Sealed wafer processing chamber for wafer laser processing

Abstract

The utility model discloses a sealed wafer processing chamber for wafer laser processing. The sealed wafer processing chamber comprises a cavity, a heating plate, a ceramic suction cup, a light blocking ring, a light-transmitting glass plate and an exhaust pipe, the cavity is provided with a cavity body, an inflation inlet is formed in the outer side of the cavity and connected with a nitrogen source, a feeding inlet capable of being opened and closed is formed in the front side of the cavity, and the upper end of the cavity is open. The heating plate is arranged in the cavity; the ceramic sucking disc is mounted above the heating disc; the light blocking ring covers the ceramic suction cup, and a light hole is also formed in the middle of the light blocking ring; the light-transmitting glass plate covers the upper end of the cavity; the exhaust pipe is connected to the side wall of the cavity, the exhaust pipe is communicated with the cavity, the exhaust pipe is provided with a pressure relief valve, a pressure probe is arranged at the exhaust pipe, and the pressure probe is electrically connected with the pressure relief valve. Nitrogen is continuously inflated through the inflation inlet, the pressure of the cavity is monitored and controlled in real time through the pressure probe, it is guaranteed that the wafer is machined in inert gas under the stable air pressure, and the machining yield of the wafer is increased.

Description

Technical Field

[0001] The utility model relates to the field of wafer processing equipment, in particular to a sealed wafer processing chamber for wafer laser processing. Background Art

[0002] In order to reduce the fragmentation rate, increase WPH, and improve material properties, wafer laser annealing, laser marking, laser induction, laser scribing and other equipment all have the need for early heating and later cooling. In order to perform the heating and cooling processes, existing equipment generally separates heating equipment and cooling equipment, and uses a robotic arm to take and place the wafer. This equipment structure occupies a large area, and because the robotic arm needs to swing in too many areas, the transfer time and transfer conditions of the robotic arm cannot be stably controlled.

[0003] To this end, the invention patent with application number 201711161227.4 discloses a semiconductor equipment heating and cooling composite disk device. It includes a hot disk heating zone, a composite disk frame, a cooling disk, a cooling zone lifting mechanism, a cooling disk conveying mechanism, a hot disk zone lifting mechanism and a cooling disk area, wherein the hot disk heating zone and the cooling disk area are arranged in the composite disk frame, the hot disk area lifting mechanism is arranged in the hot disk heating zone, the cooling zone lifting mechanism and the cooling disk conveying mechanism are both arranged in the cooling disk area, the cooling disk is arranged on the cooling disk conveying mechanism, the cooling disk conveying mechanism is used to transfer the cooling disk between the cooling disk area and the hot disk heating zone, and the cooling zone lifting mechanism is used to receive the wafer. This scheme can be used to achieve heating-assisted processing of the wafer, but the air pressure at the hot disk heating zone in this scheme will change with the increase in temperature, resulting in unstable air pressure in the wafer processing link, reducing the processing yield. Utility Model Content

[0004] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides a sealed wafer processing chamber for wafer laser processing, which can ensure that the wafer is processed under a stable gas pressure and in an inert gas, thereby improving the processing yield of the wafer.

[0005] According to the first aspect of the utility model, a sealed wafer processing chamber for wafer laser processing includes a chamber, a heating plate, a ceramic suction cup, a light-blocking ring, a light-transmitting glass plate and an exhaust pipe; the chamber is provided with a cavity, an air charging port is provided on the outside of the chamber, the air charging port is connected to a nitrogen gas source, an openable and closable feed port is provided on the front side of the chamber, and the upper end of the chamber is open; the heating plate is built into the cavity; the ceramic suction cup is installed above the heating plate and is attached to the surface of the heating plate; the light-blocking ring can be raised and lowered; the heating plate is installed in ...; the light-blocking ring can be raised and lowered; the heating plate is installed in the cavity; the ceramic suction cup is installed above the heating plate; the light-blocking ring can be raised and lowered; the heating plate is installed in the cavity; the ceramic suction cup is installed above the heating plate; the light-blocking ring can be raised The lower part covers the top of the ceramic suction cup, and a light-transmitting hole is also set in the middle of the light-blocking ring; the light-transmitting glass plate covers the upper end of the chamber to seal the cavity, and the light-transmitting glass plate is located above the light-blocking ring and is spaced apart from the light-blocking ring; the exhaust pipe is connected to the side wall of the chamber, the exhaust pipe is connected to the cavity, the exhaust pipe is provided with a pressure relief valve, and a pressure probe is provided at the exhaust pipe, and the pressure probe is electrically connected to the pressure relief valve to control the opening amplitude of the pressure relief valve.

