Vertical lifting device of monocrystalline silicon furnace

Abstract

The utility model discloses a vertical lifting device of a monocrystalline silicon furnace, which comprises a heating furnace body, an auxiliary chamber fixedly connected with the heating furnace body, a crystallization cavity arranged in the auxiliary chamber, two positioning grooves which are in bilateral symmetry and are communicated with the crystallization cavity, a positioning column fixedly connected in each positioning groove, a lifting head arranged in the crystallization cavity, and a lifting rod arranged in the lifting head. The lifting head is located at the center of the crystallization cavity and is in threaded connection with an internal thread annular plate, a connecting plate is connected in each positioning groove in an up-and-down sliding mode, the two connecting plates are fixedly connected with the internal thread annular plate, positioning holes are formed in the connecting plates, and the connecting plates are in up-and-down sliding connection with the positioning columns through the positioning holes; the lifting head can be pulled to move upwards through the coiling machine, the lifting head is in threaded connection with the internal thread annular plate, and when the lifting head moves upwards, the lifting head keeps vertically moving upwards through the connecting plate and the positioning column, so that a single crystal rod crystallized on a seed crystal is crystallized in the vertical direction, and a complete columnar silicon single crystal rod is formed.

Description

Technical Field

[0001] The utility model relates to the field of single crystal silicon, in particular to a vertical pulling device for a single crystal silicon furnace. Background Art

[0002] After the single crystal silicon is melted in the crucible, the silicon single crystal rod needs to be pulled upward with a pulling head. During the pulling process, it continues to crystallize, thus forming a complete single crystal rod. In this process, it is necessary to ensure that the pull rope is pulled vertically upward when pulling the pulling head upward, otherwise it will cause the single crystal silicon rod to tilt. An auxiliary positioning device is used to position the pulling head when it moves. Utility Model Content

[0003] The utility model aims to provide a vertical pulling device for a single crystal silicon furnace to solve the problems raised in the above background technology.

[0004] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a vertical pulling device for a single crystal silicon furnace, comprising a heating furnace body, the heating furnace body is fixedly connected with a sub-chamber, the sub-chamber is decorated with a crystallization cavity, the sub-chamber is provided with two left-right symmetrical positioning grooves connected with the crystallization cavity, each of the positioning grooves is fixedly connected with a positioning column, a pulling head is provided in the crystallization cavity, the pulling head is located at the center of the crystallization cavity, the pulling head is threadedly connected with an internal threaded annular plate, each of the positioning grooves is slidably connected with a connecting plate, the two connecting plates are fixedly connected to the internal threaded annular plate, and the connecting plates are provided with positioning holes, the connecting plates are slidably connected to the positioning columns up and down through the positioning holes, so that when the lifting head moves up, the vertical upward movement of the lifting head can be guaranteed by the positioning column.

[0005] Advantageously, the upper end surface of the auxiliary chamber is fixedly connected to a top cover plate, and the upper end surface of the top cover plate is fixedly connected to a winding machine;

[0006] Advantageously, the top cover plate is provided with a through hole, the winding machine is dynamically connected to a pull rope passing through the through hole, and the other end of the pull rope is fixedly connected to the lifting head, so that the winding machine can drive the lifting head to move upward;

[0007] Advantageously, a seed crystal is fixedly connected to the lower end surface of the lifting head, and the seed crystal extends into the molten silicon solution so that the single crystal silicon can adhere to its surface for crystallization;

[0008] Advantageously, four support rods are fixedly connected between the lower end surface of the top cover plate and the side surface of the auxiliary chamber, and the support rods play a supporting role.

[0009] Compared with the prior art, the beneficial effects of the utility model are:

[0010] The utility model is provided with an internal threaded annular plate, a positioning column and a pulling head. The pulling head can be pulled up by a winding machine. The pulling head is threadedly connected to the internal threaded annular plate. When the pulling head moves upward, it is kept moving vertically upward by the connecting plate and the positioning column, thereby ensuring that the single crystal rod crystallized on the seed crystal is crystallized in the vertical direction to form a complete columnar silicon single crystal rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a three-dimensional schematic diagram of the utility model;

[0012] Figure 2 for Figure 1 A top view of

[0013] Figure 3 for Figure 2 AA cross-sectional diagram of ;

[0014] Figure 4 for Figure 4 A partial enlarged schematic diagram of

[0015] Figure 5 It is a three-dimensional schematic cross-sectional view of the auxiliary chamber of the utility model;

[0016] Figure 6 It is a three-dimensional schematic diagram of the pulling head of the utility model.

