A perovskite laminated battery laser scribing and slicing all-in-one machine and a processing technology thereof

Abstract

The application provides a perovskite laminated battery laser scribing and slicing all-in-one machine and a processing technology thereof, which comprises a workbench, a moving mechanism arranged on the workbench, a suction stage arranged at the moving end of the moving mechanism, a laser assembly comprising a laser, an external light path structure and a galvanometer unit, a visual assembly comprising a detection unit for detecting a battery piece and a positioning unit for positioning the battery piece, and the detection unit, the positioning unit, the external light path structure and the galvanometer unit are all located above the workbench. The application has the functions of scribing and slicing, reduces intermediate transfer, secondary feeding and positioning time, greatly improves productivity, and in addition, the processing steps of the technology can effectively protect the material performance of the perovskite battery assembly, and avoid damage to the perovskite performance due to local overheating.

Description

Technical Field

[0001] This invention relates to the field of laser processing technology, and in particular to a laser scribing and slicing machine for perovskite tandem solar cells and its processing technology. Background Technology

[0002] In the battery manufacturing process, laser scribing (also known as laser etching) and battery slicing are two core steps. Laser scribing is used to etch precise P1, P2, and P3 lines on the thin film to enable series connection of sub-cells; the P4 line is used for edge insulation of the module. Battery slicing involves cutting large-area cells or modules into independent units of the required specifications. Currently, these two processes are usually completed by separate equipment, and existing equipment has the following drawbacks: 1. The function is limited and cannot meet the needs of two processes at the same time. The battery substrate needs to be transferred between two machines, and the loading and unloading and alignment need to be done twice, resulting in low work efficiency.

[0003] 2. Imperfect process cannot effectively protect the performance of perovskite battery module materials, and the performance of perovskite is easily damaged due to local overheating. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the present invention aims to provide a laser scribing and slicing integrated machine for perovskite tandem solar cells and its processing technology. This machine has scribing and slicing functions, reduces intermediate transfer, secondary loading and unloading, and alignment time, and greatly improves productivity. In addition, the processing steps of this technology can effectively protect the performance of perovskite solar cell module materials and avoid damage to perovskite performance due to local overheating.

[0005] The embodiments of the present invention are achieved through the following technical solutions: A laser scribing and slicing machine for perovskite tandem solar cells includes: A workbench, wherein a moving mechanism is provided on the workbench, and an adsorption platform is provided at the moving end of the moving mechanism; Laser components, including laser, external optical path structure, and galvanometer unit; The vision component includes a detection unit for detecting solar cells and a positioning unit for positioning solar cells; the detection unit, the positioning unit, the external optical path structure, and the galvanometer unit are all located above the worktable.

[0006] According to a preferred embodiment, the adsorption stage includes a positioning block, a carrier plate, a sealing gasket, and a negative pressure manifold arranged from top to bottom.

[0007] A laser processing technology for perovskite tandem solar cells specifically includes the following steps: Step S100: Use a silicon wafer that has been polished and passivated on the back and has deposited TCO or silicon-based heterojunction electrodes as a substrate, place it on a vacuum stage and fix it with adsorption; start the positioning unit to position and establish the processing reference. Step S200: Isolation trenches are etched on the TCO or silicon-based heterojunction electrode to divide the bottom electrode into independent strips; The etching process employs a linear scanning method, ensuring the etching depth fully penetrates the electrode layer without damaging the underlying silicon substrate, thus completing the etching of the P1 line. Step S300 includes steps S301, S302 and S303; Step S301: A perovskite light-absorbing layer and a hole transport layer are deposited sequentially on the substrate to complete the fabrication of the perovskite top cell. Step S302: The perovskite layer and transport layer are etched through to expose the bottom electrode at the P1 line below, and at the same time, a series channel between sub-cells is formed. Step S303: The positioning unit accurately locates the position of line P1, and uses a laser with energy less than 10uJ and scanning speed greater than 30m / s to clean and etch the surface film; immediately use a finely tuned laser with energy greater than 10uJ to complete the penetration, ensuring that the topography of the connection area is steep and that the thermal impact on the perovskite active area is minimized, thus completing the perovskite stack deposition and P2 line etching. Step S400: Deposit metal or transparent conductive oxide as the front electrode and then return to isolate the front electrode; By aligning with a vision component, the laser etching depth is controlled to penetrate only the front electrode layer without damaging the underlying perovskite layer; P3 line etching is completed, and it is ensured that the P3 line is precisely parallel to the P2 line and their positions are matched. Step S500: Perform insulating etching on the edge of the battery assembly and cut the entire stacked battery into a predetermined number of independent small batteries.

