Light-emitting device and display device

Abstract

The embodiment of the utility model provides a light-emitting device and a display device, the light-emitting device comprises a substrate, a light-emitting chip, a quantum dot layer, a heat conduction layer and a packaging glue layer, the light-emitting chip is arranged on the substrate, the quantum dot layer covers the light-emitting chip, and the heat conduction layer covers the light-emitting chip. The heat conduction layer covers the surface of one side, far away from the light-emitting chip, of the quantum dot layer, and the packaging adhesive layer covers the surface of one side, far away from the quantum dot layer, of the heat conduction layer.

Description

Technical Field

[0001] The present application relates to the technical field of light-emitting devices, and in particular to a light-emitting device and a display device. Background Art

[0002] With the development of quantum dot display technology, quantum dot light-emitting devices are increasingly widely used. In related technologies, the heat dissipation effect of quantum dot light-emitting devices is poor, and the heat generated during the power-on light-emitting process is easily accumulated, causing the temperature of the quantum dots to rise rapidly, thereby causing the performance of the quantum dots to decline or even fail. Utility Model Content

[0003] The embodiments of the present application provide a light-emitting device and a display device, which have better heat dissipation effect, can ensure that the quantum dots are maintained at a relatively ideal operating temperature, and effectively reduce the temperature rise of the quantum dots and the risk of failure caused thereby.

[0004] On the one hand, an embodiment of the present application provides a light-emitting device, including a substrate, a light-emitting chip, a quantum dot layer, a thermal conductive layer and an encapsulation adhesive layer, wherein the light-emitting chip is arranged on the substrate, the quantum dot layer covers the light-emitting chip, the thermal conductive layer covers a side surface of the quantum dot layer away from the light-emitting chip, and the encapsulation adhesive layer covers a side surface of the thermal conductive layer away from the quantum dot layer.

[0005] In some embodiments, the light emitting device further includes a fluorescence conversion layer, and the fluorescence conversion layer is disposed between the quantum dot layer and the thermal conductive layer.

[0006] In some embodiments, the light emitting device further includes a fluorescence conversion layer, and the fluorescence conversion layer is disposed between the heat conductive layer and the packaging glue layer.

[0007] In some embodiments, the light-emitting device includes a fluorescence conversion layer and two layers of the thermal conductive layer, the fluorescence conversion layer is arranged between the quantum dot layer and the encapsulation glue layer, one layer of the thermal conductive layer is arranged between the quantum dot layer and the fluorescence conversion layer, and the other layer of the thermal conductive layer is arranged between the fluorescence conversion layer and the encapsulation glue layer.

[0008] In some embodiments, the light-emitting device also includes a light-transmitting packaging shell, which is arranged on a side surface of the substrate on which the light-emitting chip is provided, and the light-transmitting packaging shell and the substrate are combined to form a packaging cavity, and the light-emitting chip, quantum dot layer, thermal conductive layer and packaging glue layer are respectively arranged in the packaging cavity.

[0009] In some embodiments, the light-transmitting packaging shell is a silicone lens.

[0010] In some embodiments, the quantum dot layer is a quantum dot-mesoporous silicon layer.

[0011] In some embodiments, the light-emitting device includes a plurality of light-emitting chips, the plurality of light-emitting chips are respectively disposed on the substrate, and the quantum dot layer covers the plurality of light-emitting chips.

[0012] In some embodiments, the light emitting chip is Mini LED or Micro LED.

[0013] On the other hand, an embodiment of the present application provides a display device, comprising the light-emitting device described in any of the above embodiments.

[0014] The embodiment of the present application sets a thermal conductive layer on the surface of the quantum dot layer away from the light-emitting chip. The thermal conductive layer can be used to quickly absorb the heat of the quantum dot layer and then dissipate it to the outside through the packaging glue layer, thereby avoiding heat accumulation in the quantum dot layer and keeping the quantum dot layer at a more ideal operating temperature, thereby reducing the operating temperature rise of the quantum dots in the quantum dot layer and the failure risk caused by it. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 is a cross-sectional structural diagram of a light emitting device provided in some embodiments of the present application;

[0017] Figure 2 is another cross-sectional structural diagram of a light emitting device provided in some embodiments of the present application;

[0018] Figure 3 is another cross-sectional structural diagram of a light emitting device provided in some embodiments of the present application;

[0019] Figure 4 is another cross-sectional structural diagram of a light emitting device provided in some embodiments of the present application;

[0020] Figure 5 This is another cross-sectional structural diagram of the light-emitting device provided in some embodiments of the present application.

