V2G power supply system based on silicon carbide field effect transistor

Abstract

The utility model discloses a V2G power supply system based on a silicon carbide field effect transistor. The V2G power supply system comprises an AC power supply end, a DC power supply end, an AC / DC circuit, a first filter circuit, a DC / DC circuit, an LLC resonance circuit, a second filter circuit, an AC / DC driving circuit, a DC / DC driving circuit, an LLC driving circuit, an AC / DC signal sampling circuit, a DC / DC signal sampling circuit, an LLC signal sampling circuit and a digital signal processor circuit. Compared with a power supply system adopting a traditional power device, the power supply system has the advantages of smaller size, higher power density, higher switch working frequency and stronger high-temperature-resistant adaptive capacity of system working.

Description

Technical Field

[0001] The utility model relates to the technical field of electricity, and in particular to a V2G power supply system based on silicon carbide field effect tubes. Background Art

[0002] V2G technology is a technology for transferring energy between electric vehicles and power grids. It uses electric vehicles as energy storage and as a buffer for new energy power generation to access the power grid. When the grid load is too high, the electric vehicle batteries transmit electricity to the grid. When the grid load is low, the electric vehicle stores excess electricity from the grid, achieving peak shaving and valley filling, and improving the operating efficiency of the grid.

[0003] The current V2G power supply system uses a single power module or multiple power modules in parallel. When multiple modules are operated in parallel, each power module can be controlled independently. If any power module fails, the other power modules can work normally. Traditional V2G power modules mainly use IGBT as switching power devices, which have low switching frequency and high switching loss. The mass and volume of a single module power supply are large, and the power density is low. In addition, due to the characteristics of silicon-based semiconductor power devices, the maximum operating temperature of V2G power modules using IGBT is limited, and it is very easy to fail at high working ambient temperatures, reducing the reliability of the system. Therefore, the reliable operation of the power module at high ambient temperatures is also a key factor affecting the reliable operation of the V2G power supply system. Utility Model Content

[0004] The purpose of the utility model is to address the deficiencies of the prior art and provide a V2G power supply system based on silicon carbide field effect transistors. Compared with power supply systems using traditional power devices, the system has a smaller volume, higher power density, higher switching operating frequency, and a stronger ability to adapt to high temperature operation.

[0005] The utility model provides a V2G power supply system based on silicon carbide field effect tube, including an AC power supply end and a DC power supply end, and also includes an AC / DC circuit, a first filtering circuit, a DC / DC circuit, an LLC resonant circuit, a second filtering circuit, an AC / DC driving circuit, a DC / DC driving circuit, an LLC driving circuit, an AC / DC signal sampling circuit, a DC / DC signal sampling circuit, an LLC signal sampling circuit and a digital signal processor circuit;

[0006] The AC power supply end, AC / DC circuit, first filter circuit, DC / DC circuit, LLC resonant circuit, second filter circuit, and DC power supply end are electrically connected in sequence; the AC / DC drive circuit, DC / DC drive circuit, and LLC drive circuit are respectively connected to the AC / DC circuit, DC / DC circuit, and LLC resonant circuit; the AC / DC signal sampling circuit, DC / DC signal sampling circuit, and LLC signal sampling circuit are respectively connected to the AC / DC circuit, DC / DC circuit, and LLC resonant circuit; the digital signal processor circuit is connected to the AC / DC drive circuit, DC / DC drive circuit, LLC drive circuit and the AC / DC signal sampling circuit, DC / DC signal sampling circuit, and LLC signal sampling circuit.

[0007] Furthermore, the AC / DC circuit includes an inductor L A 、Inductance L B 、Inductance L C , MOS tube VT1, MOS tube VT2, MOS tube VT3, MOS tube VT4, MOS tube VT5, MOS tube VT6, and capacitor C1;

[0008] The inductance L A 、Inductance L B 、Inductance L C One end of the inductor is connected to the AC power supply, and the inductor L A The other end is connected to the source of MOS tube VT1 and the drain of MOS tube VT4. B The other end is connected to the source of MOS tube VT2 and the drain of MOS tube VT5. C The other end is connected to the source of the MOS tube VT3 and the drain of the MOS tube VT6; the drain of the MOS tube VT1, the drain of the MOS tube VT2, and the drain of the MOS tube VT3 are connected to the positive electrode of the capacitor C1, and the source of the MOS tube VT4, the source of the MOS tube VT5, and the source of the MOS tube VT6 are connected to the negative electrode of the capacitor C1.

[0009] Furthermore, the first filter circuit includes an inductor L X1 , capacitor C2, inductor L X2 , resistor R1, switch S1 and capacitor C3;

[0010] The inductance L X1 The same-name terminals 1 and 3 are connected to the positive and negative electrodes of capacitor C1 respectively, and the positive electrode of capacitor C2 is connected to the inductor L X1 The other end of the 3-pin and L X2 The 1st pin of the same name terminal is connected, the negative electrode of capacitor C2 is connected to the inductor L X1 The other end of the 4-pin, L X2The 3rd pin of the same name end is connected, the positive electrode of the capacitor C3 is connected to the inductor L X2 The other end of the 3rd pin is connected to the negative electrode of the capacitor C3, one end of the resistor R1 and one end of the switch S1 are connected. The inductor L X2 The 4-pin at the other end is connected to the other end of the resistor R1 and the other end of the switch S1.

