Display device

Abstract

A display device is provided. The display device includes: a first substrate; a circuit layer disposed on the first substrate; a light-emitting element layer disposed on the circuit layer; and an encapsulation structure disposed on the light-emitting element layer, the encapsulation structure including a scattering layer, a first inorganic film disposed on the scattering layer, an organic film disposed on the first inorganic film, and a second organic film disposed on the organic film, the scattering layer including a plurality of recesses and protrusions.

Description

Technical Field

[0001] The utility model relates to a display device. Background Art

[0002] With the development of multimedia, the importance of display devices is increasing. In response to this, various display devices such as liquid crystal display devices (LCD) and organic light emitting diode display devices (OLED) are being developed.

[0003] In the display device, the self-luminous display device includes a self-luminous element. The self-luminous element may include two opposing electrodes and a light-emitting layer therebetween. In the case where the self-luminous element is an organic light-emitting element, electrons and holes provided from the two electrodes recombine in the light-emitting layer to generate excitons, and the generated excitons change from an excited state to a ground state, thereby emitting light. Such an organic light-emitting element is easily affected by oxygen and moisture, and therefore may include an encapsulation structure to prevent the penetration of oxygen and moisture.

[0004] On the other hand, the display device may include a color conversion element that receives light from an organic light emitting element or the like to realize color. For example, the color conversion element may receive blue light from the organic light emitting element to emit blue, green, and red light respectively, thereby recognizing images with various colors. The color conversion element may be configured in the display device in the form of a separate substrate or may be directly formed integrally with an element in the display device. Utility Model Content

[0005] The problem to be solved by the present invention is to provide a display device, in which a scattering layer that functions as a guide film is formed in a packaging structure to increase the guided light reaching a color conversion element, thereby improving light efficiency.

[0006] Another problem to be solved by the present invention is to provide a display device, in which a scattering layer that functions as an external light anti-reflection film is formed in a packaging structure to reflect external light, thereby preventing a user from recognizing the external light.

[0007] Another problem to be solved by the present invention is to provide a method for manufacturing a display device having a thin sealing structure and excellent sealing function.

[0008] The subject of the present invention is not limited to the above-mentioned subject. Through the following description, those skilled in the art should be able to understand other technical subjects not mentioned.

[0009] A display device for solving the above-mentioned problem comprises: a first substrate; a circuit layer arranged on the first substrate; a light-emitting element layer arranged on the circuit layer; and a packaging structure arranged on the light-emitting element layer, comprising a scattering layer, a first inorganic film arranged on the scattering layer, an organic film arranged on the first inorganic film, and a second organic film arranged on the organic film, wherein the scattering layer comprises a plurality of concave-convex portions.

[0010] The plurality of concavo-convex portions may include first particles and second particles, and concavo-convex portions adjacent to each other among the plurality of concavo-convex portions may be in direct contact with each other.

[0011] The sizes of the plurality of concavo-convex portions may be the same as or different from each other.

[0012] The plurality of concavo-convex portions may be arranged at regular intervals or at irregular intervals.

[0013] The first particles may include any one of silicon oxide, silicon nitride and silicon oxynitride.

[0014] The second particles may include the same material as the first particles and further include silane (SiH 4 ), nitrous oxide (N 2 O) and ammonia (NH 3 )

[0015] The thickness of the scattering layer may be 0.3 to 0.75 times the thickness of the first inorganic film.

[0016] The thickness of the scattering layer may be 0.3 μm to 0.5 μm.

[0017] The plurality of concavo-convex portions may be hemispherical in shape.

[0018] The average radius of each of the plurality of concavo-convexities may be 0.15 μm to 0.25 μm.

[0019] It may be that the display device further includes: a second substrate, which is opposite to the first substrate and defines a first light-transmitting area, a second light-transmitting area and a third light-transmitting area; a first color filter, which is arranged on the second substrate and overlaps with the first light-transmitting area; a second color filter, which is arranged on the second substrate and overlaps with the second light-transmitting area; a third color filter, which is arranged on the second substrate and overlaps with the third light-transmitting area; a first wavelength conversion layer, which is arranged on the first color filter; a second wavelength conversion layer, which is arranged on the second color filter; and a light-transmitting layer, which is arranged on the third color filter, and the scattering layer is arranged between the first wavelength conversion layer, the second wavelength conversion layer and the light-transmitting layer and the light-emitting element layer.

[0020] The scattering layer may be in direct contact with the first inorganic film.

[0021] The scattering layer may be configured to reduce reflectivity of external light incident through the display surface.

[0022] A method for manufacturing a display device according to an embodiment for solving the above-mentioned problem comprises the steps of forming a first substrate, forming a circuit layer on the first substrate, and forming a light-emitting element layer on the circuit layer; forming a scattering layer on the light-emitting element layer; and forming a first inorganic film on the scattering layer, wherein in the step of forming the scattering layer, the injection of the reaction gas is terminated simultaneously with or after the application of the discharge power source and the injection of the discharge gas are terminated.

[0023] It may be that, in the step of forming the scattering layer, the injection of the reaction gas is started simultaneously with or before the application of the discharge power source and the injection of the discharge gas are started.

[0024] It may be that, in the step of forming the first inorganic film, the application of the discharge power supply and the injection of the discharge gas are started after a constant time has passed after the injection of the reaction gas is started, and the application of the discharge power supply and the injection of the discharge gas are ended after a constant time has passed after the injection of the reaction gas is ended.

[0025] It may be that the manufacturing method of the display device also includes: a step of forming an organic film on the first inorganic film; and a step of forming a second inorganic film on the organic film, in the step of forming the second inorganic film, after a constant time has passed after the start of the injection of the reaction gas, the application of the discharge power and the injection of the discharge gas are started, and after a constant time has passed after the end of the injection of the reaction gas, the application of the discharge power and the injection of the discharge gas are terminated.

[0026] The scattering layer may include a plurality of concavo-convex portions.

[0027] The plurality of concavo-convexities may include: first particles including the same substance as that of the first inorganic film; and second particles including a substance different from that of the first particles.

[0028] The first particles may include any one of silicon oxide, silicon nitride and silicon oxynitride.

[0029] The second particles may include the same material as the first particles and further include silane (SiH 4 ), nitrous oxide (N 2 O) and ammonia (NH 3 )

[0030] Other embodiments for solving the above-mentioned problem involve a method for manufacturing a display device, comprising: forming a first substrate, forming a circuit layer on the first substrate, and forming a light-emitting element layer on the circuit layer; and forming a first inorganic film on the light-emitting element layer, wherein in the step of forming the first inorganic film, after a constant time has passed since the start of the injection of the reaction gas, the injection of the reaction gas is terminated, and at the same time or after the termination of the injection of the reaction gas, the application of a discharge power supply and the injection of a discharge gas are started.

[0031] After a constant time has passed after the application of the discharge power and the injection of the discharge gas are started, the application of the discharge power and the injection of the discharge gas are terminated.

[0032] (Effect of utility model)

[0033] According to the display device of the present invention, a guide film is formed in the packaging structure to increase the guided light reaching the color conversion element, thereby improving the light efficiency.

[0034] According to the display device of the present invention, a scattering layer that functions as an external light anti-reflection film is formed in the packaging structure to reflect external light, thereby preventing the external light from being recognized by the user.

[0035] According to the manufacturing method of the display device involved in other embodiments of the present invention, a packaging structure with a thin thickness and excellent packaging function can be formed.

[0036] The effects of the embodiments are not limited to the above-exemplified ones, and more effects are included in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a three-dimensional diagram of a display device according to an embodiment.

[0038] Figure 2 It is along Figure 1 A schematic cross-sectional view of the display device taken along line X1-X1′.

[0039] Figure 3 It is a plan view of a display device involved in one embodiment.

[0040] Figure 4 It is a schematic configuration diagram showing wiring of a display device according to an embodiment.

[0041] Figure 5 is an equivalent circuit diagram of a pixel of a display device according to an embodiment.

[0042] Figure 6It is a plan view schematically showing a display area of ​​a display substrate in a display device according to an embodiment.

[0043] Figure 7 It is a plan view schematically showing a display area of ​​a color conversion substrate in a display device according to an embodiment.

[0044] Figure 8 It is along Figure 6 and Figure 7 A cross-sectional view of the display device taken along line X2-X2′.

[0045] Fig. 9 It is magnified Figure 8 Magnified view of section "A".

[0046] Fig.10 It is a cross-sectional view showing a state where light is scattered by a scattering layer according to an embodiment.

[0047] Fig.11 It is a flowchart showing a method for manufacturing a display device according to an embodiment.

[0048] Fig.12 It is a sequence diagram showing step S120 according to one embodiment.

[0049] Fig.13 It is a sequence diagram showing step S130 according to one embodiment.

[0050] Fig.14 It is a conceptual diagram for explaining step S120 and step S130 involved in one embodiment.

[0051] Fig.15 It is a schematic cross-sectional view for explaining step S120 according to one embodiment.

[0052] Fig.16 It is a schematic cross-sectional view for explaining step S120 according to one embodiment.

[0053] Fig.17 It is a schematic cross-sectional view for explaining step S130 according to an embodiment.

[0054] Fig.18 It is a sequence diagram showing step S120_1 which is a modified example of step S120 according to another embodiment.

[0055] Fig.19 It is a conceptual diagram for explaining step S120_1 and step S130 involved in other embodiments.

[0056] Fig. 20 1 is a sequence diagram showing step S120_2 which is a variation of step S120 according to still another embodiment.

[0057] Fig.21 It is a conceptual diagram for explaining step S120_2 and step S130 involved in still another embodiment.

[0058] Fig. 22 1 is a sequence diagram showing step S120_3 which is a variation of step S120 according to still another embodiment.

[0059] Fig.23 It is a conceptual diagram for explaining step S120_3 and step S130 involved in still another embodiment.

[0060] Fig.24 It is a flowchart showing a method for manufacturing a display device according to another embodiment.

[0061] Fig.25 It is a sequence diagram showing step S220 involved in one embodiment.

[0062] Fig.26 It is a conceptual diagram for explaining step S220 involved in one embodiment.

