Growth device with gallium recovery device

Abstract

The utility model provides a growing device with a gallium recovery device, which comprises a growing chamber and a gallium recovery device, and the growing chamber comprises a growing area and a recovery area; the gallium recovery device comprises a heat conduction reaction part and a containing vessel, the heat conduction reaction part comprises a fixing rod and fins, the fixing rod is connected to the growth cavity, the fins are connected to the fixing rod, and the fins are arranged at the front end of the fixing rod; and gallium-containing gas in the tail gas forms non-gaseous gallium under the action of the heat-conducting reaction piece. By arranging the heat conduction reaction part with the fins, the tail gas can make full contact with the heat conduction reaction part, then gallium-containing gas in the tail gas is changed into non-gaseous gallium through the heat conduction reaction part, gallium accumulation is achieved, and finally recycling is achieved through the containing vessel. By the adoption of the scheme, on one hand, aggregates formed by byproducts and metal gallium can be reduced, so that the possibility that filter screen holes of a subsequent recovery system are blocked is reduced, on the other hand, efficient recycling of gallium can be achieved, and resource waste is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, in particular to a growth device with a gallium recovery device. Background Art

[0002] Metal-organic Chemical Vapor Deposition (MOCVD) is one of the common methods for epitaxial growth of gallium nitride (GaN) at this stage. In this process, metal organic compounds such as Ga(CH 3 ) 3 (Trimethylgallium) and nitrogen (N 2 ) and hydrogen (H 2 ) react at high temperature to grow GaN thin films. However, this reaction process not only produces the target material GaN, but also other byproducts, such as ammonium chloride (NH 4 Cl), excess gallium chloride (GaCl 3 and GaCl) and incompletely reacted metallic gallium (Ga).

[0003] These byproducts and unreacted gallium metal remain in the growth chamber and are prone to form agglomerates. In the subsequent exhaust gas treatment and recovery stages, these agglomerates may clog the filter mesh in the exhaust gas recovery system, resulting in reduced system efficiency or even failure. In addition, since gallium is a relatively expensive material, gallium that is difficult to recycle often results in a waste of resources.

[0004] At present, although there are some waste gas treatment technologies, such as scrubbers and adsorbents, these methods often cannot effectively solve the problem of agglomerates and gallium recovery. Therefore, it is urgent to develop new technologies to achieve efficient gallium recovery. Utility Model Content

[0005] Therefore, the technical problem to be solved by the utility model is to overcome the problem in the prior art that gallium is difficult to recover and by-products are easy to agglomerate.

[0006] To solve the above technical problems, a growth chamber is provided, wherein the growth chamber comprises a growth area and a recovery area which are interconnected, wherein the growth area is provided with an air inlet pipe for introducing reaction gas, and the recovery area is provided with an air outlet pipe for collecting exhaust gas; wherein the reaction gas introduced from the air inlet pipe flows from the growth area toward the recovery area; a gallium recovery device is provided in the recovery area, and comprises: a heat-conducting reaction piece, comprising a fixed rod and at least one fin, wherein the fixed rod is connected to the growth chamber, and at least one fin is connected to the fixed rod, and the fin is provided at the front end of the fixed rod; wherein the gallium-containing gas in the exhaust gas passes through the heat-conducting reaction piece to form non-gaseous gallium; and a containing vessel, wherein the containing vessel is provided below the heat-conducting reaction piece and is used to collect the non-gaseous gallium.

[0007] The utility model provides a growth device with a gallium recovery device, which performs growth processing of epitaxial wafers in a growth chamber, and then recovers gallium in gallium-containing gas in tail gas through the gallium recovery device, thereby achieving efficient recovery and utilization of gallium and avoiding waste of resources.

[0008] In one embodiment of the utility model, the fixed rod extends in the direction from the growth area to the recovery area; at least one of the fins is vertically connected to the fixed rod, or the fin is inclined along the flow direction of the reaction gas, wherein when the heat-conducting reaction piece includes at least two fins, all of the fins are evenly arranged on both sides of the fixed rod.

[0009] In one embodiment of the present invention, the fins include mutually connected transverse pieces and longitudinal pieces, the longitudinal pieces are vertically connected to the fixing rods, the transverse pieces are vertically connected to the longitudinal pieces and are arranged parallel to the fixing rods.

