Gas circuit structure of MPCVD chemical vapor deposition equipment

Abstract

The utility model discloses a gas circuit structure of MPCVD chemical vapor deposition equipment, which comprises a base, a fixed disc is arranged on one side of the upper part of the base, a first bolt penetrates through the upper part of the fixed disc, a stand column is fixed on the upper part of the fixed disc, a knob is arranged on one side of the stand column, a telescopic rod is movably arranged in the stand column, and the telescopic rod is movably arranged on the upper part of the base. A pipe frame is fixed to the upper portion of the telescopic rod, an air conveying pipe is installed on one side of the pipe frame, and a connector is installed at one end of the air conveying pipe; according to the gas path structure of the MPCVD chemical vapor deposition equipment, through cooperative use of the connector, the filter pipe, the filter element, the hose and the gas pump, gas can be fed into the filter pipe by turning on a switch of the gas pump, the gas is filtered by the filter element in the filter pipe, the filter element is made of an activated carbon material, harmful substances in the gas can be adsorbed, and therefore the gas path structure is convenient to use. Therefore, relatively pure gas can be provided, and the MPCVD chemical vapor deposition equipment has relatively high quality during chemical reaction.

Description

Technical Field

[0001] The utility model relates to the technical field related to MPCVD chemical vapor deposition equipment, in particular to a gas path structure of MPCVD chemical vapor deposition equipment. Background Art

[0002] MPCVD chemical vapor deposition equipment is a device specially used to prepare high-quality thin films or coatings. Its working principle is mainly to use microwave power to generate microwave plasma, and deposit the required thin film on the substrate through gas phase chemical reaction. This equipment has the advantages of high purity, good uniformity and low cost. It is widely used in semiconductors, optics, coatings and other fields. The gas path structure of MPCVD chemical vapor deposition equipment mainly involves gas supply, control and flow path.

[0003] However, the existing gas path structure does not filter the gas during the gas supply process, and harmful gases in the gas are doped into the chemical vapor reaction, affecting the reaction quality and efficiency. Therefore, the present application provides a gas path structure of an MPCVD chemical vapor deposition device to meet the needs. Utility Model Content

[0004] The utility model aims to provide a gas path structure of an MPCVD chemical vapor deposition device to solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a gas path structure of an MPCVD chemical vapor deposition device, comprising a base, a fixed plate is installed on one side above the base, a first bolt penetrates through the top of the fixed plate, a column is fixed above the fixed plate, a knob is installed on one side of the column, a telescopic rod is movably installed inside the column, a pipe rack is fixed above the telescopic rod, a gas pipe is installed on one side of the pipe rack, a connector is installed at one end of the gas pipe, a filter tube is installed below the connector, a filter element is installed inside the filter tube, a hose is installed below the filter tube, and an air pump is installed below the hose.

[0006] Preferably, the fixing plate is threadedly connected to the base via first bolts, and the first bolts are distributed in a circumference above the fixing plate.

[0007] Preferably, the pipe rack forms a lifting structure with the column through a telescopic rod, and the diameter of the telescopic rod matches the inner diameter of the column.

[0008] Preferably, a protective sleeve is provided on the outer side of the gas delivery pipe, a clamp is installed on the outer side of the protective sleeve, and second bolts penetrate through both sides of the clamp.

[0009] Preferably, the clamps are threadedly connected via a second bolt, and the protective sleeve is made of rubber-plastic sponge material.

[0010] Preferably, the filter element coincides with the central axis of the filter tube, and the filter element is made of activated carbon.

[0011] Preferably, the air pump is installed on the other side above the base, and the air pump is used in conjunction with a hose.

[0012] Compared with the prior art, the beneficial effects of the utility model are:

[0013] 1. The gas path structure of the MPCVD chemical vapor deposition equipment is used in conjunction with a connector, a filter tube, a filter element, a hose and an air pump. By turning on the switch of the air pump, the gas can be sent into the filter tube. The gas is filtered by the filter element inside the filter tube. The filter element is made of activated carbon and can adsorb harmful substances in the gas, thereby providing relatively pure gas, so that the MPCVD chemical vapor deposition equipment has higher quality when performing chemical reactions;

[0014] 2. The gas path structure of the MPCVD chemical vapor deposition equipment is provided with a column, a knob, a telescopic rod and a pipe rack. Since the heights of the air inlet pipes of the MPCVD chemical vapor deposition equipment are different, the pipe rack needs to be adjusted to a corresponding position to support the air inlet pipe. The height of the pipe rack can be adjusted easily by providing the telescopic rod, and tightening the knob can limit the telescopic rod.

[0015] 3. The gas path structure of the MPCVD chemical vapor deposition equipment is provided with a gas pipe, a protective sleeve, a clamp and a second bolt. The gas pipe is a quartz pipe, which is relatively fragile. By wrapping the protective sleeve on the outside of the gas pipe, the gas pipe can be well protected to prevent the gas pipe from being broken by collision. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0017] Figure 2 This is a structural schematic diagram of the pipe rack of the utility model;

[0018] Figure 3 This is a schematic diagram of the structure of the gas transmission pipe of the utility model;

[0019] Figure 4 It is a schematic diagram of the cross-sectional structure of the filter tube of the utility model.

