Spectral chip and electronic equipment

Abstract

The utility model provides a spectrum chip and electronic equipment. The spectrum chip comprises a photosensitive layer, a light filtering layer, a glass layer and a filling layer, the photosensitive layer comprises a plurality of photosensitive units, the light filtering layer is arranged on one side of the photosensitive layer, the light filtering layer comprises a plurality of light filtering units, the light filtering units and the photosensitive units are arranged in a one-to-one correspondence mode, and the light filtering units are located on photosensitive paths of the photosensitive units; the glass layer is arranged on the side, away from the photosensitive layer, of the filter layer, and the filling layer is arranged between the photosensitive layer and the filter layer and connects the photosensitive layer and the filter layer. According to the spectrum chip, the distance between the filter layer and the photosensitive layer is shortened, the propagation distance of light is shortened, and the quality of the spectrum chip is improved.

Description

Technical Field

[0001] The present application relates to the technical field of optical filtering structures, and in particular to spectral chips and electronic devices. Background Art

[0002] Spectral chips have the advantages of small size, light weight, low power consumption and fast analysis, so they are widely used in the field of spectral analysis. They can be used in spectral imaging, spectral sensing, chemical analysis, biomedical testing and other fields, providing a new solution for real-time monitoring and rapid analysis.

[0003] In the spectral chip manufactured by the spectral chip preparation method in the related art, the light needs to pass through thicker glass after filtering to reach the photosensitive unit, resulting in unstable optical performance of the spectral chip. Utility Model Content

[0004] The embodiments of the present application provide a spectral chip and an electronic device, which can improve the spectral chip. After being filtered, light needs to pass through thicker glass to reach the photosensitive unit, which leads to the technical problem that the optical performance of the spectral chip is unstable.

[0005] In a first aspect, an embodiment of the present application provides a spectral chip, comprising:

[0006] A photosensitive layer, comprising a plurality of photosensitive units;

[0007] A filter layer is arranged on one side of the photosensitive layer, the filter layer comprises a plurality of filter units, the plurality of filter units are arranged opposite to the plurality of photosensitive units one by one, and the filter units are located on the photosensitive path of the photosensitive units;

[0008] A glass layer, arranged on a side of the filter layer away from the photosensitive layer;

[0009] The filling layer is arranged between the photosensitive layer and the filter layer, and connects the photosensitive layer and the filter layer.

[0010] In one embodiment, the filling layer includes a first filling layer and a second filling layer, the first filling layer is arranged on the side of the filter layer away from the glass layer, the second filling layer is arranged on the side of the photosensitive layer facing the filter layer, and the first filling layer and the second filling layer are connected.

[0011] In one embodiment, the first filling layer covers the filter layer, and the second filling layer covers the photosensitive layer.

[0012] In one embodiment, the first filling layer and the second filling layer are connected by bonding.

[0013] In one embodiment, the glass layer has a thickness of 100 nm-200 nm.

[0014] In one embodiment, a plurality of light-gathering units are disposed on a side of the glass layer facing away from the light-filtering unit, and the plurality of light-gathering units are arranged opposite to the plurality of light-filtering units one by one.

[0015] In one embodiment, the photosensitive unit is formed with a photosensitive area, the photosensitive area is arranged opposite to the filter unit, and the photosensitive area is located within the orthographic projection of the filter unit on the photosensitive unit.

[0016] In one embodiment, the photosensitive area is located within the orthographic projection of the photosensitive unit by the light focusing unit.

[0017] In one embodiment, the orthographic projection of the light focusing unit on the glass layer is within the orthographic projection of the light filtering unit on the glass layer.

[0018] In a second aspect, an embodiment of the present application provides an electronic device, comprising the above-mentioned spectral chip.

[0019] Beneficial effects of the embodiments of the present application:

[0020] In an embodiment of the present application, the photosensitive layer and the filter layer are connected by a filling layer, and the glass layer is located on the side of the filter layer away from the photosensitive layer, so that the glass layer will not affect the light transmission between the filter layer and the photosensitive layer, that is, the light passing through the filter layer can reach the photosensitive layer without passing through the glass layer, thereby shortening the distance between the filter layer and the photosensitive layer, shortening the propagation distance of light, and being beneficial to improving the quality of the spectral chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 is a flow chart of a method for preparing a spectral chip provided in an embodiment of the present application;

[0023] Figure 2 is a schematic diagram of the structure of a spectral chip provided in an embodiment of the present application;

[0024] Figure 3 is a schematic structural diagram of a photosensitive layer provided with a second filling layer provided in an embodiment of the present application;

[0025] Figure 4It is a partial structural schematic diagram of a spectral chip provided in an embodiment of the present application, wherein a first filling layer is provided on the filter layer;

[0026] Figure 5 It is a schematic diagram of the structure of a spectral chip provided with a focusing unit provided in an embodiment of the present application. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the directional words such as "upper" and "lower" used generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inside" and "outside" refer to the outline of the device.