[0010] In one embodiment of the utility model, the non-gaseous gallium includes liquid gallium, and the gallium recovery device also includes a temperature control mechanism, which includes a controller, a heater and a temperature sensor. The controller is connected to the temperature sensor and the heater, and the heater is arranged adjacent to one end of the fixed rod close to the growth area, and the temperature sensor is arranged adjacent to the heat-conducting reaction member; wherein, when the heater is in a working state, the gallium-containing gas is reduced to the liquid gallium.

[0011] In one embodiment of the present invention, one end of the fixing rod passes through the growth chamber and is connected to an external fixing surface, and a sealing ring is provided at the contact position between the fixing rod and the growth chamber.

[0012] In one embodiment of the utility model, the gallium recovery device also includes a temperature control mechanism, which includes a controller and a cooler connected to the controller. The cooler is arranged adjacent to one end of the fixed rod close to the sealing ring to cool the sealing ring.

[0013] In one embodiment of the present utility model, the temperature control mechanism further includes a temperature sensor, the temperature sensor is connected to the controller, and the temperature sensor is arranged adjacent to the sealing ring.

[0014] In one embodiment of the present invention, the container includes a main body and a filter screen, the main body is provided with a receiving interface, the receiving interface is arranged toward the heat-conducting reaction element, and the filter screen is arranged at the receiving interface.

[0015] In one embodiment of the utility model, the diameter of the fixing rod is 20-30 mm; and / or, the fin is sleeved on one end of the fixing rod close to the growth area, the shape of the fin is circular, and the diameter of the fin is 50-60 mm; and / or, the non-gaseous gallium includes solid gallium.

[0016] In one embodiment of the present invention, the depth of the main body is 4-6 mm, and the base material of the container is quartz.

[0017] The above technical solution of the utility model has the following advantages compared with the prior art:

[0018] The utility model provides a growth device with a gallium recovery device, in which a gallium recovery device is arranged in a growth chamber, and the gallium recovery device includes a heat-conducting reaction piece and a container, wherein the fins in the heat-conducting reaction piece can increase the attachment area, so that the tail gas can fully contact the heat-conducting reaction piece, and the heat-conducting reaction piece can play a role of heat conduction, so that the gallium-containing gas reacts chemically after contacting the heat-conducting reaction piece, produces non-gaseous gallium, and finally is recycled through the container. Compared with conventional epitaxial wafer growth equipment at this stage, the utility model, on the one hand, can realize efficient recycling of gallium by setting a heat-conducting reaction piece with fins, avoiding waste of resources, and is a new growth device with a gallium recovery device with broad application prospects; on the other hand, since the gallium recovery device is arranged in the growth chamber, it can reduce the amount of gallium passing through the outlet pipe before the tail gas enters the subsequent recovery system, and can reduce the agglomerates formed by byproducts and metal gallium, thereby reducing the possibility of clogging of the filter mesh of the subsequent recovery system. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to make the content of the utility model more clearly understood, the utility model is further described in detail below based on specific embodiments of the utility model in combination with the accompanying drawings.

[0020] Figure 1 It is a schematic diagram of the structure of a growth device with a gallium recovery device provided by the utility model;

[0021] Figure 2 yes Figure 1 A schematic diagram of the connection relationship of the temperature control mechanism in the growth device with the gallium recovery device shown;

[0022] Figure 3 It is a structural schematic diagram of a heat-conducting reaction element in another embodiment provided by the utility model;

[0023] Figure 4 It is a structural schematic diagram of a heat-conducting reaction component in another embodiment provided by the utility model.

[0024] Explanation of the reference numerals in the specification: 100, growth chamber; 110, growth area; 120, recovery area; 200, gallium recovery device; 210, heat-conducting reaction member; 211, fixing rod; 212, fin; 220, temperature control mechanism; 221, heater; 222, cooler; 223, controller; 224, temperature sensor; 230, container; 231, main body; 232, filter. DETAILED DESCRIPTION

[0025] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0026] The utility model provides a growth device with a gallium recovery device. The growth device comprises a growth chamber and a gallium recovery device.

[0027] The growth chamber includes a growth area and a recovery area which are interconnected. The growth area is provided with an air inlet pipe for introducing reaction gas, and the recovery area is provided with an air outlet pipe for collecting exhaust gas. The reaction gas introduced from the air inlet pipe flows from the growth area toward the recovery area.

[0028] Furthermore, in this embodiment, the interior of the growth chamber is sealed and vacuumed, the epitaxial wafer growth process and the gallium recovery process are carried out simultaneously, and the growth area and the recovery area are located on both sides of the growth chamber, with a certain spacing therebetween and do not affect each other.