[0021] Description of main component symbols:

[0022] 1-light-emitting device, 10-substrate, 20-light-emitting chip, 30-quantum dot layer, 40-heat-conducting layer, 41-first heat-conducting layer, 42-second heat-conducting layer, 50-packaging glue layer, 60-fluorescent conversion layer, 70-light-transmitting packaging shell. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0024] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0025] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0026] The use of "suitable for" or "configured to" in this application is meant to be open and inclusive language, which does not exclude devices that are suitable for or configured to perform additional tasks or steps. In addition, the use of "based on" is meant to be open and inclusive, because the process, step, calculation or other action "based on" one or more stated conditions or values ​​can be based on additional conditions or values ​​beyond the stated values ​​in practice.

[0027] In this application, the word "exemplary" is used to mean "used as an example, illustration, or description." Any embodiment described in this application as "exemplary" is not necessarily to be construed as being preferred or advantageous over other embodiments. The following description is given to enable any technician in the field to implement and use the present application. In the following description, details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the present application can be implemented without using these specific details. In other instances, well-known structures and processes will not be elaborated in detail to avoid obscuring the description of the present application with unnecessary details. Therefore, the present application is not intended to be limited to the embodiments shown, but is consistent with the widest scope consistent with the principles and features disclosed in the present application.

[0028] like Figure 1 As shown, on the one hand, the embodiment of the present application provides a light-emitting device 1, which has a better heat dissipation effect, can ensure that the quantum dots are maintained at a relatively ideal operating temperature, and effectively reduce the temperature rise of the quantum dots and the failure risk caused thereby.

[0029] The light emitting device 1 comprises a substrate 10, a light emitting chip 20, a quantum dot layer 30, a heat conducting layer 40 and a packaging adhesive layer 50. The type of the substrate 10 can be determined according to actual needs, and can be, for example, a rigid printed circuit board, a flexible circuit board, etc., which is not limited in the present embodiment.

[0030] The light-emitting chip 20 is arranged on the substrate 10, and the light-emitting chip 20 can be powered by the circuit layer on the substrate 10, so that the light-emitting chip 20 emits light of a preset wavelength. The setting process of the light-emitting chip 20 on the substrate 10 can be determined according to actual needs, and can be set by a die-bonding process such as patch welding, which is not limited in the embodiment of the present application. The type of the light-emitting chip 20 can be determined according to actual needs, and can be, for example, an ultraviolet chip, a blue chip, a three-primary color chip, etc., which is not limited in the embodiment of the present application. In some embodiments, the light-emitting chip 20 can be Mini LED or MicroLED.

[0031] The quantum dot layer 30 covers the light emitting chip 20 to wrap and cover the light emitting surface of the light emitting chip 20, and a plurality of quantum dots are arranged in the quantum dot layer 30. When the light emitting chip 20 emits light, the light emitted by it enters the quantum dot layer 30, so that the quantum dots in the quantum dot layer 30 are excited to emit light of a preset wavelength, such as blue light. At the same time, the heat generated by the light emitting chip 20 also enters the quantum dot layer 30, causing the temperature of the quantum dot layer 30 to rise.

[0032] The heat-conducting layer 40 covers the surface of the quantum dot layer 30 on one side away from the light-emitting chip 20. The heat-conducting layer 40 is made of a material with a high thermal conductivity, and can quickly absorb the heat of the quantum dot layer 30 to prevent heat from accumulating in the quantum dot layer 30, thereby keeping the quantum dot layer 30 at a relatively ideal operating temperature, reducing the operating temperature rise of the quantum dots in the quantum dot layer 30 and the risk of failure caused thereby. The material type of the heat-conducting layer 40 can be determined according to actual needs, and can be a material type with a high thermal conductivity such as boron nitride, aluminum nitride, etc., which is not limited in the embodiments of the present application.

[0033] The encapsulation layer 50 covers the side surface of the thermal conductive layer 40 away from the quantum dot layer 30, and can perform reliable encapsulation and water-oxygen isolation on the side surface of the thermal conductive layer 40, thereby preventing water and oxygen molecules in the external environment from invading the quantum dot layer 30 and the light-emitting chip 20, thereby ensuring the reliability and stability of the light-emitting device 1. In addition, the thermal conductive layer 40 can transfer the heat absorbed from the quantum dot layer 30 to the encapsulation layer 50, and then dissipate it to the outside through the encapsulation layer 50.

[0034] Compared with the related art, the embodiment of the present application sets a thermal conductive layer 40 on the surface of the quantum dot layer 30 away from the light-emitting chip 20. The thermal conductive layer 40 can be used to quickly absorb the heat of the quantum dot layer 30 and then dissipate it to the outside through the packaging glue layer 50, thereby avoiding heat accumulation in the quantum dot layer 30 and keeping the quantum dot layer 30 at a more ideal operating temperature, thereby reducing the operating temperature rise of the quantum dots in the quantum dot layer 30 and the failure risk caused by it.

