Ion beam etching system, cleaning mechanism and method of using ion beam etching system

Abstract

The application discloses an ion beam etching system, a cleaning mechanism and a use method of the ion beam etching system. The ion beam etching system is used for preparing a display panel. The ion beam etching system comprises a process chamber, a supporting table, an etching mechanism and a cleaning mechanism. The process chamber comprises a bottom wall, a side wall connected to a side of the bottom wall, and a containing space formed by the bottom wall and the side wall. The supporting table is arranged on one side of the bottom wall in a first direction and is used for carrying a substrate to be etched. The etching mechanism is arranged on a side of the supporting table away from the bottom wall and is arranged in a spaced mode with the supporting table. The etching mechanism comprises an excitation electrode, and the excitation electrode comprises a through hole arranged in a penetrating mode. The cleaning mechanism is arranged on a side of the etching mechanism away from the supporting table. The cleaning mechanism comprises a body part and a plurality of cleaning nozzles arranged on the body part. The body part is arranged in a rotatable mode relative to the etching mechanism, so that the ion beam etching system can be switched between a cleaning mode and an etching mode.

Description

Technical Field

[0001] This application relates to the field of etching processes, specifically to an ion beam etching system, a cleaning mechanism, and a method of using the ion beam etching system. Background Technology

[0002] Organic light-emitting diode (OLED) and flat panel display devices based on light-emitting diode (LED) technologies are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body and wide range of applications, becoming the mainstream of display devices.

[0003] OLED display panels require an array substrate, including driving circuitry, to drive the light-emitting units to emit light. The array substrate comprises stacked semiconductor layers, conductive layers, and insulating layers, which need to be patterned to meet application requirements. Etching is one of the key processes for patterning these semiconductor, conductive, and insulating layers; therefore, improving etching process performance is crucial for increasing the yield of the array substrate. Summary of the Invention

[0004] This application provides an ion beam etching system, a cleaning mechanism, and a method for using the ion beam etching system, with the aim of improving the etching process yield.

[0005] An embodiment of the first aspect of this application provides an ion beam etching system for fabricating a display panel. The ion beam etching system includes: a process chamber comprising a bottom wall, side walls connected to the periphery of the bottom wall, and a receiving space enclosed by the bottom wall and the side walls; a support stage disposed on one side of the bottom wall in a first direction and used to support a substrate to be etched; an etching mechanism disposed on the side of the support stage opposite to the bottom wall and spaced apart from the support stage, the etching mechanism including an excitation electrode having a through-hole; and a cleaning mechanism disposed on the side of the etching mechanism opposite to the support stage. On one side of the stage, the cleaning mechanism includes a main body and multiple cleaning nozzles disposed on the main body. The main body is rotatably disposed relative to the etching mechanism so that the ion beam etching system can switch between cleaning mode and etching mode. In cleaning mode, the main body is located on the side of the excitation electrode in the first direction, and the cleaning nozzles are located on the side of the main body facing the excitation electrode so that cleaning medium can be sprayed onto the excitation electrode through the cleaning nozzles. In etching mode, the main body is rotated to the side of the sidewall, and the cleaning nozzles are located on the side of the main body away from the sidewall so that etching gas can pass through the through hole.

[0006] According to the implementation of the first aspect of this application, it also includes:

[0007] The recycling mechanism includes a recycling pump body and a recycling pipe. A discharge hole is provided on the bottom wall. One end of the recycling pipe is connected to the discharge hole, and the other end of the recycling pipe is connected to the recycling pump body.

[0008] According to any of the foregoing embodiments of the first aspect of this application, the recovery pump body is located outside the process chamber.

[0009] According to any of the foregoing embodiments of the first aspect of this application, there are multiple discharge holes, and each discharge hole is connected to a recycling pipe.

[0010] According to any of the foregoing embodiments of the first aspect of this application, a plurality of discharge holes are spaced apart on the periphery of the support platform.

[0011] According to any of the foregoing embodiments of the first aspect of this application, a plurality of discharge holes are evenly distributed around the periphery of the support platform.

[0012] According to any of the foregoing embodiments of the first aspect of this application, the cleaning mechanism further includes a fixing part, which is fixedly connected to the side of the body part facing the excitation electrode, so that the body part and the excitation electrode are spaced apart in the cleaning mode.

[0013] According to any of the foregoing embodiments of the first aspect of this application, the main body is rotatably disposed relative to the fixed part, so that it can be rotatably disposed relative to the etching mechanism.

[0014] According to any of the foregoing embodiments of the first aspect of this application, the cleaning mechanism further includes a cleaning pipeline connected to the fixing part and connected to the main body part via the fixing part.

[0015] According to any of the foregoing embodiments of the first aspect of this application, the end of the cleaning pipeline away from the fixed part extends out of the process chamber.

[0016] According to any of the foregoing embodiments of the first aspect of this application, the number of cleaning mechanisms is one, and one end of the body of the cleaning mechanism is rotatably disposed relative to the etching mechanism. In the cleaning mode, the projection of the excitation electrode along the first direction is located within the projection of the body along the first direction; or, the number of cleaning mechanisms is multiple, and in the cleaning mode, the body parts of the multiple cleaning mechanisms are arranged side by side, and the projection of the excitation electrode along the first direction is located within the projection of the multiple body parts along the first direction.

[0017] According to any of the foregoing embodiments of the first aspect of this application, there are multiple cleaning mechanisms, and the opposite ends of the multiple body parts are rotatably arranged relative to the etching mechanism.

[0018] According to any of the foregoing embodiments of the first aspect of this application, an anti-corrosion layer is provided on the inner wall surface of the excitation electrode facing the through hole.

