Laminating device for curing photovoltaic silicon wafer

By designing a lamination device for photovoltaic silicon wafers, the high-temperature cloth in the chamber is used to transmit and partition heating and cooling, and combined with the rolling rolling unit, the problems of large land and high energy consumption of traditional sintering furnace equipment are solved, and the silicon wafer is improved The firmness and lamination effect of the electrode.

CN222233651UActive Publication Date: 2024-12-24QINHUANGDAO SHUOGU PHOTOVOLTAIC SCI&TECH CO LTD
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Patent Information

Application Number
CN202420973960.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-08
Publication Date
2024-12-24
Estimated Expiration
2034-05-08

AI Technical Summary

Technical Problem

Traditional mesh belt sintering furnace equipment covers a large area and has high energy consumption. The firmness of the metal electrode and silicon wafer is uncontrollable, resulting in difficult contact resistance.

Method used

Design a lamination device for photovoltaic silicon wafer curing, including a chamber, a transmission unit, a heating unit, a cooling unit and a pneumatic control unit. The silicon wafer is conveyed through a high-temperature cloth and heated and cooled in the chamber, using a roller roller The pressure unit carries out slurry curing and controls the air pressure in the chamber.

Benefits of technology

The curing time is shortened, energy consumption is reduced, and the firmness of the photovoltaic silicon wafer electrode lamination is improved, ensuring the lamination effect.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a laminating device for curing a photovoltaic silicon wafer, which comprises a cavity for laminating the silicon wafer and a transmission unit penetrating through the cavity, and a plurality of groups of double-roller rolling units are arranged on the upper side and the lower side of the transmission unit in the cavity; a heating section and a cooling section are separately arranged in the cavity along the running direction of the transmission unit, the heating section of the cavity is provided with a heating unit for heating and curing the silicon wafer on the transmission unit, and the cooling section of the cavity is provided with a cooling unit for cooling the cured silicon wafer; an air pressure control unit used for adjusting the air pressure in the cavity is arranged in the cavity. According to the utility model, the high-temperature cloth conveying mechanism is used for conveying silicon wafers, heating and cooling of the silicon wafers are separated, heating and cooling of the silicon wafers are controlled in a zoning manner, the double-roller rolling unit is used for rolling slurry on the silicon wafers, the curing time is shortened, the energy consumption is reduced, the firmness of photovoltaic silicon wafer electrode lamination is improved, and the lamination effect of the photovoltaic silicon wafers is ensured.
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Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaic silicon wafer production, and more specifically to a laminating device for curing photovoltaic silicon wafers. Background Art

[0002] In the traditional photovoltaic silicon wafer production process, after the silicon wafer is printed, it needs to enter the sintering furnace to dry the slurry printed on the surface of the silicon wafer. The temperature in the furnace is used to volatilize the organic matter in the slurry, and the conductive metal adheres to the surface of the silicon wafer and solidifies to form an electrode. At present, the most widely used in the production of photovoltaic silicon wafers is the mesh belt sintering furnace. The working principle is to place the silicon wafer on the mesh belt and pass through different temperature zones of the sintering furnace in turn to complete the preheating, heating, curing, and cooling processes to form a finished photovoltaic silicon wafer. The insurmountable disadvantage of this mesh belt sintering furnace is that the equipment occupies a large area and has high energy consumption. The metal electrode is cured by the natural volatilization of the slurry, and the firmness of the bond with the silicon wafer cannot be controlled, resulting in difficult to ensure contact resistance. Utility Model Content

[0003] The technical problem to be solved by the utility model is to provide a laminating device for curing photovoltaic silicon wafers, to control the heating and cooling of the silicon wafers by zoning, to shorten the curing time and reduce energy consumption, to improve the firmness of the lamination of the photovoltaic silicon wafer electrodes, and to ensure the lamination effect of the photovoltaic silicon wafers.

[0004] In order to solve the above technical problems, the technical solutions adopted by the present utility model are as follows.

