Silicon wafer winding and expanding device and diffusion furnace
By simultaneously feeding diffusion reaction gas from above and below in the silicon wafer winding device, the uneven winding and plating problem caused by double insertion of silicon wafers is solved, the photoelectric efficiency and cleaning difficulty of TOPCon batteries are improved, and the electrical efficiency is improved.
Patent Information
- Application Number
- CN202420227806.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-30
- Publication Date
- 2024-12-17
- Estimated Expiration
- 2034-01-30
AI Technical Summary
In the process of producing TOPCon batteries, the gap caused by the dual plugging of silicon wafers leads to uneven winding, resulting in problems such as parasitic absorption of carriers, battery leakage and reduced electrical efficiency.
Design a silicon wafer winding device, by arranging the air inlet pipes above and below the double-insert silicon wafer in the quartz boat slot, diffusion reaction gas is sent at the same time from above and below the silicon wafer to increase the contact surface between the silicon wafer and the gas , achieve uniform coating.
A uniform coating on the back of the silicon wafer is achieved, optoelectronic efficiency is improved, and subsequent cleaning difficulties and reduced electrical efficiency are reduced.
Smart Images
Figure CN222182554U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of solar cells, and in particular relates to a silicon wafer winding and expanding device and a diffusion furnace with the silicon wafer winding and expanding device. Background Art
[0002] In the process of producing TOPCon cells, the preparation of the tunnel passivation layer is crucial. The tunnel passivation layer includes an ultra-thin oxide layer and a doped polysilicon layer. At present, the industry prepares the polysilicon layer by double-inserting silicon wafers in a quartz boat, that is, placing two silicon wafers face to face in a slot to increase its production capacity. Since there is inevitably a gap between the two double-inserted silicon wafers, this leads to the occurrence of wrap-around plating, and the silicon wafers formed by wrap-around plating are generally thin in the middle and thick at the edges. After wrap-around plating is formed on the back of the silicon wafer, it will cause parasitic absorption of carriers and the generation of battery leakage, so it is necessary to increase the wet chemical process, but the uneven wrap-around plating makes wet chemical cleaning more difficult, and local over-engraving often occurs, resulting in a decrease in the electrical efficiency of the silicon wafer. Utility Model Content
[0003] The embodiment of the utility model provides a silicon wafer winding and expansion device and a diffusion furnace, aiming to solve the problem of uneven winding and plating on the back side of the silicon wafer.
[0004] In the first aspect, in order to achieve the above-mentioned purpose, the technical solution adopted by the utility model is: to provide a silicon wafer winding and expansion device, including: a quartz boat and an air intake system, wherein two silicon wafers are inserted into the card slots of the quartz boat; the air intake system includes an air intake main pipe and a first air intake pipe and a second air intake pipe connected in parallel to the air intake main pipe, the first air intake pipe is arranged under the quartz boat; the first air intake pipe is provided with a first air guide pipe extending into the quartz boat; the second air intake pipe is arranged above the silicon wafer; the second air intake pipe is provided with an air intake hole.
[0005] In the first aspect, in an achievable manner, second air ducts are respectively arranged on the second air inlet pipe corresponding to the card slots, and the pipe openings of the second air ducts correspond to between the two double-inserted silicon wafers; the first air duct extends upward into the card slot; wherein the first air duct and the second air duct are arranged alternately.
[0006] In a first aspect, in one achievable manner, the second air guide tube is a flat tube.
[0007] In a first aspect, in an achievable manner, a width of an opening of the second air duct is less than 2.5 mm.
[0008] In a first aspect, in one achievable manner, the opening of the second air duct is flush with the upper end of the silicon wafer.
[0009] In a first aspect, in one achievable manner, the second air guide pipe is threadedly connected to the second air inlet pipe.
[0010] In a first aspect, in an achievable manner, one end of the first air guide tube extending into the slot is flush with the bottom of the slot.
[0011] In a first aspect, in one practicable manner, a solenoid valve is provided on the intake manifold.
[0012] In a second aspect, the utility model further provides a diffusion furnace, comprising the silicon wafer winding and expansion device.