[0008] According to a preferred embodiment, the method further includes step S600, which involves performing online comprehensive inspection and unloading of the battery assembly; the line scanning camera performs a rapid comprehensive imaging of all scribing and cutting edges, and then the vacuum is released to remove the processed battery cell array.

[0009] According to a preferred embodiment, before step S100, the process includes starting the perovskite tandem solar cell laser scribing and slicing machine, preheating the laser, setting the adsorption stage temperature to 25°C, loading the corresponding process formula in the control software, and importing the designed solar cell graphic file.

[0010] According to a preferred embodiment, in step S100, the substrate is placed at the positioning edge of the adsorption stage, and vacuum adsorption is initiated; positioning is completed using the positioning unit.

[0011] According to a preferred embodiment, in step S200, the starting positions of the adsorption stage and the laser component are adjusted; a 532nm picosecond laser is selected as the laser and is aligned and processed through the external optical path structure and the galvanometer unit; the galvanometer unit scans according to the P1 line pattern, with a power of 8W, a frequency of 400kHz, and a speed of 2.5m / s to complete the TCO layer isolation. After completing the TCO layer isolation, the substrate is removed, and the perovskite layer, Spiro-OMeTAD layer, and MoOx / ITO front electrode are deposited.

[0012] According to a preferred embodiment, in step S300, the substrate is adjusted to return to the initial position, and the P1 line is identified and positioned using the positioning unit. First, it is scanned once with 4W power and 4m / s speed, and then precisely etched through to the TCO layer with 6W power and 1.5m / s speed. The vision component provides real-time feedback to ensure that the etching stops at the TCO layer interface.

[0013] According to a preferred embodiment, in step S400, after the positioning unit is positioned, P3 line etching is performed with parameters of power 5.5W, speed 2m / s, and the depth is strictly controlled within the ITO layer. In step S500, a green laser is used with a power of 30W to etch a ring around the edge of the substrate to remove all functional layers. In this process, all functional layers are removed by slicing. The laser power is adjusted to 18W and a pulse mode is used. The processing head processes along the set processing trajectory in the Y direction and along the X direction, and scans the cutting path at a speed of 0.8m / s in one go to complete the separation of the small battery.

[0014] According to a preferred embodiment, in step S600, the detection unit performs rapid detection on all lines and cut edges, and generates a report showing that the average line width of P2 is 20.5μm, the standard deviation is 0.8μm, the cutting width is 45μm, and the back edge chipping depth is <15μm; if all indicators are qualified, the material is cut to the qualified area; if one of the indicators is unqualified, the material is cut to the unqualified area.

[0015] The technical solutions of the embodiments of the present invention have at least the following advantages and beneficial effects: This invention features an integrated adsorption platform clamping system on the workbench and a vision component to eliminate alignment errors between processes. Combined with coaxial vision and process monitoring, it ensures consistent alignment accuracy and processing quality between layers, significantly improving product yield. Furthermore, it has scribing and slicing functions, reducing intermediate transfers, secondary loading and unloading, and alignment time, greatly increasing productivity.