[0028] Combine the following Figures 1 to 5 The present invention describes a method for preparing a spectral chip, a spectral chip and an electronic device, wherein: Figure 2 and Figure 4 The glass layer 3 in the glass has not been thinned yet. Figure 5 The glass layer in the glass is thinned.

[0029] According to the embodiment of the first aspect of the present application, Figure 1 , the preparation method of the spectral chip comprises:

[0030] Step 101, constructing a plurality of filter units 21 on the surface of the glass layer 3;

[0031] It is understandable that the glass layer 3 can also be understood as a silicon dioxide layer.

[0032] Step 102: Cover the filter unit 21 with a first filler to form a first planarization layer;

[0033] It can be understood that the first filler is covered on the filter unit 21, the entire filter unit 21 is covered by the first filler, and the side of the first filler facing away from the glass layer 3 is flattened to form a first flattening layer, so as to facilitate the subsequent construction of a new structure on the first flattening layer.

[0034] It can be understood that the present embodiment does not limit the first filler, and the first filler may be a filler commonly used in the chip manufacturing process.

[0035] Step 103, obtaining a substrate having a plurality of photosensitive units 11 on the substrate, and covering the photosensitive units 11 with a second filler to form a second planarization layer on the photosensitive units 11;

[0036] It is understandable that the second filler is covered on the photosensitive unit 11 of the substrate, all the photosensitive units 11 are covered by the second filler, and the side of the second filler facing away from the substrate is flattened to form a second flattening layer, so as to facilitate the construction of other structures on the second flattening layer.

[0037] Step 104 : Bonding the first planarization layer to the second planarization layer, so that the plurality of filter units 21 and the plurality of photosensitive units 11 are arranged opposite to each other.

[0038] It can be understood that the first planarization layer and the second planarization layer are docked together, the position of the first planarization layer and / or the second planarization layer is adjusted so that multiple filter units 21 and multiple photosensitive units 11 are arranged relative to each other, and then the first planarization layer and the second planarization layer are bonded together.

[0039] It can be understood that when the first planarization layer and the second planarization layer are bonded, if the second planarization layer is stationary, the glass layer 3 is rotated so that the first planarization layer faces the second planarization layer and the glass layer 3 faces away from the second planarization layer, so that there is no obstruction of the glass layer 3 between the filter unit 21 and the photosensitive unit 11, and the light can reach the photosensitive unit 11 after passing through the filter unit 21 without passing through the glass layer 3.

[0040] According to the preparation method of the spectrum chip of the present application, the filter unit 21 is constructed on the surface of the glass layer 3, the photosensitive unit 11 is on the substrate, the filter unit 21 is covered with the first filling layer 41 to form a first planarization layer, and the photosensitive unit 11 is covered with the second filling material to form a second planarization layer, at which time the first planarization layer is on the side of the filter unit 21 away from the glass layer 3. Then the first planarization layer and the second planarization layer are bonded together, so that a plurality of filter units 21 and a plurality of photosensitive units 11 are arranged one by one, at which time there are only the first planarization layer and the second planarization layer between the filter unit 21 and the photosensitive unit 11, that is, at this time the filter unit 21 is between the glass layer 3 and the photosensitive unit 11. That is, the present application improves the preparation method and forms the glass layer 3 on the side of the filter unit 21 away from the photosensitive unit 11. The glass layer 3 does not increase the distance between the filter unit 21 and the photosensitive unit 11, and can effectively reduce the distance between the filter unit 21 and the photosensitive unit 11, thereby shortening the propagation distance of light, which is beneficial to improving the imaging quality. In addition, the light does not need to pass through the glass after passing through the filter unit 21, which can effectively reduce light crosstalk and improve the optical performance of the spectral chip.

[0041] It is understandable that in the related art, the filter layer 2 is generally constructed on the glass layer 3 first, a micro lens is arranged on the filter layer 2, and then the glass with the filter layer 2 and the micro lens is covered on the photosensitive layer 1 to form a spectrum chip. This results in the glass layer 3 being between the filter layer 2 and the photosensitive layer 1, and the thickness of the glass layer 3 is relatively large, generally several hundred microns, which is several hundred times the thickness of the filter unit 21, and thus the light needs to pass through the glass layer 3 after being filtered by the filter unit 21 to reach the photosensitive unit 11, which easily leads to the instability of the optical performance of the spectrum chip, and the light is also likely to cause optical crosstalk in the spectrum chip when passing through the glass layer 3. The present application forms a first planarization layer using a filler on the filter unit 21, forms a second planarization layer using a filler on the photosensitive unit 11, and then directly bonds the first planarization layer and the second planarization layer together, thereby avoiding the glass layer 3 from affecting the light transmission between the filter unit 21 and the photosensitive unit 11, and can effectively improve the optical performance stability of the spectral chip and effectively prevent the spectral chip from experiencing optical crosstalk.