[0011] Furthermore, the DC / DC circuit includes MOS tube VT11, MOS tube VT12, MOS tube VT13, MOS tube VT14, inductor L 11 , capacitor C 11 ;

[0012] The positive electrode of the capacitor C3 is connected to the drain of the MOS tube VT11, and the negative electrode of the capacitor C3 is connected to the source of the MOS tube VT13, the source of the MOS tube VT14 and the capacitor C 11 The negative terminal of the capacitor C 11 The positive electrode is connected to the drain of MOS tube VT12, and the inductor L 11 One end of the inductor is connected to the source of the MOS tube VT11 and the drain of the MOS tube VT13. 11 The other end is connected to the source of the MOS tube VT12 and the drain of the MOS tube VT14.

[0013] Furthermore, the LLC resonant circuit includes MOS transistor VT21, MOS transistor VT22, MOS transistor VT23, MOS transistor VT24, inductor L 21 , capacitor C 21 、Transformer T3、Transformer T4、MOS tube VT31、MOS tube VT32、MOS tube VT33、MOS tube VT34、Capacitor C 31 , capacitor C 32 MOS tube VT41, MOS tube VT42, MOS tube VT43, MOS tube VT44, capacitor C 41 , capacitor C 42 , switch S2, switch S3, switch S4;

[0014] The capacitor C 11 The positive electrode of each capacitor is connected to the drain of the MOS tube VT21 and the drain of the MOS tube VT22. 11 The negative electrodes of the capacitors C and VT23 are connected to the source electrodes of the MOS transistors VT23 and VT24 respectively, and the DC / DC circuit is connected to the capacitors C 11 The two ends of the inductor L 21 One end is connected to the source of the MOS tube VT22 and the drain of VT24, and the inductor L 21 The other end is connected to the same end of the primary side of the transformer T3, and the capacitor C 21The negative electrode is connected to the source of the MOS tube VT21 and the drain of the MOS tube VT23, and the capacitor C 21 The positive electrode is connected to the opposite-name terminal of the primary side of the transformer T4, and the opposite-name terminal of the primary side of the transformer T3 is connected to the same-name terminal of the primary side of the transformer T4;

[0015] The same-name end of the secondary side of the transformer T3 is connected to the source of the MOS transistor VT32 and the drain of the MOS transistor VT34, and the opposite-name end of the secondary side of the transformer T3 is connected to the capacitor C 31 The negative terminal of the capacitor C 31 The positive electrode of the capacitor C is connected to the source of the MOS tube VT31 and the drain of the MOS tube VT33; 32 The positive electrode of is connected to the drain of MOS tube VT31, the drain of MOS tube VT32 and one end of switch S3, and the capacitor C 32 The negative electrode is connected to the source of the MOS tube VT33, the source of the MOS tube VT34, one end of the switch S2 and one end of the switch S4;

[0016] The same-name end of the secondary side of the transformer T4 is connected to the source of the MOS transistor VT42 and the drain of the MOS transistor VT44, and the opposite-name end of the secondary side of the transformer T3 is connected to the capacitor C 41 The negative terminal of the capacitor C 41 The positive electrode of the capacitor C is connected to the source of the MOS tube VT41 and the drain of the MOS tube VT43; 42 The positive electrode of capacitor C42 is connected to the drain of MOS tube VT41, the drain of MOS tube VT42, the other end of switch S2 and the other end of switch S3, and the negative electrode of capacitor C42 is connected to the source of MOS tube VT43, the source of MOS tube VT44 and the other end of switch S4.

[0017] Furthermore, the second filter circuit includes a resistor R5, a switch S5, an inductor L X3 , capacitor C4, inductor LX4, capacitor C5, fuse FU2;

[0018] The inductance L X3 The same name terminal 1 pin and capacitor C 32 One end of the resistor R5 is connected in parallel with one end of the switch S5 to connect the capacitor C 42 The other end of the resistor R5 is connected in parallel with the other end of the switch S5. X3 The same name terminal 3 pin; the positive electrode of the capacitor C4 and the inductor L X3 The other end of the 2 pins and L X4 The 1st pin of the same name terminal is connected, the negative electrode of capacitor C4 is connected to the inductor L X3 The other end of the 4-pin, L X4 The 3rd pin of the same name end is connected, the positive electrode of the capacitor C5 is connected to the inductor L X4The other end of the 2nd pin is connected to one end of the fuse FU2, and the negative pole of C5 is connected to the inductor L X4 The 4 pins at the other end are connected; the other end of the fuse FU2 and the negative electrode of the capacitor C5 are connected to the DC power supply end.

[0019] Further, the AC / DC driving circuit is respectively connected to the gate of the MOS tube VT1, the gate of the MOS tube VT2, the gate of the MOS tube VT3, the gate of the MOS tube VT4, the gate of the MOS tube VT5, and the gate of the MOS tube VT6;

[0020] The DC / DC driving circuit is respectively connected to the gate of the MOS tube VT11, the gate of the MOS tube VT12, the gate of the MOS tube VT13, and the gate of the MOS tube VT14;

[0021] The LLC driving circuit is respectively connected to the gate of the MOS tube VT21, the gate of the MOS tube VT22, the gate of the MOS tube VT23, the gate of the MOS tube VT24, the gate of the MOS tube VT31, the gate of the MOS tube VT32, the gate of the MOS tube VT33, the gate of the MOS tube VT34, the gate of the MOS tube VT41, the gate of the MOS tube VT42, the gate of the MOS tube VT43 and the gate of the MOS tube VT44;

[0022] The MOS tube VT1, MOS tube VT2, MOS tube VT3, MOS tube VT4, MOS tube VT5, MOS tube VT6, MOS tube VT11, MOS tube VT12, MOS tube VT13, MOS tube VT14, MOS tube VT21, MOS tube VT22, MOS tube VT23, MOS tube VT24, MOS tube VT31, MOS tube VT32, MOS tube VT33, MOS tube VT34, MOS tube VT41, MOS tube VT42, MOS tube VT43 and MOS tube VT44 are silicon carbide MOSFETs.

