Gallium antimonide single crystal growth heating device

Abstract

The utility model provides a gallium antimonide single crystal growth heating device, relates to the technical field of semiconductor material production, and aims to solve the problems of large stress, high dislocation, low growth rate and high production cost of grown gallium antimonide single crystals caused by large axial temperature gradient and radial temperature gradient generated around seed crystals in a crystal pulling process at present. The device comprises a heating assembly, a heat preservation assembly and a graphite crucible, the heating assembly comprises an electrode plate and a graphite heating body connected to the electrode plate, and the graphite crucible is arranged in the graphite heating body and used for containing a quartz crucible and raw materials; the heat preservation assembly is arranged on the periphery of the graphite heating body, a gap is formed between the heat preservation assembly and the graphite heating body, the heat preservation assembly comprises a plurality of heat preservation cover layers, and sealing structures are arranged among the heat preservation cover layers, the top face of the heat preservation cover layer on the top layer and the bottom face of the heat preservation cover layer on the bottom layer. The utility model is used for ensuring that the heat dissipation of the heating body is small and the temperature gradient of the crystallization surface is appropriate.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor material production, in particular to a gallium antimonide single crystal growth heating device. Background Art

[0002] The LEC method and liquid-sealed Czochralski method for producing gallium antimonide single crystals rely on a hollow circular graphite heating body to heat the gallium, antimony and dopants placed in the middle graphite and quartz pots. The temperature is then adjusted to allow the molten gallium antimonide compound to gradually grow along the seed crystals inserted from the top. The liquid is gradually and orderly crystallized onto the seed crystals by reasonable vertical and radial temperature gradients at the contact point between the seed crystals and the liquid surface, thereby growing gallium antimonide single crystals.

[0003] The applicant has found that the prior art has at least the following technical problems:

[0004] The heating devices currently used in the LEC method and liquid-sealed Czochralski method for producing GaSb single crystals generate large axial and radial temperature gradients around the seed crystal during the crystal pulling process, resulting in high stress and dislocation in the grown GaSb single crystals, as well as low growth rate and high production cost. Utility Model Content

[0005] The purpose of the utility model is to provide a gallium antimonide single crystal growth heating device to solve the problem that the heating and heat preservation devices used in the current LEC method and liquid-sealed Czochralski method for producing gallium antimonide single crystals have large axial temperature gradients and radial temperature gradients around the seed crystal during the crystal pulling process, resulting in large stress and high dislocation of the grown gallium antimonide single crystal, as well as low growth rate and high production cost. The many technical effects that can be produced by the preferred technical solution among the many technical solutions provided by the utility model are described in detail below.

[0006] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0007] The utility model provides a gallium antimonide single crystal growth heating device, comprising a heating component, a heat preservation component and a graphite crucible, wherein:

[0008] The heating assembly includes an electrode plate and a graphite heating body connected to the electrode plate, and the graphite crucible is placed in the graphite heating body for placing a quartz crucible and raw materials;

[0009] The insulation component is arranged on the periphery of the graphite heating body and a gap is set between the insulation component and the graphite heating body. The insulation component includes multiple insulation cover layers. Sealing structures are set between the multiple insulation cover layers, the top surface of the top insulation cover layer, and the bottom surface of the bottom insulation cover layer.

[0010] Preferably, the thermal insulation cover layer comprises a first thermal insulation structure and a second thermal insulation structure, wherein:

[0011] The first heat-insulating structure is arranged outside the second heat-insulating structure, a containing structure is arranged between the first heat-insulating structure and the second heat-insulating structure, and the containing structure is filled with heat-insulating material.

[0012] Preferably, the thermal insulation assembly comprises at least a first thermal insulation cover layer and a second thermal insulation cover layer of the same structure, wherein:

[0013] The first heat-insulating cover layer is located below the second heat-insulating cover layer, and the top surface of the second heat-insulating cover layer is arranged to be higher than the top surface of the graphite heating body.