[0042] In one embodiment of the present application, after bonding the first planarization layer and the second planarization layer, the method further includes:

[0043] Thinning the glass layer 3;

[0044] A plurality of light focusing units 5 are constructed on the thinned glass layer 3 .

[0045] It can be understood that after the first planarization layer and the second planarization layer are bonded together, the side of the glass layer 3 facing away from the filter unit 21 is thinned to reduce the thickness of the glass layer 3, and then a plurality of focusing units 5 are constructed on the thinned glass layer 3. The focusing units 5 can increase the light flux entering the filter unit 21 and the photosensitive unit 11.

[0046] It can be understood that after the glass layer 3 is thinned, the filter unit 21 is constructed on the glass layer 3, so that the distance between the focusing unit 5 and the filter unit 21 is also shortened, thereby reducing the influence of the glass layer 3 on the light transmission between the focusing unit 5 and the filter unit 21, shortening the light propagation distance, and being beneficial to improving the imaging quality.

[0047] In one embodiment of the present application, thinning the glass layer 3 includes: thinning the glass layer 3 to 100 nm-200 nm.

[0048] It can be understood that thinning the glass layer 3 to 100nm-200nm, while ensuring the structural stability of the glass layer 3 and the supporting function for the focusing unit 5, effectively shortens the distance between the focusing unit 5 and the filtering unit 21, shortens the light transmission distance of the spectral chip, and is beneficial to improving the imaging quality.

[0049] In one embodiment of the present application, thinning the glass layer 3 includes: thinning the glass layer 3 to 0.01%-0.03% of the original thickness.

[0050] It can be understood that thinning the glass layer 3 to 0.01%-0.03% of the original thickness, while ensuring the structural stability of the glass layer 3 and the supporting function for the focusing unit 5, effectively shortens the distance between the focusing unit 5 and the filtering unit 21, shortens the light transmission distance of the spectral chip, and is beneficial to improving the imaging quality.

[0051] In one embodiment of the present application, bonding the first planarization layer to the second planarization layer includes:

[0052] Rotate the glass layer 3 so that the first planarization layer faces the second planarization layer;

[0053] Aligning the first planarization layer and the second planarization layer so that the photosensitive unit 11 and the filter unit 21 are aligned;

[0054] The first planarization layer and the second planarization layer are bonded.

[0055] It can be understood that when bonding the first planarization layer and the second planarization layer, the glass layer 3 is first rotated so that the first planarization layer is opposite to the second planarization layer, and then the first planarization layer and the second planarization layer are aligned so that the multiple photosensitive units 11 and the multiple filter units 21 are relatively aligned one by one, and then the first planarization layer and the second planarization layer are bonded, so that the glass layer 3 of the prepared spectral chip is on the side of the filter unit 21 away from the light sensitive side, which can effectively prevent the glass layer 3 from affecting the light transmission between the filter unit 21 and the photosensitive unit 11.

[0056] In one embodiment of the present application, after covering the filter unit 21 with a first filler to form a first planarization layer, the method further includes:

[0057] The first planarization layer is polished.

[0058] It is understandable that after the first planarization layer is formed, the first planarization layer is polished to ensure the flatness of the first planarization layer and the quality of the spectral chip.

[0059] It can be understood that grinding the first planarization layer mainly refers to grinding the side of the first planarization layer away from the filter unit 21 .

[0060] In one embodiment of the present application, after the photosensitive unit 11 is covered with a second filler to form a second planarization layer on the photosensitive unit 11, the method further includes:

[0061] The second planarization layer is polished.

[0062] It is understandable that after the second planarization layer is formed, the second planarization layer is polished to ensure the flatness of the second planarization layer and the quality of the spectral chip.

[0063] It can be understood that grinding the second planarization layer mainly refers to grinding the side of the second planarization layer away from the photosensitive unit 11.

[0064] In the embodiment of the present application, after forming the first planarization layer and the second planarization layer, the first planarization layer and the second planarization layer may be polished at the same time.

[0065] In one embodiment of the present application, constructing the filter unit 21 on the surface of the glass layer 3 includes:

[0066] A plurality of filter units 21 are constructed on the surface of the glass layer 3 , and at least two filter units 21 have different thicknesses.

[0067] It is understandable that by setting the thickness of at least two filter units 21 to be different, the central wavelengths of the optical channels of the filter units 21 with different thicknesses will also be different, thereby ensuring that multiple optical channels can be constructed on the glass layer 3, making the spectral chip a multi-channel chip.

[0068] In one embodiment of the present application, a plurality of filter units on the surface of the glass layer 3 constitute a filter structure. A plurality of filter units 21 are constructed on the surface of the glass layer 3, including:

[0069] Obtaining a substrate, wherein a plurality of optical channel regions are provided on the surface of the substrate, and the plurality of optical channel regions correspond one to one to the plurality of optical channels of the filter structure;

[0070] It can be understood that the surface of the substrate is provided with a plurality of optical channel regions, each of which corresponds to an optical channel of a filter structure. Dividing the surface of the substrate into a plurality of optical channel regions facilitates the subsequent formation of corresponding filter units in different optical channel regions, thereby forming a filter structure having a plurality of optical channels on the surface of the substrate.