[0063] Fig. 27 This is a conceptual diagram for explaining step S220_1 which is a variation of step S220 according to another embodiment.

[0064] Fig.28 is a cross-sectional view showing an example of a display device manufactured according to a method for manufacturing a display device according to another embodiment, taken along Figure 6 and Figure 7 A cross-sectional view of the display device taken along line X2-X2′.

[0065] Explanation of symbols:

[0066] 1: display device; 100: display substrate; 200: color conversion substrate; 300: filling material; 400: sealing part; 110: first substrate; CCL: circuit layer; EML: light emitting element layer; PXE: pixel electrode; PDL: pixel definition film; LEL: light emitting layer; CME: common electrode; 170: packaging structure; SCT: scattering layer; CCV: concave-convex; AGL: (agglomerated) scattering particles; 171: first inorganic film; PLM: polymer; 172: organic film; 173: second inorganic film; 210: second substrate; BML: light shielding member; CFL: color filter layer; CFL1: first color filter layer; CFL2: second color filter layer; CFL3: third color filter layer; 220: first cover layer; PTL: partition wall; WCL: wavelength conversion layer; TPL: light-transmitting layer; WCL1: first wavelength conversion pattern; WCL2: second wavelength conversion pattern; BRS1: first base resin; BRS2: second base resin; BRS3: third base resin; 230: second cover layer; RG: reaction gas; RG1: first reaction gas; RG2: second reaction gas; CG: discharge gas; DPS: deposition device; PLS: plasma; RDC1: first free radical; RDC2: second free radical; FRG: fragmentation precursor. DETAILED DESCRIPTION

[0067] References and Attachments Figure 1 The advantages, features and methods of achieving the advantages and features of the present invention will become clear from the detailed embodiments described below. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various different forms. The embodiments are only provided to make the disclosure of the present invention complete and to fully inform the technical personnel of the field of the present invention. The present invention should be defined only by the scope of the claims.

[0068] The case where an element or layer is located on other elements or layers includes not only the case where it is directly located on other elements, but also the case where other layers or other elements are present therebetween. Similarly, the cases referred to as "below", "left" and "right" include both the case where it is directly adjacent to other elements and the case where other layers or other elements are sandwiched therebetween. Throughout the specification, the same symbol refers to the same constituent element.

[0069] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0070] Figure 1 is a three-dimensional diagram of a display device according to an embodiment. Figure 2 It is along Figure 1 A schematic cross-sectional view of the display device taken along line X1-X1′.

[0071] Reference Figure 1 and Figure 2 The display device 1 can be applied to various electronic devices such as tablet PCs, smart phones, car navigation units, cameras, center information displays (CID) provided in cars, watch-type electronic devices, PDAs (Personal Digital Assistants), PMPs (Portable Multimedia Players), game consoles, small and medium-sized electronic devices, such as televisions, external advertising boards, monitors, personal computers, notebook computers, etc. These are only provided as embodiments, and can also be used in other electronic devices without exceeding the concept of the present invention.

[0072] In one embodiment, the display device 1 may be formed in a rectangular shape on a plane. The display device 1 may include two long sides extending in a first direction DR1 and two short sides extending in a second direction DR2 intersecting the first direction DR1. The corner where the long side and the short side of the display device 1 meet may be a right angle, but is not limited thereto, and a curved surface may also be formed. In other embodiments, the long side may extend in the second direction DR2 and the short side may extend in the first direction DR1. The planar shape of the display device 1 is not limited to the example, and a circle or other different shapes may also be applicable.

[0073] In the drawings, the first direction DR1 and the second direction DR2 are horizontal directions, respectively, and intersect each other. For example, the first direction DR1 and the second direction DR2 may be orthogonal to each other. In addition, the third direction DR3 may intersect with respect to the first direction DR1 and the second direction DR2, for example, it may be a vertical direction orthogonal to the first direction DR1 and the second direction DR2. Unless otherwise defined, in this specification, the direction indicated by the arrow from the first direction DR1 to the third direction DR3 may be referred to as one side, and the opposite direction to the direction indicated by the arrow from the first direction DR1 to the third direction DR3 may be referred to as the other side. In addition, in this specification, "upper", "upper side", "upper part", "top", "upper surface" refer to the direction to which the arrow in the drawing in the third direction DR3 points, with reference to the drawings, and "lower", "lower side", "lower part", "bottom", "lower surface" refer to the opposite direction to which the arrow in the drawing in the third direction DR3 points, with reference to the drawings.

[0074] The display device 1 may include a display area DA for displaying an image and a non-display area NDA for not displaying an image. In an embodiment, the non-display area NDA may be located around the display area DA and may surround the display area DA.

[0075] The schematic stacking structure of the display device 1 is described as follows, that is, in one embodiment, the display device 1 may include a display substrate 100 and a color conversion substrate 200 opposite to the display substrate 100, and may also include a sealing portion 400 combining the display substrate 100 and the color conversion substrate 200 and a filling material 300 filled between the display substrate 100 and the color conversion substrate 200.

[0076] The display substrate 100 may include elements for displaying images, circuits (e.g., pixel circuits such as switching elements, etc.), pixel definition films that define the luminous areas and non-luminous areas described later in the display area DA, and self-light emitting elements. In one embodiment, the self-light emitting element may include at least one of an organic light emitting element, a quantum dot light emitting element, an inorganic-based micro-light emitting diode (e.g., Micro LED), and an inorganic-based nano-light emitting diode (e.g., nano LED). In the following, for ease of explanation, the case where the self-light emitting element is an organic light emitting element is taken as an example for explanation.

[0077] The color conversion substrate 200 may be located on the display substrate 100 and opposite to the display substrate 100. In one embodiment, the color conversion substrate 200 may include a color conversion pattern that converts the color of incident light. In one embodiment, the color conversion pattern may include any one of a color filter and a wavelength conversion pattern.

[0078] In the non-display area NDA, the sealing part 400 may be located between the display substrate 100 and the color conversion substrate 200. The sealing part 400 may be arranged along the edge position of the display substrate 100 and the color conversion substrate 200 in the non-display area NDA, so that the sealing part 400 may surround the display area DA on a plane. The display substrate 100 and the color conversion substrate 200 may be combined with each other via the sealing part 400.

[0079] In one embodiment, the sealing part 400 may be formed of an organic substance, for example, an epoxy resin, but is not limited thereto.

[0080] A filling material 300 may be disposed in a space between the display substrate 100 and the color conversion substrate 200 surrounded by the sealing portion 400. The filling material 300 may fill a space between the display substrate 100 and the color conversion substrate 200.

[0081] In one embodiment, the filling material 300 may be formed of a material that allows light to pass through. In one embodiment, the filling material 300 may be formed of an organic substance. For example, the filling material 300 may be formed of a silicon-based organic substance, an epoxy-based organic substance, etc., but is not limited thereto. In other embodiments, the filling material 300 may also be omitted.

[0082] Figure 3 It is a plan view of a display device involved in one embodiment.

[0083] The display device 1 according to an embodiment may include a display area DA and a non-display area NDA. The display area DA may be an active area for realizing the display of an image. The display area DA may have a rectangular shape in a plan view similar to the overall shape of the display device 1, but is not limited thereto.

[0084] The display area DA may include a plurality of pixels PX (refer to Figure 5 ). A plurality of pixels PX may be arranged in row and column directions. The shape of each pixel PX may be a rectangle or a square in a plan view, but is not limited thereto, and may also be a rhombus shape with each side tilted relative to a side direction of the display device 1. The plurality of pixels PX may include pixels PX of various colors. For example, the plurality of pixels PX may include a first color pixel of red, a second color pixel of green, and a third color pixel of blue, but is not limited thereto. The color pixels PX may be arranged alternately in a stripe type or a Pentile type.

[0085] A non-display area NDA may be configured around the display area DA. The non-display area NDA may surround all or part of the display area DA. The display area DA may be rectangular in shape, and the non-display area NDA may be configured to be adjacent to four sides of the display area DA. The non-display area NDA may constitute a frame of the display device 1.

[0086] A driving circuit or a driving element for driving the display area DA may be disposed in the non-display area NDA. Figure 3 The first non-display area NDA1 arranged adjacent to the lower side of the second long side ( Figure 3 In the second non-display area NDA2 arranged adjacent to the upper side of the display device 1, a pad portion may be provided on the display substrate 100 of the display device 1, and an external device EXD may be mounted on the pad electrode of the pad portion. Examples of the external device EXD include a connection film, a printed circuit board, a driver chip DIC, a connector, a wiring connection film, etc. Figure 3 The driving chip DIC is shown in FIG. Figure 3The third non-display area NDA3 adjacent to the second short side (the left side of the display device 1) may be provided with a scanning driving unit SDR or the like directly formed on the display substrate 100 of the display device 1. Figure 3 A scanning driving unit SDR and the like may also be disposed in a fourth non-display area NDA4 disposed adjacent to the display area (on the right side of the image).

[0087] Figure 4 It is a schematic configuration diagram showing wiring of a display device according to an embodiment.

[0088] exist Figure 3 Further reference Figure 4 The display device 1 may include a plurality of wirings. The plurality of wirings may include a scan line SCL, a sensing signal line SSL, a data line DTL, a reference voltage line RVL, a first power line ELVDL, and the like.

[0089] The scan lines SCL and the sensing signal lines SSL may extend in the first direction DR1. The scan lines SCL and the sensing signal lines SSL may be connected to the scan driving part SDR. The scan driving part SDR may include a circuit layer CCL (refer to Figure 8 ) formed by the drive circuit. The scanning drive unit SDR can be arranged in the third non-display area NDA3, but is not limited to this, and can also be arranged in the fourth non-display area NDA4 or in both the third non-display area NDA3 and the fourth non-display area NDA4. The scanning drive unit SDR can be connected to the signal connection wiring CWL, and at least one end of the signal connection wiring CWL can form a wiring pad WPD on the first non-display area NDA1 and / or the second non-display area NDA2. In one embodiment, a wiring pad (hereinafter referred to as a “signal connection pad”) WPD_CW of the signal connection wiring CWL can be arranged in the pad area PDA of the first non-display area NDA1 and connected to the external device EXD, but is not limited to this.