[0014] Preferably, the thermal insulation assembly further comprises a heightened thermal insulation cover layer, wherein:

[0015] The heightened thermal insulation cover layer is arranged on the top of the second thermal insulation cover layer, and a sealing structure is arranged between the heightened thermal insulation cover layer and the second thermal insulation cover layer;

[0016] The height dimension of the elevated thermal insulation cover layer is not greater than the height dimensions of the first thermal insulation cover layer and the second thermal insulation cover layer.

[0017] Preferably, the graphite heating body adopts a hollow columnar structure, and the graphite heating body is installed at the center of the electrode plate.

[0018] Preferably, the electrode plate comprises a first electrode plate and a second electrode plate, wherein:

[0019] A first semicircular hole structure is provided on one end of the first electrode plate close to the second electrode plate;

[0020] A second semicircular hole structure is provided on one end of the second electrode plate close to the first electrode plate;

[0021] The first semicircular hole structure and the second semicircular hole structure form a hole structure, and the graphite rod passes through the hole structure and is connected to the bottom of the graphite crucible located in the graphite heating body.

[0022] Preferably, the heating assembly further comprises a quartz ring, wherein:

[0023] The quartz ring is arranged on the electrode plate and is located at the periphery of the graphite heating body;

[0024] The heat preservation component is arranged on the quartz ring, and the sealing structure is arranged between the heat preservation component and the quartz ring.

[0025] Preferably, the sealing structure adopts a graphite gasket.

[0026] The utility model provides a gallium antimonide single crystal growth heating device, which comprises an electrode plate and a graphite heating body connected to the electrode plate, a graphite crucible is placed in the graphite heating body for placing a quartz crucible and raw materials, and a heat preservation component is arranged on the periphery of the graphite heating body, the heat preservation component comprises a plurality of heat preservation cover layers, and sealing structures are arranged between the plurality of heat preservation cover layers, on the top surface of the top heat preservation cover layer, and on the bottom surface of the bottom heat preservation cover layer, so as to ensure that the heat dissipation of the graphite heating body is minimized, so that the temperature gradient of the crystal surface on the upper part of the raw materials is appropriate, thereby improving efficiency and reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 This is a schematic structural diagram of an embodiment of a gallium antimonide single crystal growth heating device of the utility model;

[0029] Figure 2 yes Figure 1 Schematic diagram of the main structure;

[0030] Figure 3 yes Figure 2 AA cross-sectional structure diagram;

[0031] Figure 4 yes Figure 1 Schematic diagram of the structure viewed from above.

[0032] In the figure: 1. heating component; 11. electrode plate; 111. first electrode plate; 112. second electrode plate; 10. first semicircular hole structure; 20. second semicircular hole structure; 100. hole structure; 12. graphite heating body; 13. quartz ring; 2. insulation component; 21. first insulation cover layer; 22. second insulation cover layer; 23. increased insulation cover layer; 201. first insulation structure; 202. second insulation structure; 203. accommodation structure; 3. graphite crucible; 4. sealing structure. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution of the utility model will be described in detail below. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other implementation methods obtained by ordinary technicians in this field without creative work belong to the scope of protection of the utility model.

[0034] In the description of the present invention, it should be understood that the terms "center", "lateral", "length", "width", "height", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "side" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0035] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

[0036] The utility model provides a gallium antimonide single crystal growth heating device. Figure 1 Schematic diagram of the structure of this embodiment. Figure 1 As shown, it includes a heating component 1, a heat preservation component 2 and a graphite crucible 3.

[0037] Among them, the heating assembly 1 includes an electrode plate 11 and a graphite heating body 12 connected to the electrode plate 11. The graphite crucible 3 is placed in the graphite heating body 12 for placing a quartz crucible and raw materials. In this embodiment, the graphite heating body 12 adopts a hollow columnar structure and is installed in the center of the electrode plate 11.