[0023] Further, the AC / DC drive circuit, the DC / DC drive circuit, and the LLC drive circuit respectively include a plurality of drive modules, each of which includes an isolation unit, a drive unit, and a resistance unit, and the isolation unit, the drive unit, and the resistance unit are connected in sequence, and the resistance unit of each drive module is correspondingly connected to the gate of the MOS tube VT1, the gate of the MOS tube VT2, the gate of the MOS tube VT3, the gate of the MOS tube VT4, the gate of the MOS tube VT5, the gate of the MOS tube VT6, the gate of the MOS tube VT11, the gate of the MOS tube VT12, the gate of the MOS tube VT13, the gate of the MOS tube VT14, the gate of the MOS tube VT21, and the gate of the MOS tube VT22. The gate of the driving unit is connected to the gate of the MOS tube VT23, the gate of the MOS tube VT24, the gate of the MOS tube VT31, the gate of the MOS tube VT32, the gate of the MOS tube VT33, the gate of the MOS tube VT34, the gate of the MOS tube VT41, the gate of the MOS tube VT42, the gate of the MOS tube VT43 and the gate of the MOS tube VT44; the positive driving voltage range of the driving unit is 18V to 22V or 14V to 16V, and the negative driving voltage range of the driving unit is -2.5V to -4V; the digital signal processor circuit is respectively connected to the isolation unit of each MOS tube driving circuit driving module, and the CMTI of the isolation unit is greater than or equal to 25kV / us.

[0024] Furthermore, the MOS tube VT1, MOS tube VT2, MOS tube VT3, MOS tube VT4, MOS tube VT5, MOS tube VT6, MOS tube VT11, MOS tube VT12, MOS tube VT13, MOS tube VT14, MOS tube VT21, MOS tube VT22, MOS tube VT23, MOS tube VT24, MOS tube VT31, MOS tube VT32, MOS tube VT33, MOS tube VT34, MOS tube VT41, MOS tube VT42, MOS tube VT43 and MOS tube VT44 are silicon carbide MOSFETs with a maximum withstand voltage greater than or equal to 1000V.

[0025] Furthermore, the LLC resonant circuit is composed of two or more resonant units, and the series connection, parallel connection or series-parallel connection between the resonant units is realized through switch control, so as to increase the output voltage value or the output current value of the DC power supply end; the AC / DC circuit, the first filter circuit, the DC / DC circuit, the LLC resonant circuit and the second filter circuit can all realize the bidirectional flow of electric energy.

[0026] The utility model has the following beneficial effects: the V2G power supply system based on silicon carbide field effect tube provided by the utility model has a smaller volume, higher power density, higher switching operating frequency, and stronger high temperature adaptability of the system compared with the power supply system using traditional power devices. The system is composed of AC / DC circuit, DC / DC circuit, LLC resonant circuit, etc. The LLC resonant circuit is composed of 2 or more resonant units, each resonant unit can be connected in series, in parallel, or in series and parallel, to improve the DC output voltage value or DC output current value of the system, so as to be suitable for electric vehicles with different voltage platforms. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 It is a schematic diagram of the power supply system of the utility model.

[0029] Figure 2 It is a circuit diagram of an AC / DC circuit in the power supply system of the utility model.

[0030] Figure 3 It is a circuit diagram of the first filter circuit in the power supply system of the utility model.

[0031] Figure 4 It is a circuit diagram of a DC / DC circuit in the power supply system of the utility model.

[0032] Figure 5 It is a circuit diagram of an LLC resonant circuit in the power supply system of the utility model.

[0033] Figure 6 It is a circuit diagram of the second filter circuit in the power supply system of the utility model.

[0034] Figure 7 It is an overall circuit diagram of the power supply system of the utility model. DETAILED DESCRIPTION

[0035] See also Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7The utility model provides a power supply system for bidirectional conversion of energy between electric vehicles and power grids (Vehicle-to-Grid, V2G) based on silicon carbide field effect transistors (MOSFET). The system includes an AC power supply end and a DC power supply end, an AC / DC circuit, a first filtering circuit, a DC / DC circuit, an LLC resonant circuit, a second filtering circuit, an AC / DC drive circuit, a DC / DC drive circuit, an LLC drive circuit, an AC / DC signal sampling circuit, a DC / DC signal sampling circuit, an LLC signal sampling circuit and a digital signal processor circuit; the AC power supply end, the AC / DC circuit, the first filtering circuit, the DC / DC circuit, the LLC resonant circuit, the second filtering circuit and the DC power supply end are electrically connected in sequence; the AC / DC drive circuit, the DC / DC drive circuit and the LLC drive circuit are respectively connected to the AC / DC circuit, the DC / DC circuit and the LLC resonant circuit; the AC / DC signal sampling circuit, the DC / DC signal sampling circuit and the LLC signal sampling circuit are respectively connected to the AC / DC circuit, the DC / DC circuit and the LLC resonant circuit; the digital signal processor circuit is connected to the AC / DC drive circuit, the DC / DC drive circuit, the LLC drive circuit and the AC / DC signal sampling circuit, the DC / DC signal sampling circuit and the LLC signal sampling circuit. The digital signal processor circuit includes a digital signal processor.

