Thin film deposition apparatus

Abstract

A thin film deposition device relates to the technical field of semiconductor process equipment. The thin film deposition device comprises a wafer platform and a heating platform, a containing groove is formed in the face, close to the heating platform, of the wafer platform, the heating platform is detachably connected into the containing groove, the face, oppositely arranged, of the heating platform and the face, oppositely arranged, of the wafer platform are in surface contact, and the heating platform is used for heating the wafer platform. The thin film deposition device can be conveniently maintained when the heating device is damaged, and the maintenance cost of the thin film deposition device can be reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor process equipment, in particular to a thin film deposition device. Background Art

[0002] Thin film deposition technology is a process method that deposits substances on the surface of a substrate to form a thin film. As one of the important core process technologies used in the semiconductor manufacturing process, it is often used to prepare thin films of various materials. It has a wide range of applications in electronic devices, optical devices, nanomaterials and other fields. By controlling the conditions and parameters in the deposition process, thin film materials with different properties and functions can be obtained.

[0003] During the thin film deposition process, the wafer placed on the ground electrode is usually heated to 350°C under high pressure, and the deposited films include silicon dioxide, silicon nitride and low-stress oxynitride films. In the prior art, during the thin film deposition process, a heating wire arranged in the wafer placement platform is usually used to provide heat. However, this heating method makes it difficult to repair the heating wire once it is damaged, which will increase the maintenance cost of the wafer platform. Utility Model Content

[0004] The utility model aims to provide a thin film deposition device, which can be easily repaired when a heating device is damaged, and can reduce the maintenance cost of the thin film deposition device.

[0005] The embodiment of the utility model is achieved as follows:

[0006] In one aspect of the utility model, a thin film deposition device is provided, which includes a wafer platform and a heating platform, wherein a receiving groove is provided on a side of the wafer platform close to the heating platform, the heating platform is detachably connected to the receiving groove, and the heating platform is in surface contact with a side of the wafer platform facing the heating platform, and the heating platform is used to heat the wafer platform. The thin film deposition device can be easily repaired when the heating device is damaged, and the maintenance cost of the thin film deposition device can be reduced.

[0007] Optionally, the thin film deposition device further includes a base, which is disposed on a side of the heating platform away from the wafer platform, and the base is connected to the heating platform.

[0008] Optionally, a heating tube is connected to a side of the base close to the wafer platform, and the heating tube is connected to the heating platform for heating the heating platform.

[0009] Optionally, the heating tube comprises a plurality of heating tubes, and the plurality of heating tubes are evenly distributed on the base.

[0010] Optionally, the orthographic projection of the heating platform on the base is located in the central area of ​​the base.

[0011] Optionally, when the heating platform is connected to the base, the area of ​​the orthographic projection of the heating platform on the base is larger than the area of ​​the base exposed outside the heating platform.

[0012] Optionally, the accommodating groove includes a first sub-groove and a second sub-groove connected to the first sub-groove, the heating platform is arranged in the first sub-groove, the base is arranged in the second sub-groove, and a surface of the base facing the wafer platform is in surface contact.

[0013] Optionally, a heating column is provided on one side of the base facing the wafer platform, and a positioning hole adapted to the heating column is provided on one side of the wafer platform facing the base. The heating column is inserted into the positioning hole for positioning the base on the wafer platform and for heating the wafer platform.

[0014] Optionally, the heating column comprises a plurality of heating columns, and the plurality of heating columns are arranged around the periphery of the heating platform.

[0015] Optionally, a surface of the base facing away from the heating platform is flush with a surface of the wafer platform facing the base.

[0016] The beneficial effects of the utility model include:

[0017] The thin film deposition device provided by the present application includes a wafer platform and a heating platform. A receiving groove is provided on one side of the wafer platform close to the heating platform. The heating platform is detachably connected to the receiving groove, and the heating platform is in surface contact with the side of the wafer platform facing each other. The heating platform is used to heat the wafer platform. The present application sets a heating platform and a wafer platform, and makes the heating platform detachably connected to the receiving groove of the wafer platform. In this way, it is easy to disassemble the heating platform. When the heating platform is damaged, the heating platform can be removed from the wafer platform for repair. In this way, compared with the prior art that sets the heating device inside the wafer platform and is inconvenient to remove, the setting method of the present application can facilitate repair when the heating device is damaged, and can reduce the maintenance cost of the thin film deposition device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A schematic diagram of the structure of a thin film deposition device provided by an embodiment of the utility model;

[0020] Figure 2 A schematic diagram of the structure of a wafer platform provided in an embodiment of the utility model;

[0021] Figure 3 A schematic structural diagram of a base and a heating platform provided in an embodiment of the utility model.