[0006] The sealed wafer processing chamber for wafer laser processing according to the embodiment of the utility model has at least the following beneficial effects: nitrogen is continuously filled through the gas filling port, and the internal pressure is monitored in real time by a pressure probe to control the flow rate at the pressure relief valve, thereby ensuring that the wafer is processed in an inert gas under a stable gas pressure, thereby improving the processing yield of the wafer.

[0007] According to some embodiments of the utility model, the chamber is provided with a plurality of first lifting mechanisms and a plurality of second lifting mechanisms. The first lifting mechanisms are installed in the chamber in a liftable manner and are used to lift the light blocking ring. The side wall of the heating plate is provided with a plurality of grooves. The second lifting mechanisms are built into the grooves and can be lifted and lowered in the grooves.

[0008] According to some embodiments of the utility model, the first lifting mechanism includes a first lifting rod and a clamping block, the outer edge of the light blocking ring is provided with a plurality of through holes, the end of the first lifting rod is provided with a clamping groove, the end of the first lifting rod abuts against the lower surface of the light blocking ring, the clamping block is partially passed through the through hole and clamped with the clamping groove, and the clamping block is partially abutted against the upper surface of the light blocking ring.

[0009] According to some embodiments of the utility model, the second lifting mechanism includes a second lifting rod and a support block, the support block and the upper end of the second lifting rod are fixedly connected, the second lifting rod is partially embedded in the groove, and the second lifting rod can be raised and lowered so that the support block is embedded in the groove or moved out of the groove.

[0010] According to some embodiments of the utility model, the first lifting mechanism includes a first lifting rod and a clamping block, and the clamping block is detachably connected to the top end of the first lifting rod. The second lifting mechanism includes a second lifting rod and a supporting block, and the supporting block is fixedly connected to the top end of the second lifting rod. The lower ends of the first lifting rod and the second lifting rod are both provided with cooling devices.

[0011] According to some embodiments of the utility model, the cooling device includes a cooling shell, a water inlet joint and a water outlet joint, the cooling shell is penetrated with a through hole from top to bottom, the first lifting rod or the second lifting rod is inserted into the through hole, a cooling water chamber is provided inside the cooling shell, the cooling water chamber wraps the through hole, the water inlet joint and the water outlet joint are connected to the outside of the cooling shell, and are communicated with the cooling water chamber.

[0012] According to some embodiments of the present invention, the exhaust pipe is provided with a one-way valve.

[0013] According to some embodiments of the utility model, a partition is built into the cavity, the partition is provided with a mounting hole, the ceramic suction cup is built into the mounting hole, the partition divides the cavity into an upper cavity and a lower cavity, a plurality of micropores are provided on the inner side of the cavity, the micropores and the upper cavity are arranged correspondingly, a plurality of blowing holes are provided on the inner side of the cavity, the blowing holes and the lower cavity are arranged correspondingly, wherein the inflation port, the blowing holes and the micropores are all connected.

[0014] According to some embodiments of the present invention, the inner edge of the light-transmitting hole is serrated.

[0015] According to some embodiments of the utility model, the cavity is provided with a built-in heat insulation board, the heat insulation board is arranged between the heating plate and the bottom surface of the cavity, a cooling water channel is arranged inside the heat insulation board, and the side wall of the heat insulation board is provided with a water inlet and a water outlet connected to the cooling water channel.

