a pier-type support structure to reduce the contact area between the anchor points and substrate 1. This significantly reduces thermal conductivity and improves the thermal isolation performance of the infrared light source. The sidewalls of the trapezoidal cavity are naturally formed by crystal planes, and the angles are precisely controllable, further enhancing structural stability and process repeatability. In other embodiments, a rectangular cavity can also be etched using dry etching to fabricate more MEMS infrared light sources, thereby reducing costs.

[0033] For example, the top of the SOI wafer is a heavily doped monocrystalline silicon layer. This layer absorbs back-infrared radiation and stores heat to generate a self-heating effect, thus reducing the energy consumption of the light source. The self-heating effect of the heavily doped monocrystalline silicon layer after absorbing back-infrared radiation effectively improves thermal radiation efficiency. Combined with the narrowband radiation modulation capability of the top micro / nano frustum array, the device can achieve highly selective and efficient infrared emission in the target wavelength band. Simultaneously, the buried silicon dioxide layer serves as a stop layer for deep reactive ion etching (DRIE), controlling the film thickness.

[0034] For example, the heating resistance layer 3 is made of platinum and boron-doped polycrystalline silicon, and the light source also includes an electrode layer made of aluminum. Ohmic contact is achieved between the electrode and the heating resistance layer 3 through vias, ensuring uniform current distribution, improving heating efficiency, and reducing the risk of localized overheating. By optimizing the electrode layout, current congestion effects can be effectively reduced, further improving the thermal stability and response speed of the device.

[0035] For example, the Y-shaped grooves 31 are vertically distributed along the suspension support layer 2 and the heating resistance layer 3. The Y-shaped grooves 31 divide the Y-beam suspension structure into three centrally symmetrically distributed cantilever beams. One end of each cantilever beam is connected to an anchor point, and the other end together supports the centrally located radiation functional layer 4. Such a structure can evenly distribute thermal stress and suppress structural instability caused by thermal deformation.

[0036] The far-infrared narrowband light source for MEMS provided by this invention has the following advantages compared with the prior art: The heating resistance layer 3 of this invention generates heat when energized, thus converting electrical energy into heat energy. According to the blackbody radiation law, any object with a temperature above absolute zero will radiate electromagnetic waves. The heating resistance layer 3 emits broadband infrared light. The micro-nano structure array 41 on the surface of the radiation functional layer 4 acts as an optical sieve, filtering and enhancing infrared light of specific wavelengths to achieve narrowband, high-efficiency, and wavelength-tunable emission. The suspension support layer 2 and the heating resistance layer 3 form a Y-beam suspension structure by creating Y-shaped grooves 31, reducing the contact area with the substrate 1 and lengthening the heat conduction path. The Y-beam suspension structure is connected to the substrate 1 through only a few anchor points. Compared with a whole film or straight beam structure, the fixed support area is significantly reduced. Heat flow must be conducted to the substrate 1 along the slender beam, thereby significantly reducing heat leakage and improving thermal isolation performance. Higher operating temperatures can be achieved at the same driving power. The Y-beam suspension structure confines the heated area to the suspension support layer 2 and the heating resistance layer 3. The volume of materials involved in heating is smaller, the equivalent heat capacity is reduced, and the thermal response time is shortened. Therefore, steady state or recovery can be achieved in milliseconds during heating and cooling, meeting the requirements of high-frequency modulation. The three-dimensionally distributed Y-beam symmetrically supports the suspension film, which can evenly distribute thermal and mechanical stress, avoiding warping, cracking and other failures of single-arm or double-arm structures under high-temperature cycling, improving device reliability and lifespan, and enhancing mechanical stability and stress resistance. By controlling the heat conduction path and stress distribution, the Y-beam suspension structure achieves comprehensive performance optimization of low power consumption, high temperature and fast response. The period and size of the micro / nano structure array 41 are on the same order of magnitude as the target infrared wavelength, forming an artificial interface with specific equivalent refractive index and resonance characteristics. The micro / nano structure array 41 achieves narrowband spectral output through the design of its period and size. The micro / nano structure array 41 generates a photonic crystal / Mie resonance effect on the incident / emitted electromagnetic waves, enhancing the coupling between the local electromagnetic field and radiation near a specific wavelength, thereby achieving high emissivity at that wavelength, while maintaining low emissivity at wavelengths far from the resonance, resulting in a narrowband radiation spectrum. The micro / nano structure array 41 is used to control the spectral and angular distribution of infrared radiation. In this technical solution, the Y-beam suspension structure and the micro / nano structure array 41 improve the performance of the far-infrared narrowband light source in MEMS from the thermal and optical dimensions, respectively. By improving the geometry, the heat conduction path, heat capacity distribution, and surface radiation characteristics are directly changed, thereby bringing about a substantial improvement in performance indicators such as power consumption, temperature uniformity, and spectral narrowband.