[0035] The number of light-emitting chips 20 provided in the light-emitting device 1 can be determined according to actual needs, and can be one or more, which is not limited in the embodiments of the present application. In some embodiments, the light-emitting device 1 may include a plurality of light-emitting chips 20, and the plurality of light-emitting chips 20 are respectively provided on the substrate 10, and the quantum dot layer 30 covers the plurality of light-emitting chips 20. By providing a plurality of light-emitting chips 20 on the substrate 10, the light-emitting power and light-emitting brightness of the light-emitting device 1 can be increased.

[0036] The type of quantum dot layer 30 can be determined according to actual needs, and the embodiments of the present application do not limit this. In some embodiments, the quantum dot layer 30 can be a quantum dot-mesoporous silicon layer. Here, the quantum dot-mesoporous silicon layer includes quantum dot-mesoporous silicon luminescent composite microspheres, which have high quantum dot dispersibility and large specific surface area. The material of the quantum dot can be determined according to actual needs, and can use material types such as cadmium selenide (CdSe), zinc sulfide (ZnS), etc., and the embodiments of the present application do not limit this.

[0037] like Figure 2As shown, in some embodiments, the light emitting device 1 may include a fluorescence conversion layer 60 and a heat conducting layer 40, and the fluorescence conversion layer 60 may be disposed between the quantum dot layer 30 and the heat conducting layer 40. The fluorescence conversion layer 60 may be made of a fluorescent material such as a fluorescent powder, and perform color conversion on the preset wavelength light entering therein; for example, the quantum dot layer 30 may emit blue light under the excitation of the light emitted by the light emitting chip 20, and the fluorescence conversion layer 60 may convert the blue light emitted by the quantum dot layer 30 into red light and green light, thereby obtaining the required three primary colors of light.

[0038] Here, the thermal conductive layer 40 can quickly absorb the heat of the fluorescent conversion layer 60 and reduce the temperature of the fluorescent conversion layer 60, so that the heat of the quantum dot layer 30 can be transferred to the thermal conductive layer 40 through the fluorescent conversion layer 60; in this way, the heat generated by the light-emitting chip 20 and the heat generated by the operation of the fluorescent conversion layer 60 can be absorbed and dissipated through the thermal conductive layer 40, avoiding the accumulation of the above-mentioned heat in the quantum dot layer 30, thereby maintaining the quantum dot layer 30 at a more ideal operating temperature, thereby reducing the operating temperature rise of the quantum dots in the quantum dot layer 30 and the failure risk caused thereby.

[0039] like Figure 3 As shown, in other embodiments, the light emitting device 1 may include a fluorescence conversion layer 60 and a heat conductive layer 40, and the fluorescence conversion layer 60 may be disposed between the heat conductive layer 40 and the encapsulation layer 50. The characteristics of the fluorescence conversion layer 60 are described above and will not be described here. Here, the heat conductive layer 40 can quickly absorb the heat of the quantum dot layer 30, and then conduct it to the encapsulation layer 50 through the fluorescence conversion layer 60, and dissipate it to the outside through the encapsulation layer 50, so as to avoid heat accumulation in the quantum dot layer 30 and keep the quantum dot layer 30 at a more ideal working temperature, thereby reducing the working temperature rise of the quantum dots in the quantum dot layer 30 and the failure risk caused thereby.

[0040] like Figure 4As shown, in some other embodiments, the light-emitting device 1 may include a fluorescence conversion layer 60 and two heat-conducting layers 40, and the fluorescence conversion layer 60 is disposed between the quantum dot layer 30 and the encapsulation glue layer 50. The characteristics of the fluorescence conversion layer 60 are described above and will not be repeated here. The two heat-conducting layers 40 are respectively a first heat-conducting layer 41 and a second heat-conducting layer 42, the first heat-conducting layer 41 is disposed between the quantum dot layer 30 and the fluorescence conversion layer 60, and the second heat-conducting layer 42 is disposed between the fluorescence conversion layer 60 and the encapsulation glue layer 50. In this way, the first heat-conducting layer 41 can transfer the heat of the quantum dot layer 30 to the fluorescence conversion layer 60, and the second heat-conducting layer 42 can transfer the heat of the fluorescence conversion layer 60 to the encapsulation glue layer 50, and then dissipate it to the outside through the encapsulation glue layer 50, so that the light-emitting device 1 has better heat dissipation effect and thermal stability, avoids heat accumulation in the quantum dot layer 30, keeps the quantum dot layer 30 at a more ideal working temperature, thereby reducing the working temperature rise of the quantum dots in the quantum dot layer 30 and the failure risk caused thereby.

