Supporting structure suitable for high-overload monocrystalline silicon pressure chip

Abstract

The utility model relates to a supporting structure suitable for a high-overload monocrystalline silicon pressure chip, which comprises a bearing substrate, an induction layer is erected on the bearing substrate, the bearing substrate comprises a substrate body, a deformation bearing mechanism is arranged on the substrate body, and a stress release hole communicated with the substrate body is arranged in the deformation bearing mechanism. Therefore, the sensing layer in the deformation limit can be effectively borne through the stress release holes, the sensing layer is prevented from being broken due to stress, and the pressure chip installed on the sensing layer can be protected. And the stress release holes are formed, so that pressure transmission and dissipation are facilitated, and the stability of the bearing base is not affected.

Description

Technical Field

[0001] The utility model relates to a supporting structure, in particular to a supporting structure suitable for a high overload single crystal silicon pressure chip. Background Art

[0002] Existing pressure sensors are often equipped with single-crystal silicon pressure chips. During use, the single-crystal silicon pressure chip is equipped with a carrier plate. When pressure is sensed, the single-crystal silicon pressure chip deforms downward along with the carrier plate. If the pressure is too large, it will exceed the load range of the carrier plate and cause the carrier plate to break. At the same time, the single-crystal silicon pressure chip will be damaged and scrapped.

[0003] The current preventive measures are to increase the thickness of the carrier board and use materials with good pressure resistance. However, this will reduce the pressure sensitivity of the single crystal silicon pressure chip, reduce the scope of use, and increase the cost of use.

[0004] In view of the above-mentioned defects, the designers have actively carried out research and innovation in order to create a support structure suitable for high overload single crystal silicon pressure chips, making them more valuable for industrial use. Utility Model Content

[0005] In order to solve the above technical problems, the purpose of the utility model is to provide a support structure suitable for a high overload single crystal silicon pressure chip.

[0006] The utility model is suitable for a support structure of a high overload single crystal silicon pressure chip, including a carrying base, wherein: a sensing layer is mounted on the carrying base, the carrying base includes a base body, a deformation bearing mechanism is arranged on the base body, and a stress release hole which is conductive to the base body is arranged in the deformation bearing mechanism.

[0007] Furthermore, the above-mentioned support structure suitable for high overload single crystal silicon pressure chip, wherein the deformation bearing mechanism is a cylindrical boss, the top of the cylindrical boss is provided with a concave arc surface 5, and the edge of the concave arc surface 5 is in contact with the sensing layer.

[0008] Furthermore, in the above-mentioned support structure suitable for a high overload single crystal silicon pressure chip, the edge of the concave arc surface 5 is provided with an arc chamfer.

[0009] Furthermore, in the above-mentioned support structure suitable for a high overload single crystal silicon pressure chip, a yielding sensing cavity is arranged below the sensing layer, a deformation slope is arranged on the edge of the yielding sensing cavity, and the inclination angle of the deformation slope is 5 to 15 degrees.

[0010] Furthermore, the above-mentioned support structure suitable for high overload single crystal silicon pressure chip, wherein the inclination angle is 10 degrees.

[0011] Furthermore, in the above-mentioned support structure suitable for a high overload monocrystalline silicon pressure chip, a chip placement groove is provided above the sensing layer, and a plurality of wiring grooves are provided at the edge of the chip placement groove.

[0012] Furthermore, in the above-mentioned support structure suitable for a high overload single crystal silicon pressure chip, the stress release hole is an elliptical hole.

[0013] Furthermore, in the above-mentioned support structure suitable for high overload monocrystalline silicon pressure chip, an adhesive layer is provided on the bonding surface between the carrier substrate and the sensing layer; or, the carrier substrate and the sensing layer are bonded by ultrasonic welding.

[0014] Furthermore, in the above-mentioned support structure suitable for a high overload single crystal silicon pressure chip, a marking layer is provided on the side of the carrier substrate.

[0015] Furthermore, in the above-mentioned support structure suitable for a high overload single crystal silicon pressure chip, the supporting base is provided with a plurality of anti-slip grooves.

[0016] By means of the above scheme, the utility model has at least the following advantages:

[0017] 1. The stress release hole can effectively support the sensing layer at the deformation limit to prevent it from being broken by stress, and can also protect the pressure chip installed on it.

[0018] 2. Stress release holes are provided to facilitate the transmission and dissipation of pressure without affecting the stability of the supporting substrate itself.

