Air inlet device and semiconductor process equipment
By designing the air intake device in semiconductor process equipment, including process gas passages, cleaning gas passages and check devices, the problem of dropping SiC polycrystalline impurity particles deposited in the inner wall of the reaction chamber and contamination of cleaning gas is solved, and the semiconductor sheet is realized The stability of quality and the protective effect of the equipment.
Patent Information
- Application Number
- CN202420334161.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-22
- Publication Date
- 2025-01-14
- Estimated Expiration
- 2034-02-22
AI Technical Summary
In the gas phase epitaxial process, SiC polycrystalline impurity particles deposited on the inner wall of the reaction chamber are prone to fall to the substrate, affecting the quality of the semiconductor sheet, and the cleaning gas causes contamination or corrosion to the process gas channels.
An air intake device is designed, including a process gas passage, a cleaning gas passage and a check device. The process gas passage and a cleaning gas passage are connected to the reaction chamber. The check device is used to conduct the process gas and block the countercurrent of the cleaning gas. Prevent pollution and corrosion.
Effectively prevent SiC polycrystalline impurity particles from falling, ensure stable quality of semiconductor sheets, and protect process gas channels from pollution and corrosion, and extend equipment life.
Smart Images
Figure CN222349185U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor process equipment, in particular to an air intake device and semiconductor process equipment. Background Art
[0002] Silicon carbide (SiC) is a Group IV-IV compound material with unique physical and chemical properties and is a promising semiconductor material for high-power and high-temperature electronics.
[0003] The vapor phase epitaxy process is an important means of preparing semiconductor sheets. It is an epitaxial process in which a substance containing epitaxial layer materials flows to a substrate in the form of a vapor phase in a reaction chamber, a chemical reaction occurs on the substrate, and an epitaxial layer with the same crystal orientation as the substrate is grown. During the process of generating semiconductor sheets by the vapor phase epitaxy process, a layer of SiC polycrystalline impurity particles will also be formed on the inner wall of the reaction chamber. However, as the SiC polycrystalline impurity particles accumulate, there is a risk that the SiC polycrystalline impurity particles will fall onto the substrate, thereby affecting the quality of the semiconductor sheet grown on the substrate. Utility Model Content
[0004] The utility model discloses an air intake device and semiconductor process equipment, which solve the problem in the related art that SiC polycrystalline impurity particles deposited on the inner wall of a reaction chamber are easy to fall onto a substrate, thus affecting the quality of semiconductor sheets grown on the substrate.
[0005] In order to solve the above technical problems, the utility model is achieved as follows:
[0006] In a first aspect, the present application discloses an air intake device for semiconductor process equipment, the disclosed air intake device comprising a process gas channel, a cleaning gas channel and a check device, the process gas channel and the cleaning gas channel both being used to communicate with a reaction chamber of the semiconductor process equipment, the check device being arranged in the process gas channel, the check device being used to allow the gas in the process gas channel to pass through the check device along a first direction into the reaction chamber, and being used to block at least part of the gas from passing through the check device along a second direction, wherein the first direction and the second direction are opposite.
[0007] The present application also discloses a semiconductor process equipment, comprising a reaction chamber and the gas intake device described in the first aspect, wherein the process gas channel and the cleaning gas channel are both connected to the reaction chamber of the semiconductor process equipment.
[0008] The technical solution adopted by the utility model can achieve the following technical effects:
[0009] The gas intake device disclosed in the embodiment of the present application is provided with a process gas channel and a cleaning gas channel, so that the process gas channel can pass process gas into the reaction chamber to prepare semiconductor sheets, and the cleaning gas channel can pass cleaning gas into the reaction chamber to clean SiC polycrystalline impurity particles on the inner wall of the reaction chamber, thereby solving the problem in the related art that SiC polycrystalline impurity particles deposited on the inner wall of the reaction chamber are easy to fall onto the substrate and affect the quality of the semiconductor sheets grown on the substrate.