[0041] The material of the encapsulation glue layer 50 can be determined according to actual needs, and various light-transmitting encapsulation glue materials can be used, which is not limited in the present embodiment. In some embodiments, the encapsulation glue layer 50 can be made of a highly thermally conductive light-transmitting encapsulation glue to further improve the heat dissipation effect and thermal stability of the light-emitting device 1.

[0042] like Figure 5 As shown, in some embodiments, the light emitting device 1 may further include a light-transmitting packaging shell 70. The light-transmitting packaging shell 70 is disposed on a side surface of the substrate 10 on which the light-emitting chip 20 is disposed. The light-transmitting packaging shell 70 and the substrate 10 enclose a packaging cavity, and the light-emitting chip 20, the quantum dot layer 30, the heat-conducting layer 40 and the packaging adhesive layer 50 are respectively disposed in the packaging cavity. In this way, the light-transmitting packaging shell 70 can reliably encapsulate the light-emitting chip 20 and the quantum dot layer 30, and prevent the intrusion of external water and oxygen from affecting the performance of the light-emitting device 1.

[0043] The type of the light-transmitting packaging shell 70 can be determined according to actual needs, and the embodiments of the present application do not limit this. In some examples, the light-transmitting packaging shell 70 can be a silicone lens. The silicone lens is made of a transparent silicone material, which can refract or reflect the light passing therethrough, thereby increasing the light-emitting angle and light-emitting range of the light-emitting device 1. Here, the silicone lens can be pre-made by injection molding, and then bonded to the substrate 10 by a transparent adhesive; or, the silicone lens can be directly formed on the substrate 10 by dispensing. The type of the silicone lens can be determined according to actual needs, and can be, for example, a reflective lens, a refractive lens, etc., and the embodiments of the present application do not limit this.

[0044] On the other hand, an embodiment of the present application provides a display device, which includes a light-emitting device 1 provided in any of the above embodiments. The type of the display device can be determined according to actual needs, and can be a direct-type display device, an edge-type display device, etc., which is not limited in the embodiments of the present application. The purpose of the display device can be determined according to actual needs, and can be used as a device with a display function such as a television, a monitor, a smart terminal, or a component thereof, which is not limited in the embodiments of the present application. Since the display device has the above-mentioned light-emitting device 1, the above-mentioned light-emitting device 1 has a better heat dissipation effect, which can ensure that the quantum dots are maintained at a more ideal operating temperature, effectively reduce the temperature rise of the quantum dots and the risk of failure caused by it, so that the display device has higher working stability and reliability.

[0045] The light-emitting device and display device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A light emitting device, characterized in that: It includes a substrate, a light-emitting chip, a quantum dot layer, a heat-conducting layer and an encapsulating adhesive layer, wherein the light-emitting chip is arranged on the substrate, the quantum dot layer covers the light-emitting chip, the heat-conducting layer covers a side surface of the quantum dot layer away from the light-emitting chip, and the encapsulating adhesive layer covers a side surface of the heat-conducting layer away from the quantum dot layer.

2. The light emitting device according to claim 1, characterized in that: The light emitting device further includes a fluorescence conversion layer, which is disposed between the quantum dot layer and the heat conductive layer.

3. The light emitting device according to claim 1, characterized in that: The light emitting device further comprises a fluorescence conversion layer, and the fluorescence conversion layer is arranged between the heat conducting layer and the packaging glue layer.

4. The light emitting device according to claim 1, characterized in that: The light-emitting device includes a fluorescence conversion layer and two layers of the heat-conducting layer, wherein the fluorescence conversion layer is arranged between the quantum dot layer and the encapsulation glue layer, wherein one layer of the heat-conducting layer is arranged between the quantum dot layer and the fluorescence conversion layer, and the other layer of the heat-conducting layer is arranged between the fluorescence conversion layer and the encapsulation glue layer.

5. The light emitting device according to claim 1, characterized in that: The light-emitting device also includes a light-transmitting packaging shell, which is arranged on a side surface of the substrate on which the light-emitting chip is arranged, and the light-transmitting packaging shell and the substrate are enclosed to form a packaging cavity, and the light-emitting chip, quantum dot layer, thermal conductive layer and packaging glue layer are respectively arranged in the packaging cavity.

6. The light emitting device according to claim 5, characterized in that: The light-transmitting packaging shell is a silicone lens.

7. The light emitting device according to claim 1, characterized in that: The quantum dot layer is a quantum dot-mesoporous silicon layer.

8. The light emitting device according to claim 1, characterized in that: The light-emitting device comprises a plurality of light-emitting chips, wherein the plurality of light-emitting chips are respectively arranged on the substrate, and the quantum dot layer covers the plurality of light-emitting chips.

9. The light emitting device according to claim 1, characterized in that: The light-emitting chip is Mini LED or Micro LED.

10. A display device, characterized in that: A light emitting device comprising the light emitting device according to any one of claims 1 to 9.

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