[0016] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention is further described below with reference to the accompanying drawings and embodiments, wherein:

[0018] Figure 1 It is an exploded schematic diagram of a sealed wafer processing chamber for wafer laser processing according to an embodiment of the utility model;

[0019] Figure 2 A schematic diagram of a sealed wafer processing chamber (without an aperture ring and a light-transmitting glass plate) for wafer laser processing according to an embodiment of the utility model;

[0020] Figure 3 for Figure 2 An enlarged view of part A;

[0021] Figure 4 A schematic cross-sectional view of a sealed wafer processing chamber for wafer laser processing according to an embodiment of the utility model;

[0022] Figure 5 It is a schematic diagram of the assembly of the first lifting mechanism and the light blocking ring of the sealed wafer processing chamber for wafer laser processing according to an embodiment of the utility model;

[0023] Figure 6 It is a schematic diagram of the assembly of the cooling device and the first lifting rod of the sealed wafer processing chamber for wafer laser processing according to an embodiment of the utility model;

[0024] Figure 7 This is a schematic structural diagram of a heat insulation plate of a sealed wafer processing chamber for wafer laser processing according to an embodiment of the utility model.

[0025] 100, chamber; 110, cavity; 111, upper chamber; 112, lower chamber; 120, charging port; 130, feed port; 140, heat insulation board; 150, cooling water channel; 151, water inlet; 152, water outlet; 160, partition;

[0026] 200, heating plate;

[0027] 300, ceramic suction cup; 310, groove;

[0028] 400, aperture; 410, light-transmitting hole;

[0029] 500, light-transmitting glass plate;

[0030] 600, exhaust pipe; 610, pressure relief valve; 611, pressure probe; 620, check valve;

[0031] 700, first lifting mechanism; 710, first lifting rod; 711, card slot; 720, pressing block;

[0032] 800, second lifting mechanism; 810, second lifting rod; 820, supporting block;

[0033] 900, cooling device; 910, cooling shell; 911, cooling water chamber; 920, water inlet joint; 930, water outlet joint; DETAILED DESCRIPTION

[0034] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0035] In the description of the present invention, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0036] In the description of the present utility model, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0037] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0038] Reference Figures 1 to 7The sealed wafer processing chamber for wafer laser processing of the embodiment of the utility model comprises a chamber 100, a heating plate 200, a ceramic suction cup 300, a light-blocking ring 400, a light-transmitting glass plate 500 and an exhaust pipe 600; the chamber 100 is provided with a cavity 110, an air filling port 120 is provided on the outer side of the chamber 100, and the air filling port 120 is connected to a nitrogen gas source, an openable and closable feed port 130 is provided on the front side of the chamber 100, and the upper end of the chamber 100 is open; the heating plate 200 is built in the cavity 110; the ceramic suction cup 300 is installed above the heating plate 200 and is attached to the surface of the heating plate 200; the light-blocking ring 400 is provided on the outer side of the chamber 100, and the air-filling port 120 is connected to the nitrogen gas source; the front side of the chamber 100 is provided with an openable and closable feed port 13 ... 0 can be raised and lowered to cover the top of the ceramic suction cup 300, and a light-transmitting hole 410 is also set in the middle of the light-blocking ring 400; a light-transmitting glass plate 500 covers the upper end of the chamber 100 to seal the cavity 110, and the light-transmitting glass plate 500 is located above the light-blocking ring 400 and is spaced apart from the light-blocking ring 400; an exhaust pipe 600 is connected to the side wall of the chamber 100, the exhaust pipe 600 is communicated with the cavity 110, the exhaust pipe 600 is provided with a pressure relief valve 610, and a pressure probe 611 is provided at the exhaust pipe 600, and the pressure probe 611 is electrically connected to the pressure relief valve 610 to control the opening amplitude of the pressure relief valve 610.

[0039] In actual use, the following steps are performed:

[0040] 1. Turn on the heating plate 200 and preheat the cavity 110;

[0041] 2. Open the feed port 130, and place the wafer into the cavity 110 through the feed port 130 by a robot, and place it on the ceramic chuck 300;

[0042] 3. Use the vacuum suction force of the ceramic suction cup 300 to tightly adsorb the wafer;

[0043] 4. Exhaust the oxygen in the cavity 110 through the exhaust pipe 600;

[0044] 5. Inject nitrogen into the cavity 110 through the gas filling port 120 to fill the cavity 110 with inert gas;

[0045] 6. Laser processing of wafers;

[0046] 7. Remove the wafer after processing is completed.