[0019] According to any of the foregoing embodiments of the first aspect of this application, the material of the anti-corrosion layer includes at least one of alumina and silicon carbide.

[0020] An embodiment of the second aspect of this application provides a cleaning mechanism for an ion beam etching system. The ion beam etching system includes a process chamber and a support stage and an etching mechanism disposed within the process chamber. The cleaning mechanism includes: a fixing part for fixing within the process chamber; a body part connected to the fixing part; and cleaning nozzles, with multiple cleaning nozzles spaced apart on the body part. The body part is rotatably disposed relative to the fixing part so that it is rotatable relative to the etching mechanism. The ion beam etching system can switch between a cleaning mode and an etching mode. In the cleaning mode, the body part is located on one side of the excitation electrode in a first direction, and the cleaning nozzles are located on the side of the body part facing the etching mechanism so that cleaning media can be sprayed onto the etching mechanism through the cleaning nozzles. In the etching mode, the body part is rotated to one side of the sidewall, and the cleaning nozzles are located on the side of the body part away from the sidewall of the process chamber.

[0021] An embodiment of the third aspect of this application provides a method of using an ion beam etching system, wherein the ion beam etching system is any of the ion beam etching systems described in the first aspect above, and the method of using the ion beam etching system includes:

[0022] To obtain the operating status of the ion beam etching system, which includes cleaning mode and etching mode;

[0023] When the ion beam etching system is in cleaning mode, the excitation electrode is turned off, and the body is rotated relative to the etching mechanism to the side of the excitation electrode in the first direction. The cleaning nozzle is located on the side of the body facing the excitation electrode, and the cleaning medium is sprayed onto the excitation electrode through the cleaning nozzle.

[0024] When the ion beam etching system is in etching mode, the main body is rotated to the side with the sidewall facing the receiving space, at least part of the surface of the excitation electrode away from the bottom wall is exposed, and the excitation electrode is turned on.

[0025] In the ion beam etching system provided in the first aspect embodiment of this application, the ion beam etching system includes a process chamber, a support stage, an etching mechanism, and a cleaning mechanism. The process chamber includes a bottom wall and side walls, which enclose a space for performing a dry etching process. The support stage is located within the space and on one side of the bottom wall, and is used to support the substrate to be etched. The etching mechanism includes an excitation electrode with a through-hole, allowing the generated plasma to reach the substrate to be etched and complete the etching process. The cleaning mechanism is disposed on the etching mechanism and is used to clean the etching mechanism. The body of the cleaning mechanism is rotatably disposed relative to the etching mechanism, allowing the ion beam etching system to switch between a cleaning mode and an etching mode. In the cleaning mode, the cleaning nozzle is located on the side of the body facing the excitation electrode, and a cleaning medium can be sprayed towards the excitation electrode through the cleaning nozzle, thereby cleaning impurities remaining in the through-hole of the excitation electrode and improving the uniformity of the etching process. In etching mode, the main body can rotate to one side of the sidewall, exposing the excitation electrode. This mitigates the impact of the cleaning mechanism obstructing the excitation electrode, which could affect its normal operation. Therefore, by providing a cleaning mechanism within the process chamber, this application ensures that rotating the main body to one side of the sidewall in etching mode does not affect the normal progress of the etching process. In cleaning mode, the cleaning nozzle can clean the inner wall surface of the through-hole, improving the uniformity of the etching process and thus increasing the etching yield. Attached Figure Description

[0026] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals denote the same or similar features, and the drawings are not drawn to scale.

[0027] Figure 1 This is a schematic diagram of the structure of an ion beam etching system in cleaning mode according to an embodiment of this application;

[0028] Figure 2 This is a schematic diagram of the structure of an ion beam etching system in etching mode according to an embodiment of this application;

[0029] Figure 3 This is a schematic diagram of the structure of an ion beam etching system in cleaning mode according to another embodiment of this application;

[0030] Figure 4 This is a schematic diagram of the structure of an ion beam etching system in cleaning mode, provided in another embodiment of this application;

[0031] Figure 5 This is a schematic diagram of the structure of an ion beam etching system in etching mode according to another embodiment of this application;

[0032] Figure 6 This is a top view of an ion beam etching system provided in an embodiment of this application;

[0033] Figure 7 This is a top view of an ion beam etching system provided in another embodiment of this application;

[0034] Figure 8 This is a top view of an ion beam etching system provided in another embodiment of this application;

[0035] Figure 9 This is a top view of an ion beam etching system provided in another embodiment of this application;

[0036] Figure 10 This is a schematic diagram of the usage method of an ion beam etching system provided in an embodiment of this application.

[0037] Explanation of reference numerals in the attached figures:

[0038] 100. Process chamber; 110. Bottom wall; 111. Discharge port; 120. Side wall; 130. Accommodation space; 140. Top cover component; 141. Air inlet;

[0039] 200. Support platform;

[0040] 300 Etching mechanism; 310 Excitation electrode; 320 Through hole; 321 Anti-corrosion layer;

[0041] 400. Cleaning mechanism; 410. Main body; 420. Cleaning nozzle; 430. Fixing part; 440. Cleaning pipeline;

[0042] 500. Recycling mechanism; 510. Recycling pump body; 520. Recycling pipeline;

[0043] Z, first direction; Y, second direction; X, third direction. Detailed Implementation

[0044] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0045] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0046] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0047] OLED display panels require an array substrate including a driving circuit to drive the light-emitting units to emit light. The array substrate includes stacked semiconductor layers, conductive layers, and insulating layers. For example, the array substrate may include a substrate and a first conductive layer, a second conductive layer, and a third conductive layer stacked on one side of the substrate. An insulating layer is disposed between adjacent conductive layers. Exemplarily, a pixel circuit is disposed on the array substrate, and the pixel driving circuit includes a transistor and a storage capacitor. The transistor includes a semiconductor, a gate, a source, and a drain. The source and drain can be connected to the semiconductor through vias in the insulating layer. The storage capacitor includes a first electrode and a second electrode. As an example, the gate and the first electrode can be located on the first conductive layer, the second electrode can be located on the second conductive layer, and the source and drain can be located on the third conductive layer. In addition, OLED display panels typically include a touch layer structure. The first conductive layer, second conductive layer, third conductive layer and touch layer mentioned above are usually formed by magnetron sputtering to create a metal thin film. The metal thin film is then patterned to form conductive structures such as gate, capacitor plate, data signal line, voltage signal line and touch signal line.

