Power semiconductor surface passivation structure

Abstract

The utility model discloses a surface passivation structure of a power semiconductor. The surface passivation structure comprises a passivation layer; the inner wall of the anti-impact mechanism is in sliding connection with the outer wall of the passivation layer, and the top of the supporting layer is fixedly connected with the bottom of the passivation layer; the top of the rubber layer is fixedly connected with the bottom of the supporting layer; the outer wall of the fixing layer is fixedly connected with the inner wall of the anti-impact mechanism; the bottom of the buffer mechanism is fixedly connected with the inner wall of the bottom of the fixing layer, and the buffer mechanism comprises a buffer plate. The power semiconductor device relates to the technical field of power semiconductors, through the arrangement of the buffer mechanism, the supporting block abuts against the buffer pad, so that impact force is relieved preliminarily, and under continuous pressing of the impact force, the impact force can be prevented from falling off; the buffer plate moves towards the buffer pad and presses the elastic plate, so that the elastic plate deforms, the impact force is further relieved, and the purpose of the passivation structure on the surface of the power semiconductor is achieved.

Description

Technical Field

[0001] The utility model relates to the technical field of power semiconductors, in particular to a power semiconductor surface passivation structure. Background Art

[0002] Surface passivation technology is an important process in the manufacturing process of semiconductor devices, and has a significant impact on the electrical properties and reliability of the devices. Currently, some commonly used passivation materials include silicon dioxide, phosphosilicate glass, silicon nitride, silicon oxynitride, aluminum oxide, semi-insulating polysilicon, polyimide (PI), glass frit, etc. These media have different properties, passivation protection functions and effects. If the above media are used alone for passivation protection, there are limitations. Therefore, in semiconductor technology, a composite multi-media structure is often used as a passivation protective film.

[0003] However, in the prior art, when the traditional equipment is in use and is subjected to impact force, because there is no buffering mechanism, the impact force will impact the semiconductor, thereby damaging the semiconductor and causing damage to the semiconductor. In addition, after the traditional equipment is plated with a passivation layer, there is no protective mechanism. Therefore, when in use, if it is subjected to external impact, the passivation layer may be damaged, thereby affecting the use efficiency of the passivation layer. Utility Model Content

[0004] In view of the deficiencies of the prior art, the technical solution adopted by the utility model to solve the technical problems is: a power semiconductor surface passivation structure, comprising:

[0005] Passivation layer;

[0006] An anti-impact mechanism, the inner wall of which is slidably connected to the outer wall of the passivation layer, and the anti-impact mechanism is used to alleviate the impact force on the passivation layer;

[0007] A support layer, the top of which is fixedly connected to the bottom of the passivation layer;

[0008] A rubber layer, the top of which is fixedly connected to the bottom of the support layer;

[0009] A fixed layer, the outer wall of which is fixedly connected to the inner wall of the anti-impact mechanism;

[0010] A buffer mechanism, the bottom of which is fixedly connected to the inner wall of the bottom of the fixed layer, and the buffer mechanism is used to alleviate the impact force on the semiconductor;

[0011] The buffer mechanism includes a buffer plate, the bottom of which is fixedly connected to a support block, and the support blocks are arranged in a linear array along the outer wall of the buffer plate, the inner wall of the bottom of the fixed layer is fixedly connected to a buffer pad, and the inner wall of the bottom of the fixed layer is slidably connected to a spring plate.

[0012] Preferably, the bottom of the supporting layer contacts the top of the fixing layer, the outer wall of the rubber layer is slidably connected to the inner wall of the fixing layer, the rubber layer is made of rubber material, and the inner wall of the fixing layer is slidably connected to the outer wall of the buffer pad.

[0013] Preferably, the outer wall of the support block is slidably connected to the inner wall of the spring plate through a mounting groove, and the mounting groove is opened in the wall of the spring plate, the spring plate is linearly arrayed along the outer wall of the buffer pad, and the inner wall of the buffer pad is fixedly connected to the support plate.

[0014] Preferably, the top of the buffer pad is slidably connected to the bottom of the support block, the top of the buffer pad contacts the bottom of the rubber layer, the buffer pad is a soft material, the top of the buffer pad contacts the inner wall of the spring plate, and the top of the spring plate contacts the bottom of the buffer plate.

[0015] Preferably, the anti-impact mechanism comprises a fixed shell, the inner wall of the fixed shell is slidably connected with a connecting block, the top of the connecting block is fixedly connected with an anti-impact plate, the inner wall of the fixed shell is fixedly connected with an airbag, and the fixed shell limits the position of the airbag.

[0016] Preferably, the top of the airbag contacts the bottom of the connecting block, the connecting block limits the sliding direction of the anti-impact plate, the inner wall of the fixed shell is fixedly connected to the outer wall of the fixed layer, the bottom of the anti-impact plate contacts the top of the fixed shell, and the inner wall of the anti-impact plate is slidably connected to the outer wall of the passivation layer.

