Method for treating glass substrate
By forming a dense, hydrophobic protective layer on the surface of the glass substrate, the problem of insufficient hydrophobicity of the glass substrate is solved, achieving self-cleaning effect and extended service life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SAE TECH DELEVOPMENT DONGGUAN
- Filing Date
- 2024-11-25
- Publication Date
- 2026-05-26
AI Technical Summary
The existing glass substrates have insufficient hydrophobic properties, making it difficult for rainwater to be effectively removed, which affects driving safety and shortens the service life of the glass.
A silicon layer, a carbon layer, a titanium-diamond-like carbon composite layer, and a fluorine-containing protective layer are sequentially deposited on the surface of a glass substrate to form a dense, hydrophobic protective layer, thereby improving hydrophobic properties.
It effectively prevents water droplets, dirt and other substances from remaining on the glass surface, extends the service life of the glass, and reduces the frequency of cleaning through its self-cleaning effect, thus saving cleaning costs.
Abstract
Description
Technical Field
[0001] This invention relates to the field of glass manufacturing, and more particularly to a method for processing glass substrates. Background Technology
[0002] Glass has different requirements depending on its application and field. For example, in the automotive industry, the hydrophobicity of the glass is a high requirement. When driving in the rain, windshield wipers must be used to clean the outer surface of the glass. Whether rainwater can be wiped away effectively depends not only on the quality of the windshield wipers but also on the quality of the glass itself. If the glass has poor hydrophobicity, coupled with the deterioration of the quality of the windshield wipers over time, it will be unable to effectively remove water, affecting driving safety.
[0003] Therefore, there is an urgent need to provide a method for treating glass substrates to improve the hydrophobic properties of glass. Summary of the Invention
[0004] The purpose of this invention is to provide a method for processing glass substrates, forming a dense, hydrophobic protective layer on the surface of the glass to improve its hydrophobic properties, effectively preventing water droplets, dirt, oxides and other substances from remaining on the glass surface for a long time, and extending the service life of the glass.
[0005] To achieve the above objectives, the present invention provides a method for processing a glass substrate, comprising the following steps:
[0006] Depositing a silicon layer on a glass substrate;
[0007] A first transition layer is deposited on the silicon layer, wherein the first transition layer is a carbon layer;
[0008] A second transition layer is deposited on the first transition layer, the second transition layer being a titanium-diamond-like carbon composite layer; and
[0009] A fluorine-containing protective layer is doped onto the second transition layer.
[0010] Compared with existing technologies, this invention sequentially deposits a silicon layer, a first transition layer, a second transition layer, and a fluorine-containing protective layer on the surface of a glass substrate. The first transition layer is a carbon layer, and the second transition layer is a titanium-diamond-like carbon composite layer. In other words, the fluorine-containing protective layer is doped onto the titanium-diamond-like carbon composite layer. The diamond-like carbon and the fluorine-containing protective layer have low surface energy accumulation, resulting in a stronger bond. Simultaneously, the fluorine-containing protective layer has strong hydrophobic properties, allowing water droplets on the glass surface to quickly disperse and drain away. Therefore, the formed film effectively prevents water droplets, dirt, oxides, and other substances from remaining on the glass surface for extended periods, reducing damage and contamination, and extending the glass's lifespan. Furthermore, the formed film allows water to flow in an arc on the glass surface, creating a self-cleaning effect, reducing cleaning frequency, and saving cleaning costs.
[0011] In a preferred embodiment, the deposition of the silicon layer includes: controlling the vacuum level of the chamber to be 2.0 × 10⁻⁶. -1 Up to 2.5×10 -1 Pa, argon gas is introduced, the ion source power is controlled at 5-7.5kW, the workpiece negative bias voltage is 130-150V, and the silicon target sputtering power is 2.0-3.0kW.
[0012] In a preferred embodiment, the silicon layer is deposited for 10-30 minutes.
[0013] In a preferred embodiment, the deposition of the first transition layer includes controlling the vacuum level of the chamber to be 2.0 × 10⁻⁶. -3 Up to 2.5×10 -3 Pa, argon gas is introduced, the carbon target current is controlled at 1.0-1.5A, the workpiece negative bias voltage is 150-180V, and the bias voltage frequency is 150-160kHz.
[0014] In a preferred embodiment, the deposition of the second transition layer includes: controlling the vacuum level of the chamber to be greater than 3.5 × 10⁻⁶. -3 Pa, nitrogen gas is introduced, the current of carbon target and titanium target is controlled, the workpiece negative bias voltage is 150-160V, and the bias frequency is 110-130kHz.
[0015] In a preferred embodiment, the sputtering time of the carbon target is longer than that of the titanium target.