[0071] It can be understood that the surface of the substrate is provided with multiple optical channel areas, which can be formed by providing corresponding dividing lines on the surface of the substrate, or the surface of the substrate can be divided into multiple areas at the operating end without directly providing dividing lines on the surface of the substrate.

[0072] A single element or a single element compound is deposited on the surface of the substrate, and the deposition times in different optical channel regions are different, so as to form single element or single element compound with different thicknesses in multiple optical channel regions.

[0073] It is understandable that after obtaining a substrate with multiple optical channel areas, different times of elemental simple substances or elemental compounds are deposited at different optical channel areas, thereby forming elemental simple substances or elemental compounds of different thicknesses at multiple optical channel areas. The elemental simple substances or elemental compounds at each optical channel area can play a filtering role, and elemental simple substances or elemental compounds with different thicknesses allow different light to pass through, that is, elemental simple substances or elemental compounds with different thicknesses correspond to different central wavelengths of optical channels. In other words, by depositing elemental simple substances or elemental compounds at the optical channel area, a filtering structure can be formed at the optical channel area, that is, a filtering structure can be constructed on the surface of the substrate.

[0074] It can be understood that since the thickness of a single layer of elemental substance or elemental compound is at the nanometer level, the present application can adjust the thickness of the filter structure composed of elemental substance or elemental compound at the nanometer level, thereby reducing the thickness of the filter structure while ensuring that the thickness of the elemental substance or elemental compound in multiple optical channel areas is different.

[0075] It can be understood that the thickness of the element single substance or element compound in the same optical channel region is the same, which ensures the filtering performance of the element single substance or element compound formed in the optical channel region.

[0076] By depositing elemental simple substances or elemental compounds in the optical channel region of the substrate, the elemental simple substances or elemental compounds in each optical channel region constitute a filter unit, and the filter units formed in all optical channel regions together constitute a filter structure. By controlling the number of depositions in different optical channel regions, while all optical channel regions of the substrate are deposited with elemental simple substances or elemental compounds, the thickness of the elemental simple substances or elemental compounds in multiple optical channel regions is different, and thus filter units with different central wavelengths of optical channels can be formed in multiple optical channel regions. The present application forms a filter structure by depositing elemental simple substances or elemental compounds to replace the use of stacked dielectric films to form filter units in related technologies. Since the single-layer thickness of the elemental simple substances or elemental compounds is smaller than that of the dielectric film, the thickness of the elemental simple substances or elemental compounds corresponding to different filter units can be adjusted on a smaller scale, thereby reducing the overall thickness of the filter structure while ensuring that the thicknesses of the elemental simple substances or elemental compounds of multiple filter units are different, which can effectively reduce the thickness of the filter structure. The filter structure can be formed by arranging the elemental simple substances or elemental compounds in the optical channel area by deposition or plating, thereby simplifying the processing process of the filter structure and improving production efficiency.

[0077] It can be understood that since the present application forms the filter structure by depositing single elements or element compounds, the thickness of the obtained filter structure is nanometer-level. Compared with the dielectric film filter structure in the related art, the thickness of the filter structure of the present application is smaller.

[0078] In one embodiment of the present application, depositing a single element or an element compound on the surface of a substrate includes:

[0079] Get the center wavelength of each optical channel;

[0080] Determining a target thickness of a single element or a compound of elements at a region of each optical channel based on a central wavelength of each optical channel;

[0081] Based on the target thickness of the elemental substance or the elemental compound at each optical channel region, the elemental substance or the elemental compound is deposited on the surface of the substrate.

[0082] It is understandable that when depositing elemental substances or elemental compounds on the surface of the substrate, the central wavelength of each optical channel is first obtained, and the target thickness of the elemental substances or elemental compounds at the optical channel area corresponding to the optical channel can be determined based on the central wavelength of the optical access, and then the elemental substances or elemental compounds are deposited on the surface of the substrate according to the target thickness of the elemental substances or elemental compounds corresponding to the optical channel area, so as to form elemental substances or elemental compounds with target thickness in the optical channel area. This embodiment can accurately form elemental substances or elemental compounds with different thicknesses in different optical channel areas by depositing elemental substances or elemental compounds on the surface of the substrate according to the target thickness of the elemental substances or elemental compounds corresponding to each optical channel area.

[0083] It can be understood that based on the target thickness of the elemental substance or elemental compound in each optical channel area, the number of depositions corresponding to each optical channel area can be determined. By controlling the deposition of the elemental substance or elemental compound according to the number of depositions, the elemental substance or elemental compound of the corresponding target thickness can be accurately formed in each optical channel area.

[0084] It is understandable that different thicknesses of single element substances or element compounds correspond to different central wavelengths of optical channels, and thus the thickness of the single element substance or element compound can be determined according to the required central wavelength of the optical channel.