[0048] In related technologies, dry etching equipment includes a vacuum chamber and an etching component located within the vacuum chamber. The etching component has through-holes through which plasma can be sprayed onto the substrate to be etched. During long-term use of the dry etching equipment, reactive gases can remain on the inner wall of the through-holes, causing the through-hole diameter to decrease or even become blocked. This affects the uniformity of the etching process and leads to problems such as localized under-etching of the substrate.

[0049] To address the aforementioned technical problems, this application is proposed. Embodiments of this application provide a dry ion beam etching system, a gas analysis device, and a display panel. The following description, in conjunction with the accompanying drawings, will illustrate various embodiments of the ion beam etching system, the gas analysis device, and the display panel.

[0050] Please refer to the following: Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the structure of an ion beam etching system in cleaning mode according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a gas analysis device in etching mode of an ion beam etching system provided in an embodiment of this application.

[0051] like Figure 1 and Figure 2 As shown, an embodiment of the first aspect of this application provides an ion beam etching system for fabricating a display panel. The ion beam etching system includes: a process chamber 100, comprising a bottom wall 110, side walls 120 connected to the periphery of the bottom wall 110, and a receiving space 130 formed by the bottom wall 110 and the side walls 120; a support stage 200, disposed on one side of the bottom wall 110 in a first direction Z and used to support the substrate to be etched; an etching mechanism 300, disposed on the side of the support stage 200 away from the bottom wall 110 and spaced apart from the support stage 200, the etching mechanism 300 including an excitation electrode 310, the excitation electrode 310 including a through hole 320; and a cleaning mechanism 400 disposed on the side of the etching mechanism 300 away from the support stage 110. On one side of the stage 200, the cleaning mechanism 400 includes a body 410 and a plurality of cleaning nozzles 420 disposed on the body 410. The body 410 is rotatably disposed relative to the etching mechanism 300 so that the ion beam etching system can switch between cleaning mode and etching mode. In cleaning mode, the body 410 is located on the side of the excitation electrode 310 in the first direction Z, and the cleaning nozzles 420 are located on the side of the body 410 facing the excitation electrode 310 so that cleaning medium can be sprayed onto the excitation electrode 310 through the cleaning nozzles 420. In etching mode, the body 410 is rotated to the side of the sidewall 120, and the cleaning nozzles 420 are located on the side of the body 410 away from the sidewall 120 so that etching gas can pass through the through hole 320.

[0052] In the ion beam etching system provided in the first aspect embodiment of this application, the ion beam etching system includes a process chamber 100, a support stage 200, an etching mechanism 300, and a cleaning mechanism 400. The process chamber 100 includes a bottom wall 110 and a side wall 120, which enclose a receiving space 130 for performing a dry etching process. The support stage 200 is located within the receiving space 130 and on one side of the bottom wall 110, and is used to support the substrate to be etched. The etching mechanism 300 includes an excitation electrode 310, which includes a through-hole 320, allowing the generated plasma to reach the substrate to be etched and complete the etching process. The cleaning mechanism 400 is disposed on the etching mechanism 300 and is used to clean the etching mechanism 300. The main body 410 of the cleaning mechanism 400 is rotatably configured relative to the etching mechanism 300, allowing the ion beam etching system to switch between cleaning and etching modes. In cleaning mode, the cleaning nozzle 420 is located on the side of the main body 410 facing the excitation electrode 310. The cleaning nozzle 420 sprays cleaning media towards the excitation electrode 310, thereby cleaning residual impurities within the through-hole 320 of the excitation electrode 310 and improving the uniformity of the etching process. In etching mode, the main body 410 can rotate to one side of the sidewall 120, exposing the excitation electrode 310. This mitigates the impact on the normal operation of the excitation electrode 310 caused by the cleaning mechanism 400 obstructing it. Therefore, by providing a cleaning mechanism 400 in the process chamber 100, the main body 410 rotates to one side of the sidewall 120 in the etching mode, which will not affect the normal progress of the etching process. In the cleaning mode, the cleaning nozzle 420 can clean the inner wall surface of the through hole 320, improve the uniformity of the etching process, and thus improve the etching process yield.

[0053] Optionally, the process chamber 100 can be a vacuum chamber to provide a vacuum environment for the dry etching process. Optionally, the sidewall 120 can also enclose an opening opposite to the bottom wall 110 in the first direction Z, and a top cover component 140 can be provided at the opening. Optionally, the top cover component 140 can be provided with an air inlet 141, through which etching gas can be introduced into the process chamber 100. Optionally, an air inlet pipe can also be provided within the air inlet 141, extending into the receiving space 130 to reduce the distance between the end of the air inlet pipe and the excitation electrode 310.

[0054] Optionally, dry etching can be used to fabricate array substrates for display panels, such as gates, data signal lines, scan signal lines, or vias on the insulating layer of the array substrate.

[0055] Optionally, the support carrier can be a glass substrate, which gives the support carrier good structural strength and rigidity, as well as advantages such as low manufacturing cost, high efficiency, and smooth surface.