[0047] In step 1, the cavity 110 needs to be preheated as a whole so that the temperature inside the cavity 110 reaches a preset value. In some embodiments, a temperature sensor may be built into the cavity 110 for real-time temperature measurement, or a temperature sensor with a control function may be electrically connected to the heating plate 200 to control the heating power of the heating plate 200 according to the real-time temperature.

[0048] In step 3, a negative pressure port is provided on the outer edge of the ceramic suction cup 300, an adsorption port is provided on the surface of the ceramic suction cup 300, a negative pressure airflow channel is provided between the adsorption port and the negative pressure port, and the negative pressure port is connected to a negative pressure generator through a pipeline. By starting the negative pressure generator, negative pressure is formed inside the negative pressure airflow channel, and the wafer covered on the ceramic suction cup 300 is adsorbed to prevent the wafer from shifting and shaking.

[0049] In the above step 5, during the process of filling with nitrogen, the pressure relief valve 610 of the exhaust pipe 600 is synchronously started to exhaust the oxygen in the cavity 110 as completely as possible. Specifically, during the process of exhausting oxygen, some nitrogen is still exhausted. This method can be used to control the air pressure in the cavity 110 to ensure that processing can be carried out under stable air pressure. Specifically, the laser of the external processing equipment (not shown in the figure) can pass through the transparent glass plate 500 directly to the wafer surface and process the wafer.

[0050] In summary, nitrogen is continuously filled through the filling port 120, and the internal pressure is monitored in real time through the pressure probe 611 to control the flow rate at the pressure relief valve 610, ensuring that the wafer is processed in an inert gas under a stable gas pressure, thereby improving the processing yield of the wafer.

[0051] In some embodiments, the chamber 100 is built with a plurality of first lifting mechanisms 700 and a plurality of second lifting mechanisms 800. The first lifting mechanism 700 is installed in the chamber 100 in a manner that it can be raised and lowered, and is used to lift the light-blocking ring 400. The side wall of the heating plate 200 is provided with a plurality of grooves 310. The second lifting mechanism 800 is built in the grooves 310 and can be raised and lowered in the grooves 310. The first lifting mechanism 700 and the second lifting mechanism 800 do not interfere with each other. When performing the above step 7, the light-blocking ring 400 is first lifted by the first lifting mechanism 700 so that the wafer has a lifting space, and then the wafer is lifted by the second lifting mechanism, so that the robot can easily clamp the wafer.

[0052] Specifically, the first lifting mechanism 700 includes a first lifting rod 710 and a clamping block 720. The outer edge of the light-blocking ring 400 is provided with a plurality of through holes. The end of the first lifting rod 710 is provided with a clamping slot 711. The end of the first lifting rod 710 abuts against the lower surface of the light-blocking ring 400. The clamping block 720 is partially inserted into the through hole and clamped with the clamping slot 711. The clamping block 720 abuts against the upper surface of the light-blocking ring 400. By clamping the clamping block 720 and the end of the first lifting rod 710, the light-blocking ring 400 is lifted from multiple positions.

[0053] On the other hand, the second lifting mechanism 800 includes a second lifting rod 810 and a support block 820. The support block 820 is fixedly connected to the upper end of the second lifting rod 810. The second lifting rod 810 is partially built into the groove 310. The second lifting rod 810 can be raised and lowered so that the support block 820 is built into the groove 310 or moved out of the groove 310. The support block 820 located in the groove 310 can be located below the wafer. When the second lifting rod 810 rises, it can contact the wafer from the bottom of the wafer and lift the wafer. Multiple support blocks 820 cooperate to lift the entire wafer, making it convenient for the robot to take out the wafer from the feed port 130.