[0036] Specifically, the AC / DC circuit includes an inductor L A 、Inductance L B 、Inductance L C , MOS tube VT1, MOS tube VT2, MOS tube VT3, MOS tube VT4, MOS tube VT5, MOS tube VT6, and capacitor C1; inductor L A 、Inductance L B 、Inductance L C One end of the inductor is connected to the AC power supply, and the inductor L A The other end is connected to the source of MOS tube VT1 and the drain of MOS tube VT4. B The other end is connected to the source of MOS tube VT2 and the drain of MOS tube VT5. C The other end is connected to the source of MOS tube VT3 and the drain of MOS tube VT6; the drain of MOS tube VT1, the drain of MOS tube VT2, and the drain of MOS tube VT3 are connected to the positive electrode of capacitor C1, and the source of MOS tube VT4, the source of MOS tube VT5, and the source of MOS tube VT6 are connected to the negative electrode of capacitor C1.

[0037] Specifically, the first filter circuit includes an inductor L X1 , capacitor C2, inductor L X2 , resistor R1, switch S1 and capacitor C3; inductor L X1The same-name terminals 1 and 3 are connected to the positive and negative electrodes of capacitor C1 respectively, and the positive electrode of capacitor C2 is connected to the inductor L X1 The other end of the 3-pin and L X2 The 1st pin of the same name terminal is connected, the negative electrode of capacitor C2 is connected to the inductor L X1 The other end of the 4-pin, L X2 The 3 pins of the same name end are connected, the positive electrode of capacitor C3 is connected to the inductor L X2 The other end of the 3-pin is connected to the negative electrode of capacitor C3, one end of resistor R1 and one end of switch S1, and the inductor L X2 The 4-pin at the other end is connected to the other end of the resistor R1 and the other end of the switch S1.

[0038] Specifically, the DC / DC circuit includes MOS tube VT11, MOS tube VT12, MOS tube VT13, MOS tube VT14, inductor L 11 , capacitor C 11 The positive electrode of capacitor C3 is connected to the drain of MOS tube VT11, and the negative electrode of capacitor C3 is connected to the source of MOS tube VT13, the source of MOS tube VT14 and capacitor C 11 The negative terminal of capacitor C 11 The positive electrode is connected to the drain of MOS tube VT12, and the inductor L 11 One end of the inductor is connected to the source of the MOS tube VT11 and the drain of the MOS tube VT13. 11 The other end is connected to the source of the MOS tube VT12 and the drain of the MOS tube VT14.

[0039] Specifically, the LLC resonant circuit includes MOS tube VT21, MOS tube VT22, MOS tube VT23, MOS tube VT24, inductor L 21 , capacitor C 21 、Transformer T3、Transformer T4、MOS tube VT31、MOS tube VT32、MOS tube VT33、MOS tube VT34、Capacitor C 31 , capacitor C 32 MOS tube VT41, MOS tube VT42, MOS tube VT43, MOS tube VT44, capacitor C 41 , capacitor C 42 , switch S2, switch S3, switch S4; capacitor C 11 The positive electrode is connected to the drain of MOS tube VT21 and the drain of MOS tube VT22 respectively, and the capacitor C 11 The negative electrode of is connected to the source of MOS tube VT23 and the source of MOS tube VT24 respectively, and the DC / DC circuit is connected to the capacitor C 11 The two ends of the inductor L 21 One end is connected to the source of MOS tube VT22 and the drain of VT24, and the inductor L 21The other end is connected to the same terminal of the primary side of transformer T3, capacitor C 21 The negative electrode is connected to the source of MOS tube VT21 and the drain of MOS tube VT23, and the capacitor C 21 The positive electrode is connected to the opposite-name terminal of the primary side of transformer T4, and the opposite-name terminal of the primary side of transformer T3 is connected to the same-name terminal of the primary side of transformer T4; the same-name terminal of the secondary side of transformer T3 is connected to the source of MOS tube VT32 and the drain of MOS tube VT34, and the opposite-name terminal of the secondary side of transformer T3 is connected to capacitor C 31 The negative electrode of capacitor C 31 The positive electrode of is connected to the source of MOS tube VT31 and the drain of MOS tube VT33; capacitor C 32 The positive electrode of is connected to the drain of MOS tube VT31, the drain of MOS tube VT32 and one end of switch S3, and the capacitor C 32 The negative electrode of the transformer T4 is connected to the source of the MOS tube VT33, the source of the MOS tube VT34, one end of the switch S2 and one end of the switch S4; the same-name end of the secondary side of the transformer T4 is connected to the source of the MOS tube VT42 and the drain of the MOS tube VT44, and the opposite-name end of the secondary side of the transformer T3 is connected to the capacitor C 41 The negative electrode of capacitor C 41 The positive electrode of is connected to the source of MOS tube VT41 and the drain of MOS tube VT43; capacitor C 42 The positive electrode of capacitor C42 is connected to the drain of MOS tube VT41, the drain of MOS tube VT42, the other end of switch S2 and the other end of switch S3, and the negative electrode of capacitor C42 is connected to the source of MOS tube VT43, the source of MOS tube VT44 and the other end of switch S4.