[0085] In one embodiment of the present application, the target thickness of the element single substance or element compound at each optical channel region is arranged in order from small to large as T1, T2, T3, ..., T n , depositing elemental elements or elemental compounds on the surface of the substrate, including:

[0086] Depositing a single element or an element compound with a thickness of T1 on the surface of the substrate;

[0087] Mask the optical channel area corresponding to T1 thickness;

[0088] T is deposited on the surface of the substrate i -T i-1 Thickness of an element or element compound, where 2≤i≤n;

[0089] To T i Optical channel area mask corresponding to thickness, where i≤n-1;

[0090] Repeatedly deposit T on the surface of the substrate i -T i-1 Thickness of elemental substance or elemental compound steps and T i The thickness of the optical channel area corresponds to the mask step until T n The optical channel area corresponding to the thickness is deposited with T n Thickness of a single element or element compound.

[0091] It can be understood that the target thickness of the element single substance or element compound to be deposited in each optical channel area can be determined according to the central wavelength of the optical channel corresponding to each optical channel area, and the target thickness of the element single substance or element compound to be deposited in each optical channel area is arranged in order from large to small T1, T2, T3...T n .

[0092] When depositing a single element or a compound on the surface of the substrate, first deposit a layer of single element or compound with a thickness of T1 on the surface of the entire substrate. At this time, the optical channel area with a target thickness of T1 has been deposited with single element or compound with a thickness of T1, that is, the deposition of single element or compound has been completed in the optical channel area with a target thickness of T1. Then, mask the optical channel area corresponding to the thickness of T1 to avoid affecting the optical channel area corresponding to the thickness of T1 when subsequently depositing single element or compound. Then, T1 is deposited on the surface of the substrate. i -T i-1The thickness of the element or element compound, i increases from 2 to n, that is, the element or element compound of T2-T1 thickness is first deposited on the surface of the substrate. Since the surface of the substrate has been deposited with the element or element compound of T1 thickness, then the surface of the substrate is deposited with T2-T1+T1, that is, the element or element compound of T2 thickness, which means that the optical channel area with the target thickness of T2 has been deposited with the element or element compound of T2 thickness, and the deposition work in the optical channel area corresponding to the thickness of T2 has been completed. Then, the optical channel area corresponding to the thickness of T2 is masked to avoid the influence of the thickness deposition of the element or element compound on the optical channel area corresponding to the thickness of T2. And so on, until the target thickness is T n The optical channel area is deposited with T n Thickness of a single element or element compound.

[0093] It can be understood that when the target thickness T n The optical channel area is deposited with T n When the thickness of the element or element compound is greater than 100%, it means that the filter structure has been completed and no further deposition of the element or element compound will be performed. n The optical channel area corresponding to the thickness is masked.

[0094] In one embodiment of the present application, a plurality of filter units on the surface of the glass layer 3 constitute a filter structure. A plurality of filter units 21 are constructed on the surface of the glass layer 3, including:

[0095] Obtaining a substrate, wherein a plurality of optical channel regions are provided on the surface of the substrate, and the plurality of optical channel regions correspond one to one to the plurality of optical channels of the filter structure;

[0096] It can be understood that the surface of the substrate is provided with a plurality of optical channel regions, each of which corresponds to an optical channel of a filter structure. Dividing the surface of the substrate into a plurality of optical channel regions facilitates the subsequent formation of corresponding filter units in different optical channel regions, thereby forming a filter structure having a plurality of optical channels on the surface of the substrate.

[0097] It can be understood that the surface of the substrate is provided with multiple optical channel areas, which can be formed by providing corresponding dividing lines on the surface of the substrate, or the surface of the substrate can be divided into multiple areas at the operating end without directly providing dividing lines on the surface of the substrate.

[0098] Coating a layer of element single substance film or element compound film on the surface of the substrate;

[0099] It can be understood that in order to make multiple optical channel areas correspond to multiple optical channels one by one, the thickness of the element single film or element compound film to be plated at the multiple optical channel areas is different. Since the thickness of the element single film or element compound film corresponding to different optical channels is different, the thickness of the element single film or element compound film plated on the surface of the substrate must be greater than or equal to the maximum thickness of the element single film or element compound film to be plated at the multiple optical channel areas, so as to facilitate the subsequent etching of multiple different thickness areas on the element single film or element compound film.

[0100] The element single substance film or the element compound film is etched so that the thickness of the element single substance or the element compound at different optical channel regions is different.

[0101] It can be understood that the element single substance film or element compound film on the surface of the substrate is etched to reduce the thickness of the element single substance film or element compound film in multiple optical channel areas, so that the thickness of the element single substance film or element compound film in each optical channel area is at the required target thickness, so that a filter unit can be formed in each optical channel area. Since the thickness of the element single substance or element compound in different optical channel areas is different, the optical channels corresponding to different optical channel areas are also different, thereby forming a multi-channel filter structure on the surface of the substrate.

