High-voltage-resistant junction field effect transistor

Abstract

The utility model discloses a high voltage resistant junction field effect transistor, which relates to the technical field of junction field effect transistors and comprises a junction field effect transistor body, a connecting plate is fixedly mounted on the outer wall of one side of the junction field effect transistor body, and an adjusting mechanism is arranged on one side of the connecting plate. A buffer mechanism is arranged on the front face of the junction field effect transistor body, the adjusting mechanism comprises an adjusting half wheel, a supporting rod and a mounting box, the adjusting half wheel is fixedly mounted on the outer wall of one side of the connecting plate, and the buffer mechanism comprises a buffer rod, a rubber pad and a silica gel pad. According to the utility model, the rubber pad can perform preliminary buffering on pressure, the rubber pad extrudes the buffer spring to further buffer the pressure, and the foam ring, the sponge rebound frame and the elastic ball are elastic, so that high pressure generated by collision can be buffered, the junction field effect transistor body is protected, and the service life of the junction field effect transistor body is prolonged. And the device is convenient and high-voltage-resistant.

Description

Technical Field

[0001] The utility model relates to the technical field of junction field effect tubes, in particular to a high-voltage resistant junction field effect tube. Background Art

[0002] The junction field effect transistor is made by making two highly doped P regions on the same N-shaped semiconductor and connecting them together. The electrode drawn out is called the gate g, and two electrodes are drawn out at both ends of the N-type semiconductor, respectively called the drain d and the source s. The junction field effect transistor is a three-terminal active device with amplification function. It is the simplest type of unipolar field effect transistor. It can be divided into two types: N-channel or P-channel.

[0003] For example, Chinese patent publication number CN217691139U discloses a high-voltage resistant junction field effect transistor, including a shell, fixed blocks are fixed on both sides of the rear end outer wall of the shell, a P-type substrate is provided at the bottom of the inner wall of the shell, an N-type lightly doped region is provided at the top of the P-type substrate, heat dissipation components are fixed to the outer walls on both sides of the shell, and a mounting assembly is provided on the bottom outer wall of the shell, the mounting assembly includes a connecting column, a mounting base and a rotating component, the upper end of the connecting column is connected to the bottom outer wall of the shell, and the bottom end of the rotating component is connected to the top of the mounting base. Through the above method, it can be seen that the utility model can enable workers to adjust the installation angle of the shell according to needs during actual installation, thereby reducing the occurrence of obstacles for technicians when installing the effect tube.

[0004] However, the above device still has the following disadvantages: lack of protection for the junction field effect transistor, and the junction field effect transistor is easily damaged by pressure when subjected to external collision. Utility Model Content

[0005] The utility model provides a high voltage resistant junction field effect transistor to solve the problems raised in the above background technology.

[0006] In order to solve the above technical problems, the technical solution adopted by the utility model is:

[0007] A high-voltage resistant junction field effect transistor comprises a junction field effect transistor body, a connecting plate is fixedly mounted on one side outer wall of the junction field effect transistor body, an adjusting mechanism is arranged on one side of the connecting plate, a buffer mechanism is arranged on the front side of the junction field effect transistor body, the adjusting mechanism comprises an adjusting half wheel, a support rod and an installation box, the adjusting half wheel is fixedly mounted on one side outer wall of the connecting plate, the support rod is movably mounted on the inner wall of the adjusting half wheel, the installation box is fixedly mounted on one end of the support rod, the buffer mechanism comprises a buffer rod, a rubber pad and a silicone pad, the buffer rod is fixedly mounted on one side outer wall of the connecting plate, the rubber pad is movably mounted on the outer wall of the buffer rod, and the silicone pad is fixedly mounted on one side outer wall of the junction field effect transistor body.

[0008] A further improvement of the technical solution of the utility model is that: a bolt is movably installed on the inner wall of the installation box, a threaded rod is movably installed on the inner wall of the installation box, and a turning handle is fixedly installed on one end of the threaded rod.

