ZnO / Bi2S3 photosensitization synergistic photothermal sensitization NO2 gas sensing material and preparation method thereof

By fabricating a ZnO/Bi2S3 heterojunction structure, the NO2 detection performance of the gas sensor is improved at room temperature by utilizing photothermal synergy. This solves the problems of high-temperature operation of traditional gas sensors and low efficiency of photoactivated gas sensors, and realizes low-power and high-efficiency gas detection.

CN122254550APending Publication Date: 2026-06-23CHANGCHUN UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-31
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing gas sensors operate at high temperatures, leading to decreased thermal stability, high safety risks, and increased power consumption. Furthermore, photoactivated gas sensors have low light energy utilization efficiency and cannot effectively detect NO2.

Method used

A ZnO/Bi2S3 heterojunction structure was prepared by a combination of template method and hydrothermal method. The gas sensing performance was improved at room temperature through photothermal synergy. The ZnO and Bi2S3 heterojunction structure was used to excite photogenerated electrons and holes under 365nm and 810nm light illumination, respectively, to reduce recombination rate and improve sensor responsiveness.

Benefits of technology

The sensor significantly improved its gas sensing response to NO2 at room temperature, reduced power consumption, enhanced sensor stability and selectivity, and achieved low-power, high-efficiency gas detection.

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Abstract

The application relates to a ZnO / Bi2S3 photosensitization synergistic photothermal sensitization NO2 gas sensing material and a preparation method thereof, and belongs to the technical fields of nanomaterial preparation, atmospheric environment detection and gas sensors, and has a good application prospect. The characteristic is that porous ZnO precursors are prepared first, and then are combined with Bi2S3 to prepare ZnO / Bi2S3, porous ZnO particles are distributed on the outer wall of the flower-like Bi2S3, the recombination rate of electrons and holes is reduced by means of a type II heterojunction, and the gas sensing performance is improved. Under 365 nm light activation, the response value of the ZnO / Bi2S3 sensor to 100 ppm NO2 at room temperature is 1.73 times that under thermal activation (dark, 60 DEG C); 810 nm near-infrared light provides light activation and photothermal synergistic effect, the surface temperature of the gas sensor is increased to 47 DEG C, and the response value to 100 ppm NO2 is increased to 21.77.
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