[0090] The data line DTL and the reference voltage line RVL may extend in a second direction DR2 crossing the first direction DR1. The first power line ELVDL may include a portion extending in the second direction DR2. The first power line ELVDL may also include a portion extending in the first direction DR1. The first power line ELVDL may have a mesh structure, but is not limited thereto.

[0091] A wiring pad WPD may be configured at at least one end of the data line DTL, the reference voltage line RVL, and the first power line ELVDL. Each wiring pad WPD may be configured in a pad area PDA of the non-display area NDA. In one embodiment, the wiring pad (hereinafter referred to as "data pad") WPD_DT of the data line DTL may be configured in the pad area PDA of the first non-display area NDA1, and the wiring pad (hereinafter referred to as "reference voltage pad") WPD_RV of the reference voltage line RVL and the wiring pad (hereinafter referred to as "first power pad") WPD_ELVD of the first power line ELVDL may be configured in the pad area PDA of the second non-display area NDA2. As another example, the data pad WPD_DT, the reference voltage pad WPD_RV, and the first power pad WPD_ELVD may also be configured in the same area (for example, the first non-display area NDA1). As described above, an external device EXD may be installed on the wiring pad WPD. The external device EXD may be mounted on the wiring pad WPD through an anisotropic conductive film, ultrasonic bonding, or the like.

[0092] Figure 5 is an equivalent circuit diagram of a pixel of a display device according to an embodiment.

[0093] Reference Figure 5 , each pixel PX may include a pixel driving circuit. The above-mentioned wiring may pass through each pixel PX or its surroundings while applying a driving signal to each pixel driving circuit. The pixel driving circuit may include transistors and capacitors. The number of transistors and capacitors of each pixel driving circuit may be deformed in various ways. Below, the pixel driving circuit is described by taking a 3T1C structure in which a pixel driving circuit includes three transistors and one capacitor as an example, but it is not limited to this, and various other deformed pixel PX structures such as a 2T1C structure, a 7T1C structure, and a 6T1C structure may also be applied.

[0094] Each pixel PX of the display device 1 according to an embodiment includes three transistors DTR, STR1, and STR2 and an energy storage capacitor CST in addition to the light emitting element EMD.

[0095] The light emitting element EMD can emit light according to the current supplied through the driving transistor DTR. The light emitting element EMD can be implemented by an organic light emitting diode, a micro light emitting diode, a nano light emitting diode, etc.

[0096] A first electrode (e.g., an anode) of the light-emitting element EMD can be connected to the source electrode of the driving transistor DTR, and a second electrode (e.g., a cathode) of the light-emitting element EMD can be connected to a second power line ELVSL that supplies a low potential voltage (a second power supply voltage) lower than a high potential voltage (a first power supply voltage) of the first power line ELVDL.

[0097] The driving transistor DTR can adjust the current flowing from the first power line ELVDL supplying the first power supply voltage to the light emitting element EMD according to the voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor DTR can be connected to the first source / drain electrode of the first switching transistor STR1, the source electrode of the driving transistor DTR can be connected to the first electrode of the light emitting element EMD, and the drain electrode of the driving transistor DTR can be connected to the first power line ELVDL applying the first power supply voltage.

[0098] The first switch transistor STR1 may be turned on according to a scan signal of the scan line SCL, thereby connecting the data line DTL to the gate electrode of the drive transistor DTR. The gate electrode of the first switch transistor STR1 may be connected to the scan line SCL, the first source / drain electrode of the first switch transistor STR1 may be connected to the gate electrode of the drive transistor DTR1, and the second source / drain electrode of the first switch transistor STR1 may be connected to the data line DTL.

[0099] The second switch transistor STR2 can be turned on according to the sensing signal of the sensing signal line SSL, thereby connecting the reference voltage line RVL to the source electrode of the driving transistor DTR. The gate electrode of the second switch transistor STR2 can be connected to the sensing signal line SSL, the first source / drain electrode of the second switch transistor STR2 can be connected to the reference voltage line RVL, and the second source / drain electrode of the second switch transistor STR2 can be connected to the source electrode of the driving transistor DTR.

[0100] In one embodiment, the first source / drain electrodes of the first switch transistor STR1 and the second switch transistor STR2 may be source electrodes, and the second source / drain electrodes of the first switch transistor STR1 and the second switch transistor STR2 may be drain electrodes, but this is not limited thereto and the opposite may also be true.

[0101] The energy storage capacitor CST may be formed between the gate electrode and the source electrode of the driving transistor DTR. The energy storage capacitor CST may store a difference voltage between the gate voltage and the source voltage of the driving transistor DTR.

[0102] The driving transistor DTR, the first switching transistor STR1 and the second switching transistor STR2 may be formed by thin film transistors. Figure 5The description is centered on the case where the driving transistor DTR, the first switch transistor STR1, and the second switch transistor STR2 are N-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), but is not limited to this. That is, the driving transistor DTR, the first switch transistor STR1, and the second switch transistor STR2 may also be P-type MOSFETs, or one part may be N-type MOSFETs and the other part may be P-type MOSFETs.

[0103] Figure 6 is a plan view schematically showing a display area of ​​a display substrate in a display device according to an embodiment, Figure 7 It is a plan view schematically showing a display area of ​​a color conversion substrate in a display device according to an embodiment.

[0104] exist Figure 1 and Figure 2 Further reference Figure 6 and Figure 7 In the display area DA of the display substrate 100, a plurality of light emitting areas LA1, LA2, LA3, LA4, LA5, LA6 and a non-light emitting area NLA may be defined. The light emitting areas LA1, LA2, LA3, LA4, LA5, LA6 may be areas where light generated from the light emitting element EMD of the display substrate 100 is emitted to the outside of the display substrate 100, and the non-light emitting area NLA may be an area where light is not emitted to the outside of the display substrate 100.

[0105] In one embodiment, the light emitted from each of the light emitting areas LA1, LA2, LA3, LA4, LA5, and LA6 of the display substrate 100 to the color conversion substrate 200 may be light of a third color. In one embodiment, the light of the third color may be blue light, and may have a peak wavelength in the range of about 440 nm to about 480 nm. The peak wavelength may refer to a wavelength at which the intensity becomes the maximum in a wavelength region.

[0106] In one embodiment, in the display area DA of the display substrate 100, the first light emitting area LA1, the second light emitting area LA2 and the third light emitting area LA3 may be repeatedly arranged in sequence along the first direction DR1 in the first row RL1. In addition, the fourth light emitting area LA4, the fifth light emitting area LA5 and the sixth light emitting area LA6 may be repeatedly arranged in sequence along the first direction DR1 in the second row RL2 adjacent to the first row RL1 along the second direction DR2.

[0107] In one embodiment, the first light emitting region LA1 may have a predetermined first width WL1 in the first direction DR1, the second light emitting region LA2 may have a predetermined second width WL2 in the first direction DR1, and the third light emitting region LA3 may have a predetermined third width WL3 in the first direction DR1. The first width WL1 of the first light emitting region LA1 may be narrower than the second width WL2 of the second light emitting region LA2 and the third width WL3 of the third light emitting region LA3. In one embodiment, the second width WL2 of the second light emitting region LA2 and the third width WL3 of the third light emitting region LA3 may also be different from each other. In addition, the second width WL2 of the second light emitting region LA2 may be wider than the third width WL3 of the third light emitting region LA3. In addition, in one embodiment, the area of ​​the first light emitting region LA1 may be smaller than the area of ​​the second light emitting region LA2 and the area of ​​the third light emitting region LA3. The area of ​​the second light emitting region LA2 may be larger than the area of ​​the third light emitting region LA3. However, one embodiment is not limited to the aforementioned example, for example, the area of ​​the second light emitting region LA2 may also be smaller than the area of ​​the third light emitting region LA3.

[0108] In other embodiments, the first width WL1 of the first light emitting region LA1, the second width WL2 of the second light emitting region LA2, and the third width WL3 of the third light emitting region LA3 may be substantially the same. In other embodiments, the area of ​​the first light emitting region LA1, the area of ​​the second light emitting region LA2, and the area of ​​the third light emitting region LA3 may be substantially the same.

[0109] The fourth light emitting area LA4 adjacent to the first light emitting area LA1 in the second direction DR2 is different from the first light emitting area LA1 only in that it is located in the second row RL2, and the width, area, and structure configured in the area may be substantially the same as those of the first light emitting area LA1. Similarly, the fifth light emitting area LA5 adjacent to the second light emitting area LA2 in the second direction DR2 may be formed by substantially the same structure as that of the second light emitting area LA2, and the sixth light emitting area LA6 adjacent to the third light emitting area LA3 in the second direction DR2 may be formed by substantially the same structure as that of the third light emitting area LA3.

[0110] A plurality of light-transmitting areas TA1, TA2, TA3, TA4, TA5, TA6 and a light-shielding area BA may be defined in the display area DA of the color conversion substrate 200. The light-transmitting areas TA1, TA2, TA3, TA4, TA5, TA6 may be areas that allow light emitted from the display substrate 100 to pass through the color conversion substrate 200 and provide the light to the outside of the display device 1. The light-shielding area BA may be an area that does not transmit light emitted from the display substrate 100.

[0111] In one embodiment, in the display area DA of the color conversion substrate 200, the first light-transmitting area TA1, the second light-transmitting area TA2 and the third light-transmitting area TA3 may be repeatedly arranged in the first row RT1 along the first direction DR1. The first light-transmitting area TA1 may correspond to or overlap the first light-emitting area LA1. Similarly, the second light-transmitting area TA2 may correspond to or overlap the second light-emitting area LA2, and the third light-transmitting area TA3 may correspond to or overlap the third light-emitting area LA3.