[0009] A further improvement of the technical solution of the utility model is that a rack is movably mounted on the outer wall of the threaded rod, and the outer wall of the rack is movably connected to the outer wall of the adjusting half wheel.

[0010] A further improvement of the technical solution of the utility model is that a guide block is fixedly installed on an outer wall of one side of the rack, a limiting groove is fixedly installed on an inner wall of one side of the installation box, and the outer wall of the guide block is movably connected to the inner wall of the limiting groove.

[0011] A further improvement of the technical solution of the utility model is that a buffer spring is movably sleeved on the outer wall of the buffer rod, one end of the buffer spring is fixedly connected to the outer wall of one side of the connecting plate, and the other end of the buffer spring is fixedly connected to the outer wall of one side of the rubber pad.

[0012] A further improvement of the technical solution of the utility model is that a foam ring is fixedly installed on the outer wall of one side of the rubber pad, the outer wall of the foam ring is fixedly connected to the outer wall of one side of the silicone pad, the inner wall of the foam ring is fixedly installed with a sponge rebound frame, and the inner wall of the sponge rebound frame is fixedly installed with a pinball.

[0013] Due to the adoption of the above technical solution, the utility model has achieved the following technical progress compared with the prior art:

[0014] The utility model provides a high-voltage resistant junction field effect tube. Through the interaction of an adjusting half wheel, a support rod, a mounting box, bolts, a threaded rod, a rack, a guide block and a limit groove, the mounting box is conveniently installed through the arranged bolts, so that a connecting plate and a junction field effect tube body on one side of the mounting box are installed, the rack on the threaded rod is driven to move by rotating the turning handle, the rack drives the adjusting half wheel to rotate around the support rod, the adjusting half wheel drives the junction field effect tube body on the connecting plate to rotate, and the mounting angle of the junction field effect tube body is adjusted, which has the advantage of convenient adjustment of the mounting angle.

[0015] The utility model provides a high-pressure resistant junction field effect tube. Through the interaction of a buffer rod, a rubber pad, a silicone pad, a buffer spring, a foam ring, a sponge rebound frame and a pinball, when a junction field effect tube body is subjected to external collision, the arranged rubber pad can initially buffer the pressure. At the same time, the rubber pad squeezes the buffer spring to further buffer the pressure. The arranged foam ring, the sponge rebound frame and the pinball are all elastic and can buffer the high pressure generated by the collision, so as to protect the junction field effect tube body. The utility model has the advantage of convenient high-pressure resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural schematic diagram of the utility model;

[0017] Figure 2 It is a cross-sectional schematic diagram of the structural adjustment mechanism of the utility model;

[0018] Figure 3 It is a cross-sectional schematic diagram of the structural buffer mechanism of the utility model;

[0019] Figure 4 It is an enlarged schematic diagram of the structure A part of the utility model.

[0020] In the figure: 1. JFET body; 2. Connecting plate; 3. Adjusting mechanism; 31. Adjusting half wheel; 32. Support rod; 33. Mounting box; 34. Bolt; 35. Threaded rod; 36. Rack; 4. Buffering mechanism; 41. Buffering rod; 42. Rubber pad; 43. Silicone pad; 44. Buffering spring; 45. Foam ring; 46. Sponge rebound frame; 47. Pinball. DETAILED DESCRIPTION

[0021] The present invention is further described in detail below in conjunction with the embodiments: Example 1