[0005] A laminating device for curing photovoltaic silicon wafers comprises a chamber for laminating silicon wafers and a transmission unit passing through the chamber for conveying the silicon wafers, wherein a plurality of groups of roller pressing units for applying pressure to the silicon wafers on the transmission unit are arranged on the upper and lower sides of the transmission unit in the chamber; a heating section and a cooling section are arranged separately inside the chamber along the running direction of the transmission unit, the heating section of the chamber is provided with a heating unit for heating and curing the silicon wafers on the transmission unit, and the cooling section of the chamber is provided with a cooling unit for cooling the cured silicon wafers; and an air pressure control unit for adjusting the air pressure in the chamber is arranged in the chamber.

[0006] To further optimize the technical solution, the transmission unit includes an upper high-temperature cloth and a lower high-temperature cloth that pass through the interior of the chamber for transmitting silicon wafers. The upper high-temperature cloth forms a closed-loop conveyor belt through the upper transmission active roller and the reversing roller, and the lower high-temperature cloth forms a closed-loop conveyor belt through the lower transmission active roller and the reversing roller. The upper transmission active roller and the lower transmission active roller transmit power through gears with the same number of teeth, and the upper transmission active roller and the lower transmission active roller rotate in opposite directions; the upper high-temperature cloth and the lower high-temperature cloth are respectively provided with tensioning mechanisms for adjusting the high-temperature cloth tension.

[0007] To further optimize the technical solution, the tensioning mechanism includes a tensioning roller connected to the high-temperature cloth and a cylinder for adjusting the position of the tensioning roller.

[0008] To further optimize the technical solution, the contact surfaces of the upper high-temperature cloth and the lower high-temperature cloth with the roller are of a reticulated structure, and the contact surfaces with the silicon wafer are sprayed with a wear-resistant coating.

[0009] To further optimize the technical solution, the pair of rollers rolling unit includes an upper pair of rollers and a lower pair of rollers symmetrically arranged at the top of the upper high-temperature cloth and the bottom of the lower high-temperature cloth, the upper pair of rollers and the lower pair of rollers are respectively tangent to the inner surface of the high-temperature cloth, and the upper pair of rollers is provided with a pair of rollers adjustment mechanism for adjusting the distance between the upper pair of rollers and the lower pair of rollers.

[0010] To further optimize the technical solution, the heating unit includes heating elements evenly distributed on the lower part of the upper high-temperature cloth top layer and the upper part of the lower high-temperature cloth bottom layer, for heating the silicon wafer passing through the chamber, and a radiation cover is provided on the back of the heating element.

[0011] To further optimize the technical solution, the cooling unit includes a blow pipe evenly distributed on the lower part of the top layer of the upper high-temperature cloth and the upper part of the bottom layer of the lower high-temperature cloth and perpendicular to the upper and lower high-temperature cloths, and an exhaust pipe connected to the outside for exhaust, a plurality of spray holes facing the high-temperature cloth are arranged on the blow pipe, and the blow pipe is connected to an external hair dryer.

[0012] To further optimize the technical solution, a funnel-shaped gas collecting hood facing inward is provided on the outer side of the blowing pipe.

[0013] To further optimize the technical solution, the air pressure control unit includes a gas filling pipe arranged in the heating section of the chamber for filling nitrogen into the chamber, the gas filling pipe is provided with a valve for controlling the amount of nitrogen filled, and a gas pressure transmitter for detecting the gas pressure in the chamber is arranged inside the chamber, and the output end of the gas pressure transmitter is connected to the input end of the valve.

[0014] Due to the adoption of the above technical scheme, the technical progress achieved by the present invention is as follows.

[0015] The utility model provides a laminating device for curing photovoltaic silicon wafers, which uses a high-temperature cloth conveying mechanism to convey silicon wafers, separates the heating and cooling of the silicon wafers, controls the heating and cooling of the silicon wafers by zones, and adopts a double-roller pressing unit to roll the slurry on the silicon wafers, thereby shortening the curing time and reducing the energy consumption, improving the firmness of the photovoltaic silicon wafer electrode lamination, and ensuring the lamination effect of the photovoltaic silicon wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the structure of the utility model;

[0017] Figure 2 This is a structural schematic diagram of the roller pressing unit of the utility model;

[0018] Figure 3 This is a schematic diagram of the structure of the air pressure control unit of the utility model;

[0019] Figure 4 It is a schematic diagram of the principle of the tensioning mechanism of the utility model.