[0010] By arranging a check device in the process gas channel, when the gas in the process gas channel passes through the check device along a first direction into the reaction chamber, the check device has a better conducting effect to ensure the stability of preparing semiconductor sheets; when the gas in the reaction chamber or the gas in the cleaning gas channel passes through the check device along a second direction, the check device has a certain blocking effect, thereby preventing the gas in the reaction chamber or the gas in the cleaning gas channel from passing through the check device too much into the process gas channel and causing pollution or corrosion to the process gas channel, which is beneficial to the protection of the air intake device. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Figure 1 A schematic diagram of the structure of a semiconductor process equipment disclosed in an embodiment of the utility model;
[0012] Figure 2 for Figure 1 Schematic diagram in first person perspective;
[0013] Figure 3 for Figure 2 A partial enlarged schematic diagram of
[0014] Figure 4 It is a structural schematic diagram of the non-return device disclosed in the embodiment of the utility model;
[0015] Figure 5 A cross-sectional view of a non-return device disclosed in an embodiment of the utility model;
[0016] Figure 6 A schematic diagram of a process for cleaning SiC polycrystalline impurity particles on the inner wall of a reaction chamber of a semiconductor process equipment disclosed in an embodiment of the utility model;
[0017] Figure 7 This is a process flow chart of the semiconductor process equipment disclosed in the embodiment of the utility model.
[0018] Description of reference numerals:
[0019] 100-reaction chamber, 110-insulation cavity, 111-semi-annular insulation cover, 112-disc-shaped insulation cover, 120-first heating body, 130-second heating body, 140-carrying device,
[0020] 200-process gas channel,
[0021] 300-cleaning gas channel, 310-first straight section, 320-second straight section, 330-arc transition section, 400-check device, 410-device body, 411-jet hole, 411a-funnel hole section, 411b-straight hole section, 500-transition channel,
[0022] 610-plasma source, 620-intake block,
[0023] 700-Process chamber. DETAILED DESCRIPTION
[0024] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution of the utility model will be clearly and completely described below in combination with the specific embodiments of the utility model and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.
[0025] The technical solutions disclosed in various embodiments of the present utility model are described in detail below in conjunction with the accompanying drawings.
[0026] In the related art, in order to clean the SiC polycrystalline impurity particles on the inner wall of the reaction chamber, a cleaning gas is introduced into the reaction chamber to react with the SiC polycrystalline impurity particles to generate gas for discharge, so as to achieve cleaning of the reaction chamber. However, the inventors have found that when the cleaning gas is used to clean the SiC polycrystalline impurity particles on the inner wall of the reaction chamber, it will also cause pollution or corrosion to the channel for introducing the process gas during the vapor phase epitaxy process, which is not conducive to the maintenance of the process chamber. In order to solve the problem in the related art that the SiC polycrystalline impurity particles deposited on the inner wall of the reaction chamber are easy to fall onto the substrate and affect the quality of the semiconductor sheet grown on the substrate, and to solve the problem that the channel for introducing the process gas is easy to be polluted or corroded when the reaction chamber is cleaned, the embodiment of the present application discloses an air intake device.
[0027] Please refer to Figures 1 to 7 The embodiment of the utility model discloses an air intake device, and the disclosed air intake device is used for semiconductor process equipment. Specifically, the air intake device can be used for equipment for preparing semiconductor sheets by vapor phase epitaxy process, and the disclosed semiconductor process equipment can be a semiconductor process equipment with horizontal air intake.
[0028] The disclosed gas inlet device includes a process gas channel 200 , a cleaning gas channel 300 and a check device 400 . Both the process gas channel 200 and the cleaning gas channel 300 can be used to communicate with a reaction chamber 100 of a semiconductor process equipment.
[0029] The process gas channel 200 can be used to pass process gas for preparing semiconductor wafers, and the cleaning gas channel 300 can be used to pass cleaning gas that reacts with SiC polycrystalline impurity particles on the inner wall of the reaction chamber 100 to generate gaseous compounds. For example, the cleaning gas can be SF6 (sulfur hexafluoride), and the reaction equation of SF6 and SiC polycrystalline impurity particles is: 6SF6+3SiC=3SiF4+2CF4+4SF6+CS2. SF6 gas reacts with SiC at high temperature to generate 4 gaseous compounds, and the generated 4 gaseous compounds can be discharged from the reaction chamber 100 along with the tail gas, thereby achieving cleaning of the reaction chamber 100. The semiconductor process equipment can include an tail gas treatment system to treat the tail gas.
