Semiconductor packaging unit, IGBT packaging structure and IGBT device
The semiconductor packaging unit addresses CLIP interference and instability by employing a CLIP structure with a large CLIP part and specific bridge design, enhancing stability and heat dissipation while maintaining a flexible layout, thus reducing short circuit risks and improving mounting efficiency.
Patent Information
- Application Number
- CN202420533664.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-19
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2034-03-19
AI Technical Summary
Existing semiconductor packaging structures face challenges with CLIP interference and instability during mounting, particularly when multiple chips are stacked vertically, leading to potential tilting and increased risk of short circuits due to complex circuit layouts.
A semiconductor packaging unit with a CLIP structure comprising a small and large CLIP part, where the large CLIP part is designed with a width and length greater than two-thirds of the chip, and a specific bridge deck height configuration to enhance stability and heat dissipation, while allowing for flexible layout and reduced tilting.
The solution provides enhanced stability during mounting, reduces the risk of short circuits, and improves heat dissipation, while maintaining a compact and flexible layout, making the CLIP structure more robust and cost-effective.
Smart Images
Figure CN222146205U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductors, in particular to an ultra-fast recovery IGBT packaging structure and an IGBT device. Background Art
[0002] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar junction transistor (BJT) and an insulated gate field effect transistor (MOS). It has the advantages of high input impedance of a metal-oxide-semiconductor field-effect transistor (MOSFET) and low on-state voltage drop of a power transistor (Giant Transistor, GTR). GTR has a low saturation voltage drop and a large current density, but a large drive current; MOSFET has a very small drive power and a fast switching speed, but a large on-state voltage drop and a small current density. IGBT combines the advantages of the above two devices, with low drive power and low saturation voltage drop. It is very suitable for use in converter systems with a DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, and other fields.
[0003] When semiconductor packaging such as IGBT modules, multiple chips are often packaged on a conductive circuit board, and between the chip and the conductive circuit board, for example, the IGBT module includes an IGBT chip and an FRD diode chip, and the IGBT power module generally welds the IGBT chip and the diode chip on a heat dissipation substrate with a circuit, and then electrically connects the chip electrodes and the corresponding conductive structures on the circuit through a bridge such as a bonding wire or CLIP. In order to increase the stability of welding and the heat dissipation of the semiconductor packaging structure, the latest technology uses CLIP as a conductive member. However, when the circuit in the semiconductor packaging structure is more complicated, it is difficult for CLIP to achieve a flexible layout. At this time, the existing technicians think of stacking two CLIPs in a vertical direction so that the upper CLIP crosses the lower CLIP. However, this structure is easy to interfere with the lower CLIP due to the tilt of the upper CLIP during the mounting and welding of the semiconductor packaging structure, affecting the function of the semiconductor packaging structure. In addition, the CLIP part located on the upper side is often made too long, and when mounting, it is easy to lose money during the transfer process when the CLIP part is transferred.
[0004] Therefore, there is an urgent need for a semiconductor packaging unit, an IGBT packaging structure and an IGBT device that can solve the above problems. Utility Model Content
[0005] The utility model aims to provide a semiconductor packaging unit, an IGBT packaging structure and an IGBT device, which can be used to set up a stacking structure of two CLIP parts in a vertical direction, saving space, and the CLIP parts have high mounting stability and good heat dissipation.
[0006] In order to achieve the above-mentioned purpose, the utility model provides a semiconductor packaging unit, comprising a conductive sheet, a first chip and a second chip welded on the conductive sheet, and a CLIP part, wherein the CLIP part comprises a small CLIP part and a large CLIP part, wherein the small CLIP part is welded between the first chip and the conductive sheet, wherein the width of the large CLIP part is greater than or equal to two-thirds of the width of the second chip in the corresponding direction, and the large CLIP part comprises a front welding sheet, a middle welding sheet, and a rear welding sheet arranged in sequence along the front-to-back direction, and a front connecting bridge connecting the front welding sheet and the middle welding sheet, and a rear connecting bridge connecting the middle welding sheet and the rear welding sheet, wherein the rear welding sheet is welded on the second chip and the length of the rear welding sheet is greater than or equal to two-thirds of the length of the second chip in the corresponding direction, wherein the front welding sheet and the middle welding sheet are respectively welded on the conductive sheet and are located on both sides of the small CLIP part, and wherein the front connecting bridge spans over the small CLIP part and has a spacing with the small CLIP part, and the bridge deck height of the front connecting bridge is higher than that of the rear connecting bridge.
