Semiconductor device structure and method of fabricating the same

By employing a grooved structure and epitaxial layer design with different doping concentrations in SiC MPS diodes, the junction depth of the PN junction is increased, solving the problem of slow reverse recovery speed of SiC MPS diodes and achieving faster reverse recovery characteristics.

CN122180084APending Publication Date: 2026-06-09GUANGDONG XINYUENENG SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGDONG XINYUENENG SEMICON CO LTD
Filing Date
2026-03-05
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Existing planar SiC MPS diodes have limited shielding capability of the PN junction against the electric field of the Schottky contact surface during reverse blocking, and the reverse recovery speed cannot be further improved.

Method used

By adopting a trench structure design, trenches are formed in the epitaxial structure and ion implantation is performed to form epitaxial layers with different doping concentrations, thereby increasing the junction depth of the PN junction. Ohmic contact layers and Schottky contacts are formed at the bottom of the trenches to optimize the reverse recovery waveform.

Benefits of technology

This improves the shielding capability of the PN junction against the electric field of the Schottky contact surface during reverse blocking, shortens the reverse recovery time, and achieves faster reverse recovery characteristics.

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Abstract

The application relates to a semiconductor device structure and a preparation method thereof, which comprises the following steps: a substrate structure; an epitaxial structure of a first conductive type on the front surface of the substrate structure; a groove structure comprising a first groove and a second groove; a first ion implantation region of a second conductive type in the epitaxial structure and below the bottom of the first groove; a second ion implantation region of the second conductive type in the epitaxial structure and below the bottom of the second groove; an ohmic contact layer on the bottom of the first groove; and a first electrode in the first groove, in the second groove and on the exposed surface of the epitaxial structure away from the substrate structure. The semiconductor device structure of the application adopts a groove type structure, solves the problem of shallow ion implantation depth of the second conductive type in the epitaxial structure, increases the junction depth of a PN junction, improves the shielding capacity of the PN junction to the electric field of a Schottky contact surface during reverse blocking, and improves the reverse recovery speed.
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