[0017] In the figure: 100, heating furnace body; 101, auxiliary chamber; 102, top cover plate; 103, support rod; 104, winding machine; 105, positioning groove; 106, positioning column; 107, pulling head; 108, crystallization chamber; 109, connecting plate; 110, internal threaded annular plate; 111, seed crystal; 112, through hole; 113, pull rope; 114, positioning hole. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail in combination with the embodiments below. It should be understood that the specific embodiments described here are only used to explain the utility model, and are not used to limit the utility model. Example

[0019] See also Figure 1-6The utility model provides a technical solution: a vertical pulling device for a single crystal silicon furnace, comprising a heating furnace body 100, the heating furnace body 100 is fixedly connected with a sub-chamber 101, the sub-chamber 101 is internally provided with a crystallization cavity 108, the sub-chamber 101 is provided with two symmetrical positioning grooves 105 connected with the crystallization cavity 108, each positioning groove 105 is fixedly connected with a positioning column 106, the crystallization cavity 108 is provided with a pulling head 107, the pulling head 107 is located in the crystallization cavity 108 At the center, the lifting head 107 is threadedly connected to an internally threaded annular plate 110, and a connecting plate 109 is slidably connected up and down in each of the positioning grooves 105. The two connecting plates 109 are fixedly connected to the internally threaded annular plate 110, and the connecting plates 109 are provided with positioning holes 114. The connecting plates 109 are slidably connected up and down with the positioning columns 106 through the positioning holes 114, so that when the lifting head 107 moves upward, the positioning columns 106 can ensure the vertical upward movement of the lifting head 107.

[0020] The upper end surface of the auxiliary chamber 101 is fixedly connected to a top cover plate 102, and the upper end surface of the top cover plate 102 is fixedly connected to a winding machine 104;

[0021] The top cover plate 102 is provided with a through hole 112, and the wire reel 104 is connected to a pull rope 113 passing through the through hole 112, and the other end of the pull rope 113 is fixedly connected to the lifting head 107, so that the wire reel 104 can drive the lifting head 107 to move upward;

[0022] The lower end surface of the pulling head 107 is fixedly connected with a seed crystal 111, and the seed crystal 111 extends into the molten silicon solution so that the single crystal silicon can adhere to its surface for crystallization;

[0023] Four support rods 103 are fixedly connected between the lower end surface of the top cover plate 102 and the side surface of the auxiliary chamber 101, and the support rods 103 play a supporting role.

[0024] Working principle:

[0025] Initially, the lifting head 107 is located at the bottom of the crystallization chamber 108, and the seed crystal 111 is located in the crucible filled with liquid silicon in the heating furnace body 100;

[0026] Then start the winding machine 104, and first slowly pull the pulling head 107 upwards by the pull rope 113. After more single crystal silicon is attached to the seed crystal 111, the pulling head 107 is pulled upwards by the pull rope 113 more quickly. When the pulling head 107 moves upwards, it drives the internal threaded annular plate 110 upwards, and the internal threaded annular plate 110 drives the connecting plate 109 upwards. The connecting plate 109 moves upwards along the positioning column 106, which can ensure the verticality of the pulling head 107 when it moves upward, thereby ensuring that the crystallized single crystal rod will not tilt and can form a complete columnar silicon single crystal rod.

[0027] It is obvious to those skilled in the art that various modifications and variations may be made to the disclosed embodiments. Other embodiments will be readily apparent to those skilled in the art in view of the specification and practice of the disclosed system. It is intended that the specification and examples be considered exemplary only, with the true scope of protection being determined by the appended claims and their equivalents.

Claims

1. A vertical pulling device for a single crystal silicon furnace, comprising a heating furnace body (100), characterized in that: The heating furnace body (100) is fixedly connected to a sub-chamber (101), and a crystallization chamber (108) is arranged inside the sub-chamber (101). The sub-chamber (101) is provided with two symmetrical positioning grooves (105) in communication with the crystallization chamber (108), and each positioning groove (105) is fixedly connected to a positioning column (106). A lifting head (107) is provided in the crystallization chamber (108), and the lifting head (107) is located at the center of the crystallization chamber (108). The lifting head (107) is threadedly connected to an internal threaded annular plate (110), and each positioning groove (105) is slidably connected to a connecting plate (109) in an up-and-down manner. The two connecting plates (109) are fixedly connected to the internal threaded annular plate (110), and each connecting plate (109) is provided with a positioning hole (114). The connecting plate (109) is slidably connected to the positioning column (106) through the positioning hole (114).

2. A vertical pulling device for a single crystal silicon furnace according to claim 1, characterized in that: The upper end surface of the auxiliary chamber (101) is fixedly connected to a top cover plate (102), and the upper end surface of the top cover plate (102) is fixedly connected to a wire winding machine (104).

3. A vertical pulling device for a single crystal silicon furnace according to claim 2, characterized in that: The top cover plate (102) is provided with a through hole (112), and the winding machine (104) is powered by a pull rope (113) passing through the through hole (112), and the other end of the pull rope (113) is fixedly connected to the pulling head (107).

4. The vertical pulling device for a single crystal silicon furnace according to claim 3, characterized in that: The lower end surface of the pulling head (107) is fixedly connected to a seed crystal (111).

5. The vertical pulling device for a single crystal silicon furnace according to claim 4, characterized in that: Four support rods (103) are fixedly connected between the lower end surface of the top cover plate (102) and the side surface of the auxiliary chamber (101).

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