[0038] The heat preservation component 2 is arranged at the periphery of the graphite heating body 12, and a gap is arranged between the heat preservation component 2 and the graphite heating body 12. The heat preservation component 2 includes a plurality of heat preservation cover layers, and a sealing structure 4 is arranged between the plurality of heat preservation cover layers, on the top surface of the top heat preservation cover layer, and on the bottom surface of the bottom heat preservation cover layer. The sealing structure 4 in this embodiment adopts a graphite gasket.

[0039] By setting up the insulation component 2, the heat dissipation of the graphite heating body 12 is minimized. The insulation component 2 includes multiple insulation cover layers. A sealing structure 4 is set between the multiple insulation cover layers, the top surface of the top insulation cover layer, and the bottom surface of the bottom insulation cover layer, so that the temperature gradient of the crystallization surface on the upper part of the raw material is appropriate, thereby improving efficiency and reducing costs.

[0040] As an optional implementation, Figure 2 2 is a schematic diagram of the main structure of this embodiment. Figure 3 yes Figure 2 AA cross-sectional structure diagram, as shown in Figure 2 and Figure 3 As shown, the thermal insulation cover layer includes a first thermal insulation structure 201 and a second thermal insulation structure 202 .

[0041] Among them, the first thermal insulation structure 201 is arranged on the outside of the second thermal insulation structure 202, and a containing structure 203 is arranged between the first thermal insulation structure 201 and the second thermal insulation structure 202, and the containing structure 203 is filled with thermal insulation material. In this embodiment, by setting each layer of the thermal insulation cover layer to include a double-layer structure, and filling the double-layer structure with thermal insulation material, it is further ensured that the heat dissipation during heating by the graphite heating body 12 is minimized.

[0042] In this embodiment, the heat-insulating material filled in the accommodating structure 203 is heat-insulating cotton. Of course, in actual production and use, other heat-insulating materials currently available on the market can also be selected to fill the accommodating structure 203 between the first heat-insulating structure 201 and the second heat-insulating structure 202 according to actual use needs, so as to ensure that the heat-insulating effect meets the use requirements.

[0043] As an optional embodiment, the thermal insulation assembly 2 includes at least a first thermal insulation cover layer 21 and a second thermal insulation cover layer 22 having the same structure.

[0044] The first heat-insulating cover layer 21 is located below the second heat-insulating cover layer 22, and the top surface of the second heat-insulating cover layer 22 is set higher than the top surface of the graphite heating body 12 to ensure that the heat dissipation of the heating body is minimized and the heat-insulating effect is better. And the temperature gradient of the crystal surface on the upper part of the raw material is appropriate.

[0045] Specifically, the insulation component 2 also includes a raised insulation cover layer 23, which is arranged on the top of the second insulation cover layer 22, and a sealing structure 4 is arranged between the raised insulation cover layer 23 and the second insulation cover layer 22; in this embodiment, the height dimension of the raised insulation cover layer 23 is not greater than the height dimension of the first insulation cover layer 21 and the second insulation cover layer 22.

[0046] By setting the heat preservation assembly 2 including the first heat preservation cover layer 21, the second heat preservation cover layer 22 and the heightened heat preservation cover layer 23, the heat dissipation of the graphite heating body 12 is minimized, and the temperature gradient of the crystal surface on the upper part of the raw material is appropriate. Taking a 4-inch gallium antimonide single crystal as an example, the use of this gallium antimonide single crystal growth heating device effectively solves the unreasonable vertical temperature gradient and radial temperature gradient around the seed crystal, and increases the growth success rate of the 4-inch gallium antimonide single crystal produced by the LEC method to more than 98%, effectively improving production efficiency and reducing costs.

[0047] As an optional implementation, Figure 4 : is a schematic diagram of the structure of the present embodiment viewed from above. Figure 4As shown, the electrode plate 11 includes a first electrode plate 111 and a second electrode plate 112, which are respectively used to connect the positive electrode and the negative electrode of the power source.

