Packaging structure of power supply chip and power supply module

By using the bonding connection on the base island and the combination of insulating gasket and conductive adhesive in the power chip package structure, the problems of heat dissipation difference and large power radiation in the prior art are solved, and better heat dissipation effect and radiation reduction are achieved. , improves overall performance.

CN222300666UActive Publication Date: 2025-01-03SUZHOU POWERON IC DESIGN
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Patent Information

Application Number
CN202421638142.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-07-11
Publication Date
2025-01-03
Estimated Expiration
2034-07-11

AI Technical Summary

Technical Problem

The prior art has poor heat dissipation effect and large radiation of the power system in the packaging of power control chips and longitudinal power devices, making it difficult to simultaneously improve heat dissipation and reduce radiation.

Method used

The bonding connection between the power control die and the longitudinal power device is adopted on the base island, and indirectly connected with the conductive glue is used to enhance the use of the heat dissipation layer and the setting of the ceramic heat dissipation layer to solve the problems of insulation voltage resistance and heat dissipation.

Benefits of technology

It realizes that while maintaining or improving the heat dissipation effect, the power supply radiation is reduced, and the overall performance of the packaging structure of the power supply chip is improved through the combination of insulating gaskets and conductive adhesives.

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Abstract

The utility model relates to the technical field of power supply chips, in particular to a packaging structure of a power supply chip and a power supply module. The packaging structure of the power supply chip comprises a base island and pins, the base island is provided with a power supply control tube core and a longitudinal power device which are in bonding connection with each other, and an insulating spacer is arranged between the longitudinal power device and the base island; the longitudinal power device is adhered to the insulating spacer through a conductive adhesive; and the insulating spacer is adhered to the base island through insulating glue. According to the packaging structure of the power supply chip, heat dissipation can be enhanced, and power supply radiation can be reduced.
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Description

Technical Field

[0001] The present application relates to the technical field of power chips, and in particular to a packaging structure of a power chip and a power module. Background Art

[0002] In order to facilitate the electrical connection between the chip and the electronic device and to protect the chip, the chip needs to be packaged to form a chip packaging structure. In multi-chip packaging technology, the sealing technology is often used to reduce the overall size of the chip.

[0003] The prior art generally adopts two methods when packaging the power control chip and the vertical power device at the same time. The first method is to place the power control chip and the vertical power device on two base islands respectively, and the drain end on the back of the vertical power device is electrically connected to the base island where it is located through conductive glue. The vertical power device can only dissipate heat through the high-voltage pin, and the heat dissipation effect is poor. The second method is that the power control chip and the vertical power device use the same base island, the control chip and the vertical power device are stacked and packaged, the back of the vertical power device is electrically connected to the base island through conductive glue, and the power control die is placed on the front of the vertical power device. The power control die is bonded to the pins of the vertical power device and the packaged base island through wire bonding. Because the two chips are stacked vertically, the heat dissipation of the chip will be improved, but the radiation area of ​​the high-voltage pin is large, resulting in poor radiation of the power system. Summary of the invention

[0004] In order to solve at least one problem existing in the prior art, the purpose of the present application is to provide a packaging structure of a power chip and a power module, which can reduce power radiation while enhancing heat dissipation.

[0005] To achieve the above-mentioned purpose, the present application provides a packaging structure of a power chip, including a base island and pins, wherein a power control die and a vertical power device bonded to each other are arranged on the base island, and an insulating gasket is arranged between the vertical power device and the base island; the vertical power device is arranged on the insulating gasket by conductive adhesive; the insulating gasket is arranged on the base island by insulating adhesive.

[0006] Furthermore, the power control die is mounted on the base island by means of a first conductive adhesive.

[0007] Further, the power control die includes: a first type of connection pad, a second type of connection pad and a third type of connection pad; the vertical power device includes: a fourth type of connection pad and a fifth type of connection pad; a sixth type of connection pad is arranged on the insulating pad; the pins include: a first type of pin, a second type of pin and a third type of pin;

[0008] Wherein, each of the first-type pads is bonded to each of the first-type pins via a connecting member, each of the second-type connection pads is bonded to each of the fourth-type connection pads via a connecting member, and each of the third-type connection pads is bonded to the base island via a connecting member;

[0009] Wherein, each of the fifth type connection pads is bonded to the base island via a connection member;

[0010] Wherein, each of the sixth type connection pads is bonded to each of the second type pins via a connecting member;

[0011] Wherein, each of the third type pins is connected to the base island.

