Method for manufacturing a wiring substrate
By repeatedly irradiating multiple target areas on a glass substrate with laser to form modified parts, and then removing the modified parts by etching to form through holes, the problem of cracks caused by narrow spacing between adjacent holes is solved by using a method of irradiating non-adjacent target areas with laser. This achieves high-precision glass substrate processing.
CN122138339APending Publication Date: 2026-06-02IBIDEN CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- IBIDEN CO LTD
- Filing Date
- 2025-11-25
- Publication Date
- 2026-06-02
AI Technical Summary
Technical Problem
When drilling holes in a glass substrate, cracks are easily generated when the spacing between adjacent holes is narrow.
Method used
By repeatedly irradiating multiple target areas on a glass substrate with laser to form modified parts, and then removing the modified parts by etching to form through holes, stress accumulation is suppressed and cracks are avoided by using a method of irradiating non-adjacent target areas with laser at intervals.
Benefits of technology
It effectively suppressed the generation of cracks around the through holes, improving the reliability and processing accuracy of the glass substrate.
✦ Generated by Eureka AI based on patent content.
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Figure CN122138339A_ABST
Abstract
A method for manufacturing a wiring substrate is provided to suppress cracking around through-holes. The method includes the steps of: repeatedly irradiating a plurality of target regions (T1-T8) arranged linearly in a glass substrate with a laser to form a plurality of modified portions; and removing the plurality of modified portions by etching to form a plurality of through-holes in the plurality of target regions (T1-T8). The step of forming the modified portions includes the steps of: irradiating a first target region with a laser; and immediately after irradiating the first target region with a laser, irradiating a second target region with a laser, wherein the second target region is a target region other than an adjacent target region adjacent to the first target region.
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