[0022] like Figure 1-4As shown, the utility model provides a high-voltage resistant junction field effect transistor, including a junction field effect transistor body 1, a connecting plate 2 is fixedly installed on the outer wall of one side of the junction field effect transistor body 1, an adjusting mechanism 3 is arranged on one side of the connecting plate 2, a buffer mechanism 4 is arranged on the front of the junction field effect transistor body 1, the adjusting mechanism 3 includes an adjusting half wheel 31, a support rod 32 and an installation box 33, the adjusting half wheel 31 is fixedly installed on the outer wall of one side of the connecting plate 2, the support rod 32 is movably installed on the inner wall of the adjusting half wheel 31, and the installation box 33 is fixedly installed on one end of the support rod 32. The buffer mechanism 4 includes a buffer rod 41, a rubber pad 42 and a silicone pad 43. The buffer rod 41 is fixedly mounted on the outer wall of one side of the connecting plate 2, the rubber pad 42 is movably mounted on the outer wall of the buffer rod 41, and the silicone pad 43 is fixedly mounted on the outer wall of one side of the junction field effect transistor body 1. A bolt 34 is movably mounted on the inner wall of the mounting box 33, and a threaded rod 35 is movably mounted on the inner wall of the mounting box 33. A turning handle is fixedly mounted on one end of the threaded rod 35, and a rack 36 is movably mounted on the outer wall of the threaded rod 35. The outer wall of the rack 36 is movably connected to the outer wall of the adjusting half wheel 31.

[0023] In this embodiment, the installation box 33 is conveniently installed by the provided bolts 34, so that the connecting plate 2 and the junction field effect transistor body 1 on one side of the installation box 33 are installed. When the installation angle of the junction field effect transistor body 1 needs to be adjusted, the turning handle drives the threaded rod 35 to rotate, the threaded rod 35 drives the rack 36 to move, and the rack 36 drives the adjustment half wheel 31 to rotate around the support rod 32. The adjustment half wheel 31 drives the junction field effect transistor body 1 on the connecting plate 2 to rotate, so as to adjust the installation angle of the junction field effect transistor body 1. Example 2

[0024] like Figure 1-4 As shown, based on Example 1, the utility model provides a technical solution: preferably, a guide block is fixedly installed on the outer wall of one side of the rack 36, and a limiting groove is fixedly installed on the inner wall of one side of the mounting box 33. The outer wall of the guide block is movably connected to the inner wall of the limiting groove. The set guide block and limiting groove can limit the rack 36 to prevent the rack 36 from rotating with the threaded rod 35. Example 3

[0025] like Figure 1-4As shown, on the basis of Example 1, the utility model provides a technical solution: preferably, a buffer spring 44 is movably sleeved on the outer wall of the buffer rod 41, one end of the buffer spring 44 is fixedly connected to the outer wall of one side of the connecting plate 2, the other end of the buffer spring 44 is fixedly connected to the outer wall of one side of the rubber pad 42, a foam ring 45 is fixedly installed on the outer wall of one side of the rubber pad 42, the outer wall of the foam ring 45 is fixedly connected to the outer wall of one side of the silicone pad 43, the inner wall of the foam ring 45 is fixedly installed with a sponge rebound frame 46, and the inner wall of the sponge rebound frame 46 is fixedly installed with a marble 47.

[0026] In this embodiment, when the junction field effect transistor body 1 is subjected to external collision, the provided rubber pad 42 can initially buffer the pressure. At the same time, the rubber pad 42 squeezes the buffer spring 44, and the buffer spring 44 can further buffer the pressure. When the rubber pad 42 is under pressure, it will squeeze the foam ring 45, the foam ring 45 squeezes the sponge rebound frame 46, and the sponge rebound frame 46 squeezes the ball 47. The foam ring 45, the sponge rebound frame 46 and the ball 47 are all elastic and can buffer the high pressure generated by the collision, thereby protecting the junction field effect transistor body 1.

[0027] The following is a detailed description of the working principle of this high-voltage junction field-effect transistor.

