Semiconductor processing apparatus, pressure control method and opening valve
By dividing the process chamber into two independent chambers, and using the cross-section control unit to adjust the flow cross-section, the problem of slow pressure switching speed of vacuum valves in semiconductor processes is solved, and rapid pressure regulation is achieved.
CN122270090AActive Publication Date: 2026-06-23SHANGHAI ATOMIC QIZHI SEMICONDUCTOR EQUIPMENT CO LTD
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Patent Information
- Application Number
- CN202610746218.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-05-28
- Publication Date
- 2026-06-23
- Estimated Expiration
- 2046-05-28
AI Technical Summary
Technical Problem
In existing technologies, the inertia of the valve plate itself and the self-control of the pressure control mode of vacuum valves cannot meet the needs of frequent and rapid pressure adjustment, especially in atomic layer etching or Bosch processes, where the pressure switching speed is slow.
Method used
By dividing the process chamber into two independent chambers, and adjusting the flow cross-section using the cross-section control unit, rapid pressure switching can be achieved.
Benefits of technology
It enables rapid rise and fall of intracavity pressure, making it suitable for semiconductor processes requiring frequent and rapid voltage regulation, especially atomic layer etching and Bosch processes.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses a semiconductor processing apparatus, a pressure control method and an opening valve. According to the semiconductor processing device, a process cavity is divided into a first cavity (a substrate processing area) and a second cavity (a pre-vacuumizing area) through a section control part, and the section control part can adjust the size of a circulation section between the two cavities. The pressure control method comprises the steps that the vacuum pump continuously vacuumizes the second cavity; during boosting, the circulation cross section is reduced (kept larger than zero), low-pressure process gas in the previous stage is smoothly discharged, meanwhile, the first cavity is boosted, and the second cavity forms a low-pressure area; during pressure reduction, the circulation section is increased, and pressure reduction of the first cavity is achieved through the pressure difference of the two cavities. The opening valve adopts a structure that the baffle is matched with the coaxial rotating shielding piece, and opening switching can be achieved only through directional rotation. According to the scheme, the pressure switching speed is increased, and the method is suitable for a semiconductor process needing frequent and rapid pressure regulation.
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