[0020] Among them: 1. Chamber, 2. Upper transmission active roller, 3. Lower transmission active roller, 4. Upper high-temperature cloth, 5. Lower high-temperature cloth, 6. Reversing roller, 7. Tensioning mechanism, 8. Upper pair of rollers, 9. Lower pair of rollers, 10. Heating element, 11. Radiation cover, 12. Blowing pipe, 13. Gas collecting cover, 14. Exhaust pipe, 15. Inflating pipe, 16. Silicon wafer, 17. Roller adjustment mechanism, 18. Valve, 19. Gas pressure transmitter, 20. Tensioning roller, 21. Cylinder. DETAILED DESCRIPTION

[0021] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0022] A laminating device for curing photovoltaic silicon wafers, combined with Figures 1 to 4 As shown, it includes a chamber 1, a transmission unit, a roller pressing unit, a heating unit, a cooling unit and an air pressure control unit. The transmission unit is used to convey the silicon wafer 16, the roller pressing unit is arranged in the chamber 1, and is used to apply pressure to the silicon wafer conveyed by the transmission unit, the heating unit is arranged in the heating section of the chamber 1, and is used to heat and solidify the silicon wafer, the cooling unit is arranged in the cooling section of the chamber 1, and is used to cool down the silicon wafer after heating and solidification, and the air pressure control unit is used to adjust the air pressure in the chamber.

[0023] The transmission unit includes an upper high-temperature cloth 4 and a lower high-temperature cloth 5 passing through the interior of the chamber 1. The upper high-temperature cloth 4 forms a closed-loop conveyor belt through the upper transmission active roller 2 and the reversing roller 6. The lower high-temperature cloth 5 forms a closed-loop conveyor belt through the lower transmission active roller 3 and the reversing roller 6. The upper transmission active roller and the lower transmission active roller transmit power through gears with the same number of teeth. The upper transmission active roller 2 and the lower transmission active roller 3 rotate in opposite directions. The silicon wafer 16 is transmitted between the upper high-temperature cloth and the lower high-temperature cloth.

[0024] The upper high temperature cloth 4 and the lower high temperature cloth 5 have a continuous working temperature resistance of more than 260° C. The contact surface with the roller is a mesh structure, and the contact surface with the photovoltaic silicon wafer is sprayed with a wear-resistant coating.

[0025] The upper high temperature cloth 4 and the lower high temperature cloth 5 are respectively provided with a tensioning mechanism 7 for adjusting the tension of the high temperature cloth. The tensioning mechanism 7 comprises a tensioning roller 20 and a cylinder 21. The tensioning roller 20 is connected to the high temperature cloth. The cylinder is used to adjust the position of the tensioning roller. The position of the tensioning roller is adjusted by the length of the telescopic rod of the cylinder to achieve the adjustment of the tension of the high temperature cloth.

[0026] The roller pressing units are arranged in the chamber 1 and are arranged in a plurality of groups, which are symmetrically arranged on the upper and lower sides of the transmission unit to apply pressure to the silicon wafer 16 on the transmission unit to achieve the lamination operation of the silicon wafer.

[0027] The roller pressing unit includes an upper pair of rollers 8 and a lower pair of rollers 9, which are symmetrically arranged up and down and are respectively located at the top of the upper high-temperature cloth and the bottom of the lower high-temperature cloth. The upper pair of rollers 8 are tangent to the surface of the upper high-temperature cloth, and the lower pair of rollers 9 are tangent to the surface of the lower high-temperature cloth. The upper busbar of the lower pair of rollers 9, the busbar of the lower transmission active roller 3, and the busbar of the lower reversing roller 6 are located on the same horizontal plane, so that the front and rear of the lower high-temperature cloth can be ensured to be on the same horizontal plane.