[0007] Preferably, the small CLIP component includes a first welding sheet welded on the first chip, a second welding sheet welded on the conductive sheet, and a first connecting bridge connecting the first welding sheet and the second welding sheet, and the bridge surface height of the first connecting bridge is higher than the first welding sheet and the second welding sheet and lower than the bridge surface of the front connecting bridge. This solution makes the small CLIP component stable during mounting and not prone to tilting.
[0008] Specifically, the bridge deck height of the first connecting bridge is equal to the bridge deck height of the rear connecting bridge.
[0009] Specifically, the width of the small CLIP component is greater than or equal to two-thirds of the corresponding width of the first chip, and the length of the first welding piece is greater than two-thirds of the corresponding length of the first chip, thereby increasing the heat dissipation capacity of the small CLIP component and further increasing the stability of mounting the small CLIP component.
[0010] Preferably, the center of gravity of the large CLIP component is located at a corresponding position of the front connecting bridge, which not only makes the mounting of the large CLIP component more stable, but also makes it less likely for the robot to drop the large CLIP component when the robot absorbs and transfers the large CLIP component during mounting.
[0011] Preferably, the conductive sheet includes a first conductive sheet, a second conductive sheet, a third conductive sheet and a fourth conductive sheet, the first conductive sheet and the fourth conductive sheet are located at the front and rear sides of the second conductive sheet and the third conductive sheet, the first electrode of the first chip is welded to the third conductive sheet, the first electrode of the second chip is welded to the fourth conductive sheet, the small CLIP piece is welded between the second conductive sheet and the second electrode of the first chip, the front welding sheet is welded to the first conductive sheet, the middle welding sheet is welded to the third conductive sheet and the welding area is adjacent to the fourth conductive sheet relative to the first chip, and the layout is compact and flexible.
[0012] Specifically, the first conductive sheet, the second conductive sheet, the third conductive sheet and the fourth conductive sheet are sequentially arranged in the front-to-back direction for easy wiring. Of course, the positions of the second conductive sheet and the third conductive sheet can be interchanged or arranged in the left-right direction.
[0013] Specifically, the small CLIP component includes a first welding plate welded to the first chip, a second welding plate welded to the second conductive plate, and a first connecting bridge connecting the first welding plate and the second welding plate, wherein a bridge surface of the first connecting bridge is higher than the first welding plate and the second welding plate and lower than a bridge surface of the front connecting bridge; a width of the small CLIP component is greater than or equal to two-thirds of a corresponding width of the first chip, and a length of the first welding plate is greater than two-thirds of a corresponding length of the first chip.
[0014] The utility model also discloses an IGBT packaging structure, comprising a heat sink, an IGBT main unit and a quick recovery unit formed on the heat sink, the IGBT main unit comprising an IGBT chip, a freewheeling diode, a main conductive sheet electrically connected to the IGBT chip and the freewheeling diode, and a main CLIP structure, the quick recovery unit is the semiconductor packaging unit as described above, the first chip and the second chip are diode chips, and the main CLIP structure electrically connects the E pole of the IGBT chip to the first conductive sheet welded to the front welding sheet.
[0015] Preferably, the main conductive sheet includes a first main conductive sheet and a second main conductive sheet, the main CLIP structure includes a first main CLIP and a second main CLIP, the C pole of the IGBT chip and the negative pole of the freewheeling diode are welded to the first main conductive sheet, the first main CLIP electrically connects the E pole of the IGBT chip, the positive pole of the freewheeling diode and the first conductive sheet together, and the second main CLIP welds the G pole of the IGBT chip and the second main conductive sheet together.
[0016] Specifically, the IGBT main unit is located at the front side of the fast recovery unit, and the second main conductive sheet and the first main conductive sheet are arranged along the front-to-back direction.
[0017] Preferably, there are a plurality of the IGBT main units and a plurality of the fast recovery units, and the plurality of the IGBT main units are arranged at intervals along the left-right direction, and the plurality of the fast recovery units are arranged at intervals along the left-right direction.
[0018] The utility model also provides an IGBT device, comprising the above-mentioned IGBT packaging structure, power terminals and signal terminals electrically connected to the IGBT packaging structure, and a housing for mounting the IGBT packaging structure, the power terminals and the signal terminals.