[0040] Specifically, the second filter circuit includes a resistor R5, a switch S5, an inductor L X3 , capacitor C4, inductor LX4, capacitor C5, fuse FU2; inductor L X3 The same name terminal 1 pin and capacitor C 32 One end of the resistor R5 is connected to the positive electrode of the switch S5 in parallel with the capacitor C 42 The other end of the resistor R5 is connected in parallel with the other end of the switch S5. X3 The same name terminal 3 pin; capacitor C4 positive electrode and inductor L X3 The other end of the 2 pins and L X4 The 1st pin of the same name terminal is connected, the negative electrode of capacitor C4 is connected to the inductor L X3 The other end of the 4-pin, L X4 The 3rd pin of the same name end is connected, the positive electrode of capacitor C5 is connected to the inductor L X4 The other end of the 2nd pin is connected to one end of the fuse FU2, and the negative pole of C5 is connected to the inductor L X4 The 4 pins at the other end are connected; the other end of the fuse FU2 and the negative electrode of the capacitor C5 are connected to the DC power supply end.

[0041] Specifically, the AC / DC drive circuit is respectively connected to the gate of the MOS tube VT1, the gate of the MOS tube VT2, the gate of the MOS tube VT3, the gate of the MOS tube VT4, the gate of the MOS tube VT5, and the gate of the MOS tube VT6; the DC / DC drive circuit is respectively connected to the gate of the MOS tube VT11, the gate of the MOS tube VT12, the gate of the MOS tube VT13, and the gate of the MOS tube VT14; the LLC drive circuit is respectively connected to the gate of the MOS tube VT21, the gate of the MOS tube VT22, the gate of the MOS tube VT23, the gate of the MOS tube VT24, the gate of the MOS tube VT31, the gate of the MOS tube VT32, the gate of the MOS tube VT33, the gate of the MOS tube VT34, The gate of MOS tube VT41, the gate of MOS tube VT42, the gate of MOS tube VT43 and the gate of MOS tube VT44; MOS tube VT1, MOS tube VT2, MOS tube VT3, MOS tube VT4, MOS tube VT5, MOS tube VT6, MOS tube VT11, MOS tube VT12, MOS tube VT13, MOS tube VT14, MOS tube VT21, MOS tube VT22, MOS tube VT23, MOS tube VT24, MOS tube VT31, MOS tube VT32, MOS tube VT33, MOS tube VT34, MOS tube VT41, MOS tube VT42, MOS tube VT43 and MOS tube VT44 are silicon carbide MOSFETs.

[0042] Specifically, the AC / DC drive circuit, the DC / DC drive circuit, and the LLC drive circuit respectively include several drive modules, each of which includes an isolation unit, a drive unit, and a resistance unit. The isolation unit, the drive unit, and the resistance unit are connected in sequence, and the resistance unit of each drive module corresponds to the gate of the MOS tube VT1, the gate of the MOS tube VT2, the gate of the MOS tube VT3, the gate of the MOS tube VT4, the gate of the MOS tube VT5, the gate of the MOS tube VT6, the gate of the MOS tube VT11, the gate of the MOS tube VT12, the gate of the MOS tube VT13, the gate of the MOS tube VT14, the gate of the MOS tube VT21, and the gate of the MOS tube VT22. the gate of the MOS tube VT23, the gate of the MOS tube VT24, the gate of the MOS tube VT31, the gate of the MOS tube VT32, the gate of the MOS tube VT33, the gate of the MOS tube VT34, the gate of the MOS tube VT41, the gate of the MOS tube VT42, the gate of the MOS tube VT43 and the gate of the MOS tube VT44; the positive driving voltage range of the driving unit is 18V to 22V or 14V to 16V, and the negative driving voltage range of the driving unit is -2.5V to -4V; the digital signal processor circuit is respectively connected to the isolation unit of each MOS tube driving circuit driving module, and the CMTI of the isolation unit is greater than or equal to 25kV / us. MOS tube VT1, MOS tube VT2, MOS tube VT3, MOS tube VT4, MOS tube VT5, MOS tube VT6, MOS tube VT11, MOS tube VT12, MOS tube VT13, MOS tube VT14, MOS tube VT21, MOS tube VT22, MOS tube VT23, MOS tube VT24, MOS tube VT31, MOS tube VT32, MOS tube VT33, MOS tube VT34, MOS tube VT41, MOS tube VT42, MOS tube VT43 and MOS tube VT44 are silicon carbide MOSFETs with a maximum withstand voltage greater than or equal to 1000V.

[0043] The LLC resonant circuit is composed of two or more resonant units, and the series connection, parallel connection or series-parallel connection between the resonant units is realized through switch control to increase the output voltage value or the output current value of the DC power supply end; the AC / DC circuit, the first filter circuit, the DC / DC circuit, the LLC resonant circuit and the second filter circuit can all realize the bidirectional flow of electric energy.

[0044] When the electric vehicle is used as an energy storage, the electric energy flows from the AC power supply end to the DC power supply end. The power grid passes through the AC power supply end and is rectified by the AC / DC circuit. After filtering, it is processed by the DC / DC circuit for DC voltage step-up and step-down. After that, it is converted by the LLC resonant circuit and filtered. After that, it is output to the electric vehicle through the DC power supply end. The digital signal processor circuit samples the voltage and current output by the AC / DC circuit, the DC / DC circuit, and the LLC resonant circuit, and sends a driving signal to the driving circuit according to the sampling result to control the AC / DC circuit, the DC / DC circuit, and the LLC resonant circuit.