[0019] 3. A yield sensing cavity is provided to avoid excessive extrusion of the deformation bearing mechanism when deformation occurs.

[0020] 4. The chip placement groove can ensure the stable placement of the pressure chip.

[0021] 5. The overall structure is simple, easy to manufacture and use, and has good versatility.

[0022] The above description is only an overview of the technical solution of the utility model. In order to more clearly understand the technical means of the utility model and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the utility model in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the overall structure of the support structure of the high overload single crystal silicon pressure chip.

[0024] Figure 2 It is a schematic diagram of the structure of the supporting substrate.

[0025] Figure 3 It is a half-section structural schematic diagram of the utility model.

[0026] The meanings of the reference numerals in the drawings are as follows.

[0027] 1 Carrying substrate 2 Sensing layer

[0028] 3 Deformation bearing mechanism 4 Stress relief hole

[0029] 5 Concave arc surface 5 6 Make way for the induction cavity

[0030] 7 Deformation slope 8 Chip placement slot

[0031] 9 Wireway DETAILED DESCRIPTION

[0032] The following is a further detailed description of the specific implementation of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0033] like Figures 1 to 3 The support structure suitable for a high overload monocrystalline silicon pressure chip includes a carrier substrate 1, which is different in that: a sensing layer 2 is mounted on the carrier substrate 1, which is used to carry the monocrystalline silicon pressure chip and can effectively sense pressure changes. Specifically, the carrier substrate 1 includes a substrate body, and a deformation bearing mechanism 3 is arranged on the substrate body. In this way, when the sensing layer 2 is subjected to a large pressure and abnormal downward pressure deformation occurs, effective bearing support can be provided to prevent the sensing layer 2 or the monocrystalline silicon pressure chip from being directly ruptured due to excessive local pressure. At the same time, considering that the stress during the instantaneous pressure can be effectively conducted and released, a stress release hole 4 that is connected to the substrate body is provided in the deformation bearing mechanism 3. In this way, high pressure can be carried and transmitted outward through the carrier substrate 1, and the moderate deformation of the sensing layer 2 can be met. During the implementation, the stress release hole 4 is an elliptical hole, which meets the uniform transmission of pressure and does not cause stress concentration at a certain point in the side wall of the hole. Of course, stress release holes 4 of other structures can also be used to meet the use needs under different instantaneous high pressures.

[0034] In combination with a preferred embodiment of the utility model, in order to achieve stable support, the deformation bearing mechanism 3 is a cylindrical boss. In this way, appropriate bottom support can be provided for the main pressure-bearing surface of the single-crystal silicon pressure chip. At the same time, a concave arc surface 5 is provided on the top of the cylindrical boss, and the edge of the concave arc surface 5 is in contact with the sensing layer 2. In this way, the sensing layer 2 can achieve a moderate concave deformation when subjected to a large pressure shock, forming a certain amount of clearance space, and when the deformation reaches a threshold, it can be supported by the concave arc surface 5, and the compressive stress can be further transmitted downward, and the single-crystal silicon pressure chip or the sensing layer 2 will not be locally over-pressurized. Furthermore, in order to avoid the presence of sharp structures during sudden pressure and cause reverse compression, a circular arc chamfer is provided on the edge of the concave arc surface 5.

[0035] Furthermore, the utility model is provided with a yielding induction cavity 6 below the induction layer 2. In this way, the deformation bearing mechanism 3 can be properly yielded, so that the edge of its concave arc surface 5 is in contact with the induction layer 2 while leaving a moderate deformation space. At the same time, a deformation slope 7 is provided on the edge of the yielding induction cavity 6, and the inclination angle of the deformation slope 7 is 5 to 15 degrees. In this way, when the induction layer 2 is deformed downward under pressure, the deformation slope 7 can better transfer the stress to the bearing substrate 1, and stress accumulation will not occur at the bonding position. In addition, through multiple comparative tests, it is found that an inclination angle of 10 degrees can meet the stress transfer requirements required for sudden large pressure changes during daily use.

[0036] In combination with the actual implementation, a chip placement groove 8 is provided above the sensing layer 2, and a plurality of wiring grooves 9 are provided at the edge of the chip placement groove 8. In this way, the monocrystalline silicon pressure chip can be stably placed, and the model can be replaced as needed, and then the corresponding limiting structure can be used to assist in fixing. At the same time, the wiring groove 9 can be used to realize wiring planning, avoid wire exposure, and will not cause wire extrusion during installation and use.

