Silicon monoxide production equipment

Abstract

The utility model relates to silicon monoxide production equipment which comprises a high-temperature chamber, a transition chamber and a low-temperature chamber which are communicated in sequence, and the high-temperature chamber, the transition chamber and the low-temperature chamber are internally and respectively provided with mutually independent heat preservation components; mutually independent heat preservation assemblies are arranged in the high-temperature chamber, the transition chamber and the low-temperature chamber, heat preservation and temperature control are independently carried out on all the chambers, it is ensured that the temperature of all the chambers can be controlled within an effective area, the actual production requirement is met, and the effect of improving the preparation efficiency is achieved; besides, the transition chamber is provided with an independent heat preservation assembly for independent temperature control, it can be ensured that materials in the transition chamber are kept in a gas phase state and enter the low-temperature chamber to participate in the subsequent deposition step, and the situation that the material state in the transition chamber is changed due to insufficient temperature in the transition chamber is reduced as much as possible; and therefore, the deposition effect is improved.

Description

Technical Field

[0001] The utility model relates to the technical field related to silicon oxide production, in particular to silicon oxide production equipment. Background Art

[0002] The mainstream method for producing silicon iodine in China is vapor deposition, in which elemental silicon and silicon dioxide are mixed in nearly the same molar ratio and ground into micrometer-sized powder. The powder is then heated to a temperature above 1000°C in a vacuum environment for a disproportionate reaction, and silicon iodine overflows in the form of vapor. Under the action of pressure diffusion, it is carried to a place with a lower temperature and condensed into solid silicon iodine.

[0003] During the silicon oxide production process, the temperature requirements for different areas of the equipment are different, and the corresponding insulation requirements are also different; the current insulation structure of silicon oxide production equipment is mostly unpartitioned or has only two partitions, resulting in the actual temperature of different areas of the equipment being unable to meet actual needs, thereby affecting preparation efficiency. Utility Model Content

[0004] Based on this, it is necessary to provide a silicon oxide production equipment with relatively high preparation efficiency to address the problem that the temperature of each area of ​​the current silicon oxide production equipment cannot meet the actual needs, resulting in relatively low preparation efficiency.

[0005] The present application provides a silicon oxide production device, comprising a high temperature chamber, a transition chamber and a low temperature chamber which are connected in sequence, wherein the high temperature chamber, the transition chamber and the low temperature chamber are respectively provided with independent insulation components.

[0006] In one of the embodiments, a high-temperature insulation component is provided in the high-temperature chamber, and the high-temperature insulation component includes a graphite felt layer.

[0007] In one of the embodiments, the high temperature insulation component includes multiple layers of the graphite felt layers, and each of the graphite felt layers is stacked.

[0008] In one embodiment, the transition chamber includes a transition insulation component and a guide pipe, the guide pipe connects the high temperature chamber and the low temperature chamber, and the transition insulation component circumferentially surrounds and wraps the guide pipe.

[0009] In one of the embodiments, the transition insulation assembly completely covers the guide tube along the axial direction of the guide tube.

[0010] In one of the embodiments, a low-temperature insulation component is disposed in the low-temperature chamber, and the low-temperature insulation component includes a reflective screen and a low-temperature insulation layer.

[0011] In one embodiment, the low-temperature insulation layer is wrapped around the outside of the reflection screen.

[0012] In one embodiment, the high temperature chamber includes a high temperature furnace body and a high temperature furnace cover detachably fixed to the high temperature furnace body, and the low temperature chamber includes a low temperature furnace body and a low temperature furnace cover detachably fixed to the low temperature furnace body, and the high temperature furnace cover and the low temperature furnace cover are both provided with a furnace cover insulation layer on one side close to the corresponding furnace body.

[0013] In one of the embodiments, the furnace cover insulation layer on the high-temperature furnace cover is the same as the insulation component in the high-temperature chamber, and the furnace cover insulation layer on the low-temperature furnace cover is the same as the insulation component in the low-temperature chamber.