[0054] In this embodiment, since the first lifting rod 710 and the second lifting rod 810 are lifted and lowered in the cavity 110, the entire first lifting rod 710 and the second lifting rod 810 will be heated. In order to ensure the strength of the first lifting rod 710 and the second lifting rod 810, the lower ends of the first lifting rod 710 and the second lifting rod 810 are provided with cooling devices 900 to achieve cooling of the first lifting rod 710 and the second lifting rod 810. Preferably, the cooling device 900 includes a cooling shell 910, a water inlet joint 920 and a water outlet joint 930. The cooling shell 910 is penetrated with a through hole from top to bottom. The first lifting rod 710 or the second lifting rod 810 is inserted into the through hole. A cooling water chamber 911 is provided inside the cooling shell 910. The cooling water chamber 911 wraps the through hole. The water inlet joint 920 and the water outlet joint 930 are connected to the outside of the cooling shell 910 and communicate with the cooling water chamber 911. By injecting cooling water into the water inlet joint 920 and filling the cooling water chamber 911 with cooling water, the first lifting rod 710 and the second lifting rod 810 are cooled, and the heated water is discharged from the water outlet joint 930 .

[0055] Furthermore, the exhaust pipe 600 is provided with a one-way valve 620. The one-way valve 620 can ensure that the airflow does not flow back.

[0056] The cavity 110 is built with a partition 160, and the partition 160 is provided with a mounting hole, and the ceramic suction cup 300 is built in the mounting hole. The partition 160 divides the cavity 110 into an upper cavity 111 and a lower cavity 112. The inner side of the cavity 110 is provided with a plurality of micropores, and the micropores and the upper cavity 111 are arranged correspondingly. The inner side of the cavity 110 is provided with a plurality of blowing holes, and the blowing holes and the lower cavity 112 are arranged correspondingly, wherein the inflation port 120 and the blowing holes and the micropores are all connected. Specifically, the diameter of the micropore is smaller than the blowing hole, and the nitrogen blown out of the blowing hole can cool the first lifting rod 710 and the second lifting rod 810 in the lower cavity 112, and the nitrogen sprayed from the micropore will be in a mist form, which improves the uniformity of the nitrogen blown into the upper cavity 111 and avoids affecting the temperature of the wafer surface.

[0057] In addition, in order to prevent the laser from diffracting at the edge, the inner edge of the light-transmitting hole 410 is serrated.

[0058] It should be mentioned that the cavity 110 is built with a heat insulation board 140, which is arranged between the heating plate 200 and the bottom surface of the cavity 110, and a cooling water channel 150 is arranged inside the heat insulation board 140. The side wall of the heat insulation board 140 is provided with a water inlet 151 and a water outlet 152 connected to the cooling water channel 150. Cooling water is injected into the cooling water channel 150, so that the heat insulation board 140 keeps cooling the bottom surface of the cavity 110 to prevent the high temperature from damaging the chamber 100.

[0059] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the relevant technical field without departing from the purpose of the present invention.

Claims

1. A sealed wafer processing chamber for wafer laser processing, characterized in that: It comprises a chamber (100), a heating plate (200), a ceramic suction cup (300), a light-blocking ring (400), a light-transmitting glass plate (500) and an exhaust pipe (600); The chamber (100) is provided with a cavity (110), an air filling port (120) is provided on the outside of the chamber (100), the air filling port (120) is connected to a nitrogen gas source, an openable and closable feed port (130) is provided on the front side of the chamber (100), and the upper end of the chamber (100) is open; The heating plate (200) is built into the cavity (110); The ceramic suction cup (300) is installed above the heating plate (200) and adheres to the surface of the heating plate (200); The light blocking ring (400) can be raised and lowered to cover the ceramic suction cup (300), and a light-transmitting hole (410) is also provided in the middle of the light blocking ring (400); The light-transmitting glass plate (500) covers the upper end of the chamber (100) so as to seal the cavity (110); the light-transmitting glass plate (500) is located above the light-blocking ring (400) and is spaced apart from the light-blocking ring (400); The exhaust pipe (600) is connected to the side wall of the chamber (100), the exhaust pipe (600) is communicated with the cavity (110), the exhaust pipe (600) is provided with a pressure relief valve (610), the exhaust pipe (600) is provided with a pressure probe (611), and the pressure probe (611) and the pressure relief valve (610) are electrically connected to control the opening amplitude of the pressure relief valve (610).