[0028] The upper pair of rollers 8 and the lower pair of rollers 9 are made of quartz ceramics, with steel shaft heads inlaid at both ends. A pair of rollers adjustment mechanism 17 is provided on the upper pair of rollers 8 to adjust the distance between the upper pair of rollers and the lower pair of rollers to adapt to silicon wafers of different thicknesses.

[0029] The roller adjustment mechanism 17 includes a screw and an adjusting nut. The screw is arranged on the base of the upper roller 8, and the adjusting nut is sleeved on the screw. The distance between the upper roller 8 and the lower roller 9 is adjusted by rotating the nut.

[0030] The heating unit is located in the heating section of the chamber, and includes a heating element 10. The heating element 10 is evenly distributed at the lower part of the top layer of the upper high-temperature cloth and the upper part of the bottom layer of the lower high-temperature cloth, and is used to heat the silicon wafer passing through the heating section of the chamber. A radiation cover 11 is provided on the back of the heating element 10 to gather heat on the upper and lower sides of the high-temperature cloth, thereby improving the lamination effect.

[0031] The cooling unit is located in the cooling section of the chamber, and includes a blowing nozzle 12 and an exhaust pipe 14. The blowing nozzle 12 is evenly distributed at the lower part of the top layer of the upper high-temperature cloth and the upper part of the bottom layer of the lower high-temperature cloth and is perpendicular to the upper and lower high-temperature cloths. The blowing nozzle 12 is provided with a plurality of spray holes, which face the high-temperature cloth. The blowing nozzle 12 is connected to an external blower to blow cold air to the silicon wafer on the high-temperature cloth. An air collecting hood 13 is provided on the outside of the blowing nozzle 12. The air collecting hood 13 is funnel-shaped and blows the nozzle toward the inside to increase the blowing force, thereby improving the cooling efficiency.

[0032] The heating section in chamber 1 is lined with all ceramic fibers and coated with steel plates to improve the thermal insulation performance of the heating section. The cooling section of the chamber is a steel plate welding structure to accelerate heat dissipation and improve the efficiency of silicon wafer cooling.

[0033] The air pressure control unit includes an inflation tube 15 and a gas pressure transmitter 19. The inflation tube 15 is arranged in the heating section of the chamber and is used to fill nitrogen into the chamber. A valve 18 is arranged on the inflation tube 15 to control the amount of nitrogen filled. The gas pressure transmitter 19 is arranged inside the chamber and is used to detect the gas pressure in the chamber. The output end of the gas pressure transmitter is connected to the input end of the valve. Protective gas is filled into the chamber through the inflation tube to control the internal pressure of the chamber.

[0034] The utility model comprises the following steps when producing photovoltaic silicon wafers:

[0035] S1. Place the printed and dried silicon wafers with upper and lower films on the feeding end of the transmission unit. The belt transmission line speed can be set within the range of 5 to 30 m / min.

[0036] S2. Since the heating unit is divided into several areas, the temperature and the output power percentage of the heating unit can be set individually. According to the heating curve, the silicon wafer temperature is set at 260℃~300℃ for 5~12S.

[0037] S3. Fill the chamber with nitrogen. Depending on the type of product being produced, the protective gas can also be other inert gases. The pressure in the chamber is set to a positive pressure between 0 and 20 Pa.

[0038] S4. Adjust the upper pressing roller of the roller pressing system to apply positive pressure to the silicon wafer. The existence of positive pressure is beneficial to improving the bonding strength and contact area between the metal and the silicon wafer.

[0039] S5. After passing through the roller pressing system, the high-temperature silicon wafer enters the cooling unit. The blowing pipe in the cooling unit sprays high-speed cold air. The silicon wafer is cooled while moving and is discharged from the chamber outlet. The exhaust pipe of the chamber cooling section sucks the heated air and discharges it out of the chamber. The exhaust pipe keeps the chamber cooling section at a lower temperature.