[0014] In one embodiment, the temperature in the high temperature chamber is maintained at 1200°C to 1600°C; the temperature in the transition chamber is maintained at 1200°C to 1600°C; and the temperature in the low temperature chamber is maintained at 700°C to 900°C.

[0015] The above-mentioned silicon iodide production equipment, by arranging independent insulation components in the high-temperature chamber, the transition chamber and the low-temperature chamber, independently insulates and controls the temperature of each chamber to ensure that the temperature of each chamber can be controlled within the effective area to meet the actual production needs and achieve the effect of improving the preparation efficiency; in addition, arranging an independent insulation component for the transition chamber for independent temperature control can ensure that the material in the transition chamber maintains a gas phase state, and maintains the gas phase state to enter the low-temperature chamber to participate in the subsequent deposition steps, thereby minimizing the situation where the material state in the transition chamber is changed due to insufficient temperature in the transition chamber, thereby causing incomplete product reaction, thereby improving the deposition effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic diagram of the cross-sectional structure of the silicon dioxide production equipment of the present application along the front view direction.

[0017] Figure numerals: 100, high temperature chamber; 110, high temperature furnace body; 111, crucible; 112, high temperature insulation assembly; 120, high temperature furnace cover; 200, transition chamber; 210, guide tube; 220, transition insulation assembly; 300, low temperature chamber; 310, low temperature furnace body; 311, inner tube; 312, low temperature insulation assembly; 320, low temperature furnace cover; 400, vacuum pump; 410, filter. DETAILED DESCRIPTION

[0018] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model, so the utility model is not limited by the specific embodiments disclosed below.

[0019] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0020] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present utility model, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0021] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0022] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0024] Please refer to Figure 1 As shown, the present application provides a silicon oxide production equipment, including a high temperature chamber 100, a transition chamber 200 and a low temperature chamber 300 which are connected in sequence, and the high temperature chamber 100, the transition chamber 200 and the low temperature chamber 300 are respectively provided with independent insulation components.

[0025] Under vacuum atmosphere, silicon dioxide gas generated in high temperature chamber 100 can enter low temperature chamber 300 under the guidance of guide tube 210, so that the raw materials can complete the steps of gas phase reaction and mixture precipitation in sequence, and the occurrence of incomplete reaction is prevented.

[0026] In the present application, independent insulation components are provided in the high temperature chamber 100, the transition chamber 200 and the low temperature chamber 300, and each chamber is independently insulated and temperature controlled to ensure that the temperature of each chamber can be controlled within the effective area to meet the actual production needs and achieve the effect of improving the preparation efficiency;

[0027] In addition, an independent insulation component is provided for the transition chamber 200 for independent temperature control, which can ensure that the material in the transition chamber 200 maintains a gas phase state and maintains the gas phase state to enter the low-temperature chamber 300 to participate in the subsequent deposition steps, thereby minimizing the change of the material state in the transition chamber 200 due to insufficient temperature in the transition chamber 200, thereby causing incomplete product reaction, thereby improving the deposition effect.

[0028] Please refer to Figure 1As shown, in some embodiments, a high-temperature insulation component 112 is provided in the high-temperature chamber 100 , and the high-temperature insulation component 112 includes a graphite felt layer; the graphite felt layer can not only play a role in heat preservation, but also play the role of fixing and supporting the crucible 111 and the high-temperature furnace body 110 .

[0029] Preferably, the high temperature insulation component 112 includes multiple layers of graphite felt layers, and each graphite felt layer is stacked.

[0030] Please refer to Figure 1 As shown, in some embodiments, the transition chamber 200 includes a transition insulation component 220 and a guide pipe 210, the guide pipe 210 connects the high temperature chamber 100 and the low temperature chamber 300, and the transition insulation component 220 circumferentially surrounds and wraps the guide pipe 210.