2. The sealed wafer processing chamber for wafer laser processing according to claim 1, characterized in that: The chamber (100) is equipped with a plurality of first lifting mechanisms (700) and a plurality of second lifting mechanisms (800); the first lifting mechanisms (700) are installed in the chamber (100) in a liftable manner and are used to lift the light blocking ring (400); the side wall of the heating plate (200) is provided with a plurality of grooves (310); the second lifting mechanisms (800) are built into the grooves (310) and can be lifted and lowered in the grooves (310).

3. The sealed wafer processing chamber for wafer laser processing according to claim 2, characterized in that: The first lifting mechanism (700) includes a first lifting rod (710) and a clamping block (720); a plurality of through holes are provided on the outer edge of the light blocking ring (400); a clamping groove (711) is provided at the end of the first lifting rod (710); the end of the first lifting rod (710) abuts against the lower surface of the light blocking ring (400); a portion of the clamping block (720) is passed through the through hole and clamped with the clamping groove (711); a portion of the clamping block (720) abuts against the upper surface of the light blocking ring (400).

4. The sealed wafer processing chamber for wafer laser processing according to claim 2, characterized in that: The second lifting mechanism (800) includes a second lifting rod (810) and a support block (820), wherein the support block (820) and the upper end of the second lifting rod (810) are fixedly connected, and the second lifting rod (810) is partially embedded in the groove (310). The second lifting rod (810) can be raised and lowered so that the support block (820) is embedded in the groove (310) or moved out of the groove (310).

5. The sealed wafer processing chamber for wafer laser processing according to claim 2, 3 or 4, characterized in that: The first lifting mechanism (700) includes a first lifting rod (710) and a pressing block (720), wherein the pressing block (720) is detachably connected to the top end of the first lifting rod (710), and the second lifting mechanism (800) includes a second lifting rod (810) and a supporting block (820), wherein the supporting block (820) is fixedly connected to the top end of the second lifting rod (810), and the lower ends of the first lifting rod (710) and the second lifting rod (810) are both provided with cooling devices (900).

6. The sealed wafer processing chamber for wafer laser processing according to claim 5, characterized in that: The cooling device (900) comprises a cooling shell (910), a water inlet joint (920) and a water outlet joint (930); the cooling shell (910) is provided with a through hole from top to bottom; the first lifting rod (710) or the second lifting rod (810) is inserted into the through hole; a cooling water chamber (911) is provided inside the cooling shell (910); the cooling water chamber (911) wraps the through hole; the water inlet joint (920) and the water outlet joint (930) are connected to the outside of the cooling shell (910) and communicate with the cooling water chamber (911).

7. The sealed wafer processing chamber for wafer laser processing according to claim 1, characterized in that: The exhaust pipe (600) is provided with a one-way valve (620).

8. The sealed wafer processing chamber for wafer laser processing according to claim 1, characterized in that: The cavity (110) is provided with a partition (160), the partition (160) is provided with a mounting hole, the ceramic suction cup (300) is built into the mounting hole, the partition (160) divides the cavity (110) into an upper cavity (111) and a lower cavity (112), a plurality of micropores are provided on the inner side of the cavity (110), the micropores and the upper cavity (111) are provided correspondingly, a plurality of blowing holes are provided on the inner side of the cavity (110), the blowing holes and the lower cavity (112) are provided correspondingly, wherein the inflation port (120) is connected to the blowing holes and the micropores.

9. The sealed wafer processing chamber for wafer laser processing according to claim 1, characterized in that: The inner edge of the light-transmitting hole (410) is in a sawtooth shape.

10. The sealed wafer processing chamber for wafer laser processing according to claim 1, characterized in that: The cavity (110) has a built-in heat insulation board (140), and the heat insulation board (140) is arranged between the heating plate (200) and the bottom surface of the cavity (110). A cooling water channel (150) is arranged inside the heat insulation board (140), and a water inlet (151) and a water outlet (152) connected to the cooling water channel (150) are arranged on the side wall of the heat insulation board (140).

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