[0112] In one embodiment, the light of the third color provided from the display substrate 100 may be provided to the outside of the display device 1 through the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3. If the light emitted from the first light-transmitting area TA1 to the outside of the display device 1 is called the third emitted light, the light emitted from the second light-transmitting area TA2 to the outside of the display device 1 is called the second emitted light, and the light emitted from the third light-transmitting area TA3 to the outside of the display device 1 is called the first emitted light, then the third emitted light may be the light of the third color, the second emitted light may be the light of the second color different from the third color, and the first emitted light may be the light of the first color different from the third color and the second color. In one embodiment, as described above, the light of the third color may be blue light having a peak wavelength in the range of about 440 nm to about 480 nm, and the light of the second color may be green light having a peak wavelength in the range of about 510 nm to about 550 nm. In addition, the light of the first color may be red light having a peak wavelength in the range of about 610 nm to about 650 nm. However, the present invention is not limited thereto, and the light of the second color may be red light and the light of the first color may be green light.

[0113] In the second row RT2 adjacent to the first row RT1 along the second direction DR2, the fourth light-transmitting area TA4, the fifth light-transmitting area TA5 and the sixth light-transmitting area TA6 may be repeatedly arranged in sequence along the first direction DR1. The fourth light-transmitting area TA4 may correspond to or overlap with the fourth light-emitting area LA4, the fifth light-transmitting area TA5 may correspond to or overlap with the fifth light-emitting area LA5, and the sixth light-transmitting area TA6 may correspond to or overlap with the sixth light-emitting area LA6.

[0114] In one embodiment, the first light-transmitting area TA1 may have a predetermined first width WT1 in the first direction DR1, the second light-transmitting area TA2 may have a predetermined second width WT2 in the first direction DR1, and the third light-transmitting area TA3 may have a predetermined third width WT3 in the first direction DR1. The first width WT1 of the first light-transmitting area TA1 may be narrower than the second width WT2 of the second light-transmitting area TA2 and the third width WT3 of the third light-transmitting area TA3. In one embodiment, the second width WT2 of the second light-transmitting area TA2 and the third width WT3 of the third light-transmitting area TA3 may also be different from each other. The second width WT2 of the second light-transmitting area TA2 may also be wider than the third width WT3 of the third light-transmitting area TA3, or may also be narrower than the third width WT3 of the third light-transmitting area TA3. In addition, in one embodiment, the area of ​​the first light-transmitting area TA1 may be smaller than the area of ​​the second light-transmitting area TA2 and the area of ​​the third light-transmitting area TA3, or may be larger than the area of ​​the second light-transmitting area TA2 and the area of ​​the third light-transmitting area TA3.

[0115] However, the present invention is not limited to the above examples. In other embodiments, the first width WT1 of the first light-transmitting area TA1, the second width WT2 of the second light-transmitting area TA2, and the third width WT3 of the third light-transmitting area TA3 may be substantially the same. In other embodiments, the area of ​​the first light-transmitting area TA1 may be substantially the same as the area of ​​the second light-transmitting area TA2 and the area of ​​the third light-transmitting area TA3.

[0116] The width, area, and structure of the first light-transmitting area TA1 and the fourth light-transmitting area TA4 adjacent to each other along the second direction DR2, as well as the color of the light emitted to the outside of the display device 1, can be substantially the same. Similarly, the second light-transmitting area TA2 and the fifth light-transmitting area TA5 adjacent to each other along the second direction DR2 can be substantially formed by the same structure, and the color of the light emitted to the outside of the display device 1 can also be substantially the same. In addition, the third light-transmitting area TA3 and the sixth light-transmitting area TA6 adjacent to each other along the second direction DR2 can be substantially formed by the same structure, and the color of the light emitted to the outside of the display device 1 can also be substantially the same.

[0117] In the display area DA, a light shielding area BA may be provided around the light-transmitting areas TA1, TA2, TA3, TA4, TA5, and TA6 of the color conversion substrate 200. In one embodiment, if the light shielding area BA is divided by area, it may include a first light shielding area BA1, a second light shielding area BA2, a third light shielding area BA3, a fourth light shielding area BA4, a fifth light shielding area BA5, a sixth light shielding area BA6, and a seventh light shielding area BA7.

[0118] The first light-shielding area BA1 may be located between the first light-transmitting area TA1 and the second light-transmitting area TA2, the second light-shielding area BA2 may be located between the second light-transmitting area TA2 and the third light-transmitting area TA3, and the third light-shielding area BA3 may be located between the third light-transmitting area TA3 and the first light-transmitting area TA1 adjacent to the third light-transmitting area TA3.

[0119] The fourth light-shielding area BA4 can be located between the fourth light-transmitting area TA4 and the fifth light-transmitting area TA5, the fifth light-shielding area BA5 can be located between the fifth light-transmitting area TA5 and the sixth light-transmitting area TA6, and the sixth light-shielding area BA6 can be located between the sixth light-transmitting area TA6 and the fourth light-transmitting area TA4 adjacent to the sixth light-transmitting area TA6.

[0120] The seventh light blocking area BA7 may be located between the first row RT1 and the second row RT2 adjacent to each other along the second direction DR2 .

[0121] Figure 8 It is along Figure 6 and Figure 7 A cross-sectional view of the display device taken along line X2-X2′.

[0122] Reference Figure 8 The display device 1 may include a display substrate 100 , a color conversion substrate 200 opposite to the display substrate 100 , and a filling material 300 bonding the display substrate 100 and the color conversion substrate 200 .

[0123] The display substrate 100 may include a first substrate 110 , a circuit layer CCL, a light emitting element layer EML, and a packaging structure 170 .

[0124] The first substrate 110 may include a transparent material. For example, the first substrate 110 may include a transparent insulating material such as glass, quartz, etc. The first substrate 110 may be a rigid substrate. However, the first substrate 110 is not limited thereto, and may also include a plastic such as polyimide, and may also have a flexible property that can be bent, curved, folded, or curled.

[0125] The circuit layer CCL may be disposed on the first substrate 110. The circuit layer CCL is described in detail with reference to Figure 4 and Figure 5 It has been described, so it is omitted.

[0126] The light emitting element layer EML may be disposed on the circuit layer CCL. The light emitting element layer EML may include a pixel electrode PXE, a pixel definition layer PDL, a light emitting layer LEL, and a common electrode CME.

[0127] The pixel electrode PXE may be a first electrode (e.g., an anode) of the light emitting element EMD. The pixel electrode PXE may have a laminated structure of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), zinc oxide (ZnO), indium oxide (Indium Oxide: In 2 O 3 ) and a laminated film structure of a reflective material layer such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or a mixture thereof. The material layer with a high work function can be arranged in an upper layer higher than the reflective material layer, so that it can be arranged close to the light-emitting layer LEL. The pixel electrode PXE can have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, ITO / Ag / ITO, but is not limited thereto.

[0128] The pixel definition film PDL may be arranged along the boundary of the pixel PX on one surface of the first substrate 110. The pixel definition film PDL may be arranged on the pixel electrode PXE, including an opening portion exposing the pixel electrode PXE. The pixel definition film PDL and its opening portion may be used to divide the light-emitting area EMA and the non-light-emitting area NEM. The pixel definition film PDL may include an organic insulating material such as acrylics resin, epoxys resin, phenolics resin, polyamides resin, polyimides rein, unsaturated polyesters resin, poly phenylene ethers resin, polyphenylenesulfides resin or benzocyclobutene (BCB). The pixel definition film PDL may also include an inorganic material.

[0129] The light-emitting layer LEL may be disposed on the pixel electrode PXE exposed by the pixel definition film PDL. In one embodiment where the display device 1 is an organic light-emitting display device, the light-emitting layer LEL may include an organic layer containing an organic substance. The organic layer may include an organic light-emitting layer, and may include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary layer for auxiliary light emission, depending on the situation. In other embodiments, where the display device 1 is a micro-LED display device, a nano-LED display device, etc., the light-emitting layer LEL may include an inorganic substance such as an inorganic semiconductor.

[0130] In some embodiments, the light emitting layer LEL may have a tandem structure including a plurality of organic light emitting layers arranged in an overlapping manner in the thickness direction and a charge generation layer arranged between the plurality of organic light emitting layers. The overlapping organic light emitting layers may emit light of the same wavelength, but may also emit light of different wavelengths. At least a portion of the light emitting layer LEL of each pixel PX may be separated from the same layer of an adjacent pixel PX.

[0131] In one embodiment, the wavelength of light L emitted by each light emitting layer LEL may be the same for each color pixel PX. For example, the light emitting layer LEL of each color pixel PX may emit blue light or ultraviolet light, and the color control structure described later includes a wavelength conversion layer WCL, so that each color can be displayed for each pixel PX.

[0132] In other embodiments, the wavelength of the light L emitted by each light emitting layer LEL may also be different for each color pixel PX. For example, the light emitting layer LEL of the first color pixel PX may emit light of a first color, the light emitting layer LEL of the second color pixel PX may emit light of a second color, and the light emitting layer LEL of the third color pixel PX may emit light of a third color.

[0133] The common electrode CME can be configured on the light-emitting layer LEL. The common electrode CME can be connected not only to the light-emitting layer LEL, but also to the upper surface of the pixel definition film PDL. The common electrode CME can be connected without distinguishing each pixel PX. The common electrode CME can be a whole-surface electrode configured on the entire surface without distinguishing pixels PX. The common electrode CME can be a second electrode (for example, a cathode) of the light-emitting element EMD. The common electrode CME can include a material layer with a low work function such as Li, Ca, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, Ba or their compounds (for example, BaF, etc.) or mixtures (for example, a mixture of Ag and Mg, etc.) or LiF / Ca, LiF / Al. The common electrode CME may also include a transparent metal oxide layer configured on the material layer with a low work function.

[0134] The pixel electrode PXE, the light emitting layer LEL, and the common electrode CME may constitute a light emitting element EMD (eg, an organic light emitting element). Light emitted from the light emitting layer LEL may be emitted toward an upper direction through the common electrode CME.

[0135] The encapsulation structure 170 may be disposed on the common electrode CME. The encapsulation structure 170 may include at least one thin film encapsulation layer and a scattering layer SCT. For example, the encapsulation structure 170 may include a scattering layer SCT, a first inorganic film 171 , an organic film 172 , and a second inorganic film 173 .

[0136] The first inorganic film 171 may be disposed on the light emitting element layer EML. The first inorganic film 171 may be disposed on the scattering layer SCT. The first inorganic film 171 may be in direct contact with the scattering layer SCT. The first inorganic film 171 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) etc. The thickness of the first inorganic film 171 may be approximately 0.7 μm to 1 μm.