[0102] It is understandable that the single element film or the compound element film corresponding to multiple or all optical channel regions may be etched simultaneously, or the single element film or the compound element film corresponding to one of the optical channel regions may be etched separately.

[0103] By coating a layer of element single substance film or element compound film on the surface of a substrate, and then etching the element single substance film or element compound film, element single substances or element compounds with different thicknesses can be obtained in different optical channel regions. When etching the element single substance film or element compound film, only a layer of element single substance or element compound on the surface of the element single substance film or element compound film can be etched, that is, compared with the dielectric film in the related art, the present application can adjust the thickness of the element single substance film or element compound film on a smaller scale, thereby ensuring that the thickness of the element single substance film or element compound film in multiple optical channel regions is different while reducing the overall thickness of the filter structure, which can effectively reduce the thickness of the filter structure, and the filter structure can be formed by arranging the element single substance or element compound in the optical channel region by deposition or plating, thereby simplifying the processing process of the filter structure and improving production efficiency.

[0104] In one embodiment of the present application, etching an element single substance film or an element compound film includes:

[0105] Get the center wavelength of each optical channel;

[0106] Determining a target thickness of a single element or a compound of elements at a region of each optical channel based on a central wavelength of each optical channel;

[0107] The element single substance film or the element compound film is etched based on the target thickness of the element single substance or the element compound at each optical channel region.

[0108] It is understandable that when etching an elemental single substance film or an elemental compound film, the central wavelength of each optical channel is first obtained, and the target thickness of the elemental single substance or elemental compound at the optical channel region corresponding to the optical channel can be determined based on the central wavelength of the optical access, and then the elemental single substance film or elemental compound film is etched based on the target thickness of the elemental single substance or elemental compound corresponding to the optical channel region to form elemental single substances or elemental compounds with corresponding target thicknesses in different optical channel regions. This embodiment etches the elemental single substance film or elemental compound film based on the target thickness of the elemental single substance or elemental compound corresponding to each optical channel region, so that elemental single substances or elemental compounds with different thicknesses can be accurately formed in different optical channel regions.

[0109] It can be understood that based on the target thickness of the element single substance or element compound in each optical channel area, the number of etchings and / or etching depth corresponding to each optical channel area can be determined, and the etching of the element single substance film or element compound film can be controlled according to the etching number and / or etching depth, so that the element single substance or element compound of the corresponding target thickness can be accurately formed in each optical channel area.

[0110] It is understandable that different thicknesses of single element substances or element compounds correspond to different central wavelengths of optical channels, and thus the thickness of the single element substance or element compound can be determined according to the required central wavelength of the optical channel.

[0111] In one embodiment of the present application, etching an element single substance film or an element compound film includes:

[0112] Based on the target thickness of the element single substance or the element compound at each optical channel region, the element single substance film or the element compound film at each optical channel region is sequentially etched.

[0113] It can be understood that when etching the element single substance film or element compound film, according to the target thickness of the element single substance or element compound corresponding to one of the optical channel regions, the element single substance film or element compound film at the optical channel region is etched, and the element single substance film or element compound film at the optical channel region is etched to the target thickness, thereby completing the processing of the optical channel region, and a corresponding filter unit can be obtained at the optical channel region, and the filter unit is formed with an optical channel corresponding to the optical channel region. Similarly, according to the target thickness of the element single substance or element compound corresponding to other optical channel regions, the element single substance film or element compound film at other optical channel regions is etched in turn to obtain element single substances or element compounds of corresponding target thicknesses at other optical channel regions.

[0114] In one embodiment of the present application, the target thickness of the element single substance or element compound at each optical channel region is arranged in descending order as A1, A2, A3, ..., A n , etching element single substance film or element compound film, including:

[0115] Mask the optical channel area corresponding to the thickness of A1;

[0116] Etch the element single substance film or element compound film to A m Thickness, where 2≤m≤n

[0117] A m The optical channel area mask corresponding to the thickness, where m≤n-1;

[0118] Repeatedly etch the element single substance film or element compound film to A m Thickness step and pair A m The optical channel area mask step corresponding to the thickness is performed until A n The element single substance film or element compound film at the optical channel area corresponding to the thickness is etched to A n thickness.

[0119] It can be understood that the target thickness of the element single substance or element compound to be deposited in each optical channel area can be determined according to the central wavelength of the optical channel corresponding to each optical channel area, and the target thickness of the element single substance or element compound to be deposited in each optical channel area is arranged in order from large to small A1, A2, A3...A n .

[0120] When etching the element single substance film or element compound film, mask the optical channel area corresponding to the A1 thickness, that is, the maximum thickness, and then etch the element single substance film or element compound film to A2 thickness. At this time, the etching of the element single substance film or element compound film at the optical channel area with the target thickness of A2 has been completed, that is, the construction of the filter unit at the optical channel area with the target thickness of A2 has been completed, and the optical channel area corresponding to the A2 thickness is masked to prevent subsequent etching from affecting the optical channel area corresponding to the A2 thickness. And so on, complete A2 to A m Construction of the filter unit at the optical channel area of ​​thickness.