[0016] In a preferred embodiment, the carbon target and the titanium target are first sputtered together for a predetermined time, after which the sputtering of the titanium target is stopped while the sputtering of the carbon target is maintained.
[0017] In a preferred embodiment, the doping of the fluorine-containing protective layer includes: using carbon tetrafluoride as the doping gas, controlling the ion energy to be 500-600 eV, and the ion beam density to be 200-300 μA / cm². 2 The doping time is 30-50 minutes.
[0018] In a preferred embodiment, the deposition rate of the fluorine-containing protective layer is
[0019] In a preferred embodiment, the thickness of the fluorine-containing protective layer is 15-20 nanometers. Detailed Implementation
[0020] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific implementation methods of this application are described in detail below with reference to some embodiments. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0021] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0022] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0023] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.
[0024] The method for processing the glass substrate of the present invention will be further described below with reference to embodiments, but this does not limit the present invention. The method of the present invention aims to provide a method for processing a glass substrate, forming a dense, hydrophobic protective layer on the surface of the glass to improve the hydrophobic properties of the glass, effectively preventing water droplets, dirt, oxides and other substances from remaining on the glass surface for a long time, and extending the service life of the glass.
[0025] Specifically, one embodiment of the glass substrate processing method of the present invention includes the following steps:
[0026] Depositing a silicon layer on a glass substrate;
[0027] A first transition layer is deposited on the silicon layer, wherein the first transition layer is a carbon layer;
[0028] A second transition layer is deposited on the first transition layer, the second transition layer being a titanium-diamond-like carbon composite layer; and
[0029] A fluorine-containing protective layer is doped onto the second transition layer.
[0030] This invention involves sequentially depositing a silicon layer, a first transition layer, a second transition layer, and a fluorine-containing protective layer on the surface of a glass substrate. The first transition layer is a carbon layer, and the second transition layer is a titanium-diamond-like carbon composite layer. In other words, the fluorine-containing protective layer is doped onto the titanium-diamond-like carbon composite layer. The diamond-like carbon and the fluorine-containing protective layer have low surface energy accumulation, resulting in a stronger bond. Simultaneously, the fluorine-containing protective layer has strong hydrophobic properties, allowing water droplets on the glass surface to quickly disperse and drain away. Therefore, the formed film effectively prevents water droplets, dirt, oxides, and other substances from remaining on the glass surface for extended periods, reducing damage and contamination, and extending the glass's lifespan. Furthermore, the formed film allows water to flow in an arc on the glass surface, creating a self-cleaning effect, reducing cleaning frequency, and saving cleaning costs.
[0031] In a specific embodiment, the glass substrate is first ultrasonically cleaned to facilitate subsequent deposition processes. Specifically, the ultrasonic cleaning solution can be NMP (N-methylpyrrolidone) immersion and IPA (isopropanol). Preferably, the temperature of the cleaning solution is 30-40°C, and the ultrasonic cleaning time is 30-40 minutes. More preferably, it is then rinsed thoroughly with deionized water.
[0032] Next, a silicon layer was deposited on the glass substrate. The silicon layer was deposited by sputtering a silicon target, and the deposition parameters were as follows: the vacuum level of the chamber was controlled at 2.0 × 10⁻⁶. -1 Up to 2.5×10 -1 At Pa, argon gas is introduced, the ion source power is controlled at 5-7.5kW, the workpiece negative bias voltage is 130-150V, and the silicon target sputtering power is 2.0-3.0kW. Specifically, the argon gas flow rate is 180-220sccm, the deposition time is 10-30 minutes, and the silicon layer thickness is 20-30 nanometers.
[0033] Next, the first transition layer, namely the carbon layer, is deposited using magnetron sputtering ion plating. Specifically, the temperature of the chamber is maintained within 25-30°C, and the vacuum level is 2.0 × 10⁻⁶. -3 Up to 2.5×10 -3Pa, then argon gas (purity 99.99%) is introduced, the gas pressure is controlled at 1.5-2.0 Pa, the carbon target current is controlled at 1.0-1.5 A, the workpiece negative bias voltage is 150-180 V, the bias voltage frequency is 150-160 kHz, and the thickness of the first transition layer is 30-40 nanometers.