[0137] The organic film 172 may be disposed on the first inorganic film 171. The organic film 172 may include an organic insulating material such as acrylic resin, epoxy resin, phenolics resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylenesulfide resin, or benzocyclobutene (BCB). The thickness of the organic film 172 may be approximately 2 μm to 5 μm.

[0138] The second inorganic film 173 may be disposed on the organic film 172. The second inorganic film 173 may include the same material as the first inorganic film 171 described above. For example, the second inorganic film 173 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) etc. The thickness of the second inorganic film 173 may be approximately 0.7 μm to 1.0 μm.

[0139] The scattering layer SCT may be disposed at a lower portion of the first inorganic film 171. The scattering layer SCT may be disposed on the light emitting element layer EML. For example, the scattering layer SCT may be disposed between the first inorganic film 171 and the common electrode CME of the light emitting element layer EML.

[0140] The scattering layer SCT may at least partially include the same material as the first inorganic film 171. For example, the scattering layer SCT may at least partially include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) and other substances.

[0141] In some embodiments, the scattering layer SCT may further include silane (SiH 4 ), nitrous oxide (N 2 O) and ammonia (NH 3 ) of the scattering layer SCT. 4 ), nitrous oxide (N 2 O) and ammonia (NH 3 ) Such a material can be obtained by a manufacturing method S1 of a display device according to an embodiment described later (refer to Fig.11 )form.

[0142] The color conversion substrate 200 may be disposed on the encapsulation structure 170 to face the encapsulation structure 170. The color conversion substrate 200 may include a second substrate 210, a light shielding member BML, a color filter layer CFL, a first cap layer 220, a partition wall PTL, a wavelength conversion layer WCL, a light transmission layer TPL, and a second cap layer 230.

[0143] The second substrate 210 may include a transparent material. The second substrate 210 may include a transparent insulating material such as glass, quartz, etc. The second substrate 210 may be a rigid substrate. However, the second substrate 210 is not limited thereto, and the second substrate 210 may also include a plastic such as polyimide, etc., and may also have a flexible property that can be bent, curved, folded, or curled.

[0144] The second substrate 210 may also use the same substrate as the first substrate 110, but the constituent material, thickness, transmittance, etc. may be different. For example, the second substrate 210 may have a greater transmittance than the first substrate 110. The second substrate 210 may be thicker or thinner than the first substrate 110.

[0145] The light shielding member BML may be arranged on a surface of the second substrate 210 facing the first substrate 110 along the boundary of the pixel PX. The light shielding member BML may overlap with the pixel definition film PDL of the display substrate 100 and be located in the non-luminous area NEM. The light shielding member BML may include an opening that exposes a surface of the second substrate 210 that overlaps with the luminous area EMA. The light shielding member BML may be formed in a lattice shape in a plan view.

[0146] The light shielding member BML may be formed to include an organic substance. The light shielding member BML may absorb external light, thereby reducing color distortion caused by external light reflection. In addition, the light shielding member BML may prevent the light L emitted from the light emitting layer LEL from invading adjacent pixels PX.

[0147] In one embodiment, the light shielding member BML can absorb all visible light wavelengths. The light shielding member BML can include a light absorbing substance. For example, the light shielding member BML can be formed of a substance used as a black matrix of the display device 1.

[0148] In other embodiments, the light shielding component BML may also absorb light of a specific wavelength in the visible light wavelength and allow light of other specific wavelengths to pass through. For example, the light shielding component BML may include the same material as the color filter layer CFL. Specifically, the light shielding component BML may be formed of the same material as the blue color filter layer. In some embodiments, the light shielding component BML may also be formed integrally with the blue color filter layer. In addition, the light shielding component BML may also be omitted.

[0149] The color filter layer CFL may be disposed on the side of the second substrate 210 where the light shielding member BML is disposed. The color filter layer CFL may be disposed on the side of the second substrate 210 exposed by the opening of the light shielding member BML. Furthermore, the color filter layer CFL may also be partially disposed on the adjacent light shielding member BML.

[0150] The color filter layer CFL may include a first color filter layer CFL1 configured in a first color pixel PX, a second color filter layer CFL2 configured in a second color pixel PX, and a third color filter layer CFL3 configured in a third color pixel PX. The color filter layer CFL may include a colorant such as a dye or a pigment that absorbs wavelengths other than the corresponding color wavelength. The first color filter layer CFL1 may be a red color filter layer, the second color filter layer CFL2 may be a green color filter, and the third color filter layer CFL3 may be a blue color filter layer. The figure illustrates a case where adjacent color filter layers CFL are configured to be spaced apart from each other on the light shielding part BML, but adjacent color filter layers CFL may also at least partially overlap on the light shielding part BML.

[0151] The first cover layer 220 may be disposed on the color filter layer CFL. The first cover layer 220 may prevent impurities such as moisture or air from penetrating from the outside and causing the color filter layer CFL to be damaged or contaminated. In addition, the first cover layer 220 may prevent the colorant of the color filter layer CFL from diffusing to other components.

[0152] The first cover layer 220 may be connected to one side of the color filter layer CFL (at Figure 8 The first cap layer 220 may be formed of an inorganic substance. For example, the first cap layer 220 may be formed to include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, silicon oxynitride, etc.

[0153] The partition wall PTL may be disposed on the first cover layer 220. The partition wall PTL may be located in the non-luminous region NEM. The partition wall PTL may be configured to overlap with the light shielding member BML. The partition wall PTL may include an opening portion that exposes the color filter layer CFL. The partition wall PTL may be formed to include a photosensitive organic substance, but is not limited thereto. The partition wall PTL may further include a light shielding substance.

[0154] The wavelength conversion layer WCL and / or the light-transmitting layer TPL may be disposed in a space exposed by the opening of the partition wall PTL. The wavelength conversion layer WCL and the light-transmitting layer TPL may be formed by an inkjet process using the partition wall PTL as a bank, but are not limited thereto.

[0155] In an embodiment where the light emitting layer LEL of each pixel PX emits light of a third color, the wavelength conversion layer WCL may include a first wavelength conversion pattern WCL1 configured in the first color pixel PX and a second wavelength conversion pattern WCL2 configured in the second color pixel PX. A light-transmitting layer TPL may be configured in the third color pixel PX.

[0156] The first wavelength conversion pattern WCL1 may include a first base resin BRS1 and a first wavelength conversion material WCP1 disposed inside the first base resin BRS1. The second wavelength conversion pattern WCL2 may include a second base resin BRS2 and a second wavelength conversion material WCP2 disposed inside the second base resin BRS2. The light-transmitting layer TPL may include a third base resin BRS3 and a scatterer SCP disposed inside the third base resin BRS3.

[0157] The first to third base resins BRS1 to BRS3 may include a light-transmitting organic substance. For example, the first to third base resins BRS1 to BRS3 may be formed to include epoxy resin, acrylic resin, Cardo resin, or imide resin, etc. The first to third base resins BRS1 to BRS3 may all be formed of the same substance, but are not limited thereto.

[0158] The scatterer SCP may be metal oxide particles or organic particles. Examples of the metal oxide particles include titanium oxide (TiO 2 )、ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 ), zinc oxide (ZnO) or tin oxide (SnO 2 ) etc., and examples of the organic particles include acrylic resins and urethane resins.

[0159] The first wavelength conversion material WCP1 may be a material that converts the third color into the first color, and the second wavelength conversion material WCP2 may be a material that converts the third color into the second color. The first wavelength conversion material WCP1 and the second wavelength conversion material WCP2 may be quantum dots, quantum rods, phosphors, etc. The quantum dots may include IV group nanocrystals, II-VI group compound nanocrystals, III-V group compound nanocrystals, IV-VI group nanocrystals, or a combination thereof.

[0160] The first and second wavelength conversion patterns WCL1 and WCL2 may further include a scatterer SCP that increases wavelength conversion efficiency.

[0161] The light-transmitting layer TPL configured in the third color pixel PX can transmit the third color light emitted from the light-emitting layer LEL while maintaining the wavelength. The scatterer SCP of the light-transmitting layer TPL can play a role in adjusting the emission path of the light emitted through the light-transmitting layer TPL. The light-transmitting layer TPL may not include a wavelength conversion substance.

[0162] The second cap layer 230 may be disposed on the wavelength conversion layer WCL, the light-transmitting layer TPL, and the partition wall PTL. The second cap layer 230 may be formed of an inorganic substance. The second cap layer 230 may be formed to include a substance selected from the substances listed as the substances of the first cap layer 220. The second cap layer 230 and the first cap layer 220 may be formed of the same substance, but are not limited thereto.

[0163] A filling material 300 may be disposed between the display substrate 100 and the color conversion substrate 200. The filling material 300 may fill the space between the display substrate 100 and the color conversion substrate 200, and may also serve to bond and combine the display substrate 100 and the color conversion substrate 200. The filling material 300 may be disposed between the encapsulation structure 170 of the display substrate 100 and the second cover layer 230 of the color conversion substrate 200. The filling material 300 may be formed of Si-based organic substances, epoxy-based organic substances, etc., but is not limited thereto.

[0164] The packaging structure 170 will be described in more detail below.

[0165] Fig. 9 It is magnified Figure 8 Magnified view of section "A". Fig.10 It is a cross-sectional view showing a state where light is scattered by a scattering layer according to an embodiment.

[0166] Reference Fig. 9 and Fig.10 , the scattering layer SCT may include a plurality of concave-convex CCVs. The plurality of concave-convex CCVs may be arranged on the upper surface of the scattering layer SCT. The plurality of concave-convex CCVs may be arranged in the first direction DR1 and the second direction DR2. The accompanying drawings show a situation in which adjacent concave-convex CCVs among the plurality of concave-convex CCVs are in direct contact with each other, but are not limited thereto. For example, the plurality of concave-convex CCVs may also be arranged at constant intervals in the first direction DR1 and the second direction DR2, or may be arranged at irregular intervals in the first direction DR1 and the second direction DR2. Alternatively, a portion of the plurality of concave-convex CCVs may be in direct contact with each other, and the remaining plurality of concave-convex CCVs may be arranged to be spaced apart.