[0013] Compared with the prior art, the silicon wafer winding and expansion device and diffusion furnace provided by the utility model have the following beneficial effects: air inlet pipes are arranged simultaneously above and below the double-inserted silicon wafer, and diffusion reaction gas is sent into between the silicon wafers from above and below the silicon wafer at the same time, thereby expanding the contact surface between the silicon wafer and the reaction gas, so that the diffusion reaction gas can be more evenly filled between the silicon wafers, thereby achieving uniform coating on the front and back sides of the silicon wafer, improving the photoelectric efficiency of the silicon wafer, improving the problem of thin middle and thick edges caused by silicon wafer winding and plating, and reducing the difficulty of subsequent cleaning and the problem of reduced electrical efficiency of the silicon wafer due to over-cleaning. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 A schematic diagram of the structure of a silicon wafer winding and expansion device provided in an embodiment of the utility model;
[0015] Description of reference numerals:
[0016] 1. Furnace body; 2. Air intake main pipe; 3. First air guide pipe; 4. First air intake pipe; 5. Quartz boat; 6. Silicon wafer; 7. Second air guide pipe; 8. Second air intake pipe. DETAILED DESCRIPTION
[0017] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.
[0018] See also Figure 1 The silicon wafer winding and expanding device provided by the utility model is now described. The silicon wafer winding and expanding device comprises a quartz boat 5 and an air intake system, wherein two silicon wafers 6 are inserted into the card slot of the quartz boat 5; the air intake system comprises an air intake manifold 2 and a first air intake pipe 4 and a second air intake pipe 8 connected in parallel to the air intake manifold 2, wherein the first air intake pipe 4 is arranged below the quartz boat 5; the first air intake pipe 4 is provided with a first air guide pipe 3 extending into the quartz boat 5; the second air intake pipe 8 is arranged above the silicon wafer 6; and the second air intake pipe 8 is provided with an air intake hole.
[0019] Compared with the prior art, the silicon wafer winding and expansion device provided by the utility model has the following beneficial effects: air inlet pipes are arranged simultaneously above and below the dual-inserted silicon wafer 6, and the diffusion reaction gas is simultaneously sent into between the silicon wafers 6 from above and below the silicon wafer 6, thereby expanding the contact surface between the silicon wafer and the reaction gas, so that the diffusion reaction gas can be more evenly filled between the silicon wafers 6, thereby achieving uniform coating on the front and back sides of the silicon wafer 6, improving the photoelectric efficiency of the silicon wafer 6, and improving the problem of thin middle and thick edges caused by winding and plating of the silicon wafer 6, thereby reducing the difficulty of subsequent cleaning and the problem of reduced conversion efficiency of the silicon wafer 6 due to over-cleaning.
[0020] TOPCon is a solar cell technology with tunneling oxide passivation contact based on the principle of selective carriers. Its cell structure is an N-type silicon substrate cell. An ultra-thin layer of silicon oxide is prepared on the back, and then a thin layer of doped silicon is deposited. The two together form a passivation contact structure, which effectively reduces surface recombination and metal contact recombination, and provides greater room for further improving the conversion efficiency of N-PERT cells.
[0021] In some embodiments, see Figure 1 As shown, second air ducts 7 are respectively arranged on the second air inlet pipe 8 corresponding to the card slots, and the pipe openings of the second air ducts 7 correspond to between the two double-inserted silicon wafers 6; the first air duct 3 extends upward into the card slot; wherein the first air duct 3 and the second air duct 7 are arranged alternately.
[0022] The silicon wafer is coated with LPCVD coating equipment, including a diffusion furnace, a quartz boat, an air intake system, and an exhaust system. When depositing polysilicon, the temperature control system first raises the temperature to 600°C and introduces the reaction gas silane. Silane is decomposed into silicon and hydrogen by heat, and silicon alone is deposited on the silicon wafer 6 to form a polysilicon film. The second air duct 7 of the present application is placed in the gap between the two silicon wafers 6. The distance between the two adjacent teeth of the double-inserted quartz boat 5 is 5.44mm. The thickness of the silicon wafer 6 is 1.3mm. The gap between the two silicon wafers 6 can be about 2.5mm, which can realize the placement of the second air duct 7. Among them, a card groove is formed between two adjacent teeth.