[0056] Optionally, the excitation electrode 310 may include an electromagnetic coil, for example, the excitation electrode 310 may include a mesh coil. The excitation electrode 310 includes a support portion and a mesh coil disposed on the support portion, a through hole 320 is disposed through the support portion, and the mesh coil is disposed around the through hole 320.

[0057] Optionally, the cleaning medium can be a gas, such as an inert gas. For example, the cleaning medium includes chlorine gas. Alternatively, in other embodiments, the cleaning medium can also be a liquid such as water vapor.

[0058] In some alternative embodiments, such as Figure 1 and Figure 2 As shown, the ion beam etching system also includes a recovery mechanism 500, which includes a recovery pump body 510 and a recovery pipe. The bottom wall 110 is provided with a discharge hole 111. One end of the recovery pipe is connected to the discharge hole 111, and the other end of the recovery pipe is connected to the recovery pump body 510.

[0059] In these optional embodiments, the ion beam etching system is further provided with a recovery mechanism 500, which can be used to recover impurities cleaned by the cleaning nozzle 420. A recovery pipe is connected between the discharge port 111 and the recovery pump body 510, so that impurities can enter the recovery pump body 510 through the discharge port 111 and the recovery pipe.

[0060] Optionally, the recovery pump body 510 can also apply negative pressure to the recovery pipeline, so that impurities can be quickly returned to the recovery pump body 510.

[0061] In some alternative embodiments, the recovery pump body 510 is located outside the process chamber 100.

[0062] In these alternative embodiments, by placing the recovery pump body 510 outside the process chamber 100, the recovery pump body 510 will not occupy the space within the accommodating space 130, thus ensuring the smooth operation of the dry etching process.

[0063] Optionally, the recovery pipe is located outside the process chamber 100, and the recovery pipe connects the discharge port 111 and the recovery pump body 510 outside the process chamber 100, so that the recovery pipe does not occupy the space within the containment space 130.

[0064] Optionally, the recycling mechanism 500 may also include structures for impurity cleaning and impurity discharge to treat the recycled impurities. The recycling mechanism 500 may also include filter components to filter impurities. For example, the filter components may be located at the inlet of the recycling pump body 510 to reduce the amount of impurities entering the recycling pump body 510 and improve the service life of the recycling pump body 510.

[0065] There are several ways to set the number of discharge holes 111, for example, the number of discharge holes 111 can be one.

[0066] In other alternative embodiments, there may be multiple discharge holes 111, each of which is connected to a recycling pipe.

[0067] In these optional embodiments, there are multiple discharge holes 111, and each discharge hole 111 is connected to a recycling pipe. The multiple discharge holes 111 are interconnected with the recycling pump body 510. By setting the discharge holes 111, the discharge efficiency of impurities can be improved. On the other hand, the multiple discharge holes 111 can be distributed at different positions on the bottom wall 110, so that impurities at different positions can be discharged to the recycling pump body 510 through the discharge holes 111, thereby reducing the amount of impurities remaining in the containment space 130.

[0068] When there are multiple discharge holes 111, the multiple discharge holes 111 can be distributed at intervals around the support platform 200 so that impurities at different positions around the support platform 200 can be discharged into the recovery pump body 510 through the discharge holes 111.

[0069] In some alternative embodiments, a plurality of discharge holes 111 are evenly distributed around the periphery of the support platform 200.

[0070] In these optional embodiments, the multiple discharge holes 111 are evenly distributed, which on the one hand allows impurities at different positions around the support platform 200 to be discharged to the recovery pump body 510 relatively quickly through the discharge holes 111, and on the other hand improves the uniformity of air pressure at different positions within the containment space 130.

[0071] There are several ways in which the main body 410 can be rotatably configured relative to the etching mechanism 300. For example, the main body 410 can be rotatably connected to the side wall 120, and the main body 410 can rotate relative to the etching mechanism 300 by rotating relative to the side wall 120.

[0072] In some alternative embodiments, such as Figure 3As shown, the cleaning mechanism 400 also includes a cleaning pipe 440, which is connected to the main body 410. When the cleaning medium is gas, cleaning gas can be introduced into the main body 410 through the cleaning pipe 440, so that the cleaning gas is sprayed out from the cleaning nozzle 420 through the main body 410, thereby cleaning the impurities on the inner wall surface of the through hole 320 on the excitation electrode 310.

[0073] When the main body 410 rotates relative to the side wall 120, the side wall 120 is provided with a through hole, and the cleaning pipe 440 is connected to the main body 410 through the through hole.

[0074] In some alternative embodiments, the cleaning mechanism 400 further includes a fixing part 430, which is fixedly connected to the side of the body part 410 facing the excitation electrode 310, so that in the cleaning mode, the body part 410 and the excitation electrode 310 are spaced apart.

[0075] In these optional embodiments, by adding a fixing part 430 to the cleaning mechanism 400, the fixing part 430 can be located between the body part 410 and the excitation electrode 310 in the cleaning mode. Due to the presence of the fixing part 430, a gap can be formed between the body part 410 and the excitation electrode 310, and the gas can better enter the through hole 320 through the gap to clean the inner wall surface of the through hole 320.

[0076] When the cleaning mechanism 400 is provided with a fixing part 430, the fixing part 430 can rotate relative to the etching mechanism 300, so that the body part 410 can rotate relative to the etching mechanism 300.

[0077] Alternatively, in some other alternative embodiments, the body portion 410 is rotatably disposed relative to the fixed portion 430 so that it can be rotatably disposed relative to the etching mechanism 300.

[0078] In these alternative embodiments, the fixing part 430 can be fixed relative to the fixing part 430, and the body part 410 can be rotatably disposed relative to the fixing part 430. When the body part 410 rotates relative to the fixing part 430, the body part 410 can rotate relative to the etching mechanism 300. The fixing part 430 can be fixed relative to the fixing part, which can simplify the structure of the cleaning mechanism 400.