[0030] The check device 400 is disposed in the process gas channel 200. The check device 400 is used to allow the process gas in the process gas channel 200 to pass through the check device 400 along a first direction into the reaction chamber 100, and to block at least part of the gas from passing through the check device 400 along a second direction, wherein the first direction and the second direction are opposite.
[0031] It should be noted that when the process gas in the process gas channel 200 passes through the check device 400 along the first direction, the check device 400 has no blocking effect on the gas, while when the gas passes through the check device 400 along the second direction, the check device 400 has a certain blocking effect on the gas, and can completely or partially block the gas from passing through the check device 400 along the second direction.
[0032] The gas intake device disclosed in the embodiment of the present application is provided with a process gas channel 200 and a cleaning gas channel 300, so that the process gas channel 200 can pass process gas into the reaction chamber 100 to prepare semiconductor sheets, and the cleaning gas channel 300 can pass cleaning gas into the reaction chamber 100 to clean SiC polycrystalline impurity particles on the inner wall of the reaction chamber 100, thereby solving the problem in the related art that SiC polycrystalline impurity particles deposited on the inner wall of the reaction chamber are easy to fall onto the substrate and affect the quality of the semiconductor sheets grown on the substrate.
[0033] By arranging the check device 400 in the process gas channel 200, when the process gas in the process gas channel 200 passes through the check device 400 along the first direction into the reaction chamber 100, the check device 400 has a better conduction effect to ensure the stability of preparing the semiconductor sheet; when the gas in the reaction chamber 100 or the cleaning gas in the cleaning gas channel 300 passes through the check device 400 along the second direction, the check device 400 has a certain blocking effect, thereby preventing the gas in the reaction chamber 100 or the cleaning gas in the cleaning gas channel 300 from passing through the check device 400 too much and entering the process gas channel 200 to cause pollution or corrosion to the process gas channel 200, which is beneficial to the protection of the air intake device.
[0034] Specifically, the check device 400 may include a one-way valve, which opens when gas passes through the one-way valve in a first direction to allow gas to pass through; when gas passes through the one-way valve in a second direction, the one-way valve closes and gas cannot pass through the one-way valve.
[0035] In another embodiment, the check device 400 may include a device body 410, and the device body 410 may be provided with a jet hole 411. The aperture of the first port of the jet hole 411 may be larger than the aperture of the second port of the jet hole 411, that is, the jet hole 411 is funnel-shaped, and the jet hole 411 is connected with the process gas channel 200, and the direction from the first port of the jet hole 411 to the second port of the jet hole 411 is the same as the first direction, and the process gas in the process gas channel 200 can enter the reaction chamber 100 through the first port of the jet hole 411 and the second port of the jet hole 411 in sequence.
[0036] The air intake device disclosed in the embodiment of the present application is configured such that the check device 400 includes a device body 410, and a jet hole 411 is opened in the device body 410, wherein the aperture of the first port of the jet hole 411 is larger than the aperture of the second port of the jet hole 411, and the direction from the first port of the jet hole 411 to the second port of the jet hole 411 is the same as the first direction, so that when the process gas in the process gas channel 200 enters the reaction chamber 100 through the jet hole 411, the larger aperture of the first port of the jet hole 411 facilitates the entry of the gas, and the smaller aperture of the second port of the jet hole 411 can better prevent the gas in the reaction chamber 100 or the cleaning gas in the cleaning gas channel 300 from passing through the check device 400 too much and entering the process gas channel 200, thereby alleviating the pollution or corrosion of the process gas channel 200. Moreover, the structure in which the aperture of the first port of the jet hole 411 is larger than the aperture of the second port of the jet hole 411 is also conducive to the process gas in the process gas channel 200 passing through the non-return device 400 to enter the reaction chamber 100 more evenly.
[0037] Further, the jet hole 411 may include a funnel hole section 411a and a straight hole section 411b, the port at the large end of the funnel hole section 411a may be the first port of the jet hole 411, the port at the small end of the funnel hole section 411a may be connected to the straight hole section 411b, and the port of the straight hole section 411b facing away from the funnel hole section 411a may be the second port of the jet hole 411.