[0020] In the figure: 1. base; 2. fixing plate; 3. first bolt; 4. column; 5. knob; 6. telescopic rod; 7. pipe rack; 8. gas pipe; 9. protective cover; 10. clamp; 11. second bolt; 12. connector; 13. filter tube; 14. filter element; 15. hose; 16. air pump. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0022] See also Figure 1-2 The utility model provides a technical solution: a gas path structure of an MPCVD chemical vapor deposition device, comprising a base 1, a fixed plate 2 is installed on one side above the base 1, a first bolt 3 is penetrated above the fixed plate 2, the fixed plate 2 is threadedly connected to the base 1 through the first bolt 3, the first bolt 3 is distributed in a circle above the fixed plate 2, the setting of the fixed plate 2 is convenient for the staff to fix the column 4 to prevent the column 4 from shaking during use, a column 4 is fixed above the fixed plate 2, a knob 5 is installed on one side of the column 4, a telescopic rod 6 is movably installed inside the column 4, a pipe rack 7 is fixed above the telescopic rod 6, the pipe rack 7 forms a lifting structure with the column 4 through the telescopic rod 6, the diameter of the telescopic rod 6 is consistent with the inner diameter of the column 4, due to the different heights of the air inlet pipes of the MPCVD chemical vapor deposition equipment, the pipe rack 7 needs to be adjusted to the corresponding position to support the air inlet pipe, and the height of the pipe rack 7 is conveniently adjusted by the setting of the telescopic rod 6;

[0023] See also Figure 1 , Figure 3 and Figure 4A gas pipe 8 is installed on one side of the pipe rack 7, and a protective sleeve 9 is provided on the outer side of the gas pipe 8. A clamp 10 is installed on the outer side of the protective sleeve 9. Second bolts 11 are penetrated on both sides of the clamp 10. By wrapping the protective sleeve 9 on the outer side of the gas pipe 8, the gas pipe 8 can be well protected to prevent the gas pipe 8 from being ruptured by collision. The clamps 10 are threadedly connected by the second bolts 11. The protective sleeve 9 is made of rubber and plastic sponge. The clamp 10 can tightly wrap the protective sleeve 9 on the outer side of the gas pipe 8. A connector 12 is installed at one end of the gas pipe 8, and a filter tube 13 is installed below the connector 12. A filter element 14 is installed inside the filter tube 13. The filter element 14 coincides with the central axis of the filter tube 13, the filter element 14 is made of activated carbon, the gas is filtered by the filter element 14 inside the filter tube 13, the filter element 14 is made of activated carbon and can adsorb harmful substances in the gas, thereby providing relatively pure gas, so that the MPCVD chemical vapor deposition equipment has higher quality when performing chemical reactions, a hose 15 is installed below the filter tube 13, an air pump 16 is installed below the hose 15, the air pump 16 is installed on the other side above the base 1, the air pump 16 is used in conjunction with the hose 15, and the gas can be delivered into the filter tube 13 by turning on the switch of the air pump 16, so as to facilitate filtering.

[0024] Working principle: When using the gas path structure of the MPCVD chemical vapor deposition equipment, first turn on the external power supply, adjust the height of the pipe rack 7 through the telescopic rod 6, so that the pipe rack 7 can support the air inlet pipe of the MPCVD chemical vapor deposition equipment, and turn on the switch of the air pump 16 to send the gas into the filter tube 13. The gas is filtered by the filter element 14 inside the filter tube 13. The filter element 14 is made of activated carbon and can adsorb harmful substances in the gas, thereby providing relatively pure gas, so that the MPCVD chemical vapor deposition equipment has a higher quality when performing chemical reactions. When the device is not in use, the external power supply of the device is cut off. The model of the air pump 16 is QMJ-HL2002. In this way, the use process of the gas path structure of the MPCVD chemical vapor deposition equipment is completed.

[0025] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A gas path structure of an MPCVD chemical vapor deposition device, comprising a base (1), characterized in that: A fixing plate (2) is installed on one side above the base (1), a first bolt (3) passes through the top of the fixing plate (2), a column (4) is fixed on the top of the fixing plate (2), a knob (5) is installed on one side of the column (4), a telescopic rod (6) is movably installed inside the column (4), a pipe rack (7) is fixed above the telescopic rod (6), an air supply pipe (8) is installed on one side of the pipe rack (7), a connector (12) is installed at one end of the air supply pipe (8), a filter tube (13) is installed below the connector (12), a filter element (14) is installed inside the filter tube (13), a hose (15) is installed below the filter tube (13), and an air pump (16) is installed below the hose (15).

2. The gas path structure of the MPCVD chemical vapor deposition equipment according to claim 1, characterized in that: The fixing plate (2) is threadedly connected to the base (1) via first bolts (3), and the first bolts (3) are distributed in a circumferential manner above the fixing plate (2).

3. The gas path structure of the MPCVD chemical vapor deposition equipment according to claim 1, characterized in that: The pipe rack (7) forms a lifting structure with the column (4) through the telescopic rod (6), and the diameter of the telescopic rod (6) matches the inner diameter of the column (4).

4. The gas path structure of the MPCVD chemical vapor deposition equipment according to claim 1, characterized in that: The outer side of the gas delivery pipe (8) is provided with a protective sleeve (9), the outer side of the protective sleeve (9) is installed with a clamp (10), and both sides of the clamp (10) are penetrated by second bolts (11).

5. The gas path structure of the MPCVD chemical vapor deposition equipment according to claim 4, characterized in that: The clamps (10) are threadedly connected via a second bolt (11), and the protective sleeve (9) is made of rubber-plastic sponge material.

6. The gas path structure of the MPCVD chemical vapor deposition equipment according to claim 1, characterized in that: The filter element (14) coincides with the central axis of the filter tube (13), and the filter element (14) is made of activated carbon.

7. The gas path structure of the MPCVD chemical vapor deposition equipment according to claim 1, characterized in that: The air pump (16) is installed on the other side above the base (1), and the air pump (16) is used in conjunction with the hose (15).

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