[0019] Compared with the prior art, the large CLIP and small CLIP of the utility model adopt a structure stacked in the vertical direction to electrically connect the chip and the circuit board, saving space and increasing the flexibility of space layout. On the other hand, the welding part of the large CLIP piece of the utility model welded on the chip or the conductive sheet is in the form of a sheet, and the width of the entire large CLIP piece is greater than or equal to two-thirds of the width of the chip, which not only improves the full level of grasping during transfer, but also effectively increases the stability of the large CLIP piece during mounting, prevents the large CLIP piece from tilting and adhering to the small CLIP during mounting to cause a short circuit, and the heat dissipation performance of the large CLIP piece is better, and the material of the CLIP piece can be thinner and low in cost. On the other hand, in the large CLIP piece of the utility model, the bridge deck height of the front connecting bridge is higher than that of the rear connecting bridge, and it spans over the small CLIP piece, which also makes the mounting of the large CLIP piece stable. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a three-dimensional diagram of the IGBT device of the utility model.
[0021] Figure 2 It is a three-dimensional diagram of the IGBT device of the utility model with the shell removed.
[0022] Figure 3 It is an exploded view of the IGBT device of the utility model.
[0023] Figure 4 It is a three-dimensional diagram of the IGBT packaging structure of the utility model.
[0024] Figure 5 yes Figure 4 Enlarged view of part a.
[0025] Figure 6 yes Figure 4 Enlarged view of part b.
[0026] Figure 7 It is a top view of the IGBT packaging structure of the utility model.
[0027] Figure 8 It is an exploded view of the IGBT packaging structure of the utility model.
[0028] Fig. 9 This utility model Figure 8 A partial enlarged view of .
[0029] Fig.10 It is a side view of the IGBT packaging structure of the utility model.
[0030] Fig.11 yes Fig.10 Enlarged view of part c. DETAILED DESCRIPTION
[0031] In order to explain the technical content, structural features, achieved objectives and effects of the present invention in detail, the following is a detailed description in conjunction with the implementation modes and the accompanying drawings.
[0032] refer to Figures 1 to 3 The utility model discloses an IGBT device 1, comprising the above-mentioned IGBT packaging structure 4, a power terminal 2 and a signal terminal 3 electrically connected to the IGBT packaging structure 4, and a housing 5 for mounting the IGBT packaging structure 4, the power terminal 2, and the signal terminal 3.
[0033] refer to Figure 3 and Figure 4 The IGBT package structure 4 includes a heat sink 10, an IGBT main unit 401 formed on the heat sink 10, and a fast recovery unit 402. The IGBT main unit 401 includes an IGBT chip 51, a freewheeling diode 52, a conductive sheet electrically connected to the IGBT chip 51 and the freewheeling diode 52, and a CLIP structure, and the fast recovery unit 402 includes the first diode 53, the second diode 54, a conductive sheet electrically connected to the first diode 53 and the second diode 54, and a CLP structure. In this embodiment, the IGBT main unit 401 is located at the front side of the fast recovery unit 402.
[0034] refer to Figures 4 to 8 The conductive sheet includes a first conductive sheet 24, a second conductive sheet 25, a third conductive sheet 22, a fourth conductive sheet 23, a first main conductive sheet 21 and a second main conductive sheet 26, and the CLP structure includes a first main CLIP component 31, a second main CLIP component 34, a large CLIP component 33 and a small CLIP component 32.
[0035] In this embodiment, the second main conductive sheet 26 , the first main conductive sheet 21 , the first conductive sheet 24 , the second conductive sheet 25 , the third conductive sheet 22 and the fourth conductive sheet 23 are sequentially arranged along the front-to-back direction.
[0036] refer to Figure 5The C pole of the IGBT chip 51 and the negative pole of the freewheeling diode 52 are welded to the first main conductive sheet 21, the first main CLIP component 31 is welded to the E pole of the IGBT chip 51, the positive pole of the freewheeling diode 52 and the first conductive sheet 24 respectively, and the second main CLIP component 34 is welded to the G pole of the IGBT chip 51 and the second main conductive sheet 26 respectively.
[0037] refer to Figure 5 The first main CLIP component 31 is a three-point welded CLIP component, including an E-pole welding piece 311 welded to the E-pole of the IGBT chip 51, a first welding piece 312 welded to the freewheeling diode chip 52, a second welding piece 313 welded to the first main conductive piece 21, a first main connecting bridge 314 connected between the E-pole welding piece 311 and the first welding piece 312, and a second main connecting bridge 315 connected between the first welding piece 312 and the second welding piece 313, wherein the bridge surfaces of the first main connecting bridge 314 and the second main connecting bridge 315 are higher than the E-pole welding piece 311, the first welding piece 312 and the second welding piece 313. The E-pole welding piece 311 and the first welding piece 312 are provided with one or more fixing holes 3111.