[0031] Specifically, a crucible 111 for containing raw materials is provided in the high-temperature chamber 100, and a high-temperature insulation component 112 is wrapped around the outside of the crucible 111; an inner cylinder 311 is provided in the low-temperature chamber 300, and a low-temperature insulation component 312 is wrapped around the outside of the inner cylinder 311; a guide tube 210 connects the crucible 111 and the inner cylinder 311, and a closed chamber is formed between the three to prevent gaseous products from leaking between the three and the corresponding insulation components.

[0032] Please refer to Figure 1 As shown, in some embodiments, the transition insulation assembly 220 completely covers the guide tube 210 along the axial direction of the guide tube 210 .

[0033] This ensures that the guide tube 210 is completely within the heating and insulation range, prevents the gas-phase material from condensing at the dead corner due to the existence of heating and insulation dead corners in the guide tube 210, and ensures that the gas-phase material can maintain the gas phase state and smoothly reach the inner tube 311.

[0034] Please refer to Figure 1 As shown, in some embodiments, a low-temperature insulation component 312 is provided in the low-temperature chamber 300, and the low-temperature insulation component 312 includes a reflective screen and a low-temperature insulation layer, wherein the low-temperature insulation layer is wrapped around the outside of the reflective screen; so as to form a temperature-controllable temperature field area, and wrap the inner cylinder 311 as a whole within the temperature field range.

[0035] Please refer to Figure 1 As shown, in some embodiments, the high temperature chamber 100 includes a high temperature furnace body 110 and a high temperature furnace cover 120 detachably fixed to the high temperature furnace body 110, and the low temperature chamber 300 includes a low temperature furnace body 310 and a low temperature furnace cover 320 detachably fixed to the low temperature furnace body 310, and the high temperature furnace cover 120 and the low temperature furnace cover 320 are both provided with a furnace cover insulation layer on one side close to the corresponding furnace body; by independently providing an insulation layer at the furnace cover position, heat leakage can be prevented to achieve a better insulation effect.

[0036] It is worth mentioning that in some embodiments, the furnace cover insulation layer on the high-temperature furnace cover 120 is the same as the insulation component in the high-temperature chamber 100 , and the furnace cover insulation layer on the low-temperature furnace cover 320 is the same as the insulation component in the low-temperature chamber 300 .

[0037] Exemplarily, the furnace cover insulation layer on the high-temperature furnace cover 120 is a stacked multi-layer graphite felt layer, and the furnace cover insulation layer on the low-temperature furnace cover 320 includes a reflective screen and a low-temperature insulation layer.

[0038] It can be understood that such an arrangement can ensure that the thermal insulation effects in the high temperature chamber 100 and the low temperature chamber 300 meet the respective production requirements, so as to achieve the effect of improving the preparation efficiency.

[0039] In addition, in some embodiments, the temperature in the high temperature chamber 100 is maintained at 1200°C ~ 1600°C; the temperature in the transition chamber 200 is maintained at 1200°C ~ 1600°C; the temperature in the low temperature chamber 300 is maintained at 700°C ~ 900°C; through calculation, simulation and experimental verification, when the internal temperature of each chamber is within the above range, the preparation efficiency of the silicon oxide production equipment is optimal and the yield is highest.

[0040] Please refer to Figure 1 As shown, in some embodiments, the high-temperature furnace body 110 and the low-temperature furnace body 310 are both opened upward and can be sealed by the corresponding high-temperature furnace cover 120 and the low-temperature furnace cover 320; that is, the high-temperature chamber 100 and the low-temperature chamber 300 adopt vertical material taking and discharging, and the vertical material discharging can ensure the radially symmetrical distribution of the raw materials in the crucible 111. As the reaction raw materials decrease, the distribution of the temperature field in the crucible 111 will not be affected, thereby ensuring the uniformity of the reaction heating temperature.

[0041] Specifically, when feeding, the high-temperature furnace cover 120 is lifted mechanically, and the raw materials are placed in a large-capacity crucible 111 as a whole. When discharging, the low-temperature furnace cover 320 is hoisted as a whole for discharging, and the operation is simple.