[0016] The processing steps of this technology can effectively protect the performance of perovskite battery module materials, avoid damage to perovskite performance due to local overheating, improve the final performance of the battery, and have strong compatibility, high flexibility, convenience and easy maintenance. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of a laser scribing and slicing machine for perovskite tandem solar cells provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the adsorption stage provided in an embodiment of the present invention. Icons: 1. Workbench; 2. Laser; 3. External optical path structure; 4. Galvanometer unit; 5. Positioning unit; 6. Detection unit; 7. Positioning block; 8. Carrier plate; 9. Negative pressure busbar; 10. Silicon wafer. Detailed Implementation

[0019] To better understand and implement this invention, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings.

[0020] In the description of this invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Example

[0022] Please refer to Figures 1 to 2 A laser scribing and slicing machine for perovskite tandem solar cells includes: a worktable 1, on which a moving mechanism is provided, and an adsorption stage is provided at the moving end of the moving mechanism; a laser assembly including a laser 2, an external optical path structure 3, and a galvanometer unit 4; and a vision assembly including a detection unit 6 for detecting solar cells and a positioning unit 5 for positioning solar cells; the detection unit 6, the positioning unit 5, the external optical path structure 3, and the galvanometer unit 4 are all located above the worktable 1.

[0023] Preferably, the adsorption stage includes a positioning block 7, a carrier plate 8, a sealing gasket, and a negative pressure manifold 9 arranged from top to bottom.

[0024] A laser processing technology for perovskite tandem solar cells specifically includes the following steps: Step S100: The silicon wafer 10, which has been polished and passivated on the back and deposited with TCO or silicon-based heterojunction electrodes, is used as a substrate and placed on a vacuum stage and fixed by adsorption; the positioning unit is started to position and establish the processing reference. Step S200: Isolation trenches are etched on the TCO or silicon-based heterojunction electrode to divide the bottom electrode into independent strips; Among them, linear scanning etching is used; the etching depth completely penetrates the electrode layer without damaging the underlying silicon substrate, thus completing the etching of the P1 line; also known as back electrode isolation, it can select parameters of high frequency and medium pulse energy, and use linear scanning etching.

[0025] Step S300 includes steps S301, S302 and S303; Step S301: A perovskite light-absorbing layer and a hole transport layer are deposited sequentially on the substrate to complete the fabrication of the perovskite top cell. Step S302: The perovskite layer and transport layer are etched through to expose the bottom electrode at the P1 line below, and at the same time, a series channel between sub-cells is formed. In step S303, the positioning unit 5 accurately positions the P1 line and uses a laser with energy less than 10uJ and a scanning speed greater than 30m / s to clean and etch the surface film. Immediately afterward, a laser with a finely tuned energy greater than 10uJ is used to complete the penetration, ensuring that the morphology of the connection area is steep and that the thermal impact on the perovskite active area is minimized, thus completing the perovskite stack deposition and P2 line etching. The green laser can be adjusted from less than 10uJ (lower energy) to greater than 10uJ (higher energy) for processing.

[0026] Step S400: Deposit metal or transparent conductive oxide as the front electrode and then return to isolate the front electrode; complete the electrical definition of a single sub-cell.

[0027] By aligning with a vision component, the laser etching depth is controlled to penetrate only the front electrode layer without damaging the underlying perovskite layer; P3 line etching is completed, and it is ensured that the P3 line is precisely parallel to the P2 line and their positions are matched. Step S500: Insulation etching is performed on the edge of the battery assembly, and the entire 300×300mm stacked battery is cut into a predetermined number (e.g., 6×6=36 pieces) of individual small batteries. Further, the composite processing head is switched to a long focal depth cutting spot, and the linear motor drives the focusing lens group to perform a high-speed, single-pass scanning along the predetermined cutting path (usually parallel or perpendicular to lines P1 / P3). The cutting speed and power are optimized to ensure good edge perpendicularity, a narrow heat-affected zone, and no back-side chipping.

[0028] Preferably, the process also includes step S600, which involves online comprehensive inspection and unloading of the battery assembly; a line scan camera performs a rapid comprehensive imaging of all scribing and cutting edges, then releases the vacuum and removes the processed battery cell array.