[0022] Icons: 10 - wafer platform; 11 - receiving groove; 111 - first sub-groove; 112 - second sub-groove; 12 - positioning hole; 20 - heating platform; 30 - base; 40 - heating tube; 50 - heating column. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.

[0024] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0026] In the description of the present utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0027] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0028] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] Please refer to Figure 1 and Figure 2 The present embodiment provides a thin film deposition device, which includes a wafer platform 10 and a heating platform 20. A receiving groove 11 is provided on a side of the wafer platform 10 close to the heating platform 20. The heating platform 20 is detachably connected to the receiving groove 11, and the heating platform 20 is in surface contact with a side of the wafer platform 10 that is arranged opposite to the heating platform 20. The heating platform 20 is used to heat the wafer platform 10. The thin film deposition device can be easily repaired when the heating device is damaged, and the maintenance cost of the thin film deposition device can be reduced.

[0030] The wafer platform 10 and the heating platform 20 are arranged along a first direction, which is the thickness direction of the wafer platform 10. The wafer platform 10 has a first surface and a second surface opposite to each other, wherein the first surface is used for thin film deposition and for heating during the thin film deposition process, and the second surface is arranged toward the heating platform 20.

[0031] In addition, a receiving groove 11 is provided on one side of the wafer platform 10 close to the heating platform 20 , that is, the second surface is provided with the receiving groove 11 . The receiving groove 11 is used to receive the heating platform 20 .

[0032] The heating platform 20 is detachably connected to the wafer platform 10, and is used to heat the wafer platform 10, so that the side of the wafer platform 10 facing away from the heating platform 20 can play a heating role in the process of thin film deposition. It should be noted that the specific method of detaching and connecting the heating platform 20 and the wafer platform 10 is not limited in this application, as long as the heating platform 20 can be detachable relative to the wafer platform 10, the heating platform 20 can be only accommodated in the receiving groove 11, or the heating platform 20 and the wafer platform 10 can be relatively limited while the heating platform 20 is accommodated in the receiving groove 11 (the limitation here can be to limit the movement of the heating platform 20 along its axial direction, or to limit the movement of the heating platform 20 along its radial direction, or to limit the movement of the heating platform 20 along its axial direction and to limit the movement of the heating platform 20 along its radial direction), and the heating platform 20 and the wafer platform 10 can also be connected by a connector while the heating platform 20 is accommodated in the receiving groove 11.

[0033] In addition, in the present embodiment, the heating platform 20 and the wafer platform 10 are arranged in a surface contact with each other, that is, the side of the heating platform 20 close to the wafer platform 10 and the side of the receiving groove 11 of the wafer platform 10 corresponding to the heating platform 20 are in contact with each other. The present application can increase the contact area between the heating platform 20 and the wafer platform 10 by making the heating platform 20 and the wafer platform 10 in surface contact, so as to achieve uniform heating of the wafer platform 10, so as to achieve rapid and stable film formation when depositing thin films on the wafer platform 10, thereby improving the film formation quality of the thin film deposition device in the thin film deposition process.

[0034] In addition, it should be noted that the present application sets a heating platform 20 and a wafer platform 10, so that the wafer platform 10 can be heated by the heating platform 20, thereby achieving a heating effect in the thin film deposition process, which is equivalent to directly setting a heating device in the wafer platform 10 in the prior art. The heating platform 20 of the present application and the wafer platform 10 for depositing thin films are independent of each other, and can heat the wafer platform 10 by heat transfer. In this way, on the one hand, the heating platform 20 heats the wafer platform 10, and the heating effect in the thin film deposition process can also be achieved; on the other hand, if the heating platform 20 is damaged, the heating platform 20 can be repaired without repairing the wafer platform 10 for depositing thin films. Compared with repairing the wafer platform 10, repairing the heating platform 20 can reduce the maintenance cost of the thin film deposition device.