[0023] In some embodiments, see Figure 1 As shown, the second air guide tube 7 is a flat tube (the flat structure is not shown in the figure). The second air guide tube 7 is a flat tube, so that the tube mouth of the flat tube fits the gap between the silicon wafers 6, which can increase the flow rate of gas directly entering between the silicon wafers 6 and improve the uniformity of the coating on the silicon wafers 6.
[0024] In some embodiments, see Figure 1 As shown, the width of the opening of the second air guide pipe 7 is less than 2.5 mm to ensure that the diffusion reaction gas enters between the silicon wafers 6.
[0025] In some embodiments, see Figure 1As shown, the opening of the second gas guide pipe 7 is flush with the upper end of the silicon wafer 6 to ensure that the diffusion reaction gas enters between the silicon wafers 6.
[0026] In some embodiments, see Figure 1 As shown, the second air guide pipe 7 is screwed onto the second air inlet pipe 8 to facilitate manufacturing, installation and disassembly.
[0027] In some embodiments, see Figure 1 As shown, one end of the first gas guide pipe 3 extending into the slot is flush with the bottom of the slot to ensure that the diffusion reaction gas enters between the silicon wafers 6.
[0028] In some embodiments, see Figure 1 As shown, a solenoid valve is provided on the intake manifold 2 (the solenoid valve is not shown in the figure).
[0029] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
[0030] Based on the same inventive concept, the embodiment of the present application further provides a diffusion furnace, comprising a furnace body 1 and the silicon wafer winding and expansion device. An exhaust pipe is arranged below the quartz boat 5 in the furnace body 1.
[0031] The diffusion furnace provided by the utility model arranges air inlet pipes above and below the double-inserted silicon wafer 6 at the same time, and the diffusion reaction gas is sent into between the silicon wafers 6 from above and below the silicon wafer 6 at the same time, so that the diffusion reaction gas can be more evenly filled between the silicon wafers 6, thereby achieving uniform coating on the front and back sides of the silicon wafer 6, improving the photoelectric efficiency of the silicon wafer 6, and improving the problem of thin middle and thick edges caused by winding plating of the silicon wafer 6, reducing the difficulty of subsequent cleaning and the problem of reduced battery conversion efficiency due to over-cleaning.
[0032] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. A silicon wafer winding and expansion device, characterized in that: include: A quartz boat (5), wherein two silicon wafers (6) are inserted into the card slots of the quartz boat (5); as well as An air intake system comprises an air intake manifold (2), a first air intake pipe (4) and a second air intake pipe (8) connected in parallel to the air intake manifold (2), wherein the first air intake pipe (4) is arranged below the quartz boat (5); and a first air guide pipe (3) extending into the quartz boat (5) is provided on the first air intake pipe (4); The second air inlet pipe (8) is arranged above the silicon chip (6); an air inlet hole is provided on the second air inlet pipe (8).
2. The silicon wafer wrapping device according to claim 1, wherein: The second air inlet pipe (8) is provided with a second air guide pipe (7) corresponding to the card slot, and the pipe opening of the second air guide pipe (7) corresponds to between the two double-inserted silicon chips (6); the first air guide pipe (3) extends upward into the card slot; wherein the first air guide pipe (3) and the second air guide pipe (7) are arranged alternately.
3. The silicon wafer wrapping and expanding device according to claim 2, wherein: The second air guide tube (7) is a flat tube.
4. The silicon wafer wrapping and expanding device according to claim 3, wherein: The width of the opening of the second air guide tube (7) is less than 2.5 mm.
5. The silicon wafer wrapping and expanding device according to claim 2, wherein: The opening of the second air guide pipe (7) is flush with the upper end of the silicon wafer (6).
6. The silicon wafer wrapping and expanding device according to claim 2, wherein: The second air guide pipe (7) is screwed onto the second air inlet pipe (8).
7. The silicon wafer wrapping and expanding device according to claim 1, wherein: One end of the first air guide tube (3) extending into the slot is flush with the bottom of the slot.
8. The silicon wafer wrapping and expanding device according to claim 1, wherein: The air intake manifold (2) is provided with a solenoid valve.
9. A diffusion furnace, characterized in that: It comprises the silicon wafer wrapping and expanding device as described in any one of claims 1-8.