[0029] Furthermore, the reaction gas required for growing GaN enters the growth chamber through the air inlet pipe. After the epitaxial wafer growth process, exhaust gas containing gallium elements will be formed. The above exhaust gas flows toward the recovery area under the action of the airflow. After recovery, the residual gas is finally discharged from the growth chamber through the air outlet pipe.

[0030] The gallium recovery device is arranged in the recovery area, and the gallium recovery device includes a heat-conducting reaction piece, and the heat-conducting reaction piece includes a fixed rod and at least one fin, the fixed rod is connected to the growth chamber, and at least one fin is connected to the fixed rod, and the fin is arranged at the front end of the fixed rod; wherein, the gallium-containing gas in the exhaust gas forms non-gaseous gallium under the action of the heat-conducting reaction piece, and the non-gaseous gallium includes solid gallium and / or liquid gallium.

[0031] Furthermore, the exhaust gas contains NH 4 Cl, GaCl, GaCl 3 And Ga, where NH 4 Cl will decompose into ammonia and hydrogen chloride gas in a high temperature environment. In an environment above 300℃, GaCl and GaCl 3 All can be reduced to non-gaseous gallium. The specific reaction process is as follows:

[0032] 2Ga(l)+2HCl(g)=2GaCl(g)+H 2 (g)

[0033] 2Ga+6HCl=2GaCl 3 +3H 2

[0034] 2GaCl 3 +3H 2 =2Ga(s / l)+6HCl

[0035] GaCl(g)+H 2 (g) = Ga (s / l) + HCl (g)

[0036] Based on the above process, when the exhaust gas contacts the heat-conducting reaction parts with a relatively high temperature (300-800°C), the gallium element in the exhaust gas can be recovered.

[0037] Furthermore, elemental gallium exists in liquid form above 29.76°C, so the reduced elemental gallium can flow along the heat-conducting reaction piece and drip into the container under the action of gravity, thereby realizing the recovery of gallium.

[0038] Furthermore, the fixing rod extends from the growth area to the recovery area, and at least one fin is vertically connected to the fixing rod. The fixing rod is used to provide a connection platform for the heat-conducting reaction piece, and the fin is used to increase the contact area between the heat-conducting reaction piece and the tail gas, so that the heat-conducting reaction piece and the tail gas are fully in contact, thereby improving the recovery efficiency of gallium.

[0039] Furthermore, the fin is arranged at the front end of the fixed rod to improve the contact effect between the fixed rod and the tail gas, and at the same time provide a recovery flow space for the non-gaseous gallium generated by the reaction.

[0040] Furthermore, when the heat-conducting reaction element includes at least two fins, all the fins are evenly arranged on both sides of the fixing rod, so that the fins can be evenly contacted with the exhaust gas, thereby improving the gallium recovery efficiency.

[0041] Furthermore, the diameter of the fixed rod is 20-30 mm, and / or the fin is sleeved on one end of the fixed rod close to the growth area, the shape of the fin is circular, and the diameter of the fin is 50-60 mm. This can maximize the recovery efficiency of gallium by the heat-conducting reaction element without affecting the normal flow of gas.

[0042] Furthermore, the fixing rod and / or the fin substrate is one or more of molybdenum, iron or stainless steel, thereby enabling efficient temperature conduction between the two.

[0043] Furthermore, one end of the fin is connected to the fixing rod and is tilted along the exhaust gas flow direction. Based on this structural setting, the fin can guide the flow process of the exhaust gas, avoiding excessive relative force between the heat-conducting reaction element and the exhaust gas, thereby ensuring the recovery effect while increasing the service life of the device.

[0044] Furthermore, the fins include interconnected transverse sheets and longitudinal sheets, the longitudinal sheets are vertically connected to the fixing rods, and the transverse sheets are vertically connected to the longitudinal sheets and arranged parallel to the fixing rods. Based on this mesh structure, the contact area between the heat-conducting reaction element and the exhaust gas can be further increased, thereby improving the recovery efficiency of gallium.

[0045] Furthermore, one end of the fixing rod passes through the growth chamber and is connected to the external fixing surface, and a sealing ring is provided at the contact position between the fixing rod and the growth chamber. Since the volume and weight of the heat-conducting reaction piece are relatively large, and at the same time, its installation process is also prevented from affecting the growth chamber, in one embodiment, one end of the heat-conducting reaction piece can be connected and fixed to the external outer surface, thereby improving the installation stability of the heat-conducting reaction piece. Based on the structure that the heat-conducting reaction piece passes through the growth chamber, a sealing ring needs to be provided at the connection between the two to ensure the high sealing performance of the growth chamber, so as to ensure that the vacuum degree of the growth chamber is not affected.