[0042] In some embodiments, the shells of the high-temperature furnace body 110 and the low-temperature furnace body 310 are both provided with a liquid cooling structure to prevent the shell temperature from being too high.

[0043] Please refer to Figure 1 As shown, in some embodiments, the silicon oxide production equipment also includes a vacuum pump 400 connected to the low-temperature chamber 300. The vacuum pump 400 can evacuate the closed space formed by the internal connection of the high-temperature chamber 100, the transition chamber 200 and the low-temperature chamber 300 to below 10Pa.

[0044] Please refer to Figure 1As shown, in some embodiments, the vacuum pump 400 is connected to the outer shell of the low-temperature furnace body 310, and a guide air hole is opened on the side of the inner cylinder 311 close to the vacuum pump 400. After the silicon dioxide gas enters the inner cylinder 311 from the guide tube 210, it first contacts with the cold matrix for collection and condenses, thereby avoiding the situation where the silicon dioxide gas is extracted from the guide air hole without condensation and deposition.

[0045] Please refer to Figure 1 As shown, in some embodiments, a filter 410 is further provided at the position where the vacuum pump 400 communicates with the low-temperature furnace body 310 to prevent nanoparticles from being drawn into the vacuum pump 400 .

[0046] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0047] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A silicon oxide production device, characterized in that: It comprises a high temperature chamber (100), a transition chamber (200) and a low temperature chamber (300) which are connected in sequence, wherein the high temperature chamber (100), the transition chamber (200) and the low temperature chamber (300) are respectively provided with mutually independent heat preservation components; The transition chamber (200) comprises a transition insulation component (220) and a guide pipe (210), wherein the guide pipe (210) is connected to the high temperature chamber (100) and the low temperature chamber (300), and the transition insulation component (220) surrounds and wraps the guide pipe (210) in a circumferential direction; The transition insulation component (220) completely covers the guide tube (210) along the axial direction of the guide tube (210).

2. The silicon dioxide production equipment according to claim 1, characterized in that: A high-temperature heat preservation component (112) is arranged in the high-temperature chamber (100), and the high-temperature heat preservation component (112) includes a graphite felt layer.

3. The silicon oxide production equipment according to claim 2, characterized in that: The high-temperature heat-insulating component (112) comprises multiple layers of graphite felt layers, each of which is stacked.

4. The silicon oxide production equipment according to claim 1, characterized in that: A low-temperature heat preservation component (312) is arranged in the low-temperature chamber (300), and the low-temperature heat preservation component (312) comprises a reflection screen and a low-temperature heat preservation layer.

5. The silicon oxide production equipment according to claim 4, characterized in that: The low-temperature heat-insulating layer is wrapped around the outer side of the reflecting screen.

6. The silicon oxide production equipment according to claim 1, characterized in that: The high temperature chamber (100) comprises a high temperature furnace body (110) and a high temperature furnace cover (120) detachably fixed to the high temperature furnace body (110); the low temperature chamber (300) comprises a low temperature furnace body (310) and a low temperature furnace cover (320) detachably fixed to the low temperature furnace body (310); and a furnace cover insulation layer is provided on one side of the high temperature furnace cover (120) and the low temperature furnace cover (320) close to the corresponding furnace body.

7. The silicon oxide production equipment according to claim 6, characterized in that: The furnace cover insulation layer on the high-temperature furnace cover (120) is the same as the insulation component in the high-temperature chamber (100), and the furnace cover insulation layer on the low-temperature furnace cover (320) is the same as the insulation component in the low-temperature chamber (300).

8. The silicon oxide production equipment according to any one of claims 1 to 7, characterized in that: The temperature in the high temperature chamber (100) is maintained at 1200°C to 1600°C; the temperature in the transition chamber (200) is maintained at 1200°C to 1600°C; and the temperature in the low temperature chamber (300) is maintained at 700°C to 900°C.

Images