[0037] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and substitutions can be made without departing from the technical principles of the present invention, and these improvements and substitutions should also be considered within the scope of protection of the present invention.

Claims

1. A far-infrared narrowband light source for MEMS, characterized in that, include: Substrate, wherein the substrate is a silicon substrate; A suspension support layer, which is fixed to the substrate by anchor points; A heating resistance layer is disposed on the suspension support layer; A radiation functional layer is disposed above the heating resistance layer; The suspension support layer and the heating resistance layer are provided with Y-shaped grooves to form a Y-beam suspension structure. The Y-beam suspension structure is connected to the substrate through the anchor point to form thermal insulation. The surface of the radiation functional layer is provided with a periodically arranged array of micro-nano structures, which constitute a metasurface structure. The period and size of the micro-nano structure array are on the same order of magnitude as the target infrared wavelength, forming an artificial interface with specific equivalent refractive index and resonance characteristics to achieve narrowband spectral output.

2. The far-infrared narrowband light source for MEMS according to claim 1, characterized in that, The suspension support layer adopts a composite dielectric film structure, which includes, from bottom to top, a first silicon oxide layer, a silicon nitride and boron-doped single crystal silicon layer, and a second silicon oxide layer.

3. The far-infrared narrowband light source for MEMS according to claim 1, characterized in that, The heating resistance layer adopts a three-segment fan-shaped resistor series structure. The three fan-shaped resistors are distributed along the circumferential direction, and their geometry matches the radiation area of ​​the radiation functional layer.

4. The far-infrared narrowband light source for MEMS according to claim 3, characterized in that, The Y-beam suspension structure integrates three electrical interfaces: a drive end, a sensing end, and a common end. The drive end is used to input energy, the sensing end is used to monitor or regulate temperature, and the common end optimizes thermal response through mechanical and electrical design. All three work together on the same chip.

5. The far-infrared narrowband light source for MEMS according to claim 1, characterized in that, The micro / nano structure array is a periodic micro / nano frustum array, and the frustum array controls the optical modes of the radiation functional layer through geometric parameters to achieve narrowband radiation.

6. The far-infrared narrowband light source for MEMS according to claim 5, characterized in that, Each frustum unit in the periodic micro / nano frustum array has a tapered sidewall structure that causes the effective refractive index of the medium to gradually change along the thickness direction.

7. The far-infrared narrowband light source for MEMS according to claim 1, characterized in that, The substrate is an SOI wafer, and a back cavity is provided on the back side of the substrate. The back cavity is a trapezoidal cavity formed by anisotropic wet etching. The trapezoidal cavity constitutes a pier-type support structure to reduce the contact area between the anchor point and the substrate.

8. The far-infrared narrowband light source for MEMS according to claim 7, characterized in that, The top of the SOI wafer is a heavily doped single-crystal silicon layer, which can absorb back infrared radiation and store heat to generate a self-heating effect.

9. The far-infrared narrowband light source for MEMS according to claim 1, characterized in that, The heating resistance layer is made of platinum and boron-doped polycrystalline silicon, and the light source also includes an electrode layer made of aluminum.

10. The far-infrared narrowband light source for MEMS according to claim 1, characterized in that, The Y-shaped grooves are vertically distributed along the suspension support layer and the heating resistance layer. The Y-shaped grooves divide the Y-beam suspension structure into three centrally symmetrically distributed cantilever beams. One end of each cantilever beam is connected to the anchor point, and the other end together supports the radiation functional layer located at the center.

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