[0038] refer to Figure 5 The front end of the fourth set of electrical connectors 34 is welded to the second main conductive sheet 26, and the rear end extends laterally to form two rear soldering feet which are respectively welded to the G poles of the two IGBT chips 51, wherein the connecting bridge connecting the front end and the two rear soldering feet is T-shaped.
[0039] refer to Figure 6 , Fig. 9 and Fig.11The small CLIP component 32 is welded between the first diode 53 and the second conductive sheet 24. The width of the large CLIP component 33 is greater than or equal to two-thirds of the width of the second diode 54 in the corresponding direction, and includes a front welding sheet 331, a middle welding sheet 332, and a rear welding sheet 333 arranged in sequence along the front-to-back direction, and a front connecting bridge 334 connecting the front welding sheet 331 and the middle welding sheet 332, and a rear connecting bridge 335 connecting the middle welding sheet 332 and the rear welding sheet 333. The rear welding sheet 333 is welded on the second diode 54 and the length of the rear welding sheet 333 is greater than or equal to two-thirds of the length of the second diode 54 in the corresponding direction. The front welding sheet 331 and the middle welding sheet 332 are respectively welded on the conductive sheet and are located on both sides of the small CLIP component 32, and the front connecting bridge 334 spans over the small CLIP component 32 and has a spacing with the small CLIP component 32. The bridge surface height of the front connecting bridge 334 is higher than that of the rear connecting bridge 335. The middle welding piece 332 is welded on the third conductive piece 22 and the welding area is adjacent to the fourth conductive piece 23 relative to the first diode 53.
[0040] refer to Figure 6 , Fig. 9 and Fig.11 The small CLIP part 32 includes a first welding piece 322 welded on the first diode 53, a second welding piece 321 welded on the second conductive piece 25, and a first connecting bridge 323 connecting the first welding piece 322 and the second welding piece 321. The bridge surface height of the first connecting bridge 323 is higher than the first welding piece 322 and the second welding piece 321 and lower than the bridge surface of the front connecting bridge 334. The bridge surface height of the first connecting bridge 323 is equal to the bridge surface height of the rear connecting bridge 335.
[0041] Specifically, the width of the small CLIP component 32 is greater than or equal to two-thirds of the corresponding width of the first diode 53, and the length of the first welding piece 322 is greater than two-thirds of the corresponding length of the first diode 53, thereby increasing the heat dissipation capacity of the small CLIP component 32 and further increasing the mounting stability of the small CLIP component 32.
[0042] The center of gravity of the large CLIP component 33 is located at the corresponding position of the front connecting bridge 334, which not only makes the mounting of the large CLIP component 33 more stable, but also makes it difficult for the robot to transfer the large CLIP component 33 when the large CLIP is mounted.
[0043] refer to Figure 6 , Fig. 9 and Fig.11The first conductive sheet 24 and the fourth conductive sheet 23 are located at the front and rear sides of the second conductive sheet 25 and the third conductive sheet 22. The first electrode of the first diode 53 is welded to the third conductive sheet 22, the first electrode of the second diode 54 is welded to the fourth conductive sheet 23, the small CLIP piece 32 is welded between the second conductive sheet 25 and the second electrode of the first diode 53, and the front welding sheet 331 is welded to the first conductive sheet 24. The layout is compact and flexible.
[0044] There are a plurality of IGBT main units 401 and a plurality of fast recovery units 402 , and the plurality of IGBT main units 401 are arranged at intervals along the left-right direction, and the plurality of fast recovery units 402 are arranged at intervals along the left-right direction.
[0045] In this embodiment, the first main CLIP component 31 , the second main CLIP component 34 , the large CLIP component 33 and the small CLIP component 32 are all arranged along the front-to-back direction.
[0046] Test Figures 7 to 9 Three groups of terminal welding areas 211, 251, and 231 electrically connected to the power terminals are respectively formed on the first main conductive sheet 21, the second conductive sheet 25, and the fourth conductive sheet 23, and the fourth conductive sheet 23 protrudes toward the third conductive sheet 22 with a plurality of protruding arms 232, and the third conductive sheet 22 is formed with grooves 221 that are concave-convex and matched with the protruding arms 232 and have a spacing, so that the fourth conductive sheet 23 and the third conductive sheet 22 have a staggered structure, and the terminal welding area 231 on the fourth conductive sheet 23 corresponds one-to-one to the protruding arms 232 and is formed on the protruding arms 232.
