Device for taking and placing thermal insulation module of silicon carbide growth furnace

Abstract

The utility model discloses a silicon carbide growing furnace heat preservation module taking and placing device which comprises a base plate. The stand column is vertically fixed on the chassis; the first lifting device is arranged on the stand column; the assembling platform is located on one side of the stand column and driven by the first lifting device; the cross beam is horizontally mounted at the upper end of the stand column; and the second lifting device is mounted on the cross beam, overhangs downwards and is used for lifting the temperature field assembled on the assembly platform. According to the silicon carbide growth furnace heat preservation module taking and placing device, a temperature field can be conveniently taken and placed, and the gravity center of a growth furnace can be effectively lowered.

Description

Technical Field

[0001] The utility model relates to a device for taking and placing a heat preservation module of a silicon carbide growth furnace. Background Art

[0002] With the development and maturity of the first and second generation semiconductors, the industrial application of electrical devices is gradually approaching its limit. Silicon carbide is a typical representative of the third generation semiconductor materials, with advantages such as high chemical stability, high power, and excellent thermal conductivity. These advantages determine that it has broad development prospects in low resistance power and other electrical devices, but its preparation also has higher requirements.

[0003] The insulation module of the silicon carbide growth furnace is a key component to ensure that the temperature in the growth furnace is stable and uniform. With the help of the insulation module, the temperature in the growth furnace is distributed in the expected manner, that is, the temperature distribution in the growth furnace is regular, which is called the growth furnace temperature field in this field. The growth furnace temperature field refers to the temperature distribution at different spatial points in the crystal growth furnace. In a specific furnace, the temperature at different spatial points is determined, but the temperature at different spatial points in the furnace is not the same. This orderly temperature distribution is called a temperature field. In this field, for the convenience of description, the component used to control the temperature field, namely the aforementioned insulation module, is also referred to as a temperature field. In the following text, the insulation module of the silicon carbide growth furnace is referred to as the temperature field.

[0004] Let's look at the basic structure of the temperature field, which usually includes an external bracket, insulation materials and heat exchange channels. The external bracket of the temperature field is usually made of stainless steel, which has good corrosion resistance and stability. The external bracket is equipped with a heat insulation layer (also known as a heat insulation module) to reduce heat loss to the external environment.

[0005] The thermal insulation layer is mainly composed of thermal insulation materials, which are mainly formed by filling the internal cavity formed by the thermal insulation module with predetermined thermal insulation materials. These materials usually have good thermal insulation properties and can effectively prevent heat from being transferred to the outside.

[0006] The temperature field of the silicon carbide growth furnace adopts a "reaction / heat exchange integrated" design, with one side being the reaction channel and the other side being the heat exchange channel. This design is conducive to the uniform distribution and transfer of heat in the furnace, and improves the heat exchange efficiency of the furnace.

[0007] Based on the above description, it can be seen that the temperature field of the silicon carbide growth furnace needs to be pre-assembled and then placed in the silicon carbide growth furnace, because the temperature field can effectively reduce heat loss and improve the temperature stability in the furnace. This is crucial for the crystal growth process, because temperature fluctuations may have an adverse effect on the quality and performance of the crystal, which requires that the assembly of the temperature field needs to be relatively strict. The temperature field needs to be assembled before each furnace of silicon carbide preparation to avoid a slight error that leads to unstable product quality or performance.

[0008] At present, the typical methods for preparing silicon carbide mainly include high temperature chemical vapor deposition (HTCVD), physical vapor transport (PVT) and liquid phase epitaxy (LPE). In the embodiment of the utility model, the silicon carbide preparation method corresponding to the temperature field is the PVT method. At present, the PVT method is to take and place the temperature field in the growth furnace as a whole, that is, after assembling the temperature field, it is necessary to open the furnace cover from the bottom and place the temperature field in the growth furnace. It should be known that with the increase in the size of silicon carbide crystals, the height of its growth furnace is also constantly increasing, and the corresponding temperature field is also correspondingly increased. If the temperature field is taken and placed from the bottom of the growth furnace, it is inevitable that enough space needs to be left below the growth furnace to meet the needs of taking and placing the temperature field, which will inevitably lead to the installation position of the growth furnace being adjusted upward. Under this condition, the overall center of gravity of the growth furnace is high. At the same time, taking and placing the temperature field from the bottom needs to consider how to hold the temperature field from the bottom after the temperature field is placed in place, which has higher requirements on the internal structure of the growth furnace. Utility Model Content

[0009] The utility model aims to provide a device for taking and placing a heat preservation module of a silicon carbide growth furnace, which is convenient for taking and placing a temperature field and can effectively lower the center of gravity of the growth furnace.