[0017] The beneficial effects of the utility model are as follows:

[0018] 1. The utility model provides a buffer mechanism, and the support block is pressed against the buffer pad, so as to initially alleviate the impact force. When the impact force is continuously pressed, the buffer plate moves toward the buffer pad and presses on the spring plate, causing the spring plate to deform, thereby further alleviating the impact force, thereby achieving the purpose of alleviating the impact force and reducing damage to the semiconductor, and solving the problem that traditional equipment cannot reduce damage to the semiconductor.

[0019] 2. The utility model sets up an anti-impact mechanism and uses an anti-impact plate to transfer the impact force to the airbag through a connecting block. The airbag is deformed to alleviate the impact force, thereby achieving the purpose of reducing the loss of the passivation layer caused by the impact force, and solving the problem that traditional equipment cannot reduce the damage to the passivation layer caused by the impact force. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is the front view of the utility model;

[0021] Figure 2 It is a cross-sectional view of the utility model;

[0022] Figure 3It is a structural schematic diagram of the buffer mechanism of the utility model;

[0023] Figure 4 It is a structural schematic diagram of the anti-impact mechanism of the utility model.

[0024] In the figure: 1. passivation layer; 2. anti-impact mechanism; 21. anti-impact plate; 22. fixed shell; 23. airbag; 24. connecting block; 3. rubber layer; 4. buffer mechanism; 41. buffer plate; 42. support block; 43. spring plate; 44. mounting groove; 45. buffer pad; 46. support plate; 5. support layer; 6. fixed layer. DETAILED DESCRIPTION

[0025] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The embodiments of the present invention are provided for the purpose of illustration and description, and are not intended to be exhaustive or to limit the present invention to the disclosed forms. Many modifications and variations are obvious to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present invention, and to enable those of ordinary skill in the art to understand the present invention and design various embodiments with various modifications suitable for specific purposes.

[0026] Example:

[0027] See also Figure 1 - Figure 4 The utility model provides a technical solution: a power semiconductor surface passivation structure, comprising:

[0028] Passivation layer 1;

[0029] An anti-impact mechanism 2, the inner wall of the anti-impact mechanism 2 being slidably connected to the outer wall of the passivation layer 1;

[0030] A support layer 5, the top of the support layer 5 is fixedly connected to the bottom of the passivation layer 1;

[0031] A rubber layer 3, the top of the rubber layer 3 is fixedly connected to the bottom of the support layer 5;

[0032] A fixed layer 6, the outer wall of the fixed layer 6 is fixedly connected to the inner wall of the anti-impact mechanism 2;

[0033] A buffer mechanism 4, the bottom of which is fixedly connected to the inner wall of the bottom of the fixed layer 6;

[0034] The buffer mechanism 4 includes a buffer plate 41, a support block 42 is fixedly connected to the bottom of the buffer plate 41, and the support block 42 is linearly arrayed along the outer wall of the buffer plate 41, a buffer pad 45 is fixedly connected to the inner wall of the bottom of the fixed layer 6, the buffer pad 45 is linearly arrayed along the outer wall of the fixed layer 6, a spring plate 43 is slidably connected to the inner wall of the bottom of the fixed layer 6, the bottom of the support layer 5 is in contact with the top of the fixed layer 6, the outer wall of the rubber layer 3 is slidably connected to the inner wall of the fixed layer 6, and the inner wall of the fixed layer 6 is slidably connected to the outer wall of the buffer pad 45.

[0035] The outer wall of the support block 42 is slidably connected to the inner wall of the spring plate 43 through the mounting groove 44, and the mounting groove 44 is opened in the wall of the spring plate 43. The inner wall of the buffer pad 45 is fixedly connected with a support plate 46, and the support plate 46 is used to increase the supporting strength of the buffer pad 45. The top of the buffer pad 45 is slidably connected to the bottom of the support block 42, the top of the buffer pad 45 contacts the bottom of the rubber layer 3, the top of the buffer pad 45 contacts the inner wall of the spring plate 43, and the top of the spring plate 43 contacts the bottom of the buffer plate 41.

[0036] The anti-impact mechanism 2 includes a fixed shell 22, the inner wall of the fixed shell 22 is slidably connected with a connecting block 24, the top of the connecting block 24 is fixedly connected with an anti-impact plate 21, the inner wall of the fixed shell 22 is fixedly connected with an airbag 23, the deformation of the airbag 23 alleviates the impact force transmitted by the connecting block 24, the top of the airbag 23 contacts the bottom of the connecting block 24, the inner wall of the fixed shell 22 is fixedly connected with the outer wall of the fixed layer 6, the bottom of the anti-impact plate 21 contacts the top of the fixed shell 22, and the inner wall of the anti-impact plate 21 is slidably connected with the outer wall of the passivation layer 1.

[0037] Working principle:

[0038] When in use, a multi-layer structure is provided at the bottom of the passivation layer 1, the rubber layer 3 is used to alleviate the impact force on the semiconductor, and the support layer 5 is used to transfer the impact force not absorbed by the rubber layer 3 to the buffer mechanism 4, and then the buffer mechanism 4 absorbs the impact force, thereby protecting the semiconductor. An anti-impact mechanism 2 is provided at the outer circle of the passivation layer 1. When the periphery of the passivation layer 1 is impacted, the anti-impact mechanism 2 of the outer circle is used to absorb the impact force, thereby reducing the problem of external impact on the passivation layer 1 and causing damage to the passivation layer 1.