[0035] In summary, the thin film deposition device provided by the present application includes a wafer platform 10 and a heating platform 20. A receiving groove 11 is provided on a side of the wafer platform 10 close to the heating platform 20. The heating platform 20 is detachably connected to the receiving groove 11, and the heating platform 20 is in surface contact with a side of the wafer platform 10 that is arranged opposite to the heating platform 20. The heating platform 20 is used to heat the wafer platform 10. The present application sets the heating platform 20 and the wafer platform 10, and makes the heating platform 20 detachably connected to the receiving groove 11 of the wafer platform 10. In this way, it is convenient to disassemble the heating platform 20. When the heating platform 20 is damaged, the heating platform 20 can be removed from the wafer platform 10 for maintenance. In this way, compared with the prior art in which the heating device is arranged inside the wafer platform 10 and is inconvenient to remove, the arrangement method of the present application can facilitate maintenance when the heating device is damaged, and can reduce the maintenance cost of the thin film deposition device.

[0036] Optionally, see Figure 1 and Figure 3 The thin film deposition device further includes a base 30, which is disposed on a side of the heating platform 20 away from the wafer platform 10, and the base 30 is connected to the heating platform 20. The base 30 can support the heating platform 20.

[0037] To facilitate heating of the heating platform 20, optionally, a heating tube 40 is connected to one side of the base 30 close to the wafer platform 10, and the heating tube 40 is connected to the heating platform 20 for heating the heating platform 20. It should be noted that the heating tube 40 is connected to the heating platform 20 for heating the heating platform 20, wherein the specific heating method of the heating platform 20 by the heating tube 40 is not limited in this application, and those skilled in the art can select any feasible method as needed.

[0038] In order to make the heating tube 40 heat the heating platform 20 more uniformly, optionally, the heating tube 40 includes multiple heating tubes, and the multiple heating tubes 40 are evenly distributed on the base 30. In this way, the heating platform 20 can be evenly heated by multiple heating tubes 40, which can improve the temperature balance of the heating platform 20, thereby improving the heating uniformity of the thin film deposition device and improving the film formation quality.

[0039] The specific number of the heating tubes 40 is not limited in this application and may be three, four, six or eight.

[0040] Also, optionally, the orthographic projection of the heating platform 20 on the base 30 is located in the central area of ​​the base 30, such as Figure 3 That is to say, in this embodiment, the central axis of the heating platform 20 and the central axis of the base 30 are arranged to coincide with each other.

[0041] In addition, it should be noted that when the heating platform 20 is installed on the wafer platform 10 , the center of the orthographic projection of the heating platform 20 on the wafer platform 10 should also coincide with the center of the wafer platform 10 .

[0042] Optionally, when the heating platform 20 is connected to the base 30, the area of ​​the orthographic projection of the heating platform 20 on the base 30 is larger than the area of ​​the base 30 exposed outside the heating platform 20, such as Figure 3 That is to say, the area of ​​the heating platform 20 is larger than the area of ​​the base 30 exposed from the heating platform 20 , so that the effective heating area of ​​the heating platform 20 on the wafer platform 10 is larger.

[0043] The specific ratio between the area of ​​the orthographic projection of the heating platform 20 on the base 30 and the area of ​​the base 30 exposed outside the heating platform 20 is not limited in this application and can be determined according to actual needs.

[0044] Please refer to Figure 2Optionally, the accommodating groove 11 includes a first sub-groove 111 and a second sub-groove 112 connected to the first sub-groove 111, the heating platform 20 is disposed in the first sub-groove 111, the base 30 is disposed in the second sub-groove 112, and the base 30 is in surface contact with a surface facing the wafer platform 10.

[0045] Among them, the first sub-groove 111 and the second sub-groove 112 are connected, and the first sub-groove 111 corresponds to the heating platform 20, and the second sub-groove 112 corresponds to the base 30. In this way, the heating platform 20 can be accommodated in the first sub-groove 111, and the base 30 can be accommodated in the second sub-groove 112. In this way, the structure of the thin film deposition device is simpler.