[0010] In an embodiment of the utility model, a device for taking and placing a heat preservation module of a silicon carbide growth furnace is provided, and its basic structure includes:

[0011] Chassis;

[0012] The column is fixed vertically on the chassis;

[0013] A first lifting device, arranged on the column;

[0014] An assembly platform, located on one side of the column and driven by the first lifting device;

[0015] A crossbeam mounted horizontally on the upper ends of the columns; and

[0016] The second lifting device is installed on the crossbeam and cantilevered downward to lift the temperature field assembled on the assembly platform.

[0017] Optionally, a positioning plate is provided on the assembly platform, and a through hole is opened on the assembly platform corresponding to the center of the positioning plate to provide an assembly space for the lower temperature measuring tube in the temperature field.

[0018] Optionally, the positioning disk is a chuck or has a movable baffle plate distributed around the through hole and adjusted in the radial direction of the through hole;

[0019] Correspondingly, the chuck is a three-jaw chuck or a four-jaw chuck.

[0020] Optionally, the first lifting device is a hydraulic cylinder or a nut-screw mechanism;

[0021] Correspondingly, the assembly platform is fixed on the push rod of the hydraulic cylinder or the lead screw nut of the lead screw mechanism through the slider.

[0022] Optionally, there are two upright posts, and the two ends of the slider are guided on the two upright posts respectively;

[0023] The middle part of the sliding block is driven by the first lifting device.

[0024] Optionally, the second lifting device is a hydraulic cylinder or a nut-screw mechanism.

[0025] Optionally, a translation drive device is provided on the crossbeam;

[0026] Correspondingly, the output component of the translation drive device carries the second lifting device.

[0027] Optionally, the translation drive device has two orthogonal degrees of freedom.

[0028] Optionally, the chassis is a railcar chassis and runs on a given track; or

[0029] The chassis is a crawler chassis or a wheeled chassis.

[0030] Optionally, the second lifting device includes a suspension rod, which is used to extend into the temperature field and suspend the temperature field from the bottom.

[0031] The heat preservation module pick-up and placement device of the silicon carbide growth furnace provided in the embodiment of the utility model is suitable for loading and unloading the temperature field from the top. Specifically, the heat preservation module pick-up and placement device of the silicon carbide growth furnace has a chassis to transport the assembled temperature field to a predetermined position, and a column is provided on the chassis, and a first lifting device is adapted on the column, and the first lifting device is mainly used to control the lifting and lowering of the assembly platform. At the same time, a second lifting device is provided on the crossbeam arranged at the top of the column, and the second lifting device is used for hanging and placing the temperature field. When in use, the chassis is first moved to the assembly position, the temperature field is assembled, and then the temperature field is hung on the second lifting device, the assembly platform is lowered, and the temperature field rises; then the chassis is moved to the upper unloading position, and the temperature field is located directly above the furnace body, the upper furnace cover of the furnace body is opened, and the second lifting device lowers the temperature field until the temperature field is in place in the furnace cavity, and the second lifting device releases the temperature field. Due to the upper loading and unloading method, the position of the growth furnace can be relatively low, and the bottom of the growth furnace only needs to make way for the chassis and the assembly platform. The upper space is usually relatively large, and the space requirements for loading and unloading from the top are easily met. Under this condition, the center of gravity of the growth furnace is relatively low, and the temperature field can be pre-set in the positioning device of the growth furnace, which can support the temperature field from below, reducing the burden of temperature field operation and making it more convenient to take and place the temperature field. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Schematic diagram of the structure of a device for taking and placing a heat preservation module of a silicon carbide growth furnace in one embodiment.

[0033] Figure 2 This is a schematic diagram of the temperature field structure in the silicon carbide growth furnace.