[0167] The plurality of concavoconvex CCVs may be in a hemispherical shape. Fig. 9 As shown, the upper surfaces of the plurality of concavo-convex portions CCV may be in an arc shape in a cross section taken along the third direction DR3.

[0168] exist Fig. 9 The case where the plurality of concave-convex CCVs are all of the same size is shown in FIG. 1 , but the present invention is not limited thereto. The plurality of concave-convex CCVs may be of different sizes. The average radius R1 of the plurality of concave-convex CCVs may be approximately 0.15 μm to 0.25 μm. The average radius R1 may be the average value of the radii of the plurality of concave-convex CCVs. The plurality of concave-convex CCVs may be formed in the display device manufacturing method S1 described later (see FIG. 1 ). Fig.11 ) is formed by the plasma particles, ion particles, etc. generated in the deposition process of the ion deposition process being gathered together by attraction. The plurality of concave-convex CCVs can be formed into a hemispherical shape which is the most stable form due to the attraction acting in all directions between the particles.

[0169] The thickness TH1 of the scattering layer SCT may be 0.3 to 0.75 times the thickness TH2 of the first inorganic film 171. For example, the thickness TH1 of the scattering layer SCT may be approximately 0.3 μm to 0.5 μm.

[0170] Reference Fig.10 The first inorganic film 171 may include a polymer (eg, first particles) PLM. The polymer PLM may be made of silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) and other materials. The polymer PLM may be a display device manufacturing method S1 described later (refer to Fig.11 ) in which the completely ionized free radicals RDC1 and RDC2 (refer to Fig.15 ) particles formed by aggregation.

[0171] The scattering layer SCT may include condensed scattering particles (eg, second particles) AGL. For example, the scattering layer SCT may include both the polymer PLM included in the first inorganic film 171 and the scattering particles AGL not included in the first inorganic film 171. The scattering particles AGL may be larger in size than the polymer PLM. The scattering particles AGL may include silane (SiH 4 ), nitrous oxide (N 2 O) and ammonia (NH 3 The scattering particles AGL may be any one of the following display device manufacturing method S1 (see Fig.11 ) in which the completely ionized free radicals RDC1 and RDC2 (refer to Fig.15 ) polymerized to form polymer PLM and incompletely ionized fragmented precursor FRG (refer to Fig.16 ) particles formed by agglomeration. Fig.16 ) may include silane (SiH 4 ), nitrous oxide (N 2 O) and ammonia (NH 3 )

[0172] The display device 1 involved in this embodiment includes scattering particles AGL, so that the scattering layer SCT can function as a guide film. For example, the light L1 emitted from the light-emitting layer LEL can pass through the scattering layer SCT before passing through the common electrode CME and reaching the first inorganic film 171. In this case, the scattering particles AGL included in the scattering layer SCT can generate light L2 refracted and scattered in various directions. As a result, the refracted and scattered light L2 can increase the guided light reaching the color conversion element (i.e., the first wavelength conversion pattern WCL1, the second wavelength conversion pattern WCL2, and the light-transmitting layer TPL) included in the color conversion substrate 200. As a result, the light efficiency of the display device 1 can be improved.

[0173] The display device 1 involved in this embodiment includes scattering particles AGL, so that the scattering layer SCT can function as an antireflective film. For example, through the scattering particles AGL of the scattering layer SCT, the light L3 incident from the outside through the display surface of the display device 1 can be refracted and scattered in various directions. The scattered light L4 formed in this way will not be reflected to the outside again through the display surface but can disappear inside the scattering layer SCT or inside the display device 1, or the brightness of the light will be weakened and will not be recognized by the outside.

[0174] Specifically, Table 1 below is a table comparing the external light reflectance of a display device in the prior art that does not include a scattering layer SCT and the external light reflectance of the display device 1 according to the present embodiment that includes a scattering layer SCT. Table 1 below is a table showing external light reflectance values ​​measured in an SCI (Specular Component Included) mode and an SCE (Specular Component Excluded) mode.

[0175]

Table 1

[0176] SCI SCE Embodiments of the prior art 1.09 0.61 This embodiment 1.03 0.58

[0177] In the case of the display device involved in the embodiment of the prior art, the reflectivity value in the SCI mode is 1.09, and the reflectivity value in the SCE mode is 0.61. In contrast, in the case of the display device 1 involved in this embodiment, the reflectivity value in the SCI mode is 1.03, and the reflectivity value in the SCE mode is 0.58.

[0178] The lower the reflectivity value in the SCI mode and the SCE mode, the less the external light is reflected in the display device 1 and recognized again from the outside. Therefore, it can be seen that the display device 1 involved in this embodiment has a better external light reflection prevention effect than the display device in the prior art.

[0179] Hereinafter, a method for manufacturing a display device according to an embodiment will be described.

[0180] Fig.11 It is a flowchart showing a method for manufacturing a display device according to an embodiment.

[0181] exist Figure 8 Further reference Fig.11 A manufacturing method S1 of a display device involved in an embodiment may include a step S110 of forming a first substrate, a circuit layer and a light-emitting element layer, a step S120 of forming a scattering layer on the light-emitting element layer, a step S130 of forming a first inorganic film on the scattering layer, a step S140 of forming an organic film on the first inorganic film, and a step S150 of forming a second inorganic film on the organic film.

[0182] First, in step S110 of forming the first substrate, the circuit layer, and the light emitting element layer, the circuit layer CCL may be formed on the first substrate 110, and the light emitting element layer EML may be formed on the circuit layer CCL. The circuit layer CCL and the light emitting element layer EML may be formed by various well-known processes such as a photolithography process or a deposition process according to their structures.

[0183] Second, in the step of forming a scattering layer on the light emitting element layer S120, a scattering layer SCT may be formed on the light emitting element layer EML. The scattering layer SCT may include not only silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) and other substances, and may also include silane (SiH 4 ), nitrous oxide (N 2 O) and ammonia (NH 3 ) Any one of the above. The description of step S120 of forming a scattering layer on the light emitting element layer will be referred to Figures 12 to 17 To be discussed later.

[0184] In the step S130 of forming a first inorganic film on the scattering layer, a first inorganic film 171 may be formed on the scattering layer SCT. The first inorganic film 171 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y The description of step S130 of forming the first inorganic film on the scattering layer will be referred to together with the description of step S120 of forming the scattering layer on the light emitting element layer. Figures 12 to 17 To be discussed later.

[0185] In the step S140 of forming an organic film on the first inorganic film, an organic film 172 may be formed on the first inorganic film 171. The organic film 172 may include an organic insulating material such as acrylic resin, epoxy resin, phenolics resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylenesulfide resin, or benzocyclobutene (BCB). The organic film 172 may be formed by directly coating the material or curing the monomer by heat or ultraviolet rays.

[0186] In the step S150 of forming the second inorganic film on the organic film, the second inorganic film 173 may be formed on the organic film 172. The second inorganic film 173 may be formed by the same material and the same process as the first inorganic film 171, and thus detailed description thereof will be omitted.

[0187] Fig.12 It is a sequence diagram showing step S120 according to one embodiment. Fig.13 It is a sequence diagram showing step S130 according to one embodiment. Fig.14 It is a conceptual diagram for explaining step S120 and step S130 involved in one embodiment. Fig.15 It is a schematic cross-sectional view for explaining step S120 according to one embodiment. Fig.16 It is a schematic cross-sectional view for explaining step S120 according to one embodiment. Fig.17 It is a schematic cross-sectional view for explaining step S130 according to an embodiment.

[0188] Reference Fig.12 The step S120 of forming a scattering layer on the light emitting element layer may include a step S121 of starting STT3 of reaction gas injection simultaneously with the start STT1 of discharge power application and the start STT2 of discharge gas injection, and a step S122 of ending END3 of reaction gas injection simultaneously with the end END1 of discharge power application and the end END2 of discharge gas injection.

[0189] Reference Fig.13The step S130 of forming the first inorganic film on the scattering layer may include a step S131 of starting STT1 of applying a discharge power source and starting STT2 of injecting a discharge gas after a constant time has passed since the start STT3 of injecting a reaction gas, and a step S132 of ending END1 of applying a discharge power source and ending END2 of injecting a discharge gas after a constant time has passed since the end END3 of injecting a reaction gas.

[0190] exist Fig. 9 Further reference Figures 12 to 17 The scattering layer SCT, the first inorganic film 171 and the second inorganic film 173 may be formed by a chemical vapor deposition process (Chemical Vapor Deposition; CVD) and / or a plasma enhanced chemical vapor deposition process (Plasma Enhanced Chemical Vapor Deposition; PECVD). In this specification, for the sake of convenience, the case where the scattering layer SCT, the first inorganic film 171 and the second inorganic film 173 are formed by a plasma enhanced chemical vapor deposition process is taken as an example for explanation.

[0191] The deposition device DPS may supply a reaction gas RG and a discharge gas CG into a chamber (not shown). The reaction gas RG may include a first reaction gas RG1 and a second reaction gas RG2. As an example, the first reaction gas RG1 may include silane (SiH 4 ) gas as the source gas.

[0192] In one embodiment, the first inorganic film 171 and the second inorganic film 173 include silicon oxide (SiO x ), the second reaction gas RG2 may be nitrous oxide (N 2 In other embodiments, the first inorganic film 171 and the second inorganic film 173 include silicon nitride (SiN x ), the second reaction gas RG2 may be ammonia (NH 3 In another embodiment, the first inorganic film 171 and the second inorganic film 173 include silicon oxide (SiO x ) and silicon nitride (SiN x ) In both cases, the second reaction gas RG2 may be a mixture of nitrous oxide (N 2 O) and ammonia (NH 3 ) of gas.

[0193] The discharge gas CG may be oxygen (O 2 ), nitrogen (N 2 ), argon (Ar) and helium (He) and other inert gases. In some embodiments, oxygen (O2 ) It is preferable that the first inorganic film 171 and the second inorganic film 173 include silicon oxide (SiO x ) is used, nitrogen (N 2 ) It is preferable that the first inorganic film 171 and the second inorganic film 173 include silicon nitride (SiN x ) is used in the case of. However, this is not limited to this. The discharge gas CG can usually be supplied together with the discharge power supply applied in order to form the plasma PLS.