[0012] Furthermore, the power control die also includes:

[0013] The seventh type of connecting pads, each of the seventh type of connecting pads is bonded to each of the second type of pins through a connecting component.

[0014] Furthermore, the control die is bonded onto the vertical power device by a third insulating adhesive.

[0015] Further, the power control die includes: a first type of connection pad, a second type of connection pad and a third type of connection pad; the vertical power device includes: a fourth type of connection pad and a fifth type of connection pad; a sixth type of connection pad is arranged on the insulating pad; the pins include: a first type of pin, a second type of pin and a third type of pin;

[0016] Wherein, each of the first-type pads is bonded to each of the first-type pins via a connecting member, each of the second-type connection pads is bonded to each of the fourth-type connection pads via a connecting member, and each of the third-type connection pads is bonded to the base island via a connecting member;

[0017] Wherein, each of the fifth type connection pads is bonded to the base island via a connection member;

[0018] Wherein, each of the sixth type connection pads is bonded to each of the second type pins via a connecting member;

[0019] Wherein, each of the third type pins is connected to the base island.

[0020] Furthermore, the power control die also includes:

[0021] The seventh type of connecting pads, each of the seventh type of connecting pads is bonded to each of the second type of pins through a connecting component.

[0022] To achieve the above objectives, the present application provides a power module, including the packaging structure of the power chip as described above.

[0023] The packaging structure of the power chip provided in the present application is provided with a ceramic heat dissipation layer, which solves the problems of insulation withstand voltage and heat dissipation.

[0024] The packaging structure of the power chip of the present application places the power control die and the vertical power device on the same packaging base island, and uses an insulating gasket placed between the vertical power device and the base island, so that the vertical power device and the gasket are insulated, which can enhance heat dissipation and reduce power radiation.

[0025] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent from the description, or may be understood by practicing the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings are used to provide a further understanding of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application. In the accompanying drawings:

[0027] Figure 1 A top view of the packaging structure of the power chip of Example 1 of the present application;

[0028] Figure 2 for Figure 1 A cross-sectional view of

[0029] Figure 3 A top view of the packaging structure of the power chip of Example 2 of the present application;

[0030] Figure 4 for Figure 3 A cross-sectional view of

[0031] Figure 5 A top view of the packaging structure of the power chip of Example 3 of the present application;

[0032] Figure 6 A top view of the packaging structure of the power chip of Example 4 of the present application;

[0033] In the figure: 10-base island, 100-first pin, 101-second pin, 102-third pin, 103-fourth pin, 104-fifth pin, 105-sixth pin, 106-seventh pin, 107-eighth pin, 108-ninth pin, 109-tenth pin, 110-eleventh pin, 20-power control die, 21-vertical power device, 22-insulating gasket, 200-first connecting gasket, 201-second connecting gasket, 202-third connecting gasket, 203-first Four connecting gaskets, 204-fifth connecting gasket, 205-sixth connecting gasket, 206-seventh connecting gasket, 207-eighth connecting gasket, 210-ninth connecting gasket, 211-tenth connecting gasket, 212-eleventh connecting gasket, 213-twelfth connecting gasket, 220-thirteenth connecting gasket, 30-connecting component, 301-first conductive glue, 302-first insulating glue, 303-second conductive glue, 304-second insulating glue, 305-third conductive glue, 306-third insulating glue. DETAILED DESCRIPTION

[0034] In order to better understand and explain the present application, the present application will be further described in detail below in conjunction with the accompanying drawings. The present application is not limited to these specific implementations. On the contrary, modifications or equivalent replacements made to the present application should be included in the scope of the claims of the present application.

[0035] It should be noted that many specific details are given in the specific embodiments below. Those skilled in the art should understand that the present application can also be implemented without these specific details. In the multiple specific embodiments given below, the principles, structures and components well known in the art are not described in detail in order to highlight the main purpose of the present application.