[0039] When the semiconductor is impacted, the impact force is transmitted to the buffer mechanism 4 through the support layer 5. The impact force first acts on the buffer plate 41, so that the buffer plate 41 drives the support block 42 to move in the direction of the spring plate 43. The support block 42 rests on the buffer pad 45 through the mounting groove 44, and the impact force is relieved by the buffer pad 45. However, when the impact force exceeds the relief force of the buffer pad 45, the buffer plate 41 continues to move in the direction of the spring plate 43, thereby contacting the spring plate 43, forcing the spring plate 43 to deform and slide at the bottom of the fixed layer 6, thereby alleviating the impact force. During the deformation process, the spring plate 43 is released to the buffer pad 45. The inner wall of the support buffer pad 45 is provided with a support plate 46. The support of the support plate 46 increases the support strength of the buffer pad 45.

[0040] After the impact force is relieved, the deformation of the spring plate 43 stops, and then the spring plate 43 is reset under the elastic potential energy of the spring plate 43. During the reset process, the spring plate 43 drives the support block 42 and the buffer plate 41 to reset together, thereby driving the support layer 5 to reset and continue to buffer the impact force.

[0041] When the periphery of the passivation layer 1 is subjected to an impact force, the impact force first contacts the anti-impact plate 21, thereby driving the anti-impact plate 21 and the connecting block 24 to move toward the direction of the airbag 23. With the continuous movement of the connecting block 24, the airbag 23 is deformed by the force. Because the airbag 23 is located in the fixed shell 22, the deformation direction of the airbag 23 is limited under the restriction of the fixed shell 22, thereby alleviating the impact force. After the impact force is relieved, the airbag 23 recovers, thereby driving the anti-impact plate 21 to reset synchronously in preparation for the next anti-impact work.

[0042] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field and related fields without creative work should fall within the scope of protection of the present invention. Structures, devices and operating methods not specifically described and explained in the present invention shall be implemented according to conventional means in the field unless otherwise specified and limited.

Claims

1. A power semiconductor surface passivation structure, characterized in that: include: Passivation layer (1); An impact-resistant structure (2), wherein the inner wall of the impact-resistant structure (2) is slidably connected to the outer wall of the passivation layer (1); A supporting layer (5), the top of the supporting layer (5) being fixedly connected to the bottom of the passivation layer (1); A rubber layer (3), the top of the rubber layer (3) being fixedly connected to the bottom of the support layer (5); A fixed layer (6), the outer wall of the fixed layer (6) being fixedly connected to the inner wall of the anti-impact mechanism (2); A buffer mechanism (4), the bottom of the buffer mechanism (4) being fixedly connected to the inner wall of the bottom of the fixed layer (6); The buffer mechanism (4) comprises a buffer plate (41), the bottom of the buffer plate (41) is fixedly connected to a support block (42), and the support blocks (42) are arranged in a linear array along the outer wall of the buffer plate (41), the inner wall of the bottom of the fixed layer (6) is fixedly connected to a buffer pad (45), and the inner wall of the bottom of the fixed layer (6) is slidably connected to a spring plate (43).

2. A power semiconductor surface passivation structure according to claim 1, characterized in that: The bottom of the support layer (5) contacts the top of the fixing layer (6), the outer wall of the rubber layer (3) is slidably connected to the inner wall of the fixing layer (6), and the inner wall of the fixing layer (6) is slidably connected to the outer wall of the buffer pad (45).

3. A power semiconductor surface passivation structure according to claim 1, characterized in that: The outer wall of the support block (42) is slidably connected to the inner wall of the spring plate (43) via a mounting groove (44), and the mounting groove (44) is provided in the wall of the spring plate (43). The inner wall of the buffer pad (45) is fixedly connected to a support plate (46).

4. A power semiconductor surface passivation structure according to claim 1, characterized in that: The top of the buffer pad (45) is slidably connected to the bottom of the support block (42), the top of the buffer pad (45) is in contact with the bottom of the rubber layer (3), the top of the buffer pad (45) is in contact with the inner wall of the spring plate (43), and the top of the spring plate (43) is in contact with the bottom of the buffer plate (41).

5. The power semiconductor surface passivation structure according to claim 1, characterized in that: The anti-impact mechanism (2) comprises a fixed shell (22), the inner wall of the fixed shell (22) is slidably connected to a connecting block (24), the top of the connecting block (24) is fixedly connected to an anti-impact plate (21), and the inner wall of the fixed shell (22) is fixedly connected to an air bag (23).

6. A power semiconductor surface passivation structure according to claim 5, characterized in that: The top of the airbag (23) is in contact with the bottom of the connecting block (24), the inner wall of the fixed shell (22) is fixedly connected to the outer wall of the fixed layer (6), the bottom of the anti-impact plate (21) is in contact with the top of the fixed shell (22), and the inner wall of the anti-impact plate (21) is slidably connected to the outer wall of the passivation layer (1).

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