[0037] During the implementation, the bonding surface of the carrier substrate 1 and the sensing layer 2 is provided with an adhesive layer; or, the carrier substrate 1 and the sensing layer 2 are bonded by ultrasonic welding. In this way, the carrier substrate 1 and the sensing layer 2 can be stably bonded. Of course, a snap-on structure or a plug-in structure can also be used, as long as the bonding between the two is stable, which will not be described here.

[0038] Furthermore, the utility model can be provided with a marking layer on the side of the carrier substrate 1. In this way, the pressure range adapted by the carrier substrate 1 can be marked, which is convenient for selecting a suitable pressure chip. At the same time, the carrier substrate 1 is provided with a plurality of anti-slip grooves. In this way, for sensors that need to be placed close to the ground during assembly, appropriate pre-positioning can be achieved through the utility model to avoid unnecessary displacement before final fixation.

[0039] The working principle of the utility model is as follows:

[0040] When in the normal pressure range, the sensing layer 2 only produces a slight deformation. When a large pressure occurs, the sensing layer 2 sinks and deforms. At the same time, the deformation bearing mechanism 3 supports the sensing layer 2 to prevent it from being broken due to excessive deformation, and also prevents the pressure chip placed on it from being damaged by a large deformation. During this period, the stress is transferred to other components of the pressure sensor by the stress release hole 4, and no accumulation occurs. After the pressure returns to normal, the sensing layer 2 automatically resets.

[0041] It can be seen from the above text description and the accompanying drawings that the following advantages are achieved after adopting the utility model:

[0042] 1. The stress release hole can effectively support the sensing layer at the deformation limit to prevent it from being broken by stress, and can also protect the pressure chip installed on it.

[0043] 2. Stress release holes are provided to facilitate the transmission and dissipation of pressure without affecting the stability of the supporting substrate itself.

[0044] 3. A yield sensing cavity is provided to avoid excessive extrusion of the deformation bearing mechanism when deformation occurs.

[0045] 4. The chip placement groove can ensure the stable placement of the pressure chip.

[0046] 5. The overall structure is simple, easy to manufacture and use, and has good versatility.

[0047] In addition, the indicated orientations or positional relationships described in the present invention are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description. They do not indicate or imply that the device or structure referred to must have a specific orientation or be operated with a specific orientation structure. Therefore, they cannot be understood as a limitation on the present invention.

[0048] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the technical principle of the present invention, and these improvements and modifications should also be regarded as within the protection scope of the present invention.

Claims

1. A support structure suitable for a high overload single crystal silicon pressure chip, comprising a bearing substrate, characterized in that: An induction layer is mounted on the carrier substrate, and the carrier substrate comprises a substrate body. A deformation bearing mechanism is arranged on the substrate body, and a stress release hole which is in conduction with the substrate body is arranged in the deformation bearing mechanism.

2. The support structure for a high overload single crystal silicon pressure chip according to claim 1, characterized in that: The deformation bearing mechanism is a cylindrical boss, the top of the cylindrical boss is provided with a concave arc surface, and the edge of the concave arc surface is in contact with the sensing layer.

3. The support structure for a high overload single crystal silicon pressure chip according to claim 2, characterized in that: The edge of the concave arc surface is provided with an arc chamfer.

4. The support structure for a high overload single crystal silicon pressure chip according to claim 1, characterized in that: A yielding induction cavity is arranged below the induction layer, and a deformation slope is arranged at the edge of the yielding induction cavity, wherein the inclination angle of the deformation slope is 5 to 15 degrees.

5. The support structure for a high overload single crystal silicon pressure chip according to claim 4, characterized in that: The inclination angle is 10 degrees.

6. The support structure for a high overload single crystal silicon pressure chip according to claim 1, characterized in that: A chip placement groove is arranged above the sensing layer, and a plurality of wiring grooves are arranged at the edge of the chip placement groove.

7. The support structure for a high overload single crystal silicon pressure chip according to claim 1, characterized in that: The stress release hole is an elliptical hole.

8. The support structure for a high overload single crystal silicon pressure chip according to claim 1, characterized in that: The bonding surface between the carrier substrate and the sensing layer is provided with an adhesive layer; or, the carrier substrate and the sensing layer are bonded together by ultrasonic welding.

9. The support structure for a high overload single crystal silicon pressure chip according to claim 1, characterized in that: A marking layer is arranged on the side of the carrying substrate.

10. The support structure for a high overload single crystal silicon pressure chip according to claim 1, characterized in that: The bearing base is provided with a plurality of anti-skid grooves.

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