[0194] If the reaction gas RG and the discharge gas CG are supplied and a discharge power source is applied, a plasma PLS may be formed between the deposition device DPS and the first substrate 110. If the plasma PLS is formed, the reaction gas RG may be dissociated in the form of radicals RDC1 and RDC2. The first radical RDC1 may be a radical generated by the dissociation of the first reaction gas RG1, and the second radical RDC2 may be a radical generated by the dissociation of the second reaction gas RG2.

[0195] like Fig.12 and Fig.14 As shown, in the step S120 of forming the scattering layer on the light emitting element layer, the start STT3 of the reaction gas injection can be performed simultaneously with the start STT1 of the discharge power supply application and the start STT2 of the discharge gas injection (S121). In addition, the end END3 of the reaction gas injection can be performed simultaneously with the end END1 of the discharge power supply application and the end END2 of the discharge gas injection (S122).

[0196] On the contrary, Fig.13 and Fig.14 As shown, in the step S130 of forming the first inorganic film on the scattering layer, the start STT1 of the discharge power application and the start STT2 of the discharge gas injection may be performed after a constant time has passed after the start STT3 of the reaction gas injection (S131). In addition, the end END1 of the discharge power application and the end END2 of the discharge gas injection may be performed after a constant time has passed after the end END3 of the reaction gas injection (S132).

[0197] In the step S130 of forming the first inorganic film on the scattering layer, the injection of the discharge gas CG and the start of the discharge power supply can be performed after the injection of the reaction gas RG is started, and the injection of the discharge gas CG and the end of the discharge power supply can be performed after the injection of the reaction gas RG is ended, so that the reaction gas RG can be completely dissociated and placed on the first substrate 110 in the form of free radicals RDC1 and RDC2. Fig.17As shown, a polymer PLM formed by polymerization of free radicals RDC1 and RDC2 may be formed on the first substrate 110. The first inorganic film 171 may be formed by film formation of such a polymer PLM. The polymer PLM may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y )wait.

[0198] like Fig.15 As shown, in the step S120 of forming the scattering layer on the light-emitting element layer, a part of the reaction gas RG can also be completely dissociated and placed on the first substrate 110 in the form of free radicals RDC1 and RDC2. However, in the step S120 of forming the scattering layer on the light-emitting element layer, the injection of the reaction gas RG starts at the same time as the start of the application of the discharge power source and the start of the injection of the discharge gas CG, and the injection of the reaction gas RG ends at the same time as the end of the application of the discharge power source and the end of the injection of the discharge gas CG. Therefore, the remaining part of the reaction gas RG cannot fully absorb the discharge energy and cannot be completely dissociated. That is, as Fig.16 As shown, the remaining part of the reaction gas RG may be placed on the first substrate 110 in the form of a fragmented precursor FRG. The fragmented precursor FRG may include the reaction gas RG as it is. For example, the fragmented precursor FRG may include silane (SiH 4 ) gas and nitrous oxide (N 2 O) and / or ammonia (NH 3 ).

[0199] Therefore, the scattering layer SCT can be formed by the polymer PLM formed by the completely dissociated free radicals RDC1 and RDC2 and the fragmented precursor FRG that is not completely dissociated through gravitational condensation to form scattering particles AGL. That is, the scattering particles AGL can be particles formed by the condensation of the polymer PLM and the fragmented precursor FRG. Such scattering particles AGL can form a plurality of concave and convex CCV on the upper surface of the scattering layer SCT.

[0200] According to the manufacturing method S1 of the display device involved in the present embodiment, by forming a scattering layer SCT including scattering particles AGL, the scattering layer SCT can function as a guide film. For example, light L1 emitted from the light emitting layer LEL can pass through the scattering layer SCT before passing through the common electrode CME and reaching the first inorganic film 171. In this case, light L2 refracted and scattered in various directions can be generated by the scattering particles AGL included in the scattering layer SCT. Thus, the refracted and scattered light L2 can increase the guided light reaching the color conversion element (i.e., the first wavelength conversion pattern WCL1, the second wavelength conversion pattern WCL2, and the light-transmitting layer TPL) included in the color conversion substrate 200. Thus, the light efficiency of the display device 1 can be improved.

[0201] In some embodiments, the step S120 of forming the scattering layer on the light emitting element layer and the step S130 of forming the first inorganic film on the scattering layer may be performed in a continuous process. For example, the step S120 of forming the scattering layer on the light emitting element layer may be performed for about several seconds (sec), and the step S130 of forming the first inorganic film on the scattering layer may be performed for about tens of seconds (sec). Since the reaction gas RG and the discharge gas CG used to form the scattering layer SCT and the first inorganic film 171 are the same, the scattering layer SCT and the first inorganic film 171 may be formed in the same chamber by a continuous process using the same deposition device DPS. Therefore, there is no need to prepare a separate device for the guide film additional process, and the process time can be shortened to improve the process efficiency.

[0202] Fig.18 It is a sequence diagram showing step S120_1 which is a modified example of step S120 according to another embodiment. Fig.19 It is a conceptual diagram for explaining step S120_1 and step S130 involved in other embodiments. In the following embodiments, the same reference numerals are used for the same components as those in the previously described embodiments, and repeated descriptions are omitted or simplified, and the differences are mainly described.

[0203] Reference Fig.18 and Fig.19 The manufacturing method S1 of the display device involved in this embodiment is similar to that of the reference Fig.12 The difference of the display device manufacturing method S1 according to the embodiment described above is that in the step S120_1 of forming the scattering layer on the light emitting element layer, the reaction gas injection is terminated after a constant time has passed after the discharge power supply application and the discharge gas injection are terminated.

[0204] More specifically, the step S120_1 of forming a scattering layer on the light-emitting element layer of the manufacturing method S1 of the display device involved in this embodiment may include a step S121_1 of starting STT3 of reaction gas injection simultaneously with the start STT1 of discharge power application and the start STT2 of discharge gas injection, and a step S122_1 of ending END3 of reaction gas injection after a constant time has passed after the end END1 of discharge power application and the end END2 of discharge gas injection.

[0205] like Fig.18 and Fig.19 As shown, in step S120_1 of forming a scattering layer on the light emitting element layer in this embodiment, Fig.12 Similar to the step S120 of forming a scattering layer on the light emitting element layer according to the embodiment described above, the start STT3 of the reaction gas injection may be performed simultaneously with the start STT1 of the discharge power supply application and the start STT2 of the discharge gas injection ( S121_1 ).

[0206] In contrast, in the step S120_1 of forming a scattering layer on the light emitting element layer in the present embodiment, different from the reference Fig.12 In the step S120 of forming a scattering layer on the light emitting element layer according to an embodiment described above, the reaction gas injection may be terminated END3 ( S122_1 ) after a predetermined time has passed since the discharge power supply application is terminated END1 and the discharge gas injection is terminated END2 .

[0207] According to the manufacturing method S1 of the display device involved in this embodiment, when the end END3 of the reaction gas injection is performed after a constant time has passed after the end END1 of the discharge power supply application and the end END2 of the discharge gas injection, the amount of the reaction gas RG that has not fully absorbed the discharge energy and has not been completely dissociated can be increased. That is, the amount of the fragmented precursor FRG that has not been completely dissociated and cannot become the free radicals RDC1 and RDC2 can be increased. As a result, the number and size of the scattering particles AGL formed by the aggregation of the polymer PLM and the fragmented precursor FRG can be increased. Therefore, the degree to which the light L1 emitted from the light-emitting layer LEL is scattered by the scattering layer SCT can be further increased, and the amount of the guided light reaching the color conversion substrate 200 can be increased, so that the light efficiency of the display device 1 can be improved.

[0208] Fig. 20 1 is a sequence diagram showing step S120_2 which is a variation of step S120 according to still another embodiment. Fig.21 It is a conceptual diagram for explaining step S120_2 and step S130 involved in still another embodiment.

[0209] Reference Fig. 20 and Fig.21 The manufacturing method S1 of the display device involved in this embodiment is similar to that of the reference Fig.12 The difference of the manufacturing method S1 of the display device according to the embodiment described above is that in step S120_2 of forming a scattering layer on the light emitting element layer, the discharge power supply is started and the discharge gas injection is started after a constant time has passed after the start of the reaction gas injection.

[0210] More specifically, the step S120_2 of forming a scattering layer on the light-emitting element layer of the manufacturing method S1 of the display device involved in this embodiment may include a step S121_2 of starting STT1 of applying a discharge power source and starting STT2 of injecting a discharge gas after a constant time has passed after starting STT3 of injecting a reaction gas, and a step S122_2 of ending END3 of injecting a reaction gas simultaneously with ending END1 of applying a discharge power source and ending END2 of injecting a discharge gas.

[0211] like Fig. 20 and Fig.21 As shown, in the step S120_2 of forming a scattering layer on the light emitting element layer in this embodiment, different from the reference Fig.12 In the step S120 of forming a scattering layer on the light emitting element layer according to an embodiment described above, the start STT1 of the discharge power supply application and the start STT2 of the discharge gas injection may be performed after a constant time has passed since the start STT3 of the reaction gas injection ( S121_2 ).

[0212] On the contrary, in the step S120_2 of forming a scattering layer on the light emitting element layer in this embodiment, the Fig.12 Similar to step S120 of forming a scattering layer on the light emitting element layer according to one embodiment described above, the reaction gas injection may be terminated END3 ( S122_2 ) simultaneously with the discharge power supply application END1 and the discharge gas injection END2 .

[0213] Fig. 22 1 is a sequence diagram showing step S120_3 which is a variation of step S120 according to still another embodiment. Fig.23 It is a conceptual diagram for explaining step S120_3 and step S130 involved in still another embodiment.

[0214] Reference Fig. 22 and Fig.23 The manufacturing method S1 of the display device involved in this embodiment is similar to that of the reference Fig. 20The difference of the display device manufacturing method S1 according to another embodiment described in the above is that in step S120_3 of forming a scattering layer on the light emitting element layer, the reaction gas injection is terminated after a constant time has passed after the discharge power supply application and the discharge gas injection are terminated.