[0079] When the cleaning mechanism 400 includes a fixing part 430, the cleaning pipe 440 can be directly connected to the main body part 410. Alternatively, in some other optional embodiments, the cleaning pipe 440 is connected to the fixing part 430 and connected to the main body part 410 via the fixing part 430.

[0080] In these alternative embodiments, the fixing part 430 can be fixedly disposed relative to the side wall 120, and the cleaning pipe 440 and the relatively fixed fixing part 430 are interconnected, which simplifies the structure of the cleaning mechanism 400. The fixing part 430 is connected to the body part 410, so that the gas in the cleaning pipe 440 can be introduced into the body part 410 through the fixing part 430 and finally sprayed out by the cleaning nozzle 420.

[0081] Optionally, a chamber is provided in the fixing part 430 and a chamber is provided in the body part 410. The body part 410 is rotatably connected to the fixing part 430, and the chamber in the fixing part 430 and the chamber in the body part 410 are interconnected. The cleaning pipe 440 is connected to the chamber in the fixing part 430, and the cleaning nozzle 420 is connected to the chamber in the body part 410, so that gas can be sprayed out from the cleaning pipe 440, the fixing part 430 and the body part 410 and finally from the cleaning nozzle 420.

[0082] Optionally, the cleaning mechanism 400 also includes a drive mechanism, and the cleaning pipeline 440 is connected between the drive mechanism and the fixing part 430 or the body part 410. The drive mechanism can be used to generate cleaning gas, so that the cleaning gas is discharged from the drive mechanism and finally sprayed out by the cleaning nozzle 420 via the cleaning pipeline 440, the fixing part 430 and the body part 410.

[0083] Optionally, the drive mechanism can be located outside the process chamber 100 to reduce the space occupied by the cleaning mechanism 400 within the accommodating space 130. For example, one end of the cleaning pipe 440 away from the fixing part 430 extends outside the process chamber 100, so that the end of the cleaning pipe 440 away from the fixing part 430 can be connected to the drive mechanism outside the process chamber 100.

[0084] There are various ways to set the number of cleaning mechanisms 400. For example, in some optional embodiments, such as... Figure 4 and Figure 5 As shown, there can be one cleaning mechanism 400. One end of the body part 410 of the cleaning mechanism 400 is rotatably connected to the side wall 120. In the cleaning mode, the projection of the excitation electrode 310 along the first direction Z is located within the projection of the body part 410 along the first direction Z.

[0085] In these optional embodiments, there is one cleaning mechanism 400. The end of the body portion 410 of the cleaning mechanism 400 is rotatably disposed relative to the etching mechanism 300. For example, when the cleaning mechanism 400 includes a fixing portion 430, the end of the body portion 410 on the Y side of the second direction is rotatably connected to the fixing portion 430. In the cleaning mode, the projection of the excitation electrode 310 along the first direction Z is located within the projection of the body portion 410 along the first direction Z, that is, the excitation electrode 310 can be completely covered by the body portion 410, so that the multiple cleaning nozzles 420 on the body portion 410 can clean different positions of the excitation electrode 310.

[0086] Optionally, the shape of the excitation electrode 310 projected along the first direction Z is adapted to the shape of the process chamber 100 projected along the first direction Z, for example, as shown in the figure. Figure 6 As shown, the projection of the process chamber 100 along the first direction Z is circular, and the process chamber 100 has a cylindrical structure. The projection of the excitation electrode 310 along the first direction Z can also be circular, and the excitation electrode 310 has a disk-shaped structure. Optionally, the projection of the body portion 410 along the first direction Z and the shape of the projection of the excitation electrode 310 along the first direction Z are adapted to each other, so that in the cleaning mode, the body portion 410 can better cover the excitation electrode 310, and the cleaning nozzle 420 on the body portion 410 can better clean the inner wall surface of the through hole 320 of the excitation electrode 310. For example, when the projection of the excitation electrode 310 along the first direction Z is circular, the projection of the body portion 410 along the first direction Z can be circular or near-circular. The body part 410 is rotatably disposed on either side of the circumferential direction (i.e., the circumferential direction surrounding the first direction Z) relative to the etching mechanism 300. For example, the body part 410 is rotatably disposed on the side of the second direction Y relative to the etching mechanism 300 around a first axis. The axis of the first axis is the third direction X. The second direction Y and the third direction X intersect and are coplanar. The first direction Z is perpendicular to the plane containing the second direction Y and the third direction X.

[0087] Optionally, when the excitation electrode 310 is circular in shape when projected along the first direction Z and the process chamber 100 is cylindrical, the same cleaning mechanism 400 includes multiple body parts 410 arranged side by side along the third direction X. Each body part 410 is provided with a cleaning nozzle 420, and each body part 410 can also be connected with a fixing part 430. The body parts 410 are strip-shaped, so that in the etching mode, each body part 410 can better fit with the cylindrical sidewall 120, thereby reducing the distance between the body part 410 and the sidewall 120 in the etching mode, and thus reducing the obstruction of the excitation electrode 310 by the body part 410.

[0088] Alternatively, in other alternative embodiments, such as Figure 7As shown, the projection of the process chamber 100 along the first direction Z is quadrilateral, and the process chamber 100 is a quadrangular prism. The projection of the excitation electrode 310 along the first direction Z is rectangular, and the projection of the body portion 410 of the cleaning mechanism 400 along the first direction Z is rectangular. The body portion 410 of the cleaning mechanism 400 can be plate-shaped, and one side of the body portion 410 is rotatably disposed relative to the etching mechanism 300.

