Preparation of chemical resistance type gas sensor based on polyoxometallate and application of chemical resistance type gas sensor in room-temperature ammonia gas detection
The chemiluminescence gas sensor fabricated using SnO2/POMs composite material solves the problem of insufficient performance of traditional metal oxide semiconductor gas sensors at room temperature, achieving high sensitivity and rapid response to ammonia, and is suitable for environmental monitoring and smart healthcare.
CN122084699APending Publication Date: 2026-05-26JILIN INST OF CHEM TECH
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Patent Information
- Application Number
- CN202610283916.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-10
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
Existing metal oxide semiconductor gas sensors struggle to achieve high sensitivity, rapid response and recovery performance, and excellent selectivity at room temperature, making it difficult to effectively detect ammonia.
Method used
A chemical resistance gas sensor was prepared by using SnO2/POMs composite material as the sensitive layer and by impregnation combined with liquid grinding method. The electron acceptor properties of POMs were utilized to form a composite material with SnO2, thereby improving the gas sensing performance.
Benefits of technology
It achieves high sensitivity, rapid response and recovery time, and excellent selectivity for ammonia at room temperature, making it suitable for environmental monitoring and smart healthcare.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses a chemical resistance type gas sensor based on polyoxometallate (POMs), and relates to a preparation method and application of the sensor, and the sensor is suitable for detecting ammonia gas in a room temperature environment. The gas sensor comprises a switching base and a sensing element, the sensing element is composed of an interdigital electrode plate and a sensitive material loaded on the surface of the electrode plate, and the sensitive material is a composite material composed of POMs and SnO2. POMs is used as an excellent electron acceptor, has good oxidation-reduction performance, thermal stability and photosensitivity, and can effectively inhibit electron-hole pair compounding after being compounded with SnO2, so that the gas-sensitive performance of the semiconductor material is remarkably improved. Compared with the prior art, the sensor provided by the invention has the characteristic of high response to ammonia gas at room temperature, and shows excellent selectivity and repeatability at the same time.
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