Epitaxial reaction chamber and growth equipment

Abstract

The utility model relates to the field of semiconductor manufacturing, in particular to an epitaxial reaction chamber and growth equipment, which comprises a reaction chamber, the side wall of the reaction chamber is provided with an air inlet channel and an air outlet channel, the air inlet channel and the air outlet channel are correspondingly arranged on two sides, a base is rotatably arranged in the reaction chamber, and the base is provided with an air inlet and an air outlet. A rotating shaft is fixedly connected to the center of the bottom surface of the base and penetrates out of the bottom surface of the reaction chamber, a heating device is arranged on the top surface of the outer side of the reaction chamber, and a heat reflecting device is arranged on the top surface of the outer side of the reaction chamber. According to the utility model, the heat reflecting device is arranged at the top of the reaction chamber, so that the temperature is more uniform when the substrate is heated.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor manufacturing, and in particular to an epitaxial reaction chamber and growth equipment. Background Art

[0002] Existing thin film deposition devices usually use induction heating or lamp heating. Usually, an electromagnetic coil is set outside the reaction chamber, and the base on which the substrate is placed is made of graphite. If the base is usually heated by eddy current induction to generate heat to heat the substrate, the disadvantage of this method is that the edge temperature of the substrate is high, while the center temperature is low, which will cause thermal deformation and other problems. In response to this problem, the industry has also proposed to heat the substrate by setting heating lamps on both the upper and lower sides of the reaction chamber. Although this can overcome the problem of thermal deformation, the lamp is arranged coaxially with the axis of the base. During the heat release process of the lamp, the problem of low center temperature of the substrate cannot be solved. Utility Model Content

[0003] The utility model aims to provide an epitaxial reaction chamber and growth equipment to solve the above problems and achieve the purpose of uniformly heating the substrate.

[0004] To achieve the above purpose, the utility model provides the following solutions:

[0005] An epitaxial reaction chamber comprises a reaction chamber, wherein an air inlet channel and an air outlet channel are provided on the side wall of the reaction chamber, wherein the air inlet channel and the air outlet channel are provided on both sides respectively, wherein a base is rotatably provided in the reaction chamber, wherein a rotating shaft is fixedly connected to the center of the bottom surface of the base, wherein the rotating shaft passes through the bottom surface of the reaction chamber, wherein a heating device is provided on the outer top surface of the reaction chamber, and wherein a heat reflecting device is provided on the outer top surface of the reaction chamber.

[0006] Preferably, the reaction chamber is a transparent structure.

[0007] Preferably, the heating device comprises a plurality of heating lamp beads, and the plurality of heating lamp beads are respectively connected to the energy supply device.

[0008] Preferably, a plurality of annular arrays of heating lamp beads are arranged on the top surface of the reaction chamber.

[0009] Preferably, the heat reflection device comprises a plurality of reflection covers, and a ring array of the plurality of reflection covers is arranged on the top surface of the reaction chamber.

[0010] Preferably, the reflector is a metal structure.

[0011] Preferably, the heat reflection device includes a reflection tube, the reflection tube has a ring-shaped structure when viewed from above, the reflection tube has a semi-arc-shaped cross-section, the opening of the reflection tube faces the reaction chamber, and the reflection tube is arranged on the top surface of the reaction chamber.

[0012] Preferably, the heat reflection device includes a plurality of reflection tubes, the reflection tubes are arc-shaped in top view, the reflection tubes are semi-arc-shaped in cross section, the openings of the reflection tubes face the reaction chamber, and the reflection tubes are arranged on the top surface of the reaction chamber.

[0013] Preferably, an angle adjustment mechanism is fixedly connected to the top surface of the heat reflection device, and the angle adjustment mechanism is fixedly connected to the top surface of the reaction chamber.

[0014] As another technical solution, the utility model further provides an epitaxial growth device, including an epitaxial reaction chamber, wherein the epitaxial reaction chamber adopts the above-mentioned epitaxial reaction chamber provided by the utility model.

[0015] Compared with the prior art, the utility model has the following advantages and technical effects:

[0016] By arranging a heat reflecting device on the outer side of the top surface of the reaction chamber, the heat emitted by the heating device can be transferred to the inside of the reaction chamber in cooperation with the heating device, so that the heat generated by the heating device is evenly radiated to the upper surface of the base, so that the substrate placed on the top surface of the base is heated more evenly. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor:

[0018] Figure 1 This is a schematic diagram of the structure of the first embodiment of the utility model;

[0019] Figure 2 This is a schematic diagram of the top view of the structure of the first embodiment of the utility model;

[0020] Figure 3 This is a schematic diagram of the structure of the second embodiment of the utility model;

[0021] Figure 4 This is a schematic diagram of the top view of the mounting block in the second embodiment of the utility model;

[0022] Figure 5 This is a top view of the heat reflection device in the third embodiment of the present utility model;

[0023] Figure 6 It is a top view of the heat reflection device in the fourth embodiment of the utility model.