[0036] It should be understood that although the terms "first", "second", etc. may be used here to describe various units or data, these units or data should not be limited by these terms. These terms are used only to distinguish one feature from another. For example, without departing from the scope of the exemplary embodiment, a first feature may be referred to as a second feature, and similarly, a second feature may be referred to as a first feature.

[0037] The packaging structure of the power chip and the low-side switch device will be described in detail below with reference to specific embodiments.

[0038] Example 1

[0039] Embodiment 1 of the present application proposes a packaging structure for a power chip, which can enhance heat dissipation while reducing power radiation. Figure 1-2 The packaging structure of the power chip of this application is described in detail:

[0040] See also Figure 1 , the packaging structure of the power chip includes:

[0041] Key Island 10;

[0042] Pins, including a first pin 100, a second pin 101, a third pin 102, a fourth pin 103, a fifth pin 104, a sixth pin 105, a seventh pin 106, an eighth pin 107, a ninth pin 108, a tenth pin 109, and an eleventh pin 110;

[0043] Among them, the first pin 100, the second pin 101, and the third pin 102 are first-category pins, the fifth pin 104 is a second-category pin, the sixth pin 105, the seventh pin 106, the eighth pin 107, the ninth pin 108, the tenth pin 109, and the eleventh pin 110 are third-category pins, and the fourth pin 103 is a fourth-category pin.

[0044] The power control die 20 is bonded on the base island 10 by a first conductive adhesive 301, and includes: a first connection pad 200, a second connection pad 201, a third connection pad 202, a fourth connection pad 203, a fifth connection pad 204, a sixth connection pad 205, and a seventh connection pad 206;

[0045] Among them, the second connection gasket 201, the third connection gasket 202, and the fourth connection gasket 203 are first-type connection gaskets, the fifth connection gasket 204, the sixth connection gasket 205, and the seventh connection gasket 206 are second-type connection gaskets, and the first connection gasket 200 is a third-type connection gasket.

[0046] The insulating gasket 22 is bonded on the base island 10 by means of the first insulating adhesive 302 , and a sixth type of connecting gasket, namely the thirteenth connecting gasket 220 , is arranged on the insulating gasket 22 .

[0047] The vertical power device 21 is bonded on the insulating gasket 22 by the second conductive adhesive 303, and includes: a ninth connecting gasket 210, a tenth connecting gasket 211, an eleventh connecting gasket 212, and a twelfth connecting gasket 213;

[0048] Among them, the ninth connecting gasket 210 , the tenth connecting gasket 211 , and the eleventh connecting gasket 212 are fourth-type connecting gaskets, and the twelfth connecting gasket 213 is a fifth-type connecting gasket.

[0049] In this embodiment, the second connecting pad 201, the third connecting pad 202, and the fourth connecting pad 203 are bonded to the first pin 100, the second pin 101, and the third pin 102 respectively through the connecting component 30; the fifth connecting pad 204, the sixth connecting pad 205, and the seventh connecting pad 206 are bonded to the ninth connecting pad 210, the tenth connecting pad 211, and the eleventh connecting pad 212 respectively through the connecting component 30, the first connecting pad 200 is bonded to the base island 10 through the connecting component 30; the twelfth connecting pad 213 is bonded to the base island 10 through the connecting component 30; and the thirteenth connecting pad 220 is bonded to the fifth pin 104 through the connecting component 30.

[0050] It should be noted that the connecting member 30 is the wiring.

[0051] It can be understood that the number of pins, the number of various gaskets on the longitudinal power device 21, and the number of various gaskets on the power control die 20 are related to the specific connection structure of the power chip, which is not the invention point of this application and can be adaptively set as needed, and will not be elaborated here.

[0052] Example 2

[0053] Embodiment 2 of the present application proposes a packaging structure for a power chip, which can enhance heat dissipation while reducing power radiation. Figure 3-4 The packaging structure of the power chip of Example 2 of the present application is described in detail:

[0054] The difference between Example 2 of the present application and Example 1 is that:

[0055] The insulating gasket 22 is bonded on the base island 10 by the second insulating adhesive 304 .

[0056] The vertical power device 21 is bonded on the insulating spacer by the third conductive adhesive 305 .

[0057] The power control die 20 is bonded on the vertical power device 21 through the third insulation 306 .