[0034] Subsequently, a second transition layer, namely a titanium-diamond-like carbon composite layer (Ti / DLC composite layer), was deposited using magnetron sputtering ion plating to control the vacuum level of the chamber to be greater than 3.5 × 10⁻⁶. -3 Nitrogen gas is introduced, and the currents of the carbon and titanium targets are controlled. The workpiece negative bias voltage is 150-160V, and the bias frequency is 110-130kHz. Specifically, after introducing nitrogen gas, the gas pressure is controlled at 1.5-2.5Pa. The titanium target current is controlled at 0.5-1.0A, and the carbon target current at 2.0-2.5A. First, the carbon and titanium targets are sputtered together for a predetermined time, such as 30-40 minutes. After that, the sputtering of the titanium target is stopped, while the sputtering of the carbon target is continued, for example, for another 10-15 minutes. That is to say, during the entire sputtering process, the sputtering time of the carbon target is longer than that of the titanium target. Thus, a Ti / DLC composite layer with a thickness of approximately 10-15 nanometers is obtained.
[0035] Next, fluorine doping was performed to create a fluorine-containing protective layer at the interface of the Ti / DLC composite layer, thereby improving the hydrophobic and oleophobic properties of the film. Specifically, CF4 was selected as the dopant gas, and the fluorine-containing protective layer was formed using radio frequency chemical vapor deposition (RFCVD). The dopant gas flow rate was 150-200 sccm, the ion energy was 500-600 eV, the ion beam density was 200-300 μA / cm², and the vacuum degree was 3.5 × 10⁻⁶. -4 At a vacuum level of Pa, with a doping time of 30-50 minutes, the fluorine deposition rate is approximately... To avoid fluoride ions etching the deposited diamond-like carbon film, zero-bias doping with fluoride is selected, and the fluoride deposition thickness is 15-20 nanometers.
[0036] A fluorine-containing protective layer is doped onto the titanium-diamond-like carbon composite layer. The diamond-like carbon and the fluorine-containing protective layer have low surface energy accumulation, resulting in a stronger bond. Simultaneously, the fluorine-containing protective layer has strong hydrophobic properties, allowing water droplets on the glass surface to quickly disperse and drain away. Therefore, the formed film effectively prevents water droplets, dirt, oxides, and other substances from remaining on the glass surface for extended periods, reducing damage and contamination, and extending the glass's lifespan. Furthermore, the formed film allows water to flow in an arc on the glass surface, creating a self-cleaning effect, reducing cleaning frequency, and saving cleaning costs.
[0037] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.
Claims
1. A method for processing a glass substrate, comprising the following steps: Depositing a silicon layer on a glass substrate; A first transition layer is deposited on the silicon layer, wherein the first transition layer is a carbon layer; A second transition layer is deposited on the first transition layer, the second transition layer being a titanium-diamond-like carbon composite layer; and A fluorine-containing protective layer is doped onto the second transition layer.
2. The method for processing a glass substrate as described in claim 1, characterized in that, The deposition of the silicon layer includes: controlling the vacuum level of the chamber to be 2.0 × 10⁻⁶. -1 Up to 2.5×10 -1 Pa, argon gas is introduced, the ion source power is controlled at 5-7.5kW, the workpiece negative bias voltage is 130-150V, and the silicon target sputtering power is 2.0-3.0kW.
3. The method for processing a glass substrate as described in claim 2, characterized in that, The deposition time for the silicon layer is 10-30 minutes.
4. The method for processing a glass substrate as described in claim 1, characterized in that: The deposition of the first transition layer includes controlling the vacuum level of the chamber to be 2.0 × 10⁻⁶. -3 Up to 2.5×10 -3 Pa, argon gas is introduced, the carbon target current is controlled at 1.0-1.5A, the workpiece negative bias voltage is 150-180V, and the bias voltage frequency is 150-160kHz.
5. The method for processing a glass substrate as described in claim 1, characterized in that, The deposition of the second transition layer includes controlling the vacuum level of the chamber to be greater than 3.5 × 10⁻⁶. -3 Pa, nitrogen gas is introduced, the current of carbon target and titanium target is controlled, the workpiece negative bias voltage is 150-160V, and the bias frequency is 110-130kHz.
6. The method for processing a glass substrate as described in claim 5, characterized in that, The sputtering time for the carbon target is longer than that for the titanium target.
7. The method for processing a glass substrate as described in claim 6, characterized in that, The carbon target and the titanium target are first sputtered together for a predetermined time, after which the sputtering of the titanium target is stopped while the sputtering of the carbon target continues.
8. The method for processing a glass substrate as described in claim 1, characterized in that, The doping of the fluorine-containing protective layer includes: using carbon tetrafluoride as the doping gas, controlling the ion energy to be 500-600 eV, and the ion beam density to be 200-300 μA / cm². 2 The doping time is 30-50 minutes.
9. The method for processing a glass substrate as described in claim 8, characterized in that: The deposition rate of the fluorine-containing protective layer is 10. The method for processing a glass substrate as described in claim 1, characterized in that: The thickness of the fluorine-containing protective layer is 15-20 nanometers.