[0048] Among them, a first semicircular hole structure 10 is provided on one end of the first electrode plate 111 close to the second electrode plate 112; a second semicircular hole structure 20 is provided on one end of the second electrode plate 112 close to the first electrode plate 111. The first semicircular hole structure 10 and the second semicircular hole structure 20 form a hole structure 100. The graphite rod passes through the hole structure 100 and is connected to the bottom of the graphite crucible 3 located in the graphite heating body 12. When in use, the graphite crucible 3 is placed at the center of the graphite heating body 12 through the graphite rod, and the graphite crucible 3 is controlled to rise and fall by the graphite rod.

[0049] As an optional embodiment, the heating component 1 further includes a quartz ring 13. The quartz ring 13 is arranged on the graphite electrode plate 11 and is located at the periphery of the graphite heating body 12; the heat preservation component 2 is arranged on the quartz ring 13, and a sealing structure 4 is arranged between the heat preservation component 2 and the quartz ring 13. The quartz ring 13 is used to support the heat preservation component 2 to prevent the heat preservation component 2 and the sealing structure 4 from being directly placed on the electrode plate 11 and causing a short circuit.

[0050] The above is only a specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the utility model, which should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims

1. A gallium antimonide single crystal growth heating device, characterized in that: It includes a heating component, a heat preservation component and a graphite crucible, wherein: The heating assembly includes an electrode plate and a graphite heating body connected to the electrode plate, and the graphite crucible is placed in the graphite heating body for placing a quartz crucible and raw materials; The insulation component is arranged on the periphery of the graphite heating body and a gap is set between the insulation component and the graphite heating body. The insulation component includes multiple insulation cover layers. Sealing structures are set between the multiple insulation cover layers, the top surface of the top insulation cover layer, and the bottom surface of the bottom insulation cover layer.

2. The gallium antimonide single crystal growth heating device according to claim 1, characterized in that: The thermal insulation cover layer comprises a first thermal insulation structure and a second thermal insulation structure, wherein: The first heat-insulating structure is arranged outside the second heat-insulating structure, a containing structure is arranged between the first heat-insulating structure and the second heat-insulating structure, and the containing structure is filled with heat-insulating material.

3. A gallium antimonide single crystal growth heating device according to claim 1 or 2, characterized in that: The thermal insulation assembly comprises at least a first thermal insulation cover layer and a second thermal insulation cover layer of the same structure, wherein: The first heat-insulating cover layer is located below the second heat-insulating cover layer, and the top surface of the second heat-insulating cover layer is arranged to be higher than the top surface of the graphite heating body.

4. The gallium antimonide single crystal growth heating device according to claim 3, characterized in that: The thermal insulation assembly also includes a heightened thermal insulation cover layer, wherein: The heightened thermal insulation cover layer is arranged on the top of the second thermal insulation cover layer, and a sealing structure is arranged between the heightened thermal insulation cover layer and the second thermal insulation cover layer; The height dimension of the heightened thermal insulation cover layer is not greater than the height dimensions of the first thermal insulation cover layer and the second thermal insulation cover layer.

5. A gallium antimonide single crystal growth heating device according to claim 1 or 2, characterized in that: The graphite heating body adopts a hollow columnar structure and is installed at the center of the electrode plate.

6. The gallium antimonide single crystal growth heating device according to claim 5, characterized in that: The electrode plate comprises a first electrode plate and a second electrode plate, wherein: A first semicircular hole structure is provided on one end of the first electrode plate close to the second electrode plate; A second semicircular hole structure is provided on one end of the second electrode plate close to the first electrode plate; The first semicircular hole structure and the second semicircular hole structure form a hole structure, and the graphite rod passes through the hole structure and is connected to the bottom of the graphite crucible located in the graphite heating body.

7. A gallium antimonide single crystal growth heating device according to claim 1 or 2, characterized in that: The heating assembly further comprises a quartz ring, wherein: The quartz ring is arranged on the electrode plate and is located at the periphery of the graphite heating body; The heat preservation component is arranged on the quartz ring, and the sealing structure is arranged between the heat preservation component and the quartz ring.

8. A gallium antimonide single crystal growth heating device according to claim 1 or 2, characterized in that: The sealing structure adopts a graphite gasket.

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