[0089] In some other alternative embodiments, such as Figure 1 , Figure 2 and Figure 8 , Figure 9 As shown, there are multiple cleaning mechanisms 400. In the cleaning mode, the main body parts 410 of the multiple cleaning mechanisms 400 are arranged side by side, and the projection of the excitation electrode 310 along the first direction Z is located within the projection of the multiple main body parts 410 along the first direction Z.

[0090] In these optional embodiments, there are multiple cleaning mechanisms 400, for example, two cleaning mechanisms 400. In the cleaning mode, the body parts 410 of the multiple cleaning mechanisms 400 are arranged side by side so that the body parts 410 of the multiple cleaning mechanisms 400 do not block each other. The projection of the excitation electrode 310 along the first direction Z is located within the projection of the multiple body parts 410 along the first direction Z, so that the multiple body parts 410 can completely cover the excitation electrode 310, and the cleaning nozzles 420 on the multiple body parts 410 can clean different positions of the excitation electrode 310.

[0091] In some optional embodiments, there are multiple cleaning mechanisms 400, and the opposite ends of multiple body parts 410 are rotatably disposed relative to the etching mechanism 300. For example, the opposite ends of multiple body parts 410 are rotatably connected to the fixing part 430 to realize the rotation of the body parts 410 relative to the etching mechanism 300.

[0092] Optionally, the number of cleaning mechanisms 400 may be two, and the two cleaning mechanisms 400 may be configured in a split configuration, that is, the opposite ends of the main body 410 of the two cleaning mechanisms 400 are rotatably disposed relative to the etching mechanism 300. For example, in cleaning mode, the opposite ends of the two main body 410 are rotatably connected to the fixed part 430, and the opposite ends of the two main body 410 are free ends. When the ion beam etching system switches from cleaning mode to etching mode, the opposite ends of the two main body 410 rotate in a direction away from the excitation electrode 310 and away from each other, so that in etching mode the main body 410 is disposed on one side of the sidewall 120.

[0093] Optional, as above, such as Figure 8As shown, when the projection of the excitation electrode 310 along the first direction Z is circular, and there are two cleaning mechanisms 400, in the cleaning mode, the projection of the body portion 410 of the same cleaning mechanism 400 along the first direction Z is semi-circular. In some alternative embodiments, the number of cleaning mechanisms 400 can also be multiple, and the projection of the body portion 410 of at least one of the multiple cleaning mechanisms 400 along the first direction Z is fan-shaped.

[0094] Optionally, when the projection of the excitation electrode 310 along the first direction Z is circular, and the number of cleaning mechanisms 400 is multiple, the same cleaning mechanism 400 includes multiple body parts 410 arranged side by side along the third direction X. Each body part 410 is provided with a cleaning nozzle 420, and each body part 410 can also be connected with a fixing part 430. The body part 410 is strip-shaped, so that in the etching mode, each body part 410 can better fit with the cylindrical sidewall 120, thereby reducing the distance between the body part 410 and the sidewall 120 in the etching mode, and thus reducing the obstruction of the excitation electrode 310 by the body part 410.

[0095] Optionally, such as Figure 9 As shown, when the projection of the excitation electrode 310 along the first direction Z is rectangular, the same cleaning mechanism 400 may include a body part 410, and the projection of the body parts 410 of multiple cleaning mechanisms 400 along the first direction Z is rectangular.

[0096] In some optional embodiments, the excitation electrode 310 is provided with an anti-corrosion layer 321 facing the inner wall surface of the through hole 320.

[0097] In these optional embodiments, the inner wall surface of the through hole 320 is provided with an anti-corrosion layer 321, which can improve the damage to the inner wall of the through hole 320 caused by plasma on the one hand, and also improve the damage to the inner wall of the through hole 320 when the cleaning medium cleans the inner wall of the through hole 320 on the other hand.

[0098] There are various ways to set the material of the anti-corrosion layer 321. For example, the material of the anti-corrosion layer 321 may include at least one of alumina and silicon carbide. This gives the anti-corrosion layer 321 good density and corrosion resistance.

[0099] like Figures 1 to 9As shown, an embodiment of the second aspect of this application also provides a cleaning mechanism 400, which is used in an ion beam etching system. The ion beam etching system can be any of the ion beam etching systems provided in the first aspect embodiment described above. The ion beam etching system includes a process chamber 100 and a support stage 200 and an etching mechanism 300 disposed within the process chamber 100. The cleaning mechanism 400 includes: a fixing part 430 for fixing within the process chamber 100; a body part 410 connected to the fixing part 430; and cleaning nozzles 420. A plurality of cleaning nozzles 420 are spaced apart on the body part 410, wherein the body part 410 is rotatably disposed relative to the fixing part 430 so that the body part 410 is rotatable relative to the etching mechanism 300. The system can switch between cleaning mode and etching mode. In cleaning mode, the body 410 is located on the side of the excitation electrode 310 in the first direction Z, and the cleaning nozzle 420 is located on the side of the body 410 facing the excitation electrode 310, so that cleaning medium can be sprayed onto the excitation electrode 310 through the cleaning nozzle 420. In etching mode, the body 410 is rotated to the side of the sidewall 120, and the cleaning nozzle 420 is located on the side of the body 410 away from the sidewall 120, so that etching gas can pass through the through hole 320.

[0100] There are several ways to fix the fixing part 430 in the process chamber 100. For example, the fixing part 430 can be fixed to the inner surface of the side wall 120 facing the receiving space 130, or the fixing part 430 can be fixed to the etching mechanism 300, as long as the relative position of the fixing part 430 and the process chamber 100 or the etching mechanism 300 is stable.