[0121] It is understandable that after completing A m After etching the element single substance film or element compound film at the optical channel area corresponding to the thickness, there is no need to m The optical channel area corresponding to the thickness is masked.

[0122] It can be understood that before masking the optical channel area corresponding to the thickness of A1, it is determined whether the thickness of the element single film or element compound film at the optical channel area corresponding to the thickness of A1 is equal to A1. If the thickness of the element single film or element compound film at the optical channel area corresponding to the thickness of A1 is greater than A1, the element single film or element compound film is first etched to the thickness of A1. If the thickness of the element single film or element compound film at the optical channel area corresponding to the thickness of A1 is equal to A1, the optical channel area corresponding to the thickness of A1 is directly masked.

[0123] According to an embodiment of the second aspect, Figure 2 A spectral chip includes a photosensitive layer 1, a filter layer 2, a glass layer 3 and a filling layer 4, wherein the photosensitive layer 1 includes a plurality of photosensitive units 11, the filter layer 2 is arranged on one side of the photosensitive layer 1, the filter layer 2 includes a plurality of filter units 21, the plurality of filter units 21 are arranged one by one opposite to the plurality of photosensitive units 11, the filter units 21 are located on the photosensitive path of the photosensitive units 11, the glass layer 3 is arranged on the side of the filter layer 2 away from the photosensitive layer 1, the filling layer 4 is arranged between the photosensitive layer 1 and the filter layer 2, and connects the photosensitive layer 1 and the filter layer 2.

[0124] According to the spectral chip of the present application, the photosensitive layer 1 and the filter layer 2 are connected by the filling layer 4, and the glass layer 3 is located on the side of the filter layer 2 away from the photosensitive layer 1, so that the glass layer 3 will not affect the light transmission between the filter layer 2 and the photosensitive layer 1, that is, the light passing through the filter layer 2 can reach the photosensitive layer 1 without passing through the glass layer 3, which shortens the distance between the filter layer 2 and the photosensitive layer 1, shortens the propagation distance of the light, and is beneficial to improving the quality of the spectral chip.

[0125] In one embodiment of the present application, Figure 3 and Figure 4 The filling layer 4 includes a first filling layer 41 and a second filling layer 42. The first filling layer 41 is arranged on the side of the filter layer 2 away from the glass layer 3, and the second filling layer 42 is arranged on the side of the photosensitive layer 1 facing the filter layer 2. The first filling layer 41 and the second filling layer 42 are connected.

[0126] It can be understood that by connecting the first filling layer 41 to the side of the filter layer 2 facing away from the glass layer 3 and connecting the second filling layer 42 to the side of the photosensitive layer 1 facing the filter layer 2, the first filling layer 41 and the second filling layer 42 are connected to connect the photosensitive layer 1 and the filter layer 2 together, thereby achieving the direct connection of the photosensitive layer 1 and the filter layer 2 together by using the filling layer 4, so that there is no glass layer 3 between the photosensitive layer 1 and the filter layer 2, thereby shortening the distance between the photosensitive layer 1 and the filter layer 2.

[0127] In the embodiments of the present application, Figure 3 and Figure 4 The first filling layer 41 covers the filter layer 2 , and the second filling layer 42 covers the photosensitive layer 1 .

[0128] It is understandable that by covering the filter layer 2 with the first filling layer 41, the filter unit 21 can be prevented from being directly exposed, thereby ensuring the structural stability of the filter unit 21 of the filter layer 2. By covering the photosensitive layer 1 with the second filling layer 42, the photosensitive unit 11 can be prevented from being directly exposed, thereby ensuring the structural stability of the photosensitive unit 11 of the photosensitive layer 1. By covering the filter unit 21 and the photosensitive unit 11 with the first filling layer 41 and the second filling layer 42, respectively, the photosensitive unit 11 can be prevented from directly contacting the filter unit 21, thereby preventing the photosensitive unit 11 from affecting the filtering performance of the filter unit 21.

[0129] In the embodiment of the present application, the first filling layer 41 and the second filling layer 42 are connected by bonding.

[0130] It can be understood that the first filling layer 41 and the second filling layer 42 can also be connected together in any other suitable manner.

[0131] In one embodiment of the present application, the thickness of the glass layer 3 is 100 nm-200 nm.

[0132] It is understandable that setting the thickness of the glass layer 3 to 100nm-200nm effectively shortens the distance between the focusing unit 5 and the filtering unit 21 while ensuring the structural stability of the glass layer 3, shortens the light transmission distance of the spectral chip, and is beneficial to improving the imaging quality.

[0133] In one embodiment of the present application, Figure 5A plurality of light focusing units 5 are disposed on a side of the glass layer 3 facing away from the light filtering unit 21 , and the plurality of light focusing units 5 are disposed opposite to the plurality of light filtering units 21 one by one.