[0045] When an electric vehicle discharges to the grid, electric energy flows from the DC power supply end to the AC power supply end. The DC power of the electric vehicle is filtered through the DC power supply end, and then converted through the LLC resonant circuit. The DC power is then bucked and stepped up by the DC / DC circuit. After filtering, it is inverted into AC power with the same frequency and voltage as the grid through the AC / DC circuit, and connected to the grid through the AC power supply end. The digital signal processor circuit samples the voltage and current output by the LLC resonant circuit, the DC / DC circuit, the AC / DC circuit, and the voltage of the grid, and sends a drive signal to the drive circuit based on the sampling result to control the AC / DC circuit, the DC / DC circuit, and the LLC resonant circuit.

[0046] The AC / DC circuit is a four-quadrant PWM converter. When the electric energy flows from the AC power supply to the DC power supply, it works in the rectification mode. The AC / DC circuit passes through the inductor L A 、Inductance L B And the inductor L C Connected to the AC grid, converted into DC power by the circuit, connected to the inductor L of the first filter circuit through the capacitor C1 X1 When the electric energy flows from the DC power supply end to the AC power supply end, it works in the inverter mode. The AC / DC circuit is connected to the inductor L of the first filter circuit through the capacitor C1. X1 , converted into AC power through the circuit, and then passed through the inductor L A 、Inductance L B And the inductor L C Connected to the AC grid; the circuit adopts the AC side current closed loop and DC side voltage closed loop control mode, and can adopt a variety of different modulation methods to realize the function of converting AC power into DC power. By adopting the improved SVPWM space vector modulation, compared with the traditional SPWM modulation, under the constant grid AC voltage, the AC / DC circuit can output a wider range of DC voltage; when a wider DC voltage is input, the AC / DC circuit can invert constant voltage, constant frequency and AC power that is consistent with the grid phase. Effectively reduce the dependence on the AC side inductance; the circuit structure is simple, and while effectively reducing the volume and mass of the AC / DC circuit unit, it can reduce the system cost.

[0047] The DC / DC circuit is a bidirectional DC step-up and step-down circuit, one end of which is connected to C3 of the first filter circuit, and the other end is connected to MOS tubes VT21 and MOS tubes VT23 of the LLC resonant circuit; when electric energy flows from the AC power supply end to the DC power supply end, the DC / DC circuit is connected to the capacitor C3 of the first filter circuit through MOS tubes VT11 and MOS tubes VT13, and after the DC / DC circuit step-up or step-down conversion, the capacitor C 11 The MOS tubes VT21 and MOS tubes VT23 connected to the LLC resonant circuit provide DC power to the LLC resonant circuit. When the electric energy flows from the DC power supply end to the AC power supply end, the DC / DC circuit passes through the capacitor C 11 The MOS tubes VT21 and MOS tubes VT23 connected to the LLC resonant circuit are connected to the capacitor C3 of the first filter circuit through the MOS tubes VT11 and MOS tubes VT13 after the DC / DC circuit step-up or step-down conversion, so as to provide direct current for the first filter circuit; only one inductor is needed to realize the bidirectional flow of direct current, which can effectively reduce the inductance L 11 Inductance value, reduce the inductance L 11 volume.

[0048] The LLC resonant circuit is an isolated bidirectional DC / DC converter using soft switching technology. Taking the LLC resonant circuit with two transformers as an example, one end of the LLC resonant circuit is connected to the DC / DC circuit C. 11 , the other end is connected to the second filter circuit; transformer T3, capacitor C 31 MOS tube VT31, MOS tube VT32, MOS tube VT33, MOS tube VT34 and capacitor C 32 The transformer T3 resonant unit, transformer T4, capacitor C 41 MOS tube VT41, MOS tube VT42, MOS tube VT43, MOS tube VT44 and capacitor C 42 The transformer T4 resonant unit is formed; when the electric energy flows from the AC power supply end to the DC power supply end, the LLC circuit is connected to the DC / DC circuit through the MOS tube VT21 and the MOS tube VT23, and after being transformed by the transformer T3 resonant unit and the transformer T4 resonant unit of the LLC resonant circuit, it is connected in series or in parallel to the L of the second filter circuit. X2 , providing DC power to the second filter circuit; when the electric energy flows from the DC power supply end to the AC power supply end, the LLC circuit passes through the capacitor C 32 , capacitor C 42 After the LLC resonant circuit transformation, it is connected to the C of the DC / DC circuit through MOS tubes VT21 and MOS tubes VT23. 11 , providing direct current for the DC / DC circuit;

[0049] The transformer T3 resonant unit and the transformer T4 resonant unit are independent resonant units with the same parameters. When the switch S2 is closed, the transformer T3 resonant unit is connected in series with the transformer T4 resonant unit to increase the input / output voltage of the DC power supply end. When the switches S3 and S4 are closed, the transformer T3 resonant unit and the transformer T4 resonant unit are connected in parallel to increase the input / output current of the DC power supply end. The transformer T3 resonant unit and the transformer T4 resonant unit adopt zero voltage turn-on and zero current turn-off soft switching technology for the primary side circuit of the transformer T3 resonant unit and the secondary side circuit, which reduces the loss of the switch tube and improves the energy conversion efficiency and power density of the circuit.