[0047] In this embodiment, the heat sink 10 is a ceramic plate, but it can also be made of other materials. The conductive sheet and the electrical connector are copper, which has good conductivity and heat dissipation efficiency. Of course, it is not limited to this, and heat sinks, conductive sheets and electrical connectors made of other materials can also be used.
[0048] The front, rear, left and right in the present invention are relative position relationships, rather than absolute position relationships.
[0049] The above disclosure is only the preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.
Claims
1. A semiconductor packaging unit, comprising a conductive sheet, a first chip and a second chip soldered on the conductive sheet, and a CLIP part, characterized in that: The CLIP component includes a small CLIP component and a large CLIP component. The small CLIP component is welded between the first chip and the conductive sheet. The width of the large CLIP component is greater than or equal to two-thirds of the width of the second chip in the corresponding direction. The large CLIP component includes a front welding sheet, a middle welding sheet, and a rear welding sheet arranged in sequence along the front-to-back direction, and a front connecting bridge connecting the front welding sheet and the middle welding sheet, and a rear connecting bridge connecting the middle welding sheet and the rear welding sheet. The rear welding sheet is welded on the second chip and the length of the rear welding sheet is greater than or equal to two-thirds of the length of the second chip in the corresponding direction. The front welding sheet and the middle welding sheet are respectively welded on the conductive sheet and are located on both sides of the small CLIP component, and the front connecting bridge spans over the small CLIP component and has a spacing between the small CLIP component. The bridge deck height of the front connecting bridge is higher than that of the rear connecting bridge.
2. The semiconductor package unit according to claim 1, wherein: The small CLIP component includes a first welding plate welded on the first chip, a second welding plate welded on the conductive plate, and a first connecting bridge connecting the first welding plate and the second welding plate, wherein the bridge deck height of the first connecting bridge is higher than the first welding plate and the second welding plate and lower than the bridge deck of the front connecting bridge.
3. The semiconductor package unit according to claim 2, wherein: The width of the small CLIP piece is greater than or equal to two-thirds of the corresponding width of the first chip, and the length of the first welding sheet is greater than two-thirds of the corresponding length of the first chip.
4. The semiconductor package unit according to claim 1, wherein: The center of gravity of the large CLIP part is located at a corresponding position of the front connecting bridge.
5. The semiconductor package unit according to claim 1, wherein: The conductive sheet comprises a first conductive sheet, a second conductive sheet, a third conductive sheet and a fourth conductive sheet, wherein the first conductive sheet and the fourth conductive sheet are located at the front and rear sides of the second conductive sheet and the third conductive sheet, the first electrode of the first chip is welded to the third conductive sheet, the first electrode of the second chip is welded to the fourth conductive sheet, the small CLIP piece is welded between the second conductive sheet and the second electrode of the first chip, the front welding sheet is welded to the first conductive sheet, the middle welding sheet is welded to the third conductive sheet and the welding area is adjacent to the fourth conductive sheet relative to the first chip.
6. The semiconductor package unit according to claim 5, wherein: The first conductive sheet, the second conductive sheet, the third conductive sheet and the fourth conductive sheet are sequentially arranged along the front-to-back direction.
7. An IGBT packaging structure, characterized in that: It includes a heat sink, an IGBT main unit formed on the heat sink, and a fast recovery unit, the IGBT main unit includes an IGBT chip, a freewheeling diode, a main conductive sheet electrically connected to the IGBT chip and the freewheeling diode, and a main CLIP structure, the fast recovery unit is a semiconductor packaging unit according to any one of claims 1 to 6, the first chip and the second chip are diode chips, and the main CLIP structure electrically connects the E pole of the IGBT chip to the first conductive sheet welded to the front welding sheet.
8. The IGBT packaging structure according to claim 7, characterized in that: The main conductive sheet includes a first main conductive sheet and a second main conductive sheet, the main CLIP structure includes a first main CLIP and a second main CLIP, the C pole of the IGBT chip and the negative pole of the freewheeling diode are welded to the first main conductive sheet, the first main CLIP electrically connects the E pole of the IGBT chip, the positive pole of the freewheeling diode and the first conductive sheet together, and the second main CLIP welds the G pole of the IGBT chip and the second main conductive sheet together.
9. The IGBT packaging structure according to claim 8, characterized in that: The IGBT main unit is located at the front side of the fast recovery unit, and the second main conductive plate and the first main conductive plate are arranged along the front-to-back direction.
10. An IGBT device, characterized in that: It comprises the IGBT packaging structure as claimed in any one of claims 7, a power terminal and a signal terminal electrically connected to the IGBT packaging structure, and a shell for mounting the IGBT packaging structure, the power terminal and the signal terminal.