[0134] It can be understood that by arranging a plurality of focusing units 5 on the side of the glass layer 3 away from the filter unit 21 , the focusing units 5 can increase the light flux entering the filter unit 21 and the photosensitive unit 11 , thereby improving the performance of the spectral chip.

[0135] It can be understood that the multiple focusing units 5 and the multiple filtering units 21 are arranged one by one, and each filtering unit 21 corresponds to a single focusing unit 5, that is, the focusing unit 5 will focus the light to the corresponding filtering unit 21, thereby ensuring the light flux entering each filtering unit 21.

[0136] In one embodiment of the present application, the photosensitive unit 11 is formed with a photosensitive area, which is arranged opposite to the filter unit 21 , and the photosensitive area is located within the orthographic projection of the filter unit 21 on the photosensitive unit 11 .

[0137] It can be understood that the photosensitive area of ​​the photosensitive unit 11 is set within the positive projection of the filter unit 21 on the photosensitive unit 11, so that the light entering the photosensitive area of ​​the photosensitive unit 11 is filtered by the filter unit 21, ensuring the performance of the spectral chip.

[0138] In one embodiment of the present application, the photosensitive area is located within the orthographic projection of the light focusing unit 5 on the photosensitive unit 11 .

[0139] It can be understood that the photosensitive area is set within the positive projection of the focusing unit 5 on the photosensitive unit 11, so that the photosensitive area is on the transmission path between the focusing unit 5 and the photosensitive unit 11, so that the light can accurately enter the photosensitive unit 11 after passing through the focusing unit 5, thereby ensuring the light flux entering the photosensitive unit 11.

[0140] In one embodiment of the present application, the orthographic projection of the focusing unit 5 on the glass layer 3 is within the orthographic projection of the filtering unit 21 on the glass layer 3 .

[0141] It can be understood that this embodiment ensures that light will pass through the filtering unit 21 after passing through the focusing unit 5, so that the light entering the photosensitive unit 11 is filtered by the filtering unit 21, which can prevent the light passing through the focusing unit 5 from entering the photosensitive unit 11 without being filtered by the filtering unit 21.

[0142] According to an embodiment of the third aspect, an electronic device includes the above-mentioned spectral chip.

[0143] According to the electronic device of the present application, the photosensitive layer 1 and the filter layer 2 are connected by the filling layer 4, and the glass layer 3 is located on the side of the filter layer 2 away from the photosensitive layer 1, so that the glass layer 3 will not affect the light transmission between the filter layer 2 and the photosensitive layer 1, that is, the light passing through the filter layer 2 can reach the photosensitive layer 1 without passing through the glass layer 3, thereby shortening the distance between the filter layer 2 and the photosensitive layer 1, shortening the propagation distance of the light, and being beneficial to improving the quality of the spectral chip.

[0144] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A spectral chip, characterized in that: include: A photosensitive layer, comprising a plurality of photosensitive units; A filter layer is arranged on one side of the photosensitive layer, the filter layer comprises a plurality of filter units, the plurality of filter units are arranged opposite to the plurality of photosensitive units one by one, and the filter units are located on the photosensitive path of the photosensitive units; A glass layer, arranged on a side of the filter layer away from the photosensitive layer; The filling layer is arranged between the photosensitive layer and the filter layer, and connects the photosensitive layer and the filter layer.

2. The spectral chip according to claim 1, characterized in that: The filling layer includes a first filling layer and a second filling layer. The first filling layer is arranged on a side of the filter layer away from the glass layer, and the second filling layer is arranged on a side of the photosensitive layer facing the filter layer. The first filling layer and the second filling layer are connected.

3. The spectral chip according to claim 2, characterized in that: The first filling layer covers the filter layer, and the second filling layer covers the photosensitive layer.

4. The spectral chip according to claim 2, characterized in that: The first filling layer and the second filling layer are connected by bonding.

5. The spectral chip according to any one of claims 1 to 4, characterized in that: The thickness of the glass layer is 100nm-200nm.

6. The spectral chip according to any one of claims 1 to 4, characterized in that: A plurality of light-gathering units are arranged on a side of the glass layer away from the light-filtering unit, and the plurality of light-gathering units are arranged opposite to the plurality of light-filtering units one by one.

7. The spectral chip according to claim 6, characterized in that: The photosensitive unit is formed with a photosensitive area, the photosensitive area is arranged opposite to the filter unit, and the photosensitive area is located within the orthographic projection of the filter unit on the photosensitive unit.

8. The spectral chip according to claim 7, characterized in that: The photosensitive area is located within the orthographic projection of the light-focusing unit on the photosensitive unit.

9. The spectral chip according to claim 6, characterized in that: The orthographic projection of the focusing unit on the glass layer is within the orthographic projection of the filtering unit on the glass layer.

10. An electronic device, characterized in that: Comprising the spectral chip as described in any one of claims 1 to 9.

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