Claims

1. A laminating device for curing photovoltaic silicon wafers, characterized in that: The invention comprises a chamber (1) for laminating silicon wafers (16) and a transmission unit passing through the chamber (1) for conveying the silicon wafers (16); a plurality of groups of roller pressing units for applying pressure to the silicon wafers on the transmission unit are arranged on the upper and lower sides of the transmission unit in the chamber (1); a heating section and a cooling section are arranged in the chamber (1) along the running direction of the transmission unit; the heating section of the chamber is provided with a heating unit for heating and curing the silicon wafers (16) on the transmission unit, and the cooling section of the chamber (1) is provided with a cooling unit for cooling the cured silicon wafers; and an air pressure control unit for adjusting the air pressure in the chamber is arranged in the chamber (1).

2. A laminating device for curing photovoltaic silicon wafers according to claim 1, characterized in that: The transmission unit comprises an upper high-temperature cloth (4) and a lower high-temperature cloth (5) passing through the interior of a chamber (1) for transmitting a silicon wafer (16); the upper high-temperature cloth (4) forms a closed-loop transmission belt through an upper transmission active roller (2) and a reversing roller (6); the lower high-temperature cloth (5) forms a closed-loop transmission belt through a lower transmission active roller (3) and a reversing roller (6); power is transmitted between the upper transmission active roller and the lower transmission active roller through gears with the same number of teeth; the upper transmission active roller (2) and the lower transmission active roller (3) rotate in opposite directions; and tensioning mechanisms (7) for adjusting the high-temperature cloth tension are respectively provided on the upper high-temperature cloth (4) and the lower high-temperature cloth (5).

3. A laminating device for curing photovoltaic silicon wafers according to claim 2, characterized in that: The tensioning mechanism (7) comprises a tensioning roller (20) abutting against the high-temperature cloth and a cylinder (21) for adjusting the position of the tensioning roller.

4. A laminating device for curing photovoltaic silicon wafers according to claim 2, characterized in that: The contact surfaces of the upper high-temperature cloth (4) and the lower high-temperature cloth (5) with the roller are of a reticular structure, and the contact surfaces with the silicon wafer (16) are sprayed with a wear-resistant coating.

5. A laminating device for curing photovoltaic silicon wafers according to claim 1, characterized in that: The roller pressing unit comprises an upper roller (8) and a lower roller (9) which are symmetrically arranged at the top of the upper high-temperature cloth and the bottom of the lower high-temperature cloth, respectively, the upper roller and the lower roller are tangent to the inner surface of the high-temperature cloth, and the upper roller (8) is provided with a roller adjustment mechanism (17) for adjusting the distance between the upper roller and the lower roller.

6. A laminating device for curing photovoltaic silicon wafers according to claim 1, characterized in that: The heating unit comprises heating elements (10) uniformly distributed on the lower part of the upper high-temperature cloth top layer and the upper part of the lower high-temperature cloth bottom layer for heating silicon wafers passing through the chamber, and a radiation cover (11) is arranged on the back of the heating element (10).

7. A laminating device for curing photovoltaic silicon wafers according to claim 1, characterized in that: The cooling unit comprises a blow pipe (12) evenly distributed on the lower part of the top layer of the upper high-temperature cloth and the upper part of the bottom layer of the lower high-temperature cloth and perpendicular to the upper and lower high-temperature cloths, and an exhaust pipe (14) connected to the outside for exhaust, the blow pipe (12) being provided with a plurality of spray holes facing the high-temperature cloth, and the blow pipe (12) being connected to an external blower.

8. A laminating device for curing photovoltaic silicon wafers according to claim 7, characterized in that: A funnel-shaped gas collecting hood (13) facing inward is arranged on the outer side of the blowing pipe (12).

9. A laminating device for curing photovoltaic silicon wafers according to claim 1, characterized in that: The gas pressure control unit comprises a gas charging pipe (15) arranged in the chamber heating section for charging nitrogen into the chamber, a valve (18) for controlling the amount of nitrogen charged is arranged on the gas charging pipe, a gas pressure transmitter (19) for detecting the gas pressure in the chamber is arranged inside the chamber (1), and the output end of the gas pressure transmitter is connected to the input end of the valve.