[0028] like Figure 1-4 As shown, the installation box 33 is conveniently installed by the provided bolts 34, so as to install the connecting plate 2 and the junction field effect tube body 1 on one side of the installation box 33. When the installation angle of the junction field effect tube body 1 needs to be adjusted, the turning handle drives the threaded rod 35 to rotate, the threaded rod 35 drives the rack 36 to move, the rack 36 drives the adjusting half wheel 31 to rotate around the support rod 32, and the adjusting half wheel 31 drives the junction field effect tube body 1 on the connecting plate 2 to rotate, so as to adjust the installation angle of the junction field effect tube body 1. The provided guide block and the limit groove can limit the rack 36 to prevent the rack 36 from following The threaded rod 35 rotates, which has the advantage of convenient adjustment of the installation angle. When the junction field effect tube body 1 is subjected to external collision, the provided rubber pad 42 can initially buffer the pressure. At the same time, the rubber pad 42 squeezes the buffer spring 44, and the buffer spring 44 can further buffer the pressure. When the rubber pad 42 is compressed, it will squeeze the foam ring 45, the foam ring 45 squeezes the sponge rebound frame 46, and the sponge rebound frame 46 squeezes the ball 47. The foam ring 45, the sponge rebound frame 46 and the ball 47 are all elastic and can buffer the high pressure generated by the collision, thereby protecting the junction field effect tube body 1, and has the advantage of convenient high pressure resistance.

[0029] The above generally describes the present invention in detail, but it is obvious to a person skilled in the art that some modifications or improvements can be made to the present invention. Therefore, modifications or improvements that do not deviate from the spirit of the present invention are within the scope of protection of the present invention.

Claims

1. A high voltage resistant junction field effect transistor, comprising a junction field effect transistor body (1), a connecting plate (2) being fixedly mounted on an outer wall of one side of the junction field effect transistor body (1), characterized in that: An adjustment mechanism (3) is provided on one side of the connecting plate (2), and a buffer mechanism (4) is provided on the front side of the junction field effect transistor body (1). The adjustment mechanism (3) comprises an adjustment half wheel (31), a support rod (32) and a mounting box (33). The adjustment half wheel (31) is fixedly mounted on an outer wall of one side of the connecting plate (2), the support rod (32) is movably mounted on an inner wall of the adjustment half wheel (31), and the mounting box (33) is fixedly mounted on one end of the support rod (32). The buffer mechanism (4) comprises a buffer rod (41), a rubber pad (42) and a silicone pad (43). The buffer rod (41) is fixedly mounted on an outer wall of one side of the connecting plate (2), the rubber pad (42) is movably mounted on an outer wall of the buffer rod (41), and the silicone pad (43) is fixedly mounted on an outer wall of one side of the junction field effect transistor body (1).

2. The high voltage resistant junction field effect transistor according to claim 1, characterized in that: A bolt (34) is movably mounted on the inner wall of the installation box (33), a threaded rod (35) is movably mounted on the inner wall of the installation box (33), and a turning handle is fixedly mounted on one end of the threaded rod (35).

3. The high voltage resistant junction field effect transistor according to claim 2, characterized in that: A rack (36) is movably mounted on the outer wall of the threaded rod (35), and the outer wall of the rack (36) is movably connected to the outer wall of the adjusting half wheel (31).

4. The high voltage resistant junction field effect transistor according to claim 3, characterized in that: A guide block is fixedly mounted on an outer wall of one side of the rack (36), a limiting groove is fixedly mounted on an inner wall of one side of the installation box (33), and the outer wall of the guide block is movably connected to the inner wall of the limiting groove.

5. The high voltage resistant junction field effect transistor according to claim 1, characterized in that: A buffer spring (44) is movably sleeved on the outer wall of the buffer rod (41), one end of the buffer spring (44) is fixedly connected to an outer wall of one side of the connecting plate (2), and the other end of the buffer spring (44) is fixedly connected to an outer wall of one side of the rubber pad (42).

6. The high voltage resistant junction field effect transistor according to claim 1, characterized in that: A foam ring (45) is fixedly mounted on one outer wall of the rubber pad (42); the outer wall of the foam ring (45) is fixedly connected to the outer wall of one outer wall of the silicone pad (43); a sponge rebound frame (46) is fixedly mounted on the inner wall of the foam ring (45); and a pinball (47) is fixedly mounted on the inner wall of the sponge rebound frame (46).

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