[0215] More specifically, the step S120_3 of forming a scattering layer on the light-emitting element layer of the manufacturing method S1 of the display device involved in this embodiment may include a step S121_3 of starting STT1 of applying a discharge power source and starting STT2 of injecting a discharge gas after a constant time has passed after the start STT3 of injecting a reaction gas, and a step S122_3 of ending END3 of injecting a reaction gas after a constant time has passed after the end END1 of applying the discharge power source and the end END2 of injecting a discharge gas.

[0216] like Fig. 22 and Fig.23 As shown, in step S120_3 of forming a scattering layer on the light emitting element layer in this embodiment, the scattering layer can be formed as described in reference Fig. 20 Similarly to step S120_2 of forming a scattering layer on a light emitting element layer according to another embodiment described above, after a constant time has passed since the start STT3 of the reaction gas injection, the start STT1 of the discharge power supply application and the start STT2 of the discharge gas injection are performed ( S121_3 ).

[0217] In contrast, in the step S120_3 of forming a scattering layer on the light emitting element layer in the present embodiment, different from the reference Fig. 20 In the step S120_2 of forming a scattering layer on the light emitting element layer according to another embodiment described above, the reaction gas injection may be terminated END3 ( S122_3 ) after a predetermined time has passed since the discharge power supply application is terminated END1 and the discharge gas injection is terminated END2 .

[0218] According to the manufacturing method S1 of the display device involved in the present embodiment, when the end END3 of the reaction gas injection is performed after a constant time has passed after the end END1 of the discharge power supply application and the end END2 of the discharge gas injection, the amount of the reaction gas RG that cannot fully absorb the discharge energy and is not completely dissociated can be increased. That is, the amount of the fragmented precursor FRG that is not completely dissociated and cannot become the free radicals RDC1 and RDC2 can be increased. As a result, the number and size of the scattering particles AGL formed by the aggregation of the polymer PLM and the fragmented precursor FRG can be increased. Therefore, the degree to which the light L1 emitted from the light-emitting layer LEL is scattered by the scattering layer SCT can be further increased, and the amount of the guided light reaching the color conversion substrate 200 can be increased, so that the light efficiency of the display device 1 can be improved.

[0219] Fig.24 It is a flowchart showing a method for manufacturing a display device according to another embodiment. Fig.25 It is a sequence diagram showing step S220 involved in one embodiment. Fig.26 It is a conceptual diagram for explaining step S220 involved in one embodiment. Fig. 27 This is a conceptual diagram for explaining step S220_1 which is a variation of step S220 according to another embodiment. Fig.28 is a cross-sectional view showing an example of a display device manufactured according to a method for manufacturing a display device according to another embodiment, taken along Figure 6 and Figure 7 A cross-sectional view of the display device taken along line X2-X2′.

[0220] Reference Figures 24 to 28 The manufacturing method S2 of the display device according to other embodiments is similar to that of the reference Fig.11 The difference of the manufacturing method S1 of the display device according to the embodiment described above is that the step of forming a scattering layer is not included.

[0221] More specifically, the manufacturing method S2 of the display device involved in other embodiments may include a step S210 of forming a first substrate, a circuit layer and a light-emitting element layer, a step S220 of forming a first inorganic film on the light-emitting element layer, a step S230 of forming an organic film on the first inorganic film, and a step S240 of forming a second inorganic film on the organic film.

[0222] The step S210 of forming the first substrate, circuit layer and light-emitting element layer in the manufacturing method S2 of the display device involved in this embodiment is the same as the step S110 of forming the first substrate, circuit layer and light-emitting element layer in the manufacturing method S1 of the display device involved in one embodiment, so the detailed description is omitted.

[0223] Similarly, step S230 of forming an organic film on the first inorganic film in the method S2 for manufacturing a display device according to this embodiment is the same as step S140 of forming an organic film on the first inorganic film in the method S1 for manufacturing a display device according to one embodiment, and thus detailed description is omitted.

[0224] In the manufacturing method S2 of the display device involved in this embodiment, step S220 of forming a first inorganic film on the light-emitting element layer and step S240 of forming a second inorganic film on the organic film can be performed by the same process. Therefore, for the sake of convenience, the following mainly describes step S220 of forming the first inorganic film on the light-emitting element layer.

[0225] In the step S220 of forming the first inorganic film on the light emitting element layer, the first inorganic film 171 may be formed on the light emitting element layer EML. The first inorganic film 171 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y )wait.

[0226] like Fig.25 As shown, step S220 of forming a first inorganic film on the light-emitting element layer may include step S221 of ending reaction gas injection END3 after a constant time has passed since start of reaction gas injection STT3, step S222 of starting discharge power application STT1 and starting discharge gas injection STT2 simultaneously with or after a constant time has passed since end of reaction gas injection END3, and step S223 of ending discharge power application END1 and ending discharge gas injection END2 after a constant time has passed since start of discharge power application STT1 and start of discharge gas injection STT2.

[0227] In one embodiment, if Fig.26 As shown, after the injection of the reaction gas RG is started and a constant time has passed, the injection of the reaction gas RG can be terminated. At the same time as the injection of the reaction gas RG is terminated, the injection of the discharge gas CG and the application of the discharge power can be started. If a constant time has passed, the injection of the discharge gas CG and the application of the discharge power can also be terminated.

[0228] In other embodiments, Fig. 27 As shown, the injection of the discharge gas CG and the application of the discharge power may be started simultaneously after a certain time has passed since the injection of the reaction gas RG was completed.

[0229] The injection of the discharge gas CG and the application of the discharge power supply are started at the same time as the injection of the reaction gas RG is completed or after a certain time has passed, so that the injection process of the reaction gas RG and the discharge process can be performed at different times.

[0230] Therefore, the reaction gas RG that does not receive the discharge energy can be disposed on the surface of the first substrate 110 as it is without any phase change by intermolecular attraction such as Van der Waals force. Intermolecular attraction such as Van der Waals force is a relatively weak force compared to chemical bonding, and the reaction gas RG can be disposed on the surface of the first substrate 110 in a thin layer at the level of several molecular layers or several atomic layers.

[0231] Then, if the discharge gas CG is injected and the discharge power is applied, the reaction gas RG placed on the surface of the first substrate 110 can be temporarily completely dissociated into free radicals RDC1 and RDC2 to react with each other. x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) etc., a thin and high-density first inorganic film 171.

[0232] According to the manufacturing method S2 of the display device involved in this embodiment, a thin and high-density first inorganic film 171 can be formed compared with the first inorganic film 171 formed by the plasma chemical vapor deposition process in the prior art. As the first inorganic film 171 has a large density, the encapsulation performance will be excellent, and as the thickness of the first inorganic film 171 becomes thinner, the light efficiency of the display device 1 can be improved.

[0233] Although the manufacturing method S2 of the display device according to the present embodiment and the reference Fig.11 The manufacturing method S1 of the display device according to the embodiment described in the above description, however, the manufacturing method S2 of the display device according to the present embodiment can also be applied to manufacturing the display device according to the above reference. Figure 8 In the process of the display device 1 according to one embodiment described in the examples. For example, Fig.11 The manufacturing method S1 of the display device according to the embodiment described in the above description is formed by referring to Figure 8 After the scattering layer SCT of the display device 1 according to the embodiment described above is formed, a first inorganic film 171 is formed on the scattering layer SCT according to the manufacturing method S2 of the display device according to the embodiment. Figure 8 The scattering layer SCT can also be formed Fig.28 The first inorganic film 171 is formed.

[0234] Fig.28 The display device 1 is similar to the one previously described Figure 8 The display device 1 according to the embodiment described herein is different only in that it does not include a scattering layer SCT, and thus a detailed description thereof will be omitted.

[0235] The embodiments of the present invention are described above with reference to the accompanying drawings, but those skilled in the art should be able to understand that the present invention can be implemented in other specific forms without changing the technical concept or essential features of the present invention. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and are not restrictive.

Claims

1. A display device, It is characterized in that include: a first substrate; A circuit layer, disposed on the first substrate; A light emitting element layer, arranged on the circuit layer; as well as a packaging structure, arranged on the light-emitting element layer, comprising a scattering layer, a first inorganic film arranged on the scattering layer, an organic film arranged on the first inorganic film, and a second organic film arranged on the organic film, The scattering layer includes a plurality of concavo-convexities.

2. The display device according to claim 1, It is characterized in that The plurality of concavo-convex portions include first particles and second particles, The concave and convex portions adjacent to each other among the plurality of concave and convex portions are in direct contact with each other.

3. The display device according to claim 1, It is characterized in that The sizes of the plurality of concavo-convexities are the same as or different from each other.

4. The display device according to claim 1, It is characterized in that The plurality of concavo-convex portions are arranged at regular intervals or at irregular intervals.

5. The display device according to claim 1, It is characterized in that The thickness of the scattering layer is 0.3 to 0.75 times the thickness of the first inorganic film.

6. The display device according to claim 5, It is characterized in that The thickness of the scattering layer is 0.3 μm to 0.5 μm.

7. The display device according to claim 5, It is characterized in that The plurality of concavo-convex portions are hemispherical in shape.

8. The display device according to claim 7, It is characterized in that The average radius of each of the plurality of concavoconvexities is 0.15 μm to 0.25 μm.

9. The display device according to claim 1, It is characterized in that Also includes: A second substrate, opposite to the first substrate, defining a first light-transmitting area, a second light-transmitting area and a third light-transmitting area; A first color filter is disposed on the second substrate and overlaps the first light-transmitting area; A second color filter is disposed on the second substrate and overlaps the second light-transmitting area; A third color filter is disposed on the second substrate and overlaps the third light-transmitting area; A first wavelength conversion layer, disposed on the first color filter; a second wavelength conversion layer, disposed on the second color filter; as well as a light-transmitting layer, arranged on the third color filter, The scattering layer is disposed between the first wavelength conversion layer, the second wavelength conversion layer, the light-transmitting layer, and the light-emitting element layer.

10. The display device according to claim 1, It is characterized in that The scattering layer is in direct contact with the first inorganic film.

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