[0046] In order to effectively heat the edge area of ​​the wafer platform 10, optionally, a heating column 50 is further provided on the side of the base 30 facing the wafer platform 10, and a positioning hole 12 adapted to the heating column 50 is provided on the side of the wafer platform 10 facing the base 30. The heating column 50 is inserted into the positioning hole 12 for positioning the base 30 on the wafer platform 10 and for heating the wafer platform 10.

[0047] The present application sets a heating column 50. On the one hand, the heating column 50 can correspond to the corresponding positioning hole 12 on the wafer platform 10, so as to realize the positioning of the base 30 and the wafer platform 10; on the other hand, the heating column 50 can effectively heat the edge area of ​​the wafer platform 10 (that is, the area where the wafer platform 10 is located outside the heating platform 20), so as to increase the heating area of ​​the thin film deposition device and improve the heating uniformity of the wafer platform 10.

[0048] To achieve a better heating effect, optionally, the heating column 50 includes a plurality of heating columns 50, and the plurality of heating columns 50 are arranged around the outer periphery of the heating platform 20. The number of the heating columns 50 should correspond to the number of the positioning holes 12, for example, the number of the heating columns 50 and the positioning holes 12 are four, six, eight or ten, etc., and the present application does not limit the specific number of the two.

[0049] In order to make the heating effect more uniform, the plurality of heating columns 50 are evenly distributed on the area of ​​the base 30 exposed to the heating platform 20 .

[0050] In addition, in order to make the overall structure of the thin film deposition device thinner and smaller in size, the side of the base 30 facing away from the heating platform 20 is optionally arranged flush with the side of the wafer platform 10 facing the base 30. Figure 1 In the shown orientation, the lower surface of the base 30 is flush with the lower surface of the wafer platform 10 (the lower surface of the wafer platform 10 is the second surface mentioned above).

[0051] The above description is only an optional embodiment of the utility model and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

[0052] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present utility model will not further describe various possible combinations.

Claims

1. A thin film deposition device, characterized in that: It includes a wafer platform and a heating platform. A receiving groove is provided on a side of the wafer platform close to the heating platform. The heating platform is detachably connected to the receiving groove. The heating platform is in surface contact with a side of the wafer platform facing the heating platform. The heating platform is used to heat the wafer platform.

2. The thin film deposition device according to claim 1, characterized in that: The thin film deposition device further comprises a base, which is arranged on a side of the heating platform away from the wafer platform, and the base is connected to the heating platform.

3. The thin film deposition device according to claim 2, characterized in that: A heating tube is connected to a side of the base close to the wafer platform, and the heating tube is connected to the heating platform for heating the heating platform.

4. The thin film deposition device according to claim 3, characterized in that: The heating tubes include a plurality of heating tubes, and the plurality of heating tubes are evenly distributed on the base.

5. The thin film deposition device according to claim 2, characterized in that: The orthographic projection of the heating platform on the base is located in the central area of ​​the base.

6. The thin film deposition device according to claim 5, characterized in that: When the heating platform is connected to the base, the area of ​​the orthographic projection of the heating platform on the base is larger than the area of ​​the base exposed outside the heating platform.

7. The thin film deposition device according to claim 5, characterized in that: The containing groove includes a first sub-groove and a second sub-groove connected to the first sub-groove, the heating platform is arranged in the first sub-groove, the base is arranged in the second sub-groove, and the base is in surface contact with a surface arranged opposite to the wafer platform.

8. The thin film deposition device according to claim 7, characterized in that: A heating column is also provided on one side of the base facing the wafer platform, and a positioning hole adapted to the heating column is provided on one side of the wafer platform facing the base. The heating column is inserted into the positioning hole to position the base on the wafer platform and to heat the wafer platform.

9. The thin film deposition device according to claim 8, characterized in that: The heating columns include a plurality of heating columns, and the plurality of heating columns are arranged around the outer periphery of the heating platform.

10. The thin film deposition device according to claim 7, characterized in that: A surface of the base facing away from the heating platform is flush with a surface of the wafer platform facing the base.

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