[0034] In the figure: 1. chassis, 2. assembly platform, 3. lower temperature measuring tube, 4. positioning plate, 5. temperature field, 6. suspension rod, 7. lifting arm, 8. crossbeam, 9. column, 10. slide seat, 11. induction coil, 12. crucible, 13. furnace cavity, 14. upper temperature measuring tube. DETAILED DESCRIPTION

[0035] Figure 2 The schematic diagram of the silicon carbide growth furnace is shown in the figure, and a furnace chamber 13 is schematically shown in the figure. The furnace chamber 13 is defined by the furnace body, and the furnace chamber 13 is generally a vacuum chamber to reduce the influence of heat convection and the influence on the purity of the growing material. For heating the crucible 12 shown in the figure, induction heating is generally used, so an induction coil 11 is usually set on the furnace body.

[0036] The crucible 12 is placed in the temperature field 5 to reduce the influence of heat radiation.

[0037] As mentioned above, as the specifications of current silicon carbide crystals are getting larger and larger, the crucible 12 and the like will inevitably become larger and larger, and the size of the growth furnace will also become larger and larger. If the materials are loaded and unloaded from below, the space below the growth furnace should be sufficient to meet the loading and unloading of the temperature field 5, which will inevitably cause the growth furnace to be offset upward by a relatively large distance, thereby making the position of the growth furnace too high, thereby causing many problems.

[0038] In the embodiment of the utility model, a device for taking and placing the heat preservation module of a silicon carbide growth furnace suitable for loading and unloading from above is provided. It should be known that for the growth furnace, the height of the workshop is relatively high, and the space above the growth furnace is very sufficient. Under this condition, the device for taking and placing the heat preservation module of the silicon carbide growth furnace based on the embodiment of the utility model is equivalent to making full use of the space that is not actually useful. In this way, since there is no need to provide the growth furnace with space for loading and unloading from below, the height of the growth furnace itself can be relatively low, and the overall stability is relatively good.

[0039] Furthermore, in an embodiment of the utility model, the silicon carbide growth furnace insulation module placement device includes a chassis 1. There may be several, dozens or even dozens of growth furnaces in a workshop, and the temperature field 5 is often concentrated in a predetermined position. The use of the chassis 1 is conducive to transporting the temperature field 5 to the predetermined position.

[0040] Furthermore, columns 9 are arranged on the chassis 1, and two columns 9 can cooperate with the door lintel to form a gantry to improve the overall structural strength.

[0041] Figure 1 Other figures are not used to illustrate the specific structure of the device for taking and placing the insulation module of the silicon carbide growth furnace, but the basic composition of the gantry, for example, belongs to some well-known structures and will not be described in detail.

[0042] Similarly, for Figure 1 The cross beam 8 shown in the figure can cooperate with other cross beams and longitudinal beams to form a top bracket.

[0043] However, the cross beam 8 is still usable even if it does not constitute a top bracket, because the cross beam itself also has the ability to mount other components.

[0044] Regarding the connection method between the column 9 and the chassis 1, first, a flange can be set at the lower end of the column 9, and an assembly hole is opened on the flange, and corresponding anchor bolts or bolt holes aligned with the assembly hole are provided on the chassis 1, so as to adaptably install.

[0045] The column 9 can also be welded to the chassis 1 .

[0046] The first lifting device is installed on the column 9. This structure can also be understood as the column 9 constituting a component of the first lifting device.

[0047] The lifting object of the first lifting device is the assembly platform 2. The purpose of raising the assembly platform 2 to a certain height is to facilitate the operation of the operator, and then lowering it to the position, for example, directly lowering it to the position supported on the chassis 1 to reduce the overall height. In this way, under the condition of making way for the pillars 9, the chassis 1 can be inserted under the growth furnace with a relatively low installation position.

[0048] Correspondingly, the column 9 is arranged on one side of the chassis 1, which is the rear side of the normal moving direction of the chassis 1. At this time, the chassis 1 and the assembly platform 2 lowered into place can be inserted into the space reserved below the growth furnace.

[0049] Furthermore, as for the crossbeam 8, it is connected from the upper end of the column 9 and cantilevered to the front side of the chassis 1. This structure still makes the overall center of gravity of the silicon carbide growth furnace insulation module picking and placing device fall in the middle of the chassis 1, ensuring the walking stability of the chassis 1 without affecting the loading and unloading of the temperature field 5 with the help of the chassis 1.

