Semiconductor grade propylene glycol methyl ether acetate, and methods and systems for making same
By employing a series of dehydration, light component removal, acid removal, heavy component removal, deionization, and microparticle removal processes, the problem of substandard propylene glycol methyl ether acetate products in existing technologies has been solved. This enables the high-purity and efficient preparation of semiconductor-grade propylene glycol methyl ether acetate, meeting the solvent requirements of high-end photoresists.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHINA PETROLEUM & CHEMICAL CORP
- Filing Date
- 2024-11-28
- Publication Date
- 2026-05-29
AI Technical Summary
Existing technologies cannot effectively control the metal ions, acid value, and moisture content in propylene glycol methyl ether acetate, resulting in product quality that cannot meet the standards for solvents used in the preparation of high-end photoresists.
Semiconductor-grade propylene glycol methyl ether acetate is prepared by using a dehydration tower, a light-light ...heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-light-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-heavy-
The obtained semiconductor-grade propylene glycol methyl ether acetate product has a purity of up to 99.99 wt%, moisture content ≤ 50 ppm, acid value < 10 ppm, single metal ion content ≤ 10 ppt, single anion content ≤ 5 ppb, and particle content ≤ 10 particles/ml, meeting the requirements for matching solvents of high-end semiconductor photoresists.
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Figure CN122102906A_ABST