[0058] Example 3

[0059] Embodiment 3 of the present application proposes a packaging structure of a power chip, which can enhance heat dissipation while reducing power radiation. Figure 5 The packaging structure of the power chip of Example 3 of the present application is described in detail:

[0060] The difference between Example 3 of the present application and Example 1 is that:

[0061] The power control die 20 further includes: a seventh type of connection pad, namely, an eighth connection pad 207 , which is bonded to the second type of pin, namely, the fifth pin 104 , through a connection member 30 .

[0062] Example 4

[0063] Embodiment 4 of the present application proposes a packaging structure for a power chip, which can enhance heat dissipation while reducing power radiation. Figure 6 The packaging structure of the power chip of Example 4 of the present application is described in detail:

[0064] The difference between Example 4 of the present application and Example 2 is that:

[0065] The power control die 20 further includes: a seventh type of connection pad, namely, an eighth connection pad 207 , which is bonded to the second type of pin, namely, the fifth pin 104 , through a connection member 30 .

[0066] Example 5

[0067] Embodiment 5 of the present application provides a power module, comprising the packaging structure of the power chip as described above.

[0068] It should be noted that the specific numerical values ​​mentioned above are only used as examples to illustrate the implementation of the present application in detail, and should not be understood as limiting the present application. In other examples or implementations or embodiments, other numerical values ​​can be selected according to the present application, and are not specifically limited here.

[0069] Those skilled in the art can understand that the above are only preferred embodiments of the present application and are not intended to limit the present application. Although the present application is described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions recorded in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A packaging structure of a power chip, comprising a base island and pins, wherein a power control die and a vertical power device bonded to each other are arranged on the base island, characterized in that: An insulating gasket is arranged between the vertical power device and the base island; the vertical power device is mounted on the insulating gasket by conductive adhesive; and the insulating gasket is mounted on the base island by insulating adhesive.

2. The packaging structure of the power chip according to claim 1, characterized in that: The power control die is mounted on the base island by conductive adhesive.

3. The packaging structure of the power chip according to claim 2, characterized in that: The power control die includes: a first type of connection pad, a second type of connection pad and a third type of connection pad; the vertical power device includes: a fourth type of connection pad and a fifth type of connection pad; a sixth type of connection pad is arranged on the insulating pad; the pins include: a first type of pin, a second type of pin and a third type of pin; Wherein, each of the first-type connection pads is bonded to each of the first-type pins via a connection member, each of the second-type connection pads is bonded to each of the fourth-type connection pads via a connection member, and each of the third-type connection pads is bonded to the base island via a connection member; Wherein, each of the fifth type connection pads is bonded to the base island via a connection member; Wherein, each of the sixth type connection pads is bonded to each of the second type pins via a connecting member; Wherein, each of the third type pins is connected to the base island.

4. The packaging structure of the power chip according to claim 3, characterized in that: The power control die also includes: The seventh type of connecting pads, each of the seventh type of connecting pads is bonded to each of the second type of pins through a connecting component.

5. The packaging structure of the power chip according to claim 1, characterized in that: The control tube core is arranged on the vertical power device by insulating adhesive.

6. The packaging structure of the power chip according to claim 5, characterized in that: The power control die includes: a first type of connection pad, a second type of connection pad and a third type of connection pad; the vertical power device includes: a fourth type of connection pad and a fifth type of connection pad; a sixth type of connection pad is arranged on the insulating pad; the pins include: a first type of pin, a second type of pin and a third type of pin; Wherein, each of the first-type connection pads is bonded to each of the first-type pins via a connection member, each of the second-type connection pads is bonded to each of the fourth-type connection pads via a connection member, and each of the third-type connection pads is bonded to the base island via a connection member; Wherein, each of the fifth type connection pads is bonded to the base island via a connection member; Wherein, each of the sixth type connection pads is bonded to each of the second type pins via a connecting member; Wherein, each of the third type pins is connected to the base island.

7. The packaging structure of the power chip according to claim 6, characterized in that: The power control die also includes: The seventh type of connecting pads, each of the seventh type of connecting pads is bonded to each of the second type of pins through a connecting component.

8. A power module, comprising: The packaging structure of the power chip according to any one of claims 1 to 7.