[0046] It is worth noting that after the growth process is completed, the growth chamber is opened. After the temperature of the growth chamber drops to room temperature, the operator takes out the container. Due to the decrease in temperature in the growth chamber, part of the liquid gallium in the container will solidify to form solid gallium. Therefore, the gallium in the container finally taken out is in a solid-liquid mixed state.

[0047] In one embodiment, the non-gaseous gallium includes liquid gallium, and the gallium recovery device also includes a temperature control mechanism, which includes a controller, a heater and a temperature sensor. The controller is connected to the temperature sensor and the heater. The heater is arranged adjacent to one end of the fixed rod close to the growth area, and the temperature sensor is arranged adjacent to the heat-conducting reaction element. When the heater is in a working state, the gallium-containing gas is reduced to liquid gallium.

[0048] Furthermore, the temperature sensor is used to monitor the temperature of the heat-conducting reaction component in real time. During the gallium recovery process, when the temperature of the heat-conducting reaction component is lower than 300°C, the temperature information will be transmitted to the controller, and the controller will drive the heater to work, thereby ensuring that the temperature of the heat-conducting reaction component is stably maintained above 300°C, thereby allowing the recovery process to proceed continuously and stably.

[0049] Furthermore, the temperature sensor and the heater are both spaced apart from the heat-conducting reaction element, and are respectively connected to the inner wall of the growth chamber.

[0050] Furthermore, during actual use, the operator can use the controller to perform real-time regulation of the temperature sensor and / or heater, thereby improving the flexibility of use of the device, and can also enable the device to operate automatically by presetting parameters of the controller, thereby improving the degree of automation of the device.

[0051] In another embodiment, the gallium recovery device further includes a temperature control mechanism, which includes a controller and a cooler connected to the controller, and the cooler is arranged adjacent to one end of the fixed rod close to the sealing ring, for cooling the sealing ring. Since a sealing ring needs to be arranged between the fixed rod and the reaction chamber in some embodiments, in order to avoid the long-term high temperature environment affecting the sealing performance, it is necessary to cool it intermittently, and thus, the cooler is arranged close to the sealing ring.

[0052] Furthermore, the temperature control mechanism also includes a temperature sensor, which is connected to the controller and is arranged adjacent to the sealing ring, so that the operator can observe whether the sealing ring has cooled down to the desired temperature. Similarly, the operator can adjust and control the cooler through the controller.

[0053] The gallium recovery device also includes a container, which is arranged below the heat-conducting reaction element. Specifically, the gallium reduced by the heat-conducting reaction element will accumulate and drip in liquid form, and the container is used to receive and collect the dripping gallium for recycling.

[0054] Furthermore, the container includes a main body and a filter screen, the main body is provided with a receiving interface, the receiving interface is arranged toward the heat transfer reaction element, and the filter screen is arranged at the receiving interface. During the recovery process, some ammonium chloride dust will be mixed inside the liquid gallium. By setting the filter screen, such dust impurities can be filtered to improve the purity of the liquid gallium.

[0055] Furthermore, the depth of the main body is 4 to 6 mm. Since the total amount of liquid gallium actually recovered is relatively small, the depth of the main body is set to 4 to 6 mm, which can minimize the space occupied without affecting the gas flow.

[0056] Furthermore, the container substrate is quartz or other inert substrates that can facilitate the recovery of gallium.

[0057] Embodiment 1

[0058] See also Figure 1 and Figure 2 This embodiment provides a growth device with a gallium recovery device, which includes: a growth chamber 100 and a gallium recovery device 200.

[0059] The growth chamber 100 includes a growth area 110 and a recovery area 120 which are interconnected. The growth area 110 is provided with an air inlet pipe (not shown in the figure) for introducing reaction gas, and the recovery area 120 is provided with an air outlet pipe (not shown in the figure) for collecting exhaust gas; wherein the reaction gas introduced from the air inlet pipe flows from the growth area 110 toward the recovery area 120.

[0060] The gallium recovery device 200 is disposed in the recovery area 120 , and includes a heat-conducting reaction component 210 , a temperature control mechanism 220 , and a container 230 .