[0024] Among them, 1. reaction chamber; 2. air inlet channel; 3. air outlet channel; 4. base; 5. rotating shaft; 6. heating lamp beads; 7. heat reflection device; 8. mounting block; 9. pull rope; 10. guide wheel; 11. spring; 12. motor. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0026] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0027] Embodiment 1:

[0028] Reference Figure 1-Figure 2 As shown, this embodiment provides an epitaxial reaction chamber, including a reaction chamber 1, a gas inlet channel 2 and a gas outlet channel 3 are opened on the side wall of the reaction chamber 1, the gas inlet channel 2 and the gas outlet channel 3 are arranged on both sides respectively, a base 4 is rotatably provided in the reaction chamber 1, a rotating shaft 5 is fixedly connected to the center of the bottom surface of the base 4, and the rotating shaft 5 passes through the bottom surface of the reaction chamber 1, a heating device is provided on the outer top surface of the reaction chamber 1, and a heat reflecting device 7 is provided on the outer top surface of the reaction chamber 1.

[0029] By arranging a heat reflection device on the outer side of the top surface of the reaction chamber 1, the heat emitted by the heating device can be transferred to the inside of the reaction chamber 1 in cooperation with the heating device, so that the heat generated by the heating device is evenly radiated to the upper surface of the susceptor 4, so that the substrate placed on the top surface of the susceptor 4 is heated more evenly.

[0030] In a further optimized solution, the reaction chamber 1 is a transparent structure. The reaction chamber 1 may adopt a quartz cavity, which can ensure that the heat of the heating device can better penetrate the side wall of the reaction chamber 1, thereby improving the utilization rate of the heat.

[0031] According to a further optimization scheme, the heating device includes a plurality of heating lamp beads 6, and the plurality of heating lamp beads 6 are respectively connected to the energy supply device. The energy supply device is a power source, and the plurality of heating lamp beads 6 are respectively connected to the energy supply device. Through group control, the power or heating time of the heating lamp beads 6 near the center can be adjusted individually, so that the substrate is heated evenly. When one of the heating lamp beads 6 is damaged, it can be replaced individually, which reduces the workload of the maintenance process.

[0032] According to a further optimized solution, a plurality of heating lamp beads 6 are arranged in a circular array on the top surface of the reaction chamber 1 .

[0033] According to a further optimized solution, the heat reflecting device 7 comprises a plurality of reflecting covers, and a circular array of the plurality of reflecting covers is arranged on the top surface of the reaction chamber 1 .

[0034] Further optimizing the solution, the reflector is a metal structure.

[0035] The reflective cover cooperates with the heating lamp beads 6 , and the reflective cover reflects the heat emitted by the heating lamp beads 6 to the top of the reaction chamber 1 to the upper surface of the base 4 , thereby improving the uniformity of the substrate temperature on the upper surface of the base 4 .

[0036] Embodiment 2:

[0037] Reference Figure 3-Figure 4 As shown, the epitaxial reaction chamber of this embodiment is different from that of the first embodiment only in that an angle adjustment mechanism is fixedly connected to the top surface of the heat reflection device 7 , and the angle adjustment mechanism is fixedly connected to the top surface of the reaction chamber 1 .

[0038] The angle adjustment mechanism includes a mounting frame fixedly connected to the top of the side of the reaction chamber 1, a mounting block 8 is fixedly connected to the top surface of the reflector, at least three pull ropes 9 are fixedly connected to the top surface of the mounting block 8, the pull ropes 9 are arranged at equal intervals along the center of the mounting block 8, a spring 11 is sleeved on the outside of the pull rope 9, the spring 11 is located between the top surface of the mounting block 8 and the bottom surface of the mounting frame, a through hole for passing the pull rope 9 is correspondingly opened on the mounting frame, a guide wheel 10 is rotatably connected to the top surface of the mounting block 8, the guide wheel 10 is correspondingly arranged on one side of the through hole, the pull rope 9 passes through the through hole, bypasses the guide wheel 10 and is fixedly connected to a winding wheel, the winding wheel shaft is connected to a motor 12, and the motor 12 is fixedly connected to the top surface of the mounting frame.

[0039] By controlling the rotation of the motor 12, the motor 12 can drive the pull rope 9 to extend and contract. The pull rope 9 cooperates with the spring 11. Under the elastic force and contraction of the spring 11, the angle adjustment of the mounting block 8 can be achieved. The mounting block 8 drives the reflector to achieve the angle adjustment of the reflector, which can make the reflector reflect directionally so as to make the substrate temperature uniform, prevent thermal deformation, and ensure a more uniform coating. The reflection direction of the reflector can be adjusted during the reaction process. Placing the reflector at the center can adjust the heating according to the temperature of the edge of the substrate near the center position, so that the entire substrate is heated more evenly. Placing the reflector at the edge can reflect heat to the outer edge of the substrate, thereby improving the heating effect of the substrate edge.