[0038] The air intake device disclosed in the embodiment of the present application sets the jet hole 411 to include a funnel hole section 411a and a straight hole section 411b, so that the funnel hole section 411a can better prevent the gas in the reaction chamber 100 or the cleaning gas in the cleaning gas channel 300 from passing through the non-return device 400 too much and entering the process gas channel 200, and the straight hole section 411b is beneficial to keep the gas in the process gas channel 200 stable, so that the gas in the process gas channel 200 can be more evenly passed into the reaction chamber 100 after passing through the non-return device 400.
[0039] Optionally, the gas inlet device may further include a transition channel 500, and the transition channel 500 may include a first gas inlet port, a second gas inlet port, and a first gas outlet port. The process gas channel 200 may be connected to the first gas inlet port, the cleaning gas channel 300 may be connected to the second gas inlet port, and the first gas outlet port may be used to communicate with the reaction chamber 100.
[0040] The gas intake device disclosed in the embodiment of the present application is provided with a transition channel 500, so that the process gas channel 200 and the cleaning gas channel 300 are connected with the reaction chamber 100 through the transition channel 500, thereby being beneficial to improving the compactness of the structure compared with the structure in which the process gas channel 200 and the cleaning gas channel 300 are connected with the reaction chamber 100 separately.
[0041] In an optional embodiment, both the process gas channel 200 and the cleaning gas channel 300 may be flat structures. Since the flat structure has a gathering effect on the gas, it is beneficial to the stability of the gas when flowing in the process gas channel 200 and the cleaning gas channel 300.
[0042] When preparing semiconductor wafers, the distribution of gas introduced into the reaction chamber 100 through the process gas channel 200 will affect the thickness of the distribution of SiC polycrystalline impurity particles formed on the inner wall of the reaction chamber 100, and the distribution of gas in the reaction chamber 100 is related to the size of the inner side of the process gas channel 200. In order to improve the uniformity of cleaning the SiC polycrystalline impurity particles on the inner wall of the reaction chamber 100, optionally, the width of the inner side of the process gas channel 200 can be equal to the width of the inner side of the cleaning gas channel 300, and the height of the inner side of the process gas channel 200 can be equal to the height of the inner side of the cleaning gas channel 300. In order to facilitate the definition of the width and height of the inner side of the process gas channel 200 and the width and height of the inner side of the cleaning gas channel 300, the through direction of the process gas channel 200 can be the length direction of the process gas channel 200, and the through direction of the cleaning gas channel 300 can be the length direction of the cleaning gas channel 300. That is, the shape and size of the inner wall of the process gas channel 200 are the same as the shape and size of the inner wall of the cleaning gas channel 300 .
[0043] The air intake device disclosed in the embodiment of the present application sets the width of the inner side of the process gas channel 200 to be equal to the width of the inner side of the cleaning gas channel 300, and sets the height of the inner side of the process gas channel 200 to be equal to the height of the inner side of the cleaning gas channel 300, so that the distribution of the cleaning gas in the cleaning gas channel 300 entering the reaction chamber 100 can be relatively consistent with the distribution of the process gas in the process gas channel 200 entering the reaction chamber 100, which is beneficial to improve the uniformity of cleaning the SiC polycrystalline impurity particles on the inner wall of the reaction chamber 100.
[0044] Since the gases introduced into the process gas channel 200 and the cleaning gas channel 300 are different, and the transition channel 500 is located in a different environment from the process gas channel 200 and the cleaning gas channel 300, the pollution and corrosion degree of the process gas channel 200, the cleaning gas channel 300 and the transition channel 500 are different. In order to facilitate the maintenance of the air intake device, the process gas channel 200 and the cleaning gas channel 300 can be optionally detachably connected to the transition channel 500.
[0045] The air intake device disclosed in the embodiment of the present application makes it easy to maintain and replace the process gas channel 200, the cleaning gas channel 300 and the transition channel 500 separately by detachably connecting the process gas channel 200 and the cleaning gas channel 300 to the transition channel 500.
[0046] In order to facilitate maintenance of the non-return device 400 , optionally, the non-return device 400 may be disposed at the connection between the process gas channel 200 and the first gas inlet port.