[0050] The circuit topology of the utility model is composed of three-level independent bidirectional power supply circuits, which realizes the bidirectional flow of electric energy between the AC power of the power grid and the DC power of the electric vehicle; the LLC resonant circuit can include several resonant units, and the series connection, parallel connection and series-parallel connection between the resonant units can be realized through switches to increase the voltage or current at the DC power supply end; the transformer T3 and the transformer T4 of the LLC resonant circuit adopt a sandwich winding method to increase the electromagnetic coupling between the primary and secondary sides of the transformer, reduce the leakage inductance of the transformer, and thus reduce the voltage spike on the switch tube on the secondary side of the transformer.

[0051] The switch tubes in the AC / DC circuit, DC / DC circuit, and LLC resonant circuit of the utility model all use silicon carbide MOS tubes. Compared with the technical solutions of silicon devices, the switching frequency of the inverter full bridge, BUCK-BOOST step-up and step-down circuit, and two-level phase-shifted full bridge soft switch converter of the silicon carbide technical solution is at least 4 times higher, which greatly reduces the volume of magnetic components such as switching transformers and inductors, and inductors and capacitors in filter circuits. In terms of control, the technical solution adopts a hybrid control strategy combining phase shift control and pulse width modulation control. Compared with simple phase shift control, the hybrid control strategy expands the range of soft switching of silicon carbide MOS tubes.

[0052] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0053] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example.

[0054] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. A V2G power supply system based on silicon carbide field effect transistor, comprising an AC power supply end and a DC power supply end, characterized in that: It also includes an AC / DC circuit, a first filtering circuit, a DC / DC circuit, an LLC resonant circuit, a second filtering circuit, an AC / DC driving circuit, a DC / DC driving circuit, an LLC driving circuit, an AC / DC signal sampling circuit, a DC / DC signal sampling circuit, an LLC signal sampling circuit, and a digital signal processor circuit; The AC power supply end, AC / DC circuit, first filter circuit, DC / DC circuit, LLC resonant circuit, second filter circuit, and DC power supply end are electrically connected in sequence; the AC / DC drive circuit, DC / DC drive circuit, and LLC drive circuit are respectively connected to the AC / DC circuit, DC / DC circuit, and LLC resonant circuit; the AC / DC signal sampling circuit, DC / DC signal sampling circuit, and LLC signal sampling circuit are respectively connected to the AC / DC circuit, DC / DC circuit, and LLC resonant circuit; the digital signal processor circuit is connected to the AC / DC drive circuit, DC / DC drive circuit, LLC drive circuit and the AC / DC signal sampling circuit, DC / DC signal sampling circuit, and LLC signal sampling circuit.

2. A V2G power supply system based on silicon carbide field effect transistor according to claim 1, characterized in that: The AC / DC circuit includes an inductor L A 、Inductance L B 、Inductance L C , MOS tube VT1, MOS tube VT2, MOS tube VT3, MOS tube VT4, MOS tube VT5, MOS tube VT6, and capacitor C1; The inductance L A 、Inductance L B 、Inductance L C One end of the inductor is connected to the AC power supply, and the inductor L A The other end is connected to the source of MOS tube VT1 and the drain of MOS tube VT4. B The other end is connected to the source of MOS tube VT2 and the drain of MOS tube VT5. C The other end is connected to the source of the MOS tube VT3 and the drain of the MOS tube VT6; the drain of the MOS tube VT1, the drain of the MOS tube VT2, and the drain of the MOS tube VT3 are connected to the positive electrode of the capacitor C1, and the source of the MOS tube VT4, the source of the MOS tube VT5, and the source of the MOS tube VT6 are connected to the negative electrode of the capacitor C1.

3. A V2G power supply system based on silicon carbide field effect transistor as claimed in claim 2, characterized in that: The first filter circuit includes an inductor L X1 , capacitor C2, inductor L X2 , resistor R1, switch S1 and capacitor C3; The inductance L X1 The same-name terminals 1 and 3 are connected to the positive and negative electrodes of capacitor C1 respectively, and the positive electrode of capacitor C2 is connected to the inductor L X1 The other end of the 3-pin and L X2 The 1st pin of the same name terminal is connected, the negative electrode of capacitor C2 is connected to the inductor L X1 The other end of the 4-pin, L X2 The 3rd pin of the same name end is connected, the positive electrode of the capacitor C3 is connected to the inductor L X2 The other end of the 3rd pin is connected to the negative electrode of the capacitor C3, one end of the resistor R1 and one end of the switch S1 are connected. The inductor L X2 The 4-pin at the other end is connected to the other end of the resistor R1 and the other end of the switch S1.

4. A V2G power supply system based on silicon carbide field effect transistor as claimed in claim 3, characterized in that: The DC / DC circuit includes MOS tube VT11, MOS tube VT12, MOS tube VT13, MOS tube VT14, inductor L 11 , capacitor C 11 ; The positive electrode of the capacitor C3 is connected to the drain of the MOS tube VT11, and the negative electrode of the capacitor C3 is connected to the source of the MOS tube VT13, the source of the MOS tube VT14 and the capacitor C 11 The negative terminal of the capacitor C 11 The positive electrode is connected to the drain of MOS tube VT12, and the inductor L 11 One end of the inductor is connected to the source of the MOS tube VT11 and the drain of the MOS tube VT13. 11 The other end is connected to the source of the MOS tube VT12 and the drain of the MOS tube VT14.