[0040] Another technical solution provided by the utility model is an epitaxial growth device, which includes an epitaxial reaction chamber. The epitaxial reaction chamber adopts the epitaxial reaction chamber of the above-mentioned solution.

[0041] By adopting the reaction chamber 1 provided in the above-mentioned embodiments of the utility model, the uniformity of the substrate surface temperature during the reaction process can be improved, the heating lamp column 6 can be independently controlled to adjust the temperature in different areas, the epitaxial uniformity can be improved, and when the heating device needs maintenance, the heating lamp column 6 can be replaced separately, which is convenient for maintenance.

[0042] Embodiment three:

[0043] See also Figure 5 The difference between this embodiment and the second embodiment is that, in a further optimized solution, the heat reflecting device 7 includes a reflecting tube, the structure of the reflecting tube in a top view is a ring structure, the cross section of the reflecting tube is a semi-arc structure, the opening of the reflecting tube faces the reaction chamber 1, and the reflecting tube is arranged on the top surface of the reaction chamber 1.

[0044] Embodiment 4:

[0045] See also Figure 6 The difference between this embodiment and the third embodiment is that, in a further optimized solution, the heat reflecting device 7 includes a plurality of reflecting tubes, the reflecting tubes are arc-shaped structures when viewed from above, the reflecting tubes are semi-arc-shaped structures when viewed from above, the openings of the reflecting tubes face the reaction chamber 1, and the reflecting tubes are arranged on the top surface of the reaction chamber 1. The mounting block 8 has an arc-shaped structure corresponding to the reflecting tubes when viewed from above. Three pull ropes 9 and springs are a group and are arranged on the mounting block 8.

[0046] The embodiments described above are only descriptions of the preferred methods of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should fall within the protection scope determined by the claims of the present invention.

Claims

1. An epitaxial reaction chamber, characterized in that: The invention comprises a reaction chamber (1), wherein a side wall of the reaction chamber (1) is provided with an air inlet channel (2) and an air outlet channel (3), wherein the air inlet channel (2) and the air outlet channel (3) are arranged on both sides respectively, wherein a base (4) is rotatably arranged in the reaction chamber (1), wherein a rotating shaft (5) is fixedly connected to the center of the bottom surface of the base (4), wherein the rotating shaft (5) passes through the bottom surface of the reaction chamber (1), wherein a heating device is arranged on the outer top surface of the reaction chamber (1), and wherein a heat reflecting device (7) is arranged on the outer top surface of the reaction chamber (1).

2. The epitaxial reaction chamber according to claim 1, characterized in that: The reaction chamber (1) is a transparent structure.

3. The epitaxial reaction chamber according to claim 1, characterized in that: The heating device comprises a plurality of heating lamp beads (6), and the plurality of heating lamp beads (6) are respectively connected to an energy supply device.

4. The epitaxial reaction chamber according to claim 3, characterized in that: A plurality of heating lamp beads (6) are arranged in a circular array on the top surface of the reaction chamber (1).

5. The epitaxial reaction chamber according to claim 1, characterized in that: The heat reflection device (7) comprises a plurality of reflection covers, and the plurality of reflection covers are arranged in a circular array on the top surface of the reaction chamber (1).

6. The epitaxial reaction chamber according to claim 5, characterized in that: The reflector is a metal structure.

7. The epitaxial reaction chamber according to claim 1, characterized in that: The heat reflection device (7) comprises a reflection tube, the structure of the reflection tube in a plan view is a ring-shaped structure, the cross-section of the reflection tube is a semi-arc-shaped structure, the opening of the reflection tube faces the reaction chamber (1), and the reflection tube is arranged on the top surface of the reaction chamber (1).

8. The epitaxial reaction chamber according to claim 1, characterized in that: The heat reflection device (7) comprises a plurality of reflection tubes, wherein the structure of the reflection tubes in a top view is an arc-shaped structure, the cross-section of the reflection tubes is a semi-arc-shaped structure, the openings of the reflection tubes face the reaction chamber (1), and the reflection tubes are arranged on the top surface of the reaction chamber (1).

9. The epitaxial reaction chamber according to claim 1, characterized in that: The top surface of the heat reflection device (7) is fixedly connected to an angle adjustment mechanism, and the angle adjustment mechanism is fixedly connected to the top surface of the reaction chamber (1).

10. An epitaxial growth device, comprising an epitaxial reaction chamber, characterized in that: The epitaxial reaction chamber adopts the epitaxial reaction chamber described in any one of claims 1-9.

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