[0047] The air intake device disclosed in the embodiment of the present application arranges the check device 400 at the connection between the process gas channel 200 and the first air intake port. Since the process gas channel 200 and the first air intake port of the transition channel 500 are detachably connected, it is convenient to maintain the check device 400 when the process gas channel 200 and the transition channel 500 are separated, and it is also convenient to disassemble and install the check device 400.
[0048] In order to make the structure of the air intake device more compact, optionally, one of the process gas channel 200 and the cleaning gas channel 300 can be a straight channel, and the other of the process gas channel 200 and the cleaning gas channel 300 can include a first straight section 310, a second straight section 320 and an arc-shaped transition section 330. The first straight section 310 and the second straight section 320 are connected by the arc-shaped transition section 330, the first straight section 310 is arranged parallel to the straight channel, and the second straight section 320 is connected to the transition channel 500. The arc-shaped transition section 330 is a smooth bending structure, and the inner wall of the arc-shaped transition section 330 is blunted with a sharp edge. The distance between the first straight section 310 and the straight channel can be 30 mm. Of course, the distance between the first straight section 310 and the straight channel can also be other distances. The embodiment of the present application does not specifically limit the distance between the first straight section 310 and the straight channel. The angle between the second straight section 320 and the straight channel may be 45 degrees. Of course, the angle between the second straight section 320 and the straight channel may also be other acute angles, which is not specifically limited in the embodiment of the present application.
[0049] The air intake device disclosed in the embodiment of the present application is configured such that one of the process gas channel 200 and the cleaning gas channel 300 is configured as a straight channel, and the other is configured to include a first straight section 310, a second straight section 320 and an arc-shaped transition section 330, and the first straight section 310 and the second straight section 320 are connected by the arc-shaped transition section 330, the first straight section 310 is arranged in parallel with the straight channel, and the second straight section 320 is connected to the transition channel 500. This structure ensures that when the pipelines of the process gas channel 200 and the cleaning gas channel 300 are long, the process gas channel 200 and the cleaning gas channel 300 will not continue to extend away from the end away from the reaction chamber 100, which is beneficial to the compactness of the air intake device. In addition, the first straight section 310 and the second straight section 320 are connected by the arc-shaped transition section 330, so that the arc-shaped transition section 330 can reduce the energy loss of the gas when passing through the arc-shaped transition section 330.
[0050] In an optional embodiment, the gas inlet device may further include a plasma source 610 and a gas inlet block seat 620, and the plasma source 610 may be connected to the cleaning gas channel 300 through the gas inlet block seat 620. The plasma source 610 may include a cleaning gas source and a gas ionization device, and the cleaning gas in the cleaning gas source may be ionized by the gas ionization device to form plasma, and enter the cleaning gas channel 300 through the channel of the gas inlet block seat 620.
[0051] Of course, the plasma source 610 may also include a cleaning gas source, a process gas source, and a gas ionization device. Both the cleaning gas source and the process gas source may be connected to the gas ionization device, and the gas ionization device may be connected to the cleaning gas channel 300 and the process gas channel 200 respectively through different channels of the gas inlet block 620. The cleaning gas in the cleaning gas source may be ionized by the gas ionization device to form a plasma, and enter the cleaning gas channel 300 through the channel of the corresponding gas inlet block 620. The process gas in the process gas source may be ionized by the gas ionization device to form a plasma, and enter the process gas channel 200 through the channel of the corresponding gas inlet block 620. After the cleaning gas source and the process gas source are ionized by the gas ionization device to form corresponding plasmas, they may be shunted through different channels of the gas inlet block 620, so that the cleaning gas source and the process gas source are ionized by the gas ionization device to form corresponding plasmas and enter the corresponding cleaning gas channel 300 and the process gas channel 200.
[0052] The present application further discloses a semiconductor process equipment, which includes a reaction chamber 100 and the gas inlet device disclosed in the above embodiment, and a process gas channel 200 and a cleaning gas channel 300 are both connected to the reaction chamber 100 .