[0061] The heat-conducting reaction piece 210 includes a fixing rod 211 and at least one fin 212, wherein the fixing rod 211 is connected to the growth chamber 100, and at least one fin 212 is connected to the fixing rod 211, and the fin 212 is arranged at the front end of the fixing rod 211; wherein the gallium-containing gas in the exhaust gas forms non-gaseous gallium under the action of the heat-conducting reaction piece 210.

[0062] The temperature control mechanism 220 includes a controller 223, a heater 221 and a temperature sensor 224. The controller 223 is connected to the temperature sensor 224 and the heater 221. The heater 221 is arranged adjacent to one end of the fixed rod 211 close to the growth area 110, and the temperature sensor 224 is arranged adjacent to the heat-conducting reaction member 210. When the heater 221 is in working state, the gallium-containing gas is reduced to liquid gallium.

[0063] The container 230 is disposed below the heat-conducting reaction element 210 , and is used to collect non-gaseous gallium.

[0064] In this embodiment, the fixed rod 211 extends along the flow direction of the reaction gas, at least one fin 212 is vertically connected to the fixed rod 211, and the plurality of fins 212 are circular sheets, which are evenly spaced and sleeved on the fixed rod 211. Further, in this embodiment, the diameter of the fixed rod 211 is 20 mm, and the diameter of the fin 212 is 50 mm.

[0065] One end of the fixing rod 211 passes through the growth chamber 100 and is connected to the external fixing surface. A sealing ring (not shown in the figure) is provided at the contact position between the fixing rod 211 and the growth chamber 100. Specifically, the temperature control mechanism 220 includes a cooler 222 and a controller 223. The cooler 222 is arranged near the sealing ring, and the cooler 222 is connected to the controller 223. In this embodiment, the base materials of the fixing rod 211 and the fins 212 are both molybdenum, and the two are fixedly connected and are actually arranged as an integral whole.

[0066] The container 230 includes a main body 231 and a filter 232 . The main body 231 is provided with a receiving interface (not marked in the figure), the receiving interface is arranged toward the heat transfer reaction element 210 , and the filter 232 is arranged at the receiving interface.

[0067] Furthermore, the base material of the container 230 in this embodiment is quartz; the depth of the main body 231 is 4 mm.

[0068] Embodiment 2

[0069] This embodiment provides another growth device with a gallium recovery device. The main component configuration and principle are the same as those of the first embodiment, and no further details are given here. In this embodiment, only the shape of the fin 212 in the heat-conducting reaction element 210 is different from that in the first embodiment. Figure 3 Specifically, one end of the fin 212 is connected to the fixing rod 211 and is tilted along the flow direction of the reaction gas. Thus, the heat-conducting reaction element 210 in this embodiment is approximately in a "fishbone" shape, thereby maximizing the recovery efficiency of the heat-conducting reaction element for gallium without affecting the normal flow of the gas.

[0070] Furthermore, in this embodiment, the base materials of the fixing rod 211 and the fin 212 are both iron, the diameter of the fixing rod 211 is 30 mm, the diameter of the fin 212 is 60 mm, and the depth of the main body 231 is 6 mm.

[0071] Embodiment 3

[0072] This embodiment provides another growth device with a gallium recovery device. The main component configuration and principle are the same as those of the first embodiment, and no further details are given here. In this embodiment, only the shape of the fin 212 in the heat-conducting reaction element 210 is different from that in the first embodiment. Figure 4Specifically, the fins 212 include mutually connected transverse pieces and longitudinal pieces, the longitudinal pieces are vertically connected to the fixing rods 211, and the transverse pieces are vertically connected to the longitudinal pieces and are arranged parallel to the fixing rods 211. Therefore, the fins 212 in this embodiment are distributed in a mesh shape, further increasing the contact area between the heat-conducting reaction element 210 and the exhaust gas.

[0073] In addition, in this embodiment, the base materials of the fixing rod 211 and the fin 212 are both stainless steel, the diameter of the fixing rod 211 is 25 mm, the diameter of the fin 212 is 55 mm, and the depth of the main body 231 is 5 mm.