5. A V2G power supply system based on silicon carbide field effect transistor as claimed in claim 4, characterized in that: The LLC resonant circuit includes MOS tube VT21, MOS tube VT22, MOS tube VT23, MOS tube VT24, inductor L 21 , capacitor C 21 、Transformer T3、Transformer T4、MOS tube VT31、MOS tube VT32、MOS tube VT33、MOS tube VT34、Capacitor C 31 , capacitor C 32 MOS tube VT41, MOS tube VT42, MOS tube VT43, MOS tube VT44, capacitor C 41 , capacitor C 42 , switch S2, switch S3, switch S4; The capacitor C 11 The positive electrode of each capacitor is connected to the drain of the MOS tube VT21 and the drain of the MOS tube VT22. 11 The negative electrodes of the capacitors C and VT23 are connected to the source electrodes of the MOS transistors VT23 and VT24 respectively, and the DC / DC circuit is connected to the capacitors C 11 The two ends of the inductor L 21 One end is connected to the source of the MOS tube VT22 and the drain of VT24, and the inductor L 21 The other end is connected to the same end of the primary side of the transformer T3, and the capacitor C 21 The negative electrode is connected to the source of the MOS tube VT21 and the drain of the MOS tube VT23, and the capacitor C 21 The positive electrode is connected to the opposite-name terminal of the primary side of the transformer T4, and the opposite-name terminal of the primary side of the transformer T3 is connected to the same-name terminal of the primary side of the transformer T4; The same-name end of the secondary side of the transformer T3 is connected to the source of the MOS transistor VT32 and the drain of the MOS transistor VT34, and the opposite-name end of the secondary side of the transformer T3 is connected to the capacitor C 31 The negative terminal of the capacitor C 31 The positive electrode of the capacitor C is connected to the source of the MOS tube VT31 and the drain of the MOS tube VT33; 32 The positive electrode of is connected to the drain of MOS tube VT31, the drain of MOS tube VT32 and one end of switch S3, and the capacitor C 32 The negative electrode is connected to the source of the MOS tube VT33, the source of the MOS tube VT34, one end of the switch S2 and one end of the switch S4; The same-name end of the secondary side of the transformer T4 is connected to the source of the MOS transistor VT42 and the drain of the MOS transistor VT44, and the opposite-name end of the secondary side of the transformer T3 is connected to the capacitor C 41 The negative terminal of the capacitor C 41 The positive electrode of the capacitor C is connected to the source of the MOS tube VT41 and the drain of the MOS tube VT43; 42 The positive electrode of capacitor C42 is connected to the drain of MOS tube VT41, the drain of MOS tube VT42, the other end of switch S2 and the other end of switch S3, and the negative electrode of capacitor C42 is connected to the source of MOS tube VT43, the source of MOS tube VT44 and the other end of switch S4.

6. A V2G power supply system based on silicon carbide field effect transistor as claimed in claim 5, characterized in that: The second filter circuit includes a resistor R5, a switch S5, an inductor L X3 , capacitor C4, inductor L X4 , capacitor C5, fuse FU2; The inductance L X3 The same name terminal 1 pin and capacitor C 32 One end of the resistor R5 is connected to the positive electrode of the switch S5 in parallel with the capacitor C 42 The other end of the resistor R5 is connected in parallel with the other end of the switch S5. X3 The same name terminal 3 pin; the positive electrode of the capacitor C4 and the inductor L X3 The other end of the 2 pins and L X4 The 1st pin of the same name terminal is connected, the negative electrode of capacitor C4 is connected to the inductor L X3 The other end of the 4-pin, inductor L X4 The 3rd pin of the same name end is connected, the positive electrode of the capacitor C5 is connected to the inductor L X4 The other end of the 2nd pin is connected to one end of the fuse FU2, and the negative pole of C5 is connected to the inductor L X4 The 4 pins at the other end are connected; the other end of the fuse FU2 and the negative electrode of the capacitor C5 are connected to the DC power supply end.

7. A V2G power supply system based on silicon carbide field effect transistor according to claim 6, characterized in that: The AC / DC driving circuit is respectively connected to the gate of the MOS tube VT1, the gate of the MOS tube VT2, the gate of the MOS tube VT3, the gate of the MOS tube VT4, the gate of the MOS tube VT5, and the gate of the MOS tube VT6; The DC / DC driving circuit is respectively connected to the gate of the MOS tube VT11, the gate of the MOS tube VT12, the gate of the MOS tube VT13, and the gate of the MOS tube VT14; The LLC driving circuit is respectively connected to the gate of the MOS tube VT21, the gate of the MOS tube VT22, the gate of the MOS tube VT23, the gate of the MOS tube VT24, the gate of the MOS tube VT31, the gate of the MOS tube VT32, the gate of the MOS tube VT33, the gate of the MOS tube VT34, the gate of the MOS tube VT41, the gate of the MOS tube VT42, the gate of the MOS tube VT43 and the gate of the MOS tube VT44.

8. A V2G power supply system based on silicon carbide field effect transistor as claimed in claim 7, characterized in that: The AC / DC drive circuit, the DC / DC drive circuit, and the LLC drive circuit respectively include a plurality of drive modules, each of which includes an isolation unit, a drive unit, and a resistance unit. The isolation unit, the drive unit, and the resistance unit are connected in sequence, and the resistance unit of each drive module is correspondingly connected to the gate of the MOS tube VT1, the gate of the MOS tube VT2, the gate of the MOS tube VT3, the gate of the MOS tube VT4, the gate of the MOS tube VT5, the gate of the MOS tube VT6, the gate of the MOS tube VT11, the gate of the MOS tube VT12, the gate of the MOS tube VT The digital signal processor circuit is connected to the isolation unit of each MOS tube driving circuit driving module.

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