[0053] The semiconductor process equipment disclosed in the embodiment of the present application can solve the problem in the related art that SiC polycrystalline impurity particles deposited on the inner wall of the reaction chamber are easy to fall onto the substrate and affect the quality of the semiconductor sheet grown on the substrate by setting the air intake device disclosed in the above embodiment, and can prevent the gas in the reaction chamber 100 or the cleaning gas in the cleaning gas channel 300 from excessively passing through the non-return device 400 into the process gas channel 200 and causing pollution or corrosion to the process gas channel 200, which is beneficial to the protection of the air intake device.
[0054] Optionally, the reaction chamber 100 may include an insulating cavity 110, a first heating body 120 and a second heating body 130. The first heating body 120 and the second heating body 130 may be arranged in the insulating cavity 110 at intervals. The second heating body 130 may be provided with a carrying device 140 for carrying semiconductor sheets. The side walls of the insulating cavity 110 may be provided with air inlets and air outlets, respectively. The process gas channel 200 and the cleaning gas channel 300 may be connected to the air inlet, and the air outlet may be connected to the exhaust gas treatment system.
[0055] The semiconductor process equipment disclosed in the embodiment of the present application sets the reaction chamber 100 to include a heat-insulating cavity 110, a first heating body 120 and a second heating body 130, so that the first heating body 120 and the second heating body 130 can heat the semiconductor sheet during the process, and the second heating body 130 can also support the semiconductor sheet. The heat-insulating cavity 110 can reduce the heat exchange between the first heating body 120 and the second heating body 130 and the outside world, so as to maintain the temperature in the reaction chamber, that is, play a role of heat preservation.
[0056] Specifically, the heat-insulating cavity 110 can be a cylindrical cavity formed by connecting two semi-annular heat-insulating covers 111 and two disc-shaped heat-insulating covers 112, wherein the air inlet and the air outlet can be respectively arranged on the two disc-shaped heat-insulating covers 112. Of course, in practical applications, the heat-insulating cavity 110 can also be formed by connecting a plurality of split parts divided in any other manner.
[0057] Specifically, the inner wall of the reaction chamber 100 usually has a layer of SiC coating. It should be noted that the SiC coating on the inner wall of the reaction chamber 100 and the SiC polycrystalline impurity particles deposited on the inner wall of the reaction chamber 100 have different crystal forms. The cleaning gas reacts differently to the SiC coating and the SiC polycrystalline impurity particles, and usually etches the SiC polycrystalline impurity particles faster. By controlling the etching time, the SiC polycrystalline impurity particles can be cleaned while protecting the SiC coating.
[0058] The semiconductor process equipment disclosed in the embodiment of the present application may also include a process chamber 700. The reaction chamber 100, the process gas channel 200, the cleaning gas channel 300 and the non-return device 400 may all be arranged in the process chamber 700 to protect the reaction chamber 100, the process gas channel 200, the cleaning gas channel 300 and the non-return device 400 and other components. The process chamber 700 may also prevent exhaust gas leakage from polluting the environment.
[0059] The embodiment of the present application discloses a specific process for cleaning SiC polycrystalline impurity particles deposited on the inner wall of the reaction chamber 100. The cleaning gas delivered by the cleaning gas source in the plasma source 610 is detected by a pressure gauge and a flow meter to detect the pressure and flow rate of the delivery. After that, the cleaning gas is ionized into plasma by a gas ionization device and enters the corresponding channel of the intake block 620, and is transported to the reaction chamber 100 through the cleaning gas channel 300. The exhaust device of the semiconductor process equipment discharges the gas phase compounds generated by the reaction in the reaction chamber 100 and the excess cleaning gas from the exhaust pipeline, and is processed by the exhaust gas treatment system. After being processed by the exhaust gas treatment system, the treated gas needs to be tested to meet the emission standards. The exhaust gas treatment system can treat the exhaust gas by combustion and water washing. Since the chemical gas in the whole process has harmful properties such as corrosiveness and toxicity, the entire semiconductor process equipment also needs to be closely monitored by a gas detector, especially for the exhaust system.
[0060] The embodiment of the present application discloses a specific process flow of a semiconductor process equipment. First, the semiconductor process equipment performs a process for preparing semiconductor sheets. After the semiconductor sheets are prepared for a preset number of times, a purge gas is blown into a reaction chamber 100 to purge the reaction chamber 100. Then, a process for cleaning SiC polycrystalline impurity particles on the inner wall of the reaction chamber 100 is performed. After the SiC polycrystalline impurity particles on the inner wall of the reaction chamber 100 are cleaned, a purge gas is blown into the reaction chamber 100 to purge the reaction chamber 100.