[0029] Preferably, before step S100, the process includes starting the perovskite tandem solar cell laser scribing and slicing machine, preheating the laser 2, and setting the adsorption stage temperature to 25°C; loading the corresponding process formula in the control software and importing the designed cell graphic file. Specifically, the process formula corresponding to "perovskite / crystalline silicon solar cell" is loaded in the control software, and the designed cell graphic file (containing 1.5mm wide sub-cell strips and a 5×5 cutting array) is imported.

[0030] Preferably, in step S100, the substrate is placed at the positioning stop of the adsorption stage, and vacuum adsorption is started; positioning is completed using the positioning unit 5.

[0031] Preferably, in step S200, the adsorption stage and the starting position of the laser component are adjusted; a 532nm picosecond laser 2 is selected as the laser 2, and it is aligned and processed through the external optical path structure 3 and the galvanometer unit 4; the galvanometer unit 4 scans according to the P1 line pattern, with a power of 8W, a frequency of 400kHz, and a speed of 2.5m / s to complete the TCO layer isolation. After completing the TCO layer isolation, the substrate is removed, and the perovskite layer, Spiro-OMeTAD layer, and MoOx / ITO front electrode are deposited.

[0032] Preferably, in step S300, the substrate is adjusted to return to its initial position (its physical position is the same as the first height), and the P1 line is identified and located using a vision component. First, it is scanned once with 4W power and 4m / s speed, and then precisely etched through to the TCO layer with 6W power and 1.5m / s speed. The vision component provides real-time feedback to ensure that the etching stops at the TCO layer interface.

[0033] Preferably, in step S400, after the positioning unit is positioned, P3 line etching is performed with parameters of power 5.5W, speed 2m / s, and the depth is strictly controlled within the ITO layer; In step S500, a green laser 2 is used with a power of 30W to etch a ring around the edge of the substrate to remove all functional layers. In this process, all functional layers are removed by slicing. The laser power is adjusted to 18W and a pulse mode is used. The processing head processes along the set processing trajectory in the Y direction and along the X direction, and scans the cutting path at a speed of 0.8m / s in one go to complete the separation of the small battery.

[0034] Preferably, in step S600, the detection unit 6 performs rapid detection on all lines and cut edges, and generates a report showing that the average line width of P2 is 20.5μm, the standard deviation is 0.8μm, the cutting width is 45μm, and the back edge chipping depth is <15μm; if all indicators are qualified, the material is cut to the qualified area; if one of the indicators is unqualified, the material is cut to the unqualified area.

[0035] Working principle of the invention: In this embodiment, all etching mentioned refers to laser etching, also known as laser scribing. Specifically, this invention can be used for laser scribing and slicing of 300×300mm perovskite / crystalline silicon tandem solar cells. This solution aims to achieve high-precision, high-efficiency, and high-consistency "one-stop" processing through equipment integration and process optimization, significantly improving pilot-scale R&D efficiency and product yield. The adsorption stage, as the equipment foundation, can use a high-stability natural granite marble base, on which a precision vacuum adsorption stage is integrated. This adsorption stage is a square substrate design with dimensions of 300×300mm±5mm, the adsorption area is highly matched to the substrate size, and adjustable positioning blocks 7 are provided at the edges to ensure rapid, repeatable positioning accuracy better than ±10μm. In this embodiment, the worktable 1 can be integrated with a temperature control module, which can precisely control the temperature within the range of 15-30℃ to stabilize the thermal environment during laser processing. In this embodiment, the positioning unit 5 can use a high-resolution area array camera to quickly identify the mechanical reference edge and optical alignment marks on the substrate before processing, establishing a workpiece coordinate system. The galvanometer unit 4 can be mounted on the composite laser processing head. The galvanometer unit 4 may include a high-speed scanning galvanometer and a long-stroke focusing lens group driven by a linear motor for switching processing modes of slicing and scribing. Two laser beams are guided to the same composite laser processing head through a high-speed optical path switching and beam combining unit in the external optical path structure 3. Specifically, the positioning unit 5 is a local coaxial vision module. Before scribing lines P2 and P3, the positioning unit 5 can penetrate the upper thin film to accurately position the processed pattern (such as line P1) on the lower layer, achieving an interlayer alignment accuracy of ±5μm.