[0074] In summary, the growth device with a gallium recovery device provided by the utility model has a gallium recovery device 200 arranged in the growth chamber 100, and the gallium recovery device 200 includes a heat-conducting reaction piece 210 and a containing vessel 230. The fins 212 in the heat-conducting reaction piece 210 can increase the attachment area so that the exhaust gas can fully contact the heat-conducting reaction piece 210. The heat-conducting reaction piece 210 can play a role of heat conduction, so that the gallium-containing gas undergoes a chemical reaction after contacting the heat-conducting reaction piece 210 to produce non-gaseous gallium, which is finally recycled through the containing vessel 230. Compared with conventional epitaxial wafer growth equipment at this stage, the utility model, on the one hand, can achieve efficient recycling of gallium and avoid waste of resources by providing a heat-conducting reaction piece 210 with fins 212, and is a new growth device with a gallium recovery device with broad application prospects; on the other hand, since the gallium recovery device 200 is arranged in the growth chamber 100, it can reduce the amount of gallium passing through the exhaust pipe before the exhaust gas enters the subsequent recovery system, and can reduce the agglomerates formed by by-products and metallic gallium, thereby reducing the possibility of clogging of the filter mesh of the subsequent recovery system.

[0075] Obviously, the above embodiments are merely examples for the purpose of clear explanation and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from these are still within the scope of protection of the invention of the utility model.

Claims

1. A growth device with a gallium recovery device, characterized in that: include: A growth chamber, the growth chamber comprising a growth area and a recovery area which are interconnected, the growth area being provided with an air inlet pipe for introducing a reaction gas, and the recovery area being provided with an air outlet pipe for collecting tail gas; wherein the reaction gas introduced from the air inlet pipe flows from the growth area toward the recovery area; A gallium recovery device, the gallium recovery device is arranged in the recovery area, and comprises: A heat-conducting reaction piece, comprising a fixing rod and at least one fin, wherein the fixing rod is connected to the growth chamber, at least one fin is connected to the fixing rod, and the fin is arranged at the front end of the fixing rod; wherein the gallium-containing gas in the tail gas passes through the heat-conducting reaction piece to form non-gaseous gallium; A container is disposed below the heat-conducting reaction component and is used to collect the non-gaseous gallium.

2. The growth device with gallium recovery device according to claim 1, characterized in that: The fixing rod extends from the growth area to the recovery area; at least one of the fins is vertically connected to the fixing rod, or the fin is inclined along the flow direction of the reaction gas; Wherein, when the heat-conducting reaction member includes at least two fins, all the fins are evenly arranged on both sides of the fixing rod.

3. The growth device with gallium recovery device according to claim 1, characterized in that: The fins include a transverse piece and a longitudinal piece connected to each other, the longitudinal piece is vertically connected to the fixing rod, and the transverse piece is vertically connected to the longitudinal piece and is arranged parallel to the fixing rod.

4. The growth device with gallium recovery device according to claim 1, characterized in that: The non-gaseous gallium includes liquid gallium, and the gallium recovery device further includes a temperature control mechanism, which includes a controller, a heater, and a temperature sensor. The controller is connected to the temperature sensor and the heater. The heater is disposed adjacent to one end of the fixed rod close to the growth region, and the temperature sensor is disposed adjacent to the heat-conducting reaction member. Wherein, when the heater is in working state, the gallium-containing gas is reduced to the liquid gallium.

5. The growth device with gallium recovery device according to claim 1, characterized in that: One end of the fixing rod passes through the growth chamber and is connected to an external fixing surface. A sealing ring is provided at a contact position between the fixing rod and the growth chamber.

6. The growth device with gallium recovery device according to claim 5, characterized in that: The gallium recovery device also includes a temperature control mechanism, which includes a controller and a cooler connected to the controller. The cooler is arranged adjacent to one end of the fixed rod close to the sealing ring and is used to cool the sealing ring.

7. The growth device with gallium recovery device according to claim 6, characterized in that: The temperature control mechanism also includes a temperature sensor, which is connected to the controller and is disposed adjacent to the sealing ring.

8. The growth device with gallium recovery device according to claim 1, characterized in that: The container comprises a main body and a filter screen. The main body is provided with a receiving interface, the receiving interface is arranged toward the heat-conducting reaction element, and the filter screen is arranged at the receiving interface.

9. The growth device with gallium recovery device according to claim 1, characterized in that: The diameter of the fixing rod is 20-30 mm; And / or, the fin is sleeved on one end of the fixing rod close to the growth area, the shape of the fin is circular, and the diameter of the fin is 50-60 mm; And / or, the non-gaseous gallium includes solid gallium.

10. The growth device with gallium recovery device according to claim 8, characterized in that: The depth of the main body is 4-6 mm, and the base material of the container is quartz.

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