[0101] In this embodiment, the cleaning mechanism 400 for an ion beam etching system includes a fixing part 430, a body part 410, and a cleaning nozzle 420. The cleaning mechanism 400 is used to clean the etching mechanism 300. The fixing part 430 can be fixed in the process chamber 100, so that the body part 410 can be located in the process chamber 100 through the fixing part 430. The body part 410 is rotatably disposed relative to the fixing part 430, so that the body part 410 is rotatable relative to the etching mechanism 300. The rotatable disposal of the body part 410 of the cleaning mechanism 400 relative to the etching mechanism 300 allows the ion beam etching system to switch between a cleaning mode and an etching mode. In the cleaning mode, the cleaning nozzle 420 is located on the side of the body part 410 facing the excitation electrode 310. The cleaning medium can be sprayed towards the excitation electrode 310 through the cleaning nozzle 420, thereby cleaning the impurity residue in the through hole 320 of the excitation electrode 310 and improving the uniformity of the etching process. In etching mode, the body 410 can rotate to one side of the sidewall 120, exposing the excitation electrode 310. This improves the normal operation of the excitation electrode 310, which is affected by the cleaning mechanism 400 blocking it. Therefore, by providing a cleaning mechanism 400 in the process chamber 100, the rotation of the body 410 to one side of the sidewall 120 in etching mode does not affect the normal progress of the etching process. In cleaning mode, the cleaning nozzle 420 can clean the inner wall surface of the through hole 320, improving the uniformity of the etching process and thus improving the etching yield.

[0102] The cleaning mechanism 400 provided in the second aspect embodiment of this application can be the cleaning mechanism 400 of the ion beam etching system provided in any of the first aspect embodiments described above. The cleaning mechanism 400 provided in the second aspect embodiment of this application can have the features of the cleaning mechanism 400 of the ion beam etching system provided in any of the first aspect embodiments described above.

[0103] like Figure 10 As shown, an embodiment of the third aspect of this application also provides a method of using an ion beam etching system, which can be the ion beam etching system provided in any of the first aspect embodiments described above. Please refer to the following: Figures 1 to 10 The usage methods of the ion beam etching system include:

[0104] Step S01: Obtain the working status of the ion beam etching system, which includes cleaning mode and etching mode.

[0105] Step S02: When the ion beam etching system is in cleaning mode, turn off the excitation electrode 310, rotate the body part 410 relative to the etching mechanism 300 to the side of the excitation electrode 310 in the first direction Z, and place the cleaning nozzle 420 on the side of the body part 410 facing the excitation electrode 310, and spray cleaning medium onto the excitation electrode 310 through the cleaning nozzle 420.

[0106] Step S03: When the ion beam etching system is in etching mode, rotate the body 410 so that the sidewall 120 faces the receiving space 130, at least part of the surface of the excitation electrode 310 away from the bottom wall 110 is exposed, and turn on the excitation electrode 310.

[0107] The order of steps S02 and S03 is not limited; users can set it according to their actual needs.

[0108] In the method of using the ion beam etching system provided in this application embodiment, the working state of the ion beam etching system is first obtained through step S01. The working state of the ion beam etching system includes cleaning mode and etching mode. In cleaning mode, the through hole 320 of the excitation electrode 310 needs to be cleaned, and in etching mode, the substrate to be etched needs to be etched. In step S02, when it is determined that the working state of the ion beam etching system is cleaning mode, the excitation electrode 310 is turned off, and the body part 410 is rotated relative to the etching mechanism 300 to the side of the excitation electrode 310 in the first direction Z. The cleaning nozzle 420 is located on the side of the body part 410 facing the excitation electrode 310, and the cleaning medium is sprayed onto the excitation electrode 310 through the cleaning nozzle 420, so that the cleaning medium can be sprayed onto the excitation electrode 310, thereby cleaning the inner wall of the through hole 320 and ensuring the uniformity of subsequent etching. In step S03, when the ion beam etching system is in etching mode, the body 410 is rotated to the side of the sidewall 120 facing the receiving space 130, at least part of the surface of the excitation electrode 310 away from the bottom wall 110 is exposed, and the excitation electrode 310 is turned on, so that the etching gas can pass through the through hole 320 and generate plasma, which can bombard the substrate to be etched.

[0109] Optionally, step S02 can be performed after step S03 to clean the inner wall of the through hole 320 in a timely manner after etching, thereby improving the residual impurities on the inner wall of the through hole 320 and ensuring the uniformity of etching in subsequent etching processes.

[0110] An embodiment of the fourth aspect of this application also provides an array substrate for a display panel. The array substrate includes multiple film layers, at least one of which is formed by an ion beam etching system provided in any of the first aspects of the above-described embodiments, or at least one film layer of the array substrate is formed by a method of using an ion beam etching system provided in any of the third aspects of the above-described embodiments. Since at least one film layer of the array substrate in the embodiment of the fourth aspect of this application is formed by an ion beam etching system provided in any of the first aspects of the above-described embodiments, or at least one film layer of the array substrate is formed by a method of using an ion beam etching system provided in any of the third aspects of the above-described embodiments, the array substrate in the embodiment of the fourth aspect of this application has the beneficial effects of the ion beam etching system provided in any of the first aspects of the above-described embodiments, or the array substrate in the embodiment of the fourth aspect of this application has the beneficial effects of the magnetron sputtering method provided in any of the third aspects of the above-described embodiments, which will not be elaborated further here.

[0111] The fifth aspect of this application also provides a display panel including the array substrate provided in any of the fourth aspect embodiments. Since the display panel of the fifth aspect embodiment includes the array substrate of any of the fourth aspect embodiments, it has the beneficial effects of the array substrate of any of the fourth aspect embodiments, which will not be repeated here.