[0061] The semiconductor process equipment disclosed in the embodiment of the present application can realize in-situ cleaning of the reaction chamber 100 , that is, the reaction chamber 100 can be cleaned without disassembling the reaction chamber 100 , thereby saving manpower and time costs.
[0062] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.
[0063] The embodiments of the utility model are described above in conjunction with the accompanying drawings, but the utility model is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the enlightenment of the utility model, ordinary technicians in this field can also make many forms without departing from the scope of protection of the utility model and the claims, all of which are within the protection of the utility model.
Claims
1. An air intake device for semiconductor process equipment, characterized in that: The gas inlet device comprises a process gas channel (200), a cleaning gas channel (300) and a non-return device (400); the process gas channel (200) and the cleaning gas channel (300) are both used to communicate with the reaction chamber (100) of the semiconductor process equipment; the non-return device (400) is arranged in the process gas channel (200); the non-return device (400) is used to allow the gas in the process gas channel (200) to pass through the non-return device (400) along a first direction to enter the reaction chamber (100), and is used to prevent at least part of the gas from passing through the non-return device (400) along a second direction, wherein the first direction and the second direction are opposite.
2. The air intake device according to claim 1, characterized in that: The non-return device (400) comprises a device body (410), the device body (410) is provided with a jet hole (411), the aperture of the first port of the jet hole (411) is larger than the aperture of the second port of the jet hole (411), the jet hole (411) is connected with the process gas channel (200), and the direction from the first port of the jet hole (411) to the second port of the jet hole (411) is the same as the first direction.
3. The air intake device according to claim 2, characterized in that: The jet hole (411) comprises a funnel hole section (411a) and a straight hole section (411b); the port at the large end of the funnel hole section (411a) is the first port of the jet hole (411); the port at the small end of the funnel hole section (411a) is connected to the straight hole section (411b); and the port of the straight hole section (411b) facing away from the funnel hole section (411a) is the second port of the jet hole (411).
4. The air intake device according to claim 1, characterized in that: The gas inlet device also includes a transition channel (500), the transition channel (500) includes a first gas inlet port, a second gas inlet port and a first gas outlet port, the process gas channel (200) is connected to the first gas inlet port, the cleaning gas channel (300) is connected to the second gas inlet port, and the first gas outlet port is used to communicate with the reaction chamber (100).
5. The air intake device according to claim 4, characterized in that: The process gas channel (200) and the cleaning gas channel (300) are both detachably connected to the transition channel (500).
6. The air intake device according to claim 5, characterized in that: The non-return device (400) is arranged at the connection between the process gas channel (200) and the first gas inlet port.
7. The air intake device according to claim 4, characterized in that: One of the process gas channel (200) and the cleaning gas channel (300) is a straight channel, and the other of the process gas channel (200) and the cleaning gas channel (300) comprises a first straight section (310), a second straight section (320) and an arc-shaped transition section (330), wherein the first straight section (310) and the second straight section (320) are connected via the arc-shaped transition section (330), the first straight section (310) is arranged parallel to the straight channel, and the second straight section (320) is connected to the transition channel (500).
8. The air intake device according to claim 1, characterized in that: The process gas channel (200) and the cleaning gas channel (300) are both flat structures.
9. The air intake device according to claim 8, characterized in that: The width of the inner side of the process gas channel (200) is equal to the width of the inner side of the cleaning gas channel (300), and the height of the inner side of the process gas channel (200) is equal to the height of the inner side of the cleaning gas channel (300).
10. The air intake device according to claim 1, characterized in that: The gas inlet device further comprises a plasma source (610) and a gas inlet block seat (620), and the plasma source (610) is connected to the cleaning gas channel (300) through the gas inlet block seat (620).
11. A semiconductor process equipment, characterized in that: It comprises a reaction chamber (100) and the gas inlet device according to any one of claims 1 to 9, wherein the process gas channel (200) and the cleaning gas channel (300) are both connected to the reaction chamber (100).