[0050] As mentioned above, the lifting object of the first lifting device is the assembly platform 2. When the assembly platform 2 is raised, the temperature field 5 is in a state suitable for workers to operate. However, the growth furnace is generally relatively high, and the assembled temperature field 5 still needs to be further lifted to reach a position higher than the furnace mouth of the growth furnace. Therefore, a second lifting device needs to be configured to lift the assembled temperature field 5 to a predetermined height.

[0051] The second lifting device is installed on the crossbeam 8 and cantilevered downward to place the warm field 5 assembled on the assembly platform 2 into the furnace chamber 13, or to lift the warm field 5 out of the furnace chamber 13 when silicon carbide is taken out of the furnace.

[0052] In order to achieve rapid positioning, a positioning plate 4 is provided on the assembly platform 2, and a through hole is opened on the assembly platform 2 corresponding to the center of the positioning plate 4 to provide an assembly space for the lower temperature measuring tube 3 on the temperature field 5; Figure 1 and 2 As shown, the lower temperature measuring tube 3 is cantilevered downward relative to the temperature field 5, and the assembly platform 2 needs to support the temperature field 5. On the one hand, the through hole is used to allow the lower temperature measuring tube 3 to be cantilevered downward, so that the temperature field 5 can fall directly on the assembly platform 2; on the other hand, the existence of the through hole is also conducive to auxiliary positioning of the temperature field 5 on the assembly platform 4 through the lower temperature measuring tube 3.

[0053] Furthermore, if the hole is conducive to the preliminary positioning of the temperature field 5 on the assembly platform 2, then the positioning plate 4 is conducive to the relatively accurate positioning of the temperature field 5.

[0054] When the temperature field 5 is accurately positioned on the assembly platform 2, for example, the second lifting device can be conveniently hooked with the temperature field 5 or the temperature field 5 can be connected to the second lifting device in other ways.

[0055] Regarding the positioning plate, in the mechanical field there is a tool that can be quickly centered, namely a chuck. This tool that can achieve rapid centering is conducive to quickly positioning and clamping the outer contour of the cylindrical temperature field 5, thereby facilitating the assembly and lifting of the temperature field 5.

[0056] Regarding the selection of chuck, you can choose a three-jaw chuck or a four-jaw chuck.

[0057] The quick qualitative characteristics of the chuck are relatively well adapted to the via hole, that is, the coaxiality adjustment of the temperature field 5 and the via hole can be quickly achieved.

[0058] In some implementations, for example, a movable baffle distributed around the through hole and adjusted radially in the through hole can also be used. The movable baffle can be installed on the assembly platform 2 using, for example, a slide rail. After the movable baffle is adjusted into place, it can be locked on the slide rail using, for example, a butterfly screw.

[0059] The slide rail may be provided with scales to facilitate intuitive determination of the current position of the movable baffle.

[0060] The first lifting device can be a hydraulic cylinder or a screw thread mechanism. The hydraulic cylinder has a large power density and is often used in a large range of heavy-duty equipment. The hydraulic cylinder is relatively stable in driving. The disadvantage is that a hydraulic station needs to be configured.

[0061] The nut-and-screw mechanism is the most common precision mechanism in the mechanical field and has been widely used in various machine tools such as CNC machine tools. The nut-and-screw mechanism often requires auxiliary guidance, for example, it often needs to be adapted to the bed guide rails on the machine tool.

[0062] Correspondingly, if a hydraulic cylinder is used for driving, the assembly platform 2 is mounted on the push rod of the hydraulic cylinder; if a nut-and-screw mechanism is used for driving, the assembly platform 2 is mounted on the screw nut of the nut-and-screw mechanism.

[0063] The component used to connect the first lifting device with the assembly platform 2 is called a slider. Figure 1 The slide 10 shown in the figure can improve the stability of the lifting and lowering of the assembly platform 2 by guiding the slide 10.

[0064] Furthermore, as mentioned above, there may be two upright posts 9, and the two ends of the slider are correspondingly guided on the two upright posts 9, so that the span between the two guide pairs formed is relatively large, which is beneficial to improving the stability of the guidance.