[0112] The display device provided in the sixth aspect of this application may include the display panel of any of the above embodiments. Since the display device provided in the sixth aspect of this application includes the display panel of any of the first aspects, it has the beneficial effects of the display panel of any of the first aspects, which will not be repeated here.

[0113] The display devices in this application include, but are not limited to, mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, control consoles, and other devices with display functions.

[0114] The embodiments described above are not exhaustive and do not limit the invention to specific examples. Clearly, many modifications and variations can be made based on the above description. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to effectively utilize this application and its modifications. This application is limited only by the claims and their full scope and equivalents.

Claims

1. An ion beam etching system, characterized in that, The ion beam etching system is used for the fabrication of a display panel, and the ion beam etching system includes: The process chamber includes a bottom wall, side walls connected to the periphery of the bottom wall, and an accommodating space enclosed by the bottom wall and the side walls; A support platform is disposed on one side of the bottom wall in the first direction and is used to support the substrate to be etched; An etching mechanism is disposed on the side of the support stage away from the bottom wall and spaced apart from the support stage. The etching mechanism includes an excitation electrode, and the excitation electrode includes a through hole. A cleaning mechanism is disposed on the side of the etching mechanism opposite to the support stage. The cleaning mechanism includes a main body and a plurality of cleaning nozzles disposed on the main body. The main body is rotatably disposed relative to the etching mechanism, so that the ion beam etching system can switch between a cleaning mode and an etching mode. In the cleaning mode, the main body is located on the side of the excitation electrode in the first direction, and the cleaning nozzle is located on the side of the main body facing the excitation electrode, so that the cleaning medium can be sprayed onto the excitation electrode through the cleaning nozzle. In the etching mode, the main body is rotated to the side of the sidewall, and the cleaning nozzle is located on the side of the main body away from the sidewall, so that the etching gas can pass through the through hole.

2. The ion beam etching system according to claim 1, characterized in that, Also includes: The recycling mechanism includes a recycling pump body and a recycling pipe. The bottom wall is provided with a discharge hole. One end of the recycling pipe is connected to the discharge hole, and the other end of the recycling pipe is connected to the recycling pump body. Preferably, the recovery pump body is located outside the process chamber.

3. The ion beam etching system according to claim 2, characterized in that, There are multiple discharge holes, and each discharge hole is connected to the recycling pipe; Preferably, the plurality of discharge holes are distributed at intervals around the periphery of the support platform; Preferably, the plurality of discharge holes are evenly distributed around the periphery of the support platform.

4. The ion beam etching system according to claim 1, characterized in that, The cleaning mechanism further includes a fixing part, which is fixedly connected to the side of the body part facing the excitation electrode, so that in the cleaning mode, the body part and the excitation electrode are spaced apart.

5. The ion beam etching system according to claim 4, characterized in that, The main body is rotatably disposed relative to the fixed part, so that it is rotatably disposed relative to the etching mechanism.

6. The ion beam etching system according to claim 5, characterized in that, The cleaning mechanism further includes a cleaning pipeline, which is connected to the fixing part and connected to the main body part via the fixing part; Preferably, the end of the cleaning pipeline opposite to the fixing part extends out of the process chamber.

7. The ion beam etching system according to claim 1, characterized in that, The number of cleaning mechanisms is one, and one end of the body of the cleaning mechanism is rotatably disposed relative to the etching mechanism. In the cleaning mode, the projection of the excitation electrode along the first direction is located within the projection of the body along the first direction. Alternatively, there may be multiple cleaning mechanisms. In the cleaning mode, the main bodies of the multiple cleaning mechanisms are arranged side by side, and the projection of the excitation electrode along the first direction is located within the projection of the multiple main bodies along the first direction. Preferably, there are multiple cleaning mechanisms, and the opposite ends of the multiple body parts are rotatably arranged relative to the etching mechanism.

8. The ion beam etching system according to claim 1, characterized in that, The excitation electrode is provided with an anti-corrosion layer on the inner wall surface facing the through hole; Preferably, the material of the anti-corrosion layer includes at least one of alumina and silicon carbide.

9. A cleaning mechanism, characterized in that, The cleaning mechanism is used in an ion beam etching system, which includes a process chamber, a support stage, and an etching mechanism disposed within the process chamber. The cleaning mechanism includes: The fixing part is used to fix it in the process chamber; The main body is connected to the fixing part; Cleaning nozzles, a plurality of such cleaning nozzles are arranged at intervals on the body portion. The main body is rotatably disposed relative to the fixed part, so that the main body is rotatable relative to the etching mechanism. The ion beam etching system can switch between a cleaning mode and an etching mode. In the cleaning mode, the main body is located on one side of the etching mechanism in a first direction, and the cleaning nozzle is located on the side of the main body facing the etching mechanism, so that the cleaning medium can be sprayed onto the etching mechanism through the cleaning nozzle. In the etching mode, the main body is rotated to one side of the process chamber sidewall, and the cleaning nozzle is located on the side of the main body away from the sidewall.

10. A method of using an ion beam etching system for fabricating a display panel, characterized in that, The ion beam etching system is the ion beam etching system according to any one of claims 1-8, and the method of using the ion beam etching system includes: The operating status of the ion beam etching system is obtained, and the ion beam etching system includes a cleaning mode and an etching mode. When the ion beam etching system is in cleaning mode, the excitation electrode is turned off, and the body is rotated relative to the etching mechanism to the side of the excitation electrode in the first direction. The cleaning nozzle is located on the side of the body facing the excitation electrode, and cleaning medium is sprayed onto the excitation electrode through the cleaning nozzle. When the ion beam etching system is in etching mode, the main body is rotated to the side of the sidewall facing the receiving space, at least a portion of the surface of the excitation electrode away from the bottom wall is exposed, and the excitation electrode is turned on.

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