[0036] The TCO mentioned in this invention is a transparent conductive oxide with a crystalline silicon substrate deposited on the front side of the solar cell. The substrate size can be a 300×300mm silicon wafer 10. Specifically, in this embodiment, the high-speed optical path switching and beam combining unit is located within the external optical path structure, and the galvanometer unit 4 and the focusing lens group driven by the linear motor are located within the composite laser processing head; a dust removal hood can be provided below the composite laser processing head. In this embodiment, the sealing gasket is located between the carrier plate 8 and the negative pressure busbar 9, and is not shown by reference numerals. The sealing gasket has several through holes. The size of the adsorption stage in this embodiment is compatible with different specifications from small laboratory samples (e.g., 10mm×10mm) to large-area modules (not less than 300mm×300mm). In this embodiment, the galvanometer unit 4 also includes a field lens, which is adapted to F63-F330. The laser 2 used in this embodiment can meet the process requirements in the 266-570nm wavelength range. Laser 2 can be selected as a green (532nm) or ultraviolet (355nm) picosecond / femtosecond laser 2, used to perform fine scribing of P1, P2, and P3 lines on heat-sensitive thin films (including perovskite light-absorbing layers, transmission layers, etc.). Its beam quality (M²<1.3) and pulse energy stability (±2%) have been specially optimized to meet the requirement of consistent scribing width (P2 line width 20±2μm) within a 300×300mm range.

[0037] In this embodiment, a monitoring module may also be selected, which includes a plasma-emitting diode (LIP) detector and a line scan camera. The detection unit may include the monitoring module. The LIP detector monitors the plasma signal during the laser etching process in real time, and is used for closed-loop control of the etching depth to a set value; the line scan camera performs a preliminary scan of the width and defects immediately after each line is processed.

[0038] The technical means disclosed in this invention are not limited to those disclosed in the above embodiments, but also include technical solutions composed of any combination of the above technical features. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of this invention, and these improvements and modifications are also considered within the scope of protection of this invention.

Claims

1. A laser scribing and slicing machine for perovskite tandem solar cells, characterized in that, include: A workbench, wherein a moving mechanism is provided on the workbench, and an adsorption platform is provided at the moving end of the moving mechanism; Laser components, including laser, external optical path structure, and galvanometer unit; The vision component includes a detection unit for detecting solar cells and a positioning unit for positioning solar cells; the detection unit, the positioning unit, the external optical path structure, and the galvanometer unit are all located above the worktable.

2. The integrated laser scribing and slicing machine for perovskite tandem solar cells according to claim 1, characterized in that, The adsorption stage includes a positioning block, a carrier plate, a sealing gasket, and a negative pressure manifold, arranged from top to bottom.