[0065] As for the hydraulic cylinder constituting the first lifting device, it itself has relatively good alignment and stability, but in the preferred embodiment, it can also provide guidance for the sliding block equipped therewith.

[0066] The second lifting device may refer to the first lifting device and adopt a hydraulic cylinder or a screw thread mechanism. Compared with the first lifting device, the second lifting device may not be provided with a guide structure.

[0067] In order to improve adaptability, a translation drive device is provided on the crossbeam 8; accordingly, the output component of the translation drive device carries the second lifting device, which is used to adjust the position of the second lifting device in the horizontal plane according to the on-site conditions.

[0068] Furthermore, the translation drive device has two orthogonal degrees of freedom.

[0069] Translational drive is the most common driving method in the mechanical field. From the perspective of adjustment, it is easy to achieve precise adjustment of the position of the second lifting device under the condition that a nut-and-screw mechanism is used as the basic driving mechanism.

[0070] In addition, in a preferred embodiment, the chassis 1 adopts a rail car chassis and runs on a given track to ensure that its running trajectory is controllable, thereby facilitating rapid positioning before loading and unloading.

[0071] As an alternative, the chassis 1 can be a tracked chassis or a wheeled chassis.

[0072] exist Figure 1In the illustrated structure, since the main body of the temperature field 5 is a cylindrical component, if the temperature field 5 is hung from the upper end, the overall height of the column 9 will be too high. In view of this, the second lifting device includes a suspension rod 6, which is used to cantilever into the temperature field 5 and hang the temperature field 5 from the bottom, so that the overall height of the column 9 can be effectively reduced.

Claims

1. A device for taking and placing heat preservation modules of a silicon carbide growth furnace, characterized in that: include: Chassis; The column is fixed vertically on the chassis; A first lifting device, arranged on the column; An assembly platform, located on one side of the column and driven by the first lifting device; The crossbeam is installed horizontally on the upper end of the column; as well as The second lifting device is installed on the crossbeam and cantilevered downward to lift the temperature field assembled on the assembly platform.

2. The device for taking and placing the heat preservation module of the silicon carbide growth furnace according to claim 1, characterized in that: A positioning plate is arranged on the assembly platform, and a through hole is opened on the assembly platform corresponding to the center of the positioning plate to provide an assembly space for the lower temperature measuring tube on the temperature field.

3. The device for taking and placing the heat preservation module of the silicon carbide growth furnace according to claim 2, characterized in that: The positioning disk is a chuck or has a movable baffle plate distributed around the through hole and adjusted in the radial direction of the through hole; Correspondingly, the chuck is a three-jaw chuck or a four-jaw chuck.

4. The device for taking and placing heat preservation modules of a silicon carbide growth furnace according to claim 1, characterized in that: The first lifting device is a hydraulic cylinder or a nut-screw mechanism; Correspondingly, the assembly platform is fixed on the push rod of the hydraulic cylinder or the lead screw nut of the lead screw mechanism through the slider.

5. The device for taking and placing the heat preservation module of the silicon carbide growth furnace according to claim 4, characterized in that: There are two columns, and the two ends of the slider are guided on the two columns accordingly; The middle part of the sliding block is driven by the first lifting device.

6. The device for taking and placing the heat preservation module of the silicon carbide growth furnace according to claim 1, characterized in that: The second lifting device is a hydraulic cylinder or a nut and screw mechanism.

7. The device for taking and placing the heat preservation module of the silicon carbide growth furnace according to claim 1, characterized in that: The crossbeam is provided with a translation driving device; Correspondingly, the output component of the translation drive device carries the second lifting device.

8. The device for taking and placing the heat preservation module of the silicon carbide growth furnace according to claim 7, characterized in that: The translation drive has two orthogonal degrees of freedom.

9. The device for taking and placing heat preservation modules of a silicon carbide growth furnace according to claim 1, characterized in that: The chassis is a railcar chassis and runs on a given track; or The chassis is a crawler chassis or a wheeled chassis.

10. The device for taking and placing heat preservation modules of a silicon carbide growth furnace according to claim 1, characterized in that: The second lifting device includes a suspension rod, which is used to extend into the temperature field and suspend the temperature field from the bottom.

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