3. A laser processing technology for perovskite tandem solar cells, employing the integrated laser scribing and slicing machine for perovskite tandem solar cells as described in any one of claims 1-2, characterized in that, Specifically, the following steps are included: Step S100: Use a silicon wafer that has been back-side polished and passivated and has deposited TCO or silicon-based heterojunction electrodes as a substrate, and place it on a vacuum stage and fix it by adsorption. Start the positioning unit to establish a machining reference. Step S200: Isolation trenches are etched on the TCO or silicon-based heterojunction electrode to divide the bottom electrode into independent strips; The etching process employs a linear scanning method, ensuring the etching depth fully penetrates the electrode layer without damaging the underlying silicon substrate, thus completing the etching of the P1 line. Step S300 includes steps S301, S302 and S303; Step S301: A perovskite light-absorbing layer and a hole transport layer are deposited sequentially on the substrate to complete the fabrication of the perovskite top cell. Step S302: The perovskite layer and transport layer are etched through to expose the bottom electrode at the P1 line below, and at the same time, a series channel between sub-cells is formed. In step S303, the positioning unit accurately locates the position of line P1, and uses a laser with energy less than 10uJ and scanning speed greater than 30m / s to clean and etch the surface film; immediately, a finely tuned laser with energy greater than 10uJ is used to complete the penetration, ensuring that the morphology of the connection area is steep, and completing the perovskite stack deposition and P2 line etching. Step S400: Deposit metal or transparent conductive oxide as the front electrode and then return to isolate the front electrode; By aligning with a vision component, the laser etching depth is controlled to penetrate only the front electrode layer without damaging the underlying perovskite layer; P3 line etching is completed, and it is ensured that the P3 line is precisely parallel to the P2 line and their positions are matched. Step S500: Perform insulating etching on the edge of the battery assembly and cut the entire stacked battery into a predetermined number of independent small batteries.

4. The laser processing technology for perovskite tandem solar cells according to claim 3, characterized in that, It also includes step S600, which performs online comprehensive inspection and unloading of the battery assembly; the line scan camera performs a rapid comprehensive imaging of all scribing and cutting edges, and then releases the vacuum to remove the processed battery cell array.

5. The laser processing technology for perovskite tandem solar cells according to claim 3, characterized in that, Before step S100, the process includes starting the perovskite tandem solar cell laser scribing and slicing machine, preheating the laser, setting the adsorption stage temperature to 25°C, loading the corresponding process formula in the control software, and importing the designed solar cell graphic file.

6. The laser processing technology for perovskite tandem solar cells according to claim 3, characterized in that, In step S100, the substrate is placed at the positioning edge of the adsorption stage, and vacuum adsorption is started; positioning is completed using the positioning unit.

7. The laser processing technology for perovskite tandem solar cells according to claim 3, characterized in that, In step S200, the adsorption stage and the starting position of the laser component are adjusted; a 532nm picosecond laser is selected as the laser and is aligned and processed through the external optical path structure and the galvanometer unit; the galvanometer unit scans according to the P1 line pattern, with a power of 8W, a frequency of 400kHz, and a speed of 2.5m / s to complete the TCO layer isolation. After completing the TCO layer isolation, the substrate is removed, and the perovskite layer, Spiro-OMeTAD layer, and MoOx / ITO front electrode are deposited.

8. The laser processing technology for perovskite tandem solar cells according to claim 3, characterized in that, In step S300, the substrate is adjusted to return to the initial position, and the P1 line is identified and positioned using the positioning unit. First, it is scanned once with 4W power and 4m / s speed, and then precisely etched through to the TCO layer with 6W power and 1.5m / s speed. The vision component provides real-time feedback to ensure that etching stops at the TCO layer interface.

9. The laser processing technology for perovskite tandem solar cells according to claim 3, characterized in that, In step S400, after the positioning unit is positioned, P3 line etching is performed with parameters of power 5.5W, speed 2m / s, and the depth is strictly controlled within the ITO layer. In step S500, a green laser is used with a power of 30W to etch a ring around the edge of the substrate to remove all functional layers. In this process, all functional layers are removed by slicing. The laser power is adjusted to 18W and a pulse mode is used. The processing head processes along the set processing trajectory in the Y direction and along the X direction, and scans the cutting path at a speed of 0.8m / s in one go to complete the separation of the small battery.

10. The laser processing technology for perovskite tandem solar cells according to claim 3, characterized in that, In step S600, the detection unit performs rapid detection on all lines and cut edges, and generates a report showing that the average line width of P2 is 20.5μm and the standard deviation is 0.8μm; The cutting width is 45μm, and the back edge chipping depth is <15μm. If all indicators are qualified, the material is cut to the qualified area; if any one indicator is unqualified, the material is cut to the unqualified area.

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